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- 1. Appl. Phys. Lett. 90, 074101 (2007) , “Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique”, B. Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, and Y. MorStacking fault generation within silicon germanium on insulator substrates fabricated by the Ge condensation technique has been evidenced by transmission electronic microscopy analyses for high Ge content enrichments (80%). This phenomenon is explained as a typical strain relaxation mechanism... (Read more)
- 2. J. Appl. Phys. 102, 013530 (2007) , “Fluorine-vacancy complexes in Si-SiGe-Si structures”, D. A. Abdulmalik, P. G. Coleman, H. A. W. El Mubarek, and P. AshburnFluorine-vacancy (FV) complexes have been directly observed in the Si0.94Ge0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffusion in the SiGe layer via... (Read more)
- 3. Phys. Rev. B 75, 144103 (2007) , “Multiscale modeling of point defects in Si-Ge(001) quantum wells”, B. Yang and V. K. TewaryA computationally efficient hybrid Green's function (GF) technique is developed for multiscale modeling of point defects in a trilayer lattice system that links seamlessly the length scales from lattice (subnanometers) to continuum (bulk). The model accounts for the discrete structure of the lattice... (Read more)
- 4. Phys. Rev. B 75, 075316 (2007) , “Theoretical investigation of a Mn-doped Si/Ge heterostructure”, J. T. Arantes, Antônio J. R. da Silva, A. Fazzio, and A. AntonelliWe investigate, through ab initio density-functional theory calculations, the electronic and structural properties of neutral Mn impurities at tetrahedral interstitial and substitutional sites in both Si and Ge layers of a Si/Ge heterostructure. We conclude that substitutional Mn at the Ge... (Read more)
- 5. Phys. Rev. B 75, 045201 (2007) , “Ab initio models of amorphous Si1−xGex:H”, T. A. Abtew and D. A. DraboldWe study the structural, dynamical, and electronic properties of amorphous Si1−xGex:H alloys using first-principles local basis molecular dynamics techniques. The network topology and defects in the amorphous network have been analyzed. Structural changes,... (Read more)
- 6. Appl. Phys. Lett. 89, 231906 (2006) , “Threading dislocation reduction by SiGeC domains in SiGe/SiGeC heterostructure: Role of pure edge dislocations”, L. H. Wong, C. Ferraris, C. C. Wong, and J. P. LiuThe authors previously reported an unusual phenomenon of strain relaxation accompanied by a reduction in threading dislocation density (TDD) on a Si0.77Ge0.23 layer grown on top of alternating layers of... (Read more)
- 7. Appl. Phys. Lett. 89, 041916 (2006) , “Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process”, Dong Wang, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, and Masahiko NakamaeCrystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5 °C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased... (Read more)
- 8. Appl. Phys. Lett. 88, 142112 (2006) , “Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys”, R. N. Pereira, B. Bech Nielsen, J. Coutinho, V. J. B. Torres, P. R. BriddonInfrared absorption spectroscopy and ab initio density functional modeling are used to investigate hydrogen defects that are stable at and above room temperature in proton-implanted Ge-rich SiGe alloys. We find that Si atoms are effective nucleation sites for hydrogen, leading to the... (Read more)
- 9. J. Appl. Phys. 100, 073511 (2006) , “Depth profiling of strain and defects in Si/Si1–xGex/Si heterostructures by micro-Raman imaging”, T. Mitani, S. Nakashima, H. Okumura, and A. OguraWe have reported depth and in-plane profiling of strain, Ge composition, and defects in strained-Si/Si1–xGex/Si heterostructures using micro-Raman imaging. Raman profiling in the depth direction was carried out with a depth resolution of ~15 nm using a... (Read more)
- 10. J. Appl. Phys. 99, 113531 (2006) , “High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects”, A. V. Darahanau, A. Benci, A. Y. Nikulin, J. Etheridge, J. Hester, and P. ZaumseilAn experimental-analytical technique for the model-independent nondestructive characterization of single-crystal alloys is applied to partially strain-compensated SiGe:C/Si single layer structures with high concentrations of Ge. The studies were performed on pre- and postannealed SiGe:C/Si samples.... (Read more)
- 11. Phys. Rev. B 74, 195204 (2006) , “Interaction of iron with the local environment in SiGe alloys investigated with Laplace transform deep level spectroscopy”, Vl. Kolkovsky, A. Mesli, L. Dobaczewski, N. V. Abrosimov, Z. R. ytkiewicz, and A. R. PeakerLaplace transform deep level transient spectroscopy (LDLTS) is used to investigate the alloy effects on iron related deep centers in Si1−xGex. A clear buildup of alloy disorder as a function of the germanium content has been observed for the isolated... (Read more)
- 12. Phys. Rev. Lett. 97, 066602 (2006) , “Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well”, Junya Matsunami, Mitsuaki Ooya, and Tohru OkamotoThe resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the... (Read more)
- 13. Phys. Rev. B 59, 13242 (1999) , “Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures ”, C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. SchfflerStrained Si/Si0.75Ge0.25 heterostructures, grown by solid source e-beam evaporation molecular-beam epitaxy on Si(100) substrates, have been studied by electrically detected magnetic resonance. Samples with a low-temperature mobility of about 105 cm2/V s... (Read more)
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