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- 1. Appl. Phys. Express 3, 051002 (2010) , “Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient spectroscopy and nitrogen concentration dependence of its density. It has a high capture cross section and not observed in N... (Read more)
- 2. Appl. Phys. Express 3, 031103 (2010) , “High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates”, Seunghwan Park, Tsutomu Minegishi, Dongcheol Oh, Hyunjae Lee, Toshinori Taishi, Jinsub Park, Mina Jung, Jiho Chang, Inho Im, Junseok Ha, Soonku Hong, Ichiro Yonenaga, Toyohiro Chikyow, and Takafumi YaoThis article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4×1016 cm-3, while ZnO:N shows n-type... (Read more)
- 3. Jpn. J. Appl. Phys. 49, 071302 (2010) , “Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper”, Minoru Nakamura and Susumu MurakamiWe have observed the formation of the Cu centers in p-type Si crystals diffused with dilute Cu between 400 and 1000 °C by deep-level transient spectroscopy (DLTS) and photoluminescence methods. For the samples diffused below 800 °C, a DLTS Cu center denoted as the CuDLB center was... (Read more)
- 4. Jpn. J. Appl. Phys. 49, 05FE02 (2010) , “Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers”, Kiyoteru Kobayashi and Taketoshi IdeThe current conduction in silicon carbon nitride (SiCN) dielectric films subjected to ultraviolet (UV) illumination at room temperature has been investigated. After exposure of SiCN single-layer and SiCN–SiO2 double-layer films to 4.9-eV UV illumination, leakage currents through... (Read more)
- 5. Jpn. J. Appl. Phys. 49, 051001 (2010) , “Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination center. The level is found to be responsible for the reverse bias current in the depletion region of n-type GaAsN schottky... (Read more)
- 6. Appl. Phys. Express 2, 091101 (2009) , “Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment”, Toru Hiyoshi and Tsunenobu KimotoBy thermal oxidation of 4H-SiC at 1150–1300 °C, the Z1/2 and EH6/7 concentrations can be reduced to below 1×1011 cm-3. By the oxidation, however, a high concentration of HK0 center (EV + 0.78 eV) is generated.... (Read more)
- 7. Appl. Phys. Express 2, 041101 (2009) , “Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation”, Toru Hiyoshi and Tsunenobu KimotoSignificant reduction of major deep levels in n-type 4H-SiC(0001) epilayers by means of thermal oxidation is demonstrated. By thermal oxidation of epilayers at 1150–1300 °C, the concentration of the Z1/2 and EH6/7 centers has been reduced from... (Read more)
- 8. Appl. Phys. Lett. 94, 092105 (2009) , “Interaction of oxygen with thermally induced vacancies in Czochralski silicon”, V. Akhmetov, G. Kissinger, and W. von AmmonComplexes consisting of a vacancy and four oxygen atoms, VO4, were found in oxygen-rich Czochralski silicon wafers subjected to rapid thermal annealing (RTA) at 1250 °C for 30 s in Ar/O2 atmosphere by means of Fourier transform infrared spectroscopy with enhanced... (Read more)
- 9. Appl. Phys. Lett. 94, 091903 (2009) , “Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys”, M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence spectroscopy was employed to study the impurity transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was observed in Mg-doped AlxGa1−xN alloys, which was identified to have the same origin as the... (Read more)
- 10. Appl. Phys. Lett. 94, 061910 (2009) , “Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy”, M. J. Wang, L. Yuan, C. C. Cheng, C. D. Beling, and K. J. ChenDefect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180... (Read more)
- 11. J. Appl. Phys. 105, 053709 (2009) , “Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, David D. Caudel, Pijush Bhattacharya, Arnold Burger, Krishna C. Mandal, D. Johnstone, and S. A. PayneDeep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Three... (Read more)
- 12. J. Appl. Phys. 105, 013504 (2009) , “Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices”, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Akio Takano, Kentarou Sawano, and Yasuhiro ShirakiWe investigated the contributions of neutral and charged silicon self-interstitials to self- and boron diffusion during transient enhanced diffusion in silicon. We simultaneously observed self- and boron diffusion in silicon using natSi/28Si isotope superlattices. A calculation... (Read more)
- 13. Jpn. J. Appl. Phys. 48, 081003 (2009) , “Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN”, Kuan-Ting Liu, Shoou-Jinn Chang, and Sean WuThe effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant... (Read more)
- 14. Jpn. J. Appl. Phys. 48, 031205 (2009) , “Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide”, Kazuhiro Mochizuki, Haruka Shimizu, and Natsuki YokoyamaReported profiles of high-temperature (500 °C)-implanted boron ions diffused in 4H-silicon carbide at 1200–1900 °C for 5–90 min were simulated through a “dual-sublattice” modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a... (Read more)
