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- 201. Phys. Rev. B 61, 16068-16076 (2000) , “Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface”, A. Stesmans, B. NouwenAn electron spin resonance (ESR) study has been carried out on the Pb centers (interfacial ?Si?Si3) in standard thermal (111)Si/SiO2, of which, in the as-grown state, a density 4.91012 cm-2 is inherently incorporated. The Pb density... (Read more)
- 202. Phys. Rev. B 61, 12939 (2000) , “Dimer of Substitutional Carbon in Silicon Studied by EPR and ab initio Methods”, J. R. Byberg, B. Bech Nielsen, M. Fanciulli, S. K. Estreicher, P. A. Fedders.An EPR signal observed in carbon-doped float-zone silicon after irradiation with 2-MeV electrons at room temperature has been investigated. It represents a defect with S=1/2, an apparently isotropic g factor (=2.0030), and a complicated hyperfine structure from 29Si nuclei in five shells... (Read more)
- 203. Phys. Rev. Lett. 85, 417 (2000) , “Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State of ZnS- in Si”, H. Schroth, K. L. La?mann, S. Vo?, H. Bracht.Electric-dipole spin resonance of the deep acceptor ZnS- in Si reveals close Γ8 and Γ7 ground states with zero-field separation of only 0.31 meV as compared to the 43 meV of the two valence bands. With Landé's formula for the g factors of a 2T2 state split by spin-orbit interaction into Γ8 and Γ7 this nearness can be interpreted as strong quenching of the orbital moment. The observed dependence on the Zn isotopic mass indicates a dynamic contribution of the acceptor atom to the electronic state as is expected for a Jahn-Teller effect. (Read more)
- 204. Phys. Rev. Lett. 85, 2324-2327 (2000) , “Fast Diffusion of H and Creation of Dangling Bonds in Hydrogenated Amorphous Silicon Studied by in situ ESR”, U. K. Das, T. Yasuda, and S. YamasakiThe interaction of atomic hydrogen with a-Si:H films was studied by means of in situ ESR during H plasma treatment. H diffuses into the a-Si:H film and creates additional Si dangling bonds (∼1013 cm -2). We observed a high diffusion coefficient (>10-10 cm... (Read more)
- 205. phys. stat. sol. (a) 181, 83-90 (2000) , “Relative Abundance of Single and Vacancy-Bonded Substitutional Nitrogen in CVD Diamond”, I. I. Vlasov, V. G. Ralchenko, A. V. Khomich, S. V. Nistor, D. Shoemaker, R. A. KhmelnitskiiRelations between the concentrations of neutral (N0) and charged (N+) single-substitutional nitrogen and of nitrogen-vacancy (N-V) complexes in chemical vapour deposited diamond films of 0.2 mm thickness with nitrogen impurity concentration levels of 10 ppm are studied. For... (Read more)
- 206. phys. stat. sol. (a) 181, 5-10 (2000) , “ESR Study of Phosphorus Implanted Type IIa Diamond”, N. Casanova, E. Gheeraert, A. Deneuville, C. Uzan-Saguy, R. KalishCold Implantation and Rapid Annealing (CIRA) at 1050 °C of P in IIa diamond crystal, then further annealing at 1400 °C were performed. EPR signals were obtained in particular (i) around g = 2.003, from “dangling bond” defects whose total concentration increases with the dose and decreases... (Read more)
- 207. phys. stat. sol. (b) 221, 625-631 (2000) , “Identification of the Gold-Lithium Defect L1 in Silicon with the Trigonal Centre Au2--(Li+)3 by Electrical, Optical and Magnetic Resonance Spectroscopy”, B. Langhanki, J. M. SpaethN-type silicon doped with gold and lithium was investigated by Electron Paramagnetic Resonance (EPR) and Deep Level Transient Spectroscopy (DLTS), using two sets of samples with different defect concentrations of both gold and lithium. Photoluminescence (PL) on both sets of samples allowed to... (Read more)
- 208. phys. stat. sol. (b) 217, 665-684 (2000) , “Paramagnetic Defects”, U. Gerstmann, M. Amkreutz, H. OverhofAb-initio calculations of paramagnetic hyperfine interactions for deep defects in semiconductors provide information about the magnetization density distribution in space. A comparison of theoretical results with corresponding data from magnetic resonance experiments allows to estimate the accuracy... (Read more)
- 209. Physica B 291, 270-274 (2000) , “An investigation of the optical spectra and EPR parameters of vanadium in III–V semiconductors (GaAs, GaP, InP)”, Jia-Jun Chen and Mao-Lu DuAs there is strong covalence in III–V semiconductors, the effect of the difference between the t2g orbit and eg orbit must be considered in their electric structure. In this paper we present a modified Sugano–Tanabe scheme and give the energy matrix of the d2 system and the g-factor... (Read more)
- 210. Physica E 6, 798-801 (2000) , “An experimental and theoretical study of the electron spin resonance mechanism in AlGaAs/GaAs”, R. Meisels, F. Kuchar and M. KriechbaumThe electron spin resonance (ESR) of the 2DES in AlGaAs/GaAs is investigated at millimeterwave frequencies and is shown to be dominantly a magnetic dipole transition. Strain-induced contributions to the electric dipole transition rate can be neglected. The origin of the change of the resistance due... (Read more)
- 211. Solid State Commun. 114, 39-42 (2000) , “Electron spin resonance of erbium in gallium nitride”, M. Palczewska, A. Wolos, M. Kaminska, I. Grzegory, M. Bockowski, S. Krukowski, T. Suski and S. PorowskiWe performed electron spin resonance (ESR) measurements on Er-doped single GaN crystals synthesized from the solution of nitrogen in liquid gallium under high pressure of N2. The axial Er3+ spectrum was observed with g||=2.861±0.003, g=7.645±0.003,... (Read more)
- 212. Appl. Catalysis A 178, 167-176 (1999) , “Reactivity for isomerization of 1-butene on the mixed MoO3–ZnO oxide catalyst”, Kentaro Nakamura, Kazuo Eda, Sadao Hasegawa , Noriyuki SotaniThe mixed MoO3–ZnO catalyst was expected to reveal the new function as a catalyst. The catalyst was characterized by XRD, ESR, XANES and so on. We found that the MoO3–ZnO catalyst was effective for isomerization and metathesis of 1-butene. The defects with the anion vacancy were formed... (Read more)
