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- 1. Angew. Chem. Int. Ed. 47, (2008) , Wily , “Ag@AgCl: A Highly Efficient and Stable Photocatalyst Active under Visible Light”, PengWang, Baibiao Huang,* Xiaoyan Qin, Xiaoyang Zhang, Ying Dai, JiyongWei, and Myung-Hwan Whangbo
- 2. J.Am.Chem.Soc. 130, 48 (2008) , ACS , “Enhanced Ferromagnetism and Tunable Saturation Magnetization of Mn/C Codoped GaN Nanostructures Synthesized by Carbothermal Nitridation”, Zeyan Wang, Baibiao Huang, Lin Yu, Ying Dai, Peng Wang, Xiaoyan Qin, Xiaoyang Zhang, Jiyong Wei, Jie Zhan, Xiangyang Jing, Haixia Liu, and Myung-Hwan WhangboMn/C-codoped GaN nanostructures were synthesized by carbothermal nitridation with active charcoal as the carbon source. Nanostructures such as zigzag nanowires and nanoscrews were observed by varying the reaction time and the C/Ga molar ratio of the starting material used for the synthesis. The structures and morphologies of the as-grown samples were characterized by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy measurements. The doping of both Mn and C in the GaN matrix was confirmed by X-ray photoelectron spectroscopy measurements, and the ferromagnetic properties of Mn/C-codoped GaN samples were confirmed by room-temperature magnetization measurements. The saturation magnetization of Mn/C-codoped GaN increases steadily with increasing C/Ga molar ratio of the starting material at a rate of ~0.023 emu/g per C/Ga molar ratio, and the ferromagnetism of Mn/C-codoped GaN can be stronger than that of Mn-doped GaN by a factor of ~40. A plausible growth mechanism was proposed, and the role of carbon codoping in tuning the morphology and ferromagnetic property was discussed. Our work suggests that carbon doping in the GaN matrix favors the N sites over the Ga sites, Mn/C-codoping in the GaN matrix is energetically favorable, and the C-codoping strongly enhances the preference of the FM coupling to the AFM coupling between the two doped Mn sites. These suggestions were probed on the basis of first-principles density functional theory electronic structure calculations for a number of model doped structures constructed with a 32-atom 2 × 2 × 2 supercell. (Read more)
- 3. J. Appl. Phys. 102, 103514 (2007) , AIP , “Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies”, A. K. Mishra, S. K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha, and D. DasDefects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by photoluminescence (PL) and positron annihilation spectroscopy (PAS) techniques. The as-prepared sample was heat treated at different temperatures to obtain nanocrystals in the size range of 19–39 ... (Read more)
- 4. Phys. Rev. B 75, 195215 (2007) , “Effect of Co and O defects on the magnetism in Co-doped ZnO: Experiment and theory”, G. S. Chang, E. Z. Kurmaev, D. W. Boukhvalov, L. D. Finkelstein, S. Colis, T. M. Pedersen, A. Moewes, and A. DiniaThe electronic structure of Zn1−xCoxO (x=0.02, 0.06, and 0.10) diluted magnetic semiconductors is investigated using soft x-ray emission spectroscopy and first-principles calculations. X-ray absorption and emission measurements reveal that most Co... (Read more)
- 5. Phys. Rev. B 75, 144404 (2007) , “Ferromagnetism in Fe-doped ZnO nanocrystals: Experiment and theory”, Debjani Karmakar, S. K. Mandal, R. M. Kadam, P. L. Paulose, A. K. Rajarajan, T. K. Nath, A. K. Das, I. Dasgupta, and G. P. DasFe-doped ZnO nanocrystals are successfully synthesized and structurally characterized by using x-ray diffraction and transmission electron microscopy. Magnetization measurements on the same system reveal a ferromagnetic to paramagnetic transition temperature above 450 K with a low-temperature... (Read more)