- 15. Phys. Rev. B 79, 075207 (2009) , “EPR study of local symmetry sites of Ce3+ in Pb1−xCexA (A=S, Se, and Te)”, X. Gratens, V. Bindilatti, V. A. Chitta, N. F. Oliveira, and Jr.The local site symmetry of Ce3+ ions in the diluted magnetic semiconductors Pb1−xCexA (A=S, Se, and Te) has been investigated by electron-paramagnetic resonance (EPR). The experiments were carried out on single crystals with cerium... (Read more)
- 16. Phys. Rev. B 79, 075203 (2009) , “Hyperfine interaction in the ground state of the negatively charged nitrogen vacancy center in diamond”, S. Felton, A. M. Edmonds, and M. E. NewtonThe 14N, 15N, and 13C hyperfine interactions in the ground state of the negatively charged nitrogen vacancy (NV−) center have been investigated using electron-paramagnetic-resonance spectroscopy. The previously published parameters for the... (Read more)
- 17. Phys. Rev. B 79, 075201 (2009) , “First-principles studies of small arsenic interstitial complexes in crystalline silicon”, Yonghyun Kim, Taras A. Kirichenko, Ning Kong, Graeme Henkelman, and Sanjay K. BanerjeeWe present a first-principles study of the structure and dynamics of small As-interstitial complexes (AsI2, As2I2, AsI3, and As2I3) in crystalline Si. These complexes can be important components of stable As-interstitial clusters or... (Read more)
- 18. Phys. Rev. B 79, 014102 (2009) , “Vacancy defect positron lifetimes in strontium titanate”, R. A. Mackie, S. Singh, J. Laverock, S. B. Dugdale, and D. J. KeebleThe results of positron-annihilation lifetime spectroscopy measurements on undoped, electron-irradiated, and Nb-doped SrTiO3 single crystals are reported. Perfect lattice and vacancy defect positron lifetimes were calculated using two different first-principles schemes. The Sr-vacancy... (Read more)
- 19. Phys. Rev. Lett. 102, 065502 (2009) , “Transition Metal Impurities on the Bond-Centered Site in Germanium”, S. Decoster, S. Cottenier, B. De Vries, H. Emmerich, U. Wahl, J. G. Correia, and A. VantommeWe report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the... (Read more)
- 20. Appl. Phys. Lett. 93, 152108 (2008) , “Internal gettering of iron in multicrystalline silicon at low temperature”, Rafael Krain, Sandra Herlufsen, and Jan SchmidtThe interstitial iron concentration in multicrystalline silicon wafers, determined from recombination lifetime measurements, is effectively reduced by annealing the wafers at very low temperature (300–500 °C). During annealing, the iron concentration decreases by more than one order of... (Read more)
- 21. Appl. Phys. Lett. 93, 141907 (2008) , “Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge”, S. Decoster, B. De Vries, U. Wahl, J. G. Correia, and A. VantommeWe report on an emission channeling study of the lattice site location of implanted Er in Ge together with its thermal stability. We found direct experimental evidence of Er atoms located on the tetrahedral (T) interstitial site and on the bond-centered (BC) site, with a maximum total occupancy... (Read more)
- 22. Appl. Phys. Lett. 93, 103505 (2008) , “Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance”, A. Stesmans, P. Somers, V. V. Afanas'ev, W. Tian, L. F. Edge, and D. G. SchlomElectron spin resonance study on heteroepitaxial Si/insulator structures obtained through the growth of epi-Lu2O3 films on (111)Si (~4.5 % mismatched) by reactive molecular beam epitaxy indicates the presence in the as-grown state of interfacial Pb... (Read more)
- 23. Appl. Phys. Lett. 93, 032108 (2008) , “High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC”, Giovanni Alfieri and Tsunenobu KimotoWe report on the thermal stability of deep levels detected after 1 MeV electron irradiated p-type 6H-SiC. The investigation was performed by deep level transient spectroscopy, and an isochronal annealing series was carried out in the 373–2073 K temperature range. We found seven... (Read more)
- 24. Appl. Phys. Lett. 92, 222109 (2008) , “Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction”, Q. L. Gu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa, Y. F. Hsu, A. B. Djurišić, C. Y. Zhu, S. Fung, and L. W. LuNitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and... (Read more)
- 25. Appl. Phys. Lett. 92, 142105 (2008) , “Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC”, J. Wong-Leung and B. G. SvenssonHigh-purity and low-doped n-type epitaxial layers of 4H-SiC have been implanted with N and C ions by using energies in the MeV range and doses from 2×108 to 1×109 cm−2. Postimplant annealing was performed at 1100 °C prior to... (Read more)
- 26. Appl. Phys. Lett. 92, 132104 (2008) , “Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory”, Y. J. Seo, K. C. Kim, and T. G. KimThe origin of the electron memory trap in an oxide-nitride-oxide structure deposited on n-type Si is investigated by both capacitance-voltage and deep level transient spectroscopy (DLTS). Two electron traps are observed near 0.27 and 0.54 eV, below the conduction band minimum of Si and are... (Read more)
