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1. Appl. Phys. Express 3, 051002 (2010) , “Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi Yamaguchi

A nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient spectroscopy and nitrogen concentration dependence of its density. It has a high capture cross section and not observed in N... (Read more)

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2. Appl. Phys. Express 3, 031103 (2010) , “High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates”, Seunghwan Park, Tsutomu Minegishi, Dongcheol Oh, Hyunjae Lee, Toshinori Taishi, Jinsub Park, Mina Jung, Jiho Chang, Inho Im, Junseok Ha, Soonku Hong, Ichiro Yonenaga, Toyohiro Chikyow, and Takafumi Yao

This article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4×10¹⁶ cm^-3, while ZnO:N shows n-type... (Read more)

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3. Jpn. J. Appl. Phys. 49, 071302 (2010) , “Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper”, Minoru Nakamura and Susumu Murakami

We have observed the formation of the Cu centers in p-type Si crystals diffused with dilute Cu between 400 and 1000 °C by deep-level transient spectroscopy (DLTS) and photoluminescence methods. For the samples diffused below 800 °C, a DLTS Cu center denoted as the Cu_DLB center was... (Read more)

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4. Jpn. J. Appl. Phys. 49, 05FE02 (2010) , “Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers”, Kiyoteru Kobayashi and Taketoshi Ide

The current conduction in silicon carbon nitride (SiCN) dielectric films subjected to ultraviolet (UV) illumination at room temperature has been investigated. After exposure of SiCN single-layer and SiCN–SiO₂ double-layer films to 4.9-eV UV illumination, leakage currents through... (Read more)

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5. Jpn. J. Appl. Phys. 49, 051001 (2010) , “Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi Yamaguchi

A nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination center. The level is found to be responsible for the reverse bias current in the depletion region of n-type GaAsN schottky... (Read more)

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6. Appl. Phys. Express 2, 091101 (2009) , “Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment”, Toru Hiyoshi and Tsunenobu Kimoto

By thermal oxidation of 4H-SiC at 1150–1300 °C, the Z_1/2 and EH_6/7 concentrations can be reduced to below 1×10¹¹ cm^-3. By the oxidation, however, a high concentration of HK0 center (E_V + 0.78 eV) is generated.... (Read more)

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7. Appl. Phys. Express 2, 041101 (2009) , “Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation”, Toru Hiyoshi and Tsunenobu Kimoto

Significant reduction of major deep levels in n-type 4H-SiC(0001) epilayers by means of thermal oxidation is demonstrated. By thermal oxidation of epilayers at 1150–1300 °C, the concentration of the Z_1/2 and EH_6/7 centers has been reduced from... (Read more)

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8. Appl. Phys. Lett. 94, 092105 (2009) , “Interaction of oxygen with thermally induced vacancies in Czochralski silicon”, V. Akhmetov, G. Kissinger, and W. von Ammon

Complexes consisting of a vacancy and four oxygen atoms, VO₄, were found in oxygen-rich Czochralski silicon wafers subjected to rapid thermal annealing (RTA) at 1250 °C for 30 s in Ar/O₂ atmosphere by means of Fourier transform infrared spectroscopy with enhanced... (Read more)

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9. Appl. Phys. Lett. 94, 091903 (2009) , “Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys”, M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. Jiang

Deep ultraviolet photoluminescence spectroscopy was employed to study the impurity transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was observed in Mg-doped Al_xGa_1−xN alloys, which was identified to have the same origin as the... (Read more)

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10. Appl. Phys. Lett. 94, 061910 (2009) , “Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy”, M. J. Wang, L. Yuan, C. C. Cheng, C. D. Beling, and K. J. Chen

Defect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (V_Ga) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180... (Read more)

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11. J. Appl. Phys. 105, 053709 (2009) , “Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, David D. Caudel, Pijush Bhattacharya, Arnold Burger, Krishna C. Mandal, D. Johnstone, and S. A. Payne

Deep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Three... (Read more)

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12. J. Appl. Phys. 105, 013504 (2009) , “Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices”, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Akio Takano, Kentarou Sawano, and Yasuhiro Shiraki

We investigated the contributions of neutral and charged silicon self-interstitials to self- and boron diffusion during transient enhanced diffusion in silicon. We simultaneously observed self- and boron diffusion in silicon using ^natSi/²⁸Si isotope superlattices. A calculation... (Read more)

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13. Jpn. J. Appl. Phys. 48, 081003 (2009) , “Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN”, Kuan-Ting Liu, Shoou-Jinn Chang, and Sean Wu

The effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant... (Read more)

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14. Jpn. J. Appl. Phys. 48, 031205 (2009) , “Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide”, Kazuhiro Mochizuki, Haruka Shimizu, and Natsuki Yokoyama

Reported profiles of high-temperature (500 °C)-implanted boron ions diffused in 4H-silicon carbide at 1200–1900 °C for 5–90 min were simulated through a “dual-sublattice” modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a... (Read more)

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15. Phys. Rev. B 79, 075207 (2009) , “EPR study of local symmetry sites of Ce³⁺ in Pb_1−xCe_xA (A=S, Se, and Te)”, X. Gratens, V. Bindilatti, V. A. Chitta, N. F. Oliveira, and Jr.

