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- 1. phys. stat. sol. (a) 55, 251 (1979) , “Photo-EPR of Dislocations in Silicon”, R. Erdmann, H. Alexander.The dependence of the EPR spectrum of dislocations in deformed silicon on illumination with monochromatic light reveals the two EPR centers Si - K1 (S < 1/2) to be different ionization states of one and the same dislocation center. The energy level separating these ionization states lies near the... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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