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- 1. Appl. Phys. Lett. 91, 122109 (2007) , “Determining the defect parameters of the deep aluminum-related defect center in silicon”, Philipp Rosenits, Thomas Roth, Stefan W. Glunz, and Svetlana BeljakowaThrough a combined application of two characterization methods, deep-level transient spectroscopy and lifetime spectroscopy, the lifetime-limiting defect level in intentionally aluminum-contaminated Czochralski silicon has been analyzed and a complete set of defect parameters could be obtained. This... (Read more)
- 2. Physica B 401, 250 (2007) , Elsevier , “Doubly charged state of EL2 defect in MOCVD-grown GaAs ”, Nazir A. Naz, Umar S. Qurashi, Abdul Majid and M. Zafar IqbalEL2 is the ubiquitous native defect in crystalline GaAs grown by a variety of different techniques. It has been proposed to be a doubly charged deep-level center with two states having distinct energy levels in the band gap. While the singly charged state has been the subject of many experimental studies and is, therefore, well established, the doubly charged state has only been occasionally alluded to in the literature. This paper provides evidence for a dominant inadvertent deep level in p-type GaAs most likely to be the doubly charged state of the EL2 center. Deep-level transient spectroscopy (DLTS) has been applied to characterize epitaxial layers of p-type GaAs grown on p+ GaAs substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). A pronounced peak is observed in the majority carrier (hole) emission deep-level spectra. Thermal emission rate of holes from the corresponding deep level is found to exhibit a strong electric field dependence, showing an increase of more than two orders of magnitude with an increase of the electric field by a factor of~2. The thermal activation energy for this level is found to vary from 0.29 to 0.61 eV as the electric field is varied from 2.8×105 to 1.4×105 V/cm. Direct pulse-filling measurements point to a temperature-dependent behavior of the hole capture cross section of this level. We identify this inadvertent deep-level defect, commonly observed in p-type AsGa grown by a variety of different methods, with the doubly charged state of the well-known AsGa antisite related defect, EL2. (Read more)
- 3. Advances in Science and Technology 46, 73 (2006) , Trans Tech Publications, Switzerland , “Electric-Field-Enhanced Thermal Emission from Osmium-Related”, M. Zafar Iqbal, A. Majid, A. Dadgar and D. BimbergDeep-level defects related with 5d transition metal, osmium (Os) have been studied in ntype GaAs. Os has been incorporated in epitaxial n-GaAs layers in situ, during growth by lowpressure metal-organic chemical vapour phase epitaxy (MOVPE) technique. Mesa p+nn+ junction diodes are fabricated for investigations by deep level transient spectroscopy (DLTS). Two deeplevel peaks, observed in majority carrier (electron) emission spectra, Os1 and Os2, show a significant shift in peak positions to lower temperatures with the applied junction reverse bias, demonstrating enhancement of the thermal emission rate by the junction electric field. Doublecorrelation DLTS (DDLTS) measurements have been employed for accurate quantitative investigations of the observed field dependence. However, in view of the relatively small concentration of the deep level Os1, this technique is found to yield reliable data only for the deep level corresponding to the dominant peak, Os2. Detailed data have been obtained on the field effect for Os2, extending over junction electric field values 3 x 106 V/m - 1.2 x 107 V/m. The measured emission rate signatures show a reduction of the thermal activation energy from 0.48 eV to 0.21 eV for Os2 over this electric field range. Analysis of the data in terms of the recent theoretical work on field dependence indicates that Os2 is associated with a substitutional Os donor. (Read more)
- 4. Appl. Phys. Lett. 89, 202114 (2006) , “Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium”, E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, and P. ClauwsDefect formation during Pd and Pt germanidation of n-type germanium, using rapid thermal annealing in the range of 300–500 °C, is investigated by deep level transient spectroscopy. Small concentrations of an electron trap at ~EC−0.385 eV are found,... (Read more)
