Structural and resistance switching properties were investigated in the CoO resistance random access memory (RRAM) with the Ta electrode. The intermediate layer consisting of Co and Ta oxides was confirmed at the interface by the transmission electron microscopy and electron energy loss... (Read more)

We utilize a very sensitive electron spin resonance technique called spin-dependent tunneling to identify defect centers involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors. The defect's ²⁹Si hyperfine... (Read more)

Through a combined application of two characterization methods, deep-level transient spectroscopy and lifetime spectroscopy, the lifetime-limiting defect level in intentionally aluminum-contaminated Czochralski silicon has been analyzed and a complete set of defect parameters could be obtained. This... (Read more)

The authors combine metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO₂ pMOS field effect... (Read more)

The impact of a submonolayer of HfO₂ sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline... (Read more)

First-principles calculations based on density functional theory are used to elucidate the effect of O vacancies, forming F centers, on spin-dependent tunneling in Fe/MgO/Fe(001) magnetic tunnel junctions. O vacancies produce occupied localized s states and unoccupied resonant p... (Read more)

We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO₃ films epitaxially grown on TiO₂-terminated SrTiO₃(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures... (Read more)

We report the production and characterization of a form of amorphous carbon with sp-sp² hybridization (atomic fraction of sp hybridized species 20%) where the predominant sp bonding appears to be (=C=C=)_n cumulene.... (Read more)

The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and... (Read more)

A random telegraph signal appears at a smaller absolute gate bias for a larger absolute drain-source bias in a carbon nanotube transistor. Its mechanism is attributed to a defect located in the drain side of the Schottky barrier carbon nanotube transistor with Ti/Au as contact material. Furthermore,... (Read more)

Measurement of dissolved chromium concentration in p-type crystalline silicon by means of the change in carrier lifetime due to chromium-boron pair dissociation requires precise knowledge of the recombination parameters of dissolved chromium in silicon. This work, based on quasi-steady-state... (Read more)

Aluminum oxide (Al₂O₃) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO₂) intermediate layer. By means of capacitance-voltage and thermal dielectric relaxation current measurements, the interface... (Read more)

By direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in HfO₂/GeO_x stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and... (Read more)

Al₂O₃ thin films were deposited by atomic layer deposition on HF-cleaned and NH₃ plasma-treated GaAs surfaces, respectively. The precursors used for Al₂O₃ films are trimethylaluminum and water. Effects of NH₃ plasma pretreatment on... (Read more)

Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency... (Read more)

The low field Hall mobility of electron in diamond was investigated from room temperature to 873 K, both experimentally and theoretically. The acoustic deformation potential for electron scattering is determined by fitting of theoretical calculations to experimental data for high quality {111}... (Read more)

HfO₂ films were grown by atomic layer deposition using two different precursor chemistries—HfCl₄ and tetrakis(diethylamido)hafnium (TDEAH) with H₂O as the oxidant. Electrical measurements on capacitor structures fabricated using the films showed a 0.4 V... (Read more)

The authors demonstrate that the electric conductivities of cubic and hexagonal boron nitride (c-BN and h-BN) thin films increased markedly by the in situ doping of zinc. The doped films were electrically semiconducting, and conductivities at room temperature increased from... (Read more)

Recombination centers in thin asymmetrical p-n junctions were analyzed in the context of capacitance transient experiments. The combined effect of the thin low-doped region of the junction and the nonzero value of the occupation factor of the recombination center in the depletion layer... (Read more)

The effects of HfSiO nitridation on charge trapping and long-term dielectric reliability are investigated. A comparison between decoupled plasma nitridation, annealing in NH₃, and no nitridation is made. It was found that thinner HfSiO layers show less trapped charge. Decoupled plasma... (Read more)

Low pressure chemical vapor deposition of Si₃N₄ on oxidized Si (111) surfaces causes a change in the properties of the dominant interface defect, the P_b center, observed by electron paramagnetic resonance. The change in the signature of the... (Read more)

