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- 1. J. Appl. Phys. 99, 083510 (2006) , “Capture barrier for DX centers in gallium doped Cd1–xMnxTe”, Ewa Placzek-Popko, Anna Nowak, Jan Szatkowski, and Kazimierz SieranskiWe report on the capture barrier for the gallium related DX center in Cd0.99Mn0.01Te. In order to determine the barrier height, two methods were applied: an analysis of the persistent photoconductivity decay and the optical deep level transient spectroscopy... (Read more)
- 2. Phys. Rev. B 45, 5933 (1992) , “Magnetic circular dichroism of the DX center in Al0.35Ga0.65As:Te”, R. E. Peale, Y. Mochizuki, H. Sun, G. D. WatkinsMagneto-optical absorption spectra of 0.4-mm-thick, single-crystal Al0.35Ga0.65As:Te give evidence for two bleachable absorbers, one of which is identified as the DX center. The bleached-state absorption coefficient and magnetic circular dichroism (MCD), measured from 0.66 to... (Read more)
- 3. Phys. Rev. B 45, 13745 (1992) , “Validity of the broken-bond model for the DX center in GaAs”, Mineo Saito, Atsushi Oshiyama, Osamu SuginoThe validity of the broken-bond model for the DX center is examined by performing supercell calculations within the local-density approximation for column-IV donors in GaAs. We confirm that the broken-bond geometry is the most stable among the atomic structures accompanied with large lattice... (Read more)
- 4. J. Phys. Soc. Jpn. 60, 3093 (1991) , “First Principle Calculation of the DX-CenterGround-States in GaAs, AlxGa1-xAs Alloysand AlAs/GaAs Superlattices”, Eiichi Yamaguchi, Kenji Shiraishi, Takahisa OhnoThe atomistic nature of the deep donor levels referred to as DX centers in GaAs, AlxGa1-xAs alloys and AlAs/GaAs superlattices is investigated by applying the ab initio self-consistent pseudopotential method to 64-atom super cells. The total energy and... (Read more)
- 5. Phys. Rev. Lett. 66, 774 (1991) , “Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure”, J. A. Wolk, M. B. Kruger, J. N. Heyman, W. Walukiewicz, R. Jeanloz, E. E. HallerWe report the observation of a local vibrational mode (LVM) in hydrostatically stressed, Si-doped GaAs. The corresponding infrared absorption peak is distinct from the SiGa shallow-donor LVM peak and is assigned to the Si DX center. The relative intensities of the Si DX LVM and the Si... (Read more)
- 6. Semicond. Sci. Technol. 6, B9 (1991) , “Comparison of three DX structural calculations presented at Thessaloniki”, G. A. BaraffThree structural calculations of the DX centre presented at Thessaloniki are of especial interest. Although they were carried out using nominally the same calculational apparatus, namely first-principles pseudopotentials, local density approximation, large unit cells etc, the three reached vastly... (Read more)
- 7. Semicond. Sci. Technol. 6, B70 (1991) , “Bistability, local symmetries and charge states of Sn-related donors in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy”, D. L. Williamson, P. GibartThe bistable character of Sn donors AlxGa1-xAs for x>0.2 or in GaAs under pressure >2.4 GPa has been studied by 119Sn Mossbauer spectroscopy (MS). The shallow Sn donor state and the deep Sn DX state are observed to exist simultaneously and are readily... (Read more)
- 8. Semicond. Sci. Technol. 6, B111 (1991) , “Metastable defects in silicon: hints for DX and EL2?”, G. D. WatkinsA review is given of defects that display metastability in silicon, with emphasis on those that have been identified and the various mechanisms that they reveal for the phenomenon. Pair defects described include interstitial-iron-substitutional-group-III-acceptors and ones formed by interstitial... (Read more)
- 9. J. Appl. Phys. 67, R1 (1990) , “Deep donor levels (DX centers) in III-V semiconductors”, P. M. MooneyDX centers, deep levels associated with donors in III-V semiconductors, have been extensively studied, not only because of their peculiar and interesting properties, but also because an understanding of the physics of these deep levels is necessary in order to determine the usefulness... (Read more)
- 10. Jpn. J. Appl. Phys. 29, L388 (1990) , “Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si”, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoDX centers in GaAs codoped with Ge and Si have been investigated under a hydrostatic pressure, where Ge acts as a DX center, and Si as a shallow donor. It is demonstrated that the number of electrons trapped by the Ge DX center at 22 kbar increases with Si concentration and tends to saturate at a... (Read more)
- 11. Jpn. J. Appl. Phys. 29, L1572 (1990) , “Low-Temperature Static Magnetic Susceptibility of Al0.3Ga0.7As with DX Centers”, Shingo Katsumoto, Noriaki Matsunaga, Yasuhiro Yoshida, Katsuyuki Sugiyama, Shun-ichi KobayashiWe have measured the static magnetic susceptibility of Al0.3Ga0.7As doped with 1×1018 cm-3 Te from 20 mK to 1 K in order to study the electron ground state of the DX center. We observed Curie-law temperature dependence of the susceptibility which... (Read more)