- 6. Phys. Rev. B 75, 113201 (2007) , “Local structure around Mn atoms in Si crystals implanted with Mn+ studied using x-ray absorption spectroscopy techniques”, A. Wolska, K. Lawniczak-Jablonska, M. Klepka, M. S. Walczak, and A. MisiukThe local order around Mn atoms in the Mn-implanted Si samples, with ferromagnetic properties, has been investigated by use of x-ray-absorption spectroscopy techniques. Analysis of both extended x-ray-absorption fine structure and x-ray absorption near-edge structure spectra clearly indicates that... (Read more)
- 7. Phys. Rev. B 75, 085203 (2007) , “Structural and magnetic properties of Mn-implanted Si”, Shengqiang Zhou, K. Potzger, Gufei Zhang, A. Mücklich, F. Eichhorn, N. Schell, R. Grötzschel, B. Schmidt, W. Skorupa, M. Helm, J. Fassbender, and D. GeigerStructural and magnetic properties in Mn-implanted, p-type Si were investigated. High resolution structural analysis techniques such as synchrotron x-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as-implanted samples. Depending on the Mn fluence,... (Read more)
- 8. phys. stat. sol. (b) 244, 279 (2007) , Wiley InterScience , “High-pressure X-ray diffraction study of ternary and non-stoichiometric PbTe and PbSe crystals”, S.V. Ovsyannikov, V.V. Shchennikov, A.Y. Manakov, A.Y. Likhacheva, I.F. Berger, A.I. Ancharov, M.A. SheromovThe paper reports the pressure-induced phase transitions observed in ternary PbTe and PbSe compounds (Pb1-x Snx Te, Pb1-x Mnx Te, Pb1-x Snx Se) and non-stoichiometric PbTe ones... (Read more)
- 9. Appl. Phys. Lett. 89, 042503 (2006) , “Evidence for magnetism due to oxygen vacancies in Fe-doped HfO2 thin films”, Nguyen Hoa Hong, Nathalie Poirot, and Joe SakaiFe-doped HfO2 thin films are room temperature ferromagnetic. In comparison with results of the undoped HfO2 films, it seems that the Fe doping is not the main cause for the ferromagnetism but only acts as a catalyst. Experimental results of oxygen annealing and vacuum heat... (Read more)
- 10. Appl. Phys. Lett. 88, 224102 (2006) , “Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography”, D. R. Black, J. C. Woicik, M. Erdtmann, T. A. LangdoX-ray topographical images from thin (50 nm) strained-Si films grown on relaxed, planarized crystalline SiGe-on-Si (001) virtual substrates have been imaged by glancing-incidence monochromatic x-ray topography. This extremely asymmetric diffraction geometry, utilizing (311) diffraction planes, can... (Read more)
- 11. J. Appl. Phys. 100, 023512 (2006) , “Stacking faults and twin boundaries in fcc crystals determined by x-ray diffraction profile analysis”, Levente Balogh, Gábor Ribárik, and Tamás UngárA systematic procedure is developed to evaluate the density of planar defects together with dislocations and crystallite or subgrain size by x-ray line profile analysis in fcc crystals. Powder diffraction patterns are numerically calculated by using the DIFFAX software for intrinsic and extrinsic... (Read more)
- 12. J. Appl. Phys. 99, 113507 (2006) , “Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon”, D. Babonneau, M.-F. Beaufort, A. Declémy, J.-F. Barbot, and J.-P. SimonThe formation and growth of defects, including nanocavities and extended interstitial-type defects, created by helium implantation in silicon (50 keV, 7.1015 cm–2) in the temperature range of 100–550 °C has been investigated by grazing incidence small-angle... (Read more)
- 13. J. Appl. Phys. 99, 104906 (2006) , “An x-ray topographic study of diamond anvils: Correlation between defects and helium diffusion”, Agnès Dewaele, Paul Loubeyre, and Ramesh AndréX-ray topographic images of several dozens of diamonds have been recorded before and after their use as anvils in a diamond anvil high pressure cell. The aim of this study is to better understand and prevent the breakage of diamond anvils when they are used in contact with a helium sample. Indeed,... (Read more)
