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- 1. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 2. Appl. Phys. Lett. 90, 023112 (2007) , “Electrically tunable defects in metallic single-walled carbon nanotubes”, Ji-Yong ParkA defect whose electron transmission probability can be controlled by electric field is intentionally created on a metallic single-walled carbon nanotube (SWCNT) with a voltage pulse from a tip of an atomic force microscope (AFM). Localized characteristics of the created defect are elucidated with... (Read more)
- 3. Appl. Phys. Lett. 90, 013104 (2007) , “Scanning tunneling microscopy investigations of hydrogen plasma-induced electron scattering centers on single-walled carbon nanotubes”, G. Buchs, P. Ruffieux, P. Gröning, and O. GröningThe authors report on the generation of localized defects on single-walled carbon nanotubes by means of a hydrogen electron cyclotron resonance plasma. The defects have been investigated using scanning tunneling microscopy (STM) and show an apparent topographic height in the STM of 1–3 ... (Read more)
- 4. Phys. Rev. B 75, 075202 (2007) , “Theoretical study of Li and Na as n-type dopants for diamond”, J. P. Goss and P. R. BriddonPhosphorus is the n-type dopant of choice for diamond, but results in a deep donor level and alternatives are being sought. One possibility is the incorporation of interstitial alkali metal impurities such as Li and Na. We present the results of density-functional calculations used to predict... (Read more)
- 5. Phys. Rev. B 75, 033301 (2007) , “Microscopic evidence for evolution of superconductivity by effective carrier doping in boron-doped diamond: 11B-NMR study”, H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, T. Oguchi, and H. KawaradaWe have investigated the superconductivity discovered in boron-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower... (Read more)
- 6. Phys. Rev. Lett. 98, 216103 (2007) , “Influence of Cumulenic Chains on the Vibrational and Electronic Properties of sp-sp2 Amorphous Carbon”, L. Ravagnan, P. Piseri, M. Bruzzi, S. Miglio, G. Bongiorno, A. Baserga, C. S. Casari, A. Li Bassi, C. Lenardi, Y. Yamaguchi, T. Wakabayashi, C. E. Bottani, and P. MilaniWe report the production and characterization of a form of amorphous carbon with sp-sp2 hybridization (atomic fraction of sp hybridized species 20%) where the predominant sp bonding appears to be (=C=C=)n cumulene.... (Read more)
- 7. Phys. Rev. Lett. 98, 135506 (2007) , “Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors”, Yanfa Yan, Jingbo Li, Su-Huai Wei, and M. M. Al-JassimThe asymmetry doping problem has severely hindered the potential applications of many wideband gap (WBG) materials. Here, we propose a possible approach to overcome this long-standing doping asymmetry problem for WBG semiconductors. Our approach is based on the reduction of the ionization energies... (Read more)
- 8. Appl. Phys. Lett. 89, 243101 (2006) , “Random telegraph signals and noise behaviors in carbon nanotube transistors”, Fei Liu, Kang L. Wang, Daihua Zhang, and Chongwu ZhouA random telegraph signal appears at a smaller absolute gate bias for a larger absolute drain-source bias in a carbon nanotube transistor. Its mechanism is attributed to a defect located in the drain side of the Schottky barrier carbon nanotube transistor with Ti/Au as contact material. Furthermore,... (Read more)
- 9. Appl. Phys. Lett. 89, 232111 (2006) , “Electron-beam-induced dissociation of B–D complexes in diamond”, J. Barjon, J. Chevallier, F. Jomard, C. Baron, and A. DeneuvilleThe diffusion of deuterium in boron-doped homoepitaxial diamond films leads to the passivation of boron acceptors via the formation of B–D complexes. In this letter, the stability of B–D pairs is investigated under the stress of a low-energy (10 keV) electron-beam irradiation at low... (Read more)
- 10. Appl. Phys. Lett. 89, 173108 (2006) , “Midgap luminescence centers in single-wall carbon nanotubes created by ultraviolet illumination”, Konstantin Iakoubovskii, Nobutsugu Minami, Yeji Kim, Kanae Miyashita, Said Kazaoui, and Balakrishnan NaliniThe authors report the effect of ultraviolet (UV) illumination on optical properties of single-wall carbon nanotubes (SWCNTs) isolated using various dispersants. It is demonstrated that even weak UV light (~1 mW/cm2) can irreversibly alter the SWCNT structure, thus resulting in the... (Read more)
- 11. Appl. Phys. Lett. 89, 131918 (2006) , “Hydrogen incorporation processes in nanodiamond films studied by isotopic induced modifications of Raman spectra”, Sh. Michaelson, O. Ternyak, A. Hoffman, and Y. LifshitzThe effect of replacing H by D and C-12 by C-13 in the gas species used to grow different types of nanodiamond films on the Raman spectra of these films was studied. The modifications of the Raman spectra were investigated in submicron sized diamond films grown by hot filament chemical vapor... (Read more)
- 12. Appl. Phys. Lett. 89, 122111 (2006) , “Hall electron mobility in diamond”, J. Pernot, C. Tavares, E. Gheeraert, E. Bustarret, M. Katagiri, and S. KoizumiThe low field Hall mobility of electron in diamond was investigated from room temperature to 873 K, both experimentally and theoretically. The acoustic deformation potential for electron scattering is determined by fitting of theoretical calculations to experimental data for high quality {111}... (Read more)
- 13. Appl. Phys. Lett. 88, 091912 (2006) , “Hydrogen-vacancy related defect in chemical vapor deposition homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence”, N. Mizuochi, H. Watanabe, H. Okushi, S. Yamasaki, J. Niitsuma, T. SekiguchiHydrogen-vacancy related defect (H1) in chemical vapor deposition homoepitaxial diamond films has been investigated by electron paramagnetic resonance and cathodoluminescence. It is found that the concentration of H1 significantly decreases as the dilution... (Read more)
