Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 201. Phys. Rev. B 75, 045429 (2007) , “Electron spin relaxation in semiconducting carbon nanotubes: The role of hyperfine interaction”, Y. G. Semenov, K. W. Kim, and G. J. IafrateA theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of 13C isotopes. It is shown that strong radial confinement of electrons enhances the electron-nuclear overlap and subsequently... (Read more)
- 202. Phys. Rev. B 75, 045301 (2007) , “Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement”, Mamadou Diarra, Yann-Michel Niquet, Christophe Delerue, and Guy AllanCalculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with... (Read more)
- 203. Phys. Rev. B 75, 045211 (2007) , “Ab initio supercell calculations on aluminum-related defects in SiC”, A. Gali, T. Hornos, N. T. Son, E. Janzén, and W. J. ChoykeAb initio supercell calculations of the binding energies predict complex formation between aluminum and carbon interstitials in SiC. In high-energy implanted SiC aluminum acceptor can form very stable complexes with two carbon interstitials. We also show that carbon vacancy can be attached to... (Read more)
- 204. Phys. Rev. B 75, 045210 (2007) , “Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon”, K. Kuitunen, K. Saarinen, and F. TuomistoWe have measured positron lifetime and Doppler broadening in highly As-doped silicon containing thermally generated V-As3 defect complexes (vacancy is surrounded by three arsenic atoms). We observe positron detrapping from the V-As3 defect complex and determine... (Read more)
- 205. Phys. Rev. B 75, 045201 (2007) , “Ab initio models of amorphous Si1−xGex:H”, T. A. Abtew and D. A. DraboldWe study the structural, dynamical, and electronic properties of amorphous Si1−xGex:H alloys using first-principles local basis molecular dynamics techniques. The network topology and defects in the amorphous network have been analyzed. Structural changes,... (Read more)
- 206. Phys. Rev. B 75, 045107 (2007) , “Multiband effects in the electron spin resonance of Gd3+ in the intermediate-valence compound YbAl3 and its reference compound LuAl3”, R. R. Urbano, E. M. Bittar, M. A. Pires, L. Mendonça Ferreira, L. Bufaiçal, C. Rettori, P. G. Pagliuso, B. Magill, S. B. Oseroff, J. D. Thompson, and J. L. SarraoElectron spin resonance (ESR) results of Gd3+ in YbAl3 and LuAl3 are analyzed using a multiband (f-, d-, and p-type) model of correlated conduction electrons. The need for a multiband analysis of our results is based on the following... (Read more)
- 207. Phys. Rev. B 75, 035322 (2007) , “Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN (100) surface”, Q. Wang, Q. Sun, and P. JenaFirst principles calculations based on gradient corrected density functional theory have been carried out to study the magnetic coupling between Mn atoms in pure and carbon doped Ga1−xMnxN thin films. We show that the ground state of Mn-doped GaN (100) thin... (Read more)
- 208. Phys. Rev. B 75, 035309 (2007) , “Role of hydrogen in hydrogen-induced layer exfoliation of germanium”, J. M. Zahler, A. Fontcuberta i Morral, M. J. Griggs, Harry A. Atwater, and Y. J. ChabalThe role of hydrogen in the exfoliation of Ge is studied using cross-sectional transmission electron microscopy, atomic force microscopy, and multiple-internal transmission mode Fourier-transform infrared absorption spectroscopy and compared with the mechanism in silicon. A qualitative model for the... (Read more)
- 209. Phys. Rev. B 75, 035211 (2007) , “Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon”, H. Bracht, H. H. Silvestri, I. D. Sharp, and E. E. HallerWe report the diffusion of boron, arsenic, and phosphorus in silicon isotope multilayer structures at temperatures between 850 °C and 1100 °C. The diffusion of all dopants and self-atoms at a given temperature is modeled with the same setting of all native-point-defect-related parameters.... (Read more)
- 210. Phys. Rev. B 75, 035210 (2007) , “Self- and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations”, H. BrachtDopant diffusion experiments in semiconductors yield the mobility of the element of interest and information about the possible mechanisms of atomic diffusion. In many cases the diffusion is described on the basis of Fick's law of diffusion, but this treatment is often too simple. In this paper,... (Read more)
- 211. Phys. Rev. B 75, 033303 (2007) , “Excitons in silicon nanocrystallites: The nature of luminescence”, Eleonora Luppi, Federico Iori, Rita Magri, Olivia Pulci, Stefano Ossicini, Elena Degoli, and Valerio OlevanoThe absorption and emission spectra of silicon nanocrystals up to 1 nm diameter have been calculated within a first-principles framework. Our calculations include geometry optimization and the many-body effects induced by the creation of an electron-hole pair. Starting from hydrogenated silicon... (Read more)
- 212. Phys. Rev. B 75, 033301 (2007) , “Microscopic evidence for evolution of superconductivity by effective carrier doping in boron-doped diamond: 11B-NMR study”, H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, T. Oguchi, and H. KawaradaWe have investigated the superconductivity discovered in boron-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower... (Read more)
- 213. Phys. Rev. B 75, 024205 (2007) , “Mechanical strength and coordination defects in compressed silica glass: Molecular dynamics simulations”, Yunfeng Liang, Caetano R. Miranda, and Sandro ScandoloContrary to ordinary solids, which are normally known to harden by compression, the compressibility of SiO2 (silica) glass has a maximum at about 2–4 GPa and its mechanical strength shows a minimum around 10 GPa. At this pressure, the compression of silica glass undergoes a change... (Read more)