- 5. Appl. Phys. Lett. 89, 112107 (2006) , “Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy”, Juan A. Jiménez Tejada, Pablo Lara Bullejos, Juan A. López Villanueva, Francisco M. Gómez-Campos, Salvador Rodríguez-Bolívar, and M. Jamal DeenRecombination centers in thin asymmetrical p-n junctions were analyzed in the context of capacitance transient experiments. The combined effect of the thin low-doped region of the junction and the nonzero value of the occupation factor of the recombination center in the depletion layer... (Read more)
- 6. Appl. Phys. Lett. 88, 183506 (2006) , “Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium”, E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, S. Forment, and P. ClauwsNickel-germanide Schottky barriers have been made on n-type germanium and evaluated by deep level transient spectroscopy in order to detect possible metal indiffusion during the 30 s rapid thermal annealing (RTA) employed for the germanidation. It is shown that while no electron traps have... (Read more)
- 7. Appl. Phys. Lett. 88, 182103 (2006) , “Observation of minority-carrier traps in InGaN/GaN multiple-quantum-well light-emitting diodes during deep-level transient spectroscopy measurements”, J. W. Kim, G. H. Song, J. W. LeeAn unusual appearance of a peak in the deep-level transient spectroscopy (DLTS) data for minority-carrier traps from an InGaN/GaN multiple-quantum-well (MQW) light-emitting diode, under a bias condition provided by a square pulse of varying height superimposed over the reverse-bias voltage, is newly... (Read more)
- 8. Appl. Phys. Lett. 88, 141901 (2006) , “Defects in Cu2O studied by deep level transient spectroscopy”, G. K. Paul, Y. Nawa, H. Sato, T. Sakurai, and K. AkimotoHole traps in p-type Cu2O were studied by means of deep level transient spectroscopy in the heterostructure of p-Cu2O/i-ZnO/n-ZnO. In addition to the trap level at about 0.45 eV from the valance band edge, which is already reported as being due to... (Read more)
- 9. J. Appl. Phys. 100, 113728 (2006) , “Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons”, Katsunori Danno and Tsunenobu KimotoDeep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy (DLTS). The Z1/2 and EH6/7 centers are dominant in as-grown samples. After electron irradiation at 116 keV, by which only carbon atoms may be displaced, the... (Read more)
- 10. J. Appl. Phys. 100, 074313 (2006) , “Deep levels in silicon Schottky junctions with embedded arrays of ? -FeSi2 nanocrystallites”, A. Tsormpatzoglou, D. H. Tassis, C. A. Dimitriadis, L. Dózsa, N. G. Galkin, D. L. Goroshko, V. O. Polyarnyi, and E. A. ChusovitinSchottky contacts on p-type silicon, with embedded arrays of β-FeSi2 nanocrystallites, were studied by current-voltage (I-V), deep level transient spectroscopy (DLTS), and low-frequency noise measurements. Forward I-V characteristics on logarithmic... (Read more)
- 11. J. Appl. Phys. 100, 034503 (2006) , “Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates”, M. González, C. L. Andre, R. J. Walters, S. R. Messenger, J. H. Warner, J. R. Lorentzen, A. J. Pitera, E. A. Fitzgerald, and S. A. RingelThe effect of 2 MeV proton radiation on the introduction of deep levels in GaAs grown on compositionally graded SiGe/Si substrates was investigated using deep level transient spectroscopy (DLTS). Systematic comparisons were made with identical layers grown on both GaAs and Ge substrates to directly... (Read more)
- 12. J. Appl. Phys. 100, 023704 (2006) , “Transformation behavior of room-temperature-stable metastable defects in hydrogen-implanted n-type silicon studied by isothermal deep-level transient spectroscopy”, Yutaka TokudaIsothermal deep-level transient spectroscopy (DLTS) with a single pulse has been used to study the transformation behavior of hydrogen-related metastable defects labeled EM1 (Ec–0.28 eV) and EM2 (Ec–0.37 eV), which are observed in... (Read more)