- 14. J. Appl. Phys. 100, 124315 (2006) , “Magnetic resonance study of Ni nanoparticles in single-walled carbon nanotube bundles”, A. A. Konchits, F. V. Motsnyi, Yu. N. Petrov, S. P. Kolesnik, V. S. Yefanov, M. L. Terranova, E. Tamburri, S. Orlanducci, V. Sessa, and M. RossiWe present a detailed study of the electron magnetic resonance (EMR) properties of Ni nanoparticles (NPs) placed in the bundles of single-walled carbon nanotubes produced by arc discharge with Ni catalyst. The behavior of EMR signals has been investigated in the 10–300 K temperature range for... (Read more)
- 15. J. Appl. Phys. 99, 104906 (2006) , “An x-ray topographic study of diamond anvils: Correlation between defects and helium diffusion”, Agnès Dewaele, Paul Loubeyre, and Ramesh AndréX-ray topographic images of several dozens of diamonds have been recorded before and after their use as anvils in a diamond anvil high pressure cell. The aim of this study is to better understand and prevent the breakage of diamond anvils when they are used in contact with a helium sample. Indeed,... (Read more)
- 16. Phys. Rev. B 74, 245217 (2006) , “Donor levels for selected n-type dopants in diamond: A computational study of the effect of supercell size”, J. P. Goss, P. R. Briddon, and R. J. EyreComputational techniques are key predictive tools in the drive to engineer semiconductive materials. Diamond, intrinsically a wide band-gap insulator, can be made to semiconduct n-type by doping with phosphorus. However, the relatively deep level at Ec−0.6 eV... (Read more)
- 17. Phys. Rev. B 74, 245216 (2006) , “Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors”, Hideharu MatsuuraThe density (NA) and energy level (EA) of an acceptor in a p-type wide-band-gap semiconductor (e.g., SiC, GaN, and diamond) are determined by a least-squares fit of the charge neutrality equation to the temperature dependence of the hole... (Read more)
- 18. Phys. Rev. B 74, 235434 (2006) , “Transport properties of n-type ultrananocrystalline diamond films”, I. S. Beloborodov, P. Zapol, D. M. Gruen, and L. A. CurtissWe investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conductivity of ultrananocrystalline diamond films by several orders of magnitude. We show that films produced at low... (Read more)
- 19. Phys. Rev. B 74, 161203(R) (2006) , “Room-temperature manipulation and decoherence of a single spin in diamond”, R. Hanson, O. Gywat, and D. D. AwschalomWe report on room-temperature coherent manipulation of the spin of a single nitrogen-vacancy center in diamond and a study of its coherence as a function of magnetic field. We use magnetic resonance to induce Rabi nutations and apply a Hahn spin echo to remove the effect of low-frequency dephasing.... (Read more)
- 20. Phys. Rev. B 74, 140502(R) (2006) , “Lattice parameters and thermal expansion of superconducting boron-doped diamonds”, V. V. Brazhkin, E. A. Ekimov, A. G. Lyapin, S. V. Popova, A. V. Rakhmanina, S. M. Stishov, V. M. Lebedev, Y. Katayama, and K. KatoUsing two different high-pressure techniques, we have prepared boron-doped diamonds with atomic concentration of the dopant ranging from 0.04% to 4% (from 7×1019 to 7×1021 atom/cm3) and studied the lattice constants and thermal expansion of the diamonds... (Read more)
- 21. Phys. Rev. B 74, 104303 (2006) , “Nitrogen-vacancy center in diamond: Model of the electronic structure and associated dynamics”, N. B. Manson, J. P. Harrison, and M. J. SellarsSymmetry considerations are used in presenting a model of the electronic structure and the associated dynamics of the nitrogen-vacancy center in diamond. The model accounts for the occurrence of optically induced spin polarization, for the change of emission level with spin polarization and for new... (Read more)
- 22. Phys. Rev. B 73, 245211 (2006) , “Hydrogen and muonium in diamond: A path-integral molecular dynamics simulation”, Carlos P. Herrero, Rafael Ramírez, and Eduardo R. HernándezIsolated hydrogen, deuterium, and muonium in diamond have been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 100 to 800 K. Interatomic interactions were modeled by a... (Read more)
- 23. Phys. Rev. B 73, 245207 (2006) , “Photoionization measurement of deep defects in single-crystalline CVD diamond using the transient-current technique”, J. Isberg, A. Tajani, and D. J. TwitchenWe have adopted the transient-current technique as a sensitive method to detect small concentrations of charged defects in diamond and to study its photoionization spectrum. It is found that ionized impurity concentrations in the interval 109–1013 cm–3 can... (Read more)
- 24. Phys. Rev. B 73, 115204 (2006) , “Platelets and the 110a0/4 {001} stacking fault in diamond”, J. P. Goss, P. R. Briddon, R. Jones, M. I. HeggieElectron microscopy reveals the presence of {001} platelets in annealed, nitrogen containing diamond. These extended planar defects give rise to a large displacement of the surrounding material, are correlated with luminescence and optical absorption, and are characterized by the B... (Read more)
- 25. Phys. Rev. Lett. 97, 137206 (2006) , “Electron Spin Resonance of Proton-Irradiated Graphite”, Kyu Won Lee and Cheol Eui LeeIn the case of colossal magnetoresistance in the perovskite manganites, "double exchange" mediated by the itinerant spins is believed to play a key role in the ferromagnetism. In contrast, the conventional "Heisenberg" interaction, i.e., direct (unmediated) interaction between... (Read more)
- 26. Phys. Rev. Lett. 97, 087601 (2006) , “Polarization and Readout of Coupled Single Spins in Diamond”, R. Hanson, F. M. Mendoza, R. J. Epstein, and D. D. AwschalomWe study the coupling of a single nitrogen-vacancy center in diamond to a nearby single nitrogen defect at room temperature. The magnetic dipolar coupling leads to a splitting in the electron spin resonance frequency of the nitrogen-vacancy center, allowing readout of the state of a single nitrogen... (Read more)
- 27. Physica B 376-377, 358-361 (2006) , “Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC”, J. Isoya, M. Katagiri, T. Umeda, S. Koizumi, H. Kanda, N. T. Son, A. Henry, A. Gali, E. Janz?nPhosphorus shallow donors having the symmetry lower than Td are studied by pulsed EPR. In diamond:P and 3C–SiC:P, the symmetry is lowered to D2d and the density of the donor wave function on the phosphorus atom exhibits a predominant p-character. In 4H–SiC:P with the site symmetry of... (Read more)