- 12. Phys. Rev. B 42, 7174 (1990) , “Stability of DX centers in AlxGa1-xAs alloys ”, S. B. Zhang, D. J. ChadiThe band-gap dependence of the binding energy of Si-induced DX centers in AlxGa1-xAs alloys was determined from an ab initio total-energy approach. Band-structure modifications resulting from changes in alloy composition and hydrostatic pressure were examined. The... (Read more)
- 13. Phys. Rev. B 42, 1500 (1990) , “Electron-paramagnetic-resonance study of the Te donor in Ga0.70Al0.30As”, H. J. von Bardeleben, M. Zazoui, S. Alaya, P. GibartWe report an electron-paramagnetic-resonance (EPR) study of a group-VI donor in Ga1-xAlxAs (x=0.30). No EPR spectrum associated with the DX ground state could be detected. After photoexcitation with E?0.6 eV an EPR spectrum is observed, which is attributed to the... (Read more)
- 14. Phys. Rev. B 42, 11791 (1990) , “Donor states in GaAs under hydrostatic pressure”, X. Liu, L. Samuelson, M.-E. Pistol, M. Gerling, and S. NilssonSpectroscopic studies have been carried out for GaAs crystals under hydrostatic pressure, intended for the investigation of effective-mass donor levels associated with different conduction-band minima and the DX center. Our results reveal the existence of three donor states appearing in the band... (Read more)
- 15. Jpn. J. Appl. Phys. 28, L891 (1989) , “The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration”, Toshio Baba, Masashi Mizuta, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoThe energy-level structure of the DX centers corresponding to specific local environments was investigated under hydrostatic pressure. Several discrete DX levels, each of which was a well-defined single level, were clearly resolved. The energy level of the Si... (Read more)
- 16. Phys. Rev. B 39, 5554 (1989) , “Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs”, P. M. Mooney, W. Wilkening, U. Kaufmann, T. F. KuechWe report measurements of an EPR signal in indirect-gap Si-doped AlxGa1-xAs whose intensity increases after illumination at low temperature. The data indicate that this signal comes from a hydrogenic level associated with the X valley of the conduction band. Measurements of the... (Read more)
- 17. Phys. Rev. B 39, 10063 (1989) , “Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys ”, D. J. Chadi, K. J. ChangThe energetics of the shallow-deep transition of donor states in AlxGa1-xAs alloys and the problem of Fermi-level pinning by DX centers in highly doped GaAs are examined via simple theoretical models and ab initio self-consistent pseudopotential total-energy calculations. The... (Read more)
- 18. Phys. Rev. Lett. 63, 2276 (1989) , “Photoluminescence transients due to hole capture at DX centers in AlxGa1-xAs:Si”, G. Brunthaler, K. Ploog, W. JantschThe near-band-gap photoluminescence of AlGaAs:Si shows a slow intensity transient after cooling the sample in darkness to low temperatures. This transient correlates to the Si dopant concentration. By investigating the behavior for below- and above-band-gap illumination we show that the observed... (Read more)
- 19. Appl. Phys. Lett. 53, 749 (1988) , “Physical origin of the DX center”, J. C. Bourgoin and A. MaugerWhen intervalley mixing effects are large enough, they induce a sharp shallow deep instability for a substitutional impurity. We show that this is the case in GaAs for the ground state associated with the L valleys, which becomes located in the forbidden gap under hydrostatic pressure or in... (Read more)
- 20. Appl. Phys. Lett. 53, 2546 (1988) , “Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1–xAs of low Al content”, P. M. Mooney, T. N. Theis, and S. L. WrightWe report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1–xAs of very low Al content. For the first time, discrete emission rates corresponding to different... (Read more)
- 21. Appl. Phys. Lett. 52, 383 (1988) , “Direct evidence of the DX center link to the L-conduction-band minimum in GaAlAs”, E. Calleja, A. Gomez, and E. MuñozHydrostatic pressure techniques together with deep level transient spectroscopy (DLTS) measurements have shown that the Si-DX center in GaAlAs is linked to the L-conduction-band minimum. When hydrostatic pressure is applied to a 74% Al content sample, an exponential reduction of... (Read more)
- 22. J. Appl. Phys. 63, 1086 (1988) , “Deep-level analysis in Te-doped GaAs0.62P0.38”, M. Kaniewska and J. KaniewskiDeep-level transient spectroscopy and photocapacitance techniques have been used to study the features of the main electron trap, with thermal activation energy equal to EB=0.39 eV, present in Te-doped GaAs0.62P0.38, obtained by vapor-phase epitaxy.... (Read more)