- 13. J. Appl. Phys. 99, 033701 (2006) , “Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC”, A. Castaldini, A. Cavallini, L. Rigutti, S. Pizzini, A. Le Donne, and S. BinettiThe effects of low-temperature annealing in 8.2 MeV electron-irradiated 4H-SiC Schottky diodes were investigated. Deep-level transient spectroscopy and minority-carrier diffusion length (Ld) measurements were carried out on not-irradiated samples and on irradiated... (Read more)
- 14. J. Appl. Phys. 99, 023702 (2006) , “Deep traps in oxide-nitride-oxide stacks fabricated from hydrogen and deuterium containing precursors”, G. Rosenman, M. Naich, Ya. Roizin, and Rob van SchaijkThe energy spectrum of the traps and thermal stability of stored charge have been studied by the thermostimulated exoelectron emission method in hydrogenated H and deuterated D oxide-nitride-oxide (ONO) multilayer stacks of silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memories. It is... (Read more)
- 15. J. Appl. Phys. 99, 013515 (2006) , “Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H–SiC Schottky diodes”, F. Roccaforte, S. Libertino, V. Raineri, A. Ruggiero, V. Massimino, and L. CalcagnoIn this paper, the formation and evolution of defects induced by ion irradiation with 1 MeV Si+ ions in Ni2Si/4H–SiC Schottky diodes were studied and correlated with the electrical properties of the contacts. The current-voltage characteristics of the contacts... (Read more)
- 16. Phys. Rev. B 74, 233203 (2006) , “Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC”, A. Galeckas, A. Hallén, S. Majdi, J. Linnros, and P. PirouzWe report on electronic properties of single- and double-layer stacking faults in 4H-SiC and provide an insight into apparent distinctions of recombination-enhanced defect reactions at these faults. Photoluminescence imaging spectroscopy and deep-level transient spectroscopy experiments... (Read more)
- 17. Phys. Rev. B 74, 195204 (2006) , “Interaction of iron with the local environment in SiGe alloys investigated with Laplace transform deep level spectroscopy”, Vl. Kolkovsky, A. Mesli, L. Dobaczewski, N. V. Abrosimov, Z. R. ytkiewicz, and A. R. PeakerLaplace transform deep level transient spectroscopy (LDLTS) is used to investigate the alloy effects on iron related deep centers in Si1−xGex. A clear buildup of alloy disorder as a function of the germanium content has been observed for the isolated... (Read more)
- 18. Phys. Rev. B 74, 045208 (2006) , “Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy”, G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, and M. GrundmannHigh-quality single crystals of ZnO in the as-grown and N+ ion-implanted states have been investigated using a combination of three experimental techniques—namely, positron lifetime/slow positron implantation spectroscopy accompanied by theoretical calculations of the positron... (Read more)
- 19. Phys. Rev. B 73, 195209 (2006) , “Electrical activity of the PtH2 complex in silicon: High-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique”, Vl. Kolkovsky, O. Andersen, L. Dobaczewski, A. R. Peaker, and K. Bonde NielsenHigh-resolution Laplace deep-level spectroscopy combined with the uniaxial stress technique has been used to study stress-energy piezospectroscopic tensor components of the platinum-dihydrogen complex in silicon. The effect of stress on the defect has been observed either as the stress-induced... (Read more)
- 20. Phys. Rev. B 73, 033204 (2006) , “Electrical characterization of metastable carbon clusters in SiC: A theoretical study”, A. Gali, N. T. Son, E. JanznFirst-principles calculations carried out in 3C- and 4H-SiC show that small metastable carbon clusters can be created in irradiated SiC. The metastable carbon clusters possess occupation levels in the p-type as well as in the n-type 4H-SiC. Depending on the... (Read more)