- 28. Appl. Phys. Lett. 87, 222101 (2005) , “Trapping-detrapping defects in single crystal diamond films grown by chemical vapor deposition”, A. Balducci, Marco Marinelli, E. Milani, M. E. Morgada, G. Prestopino, M. Scoccia, A. Tucciarone, and G. Verona-RinatiHigh-quality single-crystal diamond films were homoepitaxially grown by chemical vapor deposition onto low cost high-pressure high-temperature diamond substrates. The transport properties of the obtained samples were studied by photoresponse characterization. Fast ultraviolet (5 ns) laser pulses at... (Read more)
- 29. Phys. Rev. Lett. 92, 135502 (2004) , “Hydrogen Incorporation in Diamond: The Vacancy-Hydrogen Complex”, C. Glover, M. E. Newton, P. M. Martineau, S. Quinn, D. J. TwitchenWe report the identification of the vacancy-hydrogen complex in single crystal diamond synthesized by chemical vapor deposition. The S = 1 defect is observed by electron paramagnetic resonance in the negative charge state. The hydrogen atom is bonded to one of the carbon atoms neighboring the... (Read more)
- 30. Phys. Rev. Lett. 90, 185507 (2003) , “Hydrogen Incorporation in Diamond: The Nitrogen-Vacancy-Hydrogen Complex”, C. Glover, M. E. Newton, P. Martineau, D. J. Twitchen, J. M. BakerWe report the identification of the nitrogen-vacancy-hydrogen complex in a freestanding nitrogen-doped isotopically engineered single crystal diamond synthesized by chemical vapor deposition. The hydrogen atom is located in the vacancy of a nearest-neighbor nitrogen-vacancy defect and appears to be... (Read more)
- 31. Phys. Rev. B 66, 161202(R) (2002) , “Phosphorus and sulphur doping of diamond”, L. G. Wang and Alex ZungerPrevious calculations on n-type doping of diamond by P and S predicted that S has a shallower level and a higher solubility than P. Our first-principles calculations show that the opposite is true: Phosphorus impurity in diamond gives rise to a shallower donor level, and has a higher bulk solid... (Read more)
- 32. Diamond Relat. Mater. 10, 580-584 (2001) , “Phosphorus site after CIRA implantation of type IIa diamond”, N. Casanova, E. Gheeraert, A. Deneuville, C. Uzan-Saguy and R. KalishA set of type IIa diamond crystals was processed by cold implantation and rapid annealing at 1050°C ex situ annealing at 1400°C and investigated by ESR measurement. The ESR spectra of CIRA and post-annealed samples show an isotropic line at g=2.003, a set of anisotropic hyperfine lines,... (Read more)
- 33. Diamond Relat. Mater. 10, 480-484 (2001) , “EPR study of preferential orientation of crystallites in N-doped high quality CVD diamond”, S. Nokhrin, J. Rosa, M. Vanecek, A. G. Badalyan and M. NesladekThe directions of preferential growth of free-standing optical-quality CVD diamond wafers have been investigated with the help of electron paramagnetic resonance (EPR). EPR signals of the well-known P1 centre (substitutional nitrogen) have been used as a probe. A computer simulation of EPR spectra... (Read more)
- 34. Diamond Relat. Mater. 10, 434-438 (2001) , “Interstitial aggregates in diamond”, J. P. Goss, B. J. Coomer, R. Jones, T. D. Shaw, P. R. Briddon and S. ÖbergTheoretical modelling of magnetic resonance signals lead to convincing models for the first three self-interstitial aggregates in diamond. These in turn suggest the manner in which larger more stable aggregates including the platelet, observed in annealed type I diamonds, are formed. (Read more)
- 35. Diamond Relat. Mater. 10, 1681-1683 (2001) , “EPR and optical imaging of the growth-sector dependence of radiation-damage defect production in synthetic diamond”, G. A. Watt, M. E. Newton and J. M. BakerEPR imaging data are presented for the distribution of single substitutional nitrogen (P1) in a synthetic diamond of mixed IIa/Ib character, and compared with the distribution of the di-001-split interstitial (R1) produced during an electron irradiation. Since the defects are localised in different... (Read more)
- 36. J. Phys.: Condens. Matter 13, 8957-8964 (2001) , “Determination of the W8 and AB5 defect levels in the diamond gap”, R. N. Pereira, W. Gehlhoff, N. A. Sobolev, A. J. Neves, D. BimbergElectron paramagnetic resonance (EPR) and photo-EPR investigations on synthetic diamond crystals have allowed an unambiguous determination of nickel-related defect levels in the diamond bandgap. Indirect photoinduced recharging of the nitrogen donor and detection of two... (Read more)
- 37. J. Phys.: Condens. Matter 13, 2053-2060 (2001) , “Possible evidence of a copper-related electron paramagnetic resonance centre in diamond”, J. M. BakerThe EPR centre W36, found in natural type IIb diamond, has been previously attributed to a boron-related point defect, largely on account of its four line hyperfine structure attributed to 11B. The attribution has been re-examined, and no simple boron-related site has been found... (Read more)
- 38. J. Phys.: Condens. Matter 13, 2045-2051 (2001) , “An annealing study of the R1 EPR centre (the neatest-neighbour di-<100>-split self-interstitial) in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. BanholzerResults are reported of both isochronal and isothermal annealing studies of the R1 EPR centre (known to be a pair of parallel nearest-neighbouring 100-split self-interstitials) produced by 2 MeV electron irradiation of synthetic type IIa diamonds of very low defect concentration before... (Read more)
- 39. Phys. Rev. B 64, 041201 (2001) , “Combined optical and microwave approach for performing quantum spin operations on the nitrogen-vacancy center in diamond”, Forrest T. Charnock and T. A. KennedyElectron spin echoes were performed on nitrogen-vacancy (N-V) centers in diamond using optical polarization and detection and 35 GHz microwave control. The experiments demonstrate an approach to quantum information in the solid state. A phase memory time of 3.6??s was measured, and coupling of the... (Read more)
