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- 1. Phys. Rev. B 75, 075206 (2007) , “Isotope dependence of the vibrational lifetimes of light impurities in Si from first principles”, D. West and S. K. EstreicherThe vibrational lifetimes of a range of H-related defects and interstitial O (Oi) in Si, including isotopic substitutions, are calculated from first principles as a function of temperature. The theoretical approach is explained in detail. The vibrational lifetimes of... (Read more)
- 2. Phys. Rev. B 75, 075201 (2007) , “Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon”, O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte, and P. J. SimpsonWe present a detailed study of the comparative thermal evolutions of H- and D-related defects in silicon implanted with 2×1016 H or D/cm2, or coimplanted with 0.25×1016 He/cm2 and 0.7×1016 H/cm2, in both orders.... (Read more)
- 3. Appl. Phys. Lett. 89, 232111 (2006) , “Electron-beam-induced dissociation of B–D complexes in diamond”, J. Barjon, J. Chevallier, F. Jomard, C. Baron, and A. DeneuvilleThe diffusion of deuterium in boron-doped homoepitaxial diamond films leads to the passivation of boron acceptors via the formation of B–D complexes. In this letter, the stability of B–D pairs is investigated under the stress of a low-energy (10 keV) electron-beam irradiation at low... (Read more)
- 4. J. Appl. Phys. 99, 023702 (2006) , “Deep traps in oxide-nitride-oxide stacks fabricated from hydrogen and deuterium containing precursors”, G. Rosenman, M. Naich, Ya. Roizin, and Rob van SchaijkThe energy spectrum of the traps and thermal stability of stored charge have been studied by the thermostimulated exoelectron emission method in hydrogenated H and deuterated D oxide-nitride-oxide (ONO) multilayer stacks of silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memories. It is... (Read more)
- 5. Phys. Rev. B 74, 134418 (2006) , “Electron spin resonance and its implication on the maximum nuclear polarization of deuterated solid target materials”, J. Heckmann, W. Meyer, E. Radtke, G. Reicherz, and S. GoertzESR spectroscopy is an important tool in polarized solid target material research, since it allows us to study the paramagnetic centers, which are used for the dynamic nuclear polarization (DNP). The polarization behavior of the different target materials is strongly affected by the properties of... (Read more)
- 6. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
- 7. J. Appl. Phys. 94, 1 (2003) , “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”,We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metaloxidesemiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit... (Read more)
- 8. Physica B 302-303, 212-219 (2001) , “Magnetic resonance studies of shallow donor centers in hydrogenated Cz–Si crystals”, B. Langhanki, S. Greulich-Weber, J. ?M. Staeth, V. P. Markevich, L. I. Murin, T. Mchedlidze, M. Suezawa.A complex magnetic resonance study (EPR, electrically detected EPR, ENDOR) of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1–D3) were observed earlier by means of infrared absorption measurements in hydrogenated... (Read more)
- 9. Phys. Rev. B 61, 7448-7458 (2000) , “Hydrogen passivation of the selenium double donor in silicon:?A study by magnetic resonance”, P. T. Huy, C. A. J. Ammerlaan, T. Gregorkiewicz, D. T. Don.The passivation by hydrogen of selenium double donors in silicon has been investigated by magnetic resonance. Hydrogen was introduced by heat treatment at high temperatures in an atmosphere of water vapor. Two spectra were observed, labeled Si-NL60 and Si-NL61 for further reference, both showing... (Read more)
- 10. Phys. Rev. B 61, 4659-4666 (2000) , “Identification of the Oxygen-Vacancy Defect Containing a Single Hydrogen Atom in Crystalline Silicon”, P. Johannesen, B. Bech Nielsen, J. R. Byberg.Float-zone and Czochralski-grown silicon crystals have been implanted with protons or deuterons at ?50 K. Electron paramagnetic resonance measurements reveal a new signal in the spectrum of the Czochralski-grown (oxygen-rich) material. This signal is strongly temperature dependent, displaying a... (Read more)
- 11. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 12. Phys. Rev. Lett. 73, 3419 (1994) , “Non-Arrhenius Reorientation Kinetics for the B-H Complex in Si: Evidence for Thermally Assisted Tunneling”, Y. Michael Cheng and Michael StavolaThe B-H complex in Si can be aligned by stress and reorients with an activation energy of roughly 0.2 eV. We combine new measurements of the reorientation kinetics of the B-H complex made by the stress-induced dichroism technique with previous internal friction results to show that the reorientation... (Read more)
- 13. Appl. Phys. Lett. 56, 949 (1991) , “Evidence for the existence of a negatively charged hydrogen species in plasma-treated n-type Si”, A. J. Tavendale, S. J. Pearton, A. A. WilliamsWe demonstrate the drift of a donor-passivating hydrogen species under the action of the electric field in the depletion region of a reverse-biased Au/n-Si Schottky diode hydrogenated by exposure to a low-frequency discharge. The redistribution is explained by the unidirectional drift of a... (Read more)
- 14. Appl. Phys. Lett. 46, 882 (1985) , “Atomic deuterium passivation of boron acceptor levels in silicon crystals”, J. C. Mikkelsen, Jr.B-doped Si wafers were subjected to atomic-deuterium (D) plasmas to simulate the reactions of atomic hydrogen with substitutional B acceptor levels. Secondary ion mass spectrometry was used to profile the in- and out-diffusion of D, and spreading resistance was used to measure the distribution of... (Read more)
- 15. Appl. Phys. Lett. 46, 787 (1985) , “Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon”, N. M. Johnson and M. D. MoyerIt was recently proposed that hydrogen compensation of shallow-acceptor impurities in single-crystal silicon is due to the diffusion of both monatomic oxygen and hydrogen into silicon which combine at acceptor sites to form neutral acceptor-OH complexes. It is shown here that oxygen does not diffuse... (Read more)
- 16. Phys. Rev. B 31, 5525-5528 (1985) , “Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon”, N. M. JohnsonExperimental results are presented which identify the following chemical reaction as being responsible for compensation of shallow-acceptor impurities when single-crystal silicon is exposed to monatomic hydrogen: A-+h++H0↔(AH)0, where A-... (Read more)
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