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- 1. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 2. Phys. Rev. B 73, 115203 (2006) , “Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica”, S. Agnello and L. NuccioThe effects of isochronal thermal treatments on three -irradiation-induced point defects, named the E, ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO2). ODC(II) is investigated by means of photoluminescence spectroscopy,... (Read more)
- 3. Phys. Rev. Lett. 97, 135502 (2006) , “29Si Hyperfine Structure of the Eα Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report a study by electron paramagnetic resonance on the Eα point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on γ-ray irradiated oxygen-deficient materials and pointed out that the 29Si... (Read more)
- 4. Appl. Phys. Lett. 87, 204106 (2005) , “Direct observation of the structure of defect centers involved in the negative bias temperature instability”, J. P. Campbell and P. M. LenahanWe utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors.... (Read more)
- 5. Appl. Phys. Lett. 78, 1453-1454 (2001) , “Response to "Comment on `Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum" ' " [Appl. Phys. Lett. 78, 1451 (2001)]”, Tetsuya D. Mishima and Patrick M. LenahanWe recently published a letter in which we utilized spin-dependent recombination (SDR) measurements to demonstrate that Pb1 centers, silicon dangling-bond defects at the (001) Si/SiO2 interface, have electronic levels in the silicon band gap.1 In their comment on our... (Read more)
- 6. Phys. Rev. B 64, 195403 (2001) , “Intrinsic and H-induced defects at Si-SiO2 Interfaces”, D. J. ChadiDefect reactions pertaining to Si-SiO2 interfaces are investigated using a first-principles total-energy approach. Interesting results on the atomic structures of interstitial H+ and OH-, H2O, and H3O+ in SiO2 are... (Read more)
- 7. Phys. Rev. Lett. 86, 5522-5525 (2001) , “E' Centers in Amorphous SiO2 Revisited: A New Look at an Old Problem”, T. Uchino, M. Takahashi, T. YokoWe present theoretical evidence that the paramagnetic E? defect centers in amorphous silicon dioxide ( a-SiO2) do not have the same microscopic structures as those well-defined in the corresponding crystalline counterparts such as ?-quartz. We then present alternative models of... (Read more)
- 8. Physica B 273-274, 1022-1026 (1999) , “Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs”, Peter E. Blöchl and James H. StathisDefects in silica related to hydrogen and oxygen vacancies have been analyzed using first principles density functional calculations. The hydrogen bridge has been identified as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown. The question of Joule... (Read more)
- 9. J. Non-Cryst. Solids 239, 16-48 (1998) , “Optically active oxygen-deficiency-related centers in amorphous silicon dioxide”, Linards SkujaThe spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic... (Read more)GeO2 SiO2| EPR PL gamma-irradiation optical-spectroscopy| 0.5-1.0eV 1.0eV~ 1H 2.0eV~ 3.0eV~ 4.0eV~ 5.0eV~(larger) Chlorine E' E'-alpha E'-betha E'-delta E'-gamma Germanium H(I) H(II) Hydrogen ODC ODC(I) ODC(II) OHC Oxygen POR Silicon amorphous dangling-bond dielectric interstitial pair(=2) surface triplet vacancy | last update: Takahide Umeda
- 10. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 11. Mater. Sci. Eng. B 54, 38-42 (1998) , “Detection and analysis of 29Si hyperfine structures in ESR spectra of E′ and E′-type centers in SiO2 glasses”, M. Mizuguchi, H. Hosono, H. KawazoeFour sets of ESR doublets with splittings of 9, 23, 26 or 44 mT were observed in dry a-SiO2 (Type IV, OH concentrations1017 cm−3) implanted with 29Si+ to a fluence of 6×1016 cm−2 at 160 keV. These doublets were attributed to the hyperfine structures due to a 29Si nucleus of... (Read more)
- 12. Phys. Rev. Lett. 80, 317-320 (1998) , “Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2 by Electronic Excitation”, H. Hosono, H. Kawazoe, N. MatsunamiConcentrations of defects in amorphous SiO2 created by implantation of 10 MeV protons were examined. The depth profile of Si-Si bonds, E? centers, or peroxy radicals (PORs) was close to that of electronic energy loss. Interstitial O2 molecules were identified and... (Read more)
- 13. Appl. Phys. Lett. 71, 3844-3846 (1997) , “H-complexed oxygen vacancy in SiO2: Energy level of a negatively charged state”, V. V. Afanas'ev and A. StesmansThe defects generated in SiO2 during irradiation with energetic (10 eV) photons were found to trap electrons at a level 3.1 eV below the oxide conduction band. The electron spin resonance data and the behavior upon hydrogen passivation indicate that the optically active state may be... (Read more)
