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- 1. Appl. Phys. Express 3, 051002 (2010) , “Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient spectroscopy and nitrogen concentration dependence of its density. It has a high capture cross section and not observed in N... (Read more)
- 2. Appl. Phys. Express 3, 031103 (2010) , “High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates”, Seunghwan Park, Tsutomu Minegishi, Dongcheol Oh, Hyunjae Lee, Toshinori Taishi, Jinsub Park, Mina Jung, Jiho Chang, Inho Im, Junseok Ha, Soonku Hong, Ichiro Yonenaga, Toyohiro Chikyow, and Takafumi YaoThis article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4×1016 cm-3, while ZnO:N shows n-type... (Read more)
- 3. Jpn. J. Appl. Phys. 49, 071302 (2010) , “Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper”, Minoru Nakamura and Susumu MurakamiWe have observed the formation of the Cu centers in p-type Si crystals diffused with dilute Cu between 400 and 1000 °C by deep-level transient spectroscopy (DLTS) and photoluminescence methods. For the samples diffused below 800 °C, a DLTS Cu center denoted as the CuDLB center was... (Read more)
- 4. Jpn. J. Appl. Phys. 49, 05FE02 (2010) , “Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers”, Kiyoteru Kobayashi and Taketoshi IdeThe current conduction in silicon carbon nitride (SiCN) dielectric films subjected to ultraviolet (UV) illumination at room temperature has been investigated. After exposure of SiCN single-layer and SiCN–SiO2 double-layer films to 4.9-eV UV illumination, leakage currents through... (Read more)
- 5. Jpn. J. Appl. Phys. 49, 051001 (2010) , “Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination center. The level is found to be responsible for the reverse bias current in the depletion region of n-type GaAsN schottky... (Read more)
- 6. Appl. Phys. Express 2, 091101 (2009) , “Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment”, Toru Hiyoshi and Tsunenobu KimotoBy thermal oxidation of 4H-SiC at 1150–1300 °C, the Z1/2 and EH6/7 concentrations can be reduced to below 1×1011 cm-3. By the oxidation, however, a high concentration of HK0 center (EV + 0.78 eV) is generated.... (Read more)
- 7. Appl. Phys. Express 2, 041101 (2009) , “Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation”, Toru Hiyoshi and Tsunenobu KimotoSignificant reduction of major deep levels in n-type 4H-SiC(0001) epilayers by means of thermal oxidation is demonstrated. By thermal oxidation of epilayers at 1150–1300 °C, the concentration of the Z1/2 and EH6/7 centers has been reduced from... (Read more)
- 8. Appl. Phys. Lett. 94, 092105 (2009) , “Interaction of oxygen with thermally induced vacancies in Czochralski silicon”, V. Akhmetov, G. Kissinger, and W. von AmmonComplexes consisting of a vacancy and four oxygen atoms, VO4, were found in oxygen-rich Czochralski silicon wafers subjected to rapid thermal annealing (RTA) at 1250 °C for 30 s in Ar/O2 atmosphere by means of Fourier transform infrared spectroscopy with enhanced... (Read more)
- 9. Appl. Phys. Lett. 94, 091903 (2009) , “Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys”, M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence spectroscopy was employed to study the impurity transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was observed in Mg-doped AlxGa1−xN alloys, which was identified to have the same origin as the... (Read more)
- 10. Appl. Phys. Lett. 94, 061910 (2009) , “Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy”, M. J. Wang, L. Yuan, C. C. Cheng, C. D. Beling, and K. J. ChenDefect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180... (Read more)
- 11. J. Appl. Phys. 105, 053709 (2009) , “Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, David D. Caudel, Pijush Bhattacharya, Arnold Burger, Krishna C. Mandal, D. Johnstone, and S. A. PayneDeep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Three... (Read more)
- 12. J. Appl. Phys. 105, 013504 (2009) , “Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices”, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Akio Takano, Kentarou Sawano, and Yasuhiro ShirakiWe investigated the contributions of neutral and charged silicon self-interstitials to self- and boron diffusion during transient enhanced diffusion in silicon. We simultaneously observed self- and boron diffusion in silicon using natSi/28Si isotope superlattices. A calculation... (Read more)
- 13. Jpn. J. Appl. Phys. 48, 081003 (2009) , “Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN”, Kuan-Ting Liu, Shoou-Jinn Chang, and Sean WuThe effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant... (Read more)
- 14. Jpn. J. Appl. Phys. 48, 031205 (2009) , “Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide”, Kazuhiro Mochizuki, Haruka Shimizu, and Natsuki YokoyamaReported profiles of high-temperature (500 °C)-implanted boron ions diffused in 4H-silicon carbide at 1200–1900 °C for 5–90 min were simulated through a “dual-sublattice” modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a... (Read more)
- 15. Phys. Rev. B 79, 075207 (2009) , “EPR study of local symmetry sites of Ce3+ in Pb1−xCexA (A=S, Se, and Te)”, X. Gratens, V. Bindilatti, V. A. Chitta, N. F. Oliveira, and Jr.The local site symmetry of Ce3+ ions in the diluted magnetic semiconductors Pb1−xCexA (A=S, Se, and Te) has been investigated by electron-paramagnetic resonance (EPR). The experiments were carried out on single crystals with cerium... (Read more)
- 16. Phys. Rev. B 79, 075203 (2009) , “Hyperfine interaction in the ground state of the negatively charged nitrogen vacancy center in diamond”, S. Felton, A. M. Edmonds, and M. E. NewtonThe 14N, 15N, and 13C hyperfine interactions in the ground state of the negatively charged nitrogen vacancy (NV−) center have been investigated using electron-paramagnetic-resonance spectroscopy. The previously published parameters for the... (Read more)
- 17. Phys. Rev. B 79, 075201 (2009) , “First-principles studies of small arsenic interstitial complexes in crystalline silicon”, Yonghyun Kim, Taras A. Kirichenko, Ning Kong, Graeme Henkelman, and Sanjay K. BanerjeeWe present a first-principles study of the structure and dynamics of small As-interstitial complexes (AsI2, As2I2, AsI3, and As2I3) in crystalline Si. These complexes can be important components of stable As-interstitial clusters or... (Read more)
- 18. Phys. Rev. B 79, 014102 (2009) , “Vacancy defect positron lifetimes in strontium titanate”, R. A. Mackie, S. Singh, J. Laverock, S. B. Dugdale, and D. J. KeebleThe results of positron-annihilation lifetime spectroscopy measurements on undoped, electron-irradiated, and Nb-doped SrTiO3 single crystals are reported. Perfect lattice and vacancy defect positron lifetimes were calculated using two different first-principles schemes. The Sr-vacancy... (Read more)
- 19. Phys. Rev. Lett. 102, 065502 (2009) , “Transition Metal Impurities on the Bond-Centered Site in Germanium”, S. Decoster, S. Cottenier, B. De Vries, H. Emmerich, U. Wahl, J. G. Correia, and A. VantommeWe report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the... (Read more)
- 20. Appl. Phys. Lett. 93, 152108 (2008) , “Internal gettering of iron in multicrystalline silicon at low temperature”, Rafael Krain, Sandra Herlufsen, and Jan SchmidtThe interstitial iron concentration in multicrystalline silicon wafers, determined from recombination lifetime measurements, is effectively reduced by annealing the wafers at very low temperature (300–500 °C). During annealing, the iron concentration decreases by more than one order of... (Read more)
- 21. Appl. Phys. Lett. 93, 141907 (2008) , “Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge”, S. Decoster, B. De Vries, U. Wahl, J. G. Correia, and A. VantommeWe report on an emission channeling study of the lattice site location of implanted Er in Ge together with its thermal stability. We found direct experimental evidence of Er atoms located on the tetrahedral (T) interstitial site and on the bond-centered (BC) site, with a maximum total occupancy... (Read more)
- 22. Appl. Phys. Lett. 93, 103505 (2008) , “Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance”, A. Stesmans, P. Somers, V. V. Afanas'ev, W. Tian, L. F. Edge, and D. G. SchlomElectron spin resonance study on heteroepitaxial Si/insulator structures obtained through the growth of epi-Lu2O3 films on (111)Si (~4.5 % mismatched) by reactive molecular beam epitaxy indicates the presence in the as-grown state of interfacial Pb... (Read more)
- 23. Appl. Phys. Lett. 93, 032108 (2008) , “High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC”, Giovanni Alfieri and Tsunenobu KimotoWe report on the thermal stability of deep levels detected after 1 MeV electron irradiated p-type 6H-SiC. The investigation was performed by deep level transient spectroscopy, and an isochronal annealing series was carried out in the 373–2073 K temperature range. We found seven... (Read more)
- 24. Appl. Phys. Lett. 92, 222109 (2008) , “Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction”, Q. L. Gu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa, Y. F. Hsu, A. B. Djurišić, C. Y. Zhu, S. Fung, and L. W. LuNitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and... (Read more)
- 25. Appl. Phys. Lett. 92, 142105 (2008) , “Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC”, J. Wong-Leung and B. G. SvenssonHigh-purity and low-doped n-type epitaxial layers of 4H-SiC have been implanted with N and C ions by using energies in the MeV range and doses from 2×108 to 1×109 cm−2. Postimplant annealing was performed at 1100 °C prior to... (Read more)
- 26. Appl. Phys. Lett. 92, 132104 (2008) , “Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory”, Y. J. Seo, K. C. Kim, and T. G. KimThe origin of the electron memory trap in an oxide-nitride-oxide structure deposited on n-type Si is investigated by both capacitance-voltage and deep level transient spectroscopy (DLTS). Two electron traps are observed near 0.27 and 0.54 eV, below the conduction band minimum of Si and are... (Read more)
- 27. Appl. Phys. Lett. 92, 132102 (2008) , “On the identity of a crucial defect contributing to leakage current in silicon particle detectors”, J. H. Bleka, L. Murin, E. V. Monakhov, B. S. Avset, and B. G. SvenssonThe annealing kinetics of the so-called E4/E5 center or E4a/E4b center in electron-irradiated Si particle detectors has been studied at four different temperatures from 23 to 65 °C using deep-level transient spectroscopy (DLTS). The center gives rise to two energy levels at 0.37 and 0.45 eV... (Read more)
