Fluorine-vacancy (FV) complexes have been directly observed in the Si_0.94Ge_0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffusion in the SiGe layer via... (Read more)

In this paper we present a systematic study on the formation of He ion implantation induced nanovoids in Si and how they influence the self-interstitial (Is) supersaturation, thus affecting the diffusion and electrical activation of implanted boron in crystalline silicon. We implanted He ions... (Read more)

We use positron annihilation spectroscopy to study 2 MeV ⁴He⁺-irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a... (Read more)

The local order around Mn atoms in the Mn-implanted Si samples, with ferromagnetic properties, has been investigated by use of x-ray-absorption spectroscopy techniques. Analysis of both extended x-ray-absorption fine structure and x-ray absorption near-edge structure spectra clearly indicates that... (Read more)

Structural and magnetic properties in Mn-implanted, p-type Si were investigated. High resolution structural analysis techniques such as synchrotron x-ray diffraction revealed the formation of MnSi_1.7 nanoparticles already in the as-implanted samples. Depending on the Mn fluence,... (Read more)

The annealing of damage generated by low-energy ion implantation in polycrystalline silicon (poly-Si) and amorphous silicon (a-Si) is compared. The rate of heat release between implantation temperature and 350–500 °C for Si implanted in both materials and for different ions implanted in... (Read more)

We present a detailed study of the comparative thermal evolutions of H- and D-related defects in silicon implanted with 2×10¹⁶ H or D/cm², or coimplanted with 0.25×10¹⁶ He/cm² and 0.7×10¹⁶ H/cm², in both orders.... (Read more)

The role of hydrogen in the exfoliation of Ge is studied using cross-sectional transmission electron microscopy, atomic force microscopy, and multiple-internal transmission mode Fourier-transform infrared absorption spectroscopy and compared with the mechanism in silicon. A qualitative model for the... (Read more)

The migration of monovacancies (V⁰) and self-interstitials (I) has been observed in ion-implanted low-doped float-zone silicon by variable-energy positron annihilation spectroscopy. V⁰ and I were created by the in situ implantation of ~20 keV... (Read more)

The formation of hydrogenlike muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N₂, Ne, Ar, Xe), fused and crystalline quartz, and sapphire. By varying the initial energy of positive muons... (Read more)

In this work the high resolution site selective photoluminescence (PL) using Fourier transform spectrometer and PL excitation spectra near 1.54 µm in Er-implanted 6H-SiC were investigated. Direct evidence for the existence of three different Er³⁺ emitting centers... (Read more)

Defect formation during Pd and Pt germanidation of n-type germanium, using rapid thermal annealing in the range of 300–500 °C, is investigated by deep level transient spectroscopy. Small concentrations of an electron trap at ~E_C−0.385 eV are found,... (Read more)

The authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5 K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 10¹⁷ ... (Read more)

The authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160 keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at... (Read more)

Channeling implantation of Ga into Ge is performed at two very different ion fluxes (10¹² and 10¹⁹ cm^–2 s^–1), at two temperatures (room temperature and 250 °C), and at five different fluences. The fluence dependence of the range profiles... (Read more)

Fluorine (F) passivation in poly-Si/TaN/HfO₂/p-Si gate stacks through gate ion implantation has been studied. It has been found that when the TaN thickness was less than 15 nm, the mobility and subthreshold swing improved significantly in HfO₂ n-channel... (Read more)

High-angle annular dark-field imaging in scanning transmission electron microscopy and x-ray photoelectron spectroscopy were used to investigate thermal SiO₂ layers doped with Hf by ion implantation. Hf was mobile under the focused electron beam in the as-implanted samples. After... (Read more)

The formation of nanovoids upon high-dose hydrogen implantation and subsequent annealing in GaN is investigated by transmission electron microscopy. The epitaxial GaN layers on sapphire were implanted at room temperature with H₂⁺ ions at 100 keV with a dose of... (Read more)