- 14. J. Appl. Phys. 99, 103509 (2006) , “X-ray scattering study of hydrogen implantation in silicon”, Nicolas Sousbie, Luciana Capello, Joël Eymery, François Rieutord, and Chrystelle LagaheThe effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile from the scattering data is described. A... (Read more)
- 15. J. Appl. Phys. 99, 043509 (2006) , “Influence of metal trapping on the shape of cavities induced by high energy He+ implantation”, R. El Bouayadi, G. Regula, M. Lancin, B. Pichaud, and M. DesvignesIn He implantation induced cavities highly contaminated with metals (Au, Ni, Pt) we found that, when no three-dimensional structure is observed, the shape of the cavities can be strongly modified depending on the nature of the metal and on its trapped quantity. The equilibrium shape of cavities is... (Read more)
- 16. J. Appl. Phys. 99, 011101 (2006) , “Degradation of hexagonal silicon-carbide-based bipolar devices”, M. Skowronski and S. HaOnly a few years ago, an account of degradation of silicon carbide high-voltage p-i-n diodes was presented at the European Conference on Silicon Carbide and Related Compounds (Kloster Banz, Germany, 2000). This report was followed by the intense effort of multiple groups... (Read more)
- 17. Mater. Sci. Eng. B 126, 222-225 (2006) , “Magnetic properties of a new spintronic material—GaN:Fe”, H. Przybylińska, A. Wolos, M. Kiecana, M. Sawicki, T. Dietl, H. Malissa, C. Simbrunner, M. Wegscheider, H. Sitter, K. Rumpf, P. Granitzer, H. Krenn and W. JantschWe report on metal-organic chemical vapour deposition growth of GaN:Fe and its characterization by means of high-resolution X-ray diffraction, secondary ion mass spectroscopy, electron spin resonance, and magnetization measurements. Electron spin resonance studies demonstrate the existence of Fe in... (Read more)
- 18. Phys. Rev. B 74, 245205 (2006) , “Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence”, V. Holý, Z. Matj, O. Pacherová, V. Novák, M. Cukr, K. Olejník, and T. JungwirthA combination of high-resolution x-ray diffraction and a technique of x-ray standing-wave fluorescence at grazing incidence is employed to study the structure of a (Ga,Mn)As-diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a... (Read more)
- 19. Phys. Rev. B 74, 235213 (2006) , “Mn 3d electronic configurations in (Ga1−xMnx)As ferromagnetic semiconductors and their influence on magnetic ordering”, F. Kronast, R. Ovsyannikov, A. Vollmer, H. A. Dürr, W. Eberhardt, P. Imperia, D. Schmitz, G. M. Schott, C. Ruester, C. Gould, G. Schmidt, K. Brunner, M. Sawicki, and L. W. MolenkampWe applied x-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD) at the Mn 2p-3d resonances to study the Mn 3d electronic configuration and the coupling of Mn 3d magnetic moments in various Ga1−xMnxAs films.... (Read more)
- 20. Phys. Rev. B 74, 205428 (2006) , “Er site in Er-implanted Si nanoclusters embedded in SiO2”, C. Maurizio, F. Iacona, F. D'Acapito, G. Franzò, and F. PrioloWe have investigated by extended x-ray absorption fine structure spectroscopy the local order around Er atoms introduced by ion implantation in substoichiometric silica films prepared by plasma enhanced chemical vapor deposition, where Si nanoclusters have been formed by different preimplantation... (Read more)
- 21. Phys. Rev. B 74, 140502(R) (2006) , “Lattice parameters and thermal expansion of superconducting boron-doped diamonds”, V. V. Brazhkin, E. A. Ekimov, A. G. Lyapin, S. V. Popova, A. V. Rakhmanina, S. M. Stishov, V. M. Lebedev, Y. Katayama, and K. KatoUsing two different high-pressure techniques, we have prepared boron-doped diamonds with atomic concentration of the dopant ranging from 0.04% to 4% (from 7×1019 to 7×1021 atom/cm3) and studied the lattice constants and thermal expansion of the diamonds... (Read more)