The authors modified the charge decay model of silicon-oxide-nitride-oxide-silicon-type memory at the temperatures above 150 °C. The modified model includes the effect of the internal electric field induced by the charges trapped in silicon nitride layer. The authors extracted the trap density... (Read more)

The current-voltage characteristics with acceptor segregation at grain boundaries have been investigated in H₂-sintered SrTiO₃. Al-added SrTiO₃ was sintered in H₂ and then annealed in air for selective oxidation of grain boundaries. The samples showed... (Read more)

We have investigated by deep level transient spectroscopy the hole and electron trap defects introduced in n-type Ge during electron beam deposition (EBD) of Pd Schottky contacts. We have also compared the properties of these defects with those introduced in the same material during... (Read more)

A two-dimensional dislocation network artificially embedded in a silicon-on-insulator (SOI) layer was examined as the source of lattice strain to generate a periodic potential. A screw dislocation network with the period of 20 nm was formed in an SOI layer using a twist bonding of two SOI wafers.... (Read more)

We investigate theoretically light- and bias-induced metastabilities in Cu(In,Ga)Se₂ (CIGS) based solar cells, suggesting the Se–Cu divacancy complex (V_Se-V_Cu) as the source of this hitherto puzzling phenomena. Due to its amphoteric nature, the... (Read more)

Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at... (Read more)

The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN(0001) pseudosubstrates is reported. The microstructure and the electron transport in InN(0001) films of varying thickness were analyzed by transmission electron microscopy... (Read more)

The influence of Hf-based dielectrics on the underlying SiO₂ interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)

A major challenge for replacing gate SiON with HfO₂ is the instability and reliability of HfO₂. Unlike the SiON, there can be substantial amount of as-grown electron traps in HfO₂. These traps can cause instability in the threshold voltage and contribute to the... (Read more)

The dislocation dependence of open circuit voltage is studied based on Donolato's model for the effect of dislocations on minority carrier effective diffusion length [J. Appl. Phys. 84, 2656 (1998)]. Experimental data measured on thin-film solar cells show a strong decrease of open circuit... (Read more)

The results of resistivity measurements on p-type CuGaSe₂ films are presented and analyzed within the framework of different hopping conductivity models. Both the Mott [N. Mott and E. A. Davies, Electron Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979); N. F.... (Read more)

A rigorous method of obtaining the Cu diffusivities in various SiO₂-based dielectric materials is proposed. The diffusion profile of Cu ions in a dielectric material is first simulated and the resulting flatband voltage shift (V_FB) is compared with the experimental... (Read more)

Temperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique... (Read more)

The effects of postgrowth rapid thermal annealing on the electronic states in a relatively long wavelength (~1.3 µm), self-assembled InAs/GaAs quantum-dot structure are investigated. We combine optical and electrical experiments, i.e., photoluminescence (PL) and deep-level transient... (Read more)

LaCuOSe is a wide band gap p-type semiconductor in which high density positive holes can be doped to exhibit degenerate conduction. These features should allow room-temperature ferromagnetism in a dilute magnetic semiconductor (DMS), which follows a theoretical prediction [T. Dietl et al.,... (Read more)

The impact of threading dislocation density on Ni/n-GaN Schottky barrier diode characteristics is investigated using forward biased current-voltage-temperature (I-V-T) and internal photoemission (IPE) measurements. Nominally, identical metal-organic chemical vapor... (Read more)

In this paper, the formation and evolution of defects induced by ion irradiation with 1 MeV Si⁺ ions in Ni₂Si/4H–SiC Schottky diodes were studied and correlated with the electrical properties of the contacts. The current-voltage characteristics of the contacts... (Read more)

Only a few years ago, an account of degradation of silicon carbide high-voltage p-i-n diodes was presented at the European Conference on Silicon Carbide and Related Compounds (Kloster Banz, Germany, 2000). This report was followed by the intense effort of multiple groups... (Read more)

