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- 31. Phys. Rev. B 59, 13242 (1999) , “Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures ”, C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. SchfflerStrained Si/Si0.75Ge0.25 heterostructures, grown by solid source e-beam evaporation molecular-beam epitaxy on Si(100) substrates, have been studied by electrically detected magnetic resonance. Samples with a low-temperature mobility of about 105 cm2/V s... (Read more)
- 32. Physica B 273-274, 1027 (1999) , “Capacitively detected magnetic resonance of defects in MOSFETs ”, M. S. Brandt, R. Neuberger and M. StutzmannIn p-channel enhancement MOSFETs, a spin-dependent change of the drain-gate capacitance is observed at bias voltages near accumulation. Two resonances, with g=1.9979 and g||=2.008 as well as g≈4.9 are attributed to defects induced by processing as well as to transition metal impurities. The... (Read more)
- 33. J. Appl. Phys. 84, 2193 (1998) , “Two signals in electrically detected magnetic resonance of platinum-doped silicon p–n junctions”, Yoshiaki Kamigaki, Takao Miyazaki, Naotsugu Yoshihiro, Kikuo Watanabe, and Ken'etsu YokogawaWe have found two electrically detected magnetic resonance (EDMR) signals at room temperature in forward-biased platinum (Pt)-doped (111) silicon pn junction diodes with a linearly graded junction. The g values of the two EDMR signals are 1.991 (signal 1) and 1.978 (signal... (Read more)
- 34. J. Appl. Phys. 83, 4042 (1998) , “Electrically Detected Magnetic Resonance Signal from Iron Contaminated Czochralski Silicon Crystal”, T. Mchedlidze and K. MatsumotoThe electrical detection of magnetic resonance (EDMR) measurement, a detection method for the spin-dependent recombination, was applied to characterize iron contaminated silicon samples grown by the Czochralski method. The observed signal was different than previously reported electron paramagnetic... (Read more)
- 35. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 36. phys. stat. sol. (b) 210, 389 (1998) , “Spin-Dependent Processes and Mg-Acceptors in GaN Single Quantum Well Diodes and p-Type GaN Films”, M.W.Bayerl , M.S.Brandt , H.Angerer , O.Ambacher , M.StutzmannElectrically detected magnetic resonance (EDMR) measurements at 34 GHz were performed to obtain more information about the rate limiting transport processes in blue and green InGaN single quantum well light emitting diodes. With respect to g-factor and linewidth, two centers in both diodes... (Read more)
- 37. Appl. Phys. Lett. 70, 2019 (1997) , “Paramagnetic resonance in GaN-based single quantum wells”, W. E. Carlos , Shuji NakamuraWe report electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AlGaN single-quantum-well light emitting diodes. The dominant feature detected by either technique is a broad resonance (B13 mT) at g2.01 due to a deep... (Read more)
- 38. Mater. Res. Soc. Symp. Proc. 449, 579 (1997) , “Spin resonance investigations of GaN and AlGaN”, N.MReinacher , H.Angerer , O.Ambacher , M.S.Brandt , M.Stutzmann
- 39. phys. stat. sol. (a) 159, R5 (1997) , “Electrically Detected Magnetic Resonance (EDMR) of Defects in GaN Light Emitting Diodes”, M.W.Bayerl , M.S.Brandt , M.StutzmannCompared to standard Electron Spin Resonance (ESR), EDMR has proven to be a more sensitive method in detecting paramagnetic states in semiconductors. Its application to electronic devices is particularly interesting because performance limitations in electrical transport can be correlated with... (Read more)
- 40. Appl. Phys. Lett. 68, 1669 (1996) , “Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2”, J. H. StathisA spin-dependent trap-assisted tunneling current has been detected in a thin (44.5 Å) SiO2 film. An electron paramagnetic resonance signal, obtained from the tunnel current, provides the first microscopic information regarding the identity of defects responsible for stress-induced... (Read more)
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