- 1. Phys. Rev. B 71, 115205 (2005) , “Origin of the 6885-cm–1 luminescence lines in ZnO: Vanadium versus copper”, L. S. Vlasenko, G. D. Watkins, R. HelbigOptical detection of electron paramagnetic resonance reveals the I=7/2 EPR spectrum of V2+ in the sharp photoluminescence (PL) lines often observed at ~6885 cm1 in ZnO, which have universally been assumed previously to arise from copper. An alternative model for... (Read more)
- 2. Spectrochim. Acta A. 61, 2595-2602 (2005) , “VO2+ ions in zinc lead borate glasses studied by EPR and optical absorption techniques”, P. Giri Prakash , J. Lakshmana RaoElectron paramagnetic resonance (EPR) and optical absorption spectra of vanadyl ions in zinc lead borate (ZnO–PbO–B2O3) glass system have been studied. EPR spectra of all the glass samples exhibit resonance signals characteristic of VO2+ ions. The values of spin-Hamiltonian parameters... (Read more)
- 3. Physica B 308-310, 691 (2001) , “Contactless studies of semi-insulating 4H–SiC”, W. E. Carlos, W. J. Moore, G. C. B Braga, J. A. Freitas, Jr. , E. R. Glaser and B. V. ShanabrookSemi-insulating (SI) silicon carbide is important for applications in high-power, high-frequency electronics, such as SiC MESFETs and GaN FETs. In this work, we discuss the use of low-temperature electron paramagnetic resonance (EPR), room- and low-temperature FTIR and photoluminescence as potential... (Read more)
- 4. Phys. Rev. B 37, 7268 (1988) , “Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR”, D. A. van Wezep, C. A. J. AmmerlaanThe electron-nuclear double-resonance spectra of interstitial 47Ti+ and 49Ti+ in silicon have been measured at 4.2 K. Spin Hamiltonians for these systems were determined and had to include hyperfine contributions of the type S3I and... (Read more)
- 5. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 6. Phys. Rev. B 4, 3250-3252 (1971) , “Spin-Hamiltonian Parameters and Spin-Orbit Coupling for V3+ in ZnO”, R. E. Coffman, Makram I. Himaya, Kathryn NyeuThe spin-Hamiltonian parameters for ZnO: V3+ have been refined using electron-paramagnetic-resonance (EPR) line position calculations. The principal sources of error are discussed. The accurate spin-Hamiltonian parameters are used to discuss the spin-orbit coupling within the 3d manifold... (Read more)
- 7. Phys. Rev. B 1, 1986-1994 (1970) , “Electron Paramagnetic Resonance of V3 + Ions in Zinc Oxide”, G. Filipovich, A. L. Taylor, R. E. CoffmanThe paramagnetic resonance of trace amounts of V3+ in single-crystal hexagonal zinc oxide is reported. The EPR spectrum is fitted with an axially symmetric spin Hamiltonian with five empirically determined parameters: D, gII, g?, A, and B. The spin-Hamiltonian... (Read more)
Updated at 2010-07-20 16:50:39