- 213. Appl. Phys. Lett. 74, 3948 (1999) , “Electron Paramagnetic Resonance of Radiation Defects in Hydrogen-Implanted Silicon Detected by Spin-Dependent Microwave Photoconductivity”, R. Laiho, L. S. Vlasenko, M. P. Vlasenko, V. A. Kozlov, V. V. Kozlovski.Electron paramagnetic resonance (EPR) spectra of radiation defects induced by low-energy protons (100 keV) in a thin near-surface layer (L < 1 µm) of silicon crystals are detected with spin-dependent microwave photoconductivity. It is found that EPR spectra of the excited... (Read more)
- 214. Appl. Surf. Sci. 147, 85-93 (1999) , “Influence of trivalent metal ions on the surface structure of a copper-based catalyst for methanol synthesis”, Hong-Bo Chen, Dai-Wei Liao, La-Jia Yu, Yi-Ji Lin, Jun Yi, Hong-Bin Zhang and Khi-Rui TsaiThe method of doping trivalent metal ions into a copper-based catalyst for methanol synthesis is effective in modifying the surface structure of the catalyst. The promotion effect and its relation to catalytic activity for hydrogenation of CO to methanol after doping with trivalent metal ions such... (Read more)
- 215. Diamond Relat. Mater. 8, 2022 (1999) , “Multiple twinning and nitrogen defect center in chemical vapor deposited homoepitaxial diamond”, Chih-Shiue Yan and Yogesh K. VohraHomoepitaxial diamond films were grown on polished {100} faces of single crystal type IIa diamond substrates using microwave plasma assisted chemical vapor deposition system. 14 homoepitaxial diamond films were grown under a variety of substrate temperatures (1000–2000°C), methane... (Read more)
- 216. Diamond Relat. Mater. 8, 1572 (1999) , “Correlation between ND1 optical absorption and the concentration of negative vacancies determined by electron paramagnetic resonance (EPR)”, D. J. Twitchen, D. C. Hunt, V. Smart, M. E. Newton and J. M. BakerElectron paramagnetic resonance (EPR) and optical absorption data on the negative and neutral vacancy in diamond are presented. We determine directly the constant of proportionality between the concentration of V− and the integrated intensity of its zero-phonon line (ND1). Using the standard... (Read more)
- 217. Diamond Relat. Mater. 8, 1569 (1999) , “ESR studies of the negative divacancy in irradiated type-I diamonds”, J. K. Kirui, J. A. van Wyk and M. J. R. HochThe W29 is a defect that forms in all irradiated type-Ib diamonds, and some type-Ia diamonds, in the temperature range in which isolated vacancies are mobile. It anneals out at roughly the same temperatures at which other defects, such as the negative vacancy and the R4 centre, which involve... (Read more)
- 218. Diamond Relat. Mater. 8, 1565 (1999) , “New EPR spectra in diamonds with a high concentration of nitrogen atoms”, V. A. Nadolinny, A. P. Yelisseyev, A. G. Badalyan, J. M. Baker, D. J. Twitchen, M. E. Newton, A. Hofstaetter and B. FeigelsonThe EPR spectrum of a synthetic diamond, containing a high concentration of isolated substitutional nitrogen, NS (the P1 EPR centre), shows in addition to the spectrum of P1 three other features not previously observed in nitrogen containing diamond:1. an ‘allowed’ pair spectrum close... (Read more)
- 219. Diamond Relat. Mater. 8, 1560 (1999) , “Modelling of interstitial-related defects in diamond”, A. MainwoodRadiation damage in diamond is a major experimental research tool and is becoming a technologically important topic. Although the vacancy and its complexes are well understood, the other products, the interstitials, are much less studied. Recent theoretical modelling of defects in diamond has... (Read more)
- 220. Diamond Relat. Mater. 8, 1480 (1999) , “Characteristic defects in CVD diamond: optical and electron paramagnetic resonance study”, M. Nesládek, K. Meykens, K. Haenen, J. Navrátil, C. Quaeyhaegens, L. M. Stals, A. Stesmans, K. Iakoubovskij, G. J Adriaenssens, J. Rosa and M. VanekConstant photocurrent method (CPM), electron paramagnetic resonance (EPR), and infra-red optical absorption (FTIR) techniques are used to study characteristic defects in the gap of free-standing optical-quality CVD diamond. It is shown that the gap density of states (DOS) is very sensitive to... (Read more)
- 221. Diamond Relat. Mater. 8, 1101 (1999) , “Optical spin polarization in the di-<001>-split interstitial (R1) centre in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, W. F. Banholzer, T. R. AnthonyIrradiating diamond with electrons or neutrons produces the electron paramagnetic resonance (EPR) R1 centre which has been shown to be a di-001-split interstitial. We report that on cooling below a certain threshold temperature and illuminating with unpolarized light of energy greater than 1.7(1)... (Read more)
- 222. J. Magn. Reson. 136, 207-210 (1999) , “A Cryogenically Coolable Microwave Limiter”, George A. Rinard, Richard W. Quine , Gareth R. EatonA microwave (ca. 3 GHz) limiter, constructed using a GaAs PIN diode and microstrip impedance transformation circuit, limited 300-ns long 11-W microwave pulses to 70 mW at ca. 4.2 K. This limiter was implemented in a pulsed electron paramagnetic resonance (EPR) spectrometer to protect a low-noise microwave preamplifier from the high-power pulses. (Read more)
- 223. J. Phys.: Condens. Matter 11, 7357 (1999) , “A study of 13C hyperfine structure in the EPR of nickel-nitrogen-containing centres in diamond and correlation with their optical properties”, V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, M. E. Newton, D. J. Twitchen, S. C. Lawson, O. P. Yuryeva, B. N. FeigelsonElectron paramagnetic resonance (EPR) and optical spectroscopy have been used to determine the structure and electronic state of nickel-nitrogen centres in natural diamonds and in synthetic diamonds enriched in 13C. The latter were grown in an Fe-Ni-C solvent/catalyst system at 1750 K,... (Read more)
- 224. Jpn. J. Appl. Phys. 38, L113 (1999) , “Yellow Emission from Zinc Oxide giving an Electron Spin Resonance Signal at g=1.96”, Naoki Ohashi, Tomokazu Nakata, Takashi Sekiguchi, Hideo Hosono, Masafumi Mizuguchi, Takaaki Tsurumi, Junzo Tanaka, Hajime HanedaZnO polycrystals doped with Li, Cu or Al were prepared by solid-state reactions and their cathodoluminescence (CL) and electron spin resonance (ESR) spectra were measured. A strong yellow emission centered at 2.0 eV was observed for the Al-doped specimen and its intensity was higher than that of... (Read more)
