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- 1. Phys. Rev. B 74, 075332 (2006) , “Point defects on the (110) surfaces of InP, InAs, and InSb: A comparison with bulk”, A. Höglund, C. W. M. Castleton, M. Göthelid, B. Johansson,, and S. MirbtThe basic properties of point defects, such as local geometries, positions of charge-transfer levels, and formation energies, have been calculated using density-functional theory, both in the bulk and on the (110) surface of InP, InAs, and InSb. Based on these results we discuss the electronic... (Read more)
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Updated at 2010-07-20 16:50:39
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