- 28. J. Appl. Phys. 104, 093711 (2008) , “Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes”, G. Izzo, G. Litrico, L. Calcagno, G. Foti, and F. La ViaThe changes in the electrical properties of 4H-SiC epitaxial layer induced by irradiation with 7.0 MeV C+ ions were investigated by current-voltage measurements and deep level transient spectroscopy (DLTS). Current-voltage characteristics of the diodes fabricated from epilayers... (Read more)
- 29. J. Appl. Phys. 104, 093521 (2008) , “Native defects and oxygen and hydrogen-related defect complexes in CdTe: Density functional calculations”, Mao-Hua Du, Hiroyuki Takenaka, and David J. SinghWe study structural and electronic properties of various intrinsic and extrinsic defects in CdTe based on first-principles calculations. The focus is given to the role of these defects in the carrier compensation in semi-insulating CdTe, which is essential for the CdTe-based radiation detectors. The... (Read more)
- 30. J. Appl. Phys. 104, 083702 (2008) , “A bistable divacancylike defect in silicon damage cascades”, R. M. Fleming, C. H. Seager, D. V. Lang, E. Bielejec, and J. M. CampbellTwo deep level transient spectroscopy (DLTS) electron emission signatures, previously labeled E4 and E5, have been shown to be bistable with respect to minority carrier injection at room temperature. These result from two charge state transitions of the same defect. We have performed DLTS... (Read more)
- 31. J. Appl. Phys. 104, 054110 (2008) , “The effect of implanting boron on the optical absorption and electron paramagnetic resonance spectra of silica”, R. H. Magruder, III, A. Stesmans, R. A. Weeks,, and R. A. WellerSilica samples (type III, Corning 7940) were implanted with B using multiple energies to produce a layer ~600 nm thick in which the concentration of B ranged from 0.034 to 2.04 at. %. Optical absorption spectra were measured from 1.8 to 6.5 eV. Electron paramagnetic resonance (EPR) measurements... (Read more)
- 32. J. Appl. Phys. 104, 043702 (2008) , “Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation”, Hideharu Matsuura, Nobumasa Minohara, and Takeshi OhshimaThe hole concentration in Al-doped p-type 4H-SiC was found to be significantly reduced by electron irradiation when compared to the hole concentration in Al-doped p-type Si; this is an unexpected result. The temperature dependence of the hole concentration p(T) in... (Read more)
- 33. J. Appl. Phys. 104, 023705 (2008) , “Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium”, E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, and P. ClauwsDeep levels have been studied in n-type germanium subjected to Co, Fe, Cu, Cr, and Pt germanidation in the temperature range between 300 and 700 °C by deep-level transient spectroscopy (DLTS). It is shown that most DLTS peaks can be assigned to acceptor levels of substitutional metal... (Read more)
- 34. J. Appl. Phys. 103, 123709 (2008) , “Optical detection of magnetic resonance and electron paramagnetic resonance study of the oxygen vacancy and lead donors in ZnO”, R. Laiho, L. S. Vlasenko, and M. P. VlasenkoOptical detection of magnetic resonance (ODMR) and electron paramagnetic resonance (EPR) spectra are investigated in ZnO single crystals. The strong negative ODMR line with axial symmetry of the g-tensor around the c axis with g=2.0133±0.0001 and... (Read more)
- 35. J. Appl. Phys. 103, 104505 (2008) , “Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam”, A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo, and S. IshibashiA relationship between intra-4f transitions of Er and vacancy-type defects in Er-doped GaN was studied by using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured for Er-doped GaN grown by molecular beam epitaxy. A clear correlation between... (Read more)
- 36. J. Appl. Phys. 103, 094901 (2008) , “Investigation of the origin of deep levels in CdTe doped with Bi”, E. Saucedo, J. Franc, H. Elhadidy, P. Horodysky, C. M. Ruiz, V. Bermúdez, and N. V. SochinskiiCombining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of... (Read more)
- 37. J. Appl. Phys. 103, 093701 (2008) , “Characterization of plasma etching damage on p-type GaN using Schottky diodes”, M. Kato, K. Mikamo, M. Ichimura, M. Kanechika, O. Ishiguro, and T. KachiThe plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of... (Read more)
- 38. J. Appl. Phys. 103, 073716 (2008) , “Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures”, Jinggang Lu, Yongkook Park, and George A. RozgonyiThree SiGe/Si heterostructures with different Ge contents have been examined by deep level transient spectroscopy (DLTS) and capacitance-voltage techniques. DLTS revealed a broad band of traps from 80 to 250 K in the as-grown samples. Arrhenius plots of a 25% SiGe sample revealed three trap... (Read more)
- 39. J. Appl. Phys. 103, 044505 (2008) , “Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors”, J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. KrishnanWe utilize a combination of DC gate-controlled diode recombination current measurements as well as two very sensitive electrically detected magnetic resonance techniques, spin-dependent recombination and spin-dependent tunneling, to identify atomic-scale defects involved in the negative bias... (Read more)
- 40. J. Appl. Phys. 103, 043710 (2008) , “Further characterization of oxygen vacancies and zinc vacancies in electron-irradiated ZnO”, S. M. Evans, N. C. Giles, L. E. Halliburton, and L. A. KappersElectron paramagnetic resonance (EPR) has been used to monitor oxygen vacancies and zinc vacancies in a ZnO crystal irradiated near room temperature with 1.5 MeV electrons. Out-of-phase detection at 30 K greatly enhances the EPR signals from these vacancies. Following the electron irradiation, but... (Read more)
- 41. J. Appl. Phys. 103, 033701 (2008) , “Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC”, X. D. Chen, S. Dhar, T. Isaacs-Smith, J. R. Williams, L. C. Feldman, and P. M. MooneyPostoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at SiO2/4H-SiC interfaces. Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealed SiO2/4H-SiC interfaces were performed using... (Read more)
- 42. J. Appl. Phys. 103, 013710 (2008) , “Acceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, Ryan Dupere, and Arnold BurgerDeep-acceptor levels associated with indium in indium-doped GaSe crystals have been measured. High-quality Schottky diodes of GaSe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Four DLTS peaks at 127, 160, 248, and... (Read more)
- 43. Phys. Rev. B 78, 235204 (2008) , “Symmetry of the phosphorus donor in diamond from first principles”, Bozidar Butorac and Alison MainwoodPhosphorus is the only donor in diamond which can be used technologically. Several ab initio theoretical models have been published on substitutional phosphorus, and most of them have predicted that it should have tetrahedral or trigonal symmetry. Recent ab initio calculations... (Read more)
- 44. Phys. Rev. B 78, 235203 (2008) , “Electron paramagnetic resonance of sulfur at a split-vacancy site in diamond”, J. M. BakerIn natural diamonds a sulfur-related paramagnetic center labeled W31 has been previously tentatively assigned to an interstitial sulfur species in a positive charge state. However, we show by combining an assessment of available experimental data and density-functional simulations that the hyperfine... (Read more)
- 45. Phys. Rev. B 78, 233201 (2008) , “Gallium interstitial in irradiated germanium: Deep level transient spectroscopy”, Vl. Kolkovsky, M. Christian Petersen, A. Mesli, J. Van Gheluwe, P. Clauws, and A. Nylandsted LarsenTwo electronic levels at 0.34 eV above the valence band and 0.32 eV below the conduction band, in gallium doped, p-type Ge irradiated with 2 MeV electrons have been studied by deep level transient spectroscopy (DLTS) with both majority- and minority-carrier injections, and Laplace DLTS... (Read more)
- 46. Phys. Rev. B 78, 113202 (2008) , “Two FeH pairs in n-type Si and their implications: A theoretical study”, N. Gonzalez Szwacki, M. Sanati, and S. K. EstreicherExperimental evidence for interstitial {FeH} pairs in n-type Si stems from thermally stimulated capacitance (TSCAP). Electron-paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first... (Read more)
- 47. Phys. Rev. B 78, 085214 (2008) , “First-principles study of native defects in CdGeAs2”, Tula R. Paudel and Walter R. L. LambrechtFirst-principles results are presented for various native defects in CdGeAs2 as function of the relevant elements' chemical potentials. The defect formation energies were calculated using fully relaxed 64 atom supercells by means of the full-potential linearized muffin-tin orbital... (Read more)
- 48. Phys. Rev. B 78, 085205 (2008) , “Formation and origin of the dominating electron trap in irradiated p-type silicon”, Lasse Vines, E. V. Monakhov, A. Yu. Kuznetsov, R. Kozowski, P. Kaminski, and B. G. SvenssonDeep level transient spectroscopy and minority-carrier transient spectroscopy (MCTS) have been applied to study electron-irradiated and proton-irradiated p-type Si samples with boron concentrations in the range of 6×1013−2×1015 cm−3.... (Read more)
- 49. Phys. Rev. B 78, 085202 (2008) , “Evolution of vacancy-related defects upon annealing of ion-implanted germanium”, J. Slotte, M. Rummukainen, F. Tuomisto, V. P. Markevich, A. R. Peaker, C. Jeynes, and R. M. GwilliamPositron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×1012 cm−2 and 4×1014 ... (Read more)
- 50. Phys. Rev. B 78, 035125 (2008) , “Mechanisms of electrical isolation in O+-irradiated ZnO”, A. Zubiaga, F. Tuomisto, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, and M. YanoWe have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are... (Read more)
- 51. Phys. Rev. B 78, 033202 (2008) , “Divacancy clustering in neutron-irradiated and annealed n-type germanium”, K. Kuitunen, F. Tuomisto, J. Slotte, and I. CapanWe have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation, the Sb-doped samples [(Sb)=1.5×1015 cm−3] were annealed at 473, 673, and 773 K for 30 min. The positron lifetime was measured as a function of temperature... (Read more)
- 52. Phys. Rev. B 77, 155214 (2008) , “Optical absorption and electron paramagnetic resonance of the Ealpha[prime]" align="middle"> center in amorphous silicon dioxide”, G. Buscarino, R. Boscaino, S. Agnello, and F. M. GelardiWe report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the Ealpha[prime]" align="middle"> point defect in amorphous silicon dioxide (a-SiO2). This defect has been studied in β-ray irradiated and... (Read more)
- 53. Phys. Rev. B 77, 081201(R) (2008) , “Electron paramagnetic resonance studies of the neutral nitrogen vacancy in diamond”, S. Felton, A. M. Edmonds, M. E. Newton, P. M. Martineau, D. Fisher, and D. J. TwitchenDespite the numerous experimental and theoretical studies on the negatively charged nitrogen vacancy center (NV−) in diamond and the predictions that the neutral nitrogen vacancy center (NV0) should have an S= ground state, NV0 has not previously been... (Read more)
