The annealing of damage generated by low-energy ion implantation in polycrystalline silicon (poly-Si) and amorphous silicon (a-Si) is compared. The rate of heat release between implantation temperature and 350–500 °C for Si implanted in both materials and for different ions implanted in... (Read more)

We present a detailed study of the comparative thermal evolutions of H- and D-related defects in silicon implanted with 2×10¹⁶ H or D/cm², or coimplanted with 0.25×10¹⁶ He/cm² and 0.7×10¹⁶ H/cm², in both orders.... (Read more)

We report the production and characterization of a form of amorphous carbon with sp-sp² hybridization (atomic fraction of sp hybridized species 20%) where the predominant sp bonding appears to be (=C=C=)_n cumulene.... (Read more)

We have determined silicon self-diffusivity at temperatures 735–875 °C based on the Raman shift of longitudinal optical phonon frequencies of diffusion annealed ²⁸Si/³⁰Si isotope superlattices. The activation enthalpy of 3.6 eV is obtained in such low temperature... (Read more)

Raman spectroscopy was used to characterize the residual stress and defect density of AlN thin films reactively sputtered on silicon (100). The authors studied the correlation between the shift of the E₂ (high) phonon of AlN at 658 cm⁻¹ and the film biaxial stress... (Read more)

The effect of replacing H by D and C-12 by C-13 in the gas species used to grow different types of nanodiamond films on the Raman spectra of these films was studied. The modifications of the Raman spectra were investigated in submicron sized diamond films grown by hot filament chemical vapor... (Read more)

We have reported depth and in-plane profiling of strain, Ge composition, and defects in strained-Si/Si_1–xGe_x/Si heterostructures using micro-Raman imaging. Raman profiling in the depth direction was carried out with a depth resolution of ~15 nm using a... (Read more)

Micro-Raman spectroscopy and atomic force microscopy investigations have been applied on hydrogen implanted p-type Czochralski silicon samples to investigate the hydrogen related defects and their evolution after subsequent annealing. The thermal evolution of interstitial-hydrogen and... (Read more)

Raman spectra of (Mn, Co)-codoped ZnO films were investigated as functions of laser line and temperature. It is shown that the Raman shifts for different phonon modes exhibit redshift with temperature increasing, which can be attributed to the anharmonic effect in the material. Strong resonant Raman... (Read more)

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural... (Read more)

Raman measurements have been performed on ZnO bulk materials implanted with 220 keV Mn⁺ ions with various doses from 10¹⁵ to 10¹⁷ cm². The results reveal two modes at about 230 and 523 cm^–1, respectively, which are not observed in... (Read more)

Isolated interstitial H₂ and H₂ bound to interstitial oxygen (O–H₂) in single-crystalline Si are studied by Raman scattering. Two Raman signals at 3199(1) and 3193(1) cm⁻¹ (T0 K) are identified as ro-vibrational transitions of... (Read more)

We present characterization of the hyperfine interaction for the europium in hydrated europium chloride and as a dopant in yttrium orthosilicate. The Zeeman and pseudoquadrupole tensors were determined by measuring the hyperfine splittings while rotating the direction of a weak (~300 G) magnetic... (Read more)

We report on a first-principles investigation of the structural and vibrational properties of vitreous germania (v-GeO₂). Our work focuses on a periodic model structure of 168 atoms, but three smaller models are also studied for comparison. We first carry out a detailed structural... (Read more)

The EPR spectra of Fe3+ in high-quality thick freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with numerous lines of different intensities provided by three different defects is observed for these nearly stress-free iron-doped samples.... (Read more)

Polycrystalline Zn1 − xMnxO was synthesized by co-precipitation method with xvarying between 0.01 and 0.10. Although X-ray diffraction patterns show a typical würtzite structure with no additional peaks for all samples, Raman spectroscopy indicates the appearance of an additional mode in... (Read more)

We have observed the nagnetic resonance of conduction electrons in n-type indium antimonide, by the "heating" of the electron kinetic-energy temperature via the slsctron spins. This is the first direct evidence suggesting a contribution of spin-orbit coupling to relaxation in this system. In a steady-state spin-resonance experiment, a power P_S=(M₀=M_Z)H/T₁ is transferred to the systems(reservoirs) towards which the spins relax. Here, M₀ is the equilibrium magnetization, M_Z the component of the magnetization along the magnetic field H, and T1 the relaxation time. The reservoir of interest in our case is the kinetic energy of the eledtrons, and this is detected by an increase in the mobility μ. To our knowledge. this is the first observation of the power flow, due to relaxation, from the spins to a reservoir,applied to the ditection of magnetic resonance of conduction-electron spins. It differs in principle from usual spin-resonance observation methods, which are based on electromagnetic interactions of the spin system, such as the voltage induced in a resonator by the rotating magnetic moment, or again such as power absorption P_S=M_yH_x from the rotating field H_x by the out-of- phase component M_y.Besides providing information on the relaxation mechanism, the present method (that we call "ralaxation" method) should also in some cases by much more sensitive than the usual "electromagnetic" detection methods. (Read more)

In this paper, ZnO ultrafine particles (UFPs) were prepared by the thermal decomposition method of the precursor, zinc carbonate hydroxide. The structure and properties of the as-prepared ZnO UFPs were studied using TEM, XRD, BET, SPS, ESR, Raman, XPS and UV–Vis absorption spectroscopy. It... (Read more)

Intrinsic defect formation in amorphous (a-) SiO2 by ion implantation was examined with emphasis upon electronic excitation effects and chemical reaction effects. 10 MeV proton beam and boron beam irradiated silica platelets to examine electronic excitation effects and chemical reaction effects. In... (Read more)

Concentrations of defects in amorphous SiO₂ created by implantation of 10 MeV protons were examined. The depth profile of Si-Si bonds, E^? centers, or peroxy radicals (PORs) was close to that of electronic energy loss. Interstitial O₂ molecules were identified and... (Read more)

The deformation potentials and g values of the ground state of the boron acceptor in silicon have been determined from a study of the stress and Zeeman splitting of the electronic Raman scattering in this material. The stress splitting of the Raman line results from a twofold splitting of the... (Read more)