The local site symmetry of Ce³⁺ ions in the diluted magnetic semiconductors Pb_1−xCe_xA (A=S, Se, and Te) has been investigated by electron-paramagnetic resonance (EPR). The experiments were carried out on single crystals with cerium... (Read more)

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16. Phys. Rev. B 79, 075203 (2009) , “Hyperfine interaction in the ground state of the negatively charged nitrogen vacancy center in diamond”, S. Felton, A. M. Edmonds, and M. E. Newton

The ¹⁴N, ¹⁵N, and ¹³C hyperfine interactions in the ground state of the negatively charged nitrogen vacancy (NV⁻) center have been investigated using electron-paramagnetic-resonance spectroscopy. The previously published parameters for the... (Read more)

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17. Phys. Rev. B 79, 075201 (2009) , “First-principles studies of small arsenic interstitial complexes in crystalline silicon”, Yonghyun Kim, Taras A. Kirichenko, Ning Kong, Graeme Henkelman, and Sanjay K. Banerjee

We present a first-principles study of the structure and dynamics of small As-interstitial complexes (AsI₂, As₂I₂, AsI₃, and As₂I₃) in crystalline Si. These complexes can be important components of stable As-interstitial clusters or... (Read more)

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18. Phys. Rev. B 79, 014102 (2009) , “Vacancy defect positron lifetimes in strontium titanate”, R. A. Mackie, S. Singh, J. Laverock, S. B. Dugdale, and D. J. Keeble

The results of positron-annihilation lifetime spectroscopy measurements on undoped, electron-irradiated, and Nb-doped SrTiO₃ single crystals are reported. Perfect lattice and vacancy defect positron lifetimes were calculated using two different first-principles schemes. The Sr-vacancy... (Read more)

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19. Phys. Rev. Lett. 102, 075506 (2009) , “Proton Tunneling: A Decay Channel of the O-H Stretch Mode in KTaO₃”, E. J. Spahr, L. Wen, M. Stavola, L. A. Boatner, L. C. Feldman, N. H. Tolk, and G. Lüpke

The vibrational lifetimes of the O-H and O-D stretch modes in the perovskite oxide KTaO3 are measured by pump-probe infrared spectroscopy. Both stretch modes are exceptionally long lived and exhibit a large “reverse” isotope effect, due to a phonon-assisted proton-tunneling process, which involves the O-Ta-O bending motion. The excited-state tunneling rate is found to be 7 orders of magnitude larger than from the ground state in the proton conducting oxide, BaCeO3 [Phys. Rev. B 60, R3713 (1999)]. (Read more)

KTaO3| IR optical-spectroscopy| Hydrogen O-H | last update: Erik Spahr
20. Phys. Rev. Lett. 102, 065502 (2009) , “Transition Metal Impurities on the Bond-Centered Site in Germanium”, S. Decoster, S. Cottenier, B. De Vries, H. Emmerich, U. Wahl, J. G. Correia, and A. Vantomme

We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the... (Read more)

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21. Angew. Chem. Int. Ed. 47, (2008) , Wily , “Ag@AgCl: A Highly Efficient and Stable Photocatalyst Active under Visible Light”, PengWang, Baibiao Huang,* Xiaoyan Qin, Xiaoyang Zhang, Ying Dai, JiyongWei, and Myung-Hwan Whangbo

(Read more)

AgCl| X-ray photocatalysis | last update: Baibiao Huang
22. Appl. Phys. Lett. 93, 152108 (2008) , “Internal gettering of iron in multicrystalline silicon at low temperature”, Rafael Krain, Sandra Herlufsen, and Jan Schmidt

The interstitial iron concentration in multicrystalline silicon wafers, determined from recombination lifetime measurements, is effectively reduced by annealing the wafers at very low temperature (300–500 °C). During annealing, the iron concentration decreases by more than one order of... (Read more)

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23. Appl. Phys. Lett. 93, 141907 (2008) , “Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge”, S. Decoster, B. De Vries, U. Wahl, J. G. Correia, and A. Vantomme

We report on an emission channeling study of the lattice site location of implanted Er in Ge together with its thermal stability. We found direct experimental evidence of Er atoms located on the tetrahedral (T) interstitial site and on the bond-centered (BC) site, with a maximum total occupancy... (Read more)

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24. Appl. Phys. Lett. 93, 113504 (2008) , “Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode”, Hisashi Shima, Fumiyoshi Takano, Hidenobu Muramatsu, Hiro Akinaga, Yukio Tamai, Isao H. Inque, and Hidenori Takagi,

Structural and resistance switching properties were investigated in the CoO resistance random access memory (RRAM) with the Ta electrode. The intermediate layer consisting of Co and Ta oxides was confirmed at the interface by the transmission electron microscopy and electron energy loss... (Read more)

CoO| HREM/TEM electrical-meas.| Cobalt Oxygen Tantalum device dielectric nanostructure | last update: Takahide Umeda
25. Appl. Phys. Lett. 93, 103505 (2008) , “Misfit point defects at the epitaxial Lu₂O₃/(111)Si interface revealed by electron spin resonance”, A. Stesmans, P. Somers, V. V. Afanas'ev, W. Tian, L. F. Edge, and D. G. Schlom

Electron spin resonance study on heteroepitaxial Si/insulator structures obtained through the growth of epi-Lu₂O₃ films on (111)Si (~4.5 % mismatched) by reactive molecular beam epitaxy indicates the presence in the as-grown state of interfacial P_b... (Read more)

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26. Appl. Phys. Lett. 93, 072102 (2008) , AIP , “Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor”, L. H. Willems van Beveren, H. Huebl, D. R. McCamey, T. Duty, A. J. Ferguson, R. G. Clark, and M. S. Brandt

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At millikelvin temperatures, continuous wave spectra were obtained up to 40 ... (Read more)

SiO2| EDMR| device .inp files: Si/Phosphorus/P.inp | last update: Laurens Willems van Beveren
27. Appl. Phys. Lett. 93, 032108 (2008) , “High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC”, Giovanni Alfieri and Tsunenobu Kimoto

We report on the thermal stability of deep levels detected after 1 MeV electron irradiated p-type 6H-SiC. The investigation was performed by deep level transient spectroscopy, and an isochronal annealing series was carried out in the 373–2073 K temperature range. We found seven... (Read more)

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28. Appl. Phys. Lett. 92, 222109 (2008) , “Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction”, Q. L. Gu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa, Y. F. Hsu, A. B. Djurišić, C. Y. Zhu, S. Fung, and L. W. Lu

Nitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N⁺ implantation and... (Read more)

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29. Appl. Phys. Lett. 92, 142105 (2008) , “Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC”, J. Wong-Leung and B. G. Svensson

High-purity and low-doped n-type epitaxial layers of 4H-SiC have been implanted with N and C ions by using energies in the MeV range and doses from 2×10⁸ to 1×10⁹ cm⁻². Postimplant annealing was performed at 1100 °C prior to... (Read more)

