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- 1. Solid State Commun. 37, 371 (1981) , “A New EPR Center Due to Dislocations in Phosphorous Doped Silicon”, E. Weber and H. AlexanderIn plastically deformed, phosphorous doped silicon a new EPR center is found, Si-K7, which has to be ascribed to an impurity related defect in the dislocation core. From its concentration the accumulation of impurity atoms, supposedly phosphorous, in the dislocation core can be concluded. (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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