Both lowering the “reset” current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. These requirements have been satisfied by using a hetero junction structure consisting of transition metal oxides, NiO_y/TiO_x/Pt, combining direct contact with the NiO_y using a W-probe. It is considered that this configuration brought about extreme downsizing of the effective area of both the top and bottom electrodes for NiO_y and thus decreased the number of filaments formed in “forming” process. Reducing the number of filaments is essential to these issues. (Read more)

An overview of the evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a physical model is proposed which could be used to more accurately predict the transistor degradation. Finally, based on our new present understanding, a new characterization methodology is proposed, which would open the way to a more accurate determination of parameter shifts and thus allowing implementing the degradation into design rules. (Read more)

The density (N_A) and energy level (E_A) of an acceptor in a p-type wide-band-gap semiconductor (e.g., SiC, GaN, and diamond) are determined by a least-squares fit of the charge neutrality equation to the temperature dependence of the hole... (Read more)

The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10–700 K for nitrogen concentrations between 3.5×10¹⁵ and 5×10¹⁹ cm⁻³. For the highest doped samples, a good agreement is found between the... (Read more)

We investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conductivity of ultrananocrystalline diamond films by several orders of magnitude. We show that films produced at low... (Read more)

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. We focus on transistors with phosphorus donor concentrations higher than those previously studied, where we expect conduction to rely on donor... (Read more)

Photocapacitance and excitation photocapacitance methods were applied to reveal the dislocation-induced deep levels in coalescent epitaxial lateral overgrowth layers of InP. Point-contact Schottky barrier junctions with small junction areas were formed on dislocated and dislocation-free regions by... (Read more)

Two-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport of such quasi-one-dimensional systems with and without a perpendicular magnetic field was characterized at cryogenic... (Read more)

A statistical thermodynamic approach to analyze defect thermodynamics in strongly nonideal solid solutions was proposed and validated by a case study focused on the oxygen intercalation processes in mixed-conducting LaGa_0.65Mg_0.15Ni_0.20O_3–δ... (Read more)

High-quality single crystals of ZnO in the as-grown and N⁺ ion-implanted states have been investigated using a combination of three experimental techniques—namely, positron lifetime/slow positron implantation spectroscopy accompanied by theoretical calculations of the positron... (Read more)

We have adopted the transient-current technique as a sensitive method to detect small concentrations of charged defects in diamond and to study its photoionization spectrum. It is found that ionized impurity concentrations in the interval 10⁹–10¹³ cm^–3 can... (Read more)

Resistively detected nuclear magnetic resonance (NMR) measurements on 2D electron systems near the =1 quantum Hall state are reported. In contrast to recent results of Gervais et al. [Phys. Rev. Lett. 94, 196803 (2005)], a dispersive line shape is found at all radio-frequency powers studied... (Read more)

An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to... (Read more)

We resolve the remarkably sharp bound exciton transitions of highly enriched ²⁸Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the ³¹P donor reflect the hyperfine... (Read more)

We utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors.... (Read more)

The electrical behavior of high-permittivity (high-k) hafnium titanium silicate (Hf_xTi_ySi_zO) layers with different Hf:Ti ratios in the films is investigated. The films were deposited by metal-organic chemical-vapor deposition using a... (Read more)

Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction–diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (Read more)

Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D₂-annealing instead of the usual H₂-annealing. Interfacial Si dangling bonds (P_b1 and P_b0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to P_b depassivation. Plasma nitridation was also found to increase the P_b1/P_b0 density ratio, modify the P_b1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)

N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one... (Read more)

Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the P_b1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the P_b0 center proved to be unchanged. We observed that the shifted P_b1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original P_b1 structure. Angular variations of the shifted P_b1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the P_b1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)

The properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported. The 300 K sheet resistivity of the films was 2×10¹⁰ /square with an activation energy of the dark conductivity of 0.5 eV. The Fermi level is also pinned at... (Read more)

Silicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices^1,2. Careful consideration of the thermal conditions^3-6 in which SiC {0001} is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes)^7-9, inclusions, small-angle boundaries and longrange lattice warp has been reduced^10,11. But some macroscopic defects (about 1–10 cm^-2) and a large density of elementary dislocations (,10⁴ cm^-2), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12–16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth)¹⁷, to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems. (Read more)

The driving force of stacking-fault expansion in SiC p–i–n diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the... (Read more)

The mechanism of hydrogen release from the anode Si/SiO₂ interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect... (Read more)

We observed two paramagnetic defects in thin films of HfO₂ on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2^-" align="middle"> defect. A second spectrum is... (Read more)

An unexpected physical phenomenon—dynamic recovery of negative bias temperature instability (NBTI)—is reported. NBTI degradation in p-type metal–oxide–semiconductor field-effect transistors is significantly (by ~40%) reduced after stress interruption. NBTI recovery... (Read more)

Interface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D₂ annealing, conductance-frequency measurements, and electron-spin resonance measurements. D₂ annealing was shown to lower... (Read more)

The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies of both near-interface fixed-charge trapping and interface state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that the charge... (Read more)

We used electrically detected magnetic resonance to study the microscopic structure of ion-implantation-induced point defects that remained in large-scale Si integrated circuits (Si LSIs). Two types of defects were detected in the source/drain (n⁺-type) region of... (Read more)

We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metal–oxide–semiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit... (Read more)

Two paramagnetic intrinsic defects P and ND1 have been studied in both C-rich n-type 4H-SiC and undoped semi-insulating (s.i.) 4H-SiC in the dark and under illumination of the s.i. sample with light at 140 and 37 GHz in the temperature interval from 4.2 to 77 K. Photo EPR and Hall effect... (Read more)

Poly-Si/SiO₂/Si diodes in which oxides were grown thermally under wet oxidation conditions and subsequently treated by a post-oxidation anneal (POA) have been characterized electrically and chemically before and after applying negative-bias-temperature stress (NBTS). It was confirmed that... (Read more)

We report electron spin resonance (ESR) observation of interface defects at the HfO₂/(111)Si boundary for HfO₂ films deposited via atomic layer chemical vapor deposition using Hf(NO₃)₄ as a precursor. We observe several signals, dominated by one due to a... (Read more)

The electronic properties of the (100) Si/SiO₂ interfacial defect called P_b1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the P_b1 defects have levels in the silicon band gap, (2) that... (Read more)

Optical injection of electron-hole pairs in 3–5 nm thick layers of SiO₂, Al₂O₃, ZrO₂ and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides... (Read more)

Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5?10¹⁸ to 5.0?10¹⁹ cm^-3. The samples were also characterized by secondary-ion-mass... (Read more)

We have characterized the leakage current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 nm. We examined the nature of the trap sites in terms of g-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leakage current. (Read more)

GaN community has recently recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this... (Read more)

The yellow luminescence band in high-energy 7 MeV electron-irradiated n-GaN is investigated as a function of electron irradiation dose. Both the yellow-band intensity and the near-bandedge photoluminescence (PL) intensity decrease continually with increasing electron irradiation dose. The decrease... (Read more)

We show that Cat-CVD silicon nitride films contain more than 1019 cm−3 nitrogen-bonded Si dangling bonds, similarly to the case for conventional CVD films. However, the charge-trapping behavior of the Cat-CVD films is found to be quite different, in spite of the same origin for the dominant... (Read more)

The C(000) face of silicon carbide (SiC) has superior properties such as a faster oxidation ratio and a smoother surface compared with the Si(0001) face. We have investigated the oxidation and post-oxidation annealing effects on the capacitance–voltage and the interface state density... (Read more)

The electronic properties of the (001) Si/SiO₂ P_b1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the P_b1 centers have levels in the Si band gap. Our... (Read more)

The effects of hydrogen annealing on capacitance–voltage (C–V) characteristics and interface-state density (D_it) of 4H–SiC metal–oxide–semiconductor (MOS) structures have been investigated. The D_it was reduced to as low as... (Read more)