- 21. AIP Conf. Proc. 772, 147 (2005) , American Institute of Physics , “Deep levels in osmium doped p-type GaAs grown by metal organic chemical vapor deposition”, M. Zafar Iqbal, A. Majid, A. Dadgar, and D. BimbergResults of a preliminary study on deep level transient spectroscopy (DLTS) investigations of osmium (Os) impurity in p-type GaAs, introduced in situ during MOCVD crystal growth, are reported for the first time. Os is clearly shown to introduce two prominent deep levels in the lower half-bandgap of GaAs at energy positions Ev + 0.42 eV (OsA) and Ev + 0.72 eV (OsB). A minority-carrier emitting defect feature observed in the upper half-bandgap is shown to consist of a band of Os-related deep levels with a concentration significantly higher than that of the majority carrier emitting deep levels. Detailed data on the emission rate signatures and related parameters of the Os-related deep levels are reported. ©2005 American Institute of Physics (Read more)
- 22. AIP Conf. Proc. 772, 143 (2005) , American Institute of Physics , “Deep levels in Ruthenium doped p-type MOCVD GaAs”, A. Majid, M. Zafar Iqbal, A. Dadgar, and D. BimbergRuthenium is introduced into GaAs during epitaxial growth by MOCVD. Preliminary results of DLTS investigation of the defect states associated with this 4d transition-metal impurity are reported for the first time. At least three deep levels are identified with Ru in the lower half-bandgap of GaAs at energy positions Ev + 0.38 eV, Ev + 0.52 eV and Ev + 0.65 eV, the last with a relatively higher concentration than the first two. At least one Ru-related deep level is observed in the upper half-bandgap at Ec – 0.66 eV with a significantly high concentration. Emission rate signatures and associated characteristics of all these defect levels are reported. The Ev + 0.65 eV level is found to exhibit an electric field dependent thermal emission characteristic. ©2005 American Institute of Physics (Read more)
- 23. J. Appl. Phys. 98, 083709 (2005) , American Institute of Physics , “Osmium impurity-related deep levels in n-type GaAs”, A. Majid, M. Zafar Iqbal, A. Dadgar and D. BimbergThe 5d transition-metal impurity, osmium, has been incorporated during the growth of n-type GaAs epitaxial layers using low-pressure metal-organic chemical-vapor deposition to characterize defect states associated with this heavy and, therefore, thermally stable dopant impurity.... (Read more)
- 24. Appl. Phys. Lett. 85, 3780 (2004) , “Low temperature annealing of electron irradiation induced defects in 4H-SiC”, Antonio Castaldini, Anna Cavallini, Lorenzo Rigutti, Filippo NavaLow temperature annealing of electron irradiation-induced deep levels in 4H-SiC is reported. The major deep level transient spectroscopy peak S2 associated with the energy level at Ec–0.39 eV disappears in the temperature range 360–400 K, and some rearrangement... (Read more)
- 25. Appl. Phys. Lett. 85, 1716 (2004) , “Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing”, Y. Negoro, T. Kimoto, and H. MatsunamiN-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one... (Read more)
- 26. Appl. Phys. Lett. 84, 1704 (2004) , “Bistable defect in mega-electron-volt proton implanted 4H silicon carbide”, D. M. Martin, H. Kortegaard Nielsen, P. L?v?que, A. Hall?n, G. Alfieri, B. G. SvenssonEpitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1×1012 cm–2 creates an estimated initial concentration of... (Read more)
- 27. J. Vac. Sci. Technol. B 22, 120-125 (2004) , “Properties of Fe-doped semi-insulating GaN structures”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, S. J. PeartonThe properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported. The 300 K sheet resistivity of the films was 2×1010 /square with an activation energy of the dark conductivity of 0.5 eV. The Fermi level is also pinned at... (Read more)
- 28. Phys. Rev. Lett. 92, 125504 (2004) , “Low Energy Electron Irradiation Induced Deep Level Defects in 6H–SiC: The Implication for the Microstructure of the Deep Levels E1/E2”, X. D. Chen, C. L. Yang, M. Gong, W. K. Ge, S. Fung, C. D. Beling, J. N. Wang, M. K. Lui, and C. C. LingN-type 6H–SiC samples irradiated with electrons having energies of Ee = 0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for Ee0.3 MeV,... (Read more)
- 29. J. Appl. Phys. 94, 3115 (2003) , American Institute of Physics , “Characteristics of deep levels associated with rhodium impurity in n-type GaAs”, M. Zafar Iqbal, A. Majid, Shah Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar and D. Bimberg.,Deep levels have been characterized in n-type GaAs crystalline films grown by metalorganic chemical vapor deposition, doped in situ with 4d transition metal, rhodium, using the deep level transient spectroscopy (DLTS) technique. Two prominent broad bands of deep levels are found... (Read more)