- 14. IEEE Transactions on Electron Devices 44, 1002 (1997) , “A Quantitative Analysis of Time-Decay Reproducible Stress-Induced Leakage Current in SiO2 Films”, K. Sakakibara, N. Ajika, K. Eikyu, K. Ishikawa, H. Miyoshi
- 15. Appl. Phys. Lett. 69, 2252 (1996) , “Hole traps in oxide layers thermally grown on SiC”, V. V. Afanas'ev and A. StesmansHole trapping in the oxides thermally grown on different polytypes of SiC (3C, 4H, 6H) was studied using photogeneration of charge carriers in SiO2 and electron-spin-resonance spectroscopy. Oxygen vacancy defects were found to be the dominant hole traps in the oxide. Generation of... (Read more)
- 16. Appl. Phys. Lett. 67, 2179-2181 (1995) , “Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2”, J F. Conley, Jr., P. M. Lenahan, A. J. Lelis, T. R. OldhamWe provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can ``switch'' charge state in response to changes in the voltage applied to the gate of a... (Read more)
- 17. J. Appl. Phys. 75, 1047-1058 (1994) , “Generation aspects of the delocalized intrinsic EX defect in thermal SiO2”, A. Stesmans and F. ScheerlinckA K-band electron-spin-resonance study of the appearance of the delocalized intrinsic EX center in dry thermal SiO2 was performed on (001) and (111) Si/SiO2. The defect is found in both structures in nearly identical spin densities, 1.2×1012... (Read more)
- 18. J. Non-Cryst. Solids 179, 39-50 (1994) , “Paramagnetic resonance of E′-type centers in Si-implanted amorphous SiO2. Si29 hyperfine structure and characteristics of Zeeman resonances*1”, H. Hosono, H. Kawazoe, K. Oyoshi, S. TanakaElectron paramagnetic resonance spectra were measured on SiO2 glasses implanted with Si ions to a fluence of 6 × 1016 cm−2 at an acceleration voltage of 160 kV. Three sets of doublets with different separation were observed in Si29-implanted substrates and were ascribed to primary... (Read more)
- 19. J. Non-Cryst. Solids 179, 1-9 (1994) , “The many varieties of E′ centers: a review”, Robert A. WeeksThree varieties of E′ centers with a spin state, S = 1/2, and with a G-tensor, Gx Gy 2.0003, Gz 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz. The atomic structure of two of these had an hydrogen ion (proton) in nearby sites and hence... (Read more)
- 20. Phys. Rev. B 50, 14710-14713 (1994) , “Defect-defect hole transfer and the identity of border traps in SiO2 films”, W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur, R. A. B. DevineWe have found evidence for hole-transfer events between oxygen-vacancy-related defects in thermal SiO2 films selectively injected with holes using electron paramagnetic resonance (EPR) and capacitance-voltage measurements. We find that hole injection into SiO2 films reveals two... (Read more)
- 21. Appl. Phys. Lett. 62, 40-42 (1993) , “Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon”, J. F. Conley and P. M. LenahanExposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon... (Read more)
- 22. IEEE Transactions on Electron Devices 40, 986-993 (1993) , “Correlation of Stress-Induced Leakage Current in Thin Oxides with Trap Generation Inside the Oxides”, D. J. Dumin, J. R. Maddux
- 23. J. Appl. Phys. 74, 275-283 (1993) , “Characterization and depth profiling of E' defects in buried SiO2”, K. Vanheusden and A. StesmansOxygen-vacancy defects (E) generated at the surface of buried SiO2 (BOX) layers formed by O + implantation during the separation by implantation of oxygen process have been studied by electron spin resonance at 4.3 K. The E generation tool used was exposure to a... (Read more)
- 24. J. Non-Cryst. Solids 149, 137-160 (1992) , “Electron spin resonance characterization of self-trapped holes in amorphous silicon dioxide”, David L. GriscomThe electron spin resonance spectra of radiation-induced self-trapped holes (STHs) in amorphous silicon dioxide are isolated by isochromal annealing experiments and computer simulation analyses. Two distinct components, denoted STH1 and STH2 (plus a third component intermediate between the two),... (Read more)
- 25. Phys. Rev. B 45, 9501-9504 (1992) , “New intrinsic defect in as-grown thermal SiO2 on (111)Si”, A. StesmansK-band electron-spin resonance (ESR) has revealed an isotropic signal of g=2.002 46?0.000 03 in as-prepared SiO2 thermally grown on (111)Si in dry O2 at 700?860?C. The spectrum comprises a symmetric central signal of peak-to-peak width ??pp=1.0 G amid a... (Read more)