- 225. Mater. Sci. Eng. B 61-62, 202 (1999) , “Carbon-vacancy related defects in 4H- and 6H-SiC”, N. T. Son, W. M. Chen, J. L. Lindstrm, B. Monemar, E. JanznElectron paramagnetic resonance (EPR) was used to study intrinsic defects in 4H- and 6H-SiC irradiated with 2.5 MeV electrons with doses ranging from 1×1017 to 2×1018 cm−2. In p-type 4H- and 6H-SiC, the dominant EPR signal, labeled EI1, associates with a defect centre having a low... (Read more)
- 226. Mater. Sci. Eng. B 58, 71 (1999) , “Hydrogen enhancement of thermally induced interface degradation in thermal (111) Si/SiO2 traced by electron spin resonance”, A. Stesmans, V. V. Afanasev.The process of interface degradation induced in (111)Si/SiO2 by postoxidation annealing (POA) in vacuum, previously identified by electron spin resonance (ESR) as creation of persistent Pb (Si/Si3) interface defects, is found to be strongly enhanced (≈6 times) when performed in H2 ambient,... (Read more)
- 227. Mater. Sci. Eng. B 58, 52 (1999) , “Dipolar Interactions between Unpaired Si Bonds at the (111)Si/SiO2 Interface”, A. Stesmans, B. Nouwen.Direct experimental evidence for the dipolar interactions within the two-dimensional Pb defect system at the Si/SiO2 interface is provided by the observation of anisotropy in the electron spin resonance spectra. This observation was enabled through distinct interface degradation by post-oxidation... (Read more)
- 228. Mater. Sci. Eng. B 58, 171-178 (1999) , “Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and S. Zh. TokmoldinRecent deep level transient spectroscopy (DLTS), electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy data on interactions of self-interstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was... (Read more)
- 229. Microelectron. Eng. 48, 113 (1999) , “Nature of the Pb1 Interface Defect in (100)Si/SiO2 as Revealed by Electron Spin Resonance 29Si Hyperfine Structure”, A. Stesmans, V. V. Afanasev.Observation by electron spin resonance of the full angular dependence of the hyperfine (hf) interaction spectrum associated with the interfacial Pb1 defect in thermal (100)Si/SiO2 shows that the dominant interaction arises from a single 29Si atom. The hf tensor displays weakly monoclinic I (nearly... (Read more)
- 230. Phys. Rev. B 60, 8304 (1999) , “Mn impurity in Ga1-xMnxAs epilayers”, J. Szczytko, A. Twardowski, K. ?wi?tek, M. Palczewska, M. Tanaka, T. Hayashi, K. AndoElectron paramagnetic resonance was measured in Ga1-xMnxAs/GaAs epilayers with 0.002<~x<~0.01. Data were taken as a function of magnetic field orientation at low temperatures. The observed spectra were attributed to ionized Mn acceptor A-. No neutral Mn... (Read more)
- 231. Phys. Rev. B 60, 5417 (1999) , “Magnetic circular dichroism of the 1.404-eV interstitial nickel absorption transition in high-pressure synthetic diamond”, P. W. Mason, F. S. Ham, and G. D. WatkinsA high-resolution magnetic circular dichroism (MCDA) study of the sharp 1.404-eV zero-phonon absorption line associated with interstitial nickel in high-pressure synthetic diamond is reported. A model is presented attributing the absorption to internal transitions within the 3d9... (Read more)
- 232. Phys. Rev. B 60, 5392 (1999) , “EPR spectra of separated pairs of substitutional nitrogen atoms in diamond with a high concentration of nitrogen”, V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, D. J. Twitchen, M. E. Newton, A. Hofstaetter, B. FeigelsonElectron paramagnetic resonance (EPR) measurements are reported in synthetic diamonds grown in an Fe-Ni-C solvent/catalyst system at 1750 K, under stabilizing pressure, by the temperature gradient method. Such diamonds are known to have high concentrations of nitrogen. EPR spectra have been found in... (Read more)
- 233. Phys. Rev. B 59, 4849 (1999) , “Electron-spin-resonance center of dangling bonds in undoped a-Si:H”, T. Umeda, S. Yamasaki, J. Isoya, K. Tanaka.A variety of electron-spin-resonance (ESR) spectra of dangling bond (g=2.0055) in undoped hydrogenated amorphous silicon (a-Si:H) have been measured by the echo-detected ESR of pulsed ESR as well as the usual continuous-wave (cw) ESR for a wide range of two experimental parameters of microwave... (Read more)
- 234. Phys. Rev. B 59, 2773 (1999) , “Electron Paramagnetic Resonance and Photoluminescence Study of Er-Impurity Complexes in Si”, J. D. Carey, R. C. Barklie, J. F. Donegan, F. Priolo, G. Franz, S. Coffa.Electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy have been used to examine the structure and optical properties of erbium-impurity complexes formed in float-zone Si by multiple-energy implants at 77 K of Er together with either O or F. After implantation a 2-?m-thick... (Read more)
- 235. Phys. Rev. B 59, 12900 (1999) , “Electron-paramagnetic-resonance measurements on the divacancy defect center R4/W6 in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. BanholzerElectron-paramagnetic-resonance (EPR) studies in radiation damaged diamond enriched to 5% 13C have resulted in the identification of the nearest-neighbor divacancy center. It is the isotopic enrichment, and consequent observation of 13C hyperfine lines, that has permitted the... (Read more)
- 236. Phys. Rev. Lett. 83, 3254 (1999) , “Magnetospectroscopy of Acceptors in Blue Diamonds”, H. Kim, A. K. Ramdas, S. Rodriguez, M. Grimsditch, T. R. AnthonyThe Zeeman effect of the Δ′ [1s(p3/2):Γ8→1s(p1/2):Γ7] Raman line of boron acceptors in diamond exhibits the predicted eight components and four transitions within the Γ8 multiplet, discovered under diverse polarization... (Read more)
- 237. Phys. Solid State 41, 783 (1999) , “Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: recent EPR studies”, P. G. Baranov, I. V. Il'in, E. N. Mokhov, V. A. KhramtsovEPR studies of transition-element ions in SiC and GaN and of erbium in 6H-SiC are reported. Data are presented on Sc2+ ions and scandium acceptors, and chromium and molybdenum ions in various charge states in SiC. A study was made of nickel and manganese in nominally pure GaN grown by the sandwich sublimation method. The first EPR investigation of Er in 6H-SiC is reported. Erbium was identified from the hfs of the EPR spectra. Various possible models of erbium centers in silicon carbides are discussed. Strong room-temperature erbium-ion luminescence was observed. (Read more)