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30. Appl. Phys. Lett. 92, 132104 (2008) , “Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory”, Y. J. Seo, K. C. Kim, and T. G. Kim

The origin of the electron memory trap in an oxide-nitride-oxide structure deposited on n-type Si is investigated by both capacitance-voltage and deep level transient spectroscopy (DLTS). Two electron traps are observed near 0.27 and 0.54 eV, below the conduction band minimum of Si and are... (Read more)

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31. Appl. Phys. Lett. 92, 132102 (2008) , “On the identity of a crucial defect contributing to leakage current in silicon particle detectors”, J. H. Bleka, L. Murin, E. V. Monakhov, B. S. Avset, and B. G. Svensson

The annealing kinetics of the so-called E4/E5 center or E4a/E4b center in electron-irradiated Si particle detectors has been studied at four different temperatures from 23 to 65 °C using deep-level transient spectroscopy (DLTS). The center gives rise to two energy levels at 0.37 and 0.45 eV... (Read more)

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32. J. Appl. Phys. 104, 093711 (2008) , “Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes”, G. Izzo, G. Litrico, L. Calcagno, G. Foti, and F. La Via

The changes in the electrical properties of 4H-SiC epitaxial layer induced by irradiation with 7.0 MeV C⁺ ions were investigated by current-voltage measurements and deep level transient spectroscopy (DLTS). Current-voltage characteristics of the diodes fabricated from epilayers... (Read more)

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33. J. Appl. Phys. 104, 093521 (2008) , “Native defects and oxygen and hydrogen-related defect complexes in CdTe: Density functional calculations”, Mao-Hua Du, Hiroyuki Takenaka, and David J. Singh

We study structural and electronic properties of various intrinsic and extrinsic defects in CdTe based on first-principles calculations. The focus is given to the role of these defects in the carrier compensation in semi-insulating CdTe, which is essential for the CdTe-based radiation detectors. The... (Read more)

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34. J. Appl. Phys. 104, 083702 (2008) , “A bistable divacancylike defect in silicon damage cascades”, R. M. Fleming, C. H. Seager, D. V. Lang, E. Bielejec, and J. M. Campbell

Two deep level transient spectroscopy (DLTS) electron emission signatures, previously labeled E4 and E5, have been shown to be bistable with respect to minority carrier injection at room temperature. These result from two charge state transitions of the same defect. We have performed DLTS... (Read more)

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35. J. Appl. Phys. 104, 054110 (2008) , “The effect of implanting boron on the optical absorption and electron paramagnetic resonance spectra of silica”, R. H. Magruder, III, A. Stesmans, R. A. Weeks,, and R. A. Weller

Silica samples (type III, Corning 7940) were implanted with B using multiple energies to produce a layer ~600 nm thick in which the concentration of B ranged from 0.034 to 2.04 at. %. Optical absorption spectra were measured from 1.8 to 6.5 eV. Electron paramagnetic resonance (EPR) measurements... (Read more)

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36. J. Appl. Phys. 104, 043702 (2008) , “Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation”, Hideharu Matsuura, Nobumasa Minohara, and Takeshi Ohshima

The hole concentration in Al-doped p-type 4H-SiC was found to be significantly reduced by electron irradiation when compared to the hole concentration in Al-doped p-type Si; this is an unexpected result. The temperature dependence of the hole concentration p(T) in... (Read more)

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37. J. Appl. Phys. 104, 023705 (2008) , “Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium”, E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, and P. Clauws

Deep levels have been studied in n-type germanium subjected to Co, Fe, Cu, Cr, and Pt germanidation in the temperature range between 300 and 700 °C by deep-level transient spectroscopy (DLTS). It is shown that most DLTS peaks can be assigned to acceptor levels of substitutional metal... (Read more)

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38. J. Appl. Phys. 104, 014106 (2008) , “Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1−xO2 / (100)Si interfaces”, P. T. Chen, B. B. Triplett, J. J. Chambers, L. Colombo, P. C. McIntyre, and Y. Nishi

This study reports on the first experimental observations of electrically biased paramagnetic defects at 800 °C N₂ annealed Hf_xSi_1−xO₂ (x=0.4, and 0.6)/(100)Si and HfO₂/(100)Si interfaces in metal oxide silicon... (Read more)

HfO2, HfSiO2| CV ESR HREM/TEM| Si-H Si-O Si-Si amorphous device dielectric interface .inp files: Si | last update: Takahide Umeda
39. J. Appl. Phys. 103, 123709 (2008) , “Optical detection of magnetic resonance and electron paramagnetic resonance study of the oxygen vacancy and lead donors in ZnO”, R. Laiho, L. S. Vlasenko, and M. P. Vlasenko

Optical detection of magnetic resonance (ODMR) and electron paramagnetic resonance (EPR) spectra are investigated in ZnO single crystals. The strong negative ODMR line with axial symmetry of the g-tensor around the c axis with g=2.0133±0.0001 and... (Read more)

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40. J. Appl. Phys. 103, 104505 (2008) , “Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam”, A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo, and S. Ishibashi

A relationship between intra-4f transitions of Er and vacancy-type defects in Er-doped GaN was studied by using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured for Er-doped GaN grown by molecular beam epitaxy. A clear correlation between... (Read more)

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41. J. Appl. Phys. 103, 094901 (2008) , “Investigation of the origin of deep levels in CdTe doped with Bi”, E. Saucedo, J. Franc, H. Elhadidy, P. Horodysky, C. M. Ruiz, V. Bermúdez, and N. V. Sochinskii

Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of... (Read more)

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42. J. Appl. Phys. 103, 093701 (2008) , “Characterization of plasma etching damage on p-type GaN using Schottky diodes”, M. Kato, K. Mikamo, M. Ichimura, M. Kanechika, O. Ishiguro, and T. Kachi

The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of... (Read more)

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43. J. Appl. Phys. 103, 073716 (2008) , “Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures”, Jinggang Lu, Yongkook Park, and George A. Rozgonyi