- 27. Appl. Phys. Lett. 92, 132102 (2008) , “On the identity of a crucial defect contributing to leakage current in silicon particle detectors”, J. H. Bleka, L. Murin, E. V. Monakhov, B. S. Avset, and B. G. SvenssonThe annealing kinetics of the so-called E4/E5 center or E4a/E4b center in electron-irradiated Si particle detectors has been studied at four different temperatures from 23 to 65 °C using deep-level transient spectroscopy (DLTS). The center gives rise to two energy levels at 0.37 and 0.45 eV... (Read more)
- 28. J. Appl. Phys. 104, 093711 (2008) , “Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes”, G. Izzo, G. Litrico, L. Calcagno, G. Foti, and F. La ViaThe changes in the electrical properties of 4H-SiC epitaxial layer induced by irradiation with 7.0 MeV C+ ions were investigated by current-voltage measurements and deep level transient spectroscopy (DLTS). Current-voltage characteristics of the diodes fabricated from epilayers... (Read more)
- 29. J. Appl. Phys. 104, 093521 (2008) , “Native defects and oxygen and hydrogen-related defect complexes in CdTe: Density functional calculations”, Mao-Hua Du, Hiroyuki Takenaka, and David J. SinghWe study structural and electronic properties of various intrinsic and extrinsic defects in CdTe based on first-principles calculations. The focus is given to the role of these defects in the carrier compensation in semi-insulating CdTe, which is essential for the CdTe-based radiation detectors. The... (Read more)
- 30. J. Appl. Phys. 104, 083702 (2008) , “A bistable divacancylike defect in silicon damage cascades”, R. M. Fleming, C. H. Seager, D. V. Lang, E. Bielejec, and J. M. CampbellTwo deep level transient spectroscopy (DLTS) electron emission signatures, previously labeled E4 and E5, have been shown to be bistable with respect to minority carrier injection at room temperature. These result from two charge state transitions of the same defect. We have performed DLTS... (Read more)
- 31. J. Appl. Phys. 104, 054110 (2008) , “The effect of implanting boron on the optical absorption and electron paramagnetic resonance spectra of silica”, R. H. Magruder, III, A. Stesmans, R. A. Weeks,, and R. A. WellerSilica samples (type III, Corning 7940) were implanted with B using multiple energies to produce a layer ~600 nm thick in which the concentration of B ranged from 0.034 to 2.04 at. %. Optical absorption spectra were measured from 1.8 to 6.5 eV. Electron paramagnetic resonance (EPR) measurements... (Read more)
- 32. J. Appl. Phys. 104, 043702 (2008) , “Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation”, Hideharu Matsuura, Nobumasa Minohara, and Takeshi OhshimaThe hole concentration in Al-doped p-type 4H-SiC was found to be significantly reduced by electron irradiation when compared to the hole concentration in Al-doped p-type Si; this is an unexpected result. The temperature dependence of the hole concentration p(T) in... (Read more)
- 33. J. Appl. Phys. 104, 023705 (2008) , “Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium”, E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, and P. ClauwsDeep levels have been studied in n-type germanium subjected to Co, Fe, Cu, Cr, and Pt germanidation in the temperature range between 300 and 700 °C by deep-level transient spectroscopy (DLTS). It is shown that most DLTS peaks can be assigned to acceptor levels of substitutional metal... (Read more)
- 34. J. Appl. Phys. 103, 123709 (2008) , “Optical detection of magnetic resonance and electron paramagnetic resonance study of the oxygen vacancy and lead donors in ZnO”, R. Laiho, L. S. Vlasenko, and M. P. VlasenkoOptical detection of magnetic resonance (ODMR) and electron paramagnetic resonance (EPR) spectra are investigated in ZnO single crystals. The strong negative ODMR line with axial symmetry of the g-tensor around the c axis with g=2.0133±0.0001 and... (Read more)
- 35. J. Appl. Phys. 103, 104505 (2008) , “Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam”, A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo, and S. IshibashiA relationship between intra-4f transitions of Er and vacancy-type defects in Er-doped GaN was studied by using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured for Er-doped GaN grown by molecular beam epitaxy. A clear correlation between... (Read more)
- 36. J. Appl. Phys. 103, 094901 (2008) , “Investigation of the origin of deep levels in CdTe doped with Bi”, E. Saucedo, J. Franc, H. Elhadidy, P. Horodysky, C. M. Ruiz, V. Bermúdez, and N. V. SochinskiiCombining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of... (Read more)
- 37. J. Appl. Phys. 103, 093701 (2008) , “Characterization of plasma etching damage on p-type GaN using Schottky diodes”, M. Kato, K. Mikamo, M. Ichimura, M. Kanechika, O. Ishiguro, and T. KachiThe plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of... (Read more)
- 38. J. Appl. Phys. 103, 073716 (2008) , “Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures”, Jinggang Lu, Yongkook Park, and George A. RozgonyiThree SiGe/Si heterostructures with different Ge contents have been examined by deep level transient spectroscopy (DLTS) and capacitance-voltage techniques. DLTS revealed a broad band of traps from 80 to 250 K in the as-grown samples. Arrhenius plots of a 25% SiGe sample revealed three trap... (Read more)