- 30. Physica B 340-342, 743 (2003) , “Annealing study of a bistable defect in proton-implanted n-type 4H-SiC”, H. Kortegaard Nielsen, D. M. Martin, P. Lévêque, A. Hallén and B. G. SvenssonThe thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5 MeV protons to a... (Read more)
- 31. Physica B 340, 362 (2003) , Elsevier , “Deep levels in rhodium-doped p-type MOCVD GaAs ”, A. Majid, M. Zafar Iqbal, A. Dadgar, D. Bimbergp-type GaAs epilayers grown by metal-organic chemical vapour deposition (MOCVD) technique, doped in situ with rhodium (Rh) impurity, have been studied by deep level transient spectroscopy (DLTS). A composite peak consisting of emission signals from at least two deep levels in the lower-half band gap is identified with Rh. This peak is resolved using double-correlation DLTS (DDLTS) measurements, providing the clear energy positions of the Rh-related deep levels as Ev+0.35 eV and Ev+0.51 eV. Emission rate signatures and other parameters are reported for these deep levels. They are observed to show electric-field dependent emission signatures. No significant minority carrier (electron) deep level could be clearly identified with Rh due to the presence of significant inadvertent features in the injection DLTS spectrum. Results are compared with our earlier study of Rh-doped, n-type, MOCVD GaAs. (Read more)
- 32. Physica B 340, 358 (2003) , “Osmium related deep levels in n-type GaAs ”, M. Zafar Iqbal, A. Majid, A. Dadgar, D. BimbergDeep levels due to 5d transition metal, osmium (Os), in n-type GaAs epitaxial layers grown by metal-organic vapour-phase epitaxy are investigated using deep level transient spectroscopy (DLTS). Two clear and prominent peaks are observed in majority carrier (electron) emission spectra in GaAs:Os samples in addition to a weaker, broad feature at higher temperatures, which are absent in the Os-free, reference samples. The well-resolved, prominent peaks are attributed to deep levels associated with Os impurity having activation energies Ec−0.28 eV and Ec−0.41 eV at a junction electric field of not, vert, similar1.4×105 V/cm. Both of these peaks are found to be field dependent. Detailed data on emission rate signatures, apparent electron capture cross-sections and defect concentrations are reported for these levels. No Os-related deep level peaks could be clearly delineated in minority-carrier injection DLTS, at this stage, although some evidence is found for a low-energy deep level band. (Read more)
- 33. Physica B 340-342, 15-24 (2003) , “Defects in SiC”, E. Janz?n, I. G. Ivanov, N. T. Son, B. Magnusson, Z. Zolnai, A. Henry, J. P. Bergman, L. Storasta, F. CarlssonRecent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H–SiC in the dipole approximation are derived and the ionization energy for the N donor at... (Read more)
- 34. Appl. Phys. Lett. 79, 3950 (2001) , “Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy”, A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftsh?user, H. ItohAnnealing behavior of vacancies and the Z1/2 levels in n-type 4H–SiC epilayers after 2 MeV electron irradiation has been studied using positron annihilation and deep-level transient spectroscopy. Isochronal annealing studies indicate that silicon vacancy-related defects... (Read more)
- 35. J. Appl. Phys. 90, 3377 (2001) , “Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy”, A. Kawasuso, F. Redmann, R. Krause-Rehberg, T. Frank, M. Weidner, G. Pensl, P. Sperr, H. ItohThe annealing behavior of defects in n-type 6H SiC epilayers irradiated with 2 MeV electrons have been studied using positron annihilation and deep level transient spectroscopy. Vacancy-type defects are annealed at 500–700 °C and 1200–1400 °C. From the analysis of... (Read more)
- 36. Mater. Sci. Eng. R 33, 135-207 (2001) , “Comprehensive characterization of hydride VPE grown GaN layers and templates”, H. MorkoçGaN community has recently recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this... (Read more)
