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- 1. J. Appl. Phys. 100, 043505 (2006) , “Damage accumulation in neon implanted silicon”, E. Oliviero, S. Peripolli, L. Amaral, P. F. P. Fichtner, M. F. Beaufort, J. F. Barbot, and S. E. DonnellyDamage accumulation in neon-implanted silicon with fluences ranging from 5×1014 to 5×1016 Ne cm2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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