- 214. Phys. Rev. B 75, 024109 (2007) , “Optical and EPR properties of point defects at a crystalline silica surface: Ab initio embedded-cluster calculations”, L. Giordano, P. V. Sushko, G. Pacchioni, and A. L. ShlugerWe have studied the structure and spectroscopic properties of the paramagnetic nonbridging oxygen hole center and of the Egamma[prime]" align="middle"> center at the hydroxylated silica surfaces using density functional theory and an embedded-cluster model. To investigate the... (Read more)
- 215. Phys. Rev. B 75, 014111 (2007) , “Effects of vacancies on the properties of disordered ferroelectrics: A first-principles study”, L. Bellaiche, Jorge Íñiguez, Eric Cockayne, and B. P. BurtonA first-principles-based model is developed to investigate the influence of lead vacancies on the properties of the disordered Pb(Sc1/2Nb1/2)O3 (PSN) ferroelectric. Lead vacancies generate large, inhomogeneous, electric fields that reduce barriers between energy... (Read more)
- 216. Phys. Rev. B 75, 014102 (2007) , “First-principles study of vacancy formation in hydroxyapatite”, Katsuyuki Matsunaga and Akihide KuwabaraFirst-principles plane-wave calculations were performed for hydroxyapatite (HAp) in order to investigate the electronic structure and vacancy formation mechanisms. The HAp unit cell contains PO4 tetrahedra and OH groups formed by covalent P-O and H-O bonds. Ca ions play a role for... (Read more)
- 217. Phys. Rev. Lett. 99, 175502 (2007) , “Self-Interstitial in Germanium”, A. Carvalho, R. Jones, C. Janke, J. P. Goss, P. R. Briddon, J. Coutinho, and S. ÖbergLow-temperature radiation damage in n- and p-type Ge is strikingly different, reflecting the charge-dependent properties of vacancies and self-interstitials. We find, using density functional theory, that in Ge the interstitial is bistable, preferring a split configuration when neutral... (Read more)
- 218. Phys. Rev. Lett. 99, 136801 (2007) , “Electron Trapping at Point Defects on Hydroxylated Silica Surfaces”, Livia Giordano, Peter V. Sushko, Gianfranco Pacchioni, and Alexander L. ShlugerThe origin of electron trapping and negative charging of hydroxylated silica surfaces is predicted based on accurate quantum-mechanical calculations. The calculated electron affinities of the two dominant neutral paramagnetic defects, the nonbridging oxygen center, Si-O•, and the... (Read more)
- 219. Phys. Rev. Lett. 99, 085502 (2007) , “Nature of Native Defects in ZnO”, F. A. Selim, M. H. Weber, D. Solodovnikov, and K. G. LynnThis study revealed the nature of native defects and their roles in ZnO through positron annihilation and optical transmission measurements. It showed oxygen vacancies are the origin for the shift in the optical absorption band that causes the red or orange coloration. It also revealed experimental... (Read more)
- 220. Phys. Rev. Lett. 98, 265502 (2007) , “Monovacancy and Interstitial Migration in Ion-Implanted Silicon”, P. G. Coleman and C. P. BurrowsThe migration of monovacancies (V0) and self-interstitials (I) has been observed in ion-implanted low-doped float-zone silicon by variable-energy positron annihilation spectroscopy. V0 and I were created by the in situ implantation of ~20 keV... (Read more)
- 221. Phys. Rev. Lett. 98, 252501 (2007) , “Radioactive Decay Speedup at T=5 K: Electron-Capture Decay Rate of 7Be Encapsulated in C60”, T. Ohtsuki, K. Ohno, T. Morisato, T. Mitsugashira, K. Hirose, H. Yuki, and J. KasagiThe electron-capture (EC) decay rate of 7Be in C60 at the temperature of liquid helium (T=5 K) was measured and compared with the rate in Be metal at T=293 K. We found that the half-life of 7Be in endohedral C60... (Read more)
- 222. Phys. Rev. Lett. 98, 227401 (2007) , “Formation of Hydrogen Impurity States in Silicon and Insulators at Low Implantation Energies”, T. Prokscha, E. Morenzoni, D. G. Eshchenko, N. Garifianov, H. Glückler, R. Khasanov, H. Luetkens, and A. SuterThe formation of hydrogenlike muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz, and sapphire. By varying the initial energy of positive muons... (Read more)
- 223. Phys. Rev. Lett. 98, 220501 (2007) , “Efficient Dynamic Nuclear Polarization at High Magnetic Fields”, Gavin W. Morley, Johan van Tol, Arzhang Ardavan, Kyriakos Porfyrakis, Jinying Zhang, and G. Andrew D. BriggsBy applying a new technique for dynamic nuclear polarization involving simultaneous excitation of electronic and nuclear transitions, we have enhanced the nuclear polarization of the nitrogen nuclei in 15N@C60 by a factor of 103 at a fixed temperature of 3 K and a... (Read more)
- 224. Phys. Rev. Lett. 98, 216803 (2007) , “High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality, and Perspectives”, G. Herranz, M. Basletić, M. Bibes, C. Carrétéro, E. Tafra, E. Jacquet, K. Bouzehouane, C. Deranlot, A. Hamzić, J.-M. Broto, A. Barthélémy, and A. FertWe have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures... (Read more)
- 225. Phys. Rev. Lett. 98, 216601 (2007) , “Room Temperature Electrical Detection of Spin Coherence in C60”, W. Harneit, C. Boehme, S. Schaefer, K. Huebener, K. Fostiropoulos, and K. LipsAn experimental demonstration of electrical detection of coherent spin motion of weakly coupled, localized electron spins in thin fullerene C60 films at room temperature is presented. Pulsed electrically detected magnetic resonance experiments on vertical photocurrents through... (Read more)
- 226. Phys. Rev. Lett. 98, 216103 (2007) , “Influence of Cumulenic Chains on the Vibrational and Electronic Properties of sp-sp2 Amorphous Carbon”, L. Ravagnan, P. Piseri, M. Bruzzi, S. Miglio, G. Bongiorno, A. Baserga, C. S. Casari, A. Li Bassi, C. Lenardi, Y. Yamaguchi, T. Wakabayashi, C. E. Bottani, and P. MilaniWe report the production and characterization of a form of amorphous carbon with sp-sp2 hybridization (atomic fraction of sp hybridized species 20%) where the predominant sp bonding appears to be (=C=C=)n cumulene.... (Read more)