- 40. Phys. Rev. B 63, 195208 (2001) , “Self-interstitial aggregation in diamond”, J. P. Goss, B. J. Coomer, R. Jones, T. D. Shaw, P. R. Briddon, M. Rayson, S. ?bergFirst-principles methods are used to investigate the self-interstitial and its aggregates in diamond. The experimental assignment of the spin-1 R2 EPR center to the single interstitial has been questioned because of the small fine-structure term observed. We calculate the spin-spin interaction... (Read more)
- 41. phys. stat. sol. (a) 186, 215-220 (2001) , “First Principles Study of the Self-Interstitial Defect in Diamond”, J. P. Goss, R. Jones, T. D. Shaw, M. J. Rayson, P. R. BriddonFirst principles techniques have been employed to examine the isolated self-interstitial in diamond. The assignment of the R2 EPR center to the self-interstitial has been questioned because of the small fine structure term. We have calculated the spin-spin interaction tensor, which resolves the... (Read more)
- 42. phys. stat. sol. (a) 186, 199-206 (2001) , “Characterization of Defects in as-Grown CVD Diamond Films and HPHT Diamond Powders by Electron Paramagnetic Resonance”, K. Iakoubovskii, A. StesmansSeveral defect centers, labeled as KUL1-7, have been detected by electron paramagnetic resonance in CVD diamond films and synthetic diamond powders. Their g values were determined relatively to the P1 (NS0) center, for which the value of g = 2.00216(1) with... (Read more)
- 43. phys. stat. sol. (a) 186, 167-176 (2001) , “What We Have Learned about Intrinsic Defects in Silicon: A Help in Understanding Diamond?”, G. D. WatkinsWhat we have established by electron paramagnetic resonance (EPR) studies in silicon concerning the properties of its intrinsic defects (vacancies and interstitials) and their interactions with other defects is reviewed. The lessons learned are compared to what is currently being observed in... (Read more)
- 44. Physica B 308-310, 593 (2001) , “Electrically detected magnetic resonance studies of phosphorus doped diamond ”, T. Graf, M. S. Brandt, C. E. Nebel, M. Stutzmann and S. KoizumiPhosphorus doped n-type epitaxial diamond films have been studied by electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR). At low electric field, the dominant defects influencing the electronic transport are carbon dangling bonds, while at higher fields the anisotropic... (Read more)
- 45. Physica B 302-303, 88-100 (2001) , “Magnetospectroscopy of acceptors in "blue" diamonds”, Hyunjung Kim, A. K. Ramdas, S. Rodriguez, Zdenka Barticevic, M. Grimsditch and T. R. AnthonyNaturally occurring, nitrogen-free, p-type diamond—now known to be boron-doped—as well as man-made diamonds deliberately doped with boron display an electronic Raman transition, Δ′, originating in the 1s(p3/2) : Γ8 ground state of the acceptor and terminating in its... (Read more)
- 46. Chem. Phys. Lett. 322, 273-279 (2000) , “Room-temperature field dependence of the electron spin–lattice relaxation times of paramagnetic P1 and P2 centers in diamond”, Cornelis J. Terblanche and Eduard C. ReynhardtElectron spin–lattice relaxation (SLR) times of P1 and P2 centers have been measured at 300 K at X-band and W-band for one synthetic (type-Ib) and three natural (type-Ia) diamonds using electron paramagnetic resonance spectroscopy. Bi-exponential SLR, with a fast and a slow component, was... (Read more)
- 47. Diamond Relat. Mater. 9, 883-886 (2000) , “Mechanisms of nitrogen aggregation in nickel- and cobalt-containing synthetic diamonds”, V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, D. J. Twitchen, M. E. Newton, B. N. Feigelson and O. P. YuryevaWe present a study of the point defects observed in as-grown and annealed synthetic diamonds using electron paramagnetic resonance (EPR) and infrared spectroscopy. The diamonds were grown by the temperature gradient HPHT method in a split sphere apparatus using Fe–Ni–C or... (Read more)
- 48. Diamond Relat. Mater. 9, 424-427 (2000) , “Experimental and theoretical studies of cobalt defects in diamond”, Karl Johnston, Alison Mainwood, Alan T. Collins, Gordon Davies, Daniel Twitchen, Mark Newton and J. M. BakerDiamonds grown with a cobalt/iron solvent catalyst and annealed at 1800°C were cut and polished along the main symmetry directions. The photoluminescence spectrum showed at least four zero phonon lines. One line at 2.367 eV splits and shifts under uniaxial stress indicating that it originates... (Read more)
- 49. Diamond Relat. Mater. 9, 417-423 (2000) , “Spectroscopy of defects and transition metals in diamond”, A. T. CollinsThis article reviews the optical and electron paramagnetic resonance (EPR) studies that have been carried out on diamonds containing nickel-related or cobalt-related defect centres. It is shown that this work is now at a stage where a real understanding may be reached about the nature of the defects... (Read more)
- 50. Diamond Relat. Mater. 9, 337-340 (2000) , “Structural changes in CVD diamond film by boron and nitrogen doping”, Yoshiyuki Show, Toshikazu Matsukawa, Hirokazu Ito, Mitsuo Iwase and Tomio IzumiThe effect of impurity atoms in the defect structures of a diamond film has been studied by electron spin resonance (ESR). It has been observed that introducing boron atoms into the diamond film during chemical vapor deposition (CVD) reduces paramagnetic defects (Pdia and Pac centers) by decreasing... (Read more)
- 51. Diamond Relat. Mater. 9, 1057-1060 (2000) , “New paramagnetic centers in annealed high-pressure synthetic diamond”, A. J. Neves, R. Pereira, N. A. Sobolev, M. H. Nazaré, W. Gehlhoff, A. Näser and H. KandaWe report three new paramagnetic centers found in high-pressure synthetic diamond with high nitrogen and nickel content and annealed at 1600°C. Analysis of the spectra has shown that two of the centers, labeled AB1 and AB2, are related to systems with effective spin S=1/2 and the other is... (Read more)
