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- 351. Appl. Phys. Lett. 88, 193502 (2006) , “Role of oxygen vacancy in HfO2/SiHfO2/Si(100) interfaces”, D.-Y. Cho, S.-J. Oh, Y. J. Chang, T. W. Noh, R. Jung, J.-C. LeeWe have investigated the interface states in HfO2/SiO2/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO2 film thickness exceeds 11 Å, the film... (Read more)
- 352. Appl. Phys. Lett. 88, 191904 (2006) , “Luminescence from Nd- and Dy-ion-implanted 4H–SiC”, Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, and Teruaki MotookaCathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4HSiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after... (Read more)
- 353. Appl. Phys. Lett. 88, 183506 (2006) , “Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium”, E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, S. Forment, and P. ClauwsNickel-germanide Schottky barriers have been made on n-type germanium and evaluated by deep level transient spectroscopy in order to detect possible metal indiffusion during the 30 s rapid thermal annealing (RTA) employed for the germanidation. It is shown that while no electron traps have... (Read more)
- 354. Appl. Phys. Lett. 88, 182903 (2006) , “Effects of Al addition on the native defects in hafnia”, Q. Li, K. M. Koo, W. M. Lau, P. F. Lee, J. Y. Dai, Z. F. Hou, X. G. GongTwo occupied native defect bands are experimentally detected in pure HfO2. The density of states of band one in the middle of the band gap reduces drastically with the Al addition, while that of band two slightly above the valence-band maximum remains rather unaffected. We attribute the... (Read more)
- 355. Appl. Phys. Lett. 88, 182103 (2006) , “Observation of minority-carrier traps in InGaN/GaN multiple-quantum-well light-emitting diodes during deep-level transient spectroscopy measurements”, J. W. Kim, G. H. Song, J. W. LeeAn unusual appearance of a peak in the deep-level transient spectroscopy (DLTS) data for minority-carrier traps from an InGaN/GaN multiple-quantum-well (MQW) light-emitting diode, under a bias condition provided by a square pulse of varying height superimposed over the reverse-bias voltage, is newly... (Read more)
- 356. Appl. Phys. Lett. 88, 171912 (2006) , “Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams”, A. Uedono, K. Ikeuchi, T. Otsuka, K. Yamabe, K. Eguchi, M. Takayanagi, T. Ohdaira, M. Muramatsu, R. Suzuki, A. S. Hamid, T. ChikyowThe effects of nitridation on open volumes in thin HfSiOx films fabricated by metal-organic chemical vapor deposition were studied using monoenergetic positron beams. It was found that positrons were annihilated from the trapped state by open volumes that exist intrinsically in... (Read more)
- 357. Appl. Phys. Lett. 88, 162117 (2006) , “Electric-field-induced charge noise in doped silicon: Ionization of phosphorus donors”, A. J. Ferguson, V. C. Chan, A. R. Hamilton, and R. G. ClarkWe report low-frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the substrates are in the insulating regime. By measuring the SET... (Read more)
- 358. Appl. Phys. Lett. 88, 162107 (2006) , “Physical origin of threshold voltage problems in polycrystalline silicon/HfO2 gate stacks”, Dae Yeon Kim, Joongoo Kang, and K. J. ChangBased on theoretical calculations, we find that at p+ polycrystalline silicon (poly-Si)/HfO2 gates, Si interstitials are easily migrated from the electrode, forming HfSi bonds with a charge transfer to the electrode, and the resulting interface dipole raises the Fermi level... (Read more)
- 359. Appl. Phys. Lett. 88, 161906 (2006) , “Defects and acoustic properties of LiAlO2”, M. M. C. Chou, H. C. Huang, Y. F. ChangA potential piezoelectric crystal LiAlO2 with (100) orientation is grown by means of the Czochralski pulling method. The as-grown crystal is identified as a single phase with good uniformity by x-ray diffraction pattern. (001) Transmission electron microscope image showed a unique... (Read more)
- 360. Appl. Phys. Lett. 88, 161905 (2006) , “Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence”, M. Yoshikawa, R. Sugie, M. Murakami, T. Matsunobe, K. Matsuda, and H. IshidaWe developed a tapping-mode-scanning near-field optical microscope to measure near-field photoluminescence (SNOM-PL) with nanometer spatial resolution using an ultraviolet laser, and we measured the defect distribution of a Si-doped GaN film. The obtained result was compared with one measured by... (Read more)