- 39. J. Appl. Phys. 103, 044505 (2008) , “Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors”, J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. KrishnanWe utilize a combination of DC gate-controlled diode recombination current measurements as well as two very sensitive electrically detected magnetic resonance techniques, spin-dependent recombination and spin-dependent tunneling, to identify atomic-scale defects involved in the negative bias... (Read more)
- 40. J. Appl. Phys. 103, 043710 (2008) , “Further characterization of oxygen vacancies and zinc vacancies in electron-irradiated ZnO”, S. M. Evans, N. C. Giles, L. E. Halliburton, and L. A. KappersElectron paramagnetic resonance (EPR) has been used to monitor oxygen vacancies and zinc vacancies in a ZnO crystal irradiated near room temperature with 1.5 MeV electrons. Out-of-phase detection at 30 K greatly enhances the EPR signals from these vacancies. Following the electron irradiation, but... (Read more)
- 41. J. Appl. Phys. 103, 033701 (2008) , “Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC”, X. D. Chen, S. Dhar, T. Isaacs-Smith, J. R. Williams, L. C. Feldman, and P. M. MooneyPostoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at SiO2/4H-SiC interfaces. Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealed SiO2/4H-SiC interfaces were performed using... (Read more)
- 42. J. Appl. Phys. 103, 013710 (2008) , “Acceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, Ryan Dupere, and Arnold BurgerDeep-acceptor levels associated with indium in indium-doped GaSe crystals have been measured. High-quality Schottky diodes of GaSe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Four DLTS peaks at 127, 160, 248, and... (Read more)
- 43. Phys. Rev. B 78, 235204 (2008) , “Symmetry of the phosphorus donor in diamond from first principles”, Bozidar Butorac and Alison MainwoodPhosphorus is the only donor in diamond which can be used technologically. Several ab initio theoretical models have been published on substitutional phosphorus, and most of them have predicted that it should have tetrahedral or trigonal symmetry. Recent ab initio calculations... (Read more)
- 44. Phys. Rev. B 78, 235203 (2008) , “Electron paramagnetic resonance of sulfur at a split-vacancy site in diamond”, J. M. BakerIn natural diamonds a sulfur-related paramagnetic center labeled W31 has been previously tentatively assigned to an interstitial sulfur species in a positive charge state. However, we show by combining an assessment of available experimental data and density-functional simulations that the hyperfine... (Read more)
- 45. Phys. Rev. B 78, 233201 (2008) , “Gallium interstitial in irradiated germanium: Deep level transient spectroscopy”, Vl. Kolkovsky, M. Christian Petersen, A. Mesli, J. Van Gheluwe, P. Clauws, and A. Nylandsted LarsenTwo electronic levels at 0.34 eV above the valence band and 0.32 eV below the conduction band, in gallium doped, p-type Ge irradiated with 2 MeV electrons have been studied by deep level transient spectroscopy (DLTS) with both majority- and minority-carrier injections, and Laplace DLTS... (Read more)
- 46. Phys. Rev. B 78, 113202 (2008) , “Two FeH pairs in n-type Si and their implications: A theoretical study”, N. Gonzalez Szwacki, M. Sanati, and S. K. EstreicherExperimental evidence for interstitial {FeH} pairs in n-type Si stems from thermally stimulated capacitance (TSCAP). Electron-paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first... (Read more)
- 47. Phys. Rev. B 78, 085214 (2008) , “First-principles study of native defects in CdGeAs2”, Tula R. Paudel and Walter R. L. LambrechtFirst-principles results are presented for various native defects in CdGeAs2 as function of the relevant elements' chemical potentials. The defect formation energies were calculated using fully relaxed 64 atom supercells by means of the full-potential linearized muffin-tin orbital... (Read more)
- 48. Phys. Rev. B 78, 085205 (2008) , “Formation and origin of the dominating electron trap in irradiated p-type silicon”, Lasse Vines, E. V. Monakhov, A. Yu. Kuznetsov, R. Kozowski, P. Kaminski, and B. G. SvenssonDeep level transient spectroscopy and minority-carrier transient spectroscopy (MCTS) have been applied to study electron-irradiated and proton-irradiated p-type Si samples with boron concentrations in the range of 6×1013−2×1015 cm−3.... (Read more)
- 49. Phys. Rev. B 78, 085202 (2008) , “Evolution of vacancy-related defects upon annealing of ion-implanted germanium”, J. Slotte, M. Rummukainen, F. Tuomisto, V. P. Markevich, A. R. Peaker, C. Jeynes, and R. M. GwilliamPositron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×1012 cm−2 and 4×1014 ... (Read more)
- 50. Phys. Rev. B 78, 035125 (2008) , “Mechanisms of electrical isolation in O+-irradiated ZnO”, A. Zubiaga, F. Tuomisto, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, and M. YanoWe have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are... (Read more)