- 227. Phys. Rev. Lett. 98, 215503 (2007) , “Nature of the Bound States of Molecular Hydrogen in Carbon Nanohorns”, F. Fernandez-Alonso, F. J. Bermejo, C. Cabrillo, R. O. Loutfy, V. Leon, and M. L. SaboungiThe effects of confining molecular hydrogen within carbon nanohorns are studied via high-resolution quasielastic and inelastic neutron spectroscopies. Both sets of data are remarkably different from those obtained in bulk samples in the liquid and crystalline states. At temperatures where bulk... (Read more)
- 228. Phys. Rev. Lett. 98, 206406 (2007) , “Role of Intermolecular Coupling in the Photophysics of Disordered Organic Semiconductors: Aggregate Emission in Regioregular Polythiophene”, Jenny Clark, Carlos Silva, Richard H. Friend, and Frank C. SpanoWe address the role of excitonic coupling on the nature of photoexcitations in the conjugated polymer regioregular poly(3-hexylthiophene). By means of temperature-dependent absorption and photoluminescence spectroscopy, we show that optical emission is overwhelmingly dominated by weakly coupled H... (Read more)
- 229. Phys. Rev. Lett. 98, 206403 (2007) , “H-Induced Dangling Bonds in H–Isoelectronic-Impurity Complexes Formed in GaAs1-yNy Alloys”, A. Amore Bonapasta, F. Filippone, and G. MattioliComplexes formed by H and the isoelectronic impurity N in GaAs1-yNy alloys have been widely investigated because the significant effects of N on the GaAs properties and their passivation by H represent a unique tool for a defect engineering of semiconductors.... (Read more)
- 230. Phys. Rev. Lett. 98, 196802 (2007) , “Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping”, Wolter Siemons, Gertjan Koster, Hideki Yamamoto, Walter A. Harrison, Gerald Lucovsky, Theodore H. Geballe, Dave H. A. Blank, and Malcolm R. BeasleyAs discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies... (Read more)
- 231. Phys. Rev. Lett. 98, 196101 (2007) , “Oxygen Vacancies in High Dielectric Constant Oxide-Semiconductor Films”, Supratik Guha and Vijay NarayananWe provide evidence that the oxygen vacancy is a dominant intrinsic electronic defect in nanometer scaled hafnium oxide dielectric films on silicon, relevant to microelectronics technology. We demonstrate this by developing a general model for the kinetics of oxygen vacancy formation in... (Read more)
- 232. Phys. Rev. Lett. 98, 186804 (2007) , “Room-Temperature Electron Spin Dynamics in Free-Standing ZnO Quantum Dots”, William K. Liu, Kelly M. Whitaker, Alyssa L. Smith, Kevin R. Kittilstved, Bruce H. Robinson, and Daniel R. GamelinConduction band electrons in colloidal ZnO quantum dots have been prepared photochemically and examined by electron paramagnetic resonance spectroscopy. Nanocrystals of 4.6 nm diameter containing single S-shell conduction band electrons have g*=1.962 and a room-temperature... (Read more)
- 233. Phys. Rev. Lett. 98, 185501 (2007) , “Enhanced Ductile Behavior of Tensile-Elongated Individual Double-Walled and Triple-Walled Carbon Nanotubes at High Temperatures”, J. Y. Huang, S. Chen, Z. F. Ren, Z. Wang, K. Kempa, M. J. Naughton, G. Chen, and M. S. DresselhausWe report exceptional ductile behavior in individual double-walled and triple-walled carbon nanotubes at temperatures above 2000 °C, with tensile elongation of 190% and diameter reduction of 90%, during in situ tensile-loading experiments conducted inside a high-resolution transmission... (Read more)
- 234. Phys. Rev. Lett. 98, 146403 (2007) , “Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides”, Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. IgnatievElectric-pulse induced resistance hysteresis switching loops for Pr0.7Ca0.3MnO3 perovskite oxide films were found to exhibit an additional sharp “shuttle tail” peak around the negative pulse maximum for films deposited in an oxygen-deficient ambient. The... (Read more)
- 235. Phys. Rev. Lett. 98, 137202 (2007) , “Magnetizing Oxides by Substituting Nitrogen for Oxygen”, I. S. Elfimov, A. Rusydi, S. I. Csiszar, Z. Hu, H. H. Hsieh, H.-J. Lin, C. T. Chen, R. Liang, and G. A. SawatzkyWe describe a possible pathway to new magnetic materials with no conventional magnetic elements present. The substitution of nitrogen for oxygen in simple nonmagnetic oxides leads to holes in N 2p states which form local magnetic moments. Because of the very large Hund's rule coupling of... (Read more)
- 236. Phys. Rev. Lett. 98, 135506 (2007) , “Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors”, Yanfa Yan, Jingbo Li, Su-Huai Wei, and M. M. Al-JassimThe asymmetry doping problem has severely hindered the potential applications of many wideband gap (WBG) materials. Here, we propose a possible approach to overcome this long-standing doping asymmetry problem for WBG semiconductors. Our approach is based on the reduction of the ionization energies... (Read more)
- 237. Phys. Rev. Lett. 98, 117202 (2007) , “Density-Functional Theory Study of Half-Metallic Heterostructures: Interstitial Mn in Si”, Hua Wu, Peter Kratzer, and Matthias SchefflerUsing density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer δ doping of interstitial Mn (Mnint) are half-metallic. For Mnint concentrations of 1/2 or 1 layer, the states induced in the band... (Read more)
- 238. Phys. Rev. Lett. 98, 115503 (2007) , “Oxygen Vacancy Clustering and Electron Localization in Oxygen-Deficient SrTiO3: LDA+U Study”, Do Duc Cuong, Bora Lee, Kyeong Mi Choi, Hyo-Shin Ahn, Seungwu Han, and Jaichan LeeWe find, using a local density approximation +Hubbard U method, that oxygen vacancies tend to cluster in a linear way in SrTiO3, a prototypical perovskite oxide, accompanied by strong electron localization at the 3d state of the nearby Ti transition metal ion. The vacancy... (Read more)
- 239. Phys. Rev. Lett. 98, 096805 (2007) , “Observation of the Linear Stark Effect in a Single Acceptor in Si”, L. E. Calvet, R. G. Wheeler, and M. A. ReedThe Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and... (Read more)