- 52. J. Chem. Phys. 113, 744-750 (2000) , “Dynamic nuclear polarization of diamond. III. Paramagnetic electron relaxation times from enhanced 13C nuclear magnetic resonance signals”, Eduard C. Reynhardt and Grant L. HighIt is shown that by varying pulse lengths and delay times in electron spin resonance microwave pulse sequences, designed to enhance 13C nuclear magnetic resonance signals in diamond, and measuring the resulting 13C nuclear magnetic resonance signal, the paramagnetic impurity... (Read more)
- 53. J. Phys.: Condens. Matter 12, 7807-7817 (2000) , “Electron spin resonance characterization of a divacancy-related centre in CVD diamond”, A. Stesmans, B. Nouwen, K. IakoubovskiiThe electron spin resonance characterization of an undocumented paramagnetic centre in chemical vapour deposited diamond is reported. Successful fitting of the powder pattern-like spectrum characterized the originating defect as an S = 1 centre of spectroscopic splitting factor g =... (Read more)
- 54. Phys. Rev. B 62, 8038-8052 (2000) , “Zeeman effect of electronic Raman lines of acceptors in elemental semiconductors: Boron in blue diamond”, H. Kim, Z. Barticevic, A. K. Ramdas, S. Rodriguez, M. Grimsditch, T. R. AnthonyThe Zeeman effect of the electronic Raman transition from 1s(p3/2):?8 to the 1s(p1/2):?7 spin-orbit partner (??) of boron acceptors in diamond is studied with magnetic field B along [001], [111], or [110]. As many as eight Zeeman components of... (Read more)
- 55. Phys. Rev. B 62, 6587-6597 (2000) , “EPR data on the self-interstitial complex O3 in diamond”, D. C. Hunt, D. J. Twitchen, M. E. Newton, J. M. Baker, J. K. Kirui, J. A. van Wyk, T. R. Anthony, W. F. BanholzerA previously unreported defect, which is labeled O3, has been observed in the EPR spectrum of synthetic type-IIa diamonds irradiated at 100 K with 2 MeV electrons. This defect was not observed in identical diamonds whose temperature during electron irradiation was ?300 K. This center has also been... (Read more)
- 56. Phys. Rev. B 62, 16587-16594 (2000) , “ESR and optical evidence for a Ni vacancy center in CVD diamond”, K. Iakoubovskii, A. Stesmans, B. Nouwen, and G. J. AdriaenssensCharacterization of a series of correlated electron-spin resonance (ESR) and photoluminescence (PL) lines in diamond grown by chemical vapor deposition is reported. The series consists of a set of structured PL bands in the range 1.8?2.3 eV, and ESR lines due to an S=1 center with g=2.0039(1) and... (Read more)
- 57. Phys. Rev. B 61, 9-11 (2000) , “Identification of cobalt on a lattice site in diamond”, D. J. Twitchen, J. M. Baker, and M. E. NewtonWe report the finding of an electron-paramagnetic-resonance (EPR) center, labeled O4, which contains cobalt on a site in the diamond lattice. O4 is observed at low temperatures (<30?K) in high temperature and pressure synthetic diamonds grown with a cobalt containing metal-solvent catalyst after... (Read more)
- 58. Phys. Rev. B 61, 3863-3876 (2000) , “Identification of the neutral carbon ?100?-split interstitial in diamond”, D. C. Hunt, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. Banholzer, S. S. VagaraliA systematic study has been made of some of the properties of R2, the most dominant paramagnetic defect produced in type-IIa diamond by electron irradiation. R2 has been produced in high-purity synthetic diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar,... (Read more)
- 59. phys. stat. sol. (a) 181, 83-90 (2000) , “Relative Abundance of Single and Vacancy-Bonded Substitutional Nitrogen in CVD Diamond”, I. I. Vlasov, V. G. Ralchenko, A. V. Khomich, S. V. Nistor, D. Shoemaker, R. A. KhmelnitskiiRelations between the concentrations of neutral (N0) and charged (N+) single-substitutional nitrogen and of nitrogen-vacancy (N-V) complexes in chemical vapour deposited diamond films of 0.2 mm thickness with nitrogen impurity concentration levels of 10 ppm are studied. For... (Read more)
- 60. phys. stat. sol. (a) 181, 5-10 (2000) , “ESR Study of Phosphorus Implanted Type IIa Diamond”, N. Casanova, E. Gheeraert, A. Deneuville, C. Uzan-Saguy, R. KalishCold Implantation and Rapid Annealing (CIRA) at 1050 °C of P in IIa diamond crystal, then further annealing at 1400 °C were performed. EPR signals were obtained in particular (i) around g = 2.003, from “dangling bond” defects whose total concentration increases with the dose and decreases... (Read more)
- 61. phys. stat. sol. (b) 217, 665-684 (2000) , “Paramagnetic Defects”, U. Gerstmann, M. Amkreutz, H. OverhofAb-initio calculations of paramagnetic hyperfine interactions for deep defects in semiconductors provide information about the magnetization density distribution in space. A comparison of theoretical results with corresponding data from magnetic resonance experiments allows to estimate the accuracy... (Read more)
- 62. Diamond Relat. Mater. 8, 2022 (1999) , “Multiple twinning and nitrogen defect center in chemical vapor deposited homoepitaxial diamond”, Chih-Shiue Yan and Yogesh K. VohraHomoepitaxial diamond films were grown on polished {100} faces of single crystal type IIa diamond substrates using microwave plasma assisted chemical vapor deposition system. 14 homoepitaxial diamond films were grown under a variety of substrate temperatures (1000–2000°C), methane... (Read more)
- 63. Diamond Relat. Mater. 8, 1572 (1999) , “Correlation between ND1 optical absorption and the concentration of negative vacancies determined by electron paramagnetic resonance (EPR)”, D. J. Twitchen, D. C. Hunt, V. Smart, M. E. Newton and J. M. BakerElectron paramagnetic resonance (EPR) and optical absorption data on the negative and neutral vacancy in diamond are presented. We determine directly the constant of proportionality between the concentration of V− and the integrated intensity of its zero-phonon line (ND1). Using the standard... (Read more)
- 64. Diamond Relat. Mater. 8, 1569 (1999) , “ESR studies of the negative divacancy in irradiated type-I diamonds”, J. K. Kirui, J. A. van Wyk and M. J. R. HochThe W29 is a defect that forms in all irradiated type-Ib diamonds, and some type-Ia diamonds, in the temperature range in which isolated vacancies are mobile. It anneals out at roughly the same temperatures at which other defects, such as the negative vacancy and the R4 centre, which involve... (Read more)