- 22. Thin Solid Films 496, 169-173 (2006) , “Green luminescence from Mn ions in ZnO–GeO2 glasses prepared by sol–gel method and their glass ceramics”, Tomoe Sanada, Kazuhiro Yamamoto, Noriyuki Wada , Kazuo KojimaZn2SiO4:Mn2+ is one of the green light luminants used for cathode ray tubes of televisions. Recently, optical materials emitting strong visible light under lower energy excitation have been expected. To obtain new luminants of high quality, we prepared Mn ion doped ZnO–GeO2 glasses and glass... (Read more)
- 23. Chem. Phys. Lett. 415, 337 (2005) , “No ferromagnetism in Mn doped ZnO semiconductors”, J. Alaria, P. Turek, M. Bernard, M. Bouloudenine, A. Berbadj, N. Brihi, G. Schmerber, S. Colis , A. DiniaPolycrystalline Zn1 − xMnxO was synthesized by co-precipitation method with xvarying between 0.01 and 0.10. Although X-ray diffraction patterns show a typical würtzite structure with no additional peaks for all samples, Raman spectroscopy indicates the appearance of an additional mode in... (Read more)
- 24. J. Magn. Magn. Mater. 302, 118 (2005) , “Magnetism origin of Mn-doped ZnO nanoclusters”, J.H. Li, D.Z. Shen, J.Y. Zhang, D.X. Zhao, B.S. Li, Y.M. Lu, Y.C. Liu , X.W. FanZnMnO nanoclusters were synthesized by the sol–gel method. The structural and magnetic characters were investigated. The XRD spectrum shows ZnMnO nanoclusters are hexagonal wurtzite structures and a small quantity of ZnMn2O4 phase is also present in the spectrum. The percentages of Zn and Mn... (Read more)
- 25. Mater. Sci. Eng. C 25, 614-617 (2005) , “Incorporation of cobalt into ZnO nanoclusters”, Igor Ozerov, Françoise Chabre and Wladimir MarineThe structural, optical and magnetic properties of nanostructured ZnO films co-doped with cobalt and aluminium have been studied. The nanocrystalline films, with cluster sizes in range 50–100 nm, were deposited by pulsed laser ablation in a mixed atmosphere of oxygen and helium. The... (Read more)
- 26. Superlatt. Microstruct. 38, 413-420 (2005) , “EPR study on magnetic Zn1−xMnxO”, Mariana Diaconu, Heidemarie Schmidt, Andreas P?ppl, Rolf B?ttcher, Joachim Hoentsch, Andreas Rahm, Holger Hochmuth, Michael Lorenz ,Marius GrundmannDiluted magnetic semiconductors (DMS), systems formed by replacing cations of the host semiconductor material with transition-metal ions, are developed for further use in spintronics. A good combination as a DMS is Zn1−xMnxO due to the ZnO wide band gap (3.37 eV) and the matching ionic... (Read more)
- 27. Appl. Phys. Lett. 85, 1601 (2004) , “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods”, D. Li, Y. H. Leung, A. B. Djurisic, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, W. K. ChanWe prepared ZnO nanostructures using chemical and thermal evaporation methods. The properties of the fabricated nanostructures were studied using scanning electron microscopy, x-ray diffraction, photoluminescence, and electron paramagnetic resonance (EPR) spectroscopy. It was found that the... (Read more)
- 28. Appl. Phys. Lett. 84, 2635 (2004) , “Visible photoluminescence in ZnO tetrapod and multipod structures”, Aleksandra B. Djurisic, Yu Hang Leung, Wallace C. H. Choy, Kok Wai Cheah, Wai Kin ChanThe properties of ZnO tetrapod and multipod structures were investigated using scanning electron microscopy, x-ray diffraction, photoluminescence (PL), and electron paramagnetic resonance (EPR) spectroscopy. While there is relationship between g = 1.96 EPR and green PL in some of the samples,... (Read more)