- 51. Phys. Rev. B 78, 033202 (2008) , “Divacancy clustering in neutron-irradiated and annealed n-type germanium”, K. Kuitunen, F. Tuomisto, J. Slotte, and I. CapanWe have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation, the Sb-doped samples [(Sb)=1.5×1015 cm−3] were annealed at 473, 673, and 773 K for 30 min. The positron lifetime was measured as a function of temperature... (Read more)
- 52. Phys. Rev. B 77, 155214 (2008) , “Optical absorption and electron paramagnetic resonance of the Ealpha[prime]" align="middle"> center in amorphous silicon dioxide”, G. Buscarino, R. Boscaino, S. Agnello, and F. M. GelardiWe report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the Ealpha[prime]" align="middle"> point defect in amorphous silicon dioxide (a-SiO2). This defect has been studied in β-ray irradiated and... (Read more)
- 53. Phys. Rev. B 77, 081201(R) (2008) , “Electron paramagnetic resonance studies of the neutral nitrogen vacancy in diamond”, S. Felton, A. M. Edmonds, M. E. Newton, P. M. Martineau, D. Fisher, and D. J. TwitchenDespite the numerous experimental and theoretical studies on the negatively charged nitrogen vacancy center (NV−) in diamond and the predictions that the neutral nitrogen vacancy center (NV0) should have an S= ground state, NV0 has not previously been... (Read more)
- 54. Phys. Rev. B 77, 073206 (2008) , “Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon”, J. H. Bleka, I. Pintilie, E. V. Monakhov, B. S. Avset, and B. G. SvenssonIn hydrogenated high-purity Si, the vacancy-oxygen (VO) center is shown to anneal already at temperatures below 200 °C and is replaced by a center, identified as a vacancy-oxygen-hydrogen complex, with an energy level 0.37 eV below the conduction-band edge and a rather low thermal... (Read more)
- 55. Phys. Rev. B 77, 045204 (2008) , “Vacancy clustering and acceptor activation in nitrogen-implanted ZnO”, Thomas Moe Børseth, Filip Tuomisto, Jens S. Christensen, Edouard V. Monakhov, Bengt G. Svensson, and Andrej Yu. KuznetsovThe role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220 keV N implantation using... (Read more)
- 56. Phys. Rev. B 77, 035201 (2008) , “Native defect properties and p-type doping efficiency in group-IIA doped wurtzite AlN”, Yong Zhang, Wen Liu and Hanben NiuUsing the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p-type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that... (Read more)
- 57. Phys. Rev. Lett. 101, 247604 (2008) , “Measurement of Cu(II) Copper Defect Dipoles in Ferroelectric PbTiO3 Using Electron-Nuclear Double Resonance”, R. R. Garipov, J.-M. Spaeth, and D. J. KeeblePoint defects associated with Cu(II) in ferroelectric PbTiO3 were determined using pulsed electron-nuclear double resonance (ENDOR). Three centers were observed, and neighbor 207Pb superhyperfine tensors to the third shell of equivalent Pb ions measured. The ENDOR angular... (Read more)
- 58. Phys. Rev. Lett. 101, 177204 (2008) , “Diffusion of Interstitial Mn in the Dilute Magnetic Semiconductor (Ga,Mn)As: The Effect of a Charge State”, V. I. Baykov, P. A. Korzhavyi, and B. JohanssonMigration barriers for diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As are studied using first-principles calculations. The diffusion pathway goes through two types of interstitial sites: As coordinated and Ga coordinated. The energy profile along the path is found to... (Read more)
- 59. Phys. Rev. Lett. 100, 026803 (2008) , “Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks”, A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, and H. WiggersWe have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of... (Read more)
- 60. Appl. Phys. Lett. 91, 202111 (2007) , “Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC”, N. T. Son, P. Carlsson, A. Gällström, B. Magnusson, and E. JanzénElectron paramagnetic resonance was used to study semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range of 5.5×1015–1.1×1017 cm−3. Our results show that the electrical activation of V is low and hence only in... (Read more)
- 61. Appl. Phys. Lett. 91, 152102 (2007) , “N–O related shallow donors in silicon: Stoichiometry investigations”, H. E. Wagner, H. Ch. Alt, W. von Ammon, F. Bittersberger, A. Huber, and L. KoesterFor clarification of the unknown chemical composition of the electrically active N–O defects in silicon, an ingot with variable oxygen content and fixed nitrogen concentration was investigated by infrared spectroscopy. Shallow donor spectra taken at different sample positions, i.e., oxygen... (Read more)
- 62. Appl. Phys. Lett. 91, 142101 (2007) , “Dangling-bond defects and hydrogen passivation in germanium”, J. R. Weber, A. Janotti, P. Rinke, and C. G. Van de WalleThe application of germanium in complementary metal-oxide semiconductor technology is hampered by high interface-state densities. Using first-principles calculations, we investigate the effects of dangling bonds (DBs) and their interaction with hydrogen. We find that Ge DBs give rise to electronic... (Read more)