- 65. Diamond Relat. Mater. 8, 1565 (1999) , “New EPR spectra in diamonds with a high concentration of nitrogen atoms”, V. A. Nadolinny, A. P. Yelisseyev, A. G. Badalyan, J. M. Baker, D. J. Twitchen, M. E. Newton, A. Hofstaetter and B. FeigelsonThe EPR spectrum of a synthetic diamond, containing a high concentration of isolated substitutional nitrogen, NS (the P1 EPR centre), shows in addition to the spectrum of P1 three other features not previously observed in nitrogen containing diamond:1. an ‘allowed’ pair spectrum close... (Read more)
- 66. Diamond Relat. Mater. 8, 1560 (1999) , “Modelling of interstitial-related defects in diamond”, A. MainwoodRadiation damage in diamond is a major experimental research tool and is becoming a technologically important topic. Although the vacancy and its complexes are well understood, the other products, the interstitials, are much less studied. Recent theoretical modelling of defects in diamond has... (Read more)
- 67. Diamond Relat. Mater. 8, 1480 (1999) , “Characteristic defects in CVD diamond: optical and electron paramagnetic resonance study”, M. Nesládek, K. Meykens, K. Haenen, J. Navrátil, C. Quaeyhaegens, L. M. Stals, A. Stesmans, K. Iakoubovskij, G. J Adriaenssens, J. Rosa and M. VanekConstant photocurrent method (CPM), electron paramagnetic resonance (EPR), and infra-red optical absorption (FTIR) techniques are used to study characteristic defects in the gap of free-standing optical-quality CVD diamond. It is shown that the gap density of states (DOS) is very sensitive to... (Read more)
- 68. Diamond Relat. Mater. 8, 1101 (1999) , “Optical spin polarization in the di-<001>-split interstitial (R1) centre in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, W. F. Banholzer, T. R. AnthonyIrradiating diamond with electrons or neutrons produces the electron paramagnetic resonance (EPR) R1 centre which has been shown to be a di-001-split interstitial. We report that on cooling below a certain threshold temperature and illuminating with unpolarized light of energy greater than 1.7(1)... (Read more)
- 69. J. Phys.: Condens. Matter 11, 7357 (1999) , “A study of 13C hyperfine structure in the EPR of nickel-nitrogen-containing centres in diamond and correlation with their optical properties”, V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, M. E. Newton, D. J. Twitchen, S. C. Lawson, O. P. Yuryeva, B. N. FeigelsonElectron paramagnetic resonance (EPR) and optical spectroscopy have been used to determine the structure and electronic state of nickel-nitrogen centres in natural diamonds and in synthetic diamonds enriched in 13C. The latter were grown in an Fe-Ni-C solvent/catalyst system at 1750 K,... (Read more)
- 70. Phys. Rev. B 60, 5417 (1999) , “Magnetic circular dichroism of the 1.404-eV interstitial nickel absorption transition in high-pressure synthetic diamond”, P. W. Mason, F. S. Ham, and G. D. WatkinsA high-resolution magnetic circular dichroism (MCDA) study of the sharp 1.404-eV zero-phonon absorption line associated with interstitial nickel in high-pressure synthetic diamond is reported. A model is presented attributing the absorption to internal transitions within the 3d9... (Read more)
- 71. Phys. Rev. B 60, 5392 (1999) , “EPR spectra of separated pairs of substitutional nitrogen atoms in diamond with a high concentration of nitrogen”, V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, D. J. Twitchen, M. E. Newton, A. Hofstaetter, B. FeigelsonElectron paramagnetic resonance (EPR) measurements are reported in synthetic diamonds grown in an Fe-Ni-C solvent/catalyst system at 1750 K, under stabilizing pressure, by the temperature gradient method. Such diamonds are known to have high concentrations of nitrogen. EPR spectra have been found in... (Read more)
- 72. Phys. Rev. B 59, 12900 (1999) , “Electron-paramagnetic-resonance measurements on the divacancy defect center R4/W6 in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. BanholzerElectron-paramagnetic-resonance (EPR) studies in radiation damaged diamond enriched to 5% 13C have resulted in the identification of the nearest-neighbor divacancy center. It is the isotopic enrichment, and consequent observation of 13C hyperfine lines, that has permitted the... (Read more)
- 73. Phys. Rev. Lett. 83, 3254 (1999) , “Magnetospectroscopy of Acceptors in ?Blue? Diamonds”, H. Kim, A. K. Ramdas, S. Rodriguez, M. Grimsditch, T. R. AnthonyThe Zeeman effect of the Δ′ [1s(p3/2):Γ8→1s(p1/2):Γ7] Raman line of boron acceptors in diamond exhibits the predicted eight components and four transitions within the Γ8 multiplet, discovered under diverse polarization... (Read more)
- 74. phys. stat. sol. (a) 174, 137 (1999) , “Effect of Stress on Optical and ESR Lines in CVD Diamond”, K. Iakoubuvskii, A. Stesmans, G. J. Adriaenssens, R. Provoost, R. E. Silverans, V. RaikoCorrelation between the shape of Raman, photoluminescence (PL) and Electron Spin Resonance (ESR) signals in CVD diamond films was examined for both undoped and nitrogen-doped films. No correlation was observed between the shift of the diamond Raman line and its linewidth, even for the films produced... (Read more)
- 75. phys. stat. sol. (a) 172, 113 (1999) , “On Photocurrent (and EPR) Study of Defect Levels in CVD Diamond”, J. Rosa, M. Van??ek, M. Nesl?dek, L. M. StalsPhotocurrent spectroscopy is used for studying electronic defect states in the gap of optical-quality CVD diamond. The constant photocurrent method (CPM), allowing to measure the optical (photoionization) cross-section of defects, is applied on samples with a different surface treatment. The... (Read more)
- 76. phys. stat. sol. (b) 215, 109 (1999) , “Zeeman Effect of Lyman Transitions: Electronic Raman Spectrum of Boron Acceptors in Diamond”, H. Kim, R. Vogelgesang, A. K. Ramdas, S. Rodriguez, M. Grimsditch, T. R. AnthonySubstitutional boron impurities in diamond exhibit characteristic Lyman transitions, originating in the lower 1s(p3/2): 8 ground state and terminating in its spin-orbit split 1s(p1/2): 7 counterpart. In addition to the Lyman spectrum observed in the... (Read more)