- 240. Phys. Rev. Lett. 98, 095901 (2007) , “Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon”, Yasuo Shimizu, Masashi Uematsu, and Kohei M. ItohWe have determined silicon self-diffusivity at temperatures 735–875 °C based on the Raman shift of longitudinal optical phonon frequencies of diffusion annealed 28Si/30Si isotope superlattices. The activation enthalpy of 3.6 eV is obtained in such low temperature... (Read more)
- 241. Phys. Rev. Lett. 98, 077601 (2007) , “Multiple-Pulse Coherence Enhancement of Solid State Spin Qubits”, W. M. Witzel and S. Das SarmaWe describe how the spin coherence time of a localized electron spin in solids, i.e., a solid state spin qubit, can be prolonged by applying designed electron spin resonance pulse sequences. In particular, the spin echo decay due to the spectral diffusion of the electron spin resonance frequency... (Read more)
- 242. Phys. Rev. Lett. 98, 075503 (2007) , “Pseudoclimb and Dislocation Dynamics in Superplastic Nanotubes”, Feng Ding, Kun Jiao, Mingqi Wu, and Boris I. YakobsonPlastic relaxation of carbon nanotubes under tension and at high temperature is described in terms of dislocation theory and with atomistic computer simulations. It is shown how the glide of pentagon-heptagon defects and a particular type of their pseudoclimb, with the atoms directly breaking out of... (Read more)
- 243. Phys. Rev. Lett. 98, 055504 (2007) , “Ortho-Para Conversion of Interstitial H2 in Si”, M. Hiller, E. V. Lavrov, and J. WeberOrtho-para conversion of isolated interstitial H2 in single-crystalline Si is studied by Raman scattering. This process is suggested to be caused by the interaction of H2 with the nuclear magnetic moment of 29Si. At 77 K the ortho-to-para conversion rate is... (Read more)
- 244. Phys. Rev. Lett. 98, 045501 (2007) , “Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides”, Stephan Lany and Alex ZungerExisting defect models for In2O3 and ZnO are inconclusive about the origin of conductivity, nonstoichiometry, and coloration. We apply systematic corrections to first-principles calculated formation energies ΔH, and validate our theoretical defect model against... (Read more)
- 245. Phys. Rev. Lett. 98, 026802 (2007) , “Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy”, Shoji Yoshida, Yuya Kanitani, Ryuji Oshima, Yoshitaka Okada, Osamu Takeuchi, and Hidemi ShigekawaThe doping characteristics and carrier transport in a GaAs p-n junction were visualized with a ~10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The dynamics of minority carriers under operating conditions, such as recombination, diffusion, and electric... (Read more)
- 246. Phys. Rev. Lett. 98, 026801 (2007) , “Surface Dangling-Bond States and Band Lineups in Hydrogen-Terminated Si, Ge, and Ge/Si Nanowires”, R. Kagimura, R. W. Nunes, and H. ChachamWe report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels ε(+/-)... (Read more)
- 247. Phys. Rev. Lett. 98, 026101 (2007) , “Bonding at the SiC-SiO2 Interface and the Effects of Nitrogen and Hydrogen”, Sanwu Wang, S. Dhar, Shu-rui Wang, A. C. Ahyi, A. Franceschetti, J. R. Williams, L. C. Feldman,, and Sokrates T. PantelidesUnlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to... (Read more)
- 248. Phys. Rev. Lett. 98, 015501 (2007) , “First-Principles Simulations of Boron Diffusion in Graphite”, I. Suarez-Martinez, A. A. El-Barbary, G. Savini, and M. I. HeggieBoron strongly modifies electronic and diffusion properties of graphite. We report the first ab initio study of boron interaction with the point defects in graphite, which includes structures, thermodynamics, and diffusion. A number of possible diffusion mechanisms of boron in graphite are... (Read more)
- 249. phys. stat. sol. (b) 244, 437 (2007) , Wiley InterScience , “Thermoelectric properties and phase transitions of II-VI semiconductors at ultrahigh pressure”, V.V. Shchennikov, S.V. OvsyannikovThe high-pressure phase transitions in II-VI semiconductors (HgTe, HgSe, HgS, HgO, CdTe, CdSe, CdS, ZnTe, ZnSe, ZnS, ZnO) are analyzed in light of recent findings. A contribution is emphasized of the thermoelectric power (Seebeck effect) technique to registration of new electronic phases and to... (Read more)
- 250. phys. stat. sol. (b) 244, 279 (2007) , Wiley InterScience , “High-pressure X-ray diffraction study of ternary and non-stoichiometric PbTe and PbSe crystals”, S.V. Ovsyannikov, V.V. Shchennikov, A.Y. Manakov, A.Y. Likhacheva, I.F. Berger, A.I. Ancharov, M.A. SheromovThe paper reports the pressure-induced phase transitions observed in ternary PbTe and PbSe compounds (Pb1-x Snx Te, Pb1-x Mnx Te, Pb1-x Snx Se) and non-stoichiometric PbTe ones... (Read more)
- 251. Physica B 401, 250 (2007) , Elsevier , “Doubly charged state of EL2 defect in MOCVD-grown GaAs ”, Nazir A. Naz, Umar S. Qurashi, Abdul Majid and M. Zafar IqbalEL2 is the ubiquitous native defect in crystalline GaAs grown by a variety of different techniques. It has been proposed to be a doubly charged deep-level center with two states having distinct energy levels in the band gap. While the singly charged state has been the subject of many experimental studies and is, therefore, well established, the doubly charged state has only been occasionally alluded to in the literature. This paper provides evidence for a dominant inadvertent deep level in p-type GaAs most likely to be the doubly charged state of the EL2 center. Deep-level transient spectroscopy (DLTS) has been applied to characterize epitaxial layers of p-type GaAs grown on p+ GaAs substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). A pronounced peak is observed in the majority carrier (hole) emission deep-level spectra. Thermal emission rate of holes from the corresponding deep level is found to exhibit a strong electric field dependence, showing an increase of more than two orders of magnitude with an increase of the electric field by a factor of~2. The thermal activation energy for this level is found to vary from 0.29 to 0.61 eV as the electric field is varied from 2.8×105 to 1.4×105 V/cm. Direct pulse-filling measurements point to a temperature-dependent behavior of the hole capture cross section of this level. We identify this inadvertent deep-level defect, commonly observed in p-type AsGa grown by a variety of different methods, with the doubly charged state of the well-known AsGa antisite related defect, EL2. (Read more)
