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Editing Log
. Appl. Phys. Lett. 89, 142909 (2006) , “Fluorine passivation in poly-Si/TaN/HfO2 through ion implantation”, M. H. Zhang, F. Zhu, T. Lee, H. S. Kim, I. J. Ok, G. Thareja, L. Yu, and Jack C. Lee
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Updated at 2010-07-20 16:50:39
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Charge(9 tags)
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Defect(antisite)(6 tags)
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Label(303 tags)
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⚠ Our services moved from http://www.kc.tsukuba.ac.jp/div-media/... to http://esrlab.bk.tsukuba.ac.jp/div-media/... in January 2018. The functions of the our services are unchanged. Thank you.