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- 1. Appl. Phys. Lett. 85, 3780 (2004) , “Low temperature annealing of electron irradiation induced defects in 4H-SiC”, Antonio Castaldini, Anna Cavallini, Lorenzo Rigutti, Filippo NavaLow temperature annealing of electron irradiation-induced deep levels in 4H-SiC is reported. The major deep level transient spectroscopy peak S2 associated with the energy level at Ec0.39 eV disappears in the temperature range 360400 K, and some rearrangement... (Read more)
- 2. Phys. Rev. Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”, B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen
- 3. Physica B 170, 155-167 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V. Gorelkinskii, N.N. Nevinnyi
- 4. J. Appl. Phys. 43, 3499-3506 (1972) , “Electron Paramagnetic Resonance of the lattice Damage in Oxygen-Implanted Silicon”, K.L. Brower and Wendland BeezholdThe nature of the lattice damage produced at room temperature in ion-implanted intrinsic and n-type silicon has been studied as a function of 160-keV O+ ion fluence using electron paramagnetic resonance (EPR). The known EPR spectra observed were the negative divacancy (Si-G7), the... (Read more)Si| EPR ion-implantation neutron-irradiation| 31P D G7 Oxygen P3 Phosphorus S1 S2 SL2 Silicon amorphous vacancy .inp files: Si/SL2 | last update: Takahide Umeda
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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