Fe ions of dose 5×10¹⁶ cm^–2 were implanted at 200 keV into a-plane ZnO epitaxial films. The epitaxial quality of the postannealed samples was verified by x-ray diffraction -rocking curves and scans, whereas x-ray absorption spectroscopy identified the... (Read more)

Light-emitting centers in alkali-ion-implanted quartz have been investigated with respect to the solid phase epitaxial growth of the ion irradiation induced amorphous zone. Cathodoluminescence was studied under the conditions of chemical epitaxy in annealing the samples, implanted with... (Read more)

Cathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4H–SiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd³⁺ and Dy³⁺ is observed only after... (Read more)

We implanted ultralow doses (2×10¹¹ cm^–2) of antimony ions (¹²¹Sb) into isotopically enriched silicon (²⁸Si) and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed electron spin... (Read more)

4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al⁺ ions using fluences of 4×10¹⁴, 1×10¹⁵, and 2×10¹⁵ cm⁻² with current density of 2.5 µA cm⁻².... (Read more)

Defect centers generated in crystalline silicon by MeV Si implants have been investigated by a combination of photoluminescence, variable-energy positron annihilation measurements, depth profiling by etching, annealing studies, and the dependence on impurities. The broad 935 meV photoluminescence... (Read more)

Ion irradiation causes damage in semiconductor crystal structures and affects charge carrier dynamics. We have studied the damage production by high-energy (100 keV–10 MeV) H, He, Ne, and Ni ions in GaAs and GaAs₉₀N₁₀ using molecular dynamics computer simulations. We... (Read more)

Deuterated p-type GaN(Mg,²H) films were irradiated at room temperature with 1 MeV protons to create native point defects with a concentration approximately equal to the Mg doping (5×10¹⁹ cm^–3). The samples were then annealed isothermally at a... (Read more)

Damage accumulation in neon-implanted silicon with fluences ranging from 5×10¹⁴ to 5×10¹⁶ Ne cm^–2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling... (Read more)

Micro-Raman spectroscopy and atomic force microscopy investigations have been applied on hydrogen implanted p-type Czochralski silicon samples to investigate the hydrogen related defects and their evolution after subsequent annealing. The thermal evolution of interstitial-hydrogen and... (Read more)

The effect of 2 MeV proton radiation on the introduction of deep levels in GaAs grown on compositionally graded SiGe/Si substrates was investigated using deep level transient spectroscopy (DLTS). Systematic comparisons were made with identical layers grown on both GaAs and Ge substrates to directly... (Read more)

The effects of 2 MeV Si⁺ implantation on silicon-on-insulator layers uniformly doped with B at concentrations 1.0 and 1.8×10²⁰ cm^–3, and the kinetics of damage recovery were investigated by carrier density, mobility measurements, and transmission... (Read more)

To determine if the only source of optical absorption between 5.8 and 5.9 eV is the E center (absorbing at 5.85 eV) two separate suites of type III silica samples were implanted, one with Si and one with O. Several ion energies were used for implantation to produce layers 600 and... (Read more)

Isothermal deep-level transient spectroscopy (DLTS) with a single pulse has been used to study the transformation behavior of hydrogen-related metastable defects labeled EM1 (E_c–0.28 eV) and EM2 (E_c–0.37 eV), which are observed in... (Read more)

In this paper we present structural and electrical investigations on high temperature Fe-implanted InP. The aim of the work is to relate the lattice position of the implanted atoms after annealing treatments (from 300 to 600 °C) with their electrical activation as compensating deep traps and... (Read more)

We report on the lattice location of ion-implanted Ca and Sr in thin films of single-crystalline wurtzite GaN. Using the emission channeling technique the angular distributions of ^– particles emitted by the radioactive isotopes ⁴⁵Ca (t_1/2=163.8 d) and... (Read more)

Hydrogen was implanted into IrO₂ (200 nm)/Pb(Zr,Ti)O₃/Pt thin film capacitors at 26 keV with a flux of 2×10¹⁵ H⁺ ions/cm² and also implanted at 20 keV with a flux of 1×10¹⁵ H⁺ ions/cm² into... (Read more)

