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- 1. Appl. Phys. Lett. 88, 261102 (2006) , “Light-emitting defects and epitaxy in alkali-ion-implanted α quartz”, J. Keinonen, S. Gsiorek, P. K. Sahoo, S. Dhar, and K. P. LiebLight-emitting centers in alkali-ion-implanted quartz have been investigated with respect to the solid phase epitaxial growth of the ion irradiation induced amorphous zone. Cathodoluminescence was studied under the conditions of chemical epitaxy in annealing the samples, implanted with... (Read more)
- 2. Phys. Rev. Lett. 89, 256102 (2002) , “Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide”, I. C. Vickridge, I. Trimaille, J.-J. Ganem, S. Rigo, C. Radtke, I. J. R. Baumvol, F. C. StedileThermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the thermal growth of silicon oxide films on Si. Results demonstrate that... (Read more)
- 3. J. Appl. Phys. 89, 5997-6001 (2001) , “Oxygen Recoil Implant from SiO2 Layers into Single-Crystalline Silicon”, G. Wang, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch, P. Merrill, R. Bleiler.It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted... (Read more)
- 4. Phys. Rev. Lett. 87, 235501 (2001) , “Thermal Double Donors and Quantum Dots”, J. Coutinho, R. Jones, L. I. Murin, V. P. Markevich, J. L. Lindstr?m, S. ?berg, P. R. Briddon.Combined local mode spectroscopy and ab initio modeling are used to demonstrate for the first time that oxygen atoms in thermal double donors (TDD) in Si are in close proximity. The observed vibrational modes in 16O, 18O, and mixed isotopic samples are consistent with a model... (Read more)
- 5. Appl. Phys. Lett. 46, 787 (1985) , “Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon”, N. M. Johnson and M. D. MoyerIt was recently proposed that hydrogen compensation of shallow-acceptor impurities in single-crystal silicon is due to the diffusion of both monatomic oxygen and hydrogen into silicon which combine at acceptor sites to form neutral acceptor-OH complexes. It is shown here that oxygen does not diffuse... (Read more)
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Updated at 2010-07-20 16:50:39
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