- 37. Physica B 308, 816 (2001) , Elsevier Science , “Rhodium-related deep levels in n-type MOCVD GaAs ”, M. Zafar Iqbal, A. Majid, S. Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar and D. BimbergPreliminary results on the study of deep levels associated with 4d-transition metal, rhodium, in crystalline GaAs grown by metal-organic chemical vapour deposition (MOCVD) technique are reported for the first time. Deep level transient spectroscopy on n-type GaAs doped in situ with Rh during MOCVD growth reveals a broad majority carrier emission peak. The peak corresponds to a band of deep levels extending over the energy range 0.57–0.65 eV below the conduction band edge with lower-energy states having lower electron capture cross-sections. The deep levels show a pronounced dependence of electron emission rate on the junction electric field. Minority carrier (hole) emission spectra at zero bias show a pronounced Rh-related deep-level peak with a low-temperature shoulder. The dominant level in the lower half-gap is found to have a position Ev+0.44 eV, with a field-dependent emission rate signature. (Read more)
- 38. Physica B 308-310, 730 (2001) , “Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPR”, K. Irmscher, I. Pintilie, L. Pintilie and D. Schulz6H-SiC bulk single crystals grown by physical vapor transport (PVT) were investigated by deep-level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). One of the observed deep level defects was identified as isolated tungsten on Si sites by EPR. The electron spin of could be... (Read more)
- 39. Physica B 302-303, 249-256 (2001) , “Hydrogen-Enhanced Clusterization of Intrinsic Defects and Impurities in Silicon”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, M. F. Tamendarov and S. Zh. TokmoldinFormation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)
- 40. J. Appl. Phys. 88, 6265 (2000) , “Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam”, A. A. Lebedev, A. I. Veinger, D. V. Davydov, V. V. Kozlovski, N. S. Savkina, A. M. Strel?chukDeep centers in n-type 4H–SiC and 6H–SiC irradiated with 8 MeV protons have been investigated by capacitance spectroscopy and electron paramagnetic resonance (EPR). Samples were fabricated by sublimation epitaxy or commercially produced by CREE Inc. Research Triangle Park, NC. It is... (Read more)
- 41. J. Appl. Phys. 88, 1784-1787 (2000) , “Electron Spin Resonance Centers Associated with Oxygen Precipitates in Czochralski Silicon Crystals”, M. Koizuka, H. Yamada-Kaneta.We have previously concluded that the oxygen-precipitate-associated defects that we identified by the deep levels at Ev + 0.30 eV and Ec–0.25 eV were the Pb centers generated in the interface between the oxygen... (Read more)
- 42. Phys. Rev. B 62, 12888-12895 (2000) , “Tungsten in silicon carbide:?Band-gap states and their polytype dependence”, N. Achtziger, G. Pasold, R. Sielemann, C. H?lsen, J. Grillenberger, and W. WitthuhnBand-gap states of tungsten in silicon carbide (polytypes 4H, 6H, and 15R) are investigated by deep-level transient spectroscopy (DLTS) and admittance spectroscopy on n-type SiC. Doping with W is done by ion implantation and annealing. To establish a definite chemical identification of band-gap... (Read more)
- 43. phys. stat. sol. (b) 221, 625-631 (2000) , “Identification of the Gold-Lithium Defect L1 in Silicon with the Trigonal Centre Au2--(Li+)3 by Electrical, Optical and Magnetic Resonance Spectroscopy”, B. Langhanki, J. ?M. SpaethN-type silicon doped with gold and lithium was investigated by Electron Paramagnetic Resonance (EPR) and Deep Level Transient Spectroscopy (DLTS), using two sets of samples with different defect concentrations of both gold and lithium. Photoluminescence (PL) on both sets of samples allowed to... (Read more)
- 44. Jpn. J. Appl. Phys. 37, 1939-1944 (1999) , “Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs”, T. Shinagawa, T. OkumuraHydrogen-related metastable defects (M3/M4) in n-GaAs were studied in relation to the EL2 center. We found that the M3/M4 defects were observed only in the crystals containing the EL2 center in the as-grown state after exposure to a hydrogen plasma. The EL3 level, which was tentatively assigned as... (Read more)