- 63. Appl. Phys. Lett. 91, 132105 (2007) , “Shallow acceptors in GaN”, T. A. G. Eberlein, R. Jones, S. Öberg, and P. R. BriddonRecent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that CN is the most... (Read more)
- 64. Appl. Phys. Lett. 91, 104105 (2007) , “Identification of defects in Y3Al5O12 crystals by positron annihilation spectroscopy”, F. A. Selim, D. Solodovnikov, M. H. Weber, and K. G. LynnPositron annihilation, thermoluminescence, and optical absorption measurements were applied with the aid of several annealing and diffusion procedures to investigate the nature of point defects in Y3Al5O12 (YAG) single crystals. By annealing at 1500 °C in air or... (Read more)
- 65. Appl. Phys. Lett. 91, 092107 (2007) , “Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN”, O. Lopatiuk-Tirpak, L. Chernyak, Y. L. Wang, F. Ren, S. J. Pearton, and K. GartsmanThe electron irradiation-induced increase of minority carrier diffusion length was studied as a function of hole concentration in Mg-doped GaN. Variable-temperature electron beam induced current measurements yielded activation energies of 264, 254, 171, and 144 meV for samples with hole... (Read more)
- 66. Appl. Phys. Lett. 91, 043503 (2007) , “Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN”, Aurangzeb Khan, J. Gou, M. Imazumi, and M. YamaguchiThe authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron... (Read more)
- 67. Appl. Phys. Lett. 91, 022913 (2007) , “Defects in hydrothermally grown bulk ZnO”, H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. DurbinHydrothermally grown bulk ZnO (Tokyo Denpa) was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20 eV, ideality factor of 1.04). Two main shallow defects, T1 and T2, with thermal activation energies of 13 and 52 meV, respectively, were... (Read more)
- 68. Appl. Phys. Lett. 90, 152108 (2007) , “Correlation between carrier recombination and p-type doping in P monodoped and In–P codoped ZnO epilayers”, J. D. Ye, S. L. Gu, F. Li, S. M. Zhu, R. Zhang, Y. Shi, Y. D. Zheng, X. W. Sun, G. Q. Lo, and D. L. KwongThe carrier recombination processes in p-type ZnO epilayers with P monodoping and In–P codoping have been studied by temperature-dependent photoluminescence spectroscopy. Good correlations were observed between carrier recombination and acceptor and donor energy levels. The exciton... (Read more)
- 69. Appl. Phys. Lett. 90, 152103 (2007) , “Ab initio studies of arsenic and boron related defects in silicon mesa diodes”, C. Janke, R. Jones, S. Öberg, and P. R. BriddonE centers are known to diffuse around 400 K in Si and may then form larger donor-vacancy defects such as As2V in heavily doped n-type Si doped with As or AsBV if they diffuse into p-type regions. Ab initio methods are used to explore these possibilities. The... (Read more)
- 70. Appl. Phys. Lett. 90, 142116 (2007) , “Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance”, K. Clémer, A. Stesmans, and V. V. Afanas'evElectron spin resonance analysis has detected a P-donor related point defect in nanometer-thick HfO2 films on (100)Si after annealing in the range of 500–900 °C. Based on the principal g matrix (axial; g=1.9965; g=1.9975) and hyperfine... (Read more)
- 71. Appl. Phys. Lett. 90, 123501 (2007) , “Deep level defects which limit current gain in 4H SiC bipolar junction transistors”, C. J. Cochrane, P. M. Lenahan, and A. J. LelisThe authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed... (Read more)
- 72. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more)
- 73. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more).inp files: PbTe | last update: Sergey V. Ovsyannikov
- 74. Appl. Phys. Lett. 90, 122101 (2007) , “Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact”, Q. L. Gu, C. C. Ling, X. D. Chen, C. K. Cheng, A. M. C. Ng, C. D. Beling, S. Fung, A. B. Djurišić, L. W. Lu, G. Brauer, and H. C. OngConversion of the Au/n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy.... (Read more)
- 75. Appl. Phys. Lett. 90, 112110 (2007) , “Alpha-particle irradiation-induced defects in n-type germanium”, Vl. Kolkovsky, M. Christian Petersen, and A. Nylandsted LarsenDeep level transient spectroscopy and high-resolution Laplace deep level transient spectroscopy were used to investigate alpha-particle irradiation-induced defects in n-type Ge. It is proposed that there is no electrically active divacancy level in the upper half of the band gap. A dominant... (Read more)
- 76. Appl. Phys. Lett. 90, 072905 (2007) , “Imaging deep trap distributions by low vacuum scanning electron microscopy”, Milos Toth, W. Ralph Knowles, and Matthew R. PhillipsThe distribution of deep traps in a bulk dielectric (Al2O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of... (Read more)
- 77. Appl. Phys. Lett. 90, 072107 (2007) , “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN”, J. Mimila-Arroyo, M. Barbé, F. Jomard, J. Chevallier, M. A. di Forte-Poisson, S. L. Delage, and C. Dua.Deuterium diffusion was achieved in nonintentionally doped n-GaN layers, grown by metal organic chemical vapor deposition, at 460 °C and a power density of 1.0 W cm−2. A deuterium diffusion mechanism was observed yielding concentrations around 1018 ... (Read more)