- 252. Advances in Science and Technology 46, 73 (2006) , Trans Tech Publications, Switzerland , “Electric-Field-Enhanced Thermal Emission from Osmium-Related”, M. Zafar Iqbal, A. Majid, A. Dadgar and D. BimbergDeep-level defects related with 5d transition metal, osmium (Os) have been studied in ntype GaAs. Os has been incorporated in epitaxial n-GaAs layers in situ, during growth by lowpressure metal-organic chemical vapour phase epitaxy (MOVPE) technique. Mesa p+nn+ junction diodes are fabricated for investigations by deep level transient spectroscopy (DLTS). Two deeplevel peaks, observed in majority carrier (electron) emission spectra, Os1 and Os2, show a significant shift in peak positions to lower temperatures with the applied junction reverse bias, demonstrating enhancement of the thermal emission rate by the junction electric field. Doublecorrelation DLTS (DDLTS) measurements have been employed for accurate quantitative investigations of the observed field dependence. However, in view of the relatively small concentration of the deep level Os1, this technique is found to yield reliable data only for the deep level corresponding to the dominant peak, Os2. Detailed data have been obtained on the field effect for Os2, extending over junction electric field values 3 x 106 V/m - 1.2 x 107 V/m. The measured emission rate signatures show a reduction of the thermal activation energy from 0.48 eV to 0.21 eV for Os2 over this electric field range. Analysis of the data in terms of the recent theoretical work on field dependence indicates that Os2 is associated with a substitutional Os donor. (Read more)
- 253. Appl. Phys. Lett. 89, 262904 (2006) , “Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments”, Peter Broqvist and Alfredo PasquarelloThe authors calculate energy levels associated with the oxygen vacancy in monoclinic HfO2 using a hybrid density functional which accurately reproduces the experimental band gap. The most stable charge states are obtained for varying Fermi level in the HfO2 band gap. To compare... (Read more)
- 254. Appl. Phys. Lett. 89, 262118 (2006) , “p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors”, X. J. Wu, D. Z. Shen, Z. Z. Zhang, J. Y. Zhang, K. W. Liu, B. H. Li, Y. M. Lu, D. X. Zhao, and B. YaoCd1−xFexS thin films with different Fe contents were grown on c-plane sapphire by low-pressure metal organic chemical vapor deposition. The resistivity of the thin films was found to increase with the addition of more Fe contents into the... (Read more)
- 255. Appl. Phys. Lett. 89, 262112 (2006) , “Identification of oxygen and zinc vacancy optical signals in ZnO”, T. Moe Børseth, B. G. Svensson, A. Yu. Kuznetsov, P. Klason, Q. X. Zhao, and M. WillanderPhotoluminescence spectroscopy has been used to study single crystalline ZnO samples systematically annealed in inert, Zn-rich and O-rich atmospheres. A striking correlation is observed between the choice of annealing ambient and the position of the deep band emission (DBE) often detected in ZnO. In... (Read more)
- 256. Appl. Phys. Lett. 89, 253124 (2006) , “White electroluminescence from C- and Si-rich thin silicon oxides”, O. Jambois, B. Garrido, P. Pellegrino, Josep Carreras, A. Pérez-Rodríguez, J. Montserrat, C. Bonafos, G. BenAssayag, and S. SchammWhite electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40 nm thick SiO2, followed by annealing at 1100 °C. Structural and optical studies allow assigning the... (Read more)
- 257. Appl. Phys. Lett. 89, 252115 (2006) , “Doping and defects in the formation of single-crystal ZnO nanodisks”, Junjie Qi, Yue Zhang, Yunhua Huang, Qingliang Liao, and Juan LiuHigh purity growth of polar surface dominated ZnO nanodisks was fabricated by introducing In ions in the raw material by thermal evaporation process without a catalyst. The nature of the sharp-contrast lines in the disks was investigated. The results suggested that the existence of sharp-contrast... (Read more)
- 258. Appl. Phys. Lett. 89, 252110 (2006) , “Fermi-level pinning and charge neutrality level in germanium”, A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. EvangelouThe Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen limit. The pinning factor S is about 0.05 and the charge neutrality level (CNL) is only about 0.09 eV above the top of the valence... (Read more)
- 259. Appl. Phys. Lett. 89, 243101 (2006) , “Random telegraph signals and noise behaviors in carbon nanotube transistors”, Fei Liu, Kang L. Wang, Daihua Zhang, and Chongwu ZhouA random telegraph signal appears at a smaller absolute gate bias for a larger absolute drain-source bias in a carbon nanotube transistor. Its mechanism is attributed to a defect located in the drain side of the Schottky barrier carbon nanotube transistor with Ti/Au as contact material. Furthermore,... (Read more)
- 260. Appl. Phys. Lett. 89, 242113 (2006) , “Thermally stimulated current studies on deep levels in hydrothermally grown single crystal ZnO bulk”, K. Kuriyama, M. Ooi, K. Matsumoto, and K. KushidaThe evaluation of the deep levels in hydrothermally grown ZnO single crystal bulk is studied using a thermally stimulated current (TSC) method with excitation above (below) the band gap. Two broad TSC spectra are resolved by four traps, P1 (165 meV), P2 (255 ... (Read more)