- 361. Appl. Phys. Lett. 88, 153518 (2006) , “Negative bias temperature instability mechanism: The role of molecular hydrogen”, Anand T. Krishnan, Srinivasan Chakravarthi, Paul Nicollian, Vijay Reddy, and Srikanth KrishnanThe role of dimerization of atomic hydrogen to give molecular hydrogen in determining negative bias temperature instability (NBTI) kinetics is explored analytically. The time dependency of NBTI involving molecular hydrogen was found to obey a power law with a slope of 1/6, as opposed to the 1/4... (Read more)
- 362. Appl. Phys. Lett. 88, 153509 (2006) , “Deep energy levels in RuO2/4H–SiC Schottky barrier structures”, L. Stuchlikova, D. Buc, L. Harmatha, U. Helmersson, W. H. Chang, I. BelloRuO2/4HSiC Schottky diode structures based on n-type 4HSiC (7×1017 cm3) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient... (Read more)
- 363. Appl. Phys. Lett. 88, 153507 (2006) , “Influence of trap states on dynamic properties of single grain silicon thin film transistors”, F. Yan, P. Migliorato, R. IshiharaThe transient properties of single grainthin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient... (Read more)
- 364. Appl. Phys. Lett. 88, 152116 (2006) , “Donor and acceptor competitions in phosphorus-doped ZnO”, F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. LiuPhosphorus-doped ZnO films were grown by molecular-beam epitaxy with a GaP effusion cell as dopant source. Three growth regions were identified to obtain ZnO films with different conduction types. In the oxygen-extremely-rich region, phosphorus-doped ZnO films show n-type conduction with... (Read more)
- 365. Appl. Phys. Lett. 88, 142112 (2006) , “Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys”, R. N. Pereira, B. Bech Nielsen, J. Coutinho, V. J. B. Torres, P. R. BriddonInfrared absorption spectroscopy and ab initio density functional modeling are used to investigate hydrogen defects that are stable at and above room temperature in proton-implanted Ge-rich SiGe alloys. We find that Si atoms are effective nucleation sites for hydrogen, leading to the... (Read more)
- 366. Appl. Phys. Lett. 88, 142104 (2006) , “Defects in silicon nanowires”, R. P. WangDefects in silicon nanowires have been investigated using the electron spin resonance (ESR) method. The ESR signals consist of three features: a strong resonance at g=2.002 49, a weak line at g=2.000 48, and a broad feature at g=2.005 41. From the saturation behavior and... (Read more)
- 367. Appl. Phys. Lett. 88, 141919 (2006) , “Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals”, D. C. Reynolds, C. W. Litton, T. C. Collins, J. E. Hoelscher, J. NauseDonor-acceptor (D-A) pair spectra have been observed in the photoluminescence radiative recombination of selected donor bound exciton complexes in zinc oxide (ZnO) single crystals that have been ion implantation doped with H and Zn atoms and subsequently annealed in a nitrogen (N2)... (Read more)
- 368. Appl. Phys. Lett. 88, 141901 (2006) , “Defects in Cu2O studied by deep level transient spectroscopy”, G. K. Paul, Y. Nawa, H. Sato, T. Sakurai, and K. AkimotoHole traps in p-type Cu2O were studied by means of deep level transient spectroscopy in the heterostructure of p-Cu2O/i-ZnO/n-ZnO. In addition to the trap level at about 0.45 eV from the valance band edge, which is already reported as being due to... (Read more)
- 369. Appl. Phys. Lett. 88, 132101 (2006) , “Discovery of the deep level related to hydrogen in anatase TiO2”, Takahira Miyagi, Masayuki Kamei, Takefumi Mitsuhashi, and Atsushi YamazakiDeep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase TiO2. The epitaxial anatase-TiO2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52 eV. In... (Read more)
- 370. Appl. Phys. Lett. 88, 121914 (2006) , “Effect of C/Si ratio on deep levels in epitaxial 4H–SiC”, C. W. Litton, D. Johnstone, S. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. SchubertChanging the ratio of carbon to silicon during the epitaxial 4HSiC growth is expected to alter the dominant deep level trap, which has been attributed to a native defect. The C/Si ratio was changed from one to six during epitaxial growth of SiC. Diodes fabricated on the epitaxial layer were... (Read more)