- 238. Phys. Solid State 41, 712 (1999) , “Radiospectroscopy of wide-gap semiconductors: SiC and GaN”, P. G. BaranovThe present report submitted to the Anniversary Conference of the A. F. Ioffe Physicotechnical Institute, “Physics at the Turn of the 21st Century,” deals with recent EPR studies of main impurities in the wide-gap semiconductors SiC and GaN, which appear to be the most promising materials for microelectronics and quantum semiconductor electronics at the start of the 21st century. (Read more)
- 239. phys. stat. sol. (a) 174, 137 (1999) , “Effect of Stress on Optical and ESR Lines in CVD Diamond”, K. Iakoubuvskii, A. Stesmans, G. J. Adriaenssens, R. Provoost, R. E. Silverans, V. RaikoCorrelation between the shape of Raman, photoluminescence (PL) and Electron Spin Resonance (ESR) signals in CVD diamond films was examined for both undoped and nitrogen-doped films. No correlation was observed between the shift of the diamond Raman line and its linewidth, even for the films produced... (Read more)
- 240. phys. stat. sol. (a) 172, 113 (1999) , “On Photocurrent (and EPR) Study of Defect Levels in CVD Diamond”, J. Rosa, M. Van??ek, M. Nesldek, L. M. StalsPhotocurrent spectroscopy is used for studying electronic defect states in the gap of optical-quality CVD diamond. The constant photocurrent method (CPM), allowing to measure the optical (photoionization) cross-section of defects, is applied on samples with a different surface treatment. The... (Read more)
- 241. phys. stat. sol. (b) 215, 109 (1999) , “Zeeman Effect of Lyman Transitions: Electronic Raman Spectrum of Boron Acceptors in Diamond”, H. Kim, R. Vogelgesang, A. K. Ramdas, S. Rodriguez, M. Grimsditch, T. R. AnthonySubstitutional boron impurities in diamond exhibit characteristic Lyman transitions, originating in the lower 1s(p3/2): 8 ground state and terminating in its spin-orbit split 1s(p1/2): 7 counterpart. In addition to the Lyman spectrum observed in the... (Read more)
- 242. Physica B 273-274, 938 (1999) , “Confinement Effects on Phosphorus Donors Embedded in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz and C. A. J. AmmerlaanMagnetic resonance of shallow donor center phosphorus is used to track size-related changes of energy band structure in silicon powders. Small conduction band upshifts of several meV are determined for nanocrystals of approximately d=100 nm diameter and smaller. These are interpreted as the onset of... (Read more)
- 243. Physica B 273-274, 7-14 (1999) , “Self-interstitials in semiconductors: what we are learning from interstitial Zn in ZnSe”, G. D. Watkins , K. H. ChowInterstitial Zn+i has been observed in ZnSe by optical detection of EPR to be on-center in either Td interstitial site – that surrounded by four Se atoms, (Zni)+Se, or by four Zn atoms, (Zni)+Zn. This can be understood by a simple universal model which predicts stability for an interstitial... (Read more)
- 244. Physica B 273-274, 651 (1999) , “New paramagnetic defects in synthetic diamonds grown using nickel catalyst”, A. J. Neves, R. Pereira, N. A. Sobolev, M. H. Nazaré, W. Gehlhoff, A. Näser and H. KandaWe report four new EPR spectra found in high-pressure synthetic diamonds with high nitrogen content, grown using nickel, and annealed at 1600°C. Analyzing the complex spectra around g≈2 two trigonal and two orthorhombic defects, all with , were identified from the angular dependence and... (Read more)diamond| EPR| AB1 AB2 AB3 AB4 .inp files: diamond/AB1 diamond/AB2 diamond/AB3 diamond/AB4 | last update: Masatoshi Sasaki
- 245. Physica B 273-274, 647 (1999) , “Transition metals in diamond: experimental and theoretical identification of Co–N complexes”, Karl Johnston, Alison Mainwood, Alan T. Collins, Gordon Davies, Daniel Twitchen, J. M. Baker and Mark NewtonDiamonds grown using a cobalt/iron catalyst and annealed at 1800°C were studied using two experimental techniques. A zero-phonon line, observed in photoluminescence at 2.367 eV, showed the splitting under uniaxial stress characteristic of an optical transition at a defect of trigonal symmetry.... (Read more)
- 246. Physica B 273-274, 644 (1999) , “The production and annealing stages of the self-interstitial (R2) defect in diamond”, D. J. Twitchen, D. C. Hunt, C. Wade, M. E. Newton, J. M. Baker, T. R. Anthony and W. F. BanholzerWe report on the production rate of the neutral 0 0 1-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110–350 K with 2 MeV electrons... (Read more)
- 247. Physica B 273-274, 632 (1999) , “Ab initio calculations of hyperfine interactions for vacancy and Ni point defects in diamond”, U. Gerstmann, M. Amkreutz and H. OverhofWe calculate total energies and hyperfine interactions for the VC− ground state and the VC*0 excited state of the vacancy in diamond. The comparison with experimental data shows that the local spin density approximation gives reliable spin densities not only for ground states, but also for... (Read more)
- 248. Physica B 273-274, 624 (1999) , “Jahn–Teller splitting and Zeeman effect of acceptors in diamond”, Hyunjung Kim, S. Rodriguez, M. Grimsditch, T. R. Anthony and A. K. RamdasEmploying the high resolution of a 5+4 tandem Fabry–Pérot interferometer, we discovered that Δ′, the Raman active electronic transition between the spin–orbit split 1s(p3/2) : Γ8 and 1s(p1/2) : Γ7 acceptor ground states, is a doublet for a boron impurity... (Read more)
- 249. Physica B 273-274, 524 (1999) , “Tin-Vacancy Complexes in e-Irradiated n-Type Silicon”, Marco Fanciulli and Jørgen R. BybergElectron irradiated n-type float-zone silicon containing tin has been investigated by EPR. In addition to the well known Si-G29 signal due to the SnV0 complex we have observed a group of similar EPR signals with strongly anisotropic, near-trigonal g tensors, which we label DK4. The corresponding... (Read more)
