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- 1. Superlatt. Microstruct. 38, 413-420 (2005) , “EPR study on magnetic Zn1−xMnxO”, Mariana Diaconu, Heidemarie Schmidt, Andreas P?ppl, Rolf B?ttcher, Joachim Hoentsch, Andreas Rahm, Holger Hochmuth, Michael Lorenz ,Marius GrundmannDiluted magnetic semiconductors (DMS), systems formed by replacing cations of the host semiconductor material with transition-metal ions, are developed for further use in spintronics. A good combination as a DMS is Zn1−xMnxO due to the ZnO wide band gap (3.37 eV) and the matching ionic... (Read more)
- 2. Mater. Sci. Eng. A 375-377, 620-624 (2004) , “Evolution of the microstructure of disperse ZnO powders obtained by the freeze-drying method”, Z. V. Marinkovic, O. Milosevic, M. V. Nikolic, M. G. Kakazey, M. V. Karpec, T. V. Tomila , M. M. RisticFreeze-drying, as a cryochemical powder processing method is applied in the synthesis of ZnO submicrometer to nanosized powders. The process involves rapid freezing of the sprayed precursor solution, drying under vacuum by sublimation of the solvent and salt decomposition to oxide by thermal... (Read more)
- 3. Phys. Rev. B 69, 115210 (2004) , “Optical and magnetic properties of Mn in bulk GaN”, A. Wolos, M. Palczewska, M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, M. Bockowski, I. Grzegory, S. PorowskiWe report results of electron paramagnetic resonance, magnetization, and optical absorption studies of bulk GaN crystals doped with Mn and, for some samples, codoped with Mg acceptor. The experiments performed show that the charge state of the Mn ion in GaN depends on the Fermi level position in the... (Read more)
- 4. J. Appl. Phys. 93, 9697-9702 (2003) , “Growth and characterization of GaN:Mn epitaxial films”, T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, L. G?rgens, J. B. Philipp, O. AmbacherThe oxidation states of Mn in epitaxial GaN films grown by plasma induced molecular beam epitaxy were investigated by electron spin resonance (ESR), elastic recoil detection, superconducting quantum interference device magnetization, and photothermal deflection spectroscopy measurements. Comparison... (Read more)
- 5. Phys. Rev. B 67, 165215 (2003) , “Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films”, T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, O. AmbacherHigh quality Mn-doped GaN and AlN films grown by molecular beam epitaxy have been investigated with X-band electron spin resonance (ESR). The observed resonance patterns are well described by the spin Hamiltonian for isolated 55Mn2+ centers with electronic spin S... (Read more)
- 6. Phys. Rev. B 63, 233202 (2001) , “Tetrahedral Mni4 Cluster in Silicon”, J. Wedekind, H. Vollmer, R. Labusch.Mni40 clusters were investigated by electron paramagnetic resonance in silicon specimens with initial doping concentrations between 1.5?1015?P cm-3 and 5?1016?B cm-3. In n-type samples and in intrinsic samples, we obtained the EPR... (Read more)
- 7. Phys. Rev. B 61, 1918 (2000) , “EPR investigation of manganese clusters in silicon”, J. Martin, J. Wedekind, H. Vollmer, and R. LabuschManganese centers were investigated in silicon specimens with initial doping concentrations between 1.5?1015 P cm-3 and 6?1015 B cm-3. All known Mn centers could be observed but the cluster Mni3Mni was missing in highly-boron-doped... (Read more)
- 8. Solid State Commun. 101, 611-615 (1997) , “Identification of iron transition group trace impurities in GaN bulk crystals by electron paramagnetic resonance”, P. G. Baranov, I. V. Ilyin and E. N. MokhovWe report on the observation of electron paramagnetic resonance of iron, manganese and nickel trace impurities in bulk GaN crystals grown by the sublimation sandwich method. The resolved hyperfine structure due to interaction with 55Mn (I = 5/2) nuclei has been observed in GaN, allowing unambiguous... (Read more)
- 9. Appl. Phys. Lett. 58, 1742 (1991) , “Electron spin resonance study of laser-annealed (Zn,Mn)O ceramics”, Katsuyasu Kawano, Ryouhei Nakata, and Minoru SumitaInvestigations have been made on the effects of pulse laser annealing on the ceramics (Zn,Mn)O by means of electron spin resonance (ESR) measurements. A remarkable change in the ESR spectrum was observed after annealing by a Nd:YAG pulse laser (=1.064 µm, 5–7 J/cm2). It... (Read more)
- 10. Phys. Rev. B 37, 7268 (1988) , “Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR”, D. A. van Wezep, C. A. J. AmmerlaanThe electron-nuclear double-resonance spectra of interstitial 47Ti+ and 49Ti+ in silicon have been measured at 4.2 K. Spin Hamiltonians for these systems were determined and had to include hyperfine contributions of the type S3I and... (Read more)
- 11. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
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