- 371. Appl. Phys. Lett. 88, 112101 (2006) , “Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon”, T. Schenkel, J. A. Liddle, A. Persaud, A. M. Tyryshkin, S. A. Lyon, R. de Sousa, K. B. Whaley, J. Bokor, J. Shangkuan, I. ChakarovWe implanted ultralow doses (2×1011 cm2) of antimony ions (121Sb) into isotopically enriched silicon (28Si) and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed electron spin... (Read more)
- 372. Appl. Phys. Lett. 88, 101918 (2006) , “Alternating layers of vacancy-type and interstitial-type defects in Ge ion implanted silicon”, R. KöglerThe defect structure of Ge-implanted and annealed silicon was investigated. A stacked structure of alternating layers of vacancy-type defects (cavities) and interstitial-type defects (dislocation loops) was detected. These defects form a substructure within the basic dual structure consisting of a... (Read more)
- 373. Appl. Phys. Lett. 88, 101904 (2006) , “Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy”, D. Dagnelund, I. A. Buyanova, T. Mchedlidze, and W. M. ChenRadiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy is significantly improved by reduced nitrogen ion bombardment during the growth. Based on the results of temperature-dependent photoluminescence (PL) and optically detected magnetic resonance... (Read more)
- 374. Appl. Phys. Lett. 88, 092108 (2006) , “Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC/SiO2 interfaces in oxidized porous SiC”, J. L. Cantin, H. J. von Bardeleben, Yue Ke, R. P. Devaty, W. J. ChoykeThe effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (PbC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 °C and... (Read more)
- 375. Appl. Phys. Lett. 88, 091919 (2006) , “Calculation of deep carrier traps in a divacancy in germanium crystals”, J. Coutinho, V. J. B. Torres, R. Jones, A. Carvalho, S. berg, P. R. BriddonWe present an ab initio density functional study on the electronic structure and electrical properties of divacancies in Ge. Although suffering essentially different Jahn-Teller distortions when compared to the analogous defect in Si, the relative location of the electrical levels in the gap... (Read more)
- 376. Appl. Phys. Lett. 88, 091912 (2006) , “Hydrogen-vacancy related defect in chemical vapor deposition homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence”, N. Mizuochi, H. Watanabe, H. Okushi, S. Yamasaki, J. Niitsuma, T. SekiguchiHydrogen-vacancy related defect (H1) in chemical vapor deposition homoepitaxial diamond films has been investigated by electron paramagnetic resonance and cathodoluminescence. It is found that the concentration of H1 significantly decreases as the dilution... (Read more)
- 377. Appl. Phys. Lett. 88, 082113 (2006) , “Effect of charge on the movement of dislocations in SiC”, T. A. G. Eberlein, R. Jones, A. T. Blumenau, S. Öberg, P. R. BriddonSiC bipolar devices show a degradation under forward-biased operation which has been linked with a current induced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and... (Read more)
- 378. Appl. Phys. Lett. 88, 073112 (2006) , “Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network”, Yasuhiko Ishikawa, Chihiro Yamamoto, and Michiharu TabeA two-dimensional dislocation network artificially embedded in a silicon-on-insulator (SOI) layer was examined as the source of lattice strain to generate a periodic potential. A screw dislocation network with the period of 20 nm was formed in an SOI layer using a twist bonding of two SOI wafers.... (Read more)
- 379. Appl. Phys. Lett. 88, 062112 (2006) , “Electron paramagnetic resonance of a donor in aluminum nitride crystals”, S. M. Evans, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectra are obtained from a donor in aluminum nitride (AlN) crystals. Although observed in as-grown crystals, exposure to x rays significantly increases the concentration of this center. ENDOR identifies a strong... (Read more)
- 380. Appl. Phys. Lett. 88, 052110 (2006) , “Lifetime-limiting defects in n– 4H-SiC epilayers”, P. B. Klein, B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski, J. J. Sumakeris, M. J. O'LoughlinLow-injection minority carrier lifetimes (MCLs) and deep trap spectra have been investigated in n 4H-SiC epilayers of varying layer thicknesses, in order to enable the separation of bulk lifetimes from surface recombination effects. From the linear dependence of the inverse... (Read more)