- 261. Appl. Phys. Lett. 89, 241911 (2006) , “Defect and stress characterization of AlN films by Raman spectroscopy”, Vanni Lughi and David R. ClarkeRaman spectroscopy was used to characterize the residual stress and defect density of AlN thin films reactively sputtered on silicon (100). The authors studied the correlation between the shift of the E2 (high) phonon of AlN at 658 cm−1 and the film biaxial stress... (Read more)
- 262. Appl. Phys. Lett. 89, 232112 (2006) , “Determination at 300 K of the hole capture cross section of chromium-boron pairs in p-type silicon”, S. Dubois, O. Palais, and P. J. RibeyronMeasurement of dissolved chromium concentration in p-type crystalline silicon by means of the change in carrier lifetime due to chromium-boron pair dissociation requires precise knowledge of the recombination parameters of dissolved chromium in silicon. This work, based on quasi-steady-state... (Read more)
- 263. Appl. Phys. Lett. 89, 232111 (2006) , “Electron-beam-induced dissociation of B–D complexes in diamond”, J. Barjon, J. Chevallier, F. Jomard, C. Baron, and A. DeneuvilleThe diffusion of deuterium in boron-doped homoepitaxial diamond films leads to the passivation of boron acceptors via the formation of B–D complexes. In this letter, the stability of B–D pairs is investigated under the stress of a low-energy (10 keV) electron-beam irradiation at low... (Read more)
- 264. Appl. Phys. Lett. 89, 231906 (2006) , “Threading dislocation reduction by SiGeC domains in SiGe/SiGeC heterostructure: Role of pure edge dislocations”, L. H. Wong, C. Ferraris, C. C. Wong, and J. P. LiuThe authors previously reported an unusual phenomenon of strain relaxation accompanied by a reduction in threading dislocation density (TDD) on a Si0.77Ge0.23 layer grown on top of alternating layers of... (Read more)
- 265. Appl. Phys. Lett. 89, 231901 (2006) , “Cathodoluminescence investigations of GaInNAs on GaAs(111)B”, J. Miguel-Sánchez, U. Jahn, A. Guzmán, and E. MuñozIn this work, we present a detailed cathodoluminescence characterization of GaInNAs quantum wells grown on GaAs(111)B. As-grown and annealed InGaAs and GaInNAs quantum wells were maeasured and compared by spatially resolved cathodoluminescence at different photon energies. In the case of... (Read more)
- 266. Appl. Phys. Lett. 89, 223502 (2006) , “Identification of trapping defects in 4H-silicon carbide metal-insulator-semiconductor field-effect transistors by electrically detected magnetic resonance”, Morgen S. Dautrich, Patrick M. Lenahan, and Aivars J. LelisIn conventional Si/SiO2-based metal oxide semiconductor devices, performance-limiting semiconductor/dielectric interface traps are localized precisely at the Si/SiO2 boundary. The authors show that in high-quality SiC/SiO2-based devices, this is not necessarily the... (Read more)
- 267. Appl. Phys. Lett. 89, 222103 (2006) , “Comparison of near-interface traps in Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC structures”, Marc Avice, Ulrike Grossner, Ioana Pintilie, Bengt G. Svensson, Ola Nilsen, and Helmer FjellvagAluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of capacitance-voltage and thermal dielectric relaxation current measurements, the interface... (Read more)
- 268. Appl. Phys. Lett. 89, 222101 (2006) , “Reversible creation and annihilation of a local leakage path in HfO2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy”, K. Yamamura, K. Kita, A. Toriumi, and K. KyunoBy direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in HfO2/GeOx stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and... (Read more)
- 269. Appl. Phys. Lett. 89, 211914 (2006) , “Molecular hydrogen formation in hydrogenated silicon nitride”, H. F. W. Dekkers, G. Beaucarne, M. Hiller, H. Charifi, and A. SlaouiHydrogen is released from hydrogenated silicon nitride (SiNx:H) during thermal treatments. The formation of molecular hydrogen (H2) in SiNx:H layers with low mass density is confirmed by Raman spectroscopy. However, no H2 is observed in... (Read more)
- 270. Appl. Phys. Lett. 89, 211114 (2006) , “Site selective studies of Er3+ emission centers in Er-implanted 6H-SiC”, V. Glukhanyuk and A. KozaneckiIn this work the high resolution site selective photoluminescence (PL) using Fourier transform spectrometer and PL excitation spectra near 1.54 µm in Er-implanted 6H-SiC were investigated. Direct evidence for the existence of three different Er3+ emitting centers... (Read more)
- 271. Appl. Phys. Lett. 89, 202904 (2006) , “Effects of O vacancies and C doping on dielectric properties of ZrO2: A first-principles study”, Gargi Dutta, K. P. S. S. Hembram, G. Mohan Rao, and Umesh V. WaghmareThe authors determine electronic properties, structural stability, and dielectric response of zirconia (ZrO2) with oxygen vacancies (O vacancies) and carbon doping (C doping) using first-principles density functional theory calculations based on pseudopotentials and a plane wave basis.... (Read more)
- 272. Appl. Phys. Lett. 89, 202114 (2006) , “Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium”, E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, and P. ClauwsDefect formation during Pd and Pt germanidation of n-type germanium, using rapid thermal annealing in the range of 300–500 °C, is investigated by deep level transient spectroscopy. Small concentrations of an electron trap at ~EC−0.385 eV are found,... (Read more)
- 273. Appl. Phys. Lett. 89, 201911 (2006) , “Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures”, R. Liu, J. Mei, S. Srinivasan, F. A. Ponce, H. Omiya, Y. Narukawa, and T. MukaiThe authors have observed that for InxGa1−xN epitaxial layers grown on bulk GaN substrates exhibit slip on the basal plane, when in the presence of free surfaces that intercept the heterointerface and for indium compositions x0.07. This leads to... (Read more)
- 274. Appl. Phys. Lett. 89, 191903 (2006) , “Vacancy self-trapping during rapid thermal annealing of silicon wafers”, Thomas A. Frewen and Talid SinnoThe density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial... (Read more)