In this work, we have studied the changes in the optical properties on crystalline silicon implanted wafers (1×10¹³–1×10¹⁶ P⁺/cm²) using an extensive ellipsometric analysis. The effects of implantation energy (20–180 KeV) and... (Read more)

Sintered samples of monoclinic zirconia (-ZrO₂) have been irradiated at room temperature with 6.0 GeV Pb ions in the electronic slowing down regime. X-ray diffraction (XRD) and micro-Raman spectroscopy measurements showed unambiguously that a transition to the "metastable"... (Read more)

The formation and growth of defects, including nanocavities and extended interstitial-type defects, created by helium implantation in silicon (50 keV, 7.10¹⁵ cm^–2) in the temperature range of 100–550 °C has been investigated by grazing incidence small-angle... (Read more)

Raman measurements have been performed on ZnO bulk materials implanted with 220 keV Mn⁺ ions with various doses from 10¹⁵ to 10¹⁷ cm². The results reveal two modes at about 230 and 523 cm^–1, respectively, which are not observed in... (Read more)

While it is known that F modifies dopant diffusion in crystalline Si, the physical mechanisms behind this process are still unclear. In this work we report experimental studies about the F control of the point defect density in preamorphized Si layers. These studies put the basis for the... (Read more)

The effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile from the scattering data is described. A... (Read more)

ZnO single crystals implanted with O⁺ and B⁺ ions were studied by positron annihilation and Raman scattering measurements. Positron annihilation results show that vacancy clusters are generated by implantation. For the B⁺-implanted sample, the vacancy clusters have a... (Read more)

In He implantation induced cavities highly contaminated with metals (Au, Ni, Pt) we found that, when no three-dimensional structure is observed, the shape of the cavities can be strongly modified depending on the nature of the metal and on its trapped quantity. The equilibrium shape of cavities is... (Read more)

Systematic slow positron implantation spectroscopy (SPIS) and atomic force microscopy studies of various 6H-SiC samples are presented to clarify the role of conductivity type, crystal quality, ion implantation (B⁺,Al⁺, and N⁺), and annealing (1.650 °C) in... (Read more)

In this paper, the formation and evolution of defects induced by ion irradiation with 1 MeV Si⁺ ions in Ni₂Si/4H–SiC Schottky diodes were studied and correlated with the electrical properties of the contacts. The current-voltage characteristics of the contacts... (Read more)

Progressive implantation of hydrogen atoms into graphite is modeled by first-principles density functional theory. The maximum H/C ratio was found at 53%, which is in good agreement with experimental results. The hydrogen trapping energy varies from −0.7 eV at very low concentrations to a... (Read more)

Molecular dynamics simulations of collision cascades were performed in three spinel oxides with varying inversion, namely normal magnesium aluminate, MgAl₂O₄, half-inverse magnesium gallate, MgGa₂O₄, and inverse magnesium indate,... (Read more)

Si p-type (100) samples were coimplanted at room temperature with He⁺ ions at 30 keV with a dose of 1×10¹⁶ ions/cm² and successively with H⁺ ions at 24 keV with a dose of 1×10¹⁶ ions/cm². A series of samples was... (Read more)

We have used molecular dynamics simulation techniques to study the generation of damage in Si within the low-energy deposition regime. We have demonstrated that energy transfers below the displacement threshold can produce a significant amount of damage, usually neglected in traditional radiation... (Read more)

Li is present in hydrothermally grown ZnO at high concentrations and is known to compensate both n- and p-type doping due to its amphoteric nature. However, Li can be manipulated by annealing and ion implantation in ZnO. Fast, 20 ms flash anneals in the 900–1400 °C range... (Read more)

High-quality single crystals of ZnO in the as-grown and N⁺ ion-implanted states have been investigated using a combination of three experimental techniques—namely, positron lifetime/slow positron implantation spectroscopy accompanied by theoretical calculations of the positron... (Read more)