- 250. Physica B 273-274, 445 (1999) , “ESR study of Fe–H complexes in Si”, Toru Takahashi and Masashi SuezawaWe studied the influence of hydrogen (H) on the properties of Fe in Si crystals based on ESR measurement. Specimens were prepared from an n-type Si crystal (phosphorus concentration; 1.5×1016 cm−3). After chemical polishing, they were doped with 57Fe by a vapor method and with H by... (Read more)
- 251. Physica B 273-274, 404 (1999) , “Dependence of Electrically Detected Magnetic Resonance Signal Shape from Iron-Contaminated Silicon Wafers on the Thermal Treatment of the Samples”, T. Mchedlidze, K. Matsumoto, T. C. Lin, M. Suezawa.The shape of the electrically detected magnetic resonance (EDMR) signal from iron–contaminated Czochralski-grown silicon (CZ–Si) samples strongly depends on the thermal treatments applied to the samples before and after the contamination procedure, although the average g-value of the... (Read more)
- 252. Physica B 273-274, 350 (1999) , “Structure of Er-Related Centers in Si”, J. D. Carey and F. PrioloElectron paramagnetic resonance (EPR) measurements have been performed on samples of Er implanted FZ Si which have been co-implanted with O ions. For an Er concentration of 1019/cm3 well-defined Er3+ centers with monoclinic and trigonal symmetry are observed in samples with 1020 O/cm3 but are... (Read more)
- 253. Physica B 273-274, 296 (1999) , “Assignment of EPR Spectrum for Bistable Thermal Donors in Silicon”, L. F. Makarenko, N. M. Lapchuk and Ya. I. LatushkoIt has been shown that bistability of thermal double donors (TDD) in silicon can be observed by EPR technique. The spectrum of a bistable TDD species (TDD2) has been isolated using heat-treatment of Czochralsky-grown n-type silicon crystals with initial resistivity 4.5 Ω cm, at temperature... (Read more)
- 254. Physica B 273-274, 279 (1999) , “Identification of Cadmium-Related Centers in Silicon”, A. Näser, W. Gehlhoff and H. OverhofThe electronic and geometric structures of a new Cd-related center with trigonal symmetry is investigated by electron paramagnetic resonance (EPR). Isotope doping with the isotopes 111Cd and 57Fe confirmed, that the defect consists of one single Cd atom and one isolated Fe atom with a center axis in... (Read more)
- 255. Physica B 273-274, 264 (1999) , “EPR proof of the negatively charged acceptor state Zn− in silicon”, W. Gehlhoff, A. Nser, H. Bracht.The electronic properties of Zn in monocrystalline silicon were studied by means of electron paramagnetic resonance (EPR). In high-ohmic p- and n-type Si doped with Zn two new line sets were observed. One of them show the characteristic behavior of the and transitions of a Γ8 state in... (Read more)
- 256. Physica B 273-274, 256 (1999) , “Infrared Absorption Study of a New Dicarbon Center in Silicon”, E. V. Lavrov, B. Bech Nielsen, J. Byberg and J. L. LindströmInfrared absorption measurements on n-type silicon doped with carbon and irradiated with electrons at room temperature have revealed new absorption lines at 527.4 and 748.7 cm−1. The 748.7 cm−1 line is observed only when the sample is cooled down in the dark and the spectra are... (Read more)
- 257. Physica B 273-274, 239 (1999) , “Atomic and Electronic Structure of Hydrogen-Passivated Double Selenium Donors in Silicon”, P. T. Huy, C. A. J. Ammerlaan and T. GregorkiewiczSelenium–hydrogen-related defects in silicon have been investigated by magnetic resonance. Two new electron paramagnetic resonance (EPR) spectra Si-NL60 and Si-NL61 of selenium–hydrogen complexes were observed. By application of the electron nuclear double resonance (ENDOR) and field... (Read more)
- 258. Physica B 273-274, 204 (1999) , “Hydrogen Interactions with Interstitial- and Vacancy-Type Defects in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin and Yu. V. GorelkinskiiIR and EPR studies of hydrogen interactions with defects in silicon implanted with protons and deuterons were carried out. An analysis of temperature dependence of Si–H local mode anharmonicity, using isotope substitution of H by D, revealed that anharmonicity is sensitive to the environment... (Read more)
- 259. Physica B 273-274, 180 (1999) , “The A Center Binding a Single Hydrogen Atom in Crystalline Silicon Observed by EPR”, P. Johannesen, J. R. Byberg, B. Bech Nielsen.Electron paramagnetic resonance measurements on proton- and deuteron-implanted silicon crystals reveal a new signal from a vacancy-type defect with spin , which is observable only in oxygen-rich material. The signal is strongly temperature-dependent, displaying monoclinic-I symmetry below 180 K and... (Read more)
- 260. Physica B 273-274, 171 (1999) , “Hydrogen-Induced Extended Complexes in Silicon”, Yu. V. Gorelkinskii, Kh. A. Abdullin and B. N. MukashevNew EPR spectrum, labeled Si-AA17, forms upon annealing at 200°C in irradiated high-purity hydrogen-containing silicon and is stable up to 450°C. The AA17 defect has D3d symmetry, electronic spin S=1 and it is paramagnetic in a neutral charge state. An analysis of 29Si hf interaction has... (Read more)
- 261. Physica B 273-274, 15 (1999) , “Current problems in diamond: towards a quantitative understanding”, Gordon DaviesThis paper discusses three major areas of current work on the properties of point defects in diamond: attempting to introduce a shallow donor centre, studying the rôle of transition metals, and achieving a quantitative understanding of radiation effects. Recent work on the first two topics is... (Read more)
- 262. Physica B 273-274, 113 (1999) , “Electron paramagnetic resonance (EPR) and optical absorption studies of defects created in diamond by electron irradiation damage at 100 and 350 K”, D. J. Twitchen, D. C. Hunt, M. E. Newton, J. M. Baker, T. R. Anthony and W. F. BanholzerWe present a study, using electron paramagnetic resonance (EPR) and optical absorption spectroscopies, of high purity synthetic type IIa diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar; allowing irradiation at a measured sample temperature down to 100 K, at... (Read more)