- 381. Appl. Phys. Lett. 88, 023113 (2006) , “Implantation of labelled single nitrogen vacancy centers in diamond using 15N”, J. R. Rabeau and P. ReichartNitrogen-vacancy (NV) color centers in diamond were created by implantation of 7 keV 15N(I=1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV centers. The hyperfine... (Read more)
- 382. Appl. Phys. Lett. 88, 021907 (2006) , “Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer”, Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, and Kazuo AraiThe N incorporation characteristics on a 4H-SiC epitaxial layer were reinvestigated. It was found that the desorption process and thermally activated process are aspects of the N incorporation mechanism of 4H-SiC to which attention should be paid. This mechanism depends on both the rate-limiting... (Read more)
- 383. Appl. Phys. Lett. 88, 021901 (2006) , “H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98B0.02/Si structures”, L. Shao, Y. Lin, J. G. Swadener, J. K. Lee, Q. X. Jia, Y. Q. Wang, M. Nastasi, P. E. Thompson, N. D. Theodore, T. L. Alford, J. W. Mayer, P. Chen, S. S. LauAn approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related... (Read more)
- 384. Appl. Phys. Lett. 88, 012101 (2006) , “The structure of the SiO2/Si(100) interface from a restraint-free search using computer simulations”, Dominik Fischer, Alessandro Curioni, Salomon Billeter, and Wanda AndreoniThe structure of the interface between SiO2 and Si(100) is investigated using the replica-exchange method driven by classical molecular dynamics simulations based on ab initio-derived interatomic potentials. Abrupt interfaces are shown to be unstable, whereas a substoichiometric... (Read more)
- 385. J. Appl. Phys. 100, 124315 (2006) , “Magnetic resonance study of Ni nanoparticles in single-walled carbon nanotube bundles”, A. A. Konchits, F. V. Motsnyi, Yu. N. Petrov, S. P. Kolesnik, V. S. Yefanov, M. L. Terranova, E. Tamburri, S. Orlanducci, V. Sessa, and M. RossiWe present a detailed study of the electron magnetic resonance (EMR) properties of Ni nanoparticles (NPs) placed in the bundles of single-walled carbon nanotubes produced by arc discharge with Ni catalyst. The behavior of EMR signals has been investigated in the 10–300 K temperature range for... (Read more)
- 386. J. Appl. Phys. 100, 123519 (2006) , “Origin of deep level defect related photoluminescence in annealed InP”, Youwen Zhao, Zhiyuan Dong, Shanshan Miao, Aihong Deng, Jun Yang, and Bo WangDeep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), thermally stimulated current (TSC), deep level transient spectroscopy (DLTS), and positron annihilation lifetime (PAL). A noticeable broad PL peak centered at 1.3 eV has been observed in the InP... (Read more)
- 387. J. Appl. Phys. 100, 123108 (2006) , “Density functional theory investigation of N interstitial migration in GaN”, R. R. Wixom and A. F. WrightUsing density-functional total energy calculations, we investigated N interstitial migration in GaN. Two migration paths were considered. The first path confines motion to a single c-plane of the lattice, while the second path involves movement both perpendicular and parallel to the... (Read more)
- 388. J. Appl. Phys. 100, 123101 (2006) , “Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer”, Q. Sun, H. Wang, D. S. Jiang, R. Q. Jin, Y. Huang, S. M. Zhang, H. Yang, U. Jahn, and K. H. PloogThe deep level luminescence of crack-free Al0.25Ga0.75N layers grown on a GaN template with a high-temperature grown AlN interlayer has been studied using spatially resolved cathodoluminescence (CL) spectroscopy. The CL spectra of Al0.25Ga0.75N grown on a... (Read more)
- 389. J. Appl. Phys. 100, 114303 (2006) , “Influence of paramagnetic defects on multicolored luminescence from nanocrystalline silicon”, Keisuke Sato and Kenji HirakuriWe report on the correlation between paramagnetic defects and the luminescent properties of nanocrystalline silicon (nc-Si) using electron spin resonance (ESR) and photoluminescence measurements. Nanocrystalline silicon having particle sizes from 1.9 to 3.0 nm exhibited continuous luminescence... (Read more)