- 78. Appl. Phys. Lett. 90, 063103 (2007) , “Origin of the red luminescence band in photoluminescence spectra of ZnSe nanowires”, U. Philipose, S. Yang, T. Xu, and Harry E. RudaIn this work, the origin of the deep level, defect related photoluminescence emission band in ZnSe is investigated. Using the dependence of the peak energy on excitation intensity, it was shown to originate from donor-acceptor pair recombination. The binding energy of the donor-acceptor pair was... (Read more)
- 79. Appl. Phys. Lett. 90, 062116 (2007) , “Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation”, Liutauras Storasta and Hidekazu TsuchidaThe authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 °C or higher temperature. Reduction of... (Read more)
- 80. Appl. Phys. Lett. 90, 041910 (2007) , “Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing”, J. Tan, G. Davies, S. Hayama, and A. Nylandsted LarsenThe authors have investigated the effect of Ge concentration on the evolution of W optical center (W center) in Si-implanted epitaxial Si1−xGex at low temperature annealing. From the results of photoluminescence, the annealing behavior of... (Read more)
- 81. Appl. Phys. Lett. 90, 032906 (2007) , “Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems”, Ling Dai, V. B. C. Tan, Shuo-Wang Yang, Ping Wu, and Xian-Tong ChenIn ultralow-k dielectric systems, the porous dielectrics are normally sealed by a SiC film before the deposition of a Ta diffusion barrier layer. However, the Ta barrier effects are negated when the SiC films are fabricated by plasma-enhanced chemical vapor deposition (PECVD). Through large... (Read more)
- 82. Appl. Phys. Lett. 90, 032102 (2007) , “Dynamic nuclear polarization induced by hot electrons”, Yosuke Komori and Tohru OkamotoA method for local dynamic nuclear polarization is demonstrated in a GaAs/AlGaAs heterostructure at the Landau level filling factor ν=3. Using a narrow channel sample, where the width varies stepwise along the electron flow, the authors find that electron cooling (heating) causes the polarization... (Read more)
- 83. Appl. Phys. Lett. 90, 012107 (2007) , “Unambiguous identification of the PL-I9 line in zinc oxide”, S. Müller, D. Stichtenoth, M. Uhrmacher, H. Hofsäss, C. Ronning, and J. RöderRadioactive 111In atoms implanted into zinc oxide (ZnO) single crystals occupy substitutional Zn lattice sites after annealing to 700 °C. The respective photoluminescence (PL) spectra of the samples were monitored while the donor In decayed into stable and isolectronic Cd. The... (Read more)
- 84. Appl. Phys. Lett. 90, 011905 (2007) , “Dislocation junctions as barriers to threading dislocation migration”, Siu Sin Quek, Zhaoxuan Wu, Yong-Wei Zhang, Yang Xiang, and David J. SrolovitzLevel set simulations of dislocation dynamics in biaxially strained, heteroepitaxial films reveal interesting kinetic and thermodynamic mechanisms for blocking the migration of threading dislocations. Two dislocations on the same or on intersecting slip planes may react to form a threading... (Read more)
- 85. J. Appl. Phys. 102, 113702 (2007) , “Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy”, S. A. Reshanov and G. PenslThe effect of the Schottky barrier height on the detection of the concentration of midgap defects using deep level transient spectroscopy (DLTS) is experimentally and theoretically studied for EH6 and EH7 defects in 4H-SiC. In this special case, the DLTS signal height... (Read more)
- 86. J. Appl. Phys. 102, 093711 (2007) , “Deep level thermal evolution in Fe implanted InP”, Tiziana Cesca and Andrea GasparottoWe report on the thermal evolution of the deep levels in Fe implanted and annealed InP. The position and nature of the dominant traps have been assessed by current-voltage-temperature measurements analyzed in the framework of the space-charge-limited current model. For low temperature annealing the... (Read more)
- 87. J. Appl. Phys. 102, 093504 (2007) , “Recombination centers in as-grown and electron-irradiated ZnO substrates”, N. T. Son and I. G. IvanovOptical detection of magnetic resonance (ODMR) was used to study defects in ZnO substrates irradiated with 3 MeV electrons at room temperature. The Zn vacancy and some other ODMR centers were detected. Among these, the Zn vacancy and two other centers, labeled as LU3 and LU4, were also commonly... (Read more)
- 88. J. Appl. Phys. 102, 086107 (2007) , “Photoluminescence in phosphorous-implanted ZnO films”, Veeramuthu Vaithianathan, Shunichi Hishita, Jae Young Park, and Sang Sub KimZnO thin films prepared by pulsed laser deposition were implanted with phosphorous (P) using dose levels of 1012–1014 ions/cm2 at room temperature. The P-implanted films were subsequently annealed between 500 and 700 °C in oxygen ambient. The Hall effect... (Read more)
- 89. J. Appl. Phys. 102, 084505 (2007) , “Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams”, A. Uedono, K. Ito, H. Nakamori, K. Mori, Y. Nakano, T. Kachi, S. Ishibashi, T. Ohdaira, and R. SuzukiDefects in ion-implanted GaN and their annealing properties were studied by using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and the positron lifetimes were measured for Si+, O+, and Be+-implanted GaN grown by the... (Read more)