- 263. Physica B 273-274, 1015 (1999) , “Electron spin resonance study of the interaction of hydrogen with the (1 1 1)Si/SiO2 interface: Pb-hydrogen interaction kinetics”, A. Stesmans.The thermal interaction kinetics of interfacial Si dangling bond Pb defects (Si3≡Si·) in (1 1 1)Si/SiO2, including passivation in molecular hydrogen (pictured as PbH formation) and dissociation in vacuum, is readdressed. An initial simple thermal model had concluded simple exponential... (Read more)
- 264. Solid State Commun. 112, 541-544 (1999) , “A new EPR centre of Er3+ in MgO or ZnO co-doped LiNbO3 single crystals”, D. Bravo, A. Martn , F. J. LpezElectron Paramagnetic Resonance (EPR) experiments have been carried out on congruent crystals of LiNbO3 heavily doped with Mg or Zn and co-doped with Er. In addition to the EPR spectrum previously observed in crystals of LiNbO3:Er3+ an erbium spectrum not reported before is detected in samples... (Read more)
- 265. Solid State Commun. 111, 397 (1999) , “EPR of new nickel–nitrogen center in annealed synthetic diamond”, R. I. Mashkovtsev and Yu. N. Pal'yanovIn addition to the NE1 and NE2 centers a new EPR center with S=1/2, which we have labeled the RM1 center, has been found in synthetic diamond grown from the Ni solvent and annealed at 2300 K. The RM1 spectrum appears as a pattern of nine lines with intensity distribution near 1:4:10:16:19:16:10:4:1... (Read more)
- 266. Solid State Commun. 110, 593-598 (1999) , “Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulating GaAs”, S. A. Goodman, F. K. Koschnick, Ch. Weber, J. -M. Spaeth and F. D. AuretThe defects introduced in a bulk semi-insulating (SI) GaAs by a 6-MeV proton irradiation at 300 K were investigated with the electron paramagnetic resonance (EPR) detected via the magnetic circular dichroism of the optical absorption. EL2 defects (EL20 and EL2+) are introduced by proton irradiation... (Read more)
- 267. Thin Solid Films 353, 20 (1999) , “Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance”, V. A. Gritsenko, K. S. Zhuravlev, A. D. Milov, Hei Wong, R. W. M. Kwok and J. B. XuPhotoluminescence (PL) properties of SiNx (0.51<x<1.3) films are studied. A visible luminescence near the UV region is observed and the PL intensity and peak positions are found to be governed by the excess silicon composition. A large scale potential fluctuation due to the spatial... (Read more)
- 268. Appl. Phys. A 67, 209 (1998) , “Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance”, A. Kawasuso, H. Itoh, N. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama, S. Okada, H. Okumura, S. YoshidaPositron lifetime and electron spin resonance (ESR) measurements were performed for 1-MeV electronirradiated cubic silicon carbide (3C-SiC). From a comparison of the annealing behaviors of positron lifetime and ESR signal, we identified the annihilation of positrons localized at single-negative silicon vacancies. The positron lifetime at silicon vacancies was first determined experimentally to be 188|±|4 ps. This value agrees well with the theoretical positron lifetime for silicon vacancies [G. Brauer et al. Phys. Rev. B 54, 2512 (1996)]. The trapping coefficient of singlenegative silicon vacancies was also derived. (Read more)
- 269. Appl. Phys. Lett. 73, 3250 (1998) , “Electron Paramagnetic Resonance Evidence for Reversible Transformation of Thermal Donor into Shallow Donor-Type Center in Hydrogen-Implanted Silicon”, B. Rakvin, B. Pivac, R. Tonini, F. Corni, G. Ottaviani.Electron paramagnetic resonance spectrum of the proton-related thermal donor (TD) assigned as NL8 paramagnetic center has been detected at 110 K after heat treatment of the hydrogen-implanted Czochralski-Si at 773 K. The effect of temperature on reversible transformations of the anisotropic spectrum... (Read more)
- 270. Appl. Phys. Lett. 73, 1119 (1998) , “Silicon Di-Interstitial in Ion-Implanted Silicon”, Young Hoon LeeA new Si di-interstitial model is derived from the Si-P6 electron paramagnetic resonance spectrum observed in neutron-, proton-, or ion-implanted silicon. Two Si interstitials lie in the {100} plane at a position considerably off from two tetrahedral interstitial sites nearby, sharing one Si... (Read more)
- 271. Appl. Phys. Lett. 72, 2271 (1998) , “Hydrogen-Induced Thermal Interface Degradation in (111) Si/SiO2 Revealed by Electron-Spin Resonance”, A. Stesmans, V. V. Afanasev.Electron-spin resonance (ESR) experiments show that the interface degradation induced in thermal (111) Si/SiO2 by postoxidation annealing (POA) in vacuumpreviously isolated by ESR as a permanent creation of Pb (SiSi3) interface defectsis... (Read more)
- 272. Diamond Relat. Mater. 7, 333 (1998) , “Correlation between optical absorption and EPR in high-pressure diamond grown from a nickel solvent catalyst”, A. T. Collins, H. Kanda, J. Isoya, C. A. J. Ammerlaan, J. A. van WykThere is a general tendency for the magnitude of the W8 electron paramagnetic resonance, attributed to substitutional negatively charged nickel, Nis−, to increase in sympathy with the strengths of the 1.883 eV and 2.51 eV absorption bands in high-pressure synthetic diamond. The ratio of the... (Read more)
- 273. Diamond Relat. Mater. 7, 1558 (1998) , “Relationship between electronic states of nickel-containing centres and donor nitrogen in synthetic and natural diamonds”, V. Nadolinny, A. Yelisseyev, O. Yurjeva, A. Hofstaetter, B. Meyer and B. FeigelsonSome features of the charge transfer process in donor nitrogen and nickel centres on exposure to X-ray and light illumination, have been examined in natural and synthetic diamonds by EPR and optical absorption. Donor nitrogen has been shown to serve as a bulk charge compensator of the paramagnetic... (Read more)
- 274. Diamond Relat. Mater. 7, 1282 (1998) , “A new proposal for the structure of platelets in diamond”, J. M. BakerA new model is proposed for platelets in diamond that is based upon the unambiguously determined molecular structure of the EPR centre known as R1, which comprises two parallel [001] split interstitials at nearest neighbour positions in the plane. The new feature of the model is the structure of... (Read more)