- 77. phys. stat. sol. (b) 210, 13 (1999) , “Neutral Vacancies in Group-IV Semiconductors”, A. Zywietz, J. Furthmüller, F. BechstedtAb initio plane-wave-supercell calculations are performed for the neutral monovacancies in silicon, silicon carbide and diamond using ultrasoft non-normconserving Vanderbilt pseudopotentials. We study the structure, the energetics and the single-particle energy spectrum. The local symmetry, the... (Read more)
- 78. Physica B 273-274, 651 (1999) , “New paramagnetic defects in synthetic diamonds grown using nickel catalyst”, A. J. Neves, R. Pereira, N. A. Sobolev, M. H. Nazaré, W. Gehlhoff, A. Näser and H. KandaWe report four new EPR spectra found in high-pressure synthetic diamonds with high nitrogen content, grown using nickel, and annealed at 1600°C. Analyzing the complex spectra around g≈2 two trigonal and two orthorhombic defects, all with , were identified from the angular dependence and... (Read more)diamond| EPR| AB1 AB2 AB3 AB4 .inp files: diamond/AB1 diamond/AB2 diamond/AB3 diamond/AB4 | last update: Masatoshi Sasaki
- 79. Physica B 273-274, 647 (1999) , “Transition metals in diamond: experimental and theoretical identification of Co–N complexes”, Karl Johnston, Alison Mainwood, Alan T. Collins, Gordon Davies, Daniel Twitchen, J. M. Baker and Mark NewtonDiamonds grown using a cobalt/iron catalyst and annealed at 1800°C were studied using two experimental techniques. A zero-phonon line, observed in photoluminescence at 2.367 eV, showed the splitting under uniaxial stress characteristic of an optical transition at a defect of trigonal symmetry.... (Read more)
- 80. Physica B 273-274, 644 (1999) , “The production and annealing stages of the self-interstitial (R2) defect in diamond”, D. J. Twitchen, D. C. Hunt, C. Wade, M. E. Newton, J. M. Baker, T. R. Anthony and W. F. BanholzerWe report on the production rate of the neutral 0 0 1-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110–350 K with 2 MeV electrons... (Read more)
- 81. Physica B 273-274, 632 (1999) , “Ab initio calculations of hyperfine interactions for vacancy and Ni point defects in diamond”, U. Gerstmann, M. Amkreutz and H. OverhofWe calculate total energies and hyperfine interactions for the VC− ground state and the VC*0 excited state of the vacancy in diamond. The comparison with experimental data shows that the local spin density approximation gives reliable spin densities not only for ground states, but also for... (Read more)
- 82. Physica B 273-274, 624 (1999) , “Jahn–Teller splitting and Zeeman effect of acceptors in diamond”, Hyunjung Kim, S. Rodriguez, M. Grimsditch, T. R. Anthony and A. K. RamdasEmploying the high resolution of a 5+4 tandem Fabry–Pérot interferometer, we discovered that Δ′, the Raman active electronic transition between the spin–orbit split 1s(p3/2) : Γ8 and 1s(p1/2) : Γ7 acceptor ground states, is a doublet for a boron impurity... (Read more)
- 83. Physica B 273-274, 15 (1999) , “Current problems in diamond: towards a quantitative understanding”, Gordon DaviesThis paper discusses three major areas of current work on the properties of point defects in diamond: attempting to introduce a shallow donor centre, studying the rôle of transition metals, and achieving a quantitative understanding of radiation effects. Recent work on the first two topics is... (Read more)
- 84. Physica B 273-274, 113 (1999) , “Electron paramagnetic resonance (EPR) and optical absorption studies of defects created in diamond by electron irradiation damage at 100 and 350 K”, D. J. Twitchen, D. C. Hunt, M. E. Newton, J. M. Baker, T. R. Anthony and W. F. BanholzerWe present a study, using electron paramagnetic resonance (EPR) and optical absorption spectroscopies, of high purity synthetic type IIa diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar; allowing irradiation at a measured sample temperature down to 100 K, at... (Read more)
- 85. Solid State Commun. 111, 397 (1999) , “EPR of new nickel–nitrogen center in annealed synthetic diamond”, R. I. Mashkovtsev and Yu. N. Pal'yanovIn addition to the NE1 and NE2 centers a new EPR center with S=1/2, which we have labeled the RM1 center, has been found in synthetic diamond grown from the Ni solvent and annealed at 2300 K. The RM1 spectrum appears as a pattern of nine lines with intensity distribution near 1:4:10:16:19:16:10:4:1... (Read more)
- 86. Diamond Relat. Mater. 7, 333 (1998) , “Correlation between optical absorption and EPR in high-pressure diamond grown from a nickel solvent catalyst”, A. T. Collins, H. Kanda, J. Isoya, C. A. J. Ammerlaan, J. A. van WykThere is a general tendency for the magnitude of the W8 electron paramagnetic resonance, attributed to substitutional negatively charged nickel, Nis−, to increase in sympathy with the strengths of the 1.883 eV and 2.51 eV absorption bands in high-pressure synthetic diamond. The ratio of the... (Read more)
- 87. Diamond Relat. Mater. 7, 1558 (1998) , “Relationship between electronic states of nickel-containing centres and donor nitrogen in synthetic and natural diamonds”, V. Nadolinny, A. Yelisseyev, O. Yurjeva, A. Hofstaetter, B. Meyer and B. FeigelsonSome features of the charge transfer process in donor nitrogen and nickel centres on exposure to X-ray and light illumination, have been examined in natural and synthetic diamonds by EPR and optical absorption. Donor nitrogen has been shown to serve as a bulk charge compensator of the paramagnetic... (Read more)
- 88. Diamond Relat. Mater. 7, 1282 (1998) , “A new proposal for the structure of platelets in diamond”, J. M. BakerA new model is proposed for platelets in diamond that is based upon the unambiguously determined molecular structure of the EPR centre known as R1, which comprises two parallel [001] split interstitials at nearest neighbour positions in the plane. The new feature of the model is the structure of... (Read more)