- 54. Phys. Rev. B 77, 073206 (2008) , “Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon”, J. H. Bleka, I. Pintilie, E. V. Monakhov, B. S. Avset, and B. G. SvenssonIn hydrogenated high-purity Si, the vacancy-oxygen (VO) center is shown to anneal already at temperatures below 200 °C and is replaced by a center, identified as a vacancy-oxygen-hydrogen complex, with an energy level 0.37 eV below the conduction-band edge and a rather low thermal... (Read more)
- 55. Phys. Rev. B 77, 045204 (2008) , “Vacancy clustering and acceptor activation in nitrogen-implanted ZnO”, Thomas Moe Børseth, Filip Tuomisto, Jens S. Christensen, Edouard V. Monakhov, Bengt G. Svensson, and Andrej Yu. KuznetsovThe role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220 keV N implantation using... (Read more)
- 56. Phys. Rev. B 77, 035201 (2008) , “Native defect properties and p-type doping efficiency in group-IIA doped wurtzite AlN”, Yong Zhang, Wen Liu and Hanben NiuUsing the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p-type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that... (Read more)
- 57. Phys. Rev. Lett. 101, 247604 (2008) , “Measurement of Cu(II) Copper Defect Dipoles in Ferroelectric PbTiO3 Using Electron-Nuclear Double Resonance”, R. R. Garipov, J.-M. Spaeth, and D. J. KeeblePoint defects associated with Cu(II) in ferroelectric PbTiO3 were determined using pulsed electron-nuclear double resonance (ENDOR). Three centers were observed, and neighbor 207Pb superhyperfine tensors to the third shell of equivalent Pb ions measured. The ENDOR angular... (Read more)
- 58. Phys. Rev. Lett. 101, 177204 (2008) , “Diffusion of Interstitial Mn in the Dilute Magnetic Semiconductor (Ga,Mn)As: The Effect of a Charge State”, V. I. Baykov, P. A. Korzhavyi, and B. JohanssonMigration barriers for diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As are studied using first-principles calculations. The diffusion pathway goes through two types of interstitial sites: As coordinated and Ga coordinated. The energy profile along the path is found to... (Read more)
- 59. Phys. Rev. Lett. 100, 026803 (2008) , “Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks”, A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, and H. WiggersWe have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of... (Read more)
- 60. Appl. Phys. Lett. 91, 202111 (2007) , “Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC”, N. T. Son, P. Carlsson, A. Gällström, B. Magnusson, and E. JanzénElectron paramagnetic resonance was used to study semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range of 5.5×1015–1.1×1017 cm−3. Our results show that the electrical activation of V is low and hence only in... (Read more)
- 61. Appl. Phys. Lett. 91, 152102 (2007) , “N–O related shallow donors in silicon: Stoichiometry investigations”, H. E. Wagner, H. Ch. Alt, W. von Ammon, F. Bittersberger, A. Huber, and L. KoesterFor clarification of the unknown chemical composition of the electrically active N–O defects in silicon, an ingot with variable oxygen content and fixed nitrogen concentration was investigated by infrared spectroscopy. Shallow donor spectra taken at different sample positions, i.e., oxygen... (Read more)
- 62. Appl. Phys. Lett. 91, 142101 (2007) , “Dangling-bond defects and hydrogen passivation in germanium”, J. R. Weber, A. Janotti, P. Rinke, and C. G. Van de WalleThe application of germanium in complementary metal-oxide semiconductor technology is hampered by high interface-state densities. Using first-principles calculations, we investigate the effects of dangling bonds (DBs) and their interaction with hydrogen. We find that Ge DBs give rise to electronic... (Read more)
- 63. Appl. Phys. Lett. 91, 132105 (2007) , “Shallow acceptors in GaN”, T. A. G. Eberlein, R. Jones, S. Öberg, and P. R. BriddonRecent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that CN is the most... (Read more)
- 64. Appl. Phys. Lett. 91, 104105 (2007) , “Identification of defects in Y3Al5O12 crystals by positron annihilation spectroscopy”, F. A. Selim, D. Solodovnikov, M. H. Weber, and K. G. LynnPositron annihilation, thermoluminescence, and optical absorption measurements were applied with the aid of several annealing and diffusion procedures to investigate the nature of point defects in Y3Al5O12 (YAG) single crystals. By annealing at 1500 °C in air or... (Read more)
- 65. Appl. Phys. Lett. 91, 092107 (2007) , “Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN”, O. Lopatiuk-Tirpak, L. Chernyak, Y. L. Wang, F. Ren, S. J. Pearton, and K. GartsmanThe electron irradiation-induced increase of minority carrier diffusion length was studied as a function of hole concentration in Mg-doped GaN. Variable-temperature electron beam induced current measurements yielded activation energies of 264, 254, 171, and 144 meV for samples with hole... (Read more)
- 66. Appl. Phys. Lett. 91, 043503 (2007) , “Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN”, Aurangzeb Khan, J. Gou, M. Imazumi, and M. YamaguchiThe authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron... (Read more)
- 67. Appl. Phys. Lett. 91, 022913 (2007) , “Defects in hydrothermally grown bulk ZnO”, H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. DurbinHydrothermally grown bulk ZnO (Tokyo Denpa) was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20 eV, ideality factor of 1.04). Two main shallow defects, T1 and T2, with thermal activation energies of 13 and 52 meV, respectively, were... (Read more)
- 68. Appl. Phys. Lett. 90, 152108 (2007) , “Correlation between carrier recombination and p-type doping in P monodoped and In–P codoped ZnO epilayers”, J. D. Ye, S. L. Gu, F. Li, S. M. Zhu, R. Zhang, Y. Shi, Y. D. Zheng, X. W. Sun, G. Q. Lo, and D. L. KwongThe carrier recombination processes in p-type ZnO epilayers with P monodoping and In–P codoping have been studied by temperature-dependent photoluminescence spectroscopy. Good correlations were observed between carrier recombination and acceptor and donor energy levels. The exciton... (Read more)
- 69. Appl. Phys. Lett. 90, 152103 (2007) , “Ab initio studies of arsenic and boron related defects in silicon mesa diodes”, C. Janke, R. Jones, S. Öberg, and P. R. BriddonE centers are known to diffuse around 400 K in Si and may then form larger donor-vacancy defects such as As2V in heavily doped n-type Si doped with As or AsBV if they diffuse into p-type regions. Ab initio methods are used to explore these possibilities. The... (Read more)
- 70. Appl. Phys. Lett. 90, 142116 (2007) , “Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance”, K. Clémer, A. Stesmans, and V. V. Afanas'evElectron spin resonance analysis has detected a P-donor related point defect in nanometer-thick HfO2 films on (100)Si after annealing in the range of 500–900 °C. Based on the principal g matrix (axial; g=1.9965; g=1.9975) and hyperfine... (Read more)
- 71. Appl. Phys. Lett. 90, 123501 (2007) , “Deep level defects which limit current gain in 4H SiC bipolar junction transistors”, C. J. Cochrane, P. M. Lenahan, and A. J. LelisThe authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed... (Read more)
- 72. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more)
- 73. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more).inp files: PbTe | last update: Sergey V. Ovsyannikov
- 74. Appl. Phys. Lett. 90, 122101 (2007) , “Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact”, Q. L. Gu, C. C. Ling, X. D. Chen, C. K. Cheng, A. M. C. Ng, C. D. Beling, S. Fung, A. B. Djurišić, L. W. Lu, G. Brauer, and H. C. OngConversion of the Au/n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy.... (Read more)
- 75. Appl. Phys. Lett. 90, 112110 (2007) , “Alpha-particle irradiation-induced defects in n-type germanium”, Vl. Kolkovsky, M. Christian Petersen, and A. Nylandsted LarsenDeep level transient spectroscopy and high-resolution Laplace deep level transient spectroscopy were used to investigate alpha-particle irradiation-induced defects in n-type Ge. It is proposed that there is no electrically active divacancy level in the upper half of the band gap. A dominant... (Read more)
- 76. Appl. Phys. Lett. 90, 072905 (2007) , “Imaging deep trap distributions by low vacuum scanning electron microscopy”, Milos Toth, W. Ralph Knowles, and Matthew R. PhillipsThe distribution of deep traps in a bulk dielectric (Al2O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of... (Read more)
- 77. Appl. Phys. Lett. 90, 072107 (2007) , “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN”, J. Mimila-Arroyo, M. Barbé, F. Jomard, J. Chevallier, M. A. di Forte-Poisson, S. L. Delage, and C. Dua.Deuterium diffusion was achieved in nonintentionally doped n-GaN layers, grown by metal organic chemical vapor deposition, at 460 °C and a power density of 1.0 W cm−2. A deuterium diffusion mechanism was observed yielding concentrations around 1018 ... (Read more)
- 78. Appl. Phys. Lett. 90, 063103 (2007) , “Origin of the red luminescence band in photoluminescence spectra of ZnSe nanowires”, U. Philipose, S. Yang, T. Xu, and Harry E. RudaIn this work, the origin of the deep level, defect related photoluminescence emission band in ZnSe is investigated. Using the dependence of the peak energy on excitation intensity, it was shown to originate from donor-acceptor pair recombination. The binding energy of the donor-acceptor pair was... (Read more)
- 79. Appl. Phys. Lett. 90, 062116 (2007) , “Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation”, Liutauras Storasta and Hidekazu TsuchidaThe authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 °C or higher temperature. Reduction of... (Read more)
- 80. Appl. Phys. Lett. 90, 041910 (2007) , “Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing”, J. Tan, G. Davies, S. Hayama, and A. Nylandsted LarsenThe authors have investigated the effect of Ge concentration on the evolution of W optical center (W center) in Si-implanted epitaxial Si1−xGex at low temperature annealing. From the results of photoluminescence, the annealing behavior of... (Read more)
- 81. Appl. Phys. Lett. 90, 032906 (2007) , “Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems”, Ling Dai, V. B. C. Tan, Shuo-Wang Yang, Ping Wu, and Xian-Tong ChenIn ultralow-k dielectric systems, the porous dielectrics are normally sealed by a SiC film before the deposition of a Ta diffusion barrier layer. However, the Ta barrier effects are negated when the SiC films are fabricated by plasma-enhanced chemical vapor deposition (PECVD). Through large... (Read more)
