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- 1. Phys. Rev. B 74, 035202 (2006) , “Computation of the Stark effect in P impurity states in silicon”, A. Debernardi, A. Baldereschi, and M. FanciulliWe compute within the effective-mass theory and without adjustable parameters the Stark effect for shallow P donors in Si with anisotropic band structure. Valley-orbit coupling is taken into account in a nonperturbative way and scattering effects of the impurity core are included to properly... (Read more)
- 2. Phys. Rev. Lett. 97, 227401 (2006) , “Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States”, A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. HallerWe resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine... (Read more)
- 3. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
- 4. Physica B 302-303, 212-219 (2001) , “Magnetic resonance studies of shallow donor centers in hydrogenated Cz–Si crystals”, B. Langhanki, S. Greulich-Weber, J. –M. Staeth, V. P. Markevich, L. I. Murin, T. Mchedlidze, M. Suezawa.A complex magnetic resonance study (EPR, electrically detected EPR, ENDOR) of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1–D3) were observed earlier by means of infrared absorption measurements in hydrogenated... (Read more)
- 5. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 6. Proc. symp. on the degradation od electronic devices due to device operation as well as crystalline and process-induced defects 94-1, 221-234 (1994) , ECS (ISBN:1-56677-037-8) , “Spin dependent recombination in Si p-n junctions”, B. K. Meyer , P. Christmann , W. Stadler, H. Overhof, J.-M. Spaeth, S. Greulich-Weber, B. Stich
- 7. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 8. Semicond. Sci. Technol. 8, 1385-1392 (1993) , “Electrically detected electron paramagnetic resonance of a deep recombination centre in a silicon diode”, B. Stich , S. Gruelich-Weber , J.-M. Spaeth , H. Overhof
- 9. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 10. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
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