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- 1. Phys. Rev. B 61, 2657 (2000) , “Divacancy-Tin Complexes in Electron-Irradiated Silicon Studied by EPR”, M. Fanciulli, J. R. Byberg.n- and p-type float-zone silicon containing 1018-cm-3 tin were irradiated with 2 MeV electrons to a dose of 1018 cm-2 and subsequently examined by electron paramagnetic resonance (EPR). The p-type material yields only the well-known Si-G29 signal due to... (Read more)
- 2. Phys. Rev. B 12, 4383 (1975) , “Defects in Irradiated Silicon: EPR of the Tin-Vacancy Pair”, G. D. Watkins.An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S=1. Studies versus wavelength of illumination indicate that it has a donor level at ?Ev+0.35 eV. Analysis of the... (Read more)
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All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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1329 | untagged |
Materials
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Others(101 tags)
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(46 tags)
Details
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Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
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Element(65 tags)
Energy(8 tags)
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Label(303 tags)
Sample(17 tags)
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