- 82. Appl. Phys. Lett. 90, 032102 (2007) , “Dynamic nuclear polarization induced by hot electrons”, Yosuke Komori and Tohru OkamotoA method for local dynamic nuclear polarization is demonstrated in a GaAs/AlGaAs heterostructure at the Landau level filling factor ν=3. Using a narrow channel sample, where the width varies stepwise along the electron flow, the authors find that electron cooling (heating) causes the polarization... (Read more)
- 83. Appl. Phys. Lett. 90, 012107 (2007) , “Unambiguous identification of the PL-I9 line in zinc oxide”, S. Müller, D. Stichtenoth, M. Uhrmacher, H. Hofsäss, C. Ronning, and J. RöderRadioactive 111In atoms implanted into zinc oxide (ZnO) single crystals occupy substitutional Zn lattice sites after annealing to 700 °C. The respective photoluminescence (PL) spectra of the samples were monitored while the donor In decayed into stable and isolectronic Cd. The... (Read more)
- 84. Appl. Phys. Lett. 90, 011905 (2007) , “Dislocation junctions as barriers to threading dislocation migration”, Siu Sin Quek, Zhaoxuan Wu, Yong-Wei Zhang, Yang Xiang, and David J. SrolovitzLevel set simulations of dislocation dynamics in biaxially strained, heteroepitaxial films reveal interesting kinetic and thermodynamic mechanisms for blocking the migration of threading dislocations. Two dislocations on the same or on intersecting slip planes may react to form a threading... (Read more)
- 85. J. Appl. Phys. 102, 113702 (2007) , “Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy”, S. A. Reshanov and G. PenslThe effect of the Schottky barrier height on the detection of the concentration of midgap defects using deep level transient spectroscopy (DLTS) is experimentally and theoretically studied for EH6 and EH7 defects in 4H-SiC. In this special case, the DLTS signal height... (Read more)
- 86. J. Appl. Phys. 102, 093711 (2007) , “Deep level thermal evolution in Fe implanted InP”, Tiziana Cesca and Andrea GasparottoWe report on the thermal evolution of the deep levels in Fe implanted and annealed InP. The position and nature of the dominant traps have been assessed by current-voltage-temperature measurements analyzed in the framework of the space-charge-limited current model. For low temperature annealing the... (Read more)
- 87. J. Appl. Phys. 102, 093504 (2007) , “Recombination centers in as-grown and electron-irradiated ZnO substrates”, N. T. Son and I. G. IvanovOptical detection of magnetic resonance (ODMR) was used to study defects in ZnO substrates irradiated with 3 MeV electrons at room temperature. The Zn vacancy and some other ODMR centers were detected. Among these, the Zn vacancy and two other centers, labeled as LU3 and LU4, were also commonly... (Read more)
- 88. J. Appl. Phys. 102, 086107 (2007) , “Photoluminescence in phosphorous-implanted ZnO films”, Veeramuthu Vaithianathan, Shunichi Hishita, Jae Young Park, and Sang Sub KimZnO thin films prepared by pulsed laser deposition were implanted with phosphorous (P) using dose levels of 1012–1014 ions/cm2 at room temperature. The P-implanted films were subsequently annealed between 500 and 700 °C in oxygen ambient. The Hall effect... (Read more)
- 89. J. Appl. Phys. 102, 084505 (2007) , “Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams”, A. Uedono, K. Ito, H. Nakamori, K. Mori, Y. Nakano, T. Kachi, S. Ishibashi, T. Ohdaira, and R. SuzukiDefects in ion-implanted GaN and their annealing properties were studied by using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and the positron lifetimes were measured for Si+, O+, and Be+-implanted GaN grown by the... (Read more)
- 90. J. Appl. Phys. 102, 073521 (2007) , “Effect of point defects on copper-related deep levels in p-type Czochralski silicon”, Weiyan Wang, Deren Yang, Xuegong Yu, Xiangyang Ma, and Duanlin QueThe effect of point defects on the copper (Cu)-related deep levels in p-type Czochralski (Cz) silicon has been investigated. It was found that generally five deep levels Ev+0.14 eV, Ev+0.17 eV, Ev+0.32 eV,... (Read more)
- 91. J. Appl. Phys. 102, 063713 (2007) , “Peculiarities of neutron-transmutation phosphorous doping of 30Si enriched SiC crystals: Electron paramagnetic resonance study”, P. G. Baranov, B. Ya. Ber, I. V. Ilyin, A. N. Ionov, E. N. Mokhov, M. V. Muzafarova, M. A. Kaliteevskii, P. S. Kop'ev, A. K. Kaliteevskii, O. N. Godisov, and I. M. LazebnikWe have obtained a high concentration of P donor dopants in 6H-SiC enriched with 30Si and irradiated with thermal neutrons. It was established that annealing at a relatively low temperature of 1300 °C, i.e., 500–600 °C lower than that used for annealing SiC with the... (Read more)
- 92. J. Appl. Phys. 102, 024908 (2007) , “Nitrogen acceptors in bulk ZnO (000) substrates and homoepitaxial ZnO films”, B. T. Adekore, J. M. Pierce, R. F. Davis, D. W. Barlage, and J. F. MuthBulk single crystals of unintentionally doped ZnO having charge carrier concentration, ND−NA values of ~1017 cm−3 were implanted with N+ ions at dosages of 1015 and 1016 ... (Read more)
- 93. J. Appl. Phys. 102, 023522 (2007) , “Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation”, Q. T. Zhao, U. Breuer, St. Lenk, and S. MantlDiffusion of sulfur (S) in S+ ion implanted Si(100) was investigated after rapid thermal annealing as well as after nickel silicidation. At lower S doses, S segregates to the Si(100) surface when the defects created by the S implantation are reduced during annealing. If the S dose... (Read more)
- 94. J. Appl. Phys. 101, 124902 (2007) , “Origin of green luminescence of ZnO powders reacted with carbon black”, Yi Hu and H.-J. ChenZnO powders were synthesized by a precipitation method and annealed with carbon black. Electron paramagnetic resonance (EPR) and photoluminescence spectroscopies were conducted to study the characteristics of the ZnO powders. The g factor of the EPR signal shifted to lower value for the... (Read more)
- 95. J. Appl. Phys. 101, 113537 (2007) , “Reactions of interstitial carbon with impurities in silicon particle detectors”, L. F. Makarenko, M. Moll, F. P. Korshunov, and S. B. LastovskiWe present deep level transient spectroscopy (DLTS) data measured on very high resistivity n-type float-zone silicon detectors after irradiation with 6 MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to... (Read more)
- 96. J. Appl. Phys. 101, 113526 (2007) , “Thermal evolution of boron irradiation induced defects in predoped Si revealed by positron annihilation experiments”, P. M. G. Nambissan, P. V. Bhagwat, and M. B. KurupThe isochronal annealing behavior of high energy (25–72 MeV) boron ion irradiation induced defects in boron-doped silicon is monitored through measurements of positron lifetimes and three distinct defect-evolution stages are identified. The initial boron doping created a defect environment... (Read more)
- 97. J. Appl. Phys. 101, 103716 (2007) , “Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC”, Giovanni Alfieri and Tsunenobu Kimotop-type 4H-SiC epitaxial layers grown by chemical vapor deposition have been implanted with 200 and 100 keV protons at five different implantation temperatures. An isochronal annealing series was performed from 100 to 1800 °C, and Al-doped epitaxial layers have been... (Read more)
- 98. J. Appl. Phys. 101, 103704 (2007) , “Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers”, Katsunori Danno and Tsunenobu KimotoThe authors have investigated deep levels in as-grown and electron-irradiated p-type 4H-SiC epilayers by deep level transient spectroscopy. In as-grown epilayers, the D center and four deep levels are observed. In p-type 4H-SiC, reactive ion etching followed by thermal treatment (at... (Read more)
- 99. J. Appl. Phys. 101, 093706 (2007) , “Persistent photoinduced changes in charge states of transition-metal donors in hydrothermally grown ZnO crystals”, Yongquan Jiang, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to monitor photoinduced changes in the charge states of deep transition-metal donors (Mn, Fe, Co, and Ni), shallow donors (Al and Ga), and lithium acceptors in a hydrothermally grown ZnO crystal. All of these impurities except the lithium were... (Read more)
- 100. J. Appl. Phys. 101, 086106 (2007) , “Electron irradiation induced deep centers in hydrothermally grown ZnO”, Z.-Q. Fang, B. Claflin, D. C. Look, and G. C. FarlowAn n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ~108 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation... (Read more)
- 101. J. Appl. Phys. 101, 083529 (2007) , “Low temperature diffusion of impurities in hydrogen implanted silicon”, S. Personnic, K. K. Bourdelle, F. Letertre, A. Tauzin, F. Laugier, R. Fortunier, and H. KlockerThe effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen, carbon, and fluorine during low temperature, 450 °C, isothermal anneals. Their fast migration... (Read more)
- 102. J. Appl. Phys. 101, 073706 (2007) , “Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy”, M. Asghar, I. Hussain, H. S. Noor, F. Iqbal, Q. Wahab, and A. S. BhattiCharacterization of dominant electron trap in as-grown SiC epilayers has been carried out using deep level transient spectroscopy. Two electron traps E1 and Z1 at Ec−0.21 and Ec−0.61 are observed, respectively;... (Read more)
- 103. J. Appl. Phys. 101, 054511 (2007) , “Annealing of 60Co gamma radiation-induced damage in n-GaN Schottky barrier diodes”, G. A. Umana-Membreno, J. M. Dell, G. Parish, B. D. Nener, L. Faraone, S. Keller, and U. K. MishraThe effect of isochronal thermal annealing on Ni/n-GaN Schottky barrier diodes exposed to a total accumulated gamma-ray dose of 21 Mrad(Si) has been investigated using capacitance-voltage (C-V) and current-voltage (I-V) measurements, while capacitance deep-level... (Read more)
- 104. J. Appl. Phys. 101, 053716 (2007) , “Compensation mechanism in high purity semi-insulating 4H-SiC”, W. C. Mitchel, William D. Mitchell, H. E. Smith, G. Landis, S. R. Smith, and E. R. GlaserA study of deep levels in high purity semi-insulating 4H-SiC has been made using temperature dependent Hall effect (TDH), thermal and optical admittance spectroscopies, and secondary ion mass spectrometry (SIMS). Thermal activation energies from TDH varied from a low of 0.55 eV to a high of... (Read more)
- 105. J. Appl. Phys. 101, 053709 (2007) , “Impacts of growth parameters on deep levels in n-type 4H-SiC”, Katsunori Danno, Tsutomu Hori, and Tsunenobu KimotoDeep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy. The Z1/2 and EH6/7 centers are dominant in epilayers grown with low C/Si ratios during chemical vapor deposition. By increasing the C/Si ratio, the... (Read more)
- 106. J. Appl. Phys. 101, 046107 (2007) , “Dopant dependence on passivation and reactivation of carrier after hydrogenation”, N. Fukata, S. Sato, H. Morihiro, K. Murakami, K. Ishioka, M. Kitajima, and S. HishitaThe formation of hydrogen (H)-related complexes and H effects on boron (B) and phosphorus (P) dopants was investigated in B- or P-doped silicon (Si) crystal treated with high concentration of H. The reactivation process of dopant carriers by annealing after hydrogenation was significantly different... (Read more)