Three SiGe/Si heterostructures with different Ge contents have been examined by deep level transient spectroscopy (DLTS) and capacitance-voltage techniques. DLTS revealed a broad band of traps from 80 to 250 K in the as-grown samples. Arrhenius plots of a 25% SiGe sample revealed three trap... (Read more)

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44. J. Appl. Phys. 103, 044505 (2008) , “Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors”, J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan

We utilize a combination of DC gate-controlled diode recombination current measurements as well as two very sensitive electrically detected magnetic resonance techniques, spin-dependent recombination and spin-dependent tunneling, to identify atomic-scale defects involved in the negative bias... (Read more)

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45. J. Appl. Phys. 103, 043710 (2008) , “Further characterization of oxygen vacancies and zinc vacancies in electron-irradiated ZnO”, S. M. Evans, N. C. Giles, L. E. Halliburton, and L. A. Kappers

Electron paramagnetic resonance (EPR) has been used to monitor oxygen vacancies and zinc vacancies in a ZnO crystal irradiated near room temperature with 1.5 MeV electrons. Out-of-phase detection at 30 K greatly enhances the EPR signals from these vacancies. Following the electron irradiation, but... (Read more)

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46. J. Appl. Phys. 103, 033701 (2008) , “Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO₂/4H-SiC”, X. D. Chen, S. Dhar, T. Isaacs-Smith, J. R. Williams, L. C. Feldman, and P. M. Mooney

Postoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at SiO₂/4H-SiC interfaces. Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealed SiO₂/4H-SiC interfaces were performed using... (Read more)

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47. J. Appl. Phys. 103, 013710 (2008) , “Acceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, Ryan Dupere, and Arnold Burger

Deep-acceptor levels associated with indium in indium-doped GaSe crystals have been measured. High-quality Schottky diodes of GaSe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Four DLTS peaks at 127, 160, 248, and... (Read more)

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48. J.Am.Chem.Soc. 130, 48 (2008) , ACS , “Enhanced Ferromagnetism and Tunable Saturation Magnetization of Mn/C Codoped GaN Nanostructures Synthesized by Carbothermal Nitridation”, Zeyan Wang, Baibiao Huang, Lin Yu, Ying Dai, Peng Wang, Xiaoyan Qin, Xiaoyang Zhang, Jiyong Wei, Jie Zhan, Xiangyang Jing, Haixia Liu, and Myung-Hwan Whangbo

Mn/C-codoped GaN nanostructures were synthesized by carbothermal nitridation with active charcoal as the carbon source. Nanostructures such as zigzag nanowires and nanoscrews were observed by varying the reaction time and the C/Ga molar ratio of the starting material used for the synthesis. The structures and morphologies of the as-grown samples were characterized by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy measurements. The doping of both Mn and C in the GaN matrix was confirmed by X-ray photoelectron spectroscopy measurements, and the ferromagnetic properties of Mn/C-codoped GaN samples were confirmed by room-temperature magnetization measurements. The saturation magnetization of Mn/C-codoped GaN increases steadily with increasing C/Ga molar ratio of the starting material at a rate of ~0.023 emu/g per C/Ga molar ratio, and the ferromagnetism of Mn/C-codoped GaN can be stronger than that of Mn-doped GaN by a factor of ~40. A plausible growth mechanism was proposed, and the role of carbon codoping in tuning the morphology and ferromagnetic property was discussed. Our work suggests that carbon doping in the GaN matrix favors the N sites over the Ga sites, Mn/C-codoping in the GaN matrix is energetically favorable, and the C-codoping strongly enhances the preference of the FM coupling to the AFM coupling between the two doped Mn sites. These suggestions were probed on the basis of first-principles density functional theory electronic structure calculations for a number of model doped structures constructed with a 32-atom 2 × 2 × 2 supercell. (Read more)

GaN| HREM/TEM Theory X-ray XPS/UPS/Auger galanomagnetic optical-spectroscopy thermal-meas./anneal-exp. thermomagnetic| 3.0eV~ C-C C2p Ga-N Ga-O Ga3d Manganese Mn3d N-O N1s antiferromagnetic exchange-effect ferromagnetic magnetoresistance .inp files: GaN | last update: Takashi Fukushima
49. Phys. Rev. B 78, 235204 (2008) , “Symmetry of the phosphorus donor in diamond from first principles”, Bozidar Butorac and Alison Mainwood

Phosphorus is the only donor in diamond which can be used technologically. Several ab initio theoretical models have been published on substitutional phosphorus, and most of them have predicted that it should have tetrahedral or trigonal symmetry. Recent ab initio calculations... (Read more)

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50. Phys. Rev. B 78, 235203 (2008) , “Electron paramagnetic resonance of sulfur at a split-vacancy site in diamond”, J. M. Baker

In natural diamonds a sulfur-related paramagnetic center labeled W31 has been previously tentatively assigned to an interstitial sulfur species in a positive charge state. However, we show by combining an assessment of available experimental data and density-functional simulations that the hyperfine... (Read more)

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51. Phys. Rev. B 78, 233201 (2008) , “Gallium interstitial in irradiated germanium: Deep level transient spectroscopy”, Vl. Kolkovsky, M. Christian Petersen, A. Mesli, J. Van Gheluwe, P. Clauws, and A. Nylandsted Larsen

Two electronic levels at 0.34 eV above the valence band and 0.32 eV below the conduction band, in gallium doped, p-type Ge irradiated with 2 MeV electrons have been studied by deep level transient spectroscopy (DLTS) with both majority- and minority-carrier injections, and Laplace DLTS... (Read more)

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52. Phys. Rev. B 78, 113202 (2008) , “Two FeH pairs in n-type Si and their implications: A theoretical study”, N. Gonzalez Szwacki, M. Sanati, and S. K. Estreicher

Experimental evidence for interstitial {FeH} pairs in n-type Si stems from thermally stimulated capacitance (TSCAP). Electron-paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first... (Read more)

| last update: System Account
53. Phys. Rev. B 78, 085214 (2008) , “First-principles study of native defects in CdGeAs₂”, Tula R. Paudel and Walter R. L. Lambrecht