Deep centers in n-type 4H–SiC and 6H–SiC irradiated with 8 MeV protons have been investigated by capacitance spectroscopy and electron paramagnetic resonance (EPR). Samples were fabricated by sublimation epitaxy or commercially produced by CREE Inc. Research Triangle Park, NC. It is... (Read more)

Comparisons are made between the carrier concentrations, ionization energies, and electron mobilities in 4H–SiC samples implanted with similar doses of nitrogen or phosphorus and annealed at 1300 or 1700 °C for 10 min in argon. The objective of the research is to determine which element may... (Read more)

Photothermal ionization spectroscopy (PTIS) measurements were carried out on a free-standing, high purity and high quality 4H–SiC epitaxial layer at various temperatures. The two step photothermal ionization process is clearly reflected in the temperature dependence of the photoconductivity.... (Read more)

Band-gap states of tungsten in silicon carbide (polytypes 4H, 6H, and 15R) are investigated by deep-level transient spectroscopy (DLTS) and admittance spectroscopy on n-type SiC. Doping with W is done by ion implantation and annealing. To establish a definite chemical identification of band-gap... (Read more)

N-type silicon doped with gold and lithium was investigated by Electron Paramagnetic Resonance (EPR) and Deep Level Transient Spectroscopy (DLTS), using two sets of samples with different defect concentrations of both gold and lithium. Photoluminescence (PL) on both sets of samples allowed to... (Read more)

Hydrogen-related metastable defects (M3/M4) in n-GaAs were studied in relation to the EL2 center. We found that the M3/M4 defects were observed only in the crystals containing the EL2 center in the as-grown state after exposure to a hydrogen plasma. The EL3 level, which was tentatively assigned as... (Read more)

Electron paramagnetic resonance (EPR) measurements of Si/SiO₂ systems began over 30 years ago. Most EPR studies of Si/SiO₂ systems have dealt with two families of defects: P_b centers and E centers. Several variants from each group have... (Read more)

Hole trapping in the oxides thermally grown on different polytypes of SiC (3C, 4H, 6H) was studied using photogeneration of charge carriers in SiO₂ and electron-spin-resonance spectroscopy. Oxygen vacancy defects were found to be the dominant hole traps in the oxide. Generation of... (Read more)

Semi-insulating 6H–SiC crystals have been achieved by using controlled doping with deep-level vanadium impurities. High resistivity undoped and semi-insulating vanadium-doped single-crystals with diameters up to 50 mm were grown by physical vapor transport using an induction-heated, cold-wall... (Read more)

I studied the effects of grown-in hydrogen on the lifetime of Czochralski-grown silicon crystals. It was found that grown-in hydrogen degraded the electrical properties of Czochralski-grown silicon crystals by enhancing the formation of recombination centers, which had a high thermal stability... (Read more)

Single crystal GaN thin films resulting from various deposition techniques are usually dominated by residual donors. To date, the true nature of this donor conduction is not known. Nitrogen vacancies, residual oxygen, and growth defects are cited as potential causes for the residual n-type... (Read more)

We report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533±0.0008 independent of temperature, a Lorentzian line shape, and a linewidth (18 G at 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was... (Read more)

Hot electrons in the gate dielectric (SiO₂) of field effect transistors create defects at the Si/SiO₂ interface. Using electrically detected magnetic resonance, we have identified a major component of these interface defects as the well-known P_b0 center. We... (Read more)

Microwave-Hall-effect (MHE) and electrical conductivity measurement techniques can now be used to obtain absolute values of the electrical properties of semiconductor powders under different controlled conditions. A commercial ESR spectrometer was modified to conduct MHE experiments and a network... (Read more)

We demonstrate the drift of a donor-passivating hydrogen species under the action of the electric field in the depletion region of a reverse-biased Au/n-Si Schottky diode hydrogenated by exposure to a low-frequency discharge. The redistribution is explained by the unidirectional drift of a... (Read more)