- 107. Jpn. J. Appl. Phys. 46, L57 (2007) , “Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching”, Hisashi Shima, Fumiyoshi Takano, Yukio Tamai, Hiro Akinaga, and Isao H. Inoue.The resistance switching in Pt/Co–O/Pt trilayers has been successfully demonstrated. The trilayers were prepared by radio-frequency magnetron sputtering. The partial pressure of oxygen during sputtering and the post thermal process for the trilayer are crucial to realize the reproducible resistance switching. By adjusting oxygen partial pressure as well as post-annealing temperature and time, large resistance switching was steadily obtainable in both the as deposited and post-annealed Pt/Co–O/Pt trilayers. The resistance switching ratio exceeds 103, being sufficiently large for the resistance random access memory (RRAM). Co–O is regarded as a very promising oxide for RRAM having compatibilities with the conventional complementary metal–oxide semiconductor process. (Read more)
- 108. Phys. Rev. B 76, 233204 (2007) , “Room-temperature annealing of vacancy-type defect in high-purity n-type Si”, J. H. Bleka, E. V. Monakhov, B. G. Svensson, and B. S. AvsetElectron-irradiated p+-n−-n+ diodes produced from low-doped high-purity Si wafers were found, by deep-level transient spectroscopy (DLTS), to have a prominent defect, labeled E4, with an energy level 0.37 eV below the... (Read more)
- 109. Phys. Rev. B 76, 233202 (2007) , “Evidence of a second acceptor state of the E center in Si1−xGex”, K. Kuitunen, F. Tuomisto, and J. SlotteWe have found evidence of a second acceptor state of the E center in Si1−xGex by using positron annihilation spectroscopy. To achieve this, we studied proton irradiated n-type Si1−xGex with a Ge content... (Read more)
- 110. Phys. Rev. B 76, 214114 (2007) , “Biradical states of oxygen-vacancy defects in α-quartz”, R. I. Mashkovtsev, D. F. Howarth, and J. A. WeilSeveral radiation defects with effective electron spin S=1 have been observed in synthetic α-quartz, using room-temperature (RT) electron paramagnetic resonance (EPR) spectroscopy. It turns out that these defects had better be considered as biradicals, i.e., pairs of S=1/2... (Read more)
- 111. Phys. Rev. B 76, 195203 (2007) , “Zn interstitial related donors in ammonia-treated ZnO powders”, J. Sann, J. Stehr, A. Hofstaetter, D. M. Hofmann, A. Neumann, M. Lerch, U. Haboeck, A. Hoffmann, and C. ThomsenZnO powder heat treated in NH3 atmosphere was investigated by electron paramagnetic resonance, photoluminescence, and Raman spectroscopy. We find that the treatment creates Zn interstitials (Zni) and complexes of Zn interstitials and nitrogen atoms substituting oxygen... (Read more)
- 112. Phys. Rev. B 76, 165209 (2007) , “Theoretical study of small silicon clusters in 4H-SiC”, T. Hornos, N. T. Son, E. Janzén, and A. GaliWe have studied the small clusters of silicon and carbon interstitials by ab initio supercell calculations in 4H-SiC. We found that silicon interstitials can form stable and electrically active complexes with each other or with a carbon interstitial. Local vibration modes and... (Read more)
- 113. Phys. Rev. B 76, 165207 (2007) , “Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN”, F. Tuomisto, V. Ranki, D. C. Look, and G. C. FarlowWe have used positron annihilation spectroscopy to study the introduction and recovery of point defects introduced by 0.45 and 2 MeV electron irradiation at room temperature in n-type GaN. Isochronal annealings were performed up to 1220 K. We observe vacancy defects with specific lifetime... (Read more)
- 114. Phys. Rev. B 76, 165202 (2007) , “Native point defects in ZnO”, Anderson Janotti and Chris G. Van de WalleWe have performed a comprehensive first-principles investigation of native point defects in ZnO based on density functional theory within the local density approximation (LDA) as well as the LDA+U approach for overcoming the band-gap problem. Oxygen deficiency, manifested in the form of... (Read more)
- 115. Phys. Rev. B 76, 155203 (2007) , “Ab initio study of lithium and sodium in diamond”, E. B. Lombardi, Alison Mainwood, and K. OsuchInterstitial lithium and sodium have been suggested as alternatives to phosphorus to achieve shallow n-type doping of diamond. Experimental results have, however, been contradictory. We report ab initio density functional theory modeling of lithium and sodium in diamond and show that... (Read more)
- 116. Phys. Rev. B 76, 125205 (2007) , “Formation of electron traps in amorphous silica”, Matteo Farnesi Camellone, Joachim C. Reiner, Urs Sennhauser, and Louis SchlapbachThe capture of an electron by a silicon atom in a defect-free bulk of amorphous silica (a-SiO2) has been investigated. Ab initio constrained dynamics has been applied to evaluate the energy barrier. The computed energy barrier involved in the mechanism was found to be 0.23 ... (Read more)
- 117. Phys. Rev. B 76, 125204 (2007) , “Interstitial Fe in Si and its interactions with hydrogen and shallow dopants”, M. Sanati, N. Gonzalez Szwacki, and S. K. EstreicherThe properties of interstitial iron in crystalline silicon and its interactions with hydrogen, shallow acceptors (B, Al, Ga, In, and Tl), and shallow donors (P and As) are calculated from first-principles in periodic supercells. The interactions between the {Fe,B} pair and interstitial hydrogen are... (Read more)
- 118. Phys. Rev. B 76, 075204 (2007) , “Density functional simulations of silicon-containing point defects in diamond”, J. P. Goss, P. R. Briddon, and M. J. ShawSilicon impurities in diamond lead to the appearance of the well known system of 12 lines around 1.681 eV, thought to arise from the silicon-vacancy complex. This system is produced by various treatments suggestive of other silicon-related centers in the material. In order to elucidate possible... (Read more)
- 119. Phys. Rev. B 76, 045203 (2007) , “Metastable Frenkel pairs and the W11–W14 electron paramagnetic resonance centers in diamond”, J. P. Goss, M. J. Rayson, P. R. Briddon, and J. M. BakerDiamond is a material that shows great promise for particle detection applications. However, under irradiation with energetic particles, many thermally stable defects are created, made up of lattice vacancies, self-interstitials, and complexes with impurities. Relatively distant Frenkel... (Read more)
- 120. Phys. Rev. B 75, 245206 (2007) , “Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation”, Z. Q. Chen, S. J. Wang, M. Maekawa, A. Kawasuso, H. Naramoto, X. L. Yuan, and T. SekiguchiVacancy-type defects in as-grown ZnO single crystals have been identified using positron annihilation spectroscopy. The grown-in defects are supposed to be zinc vacancy (VZn)-related defects, and can be easily removed by annealing above 600 °C. VZn-related... (Read more)
- 121. Phys. Rev. B 75, 155204 (2007) , “Defects and carrier compensation in semi-insulating 4H-SiC substrates”, N. T. Son, P. Carlsson, J. ul Hassan, B. Magnusson,, and E. JanzénElectron paramagnetic resonance (EPR) studies revealed that vacancies (VC and VSi), carbon vacancy-antisite pairs (VCCSi) and the divacancy (VCVSi) are common defects in high-purity... (Read more)
- 122. Phys. Rev. B 75, 155202 (2007) , “Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon”, M. Mikelsen, J. H. Bleka, J. S. Christensen, E. V. Monakhov, B. G. Svensson, J. Härkönen, and B. S. AvsetAfter low dose electron irradiation, annealing kinetics of divacancy-oxygen (V2O) and vacancy-oxygen (VO) complexes in carbon-lean n-type magnetic Czochralski (MCZ) and diffusion-oxygenated float-zone (DOFZ) Si samples has been studied in detail. The samples were of n type... (Read more)
- 123. Phys. Rev. B 75, 035210 (2007) , “Self- and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations”, H. BrachtDopant diffusion experiments in semiconductors yield the mobility of the element of interest and information about the possible mechanisms of atomic diffusion. In many cases the diffusion is described on the basis of Fick's law of diffusion, but this treatment is often too simple. In this paper,... (Read more)
- 124. Phys. Rev. Lett. 99, 175502 (2007) , “Self-Interstitial in Germanium”, A. Carvalho, R. Jones, C. Janke, J. P. Goss, P. R. Briddon, J. Coutinho, and S. ÖbergLow-temperature radiation damage in n- and p-type Ge is strikingly different, reflecting the charge-dependent properties of vacancies and self-interstitials. We find, using density functional theory, that in Ge the interstitial is bistable, preferring a split configuration when neutral... (Read more)
- 125. Phys. Rev. Lett. 99, 136801 (2007) , “Electron Trapping at Point Defects on Hydroxylated Silica Surfaces”, Livia Giordano, Peter V. Sushko, Gianfranco Pacchioni, and Alexander L. ShlugerThe origin of electron trapping and negative charging of hydroxylated silica surfaces is predicted based on accurate quantum-mechanical calculations. The calculated electron affinities of the two dominant neutral paramagnetic defects, the nonbridging oxygen center, Si-O•, and the... (Read more)
- 126. Phys. Rev. Lett. 99, 085502 (2007) , “Nature of Native Defects in ZnO”, F. A. Selim, M. H. Weber, D. Solodovnikov, and K. G. LynnThis study revealed the nature of native defects and their roles in ZnO through positron annihilation and optical transmission measurements. It showed oxygen vacancies are the origin for the shift in the optical absorption band that causes the red or orange coloration. It also revealed experimental... (Read more)
- 127. phys. stat. sol. (b) 244, 437 (2007) , Wiley InterScience , “Thermoelectric properties and phase transitions of II-VI semiconductors at ultrahigh pressure”, V.V. Shchennikov, S.V. OvsyannikovThe high-pressure phase transitions in II-VI semiconductors (HgTe, HgSe, HgS, HgO, CdTe, CdSe, CdS, ZnTe, ZnSe, ZnS, ZnO) are analyzed in light of recent findings. A contribution is emphasized of the thermoelectric power (Seebeck effect) technique to registration of new electronic phases and to... (Read more)
- 128. phys. stat. sol. (b) 244, 279 (2007) , Wiley InterScience , “High-pressure X-ray diffraction study of ternary and non-stoichiometric PbTe and PbSe crystals”, S.V. Ovsyannikov, V.V. Shchennikov, A.Y. Manakov, A.Y. Likhacheva, I.F. Berger, A.I. Ancharov, M.A. SheromovThe paper reports the pressure-induced phase transitions observed in ternary PbTe and PbSe compounds (Pb1-x Snx Te, Pb1-x Mnx Te, Pb1-x Snx Se) and non-stoichiometric PbTe ones... (Read more)