- 89. J. Chem. Phys. 109, 8471 (1998) , “Temperature dependence of spin-spin and spin-lattice relaxation times of paramagnetic nitrogen defects in diamond”, E. C. Reynhardt, G. L. High, J. A. van WykSpin-lattice relaxation times of P1 centers in a suite of two natural type Ib, two synthetic type Ib, and one natural type Ia diamonds were measured at 9.6 GHz as a function of temperature in the range 300 K > T > 4.2 K. An analysis of the results revealed that for three of the diamonds... (Read more)
- 90. J. Phys.: Condens. Matter 10, 9833 (1998) , “Optically detected electron paramagnetic resonance of Ni-related defects in synthetic diamond crystals”, Th. Pawlik, C. Noble, J. -M. SpaethSynthetic diamond crystals grown using a solvent catalyst that contains Ni were studied by optical detection of electron paramagnetic resonance (ODEPR) using the magnetic circular dichroism of the optical absorption (MCDA). The MCDA spectra in the infrared spectral region consist of a... (Read more)
- 91. J. Phys.: Condens. Matter 10, 11781 (1998) , “Electron paramagnetic resonance investigations of nickel defects in natural diamonds”, C. J. Noble, Th. Pawlik, J. -M. SpaethElectron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) spectra of natural blue diamonds from the Argyle mine in Western Australia are reported for the first time. These diamonds are shown to contain the NE2 centre which has been observed primarily in synthetic diamonds... (Read more)
- 92. Materials Lett. 34, 143 (1998) , “Defect formation in electron-irradiated synthetic diamond annealed in the temperature range 820–1120 K”, E. M. Shishonok, V. B. Shipilo, G. P. Popelnuk, I. I. Azarko, A. A. Melnikov and A. R. FilippThe phenomenon of the extreme increase of the concentration of dispersed paramagnetic nitrogen in electron-irradiated synthetic diamond specimens annealed in the temperature range 820–1120 K was revealed. It is established that the order of the reaction responsible for the decrease of... (Read more)
- 93. Phys. Rev. B 57, 2302 (1998) , “EPR and optical studies on polycrystalline diamond films grown by chemical vapor deposition and annealed between 1100 and 1900 K”, D. F. Talbot-Ponsonby, M. E. Newton, J. M. Baker, G. A. Scarsbrook, R. S. Sussmann, A. J. WhiteheadThe affect of annealing polycrystalline chemical vapor deposition (CVD) diamond in vacuo up to 1900 K has been studied using electron paramagnetic resonance (EPR) and infrared absorption. The concentration of the EPR centers at g=2.0028 and the infrared absorption in the CH region are insensitive to... (Read more)
- 94. Phys. Rev. B 57, 2264 (1998) , “Multifrequency EPR, 1H ENDOR, and saturation recovery of paramagnetic defects in diamond films grown by chemical vapor deposition”, D. F. Talbot-Ponsonby, M. E. Newton, J. M. Baker, G. A. Scarsbrook, R. S. Sussmann, A. J. Whitehead, S. PfenningerParamagnetic defects in free-standing polycrystalline chemical vapor deposition (CVD) diamond films have been studied using multifrequency electron paramagnetic resonance (EPR) (1?35 GHz), electron-nuclear double resonance (ENDOR), saturation recovery, and infrared absorption. The results confirm... (Read more)
- 95. phys. stat. sol. (b) 210, 13 (1998) , “Neutral Vacancies in Group-IV Semiconductors”, A. Zywietz, J. Furthm?ller, F. BechstedtAb initio plane-wave-supercell calculations are performed for the neutral monovacancies in silicon, silicon carbide and diamond using ultrasoft non-normconserving Vanderbilt pseudopotentials. We study the structure, the energetics and the single-particle energy spectrum. The local symmetry, the... (Read more)
- 96. Appl. Surf. Sci. 117-118, 574 (1997) , “ESR characterization of defects produced in diamond surface by B ion implantation”, Y. Show, F. Matsuoka, T. Izumi, M. Deguchi, M. Kitabatake, H. Sakakima, T. Hirao, Y. Mori, A. Hatta, T. Ito, A. HirakiThe defects produced by B ion implantation into CVD diamond films have been investigated by the electron spin resonance (ESR) method. The ESR analysis revealed the Pac-center (g = 2.003, ΔHPP = 10−16 Oe), which originates from carbon dangling bonds in the non-diamond phase carbon... (Read more)
- 97. Diamond Relat. Mater. 6, 778 (1997) , “Minimization of the defects concentration from boron incorporation in polycrystalline diamond films”, E. Colineau, E. Gheeraert, A. Deneuville, J. Mambou, F. Brunet and J. P. LagrangeElectron spin resonance, Raman diffusion and X-ray diffraction spectra of boron-doped diamond thin films were recorded. Both the signals related to particular defects (ESR, luminescence) or those related to the total concentration of defects (linewidth of the diamond Raman line, width of the X-ray... (Read more)
- 98. Diamond Relat. Mater. 6, 516 (1997) , “Nitrogen doping of diamond by ion implantation”, R. Kalish, C. Uzan-Saguy, B. Philosoph, V. Richter, J. P. Lagrange, E. Gheeraert, A. Deneuville, A. T. CollinsNitrogen doping is used to achieve field emission from diamond, and hence it is important to be able to dope diamond with nitrogen in a controlled way, such as that offered by ion implantation. The procedure developed for optimising p-type doping of diamond by B ion-implantation (cold implantation... (Read more)
- 99. Diamond Relat. Mater. 6, 356 (1997) , “ESR studies of incorporation of phosphorus into high-pressure synthetic diamond”, J. Isoya, H. Kanda, M. Akaishi, Y. Morita, T. OhshimaElectron spin resonance (ESR) signals associated with phosphorus, which should give microscopic evidence of incorporation of phosphorus into the lattice of diamond, have been searched in high-pressure synthetic diamond crystals. In a crystal grown from phosphorus catalyst, a new ESR spectrum... (Read more)
- 100. J. Appl. Phys. 82, 1201 (1997) , “Electron paramagnetic resonance imaging of the distribution of the single substitutional nitrogen impurity through polycrystalline diamond samples grown by chemical vapor deposition”, D. F. Talbot-Ponsonby, M. E. Newton, and J. M. BakerThe distribution of the single substitutional nitrogen impurity (NS0" align="middle">) through the thickness of diamond films grown by chemical vapor deposition has been studied using Electron Paramagnetic Resonance imaging. The design of an Electron Paramagnetic Resonance imaging... (Read more)
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