- 29. J. Cryst. Growth 264, 1-6 (2004) , “Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film”, Y. J. Park , C. S. Oh , T. H. Yeom, Y. M. YuWe have observed the nagnetic resonance of conduction electrons in n-type indium antimonide, by the "heating" of the electron kinetic-energy temperature via the slsctron spins. This is the first direct evidence suggesting a contribution of spin-orbit coupling to relaxation in this system. In a steady-state spin-resonance experiment, a power PS=(M0=MZ)H/T1 is transferred to the systems(reservoirs) towards which the spins relax. Here, M0 is the equilibrium magnetization, MZ the component of the magnetization along the magnetic field H, and T1 the relaxation time. The reservoir of interest in our case is the kinetic energy of the eledtrons, and this is detected by an increase in the mobility μ. To our knowledge. this is the first observation of the power flow, due to relaxation, from the spins to a reservoir,applied to the ditection of magnetic resonance of conduction-electron spins. It differs in principle from usual spin-resonance observation methods, which are based on electromagnetic interactions of the spin system, such as the voltage induced in a resonator by the rotating magnetic moment, or again such as power absorption PS=MyHx from the rotating field Hx by the out-of- phase component My.Besides providing information on the relaxation mechanism, the present method (that we call "ralaxation" method) should also in some cases by much more sensitive than the usual "electromagnetic" detection methods. (Read more)
- 30. J. Phys. Chem. Solids 65, 639-645 (2004) , “Carbothermally-assisted aerosol synthesis of semiconducting materials in the system GaN/Mn”, Jerzy F. Janik , Mariusz Dryga , Cezary Czosnek , Maria Kamiska , Maria Palczewska and Robert T. PaineAerosol-assisted vapor phase synthesis aimed at preparation of magnetic semiconductor nanopowders of Ga1−xMnxN is carried out both from aqueous and methanol solution mixtures of gallium nitrate and manganese (II) nitrate. After an additional pyrolysis at 1000 °C under an ammonia flow,... (Read more)
- 31. Mater. Sci. Eng. A 375-377, 620-624 (2004) , “Evolution of the microstructure of disperse ZnO powders obtained by the freeze-drying method”, Z. V. Marinkovic, O. Milosevic, M. V. Nikolic, M. G. Kakazey, M. V. Karpec, T. V. Tomila , M. M. RisticFreeze-drying, as a cryochemical powder processing method is applied in the synthesis of ZnO submicrometer to nanosized powders. The process involves rapid freezing of the sprayed precursor solution, drying under vacuum by sublimation of the solvent and salt decomposition to oxide by thermal... (Read more)
- 32. Nature 430, 1009 (2004) , “Ultrahigh-quality silicon carbide single crystals”, Daisuke Nakamura, Itaru Gunjishima, Satoshi Yamaguchi, Tadashi Ito, Atsuto Okamoto, Hiroyuki Kondo, Shoichi Onda, Kazumasa TakatoriSilicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices1,2. Careful consideration of the thermal conditions3-6 in which SiC {0001} is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes)7-9, inclusions, small-angle boundaries and longrange lattice warp has been reduced10,11. But some macroscopic defects (about 1–10 cm-2) and a large density of elementary dislocations (,104 cm-2), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12–16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth)17, to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems. (Read more)
- 33. J. Appl. Phys. 93, 9697-9702 (2003) , “Growth and characterization of GaN:Mn epitaxial films”, T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, L. G?rgens, J. B. Philipp, O. AmbacherThe oxidation states of Mn in epitaxial GaN films grown by plasma induced molecular beam epitaxy were investigated by electron spin resonance (ESR), elastic recoil detection, superconducting quantum interference device magnetization, and photothermal deflection spectroscopy measurements. Comparison... (Read more)
- 34. J. Phys. Chem. Solids 64, 1027-1035 (2003) , “Optical absorption and fluorescence properties of Er3+ ion in MO–WO3–P2O5 glasses”, P. Subbalakshmi , N. VeeraiahTungsten phosphate glasses mixed with the three different modifier oxides, viz. PbO, ZnO and CaO doped with Er2O3 were prepared. The glasses were characterised by X-ray diffraction spectra, electron microscopy and differential thermal analysis. Optical absorption and photoluminescence spectra of... (Read more)