- 129. Appl. Phys. Lett. 89, 242113 (2006) , “Thermally stimulated current studies on deep levels in hydrothermally grown single crystal ZnO bulk”, K. Kuriyama, M. Ooi, K. Matsumoto, and K. KushidaThe evaluation of the deep levels in hydrothermally grown ZnO single crystal bulk is studied using a thermally stimulated current (TSC) method with excitation above (below) the band gap. Two broad TSC spectra are resolved by four traps, P1 (165 meV), P2 (255 ... (Read more)
- 130. Appl. Phys. Lett. 89, 152103 (2006) , “Inherent density of point defects in thermal tensile strained (100)Si/SiO2 entities probed by electron spin resonance”, A. Stesmans, P. Somers, V. V. Afanas'ev, C. Claeys, and E. SimoenAn electron spin resonance analysis has been carried out of the intrinsic point defects in (100)Si/SiO2 entities thermally grown at 800 °C on biaxial tensile strained Si (s-Si). As compared to coprocessed standard (100)Si/SiO2, a significant reduction (>50%) is... (Read more)
- 131. Appl. Phys. Lett. 89, 151923 (2006) , “Variable core model and the Peierls stress for the mixed (screw-edge) dislocation”, Vlado A. Lubarda and Xanthippi MarkenscoffA variable core model of a moving crystal dislocation is proposed and used to derive an expression for the Peierls stress. The dislocation width varies periodically as a dislocation moves through the lattice, which leads to an expression for the Peierls stress in terms of the difference of the total... (Read more)
- 132. Appl. Phys. Lett. 89, 112107 (2006) , “Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy”, Juan A. Jiménez Tejada, Pablo Lara Bullejos, Juan A. López Villanueva, Francisco M. Gómez-Campos, Salvador Rodríguez-Bolívar, and M. Jamal DeenRecombination centers in thin asymmetrical p-n junctions were analyzed in the context of capacitance transient experiments. The combined effect of the thin low-doped region of the junction and the nonzero value of the occupation factor of the recombination center in the depletion layer... (Read more)
- 133. Appl. Phys. Lett. 88, 261906 (2006) , “Relationship between binding site and pressure dependence for defect-hydrogen complexes in ZnO”, M. G. Wardle, J. P. Goss, and P. R. BriddonThe effect of hydrostatic pressure on local vibrational modes of hydrogen defects in ZnO has been studied by first-principles methods. We find that the sign and magnitude of the frequency shift rate are strongly dependent on the local environment. In the case of isolated hydrogen, the bond centered... (Read more)
- 134. Appl. Phys. Lett. 88, 242112 (2006) , “High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer”, Q. Wang and Manmohan DaggubatiHigh temperature nitrogen annealing induced interstitial oxygen (Oi) precipitation has been investigated in silicon epitaxial layers (epilayers) grown on heavily arsenic-doped Czochralski silicon wafers. Both transmission electron microscopy and secondary ion mass spectrometry data... (Read more)
- 135. Appl. Phys. Lett. 88, 101918 (2006) , “Alternating layers of vacancy-type and interstitial-type defects in Ge ion implanted silicon”, R. KöglerThe defect structure of Ge-implanted and annealed silicon was investigated. A stacked structure of alternating layers of vacancy-type defects (cavities) and interstitial-type defects (dislocation loops) was detected. These defects form a substructure within the basic dual structure consisting of a... (Read more)
- 136. Appl. Phys. Lett. 88, 101904 (2006) , “Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy”, D. Dagnelund, I. A. Buyanova, T. Mchedlidze, and W. M. ChenRadiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy is significantly improved by reduced nitrogen ion bombardment during the growth. Based on the results of temperature-dependent photoluminescence (PL) and optically detected magnetic resonance... (Read more)
- 137. Appl. Phys. Lett. 88, 062112 (2006) , “Electron paramagnetic resonance of a donor in aluminum nitride crystals”, S. M. Evans, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectra are obtained from a donor in aluminum nitride (AlN) crystals. Although observed in as-grown crystals, exposure to x rays significantly increases the concentration of this center. ENDOR identifies a strong... (Read more)
- 138. Appl. Phys. Lett. 88, 023113 (2006) , “Implantation of labelled single nitrogen vacancy centers in diamond using 15N”, J. R. Rabeau and P. ReichartNitrogen-vacancy (NV) color centers in diamond were created by implantation of 7 keV 15N(I=1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV centers. The hyperfine... (Read more)
- 139. J. Appl. Phys. 100, 113531 (2006) , “Impact of silicon incorporation on the formation of structural defects in AlN”, M. Hermann, F. Furtmayr, F. M. Morales, O. Ambacher, M. Stutzmann, and M. EickhoffThe impact of Si impurities on the structural properties of AlN, grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire is studied. Under nitrogen-rich growth conditions silicon can be homogeneously incorporated up to Si concentrations of [Si]=5.2×1021... (Read more)
- 140. J. Appl. Phys. 100, 034309 (2006) , “Critical size for defects in nanostructured materials”, Jagdish NarayanThis paper addresses some of the fundamental issues and critical advantages in reducing the grain size/feature size to the nanoscale regime. We find that as the grain size or feature size is reduced, there is a critical size below which the defect content can be reduced virtually to zero. This... (Read more)
- 141. J. Appl. Phys. 100, 023512 (2006) , “Stacking faults and twin boundaries in fcc crystals determined by x-ray diffraction profile analysis”, Levente Balogh, Gábor Ribárik, and Tamás UngárA systematic procedure is developed to evaluate the density of planar defects together with dislocations and crystallite or subgrain size by x-ray line profile analysis in fcc crystals. Powder diffraction patterns are numerically calculated by using the DIFFAX software for intrinsic and extrinsic... (Read more)
- 142. J. Appl. Phys. 99, 093509 (2006) , “Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing”, A. Bentzen, A. Holt, R. Kopecek, G. Stokkan, J. S. Christensen, and B. G. SvenssonWe have investigated the gettering of transition metals in multicrystalline silicon wafers during a phosphorus emitter diffusion for solar cell processing. The results show that mainly regions of high initial recombination lifetime exhibit a significant lifetime enhancement upon phosphorus diffusion... (Read more)
- 143. J. Appl. Phys. 99, 064502 (2006) , “High concentration in-diffusion of phosphorus in Si from a spray-on source”, A. Bentzen, A. Holt, J. S. Christensen, and B. G. SvenssonHigh concentration in-diffusion of phosphorus in both Czochralski grown and solar grade multicrystalline Si from a spray-on liquid source has been studied by secondary ion mass spectrometry and electrochemical capacitance-voltage profiling. By extraction of the concentration dependent effective... (Read more)
- 144. J. Phys.: Condens. Matter 18, L551 (2006) , IOP Publishing , “Observation of a new high-pressure semimetal phase of GaAs from pressure dependence of the thermopower”, S.V. Ovsyannikov, V.V. ShchennikovWe report the use of the thermopower technique (Seebeck effect) as an effective tool for discovery of 'hidden' (for standard techniques, like x-ray, synchrotron, Raman, etc) phases of substances. Applying the thermopower technique to a set of GaAs single crystals pressurized in a sintered diamond... (Read more)
- 145. Jpn. J. Appl. Phys. 45, L991 (2006) , “Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides”, Kentaro Kinoshita, Tetsuro Tamura, Masaki Aoki, Yoshihiro Sugiyama and Hitoshi TanakaBoth lowering the “reset” current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. These requirements have been satisfied by using a hetero junction structure consisting of transition metal oxides, NiOy/TiOx/Pt, combining direct contact with the NiOy using a W-probe. It is considered that this configuration brought about extreme downsizing of the effective area of both the top and bottom electrodes for NiOy and thus decreased the number of filaments formed in “forming” process. Reducing the number of filaments is essential to these issues. (Read more)
- 146. Phys. Rev. B 74, 155429 (2006) , “Effect of nitrogen on the electronic properties of ultrananocrystalline diamond thin films grown on quartz and diamond substrates”, P. Achatz, O. A. Williams, P. Bruno, D. M. Gruen, J. A. Garrido, and M. StutzmannThe electronic transport properties of ultrananocrystalline diamond thin films grown from an argon-rich Ar/CH4 microwave plasma have been investigated in the temperature range from 300 up to 700 K and as a function of nitrogen added to the gas phase (from 0 to 20%). The influence of... (Read more)
- 147. Phys. Rev. B 74, 134418 (2006) , “Electron spin resonance and its implication on the maximum nuclear polarization of deuterated solid target materials”, J. Heckmann, W. Meyer, E. Radtke, G. Reicherz, and S. GoertzESR spectroscopy is an important tool in polarized solid target material research, since it allows us to study the paramagnetic centers, which are used for the dynamic nuclear polarization (DNP). The polarization behavior of the different target materials is strongly affected by the properties of... (Read more)
- 148. Phys. Rev. B 73, 165212 (2006) , “Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques”, Karl Johnston, Martin O. Henry, Deirdre McCabe, Enda McGlynn, Marc Dietrich, Eduardo Alves, and Matthew XiaThe results of photoluminescence measurements on ZnO implanted with stable and radioactive isotopes of Zn and Ga are presented. The donor-related exciton feature I8 at 3.3600 eV is suggested to be due to bound exciton recombination at Ga donors. The I1 line at... (Read more)
- 149. Phys. Rev. B 73, 165209 (2006) , “Vacancy-impurity pairs in relaxed Si1–xGex layers studied by positron annihilation spectroscopy”, M. Rummukainen, J. Slotte, K. Saarinen, H. H. Radamson, J. Hållstedt, and A. Yu. KuznetsovPositron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be... (Read more)
- 150. Phys. Rev. B 73, 165202 (2006) , “Radiation damage in silicon exposed to high-energy protons”, Gordon Davies, Shusaku Hayama, Leonid Murin, Reinhard Krause-Rehberg, Vladimir Bondarenko, Asmita Sengupta, Cinzia Davia, and Anna KarpenkoPhotoluminescence, infrared absorption, positron annihilation, and deep-level transient spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 GeV/c protons in crystalline silicon. The irradiation doses and the concentrations of carbon and oxygen in the samples... (Read more)
- 151. Phys. Rev. B 73, 134112 (2006) , “EPR g-tensor of paramagnetic centers in yttria-stabilized zirconia from first-principles calculations”, F. Pietrucci, M. Bernasconi, C. Di Valentin, F. Mauri, and C. J. PickardIn order to assign the defect responsible for the experimental electron paramagnetic resonance (EPR) signal with trigonal symmetry (T center), we have studied the properties of different paramagnetic centers in yttria-stabilized cubic zirconia by computing the EPR g-tensor from density... (Read more)