- 23. Phys. Rev. B 37, 8298 (1988) , “Evidence for large lattice relaxation at the DX center in Si-doped AlxGa1-xAs”, P. M. Mooney, G. A. Northrop, T. N. Morgan, H. G. GrimmeissNew measurements of the energy dependence of the photoionization cross section of the DX center in Si-doped AlxGa1-xAs are reported. With the use of a tunable infrared laser which provides sufficient light intensity in a very narrow wavelength range, the photoionization cross... (Read more)
- 24. Phys. Rev. B 37, 1043 (1988) , “Characterization of DX center in the indirect AlxGa1-xAs alloy”, M. Mizuta, K. MoriThe behavior of the DX center in AlxGa1-xAs?(x?0.6) doped with Si and Se was investigated through photo-Hall measurements. The simultaneous existence of the shallow (metastable) and deep DX levels has been proven by the observation of persistent photoconductivity (PPC) whose... (Read more)
- 25. Phys. Rev. Lett. 60, 2187 (1988) , “Metastability of the Isolated Arsenic-Antisite Defect in GaAs”, D. J. Chadi and K. J. ChangWe propose that a neutral As-antisite defect in GaAs has a stable fourfold and a metastable, threefold interstitial configuration differing by 0.24 eV in their energies. The barrier height from the metastable to the normal state is calculated to be 0.34 eV. The metastable geometry is predicted to... (Read more)
- 26. J. Appl. Phys. 62, 4786 (1987) , “The capture barrier of the DX center in Si-doped AlxGa1–xAs”, P. M. Mooney, N. S. Caswell, and S. L. WrightWe report measurements of the capture barrier for the DX center in Si-doped AlxGa1–xAs as a function of the alloy composition. A model of the capture process which requires a distribution of capture barrier heights has been fit to the data for... (Read more)
- 27. Jpn. J. Appl. Phys. 26, L273 (1987) , “Determination of Al Composition and DLTS Measurements of AlxGa1-xSb on GaSb Substrate”, Yoshikazu Takeda, Xiao Cheng Gong, Yu Zhu, Akio SasakiDLTS (Deep Level Transient Spectroscopy) measurements have been carried out to investigate the electron-trap levels in Te-doped AlxGa1-xSb over a composition range from 0 to 0.4. Deep electron-traps were not detected in Te-doped n-type GaSb and AlGaSb with Al... (Read more)
- 28. Phys. Rev. Lett. 60, 2183 (1987) , “Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2?”, Jaroslaw Dabrowski, Matthias SchefflerWe performed parameter-free, self-consistent calculations of the electronic structures, total energies, and forces of the As antisite, of an As-interstitial-Ga-vacancy defect pair, and of various configurations between these limits. The total-energy surface exhibits an interesting metastability. The... (Read more)
- 29. Semicond. Sci. Technol. 2, 1 (1987) , “A new model of deep donor centres in AlxGa1-xAs”, J. C. M. Henning, J. P. M. AnsemsSpectroscopic investigations of Si-doped AlxGa1-xAs reveal that the deep donor ('DX centre') exhibits an electron-phonon interaction of moderate strength. The Huang-Rhys factor turns out to be 0.5 and the dominant coupling is with the LO1 phonons. These data lead to... (Read more)
- 30. Phys. Rev. B 33, 4320 (1986) , “DX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAs”, Atsushi Oshiyama, Shuhei OhnishiA new microscopic model for the origin of the DX center in Si-doped AlxGa1-xAs is proposed based on discrete variational X? cluster calculations. The calculated level structure shows that the antibonding A1 state of Si, which lies in the conduction bands as a... (Read more)
- 31. Jpn. J. Appl. Phys. 24, L143 (1985) , “Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System”, Masashi Mizuta, Masami Tachikawa, Hiroshi Kukimoto, Shigeru MinomuraAn experimental result that the DX center appears in GaAs:Si and GaAsd:Sn under hydrostatic pressure of about 30 kbars has been obtained for the first time. This indicates clearly that the DX center in the AlGaAs alloy system is due to a substitutional donor itself (not a complex referred to as... (Read more)
- 32. Jpn. J. Appl. Phys. 23, 1594 (1984) , “DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy”, Masami Tachikawa, Masashi Mizuta, Hiroshi KukimotoDeep levels, the so-called DX centers, in the AlxGa1-xAs alloy system grown by liquid-phase epitaxy (LPE) were investigated by junction-capacitance spectroscopy. The dependence of the activation energy of the DX center in Sn-doped... (Read more)
- 33. J. Appl. Phys. 50, 6334 (1979) , “The sulfur-related trap in GaAs1–xPx”, R. A. Craven and D. FinnA systematic study has been made of the deep level introduced into GaAs1–xPx alloy material by S doping. Conclusive documentation of the linear relationship between S concentration and the deep-level trap concentration is presented for x?0.4. The... (Read more)
- 34. Phys. Rev. B 19, 1015 (1979) , “Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-doped AlxGa1-xAs”, D. V. Lang, R. A. Logan, M. JarosPhotocapacitance measurements have been used to determine the electron photoionization cross section of the centers responsible for persistent photoconductivity in Te-doped AlxGa1-xAs. The cross-section data, which have been obtained at various temperatures and for crystals of... (Read more)
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