- 275. J. Appl. Phys. 84, 6782 (1998) , “Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition”, T. Ishiyama, E. Katayama, K. Murakami, K. Takahei, A. TaguchiWe have performed electron spin resonance (ESR) measurements on Er-doped GaAs grown with oxygen codoping by metal organic chemical vapor deposition. An isotropic line (an effective g value, g = 5.95) which had been already reported was observed in samples without oxygen codoping. On... (Read more)
- 276. J. Appl. Phys. 84, 4847 (1998) , “Stress-Induced Alignment and Reorientation of Hydrogen-Associated Donors in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi, and Kh. A. AbdullinElectron paramagnetic resonance (EPR) studies have been made of the stress-induced alignment and the subsequent recovery of the double donor (AA1 EPR center) that is formed in float-zone silicon following hydrogen implantation and annealing for ~ 20 min at a temperature above ~ 300 °C. The... (Read more)
- 277. J. Appl. Phys. 83, 4042 (1998) , “Electrically Detected Magnetic Resonance Signal from Iron Contaminated Czochralski Silicon Crystal”, T. Mchedlidze and K. MatsumotoThe electrical detection of magnetic resonance (EDMR) measurement, a detection method for the spin-dependent recombination, was applied to characterize iron contaminated silicon samples grown by the Czochralski method. The observed signal was different than previously reported electron paramagnetic... (Read more)
- 278. J. Appl. Phys. 83, 2449-2457 (1998) , “Electron spin resonance features of interface defects in thermal (100)Si/SiO2”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) on thermal (100)Si/SiO2 predominantly exhibiting either the Pb0 or Pb1 interface defect confirms the Pb1 point symmetry as monoclinic-I with g1 = 2.0058,... (Read more)
- 279. J. Chem. Phys. 109, 8471 (1998) , “Temperature dependence of spin-spin and spin-lattice relaxation times of paramagnetic nitrogen defects in diamond”, E. C. Reynhardt, G. L. High, J. A. van WykSpin-lattice relaxation times of P1 centers in a suite of two natural type Ib, two synthetic type Ib, and one natural type Ia diamonds were measured at 9.6 GHz as a function of temperature in the range 300 K > T > 4.2 K. An analysis of the results revealed that for three of the diamonds... (Read more)
- 280. J. Non-Cryst. Solids 241, 71-73 (1998) , “Long luminescent glass: Tb3+-activated ZnO–B2O–SiO2 glass”, Masaaki Yamazaki, Yoshinori Yamamoto, Shinobu Nagahama, Naruhito Sawanobori, Masafumi Mizuguchi , Hideo HosonoIt has been found that zinc borosilicate glasses 60ZnO–20B2O3–20SiO2 doped with 0.2 mol% Tb2O3 exhibit phosphorescence after exciting with 254 nm light. This phosphorescence arises from f–f transitions of Tb3+ ions and is observable by the eye, in the dark for up to 1 h after... (Read more)
- 281. J. Non-Cryst. Solids 239, 16-48 (1998) , “Optically active oxygen-deficiency-related centers in amorphous silicon dioxide”, Linards SkujaThe spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic... (Read more)GeO2 SiO2| EPR PL gamma-irradiation optical-spectroscopy| 0.5-1.0eV 1.0eV~ 1H 2.0eV~ 3.0eV~ 4.0eV~ 5.0eV~(larger) Chlorine E' E'-alpha E'-betha E'-delta E'-gamma Germanium H(I) H(II) Hydrogen ODC ODC(I) ODC(II) OHC Oxygen POR Silicon amorphous dangling-bond dielectric interstitial pair(=2) surface triplet vacancy | last update: Takahide Umeda
- 282. J. Phys.: Condens. Matter 10, L465 (1998) , “29Si Hyperfine Structure of the Pb1 Interface Defect in Thermal (100)Si/SiO2”, A. Stesmans, B. Nouwen, V. V. Afanasev.The observation of the electron spin resonance hyperfine (hf) spectra associated with the unpaired electron of the interface defect in thermal shows that the dominant interaction arises from a single isotope. The hf tensor displays weakly monoclinic I (nearly axial) symmetry, with the... (Read more)
- 283. J. Phys.: Condens. Matter 10, L19 (1998) , “Undetectability of the Pb1 Point Defect as an Interface State in Thermal (100)Si/SiO2”, A. Stesmans, V. V. Afanasev.The electrical activity of the electron-spin-resonance-active interfacial point defects and (unpaired Si bonds) has been examined on standard thermal . After elimination of the H-passivation factor, this has been achieved through combination of electrical and ESR analysis on common suites of... (Read more)
- 284. J. Phys.: Condens. Matter 10, 9833 (1998) , “Optically detected electron paramagnetic resonance of Ni-related defects in synthetic diamond crystals”, Th. Pawlik, C. Noble, J. -M. SpaethSynthetic diamond crystals grown using a solvent catalyst that contains Ni were studied by optical detection of electron paramagnetic resonance (ODEPR) using the magnetic circular dichroism of the optical absorption (MCDA). The MCDA spectra in the infrared spectral region consist of a... (Read more)
- 285. J. Phys.: Condens. Matter 10, 89 (1998) , “Positively Charged Bonded States of Hydrogen at the (111)Si/SiO2 Interface”, V. V. Afanasev, A. Stesmans.Annealing of thermal in hydrogen in the temperature range is found to introduce a considerable density (up to ) of positively charged centres, ascribed to H bonding. However, there is no comparable density of dangling bonds initially present nor generated at the interface that could account for... (Read more)
- 286. J. Phys.: Condens. Matter 10, 11781 (1998) , “Electron paramagnetic resonance investigations of nickel defects in natural diamonds”, C. J. Noble, Th. Pawlik, J. -M. SpaethElectron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) spectra of natural blue diamonds from the Argyle mine in Western Australia are reported for the first time. These diamonds are shown to contain the NE2 centre which has been observed primarily in synthetic diamonds... (Read more)
- 287. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 288. Mater. Lett. 33, 247-250 (1998) , “Electron spin resonance properties of ZnO microcrystallites”, Baolong Yu, Congshan Zhu, Fuxi Gan , Yabin HuangThe preparation of ZnO microcrystallites using a microemulsion method and their electron spin resonance (ESR) properties are reported for the first time. It was found that the ZnO microcrystallite exhibits an ESR signal at room temperature, in contrast to that of bulk ZnO. The results confirmed that... (Read more)