First-principles results are presented for various native defects in CdGeAs₂ as function of the relevant elements' chemical potentials. The defect formation energies were calculated using fully relaxed 64 atom supercells by means of the full-potential linearized muffin-tin orbital... (Read more)

| last update: System Account
54. Phys. Rev. B 78, 085205 (2008) , “Formation and origin of the dominating electron trap in irradiated p-type silicon”, Lasse Vines, E. V. Monakhov, A. Yu. Kuznetsov, R. Kozowski, P. Kaminski, and B. G. Svensson

Deep level transient spectroscopy and minority-carrier transient spectroscopy (MCTS) have been applied to study electron-irradiated and proton-irradiated p-type Si samples with boron concentrations in the range of 6×10¹³−2×10¹⁵ cm⁻³.... (Read more)

| last update: System Account
55. Phys. Rev. B 78, 085202 (2008) , “Evolution of vacancy-related defects upon annealing of ion-implanted germanium”, J. Slotte, M. Rummukainen, F. Tuomisto, V. P. Markevich, A. R. Peaker, C. Jeynes, and R. M. Gwilliam

Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×10¹² cm⁻² and 4×10¹⁴ ... (Read more)

| last update: System Account
56. Phys. Rev. B 78, 035125 (2008) , “Mechanisms of electrical isolation in O⁺-irradiated ZnO”, A. Zubiaga, F. Tuomisto, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, and M. Yano

We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O⁺ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are... (Read more)

| last update: System Account
57. Phys. Rev. B 78, 033202 (2008) , “Divacancy clustering in neutron-irradiated and annealed n-type germanium”, K. Kuitunen, F. Tuomisto, J. Slotte, and I. Capan

We have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation, the Sb-doped samples [(Sb)=1.5×10¹⁵ cm⁻³] were annealed at 473, 673, and 773 K for 30 min. The positron lifetime was measured as a function of temperature... (Read more)

| last update: System Account
58. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. Sullivan

A rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)

SiC| PL electron-irradiation optical-microscope/SEM thermal-meas./anneal-exp.| (C2)si (C3)si 0-0.1eV 0.1-0.5eV 2.0eV~ C-C Carbon Ci Csi DI V1/2/3 [(C2)si]2 aggregate antisite cluster(>3) complex(=3) interstitial n-type p-type pair(=2) | last update: Takahide Umeda
59. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. Wellmann

This paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)

SiC| PL electron-irradiation optical-microscope/SEM thermal-meas./anneal-exp.| (C2)si 0(neutral) 0.1-0.5eV 13C 2.0eV~ C-C Carbon Ci Csi DI T1 T2 T3 T4 antisite interstitial n-type p-type pair(=2) triplet | last update: Takahide Umeda
60. Phys. Rev. B 77, 155214 (2008) , “Optical absorption and electron paramagnetic resonance of the Ealpha^[prime]" align="middle"> center in amorphous silicon dioxide”, G. Buscarino, R. Boscaino, S. Agnello, and F. M. Gelardi

We report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the Ealpha^[prime]" align="middle"> point defect in amorphous silicon dioxide (a-SiO₂). This defect has been studied in β-ray irradiated and... (Read more)

| last update: System Account
61. Phys. Rev. B 77, 085120 (2008) , “Identification of the carbon antisite in SiC: EPR of ¹³C enriched crystals”, Pavel G. Baranov, Ivan V. Ilyin, Alexandra A. Soltamova, and Eugene N. Mokhov

An electron paramagnetic resonance spectrum with axial symmetry along c axis, spin S=1/2 and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed 6H-SiC, ¹³C isotope enriched. The ¹³C concentration was... (Read more)

SiC| EPR neutron-irradiation thermal-meas./anneal-exp.| 13C C3v Carbon Csi antisite intrinsic sp2 .inp files: SiC/Baranov/Baranov_g.inp SiC/Baranov/Baranov_c.inp | last update: Takahide Umeda
62. Phys. Rev. B 77, 081201(R) (2008) , “Electron paramagnetic resonance studies of the neutral nitrogen vacancy in diamond”, S. Felton, A. M. Edmonds, M. E. Newton, P. M. Martineau, D. Fisher, and D. J. Twitchen

Despite the numerous experimental and theoretical studies on the negatively charged nitrogen vacancy center (NV⁻) in diamond and the predictions that the neutral nitrogen vacancy center (NV⁰) should have an S= ground state, NV⁰ has not previously been... (Read more)

| last update: System Account
63. Phys. Rev. B 77, 073206 (2008) , “Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon”, J. H. Bleka, I. Pintilie, E. V. Monakhov, B. S. Avset, and B. G. Svensson

In hydrogenated high-purity Si, the vacancy-oxygen (VO) center is shown to anneal already at temperatures below 200 °C and is replaced by a center, identified as a vacancy-oxygen-hydrogen complex, with an energy level 0.37 eV below the conduction-band edge and a rather low thermal... (Read more)

| last update: System Account
64. Phys. Rev. B 77, 045204 (2008) , “Vacancy clustering and acceptor activation in nitrogen-implanted ZnO”, Thomas Moe Børseth, Filip Tuomisto, Jens S. Christensen, Edouard V. Monakhov, Bengt G. Svensson, and Andrej Yu. Kuznetsov

The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220 keV N implantation using... (Read more)

| last update: System Account
65. Phys. Rev. B 77, 035201 (2008) , “Native defect properties and p-type doping efficiency in group-IIA doped wurtzite AlN”, Yong Zhang, Wen Liu and Hanben Niu

Using the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p-type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that... (Read more)

| last update: System Account
66. Phys. Rev. Lett. 101, 247604 (2008) , “Measurement of Cu(II) Copper Defect Dipoles in Ferroelectric PbTiO₃ Using Electron-Nuclear Double Resonance”, R. R. Garipov, J.-M. Spaeth, and D. J. Keeble