- 390. J. Appl. Phys. 100, 113728 (2006) , “Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons”, Katsunori Danno and Tsunenobu KimotoDeep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy (DLTS). The Z1/2 and EH6/7 centers are dominant in as-grown samples. After electron irradiation at 116 keV, by which only carbon atoms may be displaced, the... (Read more)
- 391. J. Appl. Phys. 100, 113725 (2006) , “Light- and bias-induced metastabilities in Cu(In,Ga)Se2 based solar cells caused by the (VSe-VCu) vacancy complex”, Stephan Lany and Alex ZungerWe investigate theoretically light- and bias-induced metastabilities in Cu(In,Ga)Se2 (CIGS) based solar cells, suggesting the Se–Cu divacancy complex (VSe-VCu) as the source of this hitherto puzzling phenomena. Due to its amphoteric nature, the... (Read more)
- 392. J. Appl. Phys. 100, 113531 (2006) , “Impact of silicon incorporation on the formation of structural defects in AlN”, M. Hermann, F. Furtmayr, F. M. Morales, O. Ambacher, M. Stutzmann, and M. EickhoffThe impact of Si impurities on the structural properties of AlN, grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire is studied. Under nitrogen-rich growth conditions silicon can be homogeneously incorporated up to Si concentrations of [Si]=5.2×1021... (Read more)
- 393. J. Appl. Phys. 100, 113519 (2006) , “Void growth during thermal decomposition of silicon oxide layers studied by low-energy electron microscopy”, H. Hibino, M. Uematsu, and Y. WatanabeLow-energy electron microscopy (LEEM) has been used to investigate void growth during thermal decomposition of 1–2-nm-thick silicon oxide on Si substrates. Real-time LEEM observations clarify that the void size (square root of the void area) grows linearly with time. The temperature dependence... (Read more)
- 394. J. Appl. Phys. 100, 113513 (2006) , “Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth”, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi WadaNitrogen-doping effects in silicon crystal growth have been theoretically studied using thermodynamical simulation based on first-principles calculation results. The results show that the densities of various complexes are determined in the balance between the enthalpy effects and the entropy... (Read more)
- 395. J. Appl. Phys. 100, 104904 (2006) , “Does nitrogen transport in vitreous silica only take place in molecular form?”, Q. Dong and G. HultquistIt is generally believed that nitrogen transport in vitreous silica exclusively takes place in molecular form, although no evidence for this is found in the literature. Actually, an analysis of literature data of transport of nitrogen and noble gases in vitreous silica at 900 °C suggests it may... (Read more)
- 396. J. Appl. Phys. 100, 104902 (2006) , “Concentration-dependent diffusion of hydrogen in vitreous silica”, J. Rundgren, Q. Dong, and G. HultquistWe report diffusion experiments where hydrogen permeates through a 1 mm wall of vitreous silica at 550 °C with applied gas pressures of 70, 460, 840, and 1200 mbars. For each pressure, and at steady state, the flux and the amount of hydrogen in the material are measured. Within the... (Read more)
- 397. J. Appl. Phys. 100, 104901 (2006) , “Photoluminescence and photoconductivity in CdTe crystals doped with Bi”, E. Saucedo, C. M. Ruiz, V. Bermúdez, E. Dieguez, E. Gombia, A. Zappettini, A. Baraldi, and N. V. SochinskiiDefect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at... (Read more)
- 398. J. Appl. Phys. 100, 094903 (2006) , “Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers”, V. Lebedev, V. Cimalla, T. Baumann, O. Ambacher, F. M. Morales, J. G. Lozano, and D. González.The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN(0001) pseudosubstrates is reported. The microstructure and the electron transport in InN(0001) films of varying thickness were analyzed by transmission electron microscopy... (Read more)
- 399. J. Appl. Phys. 100, 094902 (2006) , “Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network”, V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, F. M. Morales, J. G. Lozano, and D. GonzálezThe strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by reflection high-energy electron diffraction, transmission electron microscopy, and high resolution... (Read more)
- 400. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
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