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- 1. Phys. Rev. B 24, 4571 (1981) , “Tellurium Donors in Silicon”, H. G. Grimmeiss, E. Janz?n, H. Ennen, O. Schirmer, J. Schneider, R. W?rner, C. Holm, E. Sirtl, P. Wagner.The electronic properties of chalcogens as dopants in silicon are discussed with emphasis on tellurium. Tellurium give rise to two dominant donor levels which have been studied by junction space-charge techniques, infrared absorption, and ESR. Both donor levels exhibit excited states (Rydberg series... (Read more)
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Updated at 2010-07-20 16:50:39
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