- 26. Phys. Rev. Lett. 67, 2517 (1991) , “Experimental evidence for excitonic mechanism of defect generation in high-purity silica”, T. E. Tsai and D. L. GriscomDirect evidence for the creation of oxygen-vacancy, oxygen-interstitial pairs in SiO2 glasses by an excitonic mechanism is developed from an electron-spin-resonance study of high-purity fused silicas exposed to highly focused 6.4-eV excimer laser light. (Read more)
- 27. IEEE Trans. Nucl. Sci. 36, 1800-1807 (1989) , “A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 28. Appl. Phys. Lett. 50, 1663-1665 (1987) , “Electron spin resonance observation of defects in device oxides damaged by soft x rays”, B. B. Triplett, T. Takahashi, and T. SuganoWe report the use of vacuum soft x-ray (VXR) exposure to efficiently generate paramagnetic defects in thin oxide layers. The VXR technique allows the observation of an E related defect called the 74-G doublet in quantities as large as the E. This defect is the first paramagnetic... (Read more)
- 29. J. Appl. Phys. 62, 4305-4308 (1987) , “Fundamental differences between thick and thin oxides subjected to high electric fields”, William L. Warren and P. M. LenahanWe observe atomic scale differences in the response of thin and thick oxides subjected to high electric fields. In stressed thick oxides, we observe the generation of a ``trivalent silicon'' trapped hole center, termed E; in stressed thin oxides no E centers were... (Read more)
- 30. Phys. Rev. B 34, 7524-7533 (1986) , “Fundamental radiation-induced defect centers in synthetic fused silicas: Atomic chlorine, delocalized E' centers, and a triplet state”, D. L. Griscom and E. J. FriebeleA series of synthetic fused silicas of diverse OH contents was subjected to 100-keV x irradiations at 77 K and investigated by electron-spin-resonance techniques at ?110 K or higher temperatures. Spectra were recorded at X-band frequencies (?9.2?9.3 GHz) both as the first derivative of absorption... (Read more)
- 31. Appl. Phys. Lett. 44, 96-98 (1984) , “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, P. M. Lenahan and P. V. DressendorferWe find that two paramagnetic ``trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures. Applied Physics Letters is copyrighted by The American Institute of Physics. ... (Read more)
- 32. J. Appl. Phys. 55, 3495-3499 (1984) , “Hole traps and trivalent silicon centers in metal/oxide/silicon devices”, P. M. Lenahan and P. V. DressendorferWe report electron spin resonance (ESR) measurements of E-center (a ``trivalent silicon'' center in SiO2) density as well as capacitance versus voltage (C-V) measurements on -irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of... (Read more)
- 33. Phys. Rev. Lett. 51, 423 (1983) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, Katsumi Tanimura, Takeshi Tanaka, and Noriaki ItohThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 34. J. Chem. Phys. 74, 5436-5448 (1981) , “EPR and ab initio SCF–MO studies of the Si·H–Si system in the E[prime]4" align="middle"> center of -quartz”, J. Isoya, J. A. Weil, L. E. HalliburtonThe E[prime]4" align="middle"> center in irradiated -quartz has been studied by single-crystal EPR. The unpaired electron is shared mainly by two silicon ions Si(1, 2) with the larger fraction on Si(2). The spin-Hamiltonian parameter matrices , 1H,... (Read more)
- 35. J. Appl. Phys. 50, 5847-5854 (1979) , “ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers”, P. J. Caplan, E. H. Poindexter, B. E. Deal, R. R. RazoukThe ESR Pb center has been observed in thermally oxidized single-crystal silicon wafers, and compared with oxide fixed charge Qss and oxidation-induced interface states Nst. The Pb center is found to be located... (Read more)
- 36. J. Non-Cryst. Solids 32, 327-338 (1979) , “ELECTRON SPIN RESONANCE AND HOPPING CONDUCTIVITY OF a-SiOx”, E. Holzenk?mpfer, F. -W. Richter, J. Stuke, U. Voget-GroteAmorphous SiOx-layers with O < x < 2 have been prepared by evaporation of Si at oxygen pressures of 10−6 … 10−3 mbar. The composition of the samples was determined by proton backscattering. The band gap, derived from optical measurements, increases with rising oxygen... (Read more)
- 37. J. Non-Cryst. Solids 32, 313-326 (1979) , “OXYGEN-ASSOCIATED TRAPPED-HOLE CENTERS IN HIGH-PURITY FUSED SILICAS”, M. Stapelbroek, D. L. Griscom, E. J. Friebele and G. H. Sigel, Jr.Two distinct oxygen-associated trapped-hole centers (OHCs) are identified in samples of room-temperature γ-irradiated, high-purity fused silica. One, which we label the "wet" OHC, predominates in the high-OH-content (wet) silicas while the other, the "dry" OHC, is more... (Read more)
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