Positron lifetime and Doppler measurements were performed on float-zone-refined and variously doped Czochralski-grown Si. The samples were irradiated by various particles (e^–, p, Kr) with energies between 2 MeV and 245 MeV. Electron or proton irradiation gave rise to... (Read more)

In the case of colossal magnetoresistance in the perovskite manganites, "double exchange" mediated by the itinerant spins is believed to play a key role in the ferromagnetism. In contrast, the conventional "Heisenberg" interaction, i.e., direct (unmediated) interaction between... (Read more)

A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1×10¹⁷/cm³ and 5×10¹⁹/cm³. The samples were thermally treated in an... (Read more)

In this paper, the effects of ion irradiation on Schottky barriers formed on silicon carbide are discussed. After Si-ion irradiation at the near-interface region in Ti/4H-SiC contacts an increase of the Schottky barrier height from 1.05 to 1.21 eV was observed, accompanied by a lowering of the... (Read more)

The transient enhanced diffusion of acceptor impurities severely affects the realization of ultrahigh doping regions in miniaturized Si-based devices. Fluorine codoping has been found to suppress this transient diffusion, but the mechanism underlying this effect is not understood. It has been proposed that fluorine-impurity or fluorine–native-defect interactions may be responsible. Here we clarify this mechanism combining first-principles theoretical studies of fluorine in Si and purposely designed experiments on Si structures containing boron and fluorine. The central interaction mechanism is the preferential binding of fluorine to Si-vacancy dangling bonds and the consequent formation of vacancy-fluorine complexes. The latter effectively act as traps for the excess self-interstitials that would normally cause boron transient enhanced diffusion. Instead, fluorine-boron interactions are marginal and do not play any significant role. Our results are also consistent with other observations such as native-defect trapping and bubble formation. (Read more)

We show direct evidence, obtained by positron annihilation spectroscopy, for the complexing of fluorine with vacancies in silicon. Both float zone and Czochralski silicon wafers were implanted with 30 keV fluorine ions to a fluence of 2×10¹⁴ ions/cm², and studied in the... (Read more)

Epitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1×10¹² cm^–2 creates an estimated initial concentration of... (Read more)

mplanted fluorine is observed to behave unusually in silicon, manifesting apparent uphill diffusion and reducing diffusion and enhancing activation of boron. In order to investigate fluorine behavior, we calculate the energy of fluorine defect structures in the framework of density functional theory. In addition to identifying the ground-state configuration and diffusion migration barrier of a single fluorine atom in silicon, a set of energetically favorable fluorine defect structures were found (F_nV_m). The decoration of vacancies and dangling silicon bonds by fluorine suggests that fluorine accumulates in vacancy-rich regions, which explains the fluorine redistribution behavior reported experimentally. (Read more)

We used electrically detected magnetic resonance to study the microscopic structure of ion-implantation-induced point defects that remained in large-scale Si integrated circuits (Si LSIs). Two types of defects were detected in the source/drain (n⁺-type) region of... (Read more)

Phosphorus ion implantations of 6H-SiC in the mean phosphorus concentration of the implanted layer of 1 × 1018 cm−3 were performed both at multi-fold energy between 9 and 21 MeV and at 340 keV. In the high-energy implantations at room temperature, 400, 800 and 1200 °C and in the 340... (Read more)

The effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12±0.08 eV. After a long annealing time at 700ºC, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range. (Read more)

Spin-lattice relaxation time (T₁) and phase memory time (T_M) of shallow donors in 3C-, 4H- and 6H-SiC have been measured in time domain by using pulsed EPR technique. The temperature dependence of T₁ suggests that the Orbach process should be frozen at relatively high temperatures. Shallow donors in SiC are promising in attaining a sufficiently long phase memory time at temperatures much higher than Si:P. (Read more)

The thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5 MeV protons to a... (Read more)