- 275. Appl. Phys. Lett. 89, 182115 (2006) , “Electrically detected magnetic resonance in ion-implanted Si:P nanostructures”, D. R. McCamey, H. Huebl, M. S. Brandt, W. D. Hutchison, J. C. McCallum, R. G. Clark, and A. R. HamiltonThe authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5 K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 1017 ... (Read more)
- 276. Appl. Phys. Lett. 89, 182110 (2006) , “Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN”, H. Otake, T. Kuroda, T. Fujita, T. Ushiyama, A. Tackeuchi, T. Chinone, J.-H. Liang, and M. KajikawaThe spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15–50 K have a single exponential component corresponding to the electron spin... (Read more)
- 277. Appl. Phys. Lett. 89, 173108 (2006) , “Midgap luminescence centers in single-wall carbon nanotubes created by ultraviolet illumination”, Konstantin Iakoubovskii, Nobutsugu Minami, Yeji Kim, Kanae Miyashita, Said Kazaoui, and Balakrishnan NaliniThe authors report the effect of ultraviolet (UV) illumination on optical properties of single-wall carbon nanotubes (SWCNTs) isolated using various dispersants. It is demonstrated that even weak UV light (~1 mW/cm2) can irreversibly alter the SWCNT structure, thus resulting in the... (Read more)
- 278. Appl. Phys. Lett. 89, 172906 (2006) , “Oxygen vacancy motion in Er-doped barium strontium titanate thin films”, Junling Wang and Susan Trolier-McKinstryAmphoteric dopants are widely used in BaTiO3-based dielectrics to improve capacitor reliability. In this work, an analogous approach was explored for barium strontium titanate thin films. Ba0.7Sr0.3TiO3 thin films were prepared by chemical solution... (Read more)
- 279. Appl. Phys. Lett. 89, 171916 (2006) , “Evidences of F-induced nanobubbles as sink for self-interstitials in Si”, S. Boninelli, A. Claverie, G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, and F. CristianoThe beneficial effects of F implantation on the modification of extended defects in Si have been studied. Preamorphized Si samples were implanted with F (75 keV, 6×1015 F/cm2) and regrown by solid phase epitaxy (SPE) at 700 °C. The formation, just after SPE, of a... (Read more)
- 280. Appl. Phys. Lett. 89, 161905 (2006) , “Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence”, N. Pauc, M. R. Phillips, V. Aimez, and D. DrouinThe authors present a low voltage cathodoluminescence (CL) study of as grown GaN and GaN:Si epilayers on sapphire. At 1 kV they resolve individual threading dislocations on the sample surface at low temperature (5 K), which appear as correlated dark spots. Analysis of CL intensity profiles across... (Read more)
- 281. Appl. Phys. Lett. 89, 161904 (2006) , “Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops”, S. Boninelli, N. Cherkashin, A. Claverie, and F. CristianoA detailed study of the transformation of the {113} defects into dislocation loops has been carried out in Ge preamorphized silicon (30 keV, 1×1015 Ge+/cm2) and annealed at 800 °C for time ranging from 15 to 2700 s. The presence of a stable defect,... (Read more)
- 282. Appl. Phys. Lett. 89, 152910 (2006) , “Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment”, Hong-Liang Lu, Liang Sun, Shi-Jin Ding, Min Xu, David Wei Zhang, and Li-Kang WangAl2O3 thin films were deposited by atomic layer deposition on HF-cleaned and NH3 plasma-treated GaAs surfaces, respectively. The precursors used for Al2O3 films are trimethylaluminum and water. Effects of NH3 plasma pretreatment on... (Read more)
- 283. Appl. Phys. Lett. 89, 152904 (2006) , “First principles calculations of oxygen vacancy passivation by fluorine in hafnium oxide”, Wei Chen, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang, and Li-Kang WangThe fluorine incorporation into HfO2 with oxygen vacancies has been investigated using first principles calculations. The authors show that atomic fluorine can efficiently passivate the neutral oxygen vacancy with excess energies of 4.98 and 4.39 eV for threefold- and... (Read more)
- 284. Appl. Phys. Lett. 89, 152123 (2006) , “Electrical characterization of defects introduced in n-type Ge during indium implantation”, F. D. Auret, P. J. Janse van Rensburg, M. Hayes, J. M. Nel, W. E. Meyer, S. Decoster, V. Matias, and A. VantommeThe authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160 keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at... (Read more)
- 285. Appl. Phys. Lett. 89, 152103 (2006) , “Inherent density of point defects in thermal tensile strained (100)Si/SiO2 entities probed by electron spin resonance”, A. Stesmans, P. Somers, V. V. Afanas'ev, C. Claeys, and E. SimoenAn electron spin resonance analysis has been carried out of the intrinsic point defects in (100)Si/SiO2 entities thermally grown at 800 °C on biaxial tensile strained Si (s-Si). As compared to coprocessed standard (100)Si/SiO2, a significant reduction (>50%) is... (Read more)
- 286. Appl. Phys. Lett. 89, 151923 (2006) , “Variable core model and the Peierls stress for the mixed (screw-edge) dislocation”, Vlado A. Lubarda and Xanthippi MarkenscoffA variable core model of a moving crystal dislocation is proposed and used to derive an expression for the Peierls stress. The dislocation width varies periodically as a dislocation moves through the lattice, which leads to an expression for the Peierls stress in terms of the difference of the total... (Read more)
- 287. Appl. Phys. Lett. 89, 151918 (2006) , “Competition between damage buildup and dynamic annealing in ion implantation into Ge”, M. Posselt, L. Bischoff, D. Grambole, and F. HerrmannChanneling implantation of Ga into Ge is performed at two very different ion fluxes (1012 and 1019 cm2 s1), at two temperatures (room temperature and 250 °C), and at five different fluences. The fluence dependence of the range profiles... (Read more)