Point defects associated with Cu(II) in ferroelectric PbTiO₃ were determined using pulsed electron-nuclear double resonance (ENDOR). Three centers were observed, and neighbor ²⁰⁷Pb superhyperfine tensors to the third shell of equivalent Pb ions measured. The ENDOR angular... (Read more)

| last update: System Account
67. Phys. Rev. Lett. 101, 177204 (2008) , “Diffusion of Interstitial Mn in the Dilute Magnetic Semiconductor (Ga,Mn)As: The Effect of a Charge State”, V. I. Baykov, P. A. Korzhavyi, and B. Johansson

Migration barriers for diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As are studied using first-principles calculations. The diffusion pathway goes through two types of interstitial sites: As coordinated and Ga coordinated. The energy profile along the path is found to... (Read more)

| last update: System Account
68. Phys. Rev. Lett. 100, 026803 (2008) , “Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks”, A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, and H. Wiggers

We have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of... (Read more)

| last update: System Account
69. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. Ohshima

The structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the ²⁹Si/¹³C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)

Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
70. Appl. Phys. Lett. 91, 202111 (2007) , “Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC”, N. T. Son, P. Carlsson, A. Gällström, B. Magnusson, and E. Janzén

Electron paramagnetic resonance was used to study semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range of 5.5×10¹⁵–1.1×10¹⁷ cm⁻³. Our results show that the electrical activation of V is low and hence only in... (Read more)

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71. Appl. Phys. Lett. 91, 152102 (2007) , “N–O related shallow donors in silicon: Stoichiometry investigations”, H. E. Wagner, H. Ch. Alt, W. von Ammon, F. Bittersberger, A. Huber, and L. Koester

For clarification of the unknown chemical composition of the electrically active N–O defects in silicon, an ingot with variable oxygen content and fixed nitrogen concentration was investigated by infrared spectroscopy. Shallow donor spectra taken at different sample positions, i.e., oxygen... (Read more)

| last update: System Account
72. Appl. Phys. Lett. 91, 142101 (2007) , “Dangling-bond defects and hydrogen passivation in germanium”, J. R. Weber, A. Janotti, P. Rinke, and C. G. Van de Walle

The application of germanium in complementary metal-oxide semiconductor technology is hampered by high interface-state densities. Using first-principles calculations, we investigate the effects of dangling bonds (DBs) and their interaction with hydrogen. We find that Ge DBs give rise to electronic... (Read more)

| last update: System Account
73. Appl. Phys. Lett. 91, 133507 (2007) , “Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices”, J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan

We utilize a very sensitive electron spin resonance technique called spin-dependent tunneling to identify defect centers involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors. The defect's ²⁹Si hyperfine... (Read more)

Si Si3N4 SiO2| EDMR electric-field-effect electrical-meas. thermal-meas./anneal-exp.| 29Si K NRTI Nitrogen Silicon dangling-bond device interface p-type | last update: Takashi Fukushima
74. Appl. Phys. Lett. 91, 132105 (2007) , “Shallow acceptors in GaN”, T. A. G. Eberlein, R. Jones, S. Öberg, and P. R. Briddon

Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that C_N is the most... (Read more)

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75. Appl. Phys. Lett. 91, 122109 (2007) , “Determining the defect parameters of the deep aluminum-related defect center in silicon”, Philipp Rosenits, Thomas Roth, Stefan W. Glunz, and Svetlana Beljakowa

Through a combined application of two characterization methods, deep-level transient spectroscopy and lifetime spectroscopy, the lifetime-limiting defect level in intentionally aluminum-contaminated Czochralski silicon has been analyzed and a complete set of defect parameters could be obtained. This... (Read more)

Si| DLTS electrical-meas.| 0.1-0.5eV Al-O Aluminium Oxygen pair(=2) | last update: Takahide Umeda
76. Appl. Phys. Lett. 91, 104105 (2007) , “Identification of defects in Y₃Al₅O₁₂ crystals by positron annihilation spectroscopy”, F. A. Selim, D. Solodovnikov, M. H. Weber, and K. G. Lynn

Positron annihilation, thermoluminescence, and optical absorption measurements were applied with the aid of several annealing and diffusion procedures to investigate the nature of point defects in Y₃Al₅O₁₂ (YAG) single crystals. By annealing at 1500 °C in air or... (Read more)

| last update: System Account
77. Appl. Phys. Lett. 91, 092107 (2007) , “Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN”, O. Lopatiuk-Tirpak, L. Chernyak, Y. L. Wang, F. Ren, S. J. Pearton, and K. Gartsman

The electron irradiation-induced increase of minority carrier diffusion length was studied as a function of hole concentration in Mg-doped GaN. Variable-temperature electron beam induced current measurements yielded activation energies of 264, 254, 171, and 144 meV for samples with hole... (Read more)

| last update: System Account
78. Appl. Phys. Lett. 91, 043503 (2007) , “Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN”, Aurangzeb Khan, J. Gou, M. Imazumi, and M. Yamaguchi

The authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron... (Read more)

| last update: System Account
79. Appl. Phys. Lett. 91, 022913 (2007) , “Defects in hydrothermally grown bulk ZnO”, H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. Durbin

Hydrothermally grown bulk ZnO (Tokyo Denpa) was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20 eV, ideality factor of 1.04). Two main shallow defects, T1 and T2, with thermal activation energies of 13 and 52 meV, respectively, were... (Read more)

| last update: System Account
80. Appl. Phys. Lett. 90, 152108 (2007) , “Correlation between carrier recombination and p-type doping in P monodoped and In–P codoped ZnO epilayers”, J. D. Ye, S. L. Gu, F. Li, S. M. Zhu, R. Zhang, Y. Shi, Y. D. Zheng, X. W. Sun, G. Q. Lo, and D. L. Kwong

The carrier recombination processes in p-type ZnO epilayers with P monodoping and In–P codoping have been studied by temperature-dependent photoluminescence spectroscopy. Good correlations were observed between carrier recombination and acceptor and donor energy levels. The exciton... (Read more)

| last update: System Account
81. Appl. Phys. Lett. 90, 152103 (2007) , “Ab initio studies of arsenic and boron related defects in silicon mesa diodes”, C. Janke, R. Jones, S. Öberg, and P. R. Briddon