- 90. J. Appl. Phys. 102, 073521 (2007) , “Effect of point defects on copper-related deep levels in p-type Czochralski silicon”, Weiyan Wang, Deren Yang, Xuegong Yu, Xiangyang Ma, and Duanlin QueThe effect of point defects on the copper (Cu)-related deep levels in p-type Czochralski (Cz) silicon has been investigated. It was found that generally five deep levels Ev+0.14 eV, Ev+0.17 eV, Ev+0.32 eV,... (Read more)
- 91. J. Appl. Phys. 102, 063713 (2007) , “Peculiarities of neutron-transmutation phosphorous doping of 30Si enriched SiC crystals: Electron paramagnetic resonance study”, P. G. Baranov, B. Ya. Ber, I. V. Ilyin, A. N. Ionov, E. N. Mokhov, M. V. Muzafarova, M. A. Kaliteevskii, P. S. Kop'ev, A. K. Kaliteevskii, O. N. Godisov, and I. M. LazebnikWe have obtained a high concentration of P donor dopants in 6H-SiC enriched with 30Si and irradiated with thermal neutrons. It was established that annealing at a relatively low temperature of 1300 °C, i.e., 500–600 °C lower than that used for annealing SiC with the... (Read more)
- 92. J. Appl. Phys. 102, 024908 (2007) , “Nitrogen acceptors in bulk ZnO (000) substrates and homoepitaxial ZnO films”, B. T. Adekore, J. M. Pierce, R. F. Davis, D. W. Barlage, and J. F. MuthBulk single crystals of unintentionally doped ZnO having charge carrier concentration, ND−NA values of ~1017 cm−3 were implanted with N+ ions at dosages of 1015 and 1016 ... (Read more)
- 93. J. Appl. Phys. 102, 023522 (2007) , “Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation”, Q. T. Zhao, U. Breuer, St. Lenk, and S. MantlDiffusion of sulfur (S) in S+ ion implanted Si(100) was investigated after rapid thermal annealing as well as after nickel silicidation. At lower S doses, S segregates to the Si(100) surface when the defects created by the S implantation are reduced during annealing. If the S dose... (Read more)
- 94. J. Appl. Phys. 101, 124902 (2007) , “Origin of green luminescence of ZnO powders reacted with carbon black”, Yi Hu and H.-J. ChenZnO powders were synthesized by a precipitation method and annealed with carbon black. Electron paramagnetic resonance (EPR) and photoluminescence spectroscopies were conducted to study the characteristics of the ZnO powders. The g factor of the EPR signal shifted to lower value for the... (Read more)
- 95. J. Appl. Phys. 101, 113537 (2007) , “Reactions of interstitial carbon with impurities in silicon particle detectors”, L. F. Makarenko, M. Moll, F. P. Korshunov, and S. B. LastovskiWe present deep level transient spectroscopy (DLTS) data measured on very high resistivity n-type float-zone silicon detectors after irradiation with 6 MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to... (Read more)
- 96. J. Appl. Phys. 101, 113526 (2007) , “Thermal evolution of boron irradiation induced defects in predoped Si revealed by positron annihilation experiments”, P. M. G. Nambissan, P. V. Bhagwat, and M. B. KurupThe isochronal annealing behavior of high energy (25–72 MeV) boron ion irradiation induced defects in boron-doped silicon is monitored through measurements of positron lifetimes and three distinct defect-evolution stages are identified. The initial boron doping created a defect environment... (Read more)
- 97. J. Appl. Phys. 101, 103716 (2007) , “Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC”, Giovanni Alfieri and Tsunenobu Kimotop-type 4H-SiC epitaxial layers grown by chemical vapor deposition have been implanted with 200 and 100 keV protons at five different implantation temperatures. An isochronal annealing series was performed from 100 to 1800 °C, and Al-doped epitaxial layers have been... (Read more)
- 98. J. Appl. Phys. 101, 103704 (2007) , “Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers”, Katsunori Danno and Tsunenobu KimotoThe authors have investigated deep levels in as-grown and electron-irradiated p-type 4H-SiC epilayers by deep level transient spectroscopy. In as-grown epilayers, the D center and four deep levels are observed. In p-type 4H-SiC, reactive ion etching followed by thermal treatment (at... (Read more)
- 99. J. Appl. Phys. 101, 093706 (2007) , “Persistent photoinduced changes in charge states of transition-metal donors in hydrothermally grown ZnO crystals”, Yongquan Jiang, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to monitor photoinduced changes in the charge states of deep transition-metal donors (Mn, Fe, Co, and Ni), shallow donors (Al and Ga), and lithium acceptors in a hydrothermally grown ZnO crystal. All of these impurities except the lithium were... (Read more)
- 100. J. Appl. Phys. 101, 086106 (2007) , “Electron irradiation induced deep centers in hydrothermally grown ZnO”, Z.-Q. Fang, B. Claflin, D. C. Look, and G. C. FarlowAn n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ~108 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation... (Read more)
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