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- 1. Phys. Rev. B 77, 085120 (2008) , “Identification of the carbon antisite in SiC: EPR of 13C enriched crystals”, Pavel G. Baranov, Ivan V. Ilyin, Alexandra A. Soltamova, and Eugene N. MokhovAn electron paramagnetic resonance spectrum with axial symmetry along c axis, spin S=1/2 and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed 6H-SiC, 13C isotope enriched. The 13C concentration was... (Read more)
- 2. Phys. Rev. Lett. 98, 227401 (2007) , “Formation of Hydrogen Impurity States in Silicon and Insulators at Low Implantation Energies”, T. Prokscha, E. Morenzoni, D. G. Eshchenko, N. Garifianov, H. Glückler, R. Khasanov, H. Luetkens, and A. SuterThe formation of hydrogenlike muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz, and sapphire. By varying the initial energy of positive muons... (Read more)
- 3. J. Appl. Phys. 99, 093706 (2006) , “Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon”, Mara Bruzzi, David Menichelli, Monica Scaringella, Jaakko Härkönen, Esa Tuovinen, and Zheng LiA quantitative study about the thermal activation of oxygen related thermal donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal donor formation has been performed through isothermal annealing at 430 °C up to a total time of 120 min. Space charge... (Read more)
- 4. Phys. Rev. Lett. 92, 175504 (2004) , “Driving Force of Stacking-Fault Formation in SiC p–i–n Diodes”, S. Ha, M. Skowronski, J. J. Sumakeris, M. J. Paisley, M. K. DasThe driving force of stacking-fault expansion in SiC pin diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the... (Read more)
- 5. Physica B 302-303, 249-256 (2001) , “Hydrogen-Enhanced Clusterization of Intrinsic Defects and Impurities in Silicon”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, M. F. Tamendarov and S. Zh. TokmoldinFormation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)
- 6. Mater. Sci. Eng. B 71, 249 (2000) , “New (S=1) EPR AA17 center in silicon — microplatelets or precursor of platelets?”, Yu. V. Gorelkinskii, Kh. A. Abdullin, B. N. Mukashev.New (S=1) EPR spectrum (labeled Si-AA17) is observed in irradiated high-purity hydrogen-contained silicon after annealing at ≥200°C. The AA17 defect has D3d symmetry with g=2.0028, g=2.0106; A(29Si)=175.0 MHz, A=89.0 MHz; and D=±33.6 MHz, D=±16.8 MHz. It is paramagnetic in a... (Read more)
- 7. Appl. Phys. Lett. 70, 1137 (1997) , “In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon”, Satoshi Yamasaki, Takahide Umeda, Junichi Isoya, and Kazunobu TanakaIn situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the... (Read more)
- 8. J. Appl. Phys. 35, 379-397 (1964) , “Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide”, R. N. Hall and J. H. RacetteThe solubilities of substitutional and interstitial copper (Cus and Cui) have been measured in intrinsic and extrinsic n- and p-type Ge, Si, and GaAs, using Cu64. These measurements show that Cus is a triple acceptor in... (Read more)
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Updated at 2010-07-20 16:50:39
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