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- 1. Appl. Phys. Lett. 88, 233113 (2006) , “Strain relaxation and induced defects in InAsSb self-assembled quantum dots”, J. F. Chen, R. S. Hsiao, W. D. Huang, Y. H. Wu, L. Chang, J. S. Wang, J. Y. ChiThe onset of strain relaxation and induced defects in InAs0.94Sb0.06 quantum dots are investigated. We show that the relaxation causes partial carrier depletion in the dots and drastic carrier depletion in the top GaAs layer due to the introduction of two defect traps at 0.35... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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