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- 1. J. Appl. Phys. 100, 093507 (2006) , “A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy”, G. Battistig, N. Q. Khánh, P. Petrik, T. Lohner, L. Dobos, B. Pécz, J. García López, and Y. Morilla4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions using fluences of 4×1014, 1×1015, and 2×1015 cm−2 with current density of 2.5 µA cm−2.... (Read more)
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Updated at 2010-07-20 16:50:39
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