E centers are known to diffuse around 400 K in Si and may then form larger donor-vacancy defects such as As₂V in heavily doped n-type Si doped with As or AsBV if they diffuse into p-type regions. Ab initio methods are used to explore these possibilities. The... (Read more)

| last update: System Account
82. Appl. Phys. Lett. 90, 142116 (2007) , “Observation of a P-associated defect in HfO₂ nanolayers on (100)Si by electron spin resonance”, K. Clémer, A. Stesmans, and V. V. Afanas'ev

Electron spin resonance analysis has detected a P-donor related point defect in nanometer-thick HfO₂ films on (100)Si after annealing in the range of 500–900 °C. Based on the principal g matrix (axial; g=1.9965; g=1.9975) and hyperfine... (Read more)

| last update: System Account
83. Appl. Phys. Lett. 90, 123502 (2007) , “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”,

The authors combine metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO₂ pMOS field effect... (Read more)

HfO2, Si SiO2| EDMR electric-field-effect electrical-meas. thermal-meas./anneal-exp.| K NRTI Pb0 Pb1 Silicon device dielectric interface p-type | last update: Takashi Fukushima
84. Appl. Phys. Lett. 90, 123501 (2007) , “Deep level defects which limit current gain in 4H SiC bipolar junction transistors”, C. J. Cochrane, P. M. Lenahan, and A. J. Lelis

The authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed... (Read more)

| last update: System Account
85. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. Shchennikov

The variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb_0.55Te_0.45, p-Pb_1−xSn_xTe_1−y, p-PbSe, and p-PbS) at room... (Read more)

| Thermoelectric/Seebeck .inp files: PbTe | last update: Sergey V. Ovsyannikov
86. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. Shchennikov

The variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb_0.55Te_0.45, p-Pb_1−xSn_xTe_1−y, p-PbSe, and p-PbS) at room... (Read more)

.inp files: PbTe | last update: Sergey V. Ovsyannikov
87. Appl. Phys. Lett. 90, 122101 (2007) , “Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact”, Q. L. Gu, C. C. Ling, X. D. Chen, C. K. Cheng, A. M. C. Ng, C. D. Beling, S. Fung, A. B. Djurišić, L. W. Lu, G. Brauer, and H. C. Ong

Conversion of the Au/n-ZnO contact from Ohmic to rectifying with H₂O₂ pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy.... (Read more)

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88. Appl. Phys. Lett. 90, 112110 (2007) , “Alpha-particle irradiation-induced defects in n-type germanium”, Vl. Kolkovsky, M. Christian Petersen, and A. Nylandsted Larsen

Deep level transient spectroscopy and high-resolution Laplace deep level transient spectroscopy were used to investigate alpha-particle irradiation-induced defects in n-type Ge. It is proposed that there is no electrically active divacancy level in the upper half of the band gap. A dominant... (Read more)

| last update: System Account
89. Appl. Phys. Lett. 90, 074101 (2007) , “Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique”, B. Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, and Y. Mor

Stacking fault generation within silicon germanium on insulator substrates fabricated by the Ge condensation technique has been evidenced by transmission electronic microscopy analyses for high Ge content enrichments (80%). This phenomenon is explained as a typical strain relaxation mechanism... (Read more)

SOI SiGe| mechanical-meas.| extended-defect stacking-fault | last update: Takao Imai
90. Appl. Phys. Lett. 90, 073507 (2007) , “Fermi-level pinning at polycrystalline silicon-HfO₂ interface as a source of drain and gate current 1/f noise”, P. Magnone, F. Crupi, L. Pantisano, and C. Pace

The impact of a submonolayer of HfO₂ sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline... (Read more)

HfO2 Si| electric-field-effect electrical-meas.| device dielectric interface micro/nanocrystal | last update: Takao Imai
91. Appl. Phys. Lett. 90, 072905 (2007) , “Imaging deep trap distributions by low vacuum scanning electron microscopy”, Milos Toth, W. Ralph Knowles, and Matthew R. Phillips

The distribution of deep traps in a bulk dielectric (Al₂O₃) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of... (Read more)

| optical-microscope/SEM | last update: Takao Imai
92. Appl. Phys. Lett. 90, 072502 (2007) , “Effect of oxygen vacancies on spin-dependent tunneling in Fe/MgO/Fe magnetic tunnel junctions”, J. P. Velev, K. D. Belashchenko, S. S. Jaswal, and E. Y. Tsymbal

First-principles calculations based on density functional theory are used to elucidate the effect of O vacancies, forming F centers, on spin-dependent tunneling in Fe/MgO/Fe(001) magnetic tunnel junctions. O vacancies produce occupied localized s states and unoccupied resonant p... (Read more)

MgO| electrical-meas.| Oxygen Vo insulator vacancy | last update: Takao Imai
93. Appl. Phys. Lett. 90, 072107 (2007) , “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN”, J. Mimila-Arroyo, M. Barbé, F. Jomard, J. Chevallier, M. A. di Forte-Poisson, S. L. Delage, and C. Dua.