- 152. Phys. Rev. B 73, 125203 (2006) , “Origin of brown coloration in diamond”, L. S. Hounsome, R. Jones, P. M. Martineau, D. Fisher, M. J. Shaw, P. R. Briddon, and S. ÖbergMeasurements of the absorption spectra of brown natural type IIa diamond as well as brown nitrogen-doped CVD diamond are reported. These are largely featureless and increase almost monotonically from about 15.5 eV. It is argued that the brown coloration is due to an extended defect and not to... (Read more)
- 153. Phys. Rev. B 73, 085204 (2006) , “Theory of boron aggregates in diamond: First-principles calculations”, J. P. Goss and P. R. BriddonIt is well known that nitrogen forms aggregates in diamond. However, little is known regarding aggregation of boron, an impurity that can be incorporated in very high concentrations. In this paper we present the results of first-principles calculations regarding the structure and properties of... (Read more)
- 154. Phys. Rev. B 73, 081203(R) (2006) , “Muonium in InSb: Shallow acceptor versus deep trap or recombination center”, V. G. Storchak, D. G. Eshchenko, J. H. Brewer, S. P. Cottrell, and R. L. LichtiThe bound state of a muonium atom has been detected in both n-type and p-type InSb using a high-field µSR technique. The hyperfine constant obtained for this isotropic center (AT=2464±1 MHz), roughly half that of a Mu atom in vacuum, is... (Read more)
- 155. Phys. Rev. B 73, 045208 (2006) , “Characterization of Eδ and triplet point defects in oxygen-deficient amorphous silicon dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of γ-ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (Eγ, Eδ, and triplet) and one... (Read more)
- 156. Phys. Rev. B 73, 024117 (2006) , “Defect properties and p-type doping efficiency in phosphorus-doped ZnO”, Woo-Jin Lee, Joongoo Kang, and K. J. ChangBased on first-principles pseudopotential calculations, we investigated the electronic structure of various P-related defects in ZnO and the p-type doping efficiency for two forms of P dopant sources such as P2O5 and Zn3P2. As compared to N dopants,... (Read more)
- 157. Phys. Rev. Lett. 97, 256603 (2006) , “Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance”, Kazuhiro Marumoto, Shin-ichi Kuroda, Taishi Takenobu,, and Yoshihiro IwasaAn electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to... (Read more)
- 158. Phys. Rev. Lett. 96, 205504 (2006) , “First-Principles Study of the Diffusion of Hydrogen in ZnO”, M. G. Wardle, J. P. Goss, and P. R. BriddonZinc oxide, a wide-gap semiconductor, typically exhibits n-type conductivity even when nominally undoped. The nature of the donor is contentious, but hydrogen is a prime candidate. We present ab initio calculations of the migration barrier for H, yielding a barrier of less than ~0.5 ... (Read more)
- 159. Phys. Rev. Lett. 96, 196402 (2006) , “Nitrogen Vacancies as Major Point Defects in Gallium Nitride”, M. G. Ganchenkova and R. M. NieminenWe present results of ab initio calculations for vacancies and divacancies in GaN. Particular attention is paid to nitrogen vacancies and mixed Ga-N divacancies in negatively charged states, which in n-type GaN are found to be energetically comparable with gallium vacancies. We also... (Read more)
- 160. Phys. Rev. Lett. 96, 035505 (2006) , “Mutual Passivation of Donors and Isovalent Nitrogen in GaAs”, Jingbo Li, Pierre Carrier, Su-Huai Wei, Shu-Shen Li, and Jian-Bai XiaWe study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, SiGa, GeGa, SAs, and SeAs, bind to N in GaAs:N, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such... (Read more)
- 161. Physica B 376-377, 177 (2006) , Elsevier , “Micro-characterisation of Si wafers by high-pressure thermopower technique”, S.V. Ovsyannikov, V.V. Shchennikov Jr, N.A. Shaydarova, V. V. Shchennikov, A. Misiuk, D. Yang, I.V. Antonova, S.N. ShaminIn the present work a set of Czochralski-grown silicon wafers (Cz–Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region (0-20GPa). The shifts were observed in pressure of semiconductor–metal phase transition Pt determined from the S(P) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen cO (which is always present in Cz–Si) on the other hand. The dependence exhibited a maximum of Pt near cO~9×1017cm-3. (Read more)
- 162. Appl. Phys. Lett. 87, 261909 (2005) , “Generation of single color centers by focused nitrogen implantation”, J. Meijer and B. BurchardSingle defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An... (Read more)
- 163. Appl. Phys. Lett. 87, 252113 (2005) , “Electrical activation of the Fe2+/3+ trap in Fe-implanted InP”, B. FraboniWe have studied the electrical activation of the Fe2+/3+ trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the... (Read more)
- 164. Appl. Phys. Lett. 87, 252102 (2005) , “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy”, F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. LiuWe investigated photoluminescence (PL) from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si (100) by molecular-beam epitaxy. Well-resolved PL spectra were obtained from completely dopant-activated samples with hole concentrations above 1.0×1018 ... (Read more)
- 165. Appl. Phys. Lett. 87, 242903 (2005) , “Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature”, V. Ligatchev, Rusli, and Zhao PanDensity of defect states of aluminum nitride (AlN) films deposited by rf magnetron sputtering on 100-oriented silicon (Si) and 4H-silicon carbide (4H-SiC) have been investigated using the deep-level-transient-spectroscopy technique. The films were grown at room temperature with varying nitrogen flow... (Read more)
- 166. Appl. Phys. Lett. 87, 242103 (2005) , “Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions”, Marian Nanu, Florence Boulch, Joop Schoonman, and Albert GoossensDeep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2|CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated.... (Read more)
- 167. Appl. Phys. Lett. 87, 182115 (2005) , “Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy”, Z.-Q. Fang and D. C. LookAlGaN/GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with... (Read more)
- 168. Appl. Phys. Lett. 87, 172103 (2005) , “The antimony-vacancy defect in p-type germanium”, C. E. Lindberg, J. Lundsgaard Hansen, P. Bomholt, A. Mesli, K. Bonde Nielsen, and A. Nylandsted LarsenGe-n+p mesa diodes have been produced in 2-Ω cm single crystals using a molecular-beam epitaxy (MBE) process to grow the Sb-doped epitaxial Ge n+-top layer. The diodes are characterized by a leakage current at room temperature of... (Read more)
- 169. Appl. Phys. Lett. 87, 161906 (2005) , “Vacancy formation in GaAs under different equilibrium conditions”, V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-RehbergDefect properties of undoped semiinsulating and silicon doped n-type GaAs annealed at different arsenic vapor pressures have been studied by means of positron annihilation and Hall effect measurements. In both types of samples, formation of monovacancylike defects during annealing was... (Read more)
- 170. Appl. Phys. Lett. 87, 151909 (2005) , “Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration”, H. Ch. Alt and Y. V. GomeniukFourier-transform infrared absorption measurements have been carried out on nitrogen-doped Czochralski-grown silicon crystals after thermal annealing at 600 °C. The strength of the electronic transitions due to NO related shallow donors shows a square root dependence on the nitrogen... (Read more)
- 171. Appl. Phys. Lett. 87, 122102 (2005) , “Oxygen vacancies in ZnO”, Anderson Janotti and Chris G. Van de WalleThe electronic properties of ZnO have traditionally been explained by invoking intrinsic defects. In particular, the frequently observed unintentional n-type conductivity has often been attributed to oxygen vacancies. We report first-principles calculations showing that the oxygen vacancy... (Read more)
- 172. Appl. Phys. Lett. 87, 091910 (2005) , “Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam”, Z. Q. Chen, M. Maekawa, and A. KawasusoZnO crystals were implanted with N+, O+, and Al+, and co-implanted with O+/N+ and Al+/N+ ions. Positron annihilation measurements indicate introduction of vacancy clusters upon implantation. In the N+-implanted... (Read more)
- 173. Appl. Phys. Lett. 87, 051911 (2005) , “The origin of n-type conductivity in undoped In2O3”, Takumi Tomita, Kazuyoshi Yamashita, and Yoshinori HayafujiThis study explores the origin of the native donor in undoped In2O3. The electronic structure of various point defects in In2O3 clusters is studied using the first-principles molecular orbital calculation. The results show that an oxygen vacancy cannot act... (Read more)
- 174. Appl. Phys. Lett. 87, 032107 (2005) , “Interface traps and dangling-bond defects in (100)Ge/HfO2”, V. V. Afanas'ev, Y. G. Fedorenko, and A. StesmansCombined electrical and electron spin resonance analysis reveals dramatic differences in the interface defect properties of the (100)Ge/GeOxNy/HfO2 and (100)Ge/GeO2 interfaces from the seemingly similar interfaces of (100)Si with the... (Read more)
- 175. Appl. Phys. Lett. 86, 261906 (2005) , “Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation”, Michael R. Hogsed and Yung Kee YeoElectrical properties of defects induced in n-type molecular-beam-epitaxial-grown Al0.14Ga0.86N are studied using deep-level transient spectroscopy (DLTS) to explore the radiation tolerance of AlGaN-based electronic and optoelectronic devices. It has been found that four... (Read more)
- 176. Appl. Phys. Lett. 86, 222110 (2005) , “Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate”, I. P. Vorona, T. Mchedlidze, M. Izadifard, I. A. Buyanova, and W. M. ChenDilute-nitride Ga0.44In0.56NyP1y alloys with y=00.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic... (Read more)
- 177. Appl. Phys. Lett. 86, 171102 (2005) , “Optical observation of donor-bound excitons in hydrogen-implanted ZnO”, J.-K. Lee and M. NastasiThe optical and structural properties of H or He implanted ZnO were investigated using low temperature photoluminescence (PL) and infrared spectroscopy (IR). H implantation is shown to influence the relative luminescence intensities of the donor bound excitons, enhancing the 3.361 eV peak, and... (Read more)
- 178. Appl. Phys. Lett. 86, 162109 (2005) , “Electronic transitions at defect states in Cz p-type silicon”, A. Castaldini, D. Cavalcoli, and A. CavalliniPoint and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical and optical methods. Different materials (oxygen precipitated and/or deformed Cz Si and Fz Si) were examined in order to separate the role of oxygen... (Read more)