On annealing a boron implanted Si sample at ~800 °C, boron in the tail of the implanted profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more. After annealing for a sufficiently long time, the enhanced diffusion saturates. The enhanced diffusion is... (Read more)

Molecular dynamics (MD) simulations with a modified Tersoff potential have been used to investigate cascade overlap, damage accumulation, and amorphization processes in 3C-SiC over dose levels comparable to experimental conditions. A large number of 10 keV displacement cascades were randomly... (Read more)

The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined from measurements of Doppler broadening spectra of the annihilation radiation. Vacany–oxygen complexes were introduced by implanting 180-keV oxygen at (2–6)×10¹⁷ ... (Read more)

It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted... (Read more)

Formation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)

Deep centers in n-type 4H–SiC and 6H–SiC irradiated with 8 MeV protons have been investigated by capacitance spectroscopy and electron paramagnetic resonance (EPR). Samples were fabricated by sublimation epitaxy or commercially produced by CREE Inc. Research Triangle Park, NC. It is... (Read more)

Electron paramagnetic resonance has been used to study the influence of thermal treatments on defect evolution in helium-implanted Czochralski single-crystal silicon. It is shown that the thermal treatment induces helium migration and capturing by vacancy clusters that transform into pressurized... (Read more)

Infrared (IR) and electron paramagnetic resonance (EPR) studies of quenching-dependent hydrogen-related double donor (HDD) formed in proton-implanted n-Si and p-Si upon annealing above 300°C were carried out. IR data taken at liquid He and N2 reveal that quenching-dependent IR absorption lines... (Read more)

New (S=1) EPR spectrum (labeled Si-AA17) is observed in irradiated high-purity hydrogen-contained silicon after annealing at ≥200°C. The AA17 defect has D3d symmetry with g=2.0028, g=2.0106; A(29Si)=175.0 MHz, A=89.0 MHz; and D=±33.6 MHz, D=±16.8 MHz. It is paramagnetic in a... (Read more)

Electron paramagnetic resonance spectra of S2 paramagnetic center in Float zone silicon (FZ-Si) and Czochralski silicon (CZ-Si) produced by H+2 ion-implantation and by subsequent annealing have been studied. At room temperature the spectrum exhibits an isotropic line g=2.0066±0.0002, which,... (Read more)

Band-gap states of tungsten in silicon carbide (polytypes 4H, 6H, and 15R) are investigated by deep-level transient spectroscopy (DLTS) and admittance spectroscopy on n-type SiC. Doping with W is done by ion implantation and annealing. To establish a definite chemical identification of band-gap... (Read more)

The microscopic structure and introduction rate of point defects in n-type 6H- and 4H-SiC generated by room-temperature proton implantation have been studied by the electron paramagnetic resonance technique. In order to selectively study the effects of defect introduction in the trace region, 12-MeV... (Read more)

Float-zone and Czochralski-grown silicon crystals have been implanted with protons or deuterons at ?50 K. Electron paramagnetic resonance measurements reveal a new signal in the spectrum of the Czochralski-grown (oxygen-rich) material. This signal is strongly temperature dependent, displaying a... (Read more)

Hydrogen-related metastable defects (M3/M4) in n-GaAs were studied in relation to the EL2 center. We found that the M3/M4 defects were observed only in the crystals containing the EL2 center in the as-grown state after exposure to a hydrogen plasma. The EL3 level, which was tentatively assigned as... (Read more)

Recent deep level transient spectroscopy (DLTS), electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy data on interactions of self-interstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was... (Read more)

Using deep-level transient spectroscopy, we studied defect energy levels and their annealing behavior in nitrogen-doped 6H-SiC epitaxial layers irradiated with 2-MeV electrons and implanted with 300-KeV deuterium or hydrogen at room temperature. Five levels located at E_c-0.34,... (Read more)

Four sets of ESR doublets with splittings of 9, 23, 26 or 44 mT were observed in dry a-SiO2 (Type IV, OH concentrations1017 cm−3) implanted with 29Si+ to a fluence of 6×1016 cm−2 at 160 keV. These doublets were attributed to the hyperfine structures due to a 29Si nucleus of... (Read more)

