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- 1. Phys. Rev. B 71, 115205 (2005) , “Origin of the 6885-cm–1 luminescence lines in ZnO: Vanadium versus copper”, L. S. Vlasenko, G. D. Watkins, R. HelbigOptical detection of electron paramagnetic resonance reveals the I=7/2 EPR spectrum of V2+ in the sharp photoluminescence (PL) lines often observed at ~6885 cm1 in ZnO, which have universally been assumed previously to arise from copper. An alternative model for... (Read more)
- 2. Phys. Rev. B 69, 45207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 3. Mater. Sci. Eng. 93, 39-48 (2002) , “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. MolnarWe will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN single quantum well (SQW) light emitting diodes (LEDs) through magnetic resonance techniques. Electron paramagnetic resonance (EPR) and... (Read more)
- 4. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5?1018 to 5.0?1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
- 5. Phys. Rev. B 65, 125207 (2002) , “Optical detection of electron paramagnetic resonance in low-dislocation-content GaN grown by hydride vapor-phase epitaxy”, C. Bozdog, G. D. Watkins, H. Sunakawa, N. Kuroda, A. UsuiThree broad overlapping photoluminescence bands, centered at ?1.75?eV (red), ?2.2?eV (yellow), and ?2.33?eV (green), are observed in low-dislocation-content GaN grown by the hydride vapor-phase epitaxy method. Optical detection of electron paramagnetic resonance (ODEPR) studies reveal that each is... (Read more)
- 6. Phys. Rev. B 63, 165204 (2001) , “g values of effective mass donors in AlxGa1-xN alloys”, M. W. Bayerl, M. S. Brandt, T. Graf, O. Ambacher, J. A. Majewski, M. Stutzmann, D. J. As, K. LischkaElectron spin resonance experiments were performed on Si-doped wurtzite and zinc-blende GaN and Si-doped wurtzite AlxGa1-xN alloys with x=0.15, 0.32, 0.52, 0.75, and 1. For zinc-blende GaN, an isotropic g factor of 1.9475 is found. The g tensors of the silicon effective mass... (Read more)
- 7. Physica B 308-310, 51-57 (2001) , “Magnetic resonance studies of defects in GaN with reduced dislocation densities”, E. R. Glaser, J. A. Freitas, Jr. , G. C. Braga, W. E. Carlos, M. E. Twigg, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. Leszczynski, I. Grzegory, T. Suski, S. Porowski, S. S. Park, K. Y. Lee and R. J. MolnarMagnetic resonance experiments, including optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR), have been performed on Si-doped homoepitaxial GaN layers grown by MOCVD and on high quality, free-standing (200 μm-thick) GaN grown by HVPE. This allowed us to... (Read more)
- 8. Phys. Rev. Lett. 85, 2761 (2000) , “Detection of Interstitial Ga in GaN”, K. H. Chow, G. D. Watkins, Akira Usui, M. MizutaWe report the direct detection of interstitial Ga by optical detection of electron paramagnetic resonance (ODEPR) in the photoluminescence of n-type GaN after irradiation in situ at 4.2 K with 2.5 MeV electrons. It is stable upon annealing until room temperature, where it becomes mobile and trapped... (Read more)
- 9. Phys. Rev. B 59, 12479-12486 (1999) , “Optical detection of electron paramagnetic resonance in electron-irradiated GaN”, C. Bozdog, H. Przybylinska, G. D. Watkins, V. H?rle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, R. L. Henry2.5 MeV electron irradiation of wurtzite GaN epitaxially grown on sapphire substrates greatly reduces its near-UV and visible luminescence, producing two bands in the near infrared. In one of these, a broad structureless band centered at ∼0.95 eV, three optically detected S=1/2 electron... (Read more)GaN| ODMR PL electron-irradiation| 69Ga EM L1 L2 L3 L4 n-type semi-insulating .inp files: GaN/L3 GaN/L4 | last update: Takahide Umeda
- 10. J. Cryst. Growth 189-190, 561 (1998) , “Investigations of undoped and Mg-doped wurtzite GaN with luminescence-detected paramagnetic resonance in the 4 mm band”, F. K. Koschnick, K. Michael, J. -M. Spaeth, B. Beaumont, P. Gibart, J. Off, A. Sohmer and F. ScholzNominally undoped and Mg-doped wurtzite GaN grown with MOVPE on sapphire substrates were investigated with photoluminescence-detected electron paramagnetic resonance (PL-EPR). For enhanced resolution a microwave frequency of 72 GHz (V-band) was used. PL-EPR was measured via the yellow luminescence... (Read more)
- 11. Appl. Phys. Lett. 63, 2673 (1993) , “Observation of optically detected magnetic resonance in GaN films”, E. R. Glaser, T. A. Kennedy, H. C. Crookham, J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, J. N. KuzniaOptically detected magnetic resonance has been observed from GaN. Two magnetic resonances have been detected on the 2.2 eV-deep photoluminescence band. The first resonance is sharp [full width at half-maximum (FWHM) ~2.2 mT] with g=1.9515±0.0002 and... (Read more)
- 12. Phys. Rev. B 48, 15144-15147 (1993) , “Conduction-electron spin resonance in zinc-blende GaN thin films”, M. Fanciulli, T.Lei, T.D.MoustakasWe report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533±0.0008 independent of temperature, a Lorentzian line shape, and a linewidth (18 G at 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was... (Read more)
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