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- 1. Appl. Phys. Lett. 89, 241911 (2006) , “Defect and stress characterization of AlN films by Raman spectroscopy”, Vanni Lughi and David R. ClarkeRaman spectroscopy was used to characterize the residual stress and defect density of AlN thin films reactively sputtered on silicon (100). The authors studied the correlation between the shift of the E2 (high) phonon of AlN at 658 cm−1 and the film biaxial stress... (Read more)
- 2. Appl. Phys. Lett. 80, 2278 (2002) , “Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction ”, Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, Kensuke OkonogiWe clarified the generation of process-induced dislocations around a shallow trench isolation (STI) by using convergent-beam electron diffraction. Comparing the resolved shear strain (RSS) of 12 slip systems, we found that at the trench bottom corner the RSS on slip systems (1 1 1)[0 1 1] and... (Read more)
- 3. Appl. Phys. Lett. 79, 4243 (2001) , “Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices”, Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, Shinya Ito, Takeshi Toda, Kiyotaka ImaiThe local lattice strain around the channel in metaloxidesemiconductor (MOS) field-effect transistors of 0.1 µm gate length was measured by using convergent-beam electron diffraction. It was found that the normal strain along the gate-length direction is compressive beneath the... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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