- 45. Mater. Sci. Eng. B 58, 171-178 (1999) , “Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and S. Zh. TokmoldinRecent deep level transient spectroscopy (DLTS), electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy data on interactions of self-interstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was... (Read more)
- 46. Phys. Rev. B 59, 10823-10829 (1999) , “Defect energy levels in electron-irradiated and deuterium-implanted 6H silicon carbide”, M. O. Aboelfotoh, J. P. DoyleUsing deep-level transient spectroscopy, we studied defect energy levels and their annealing behavior in nitrogen-doped 6H-SiC epitaxial layers irradiated with 2-MeV electrons and implanted with 300-KeV deuterium or hydrogen at room temperature. Five levels located at Ec-0.34,... (Read more)
- 47. Physica B 273, 837 (1999) , Elsevier Science , “Deep levels associated with alpha irradiation of n-type MOCVD InP”, M. Zafar Iqbal, U. S. Qurashi, A. Majid, Aurangzeb Khan, Nasim Zafar, A. Dadgar, D. BimbergDeep level transient spectroscopy has been used to observe the effect of alpha particle irradiation on n-type InP grown by metal organic chemical vapour deposition (MOCVD). Eight majority carrier emitting levels Eα1, Eα2, …, Eα8 are found to be produced as a result of this irradiation. At least two of the observed levels (Eα2 and Eα4) are found to show interesting metastable behaviour. One important result of this work is complete absence of the well-known metastable M-level (observed in electron irradiated LEC InP) in our alpha-irradiated MOCVD material. (Read more)
- 48. Phys. Rev. B 58, R10119 (1998) , “Negative-U centers in 4H silicon carbide”, C. G. Hemmingsson, N. T. Son, A. Ellison, J. Zhang, E. Janz?nCharacterization of two negative-U centers in 4H SiC has been performed using various capacitance transient techniques. Each center gives rise to one acceptor level (-/0) and one donor level (0/+), where the electron ionization energy of the acceptor level is larger than that of the donor level. The... (Read more)
- 49. phys. stat. sol. (a) 168, 73 (1998) , “Self-Interstitials in Silicon Irradiated with Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii.The behavior of self-interstitials in silicon which was irradiated with light ions (protons and -particles) and electrons was explored by monitoring known impurity interstitial centers (Ci, Ali, (Si-O)i) with deep level transient spectroscopy (DLTS) and electron... (Read more)
- 50. J. Appl. Phys. 81, 6155 (1997) , “Deep level defects in electron-irradiated 4H SiC epitaxial layers”, C. Hemmingsson, N. T. Son, O. Kordina, J. P. Bergman, E. Janz?n, J. L. Lindstr?m, S. Savage, N. NordellDeep level defects in electron-irradiated 4H SiC epitaxial layers grown by chemical vapor deposition were studied using deep level transient spectroscopy. The measurements performed on electron-irradiated p+n junctions in the temperature range 100–750 K revealed... (Read more)
- 51. Phys. Rev. B 51, 16721 (1995) , “Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and Deep-Level Transient Spectroscopy”, V. Kveder, T. Sekiguchi, K. Sumino.Dislocation loops consisting of long and straight segments of 60? and screw parts were introduced in p-type Si by deformation under a high stress at a relatively low temperature. Electronic states associated with such dislocations were investigated by means of electric-dipole spin resonance, with... (Read more)
- 52. Proc. symp. on the degradation od electronic devices due to device operation as well as crystalline and process-induced defects 94-1, 221-234 (1994) , ECS (ISBN:1-56677-037-8) , “Spin dependent recombination in Si p-n junctions”, B. K. Meyer , P. Christmann , W. Stadler, H. Overhof, J.-M. Spaeth, S. Greulich-Weber, B. Stich
- 53. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 54. Semicond. Sci. Technol. 8, 1385-1392 (1993) , “Electrically detected electron paramagnetic resonance of a deep recombination centre in a silicon diode”, B. Stich , S. Gruelich-Weber , J.-M. Spaeth , H. Overhof
- 55. J. Appl. Phys. 72, 520-524 (1992) , “Deep levels of vanadium and vanadium-hydrogen complex in silicon”, T. Sadoh, H. Nakashima, and T. TsurushimaDeep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of EC−0.20 eV and... (Read more)
