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- 1. Appl. Phys. Lett. 89, 211114 (2006) , “Site selective studies of Er3+ emission centers in Er-implanted 6H-SiC”, V. Glukhanyuk and A. KozaneckiIn this work the high resolution site selective photoluminescence (PL) using Fourier transform spectrometer and PL excitation spectra near 1.54 µm in Er-implanted 6H-SiC were investigated. Direct evidence for the existence of three different Er3+ emitting centers... (Read more)
- 2. Appl. Phys. Lett. 88, 191904 (2006) , “Luminescence from Nd- and Dy-ion-implanted 4H–SiC”, Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, and Teruaki MotookaCathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4HSiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after... (Read more)
- 3. J. Appl. Phys. 100, 093507 (2006) , “A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy”, G. Battistig, N. Q. Khánh, P. Petrik, T. Lohner, L. Dobos, B. Pécz, J. García López, and Y. Morilla4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions using fluences of 4×1014, 1×1015, and 2×1015 cm−2 with current density of 2.5 µA cm−2.... (Read more)
- 4. J. Appl. Phys. 99, 023523 (2006) , “Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy”, G. Brauer, W. Anwand, W. Skorupa, S. Brandstetter, and C. TeichertSystematic slow positron implantation spectroscopy (SPIS) and atomic force microscopy studies of various 6H-SiC samples are presented to clarify the role of conductivity type, crystal quality, ion implantation (B+,Al+, and N+), and annealing (1.650 °C) in... (Read more)
- 5. J. Appl. Phys. 99, 013515 (2006) , “Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H–SiC Schottky diodes”, F. Roccaforte, S. Libertino, V. Raineri, A. Ruggiero, V. Massimino, and L. CalcagnoIn this paper, the formation and evolution of defects induced by ion irradiation with 1 MeV Si+ ions in Ni2Si/4HSiC Schottky diodes were studied and correlated with the electrical properties of the contacts. The current-voltage characteristics of the contacts... (Read more)
- 6. J. Appl. Phys. 97, 123502 (2005) , “Ion irradiation of inhomogeneous Schottky barriers on silicon carbide”, F. Roccaforte, S. Libertino, F. Giannazzo, C. Bongiorno, F. La Via, and V. RaineriIn this paper, the effects of ion irradiation on Schottky barriers formed on silicon carbide are discussed. After Si-ion irradiation at the near-interface region in Ti/4H-SiC contacts an increase of the Schottky barrier height from 1.05 to 1.21 eV was observed, accompanied by a lowering of the... (Read more)
- 7. Appl. Phys. Lett. 84, 1704 (2004) , “Bistable defect in mega-electron-volt proton implanted 4H silicon carbide”, D. M. Martin, H. Kortegaard Nielsen, P. Lévêque, A. Hallén, G. Alfieri, B. G. SvenssonEpitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1×1012 cm2 creates an estimated initial concentration of... (Read more)
- 8. Nucl. Instrum. Methods Phys. Res. B 206, 965 (2003) , “ESR characterization of activation of implanted phosphorus ions in silicon carbide”, J. Isoya, T. Ohshima, A. Ohi, N. Morishita and H. ItohPhosphorus ion implantations of 6H-SiC in the mean phosphorus concentration of the implanted layer of 1 × 1018 cm−3 were performed both at multi-fold energy between 9 and 21 MeV and at 340 keV. In the high-energy implantations at room temperature, 400, 800 and 1200 °C and in the 340... (Read more)
- 9. Physica B 340-342, 903-907 (2003) , “Pulsed EPR studies of shallow donor impurities in SiC”, J. Isoya, T. Ohshima, N. Morishita, T. Kamiya, H. Itoh, S. YamasakiSpin-lattice relaxation time (T1) and phase memory time (TM) of shallow donors in 3C-, 4H- and 6H-SiC have been measured in time domain by using pulsed EPR technique. The temperature dependence of T1 suggests that the Orbach process should be frozen at relatively high temperatures. Shallow donors in SiC are promising in attaining a sufficiently long phase memory time at temperatures much higher than Si:P. (Read more)
- 10. Physica B 340-342, 743 (2003) , “Annealing study of a bistable defect in proton-implanted n-type 4H-SiC”, H. Kortegaard Nielsen, D. M. Martin, P. Lévêque, A. Hallén and B. G. SvenssonThe thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5 MeV protons to a... (Read more)
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