Intrinsic defect formation in amorphous (a-) SiO2 by ion implantation was examined with emphasis upon electronic excitation effects and chemical reaction effects. 10 MeV proton beam and boron beam irradiated silica platelets to examine electronic excitation effects and chemical reaction effects. In... (Read more)

Electron paramagnetic resonance measurements on float-zone silicon implanted with protons at ?50 K followed by heating to room temperature have revealed two signals S1_a and S1_b belonging to the S1 group of signals. S1_a and S1_b both originate from defects... (Read more)

Concentrations of defects in amorphous SiO₂ created by implantation of 10 MeV protons were examined. The depth profile of Si-Si bonds, E^? centers, or peroxy radicals (PORs) was close to that of electronic energy loss. Interstitial O₂ molecules were identified and... (Read more)

The behavior of self-interstitials in silicon which was irradiated with light ions (protons and -particles) and electrons was explored by monitoring known impurity interstitial centers (C_i, Al_i, (Si-O)_i) with deep level transient spectroscopy (DLTS) and electron... (Read more)

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Electron paramagnetic resonance spectra were measured on SiO2 glasses implanted with Si ions to a fluence of 6 × 1016 cm−2 at an acceleration voltage of 160 kV. Three sets of doublets with different separation were observed in Si29-implanted substrates and were ascribed to primary... (Read more)

Three varieties of E′ centers with a spin state, S = 1/2, and with a G-tensor, Gx Gy 2.0003, Gz 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz. The atomic structure of two of these had an hydrogen ion (proton) in nearby sites and hence... (Read more)

The elastic energy loss between 60 and 300 K was measured in SiB_xH_y at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time... (Read more)

The motion of hydrogen in the B-H complex in silicon has been studied. An applied stress is used to produce a preferential alignment of the B-H complex at temperatures sufficiently high for the H to move within the complex (above ∼60 K). This alignment of the complexes is detected by comparing the... (Read more)

The optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)

Experimental results are presented which identify the following chemical reaction as being responsible for compensation of shallow-acceptor impurities when single-crystal silicon is exposed to monatomic hydrogen: A^-+h⁺+H⁰↔(AH)⁰, where A^-... (Read more)

Electron spin resonance (ESR) experiments have been carried out at cryogenic temperatures (4.2 T 35 K) and room temperatures at 9.0 and 20.9 GHz on the Pb0 and Pb1 (commonly referred to as Pb) spin-active defects residing at the Si/SiO2 interface. The ESR lineshapes were shown to display gaussian... (Read more)

Amorphous SiOx-layers with O < x < 2 have been prepared by evaporation of Si at oxygen pressures of 10−6 … 10−3 mbar. The composition of the samples was determined by proton backscattering. The band gap, derived from optical measurements, increases with rising oxygen... (Read more)

The ESR-induced changes in the dc resistance, /||_ESR, of P-ion-implanted silicon have been observed for the first time. The transfer of absorbed Zeeman energy at liquid-He temperature has been investigated. The /||_ESR signals observed were a narrow line with a g value of... (Read more)

The ESR method was used to study paramagnetic centers generated in silicon single crystals by irradiation with 37-MeV α particles or 9-MeV protons at 273ºK. The experiments were carried out on silicon grown by the floating-zone and Czochralski methods and doped with P³¹, B¹¹, and A²⁷. The existence of Si-P3, Si-P1, Si-P4, Si-P5, Si-S1 (Si-B2), and Si-S2 centers was established in the proton-irradiated samples. The Si-S1 and Si-S2 centers were not found in the α-irradiated silicon. The characteristics of isochronous annealing of the various centers were determined. The distribution of the paramagnetic centers along the trajectories of the incident particles was determined by successive removal of silicon layers from the irradiated side. The rates of introduction of the paramagnetic centers by α particles and protons were estimated.