- 35. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 36. J. Appl. Phys. 92, 889-894 (2002) , “Ramification of micropipes in SiC crystals”, M. Yu. Gutkin, A. G. Sheinerman, T. S. Argunova, J. H. Je, H. S. Kang, Y. Hwu, W.-L. TsaiThe ramification of micropipes is observed using scanning electron microscopy, optical microscopy, and synchrotron x-ray radiography. The conditions for the ramification of dislocated micropipes are determined theoretically within a model when the angles between dislocation lines are small. It is... (Read more)
- 37. Mater. Sci. Eng. A 332, 356-361 (2002) , “The preparation and characterization of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Jing Shang, Xiaojun Sun, Weimin Cai and Haichen GuoIn this paper, ZnO ultrafine particles (UFPs) were prepared by the thermal decomposition method of the precursor, zinc carbonate hydroxide. The structure and properties of the as-prepared ZnO UFPs were studied using TEM, XRD, BET, SPS, ESR, Raman, XPS and UV–Vis absorption spectroscopy. It... (Read more)
- 38. Appl. Surf. Sci. 180, 308-314 (2001) , “The surface properties and photocatalytic activities of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Xiaojun Sun, Jing Shang and Weimin CaiWe prepared ZnO ultrafine particles (UFPs) by thermal decomposition of the precursor zinc carbonate hydroxide. The surface properties of the as-prepared particles were studied using TEM, XRD, BET, SPS, EPR, IR, and XPS. The surface contains active species such as oxygen deficiencies and hydroxyl... (Read more)
- 39. J. Appl. Phys. 89, 4625-4630 (2001) , “Hexagonal voids and the formation of micropipes during SiC sublimation growth”, Thomas A. Kuhr, Edward K. Sanchez, Marek Skowronski, William M. Vetter, Michael DudleyHexagonal voids observed in sublimation grown SiC boules were examined using optical microscopy, atomic force microscopy (AFM), scanning electron microscopy, KOH etching, and synchrotron white-beam x-ray topography. Voids formed at imperfections in the attachment layer between the seed and crucible... (Read more)
- 40. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
- 41. J. Appl. Phys. 88, 1407 (2000) , “Structural improvement in sublimation epitaxy of 4H–SiC”, M. Syväjärvi, R. Yakimova, H. Jacobsson, and E. JanzénThe sublimation epitaxy growth process has been studied. The structural quality of the grown layers improves compared with the substrate mainly due to a diminished domain structure misorientation. Optical microscopy shows that the as-grown surfaces are free of typical defects appearing in silicon... (Read more)
- 42. Appl. Catalysis A 178, 167-176 (1999) , “Reactivity for isomerization of 1-butene on the mixed MoO3–ZnO oxide catalyst”, Kentaro Nakamura, Kazuo Eda, Sadao Hasegawa , Noriyuki SotaniThe mixed MoO3–ZnO catalyst was expected to reveal the new function as a catalyst. The catalyst was characterized by XRD, ESR, XANES and so on. We found that the MoO3–ZnO catalyst was effective for isomerization and metathesis of 1-butene. The defects with the anion vacancy were formed... (Read more)
- 43. Appl. Surf. Sci. 147, 85-93 (1999) , “Influence of trivalent metal ions on the surface structure of a copper-based catalyst for methanol synthesis”, Hong-Bo Chen, Dai-Wei Liao, La-Jia Yu, Yi-Ji Lin, Jun Yi, Hong-Bin Zhang and Khi-Rui TsaiThe method of doping trivalent metal ions into a copper-based catalyst for methanol synthesis is effective in modifying the surface structure of the catalyst. The promotion effect and its relation to catalytic activity for hydrogenation of CO to methanol after doping with trivalent metal ions such... (Read more)
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