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- 1. Appl. Phys. Lett. 89, 092107 (2006) , “Photoluminescence studies of impurity transitions in AlGaN alloys”, N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centersisolated cation vacancy with three negative charges... (Read more)
- 2. J. Appl. Phys. 100, 123101 (2006) , “Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer”, Q. Sun, H. Wang, D. S. Jiang, R. Q. Jin, Y. Huang, S. M. Zhang, H. Yang, U. Jahn, and K. H. PloogThe deep level luminescence of crack-free Al0.25Ga0.75N layers grown on a GaN template with a high-temperature grown AlN interlayer has been studied using spatially resolved cathodoluminescence (CL) spectroscopy. The CL spectra of Al0.25Ga0.75N grown on a... (Read more)
- 3. J. Appl. Phys. 100, 013501 (2006) , “Contactless electromodulation spectroscopy of AlGaN/GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance”, R. Kudrawiec, M. Syperek, M. Motyka, J. Misiewicz, R. Paszkiewicz, B. Paszkiewicz, M. T?acza?aPhotoreflectance (PR) and contactless electroreflectance (CER) spectroscopies have been applied to study optical transitions in undoped and Si-doped AlGaN/GaN heterostructures at room temperature. Spectral features related to excitonic and band-to-band absorptions in GaN layer and band-to-band... (Read more)
- 4. Phys. Rev. B 63, 165204 (2001) , “g values of effective mass donors in AlxGa1-xN alloys”, M. W. Bayerl, M. S. Brandt, T. Graf, O. Ambacher, J. A. Majewski, M. Stutzmann, D. J. As, K. LischkaElectron spin resonance experiments were performed on Si-doped wurtzite and zinc-blende GaN and Si-doped wurtzite AlxGa1-xN alloys with x=0.15, 0.32, 0.52, 0.75, and 1. For zinc-blende GaN, an isotropic g factor of 1.9475 is found. The g tensors of the silicon effective mass... (Read more)
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Updated at 2010-07-20 16:50:39
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