- 288. Appl. Phys. Lett. 89, 143505 (2006) , “Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts”, R. X. Wang, S. J. Xu, S. L. Shi, C. D. Beling, S. Fung, D. G. Zhao, H. Yang, and X. M. TaoUnder identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency... (Read more)
- 289. Appl. Phys. Lett. 89, 143120 (2006) , “Electroluminescence mapping of CuGaSe2 solar cells by atomic force microscopy”, Manuel J. Romero, C.-S. Jiang, J. Abushama, H. R. Moutinho, M. M. Al-Jassim, and R. NoufiThe authors report on the observation of electroluminescence (EL) in CuGaSe2 solar cells using tapping-mode atomic force microscopy based on tuning-fork sensors. Individually injected current pulses are seen during intermittent contact driven by an external bias applied to the conducting... (Read more)
- 290. Appl. Phys. Lett. 89, 142914 (2006) , “Defect passivation in HfO2 gate oxide by fluorine”, K. Tse and J. RobertsonThe authors have calculated that fluorine substituting for oxygen gives no gap states in HfO2. This accounts for the good passivation of oxygen vacancies by F seen experimentally. Bonding arguments are used to account for why F may be the most effective passivant in ionic oxides such as... (Read more)
- 291. Appl. Phys. Lett. 89, 142909 (2006) , “Fluorine passivation in poly-Si/TaN/HfO2 through ion implantation”, M. H. Zhang, F. Zhu, T. Lee, H. S. Kim, I. J. Ok, G. Thareja, L. Yu, and Jack C. LeeFluorine (F) passivation in poly-Si/TaN/HfO2/p-Si gate stacks through gate ion implantation has been studied. It has been found that when the TaN thickness was less than 15 nm, the mobility and subthreshold swing improved significantly in HfO2 n-channel... (Read more)
- 292. Appl. Phys. Lett. 89, 131918 (2006) , “Hydrogen incorporation processes in nanodiamond films studied by isotopic induced modifications of Raman spectra”, Sh. Michaelson, O. Ternyak, A. Hoffman, and Y. LifshitzThe effect of replacing H by D and C-12 by C-13 in the gas species used to grow different types of nanodiamond films on the Raman spectra of these films was studied. The modifications of the Raman spectra were investigated in submicron sized diamond films grown by hot filament chemical vapor... (Read more)
- 293. Appl. Phys. Lett. 89, 122112 (2006) , “Interface states for HfO2/Si structure observed by x-ray photoelectron spectroscopy measurements under bias”, Osamu Maida, Ken-ichi Fukayama, Masao Takahashi, Hikaru Kobayashi, Young-Bae Kim, Hyun-Chul Kim, and Duck-Kyun ChoiA 1.0 nm silicon nitride (SiN) layer can prevent reaction between HfO2 and Si completely. In this case, the interface state spectra obtained from x-ray photoelectron spectroscopy measurements under bias have two peaks above and below the midgap, attributable to Si dangling bonds... (Read more)
- 294. Appl. Phys. Lett. 89, 122111 (2006) , “Hall electron mobility in diamond”, J. Pernot, C. Tavares, E. Gheeraert, E. Bustarret, M. Katagiri, and S. KoizumiThe low field Hall mobility of electron in diamond was investigated from room temperature to 873 K, both experimentally and theoretically. The acoustic deformation potential for electron scattering is determined by fitting of theoretical calculations to experimental data for high quality {111}... (Read more)
- 295. Appl. Phys. Lett. 89, 112903 (2006) , “Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition”, Raghavasimhan Sreenivasan, Paul C. McIntyre, Hyoungsub Kim, and Krishna C. SaraswatHfO2 films were grown by atomic layer deposition using two different precursor chemistriesHfCl4 and tetrakis(diethylamido)hafnium (TDEAH) with H2O as the oxidant. Electrical measurements on capacitor structures fabricated using the films showed a 0.4 V... (Read more)
- 296. Appl. Phys. Lett. 89, 112124 (2006) , “Electric conductivity of boron nitride thin films enhanced by in situ doping of zinc”, K. Nose, H. Oba, and T. YoshidaThe authors demonstrate that the electric conductivities of cubic and hexagonal boron nitride (c-BN and h-BN) thin films increased markedly by the in situ doping of zinc. The doped films were electrically semiconducting, and conductivities at room temperature increased from... (Read more)
- 297. Appl. Phys. Lett. 89, 112122 (2006) , “Enhancement of resistivity of Czochralski silicon by deep level manganese doping”, Kanad Mallik, C. H. de Groot, P. Ashburn, and P. R. WilshawDeep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm2 of Mn at 100 keV followed by rapid thermal... (Read more)
- 298. Appl. Phys. Lett. 89, 112121 (2006) , “Nature and stability of the (100)Si/LaAlO3 interface probed by paramagnetic defects”, A. Stesmans, K. Clémer, V. V. Afanas'ev, L. F. Edge, and D. G. SchlomElectron spin resonance analysis of (100)Si/LaAlO3 structures reveals the absence of a Si/SiO2-type interface in terms of archetypal Si-dangling bond-type Si/SiO2 interface defects (Pb0,Pb1). With no... (Read more)
- 299. Appl. Phys. Lett. 89, 112113 (2006) , “Control of p- and n-type conductivities in Li-doped ZnO thin films”, J. G. Lu, Y. Z. Zhang, Z. Z. Ye, Y. J. Zeng, H. P. He, L. P. Zhu, J. Y. Huang, L. Wang, J. Yuan, B. H. Zhao, and X. H. LiLi-doped ZnO films were prepared by pulsed laser deposition. The carrier type could be controlled by adjusting the growth conditions. In an ionized oxygen atmosphere, p-type ZnO was achieved, with the hole concentration of 6.04×1017 cm3 at an optimal Li... (Read more)
- 300. Appl. Phys. Lett. 89, 112107 (2006) , “Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy”, Juan A. Jiménez Tejada, Pablo Lara Bullejos, Juan A. López Villanueva, Francisco M. Gómez-Campos, Salvador Rodríguez-Bolívar, and M. Jamal DeenRecombination centers in thin asymmetrical p-n junctions were analyzed in the context of capacitance transient experiments. The combined effect of the thin low-doped region of the junction and the nonzero value of the occupation factor of the recombination center in the depletion layer... (Read more)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)