Deuterium diffusion was achieved in nonintentionally doped n-GaN layers, grown by metal organic chemical vapor deposition, at 460 °C and a power density of 1.0 W cm⁻². A deuterium diffusion mechanism was observed yielding concentrations around 10¹⁸ ... (Read more)

| last update: System Account
94. Appl. Phys. Lett. 90, 063103 (2007) , “Origin of the red luminescence band in photoluminescence spectra of ZnSe nanowires”, U. Philipose, S. Yang, T. Xu, and Harry E. Ruda

In this work, the origin of the deep level, defect related photoluminescence emission band in ZnSe is investigated. Using the dependence of the peak energy on excitation intensity, it was shown to originate from donor-acceptor pair recombination. The binding energy of the donor-acceptor pair was... (Read more)

| last update: System Account
95. Appl. Phys. Lett. 90, 062116 (2007) , “Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation”, Liutauras Storasta and Hidekazu Tsuchida

The authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 °C or higher temperature. Reduction of... (Read more)

| last update: System Account
96. Appl. Phys. Lett. 90, 062113 (2007) , “Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers”, I. Pintilie, U. Grossner, B. G. Svensson, K. Irmscher, and B. Thomas

Nitrogen doped 4H-SiC epitaxial layers were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons. The influence of C/Si ratio, N doping level, and growth rate on the behavior of the prominent Z_1,2 and EH_6,7 levels during... (Read more)

SiC| EPR | last update: Takao Imai
97. Appl. Phys. Lett. 90, 052901 (2007) , “Process-dependent defects in Si/HfO₂/Mo gate oxide heterostructures”, S. Walsh, L. Fang, J. K. Schaeffer, E. Weisbrod, and L. J. Brillson

The authors have used low energy electron-excited nanoscale-depth-resolved spectroscopy to probe the bulk and interface defect states of ultrathin Mo/HfO₂/Si with conventional process sequences. Multiple deep level emissions are evident below the 5.9 eV HfO₂ near band edge,... (Read more)

HfO2| device dielectric | last update: Takao Imai
98. Appl. Phys. Lett. 90, 051902 (2007) , “Recombination processes in undoped and rare-earth doped MAl₂O₄ (M=Ca,Sr) persistent phosphors investigated by optically detected magnetic resonance”, Stefan Schweizer, Bastian Henke, Uldis Rogulis, and William M. Yen

The authors present magneto-optical measurements on single-crystal MAl₂O₄ (M=Ca and Sr) persistent phosphors that are nominally pure or doped with Eu and Nd or Dy, respectively. Their recombination luminescence (RL) and microwave-induced changes in the RL in a... (Read more)

Al2O3| ODMR| Gallium Strontium | last update: Takao Imai
99. Appl. Phys. Lett. 90, 042105 (2007) , “Stress induced leakage current mechanism in thin Hf-silicate layers”, A. Paskaleva, M. Lemberger, and A. J. Bauer

Stress induced leakage current (SILC) in thin Hf-silicate layers and the mechanisms of its creation are examined. A very strong polarity and thickness dependence as well as partial recovery of SILC are observed. It is suggested that the trapping in preexisting sites influences SILC by two ways: (1)... (Read more)

HfO2| Theory electric-field-effect| dielectric | last update: Takao Imai
100. Appl. Phys. Lett. 90, 041910 (2007) , “Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing”, J. Tan, G. Davies, S. Hayama, and A. Nylandsted Larsen

The authors have investigated the effect of Ge concentration on the evolution of W optical center (W center) in Si-implanted epitaxial Si_1−xGe_x at low temperature annealing. From the results of photoluminescence, the annealing behavior of... (Read more)

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Materials (111 tags)

219

286

GaN

851

238

SiC

183

SiO2

139

ZnO

Others(101 tags)

Ali

AlN

B2O

BTO

CaO

CdO

CdS

CoO

GaP

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TiO

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WO3

Technique (46 tags)

electric-field-effect

118

1058

EPR

ESR

105

optical-microscope/SEM

PAS

111

stress/pressure_effects

261

Theory

128

thermal-meas./anneal-exp.

Thermoelectric/Seebeck

thermomagnetic

X-ray

XPS/UPS/Auger

Details (591 tags)

Bond(35 tags)

B-D

B-F

B-H

B-O

C-C

C-D

C-H

C=C

H-H

N-H

N-N

N-O

O-H

O-O

P-O

sp2

sp3

V-H

Charge(9 tags)

+4(more)

-1

-2

-3

-4(more)

0(neutral)

Defect(antisite)(6 tags)

Asga

Csi

Gaas

Sic

Zno

Defect(interstitial)(18 tags)

Ali

Asi

Cli

Coi

Gai

Hfi

Mni

Pbi

Sii

Tii

Zni

Defect(vacancy)(15 tags)

Vas

Vcl

Vga

Vge

Vin

Vna

Vpb

Vsi

Vzn

Defect-type(19 tags)

111

256

Element(65 tags)

131

142

165

234

Tin

Energy(8 tags)

Isotope(56 tags)

6Li

7Be

7Li

10B

11B

12C

13C

14N

15N

16O

17O

18F

18O

31P

32P

33S

51V

Label(303 tags)

A10

A11

A13

A14

A15

A16

A17

A18

A109

AA1

AA2

AA3

AA4

AA5

AA6

AA7

AA8

AA9

AB1

AB2

AB3

AB4

BOHC

C60

D0X

DE1/2/3/4

DH1/2/3/4

DII

DK1

DK2

DK3

DK4

E''

ED1

ED2

ED3

EH1

EH2

EH3

EH4

EH5

EH6/7

EI1

EI2

EI3

EI4

EI5/6

EI7

EL2

EL3

EL6

F+

FnVm

G10

G11

G12

G13

G14

G15

G16

G17

G18

G19

G21

G23

G24

G25

G26

G28

G29

HT5

HTC

KC1

KC2

KR1

KY1

Ky1/2/3

L10

L11

L12

M1/M2

ME1

ND1

NIRIM1

NIRIM2

NL3

NL8

NL9

NV1

NV2

NV3

ODC

ODC(I)

ODC(II)

OH-

OHC

Oi-

Os1

OS1

Os2

P4+

P6/7

P12

PA1

Pb0

Pb1

PbC

PK1

PK2

PK4

PO4

POHC

POR

Ps0

Ps1

PV1

RD4

S1a

S1b

SI1

SI2

SI3

SI4

SI5

SI7

SI8

SI9

SL1

SL2

SL5

SO4

STE

STH

TDD

Tv1/3a

Tv2a

UD1

UD2

UD3

VH0

Orbital(11 tags)

C2p

N1s

O1s

O2s

Si2p

Zn2p

Sample(17 tags)

132

113

134

198

160

Size(4 tags)

155

Spin(8 tags)

Symmetry(15 tags)

C1h

C2h

C2v

C3v

cubic

D2d

D3d

unbundled(2 tags)

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