- 56. Mater. Sci. Forum 83-87, 1165-1170 (1992) , “Spin dependent recombination at deep centers in Si - electrically detected magnetic resonance”, P. Christmann , M. Bernauer , C. Wetzel , A. Asenov , B. K. Meyer , A. Endros
- 57. Appl. Phys. Lett. 59, 3165 (1991) , “Hydrogen diffusivities below room temperature in silicon evaluated from the photoinduced dissociation of hydrogen–carbon complexes”, Yoichi Kamiura, Minoru Yoneta, and Fumio HashimotoWe have evaluated hydrogen and deuterium diffusivities in silicon below room temperature (220–270 K) by analyzing the kinetics of photoinduced dissociation of a chemical etching introduced hydrogen (deuterium)–carbon complex. Under sufficiently strong illumination, the annihilation rate... (Read more)
- 58. J. Appl. Phys. 70, 5401-5403 (1991) , “Deep-level transient spectroscopy on p-type silicon crystals containing tungsten impurities”, Toshio Ando, Seiichi Isomae, and Chusuke MunakataTungsten deep levels are investigated to clarify energies, which are inconsistent among current research. Hole traps located at 0.41 eV above the top of the valence band are determined to be due to tungsten impurities. The concentration of hole traps is almost one-third of that of the tungsten... (Read more)
- 59. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbon?substitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon ??molecule??... (Read more)
- 60. Phys. Rev. B 42, 5759 (1990) , “EPR Identification of the Single-Acceptor State of Interstitial Carbon in Silicon”, L. W. Song and G. D. WatkinsAn EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the... (Read more)
- 61. Phys. Rev. B 38, 3395-3399 (1988) , “Electrical and Optical Properties of Defects in Silicon Introduced by High-Temperature Electron Irradiation”, Jian-Guo Xu, Fang Lu, and Heng-Hui Sun2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy Ec-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present... (Read more)
- 62. Phys. Rev. Lett. 60, 460 (1988) , “Bistable Defect in Silicon: The Interstitial-Carbon-Substitutional-Carbon Pair”, L. W. Song, X. D. Zhan, B. W. Benson, G. D. Watkins.By combining several spectroscopic techniques, we have observed a new type of bistable center in electron-irradiated silicon and have identified it as an interstitial-carbon?substitutional-carbon pair. The positive and negative charge states of the defect share a common stable configuration which... (Read more)
- 63. Phys. Rev. B 32, 7129 (1985) , “Electron-Nuclear Double Resonance of Titanium in Silicon: 29Si ENDOR”, D. A. van Wezep, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The Si-NL29 EPR spectrum, which is associated with the positive charge state of interstitial titanium in silicon, was investigated by electron-nuclear double resonance. Hyperfine-interaction parameters of 17 shells of silicon neighbors, comprised of 214 atoms, could be determined. These parameters... (Read more)
- 64. Phys. Rev. B 32, 6571 (1985) , “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon”, P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel.Energy levels of defect states introduced by plastic deformation of n-type silicon have been studied by capacitance transient spectroscopy. From the observed properties of the defects, it is concluded that two different types of defects are produced. The first type is interpreted as point defects... (Read more)
- 65. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 66. Appl. Phys. Lett. 43, 563-565 (1983) , “Characteristic electronic defects at the Si-SiO2 interface”, N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, P. J. CaplanOn unannealed, thermally oxidized silicon, electron spin resonance reveals an oriented interface defect which is termed the Pb center and identified as the trivalent silicon defect. Deep level transient spectroscopy (DLTS) reveals two broad characteristic peaks in the... (Read more)
- 67. phys. stat. sol. (a) 72, 701-713 (1982) , “On the Energy Spectrum of Dislocations in Silicon”, V. V. Kveder, Yu. A. Osipyan, W. Schrter, G. Zoth.Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized... (Read more)
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