- 289. Mater. Sci. Eng. B 54, 38-42 (1998) , “Detection and analysis of 29Si hyperfine structures in ESR spectra of E′ and E′-type centers in SiO2 glasses”, M. Mizuguchi, H. Hosono, H. KawazoeFour sets of ESR doublets with splittings of 9, 23, 26 or 44 mT were observed in dry a-SiO2 (Type IV, OH concentrations1017 cm−3) implanted with 29Si+ to a fluence of 6×1016 cm−2 at 160 keV. These doublets were attributed to the hyperfine structures due to a 29Si nucleus of... (Read more)
- 290. Materials Lett. 34, 143 (1998) , “Defect formation in electron-irradiated synthetic diamond annealed in the temperature range 820–1120 K”, E. M. Shishonok, V. B. Shipilo, G. P. Popelnuk, I. I. Azarko, A. A. Melnikov and A. R. FilippThe phenomenon of the extreme increase of the concentration of dispersed paramagnetic nitrogen in electron-irradiated synthetic diamond specimens annealed in the temperature range 820–1120 K was revealed. It is established that the order of the reaction responsible for the decrease of... (Read more)
- 291. Nucl. Instrum. Methods Phys. Res. B 141, 566-574 (1998) , “Defect formation in amorphous SiO2 by ion implantation: Electronic excitation effects and chemical effects”, H. Hosono, N. MatsunamiIntrinsic defect formation in amorphous (a-) SiO2 by ion implantation was examined with emphasis upon electronic excitation effects and chemical reaction effects. 10 MeV proton beam and boron beam irradiated silica platelets to examine electronic excitation effects and chemical reaction effects. In... (Read more)
- 292. Nucl. Instrum. Methods Phys. Res. B 135, 260 (1998) , “Defect production in silicon irradiated with 750 MeV Ar ions1”, Z. Zhu, M. Hou, Y. Jin, C. Liu, Y. Wang, J. Han.Specimens of about 320 μm thick and 1 1 1 oriented single crystalline silicon are irradiated with 750 MeV argon ions at room temperature to dose levels of 9×1013 and 4.3×1014 Ar/cm2. Positron lifetime measurements, fourier transform infrared absorption (FT–IR) and electron... (Read more)
- 293. Nucl. Instrum. Methods Phys. Res. B 135, 219 (1998) , “Damage production in silicon irradiated with 112 MeV Ar ions1”, C. Liu, M. Hou, Z. Zhu, Z. Wang, S. Cheng, Y. Jin, Y. Sun, C. Li.Silicon samples were irradiated below 50 K with 112 MeV Ar ions. Defect production was investigated at room temperature by EPR and infrared optical absorption techniques. The EPR measurements reveal the presence of amorphous zones and neutral tetravacancies (Si–P3 center) in the as-irradiated... (Read more)
- 294. Phys. Rev. B 58, 7707 (1998) , “Optically detected magnetic resonance study of an arsenic-antisite–arsenic-vacancy complex in GaAs”, F. K. Koschnick, K.-H. Wietzke, and J.-M. SpaethAn arsenic-antisite-related defect produced in n-type GaAs by 2 MeV electron irradiation was investigated using magnetic circular dichroism of the optical absorption (MCDA), MCDA-detected electron paramagnetic resonance (MCDA-EPR), and MCDA-detected electron-nuclear double resonance (MCDA-ENDOR). In... (Read more)
- 295. Phys. Rev. B 58, 7007 (1998) , “Sulfur-Related Metastable Luminescence Center in Silicon”, P. W. Mason, H. J. Sum, B. Ittermann, S. S. Ostapenko, G. D. Watkins, L. Jeyanathan, M. Singh, G. Davies, E. C. Lightowlers.Optical detection of magnetic resonance (ODMR) and photoluminescence (PL) studies are described for the sulfur-related metastable defect in silicon first reported by Brown and Hall. It is established that its two configurations, A and B, are of triclinic (C1) symmetry, and the... (Read more)
- 296. Phys. Rev. B 58, 3842 (1998) , “Electron Paramagnetic Resonance Study of Hydrogen-Vacancy Defects in Crystalline Silicon”, P. Stallinga, P. Johannesen, S. Herstm, K. Bonde Nielsen, B. Bech Nielsen, J. R. Byberg.Electron paramagnetic resonance measurements on float-zone silicon implanted with protons at ?50 K followed by heating to room temperature have revealed two signals S1a and S1b belonging to the S1 group of signals. S1a and S1b both originate from defects... (Read more)
- 297. Phys. Rev. B 58, 15801-15809 (1998) , “Pb1 interface defect in thermal (100)Si/SiO2: 29Si hyperfine interaction”, A. Stesmans, B. Nouwen, V. V. AfanasevAn optimized electron spin resonance study has resulted in the observation of the full angular dependence of the hyperfine interaction spectrum associated with the unpaired electron of the Pb1 point defect at the thermal (100)Si/SiO2 interface, showing that the dominant... (Read more)
- 298. Phys. Rev. B 57, 9657 (1998) , “Self-Interstitial Shallow-Donor Complexes in Silicon: An Electron-Paramagnetic-Resonance Study”, O. Scheerer, U. Juda, and M. HhneAn electron-paramagnetic-resonance (EPR) study on silicon samples quenched after diffusion of gold (or platinum) from a metallic layer on the surface results in the presence of two types of paramagnetic centers replacing the donor P center. According to the analysis these centers consist of a P... (Read more)
- 299. Phys. Rev. B 57, 2302 (1998) , “EPR and optical studies on polycrystalline diamond films grown by chemical vapor deposition and annealed between 1100 and 1900 K”, D. F. Talbot-Ponsonby, M. E. Newton, J. M. Baker, G. A. Scarsbrook, R. S. Sussmann, A. J. WhiteheadThe affect of annealing polycrystalline chemical vapor deposition (CVD) diamond in vacuo up to 1900 K has been studied using electron paramagnetic resonance (EPR) and infrared absorption. The concentration of the EPR centers at g=2.0028 and the infrared absorption in the CH region are insensitive to... (Read more)
- 300. Phys. Rev. B 57, 2264 (1998) , “Multifrequency EPR, 1H ENDOR, and saturation recovery of paramagnetic defects in diamond films grown by chemical vapor deposition”, D. F. Talbot-Ponsonby, M. E. Newton, J. M. Baker, G. A. Scarsbrook, R. S. Sussmann, A. J. Whitehead, S. PfenningerParamagnetic defects in free-standing polycrystalline chemical vapor deposition (CVD) diamond films have been studied using multifrequency electron paramagnetic resonance (EPR) (135 GHz), electron-nuclear double resonance (ENDOR), saturation recovery, and infrared absorption. The results confirm... (Read more)
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