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- 1. Phys. Rev. B 74, 134102 (2006) , “Phosphorous–oxygen hole centers in phosphosilicate glass films”, M. Fanciulli, E. Bonera, S. Nokhrin, and G. PacchioniPhosphosilicate glass films produced by subatmospheric pressure chemical vapor deposition with different phosphorus concentrations have been investigated by ultraviolet Raman spectroscopy and electron paramagnetic resonance (EPR) spectroscopy. The behavior and the attribution of the main Raman band... (Read more)
- 2. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
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Updated at 2010-07-20 16:50:39
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