- 179. Appl. Phys. Lett. 86, 152111 (2005) , “Electrical characterization of Er- and Pr-implanted GaN films”, S. F. Song, W. D. Chen, Chunguang Zhang, Liufang Bian, and C. C. HsuHall, currentvoltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in... (Read more)
- 180. Appl. Phys. Lett. 86, 142107 (2005) , “Diffusion and dissociation mechanisms of vacancy-oxygen complex in silicon”, Masayuki Furuhashi and Kenji TaniguchiWe are examining diffusion mechanisms of the vacancy-oxygen complex (VO) in bulk Si using ab initio calculations based on a 64-atom supercell. We found two atomic mechanisms involved in the VO diffusion; one is caused by migration of an interstitial oxygen atom, another by migration of a... (Read more)
- 181. Appl. Phys. Lett. 86, 102108 (2005) , “Activation of shallow boron acceptor in C/B coimplanted silicon carbide: A theoretical study”, A. Gali, T. Hornos, and P. DeákAb initio supercell calculations have been carried out to investigate the complexes of boron acceptors with carbon self-interstitials in cubic silicon carbide. Based on the calculated binding energies, the complex formation of carbon interstitials with shallow boron acceptor and boron... (Read more)
- 182. Appl. Phys. Lett. 86, 081914 (2005) , “Photochromism of vacancy-related defects in thermochemically reduced α-Al2O3:Mg single crystals”, R. Ramírez, M. Tardío, and R. GonzálezOxygen vacancies and their aggregates are produced much more readily in Mg-doped α-Al2O3 than in undoped α-Al2O3 single crystals during thermochemical reduction at high temperatures. A reversible photochromic effect was discovered in Mg-doped... (Read more)
- 183. Appl. Phys. Lett. 86, 052109 (2005) , “Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence”, E. R. Glaser, B. V. Shanabrook, and W. E. CarlosThe conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating (SI) 4H-SiC substrates where all N shallow donors are compensated in the dark. The ratio of the nitrogen-bound exciton line... (Read more)
- 184. Appl. Phys. Lett. 86, 031915 (2005) , “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN”, F. Tuomisto and K. SaarinenWe have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga... (Read more)
- 185. J. Appl. Phys. 98, 093701 (2005) , “Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells”, H. S. Lee and M. YamaguchiPresented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08Ga0.92)0.52In0.48P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm1, which... (Read more)
- 186. J. Appl. Phys. 98, 093517 (2005) , “Large lattice relaxation deep levels in neutron-irradiated GaN”, S. Li, J. D. Zhang, C. D. Beling, K. Wang, and R. X. WangDeep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at... (Read more)
- 187. J. Appl. Phys. 98, 073502 (2005) , “Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy”, Y. W. HeoThe properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements... (Read more)
- 188. J. Appl. Phys. 98, 053704 (2005) , “Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon”, A. Armstrong and A. R. ArehartThe impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level... (Read more)
- 189. J. Appl. Phys. 98, 043709 (2005) , “Carrier compensation near tail region in aluminum- or boron-implanted 4H–SiC (0001)”, Y. Negoro, T. Kimoto, and H. MatsunamiElectrical behavior of implanted Al and B near implant-tail region in 4HSiC (0001) after high-temperature annealing has been investigated. Depth profiles of Al and B acceptors determined by capacitance-voltage characteristics are compared with those of Al and B atoms measured by... (Read more)
- 190. J. Appl. Phys. 98, 043518 (2005) , “Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide”, G. Alfieri, E. V. Monakhov, and B. G. SvenssonThe annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLTS). The nitrogen-doped epitaxial layers have been irradiated with 15-MeV electrons at room temperature... (Read more)
- 191. J. Appl. Phys. 98, 043507 (2005) , “Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon”, T. MchedlidzeThree electric-dipole spin-resonance signals, labeled TU7, TU8, and TU9, were detected after subjecting oxygen-rich silicon samples to two-step annealing procedures at 450 and 650 °C for prolonged times. The formation and structural evolution of large interstitial agglomerates, known as rodlike... (Read more)
- 192. J. Appl. Phys. 98, 033704 (2005) , “N interstitial and its interaction with substitutional Mg in p-type GaN”, R. R. Wixom and A. F. WrightDensity-functional theory and the generalized gradient approximation were utilized to investigate the local-energy-minimum configurations and formation energies of N interstitials and their interaction with substitutional Mg in p-type GaN. Along with previously proposed configurations of the... (Read more)
- 193. J. Appl. Phys. 98, 023704 (2005) , “Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry”, E. Trajkov and S. PrawerElectrically active defects and traps in sulfur-doped polycrystalline diamond films synthesized by microwave-assisted chemical-vapor deposition are evaluated using thermally stimulated conductivity measurements after ultraviolet (UV) illumination. The measurements are found to be consistent with the... (Read more)
- 194. J. Appl. Phys. 98, 013502 (2005) , “Near-band-edge slow luminescence in nominally undoped bulk ZnO”, T. Monteiro, A. J. Neves, M. C. Carmo, M. J. Soares, M. Peres, and J. WangWe report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite... (Read more)
- 195. J. Appl. Phys. 97, 123905 (2005) , “Electron paramagnetic resonance of Cr3+ in near-stoichiometric LiTaO3”, M. Loyo-Menoyo and D. J. KeebleElectron-paramagnetic-resonance (EPR) experiments on the dominant Cr3+ center in near-stoichiometric LiTaO3 crystals, grown by the double crucible Czochralski method, are reported. A near complete roadmap of EPR positions was obtained allowing an accurate determination of the... (Read more)
- 196. J. Appl. Phys. 97, 093517 (2005) , “Interaction of defects and H in proton-irradiated GaN(Mg, H)”, S. M. Myers and C. H. SeagerMagnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of... (Read more)
- 197. J. Appl. Phys. 97, 084913 (2005) , “Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition”, H. J. Chung, A. Y. Polyakov, S. W. Huh, S. Nigam, and M. SkowronskiHigh-purity 6H-SiC single crystals were grown by the halide chemical-vapor deposition process. Growth was performed in a vertical hot-wall reactor with a separate injection of a silicon precursor (silicon tetrachloride) and a carbon precursor (propane). Typical growth rates were between 100 and 300 ... (Read more)
- 198. J. Appl. Phys. 97, 063511 (2005) , “Positron beam studies of argon-irradiated polycrystal α-Zr”, Chunlan ZhouDoppler broadening spectroscopy was performed using a variable-energy positron beam to investigate the effect of defects induced by 150-keV Ar-ion-irradiated α-Zr bulk material. S parameter in the damaged layer of the as-irradiated sample induced by ion irradiation increased with the... (Read more)
- 199. J. Appl. Phys. 97, 056101 (2005) , “Triplet recombination at Pb centers and its implications for capture cross sections”, Felice Friedrich, Christoph Boehme, and Klaus LipsPulsed electrically detected magnetic resonance measurements are presented showing that Pb centers at the crystalline silicon (c-Si) (111) to silicon dioxide (SiO2) interface can cause recombination of strongly coupled spin pairs in singlet and triplet... (Read more)
- 200. J. Appl. Phys. 97, 043504 (2005) , “Photoluminescence of mechanically polished ZnO”, D. W. Hamby, D. A. Lucca, and M. J. KlopfsteinThe effects of mechanical polishing on the photoluminescence (PL) from each polar face of wurtzite-structure ZnO are presented. Differences observed for the 4.2 K PL of a mechanically polished surface when compared to that of a chemomechanically polished surface include broadened bound-exciton... (Read more)
- 201. J. Appl. Phys. 97, 023505 (2005) , “Nickel solubility in intrinsic and doped silicon”, A. A. Istratov and P. ZhangSolubility of nickel in intrinsic, moderately, and heavily doped n-type and p-type silicon was determined using instrumental neutron activation analysis. The solubility data for intrinsic silicon were found to be in good agreement with the literature data. In heavily doped... (Read more)
- 202. J. Appl. Phys. 97, 013528 (2005) , “Production and recovery of defects in phosphorus-implanted ZnO”, Z. Q. Chen, A. Kawasuso, Y. Xu, and H. NaramotoPhosphorus ions were implanted in ZnO single crystals with energies of 50380 keV having total doses of 4.2×10134.2×1015 cm2. Positron annihilation measurements reveal the introduction of vacancy clusters after implantation. These... (Read more)
- 203. J. Phys.: Condens. Matter 17, S3179 (2005) , IOP Publishing , “Phase transitions in PbSe under actions of fast neutron bombardment and pressure”, S.V. Ovsyannikov, V.V. Shchennikov, A.E. Kar’kin, B.N. GoshchitskiiIn this paper, the influences of fast neutron bombardment, high pressure and chemical substitution on the electronic properties of PbSe single crystals are studied. For the first time in p-PbSe an electronic transition has been established of 'metal–semiconductor' type accompanied by an... (Read more)
- 204. Phys. Rev. B 72, 245209 (2005) , “Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms”, N. Fukata, S. Fukuda, S. Sato, K. Ishioka, M. Kitajima, T. Hishita, and K. MurakamiThe formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of 10B with 11B were observed for some H-related... (Read more)
- 205. Phys. Rev. B 72, 235205 (2005) , “Passivation of copper in silicon by hydrogen”, C. D. Latham, M. Alatalo, R. M. Nieminen, R. Jones, S. Öberg, and P. R. BriddonThe structures and energies of model defects consisting of copper and hydrogen in silicon are calculated using the AIMPRO local-spin-density functional method. For isolated copper atoms, the lowest energy location is at the interstitial site with Td symmetry. Substitutional... (Read more)
- 206. Phys. Rev. B 72, 195211 (2005) , “Hydrogen local modes and shallow donors in ZnO”, G. Alvin Shi, Michael Stavola, S. J. Pearton, M. Thieme, E. V. Lavrov, and J. WeberThe annealing behavior of the free-carrier absorption, O-H vibrational absorption, and photoluminescence lines previously associated with H-related donors in ZnO has been studied. One set of H-related defects gives rise to O-H local vibrational mode absorption at either 3326 or 3611 ... (Read more)
- 207. Phys. Rev. B 72, 195207 (2005) , “Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon”, M. Mikelsen, E. V. Monakhov, G. Alfieri, B. S. Avset, and B. G. SvenssonIn this work the thermal kinetics of the transformation from the divacancy (V2) to the divacancy-oxygen (V2O) complex has been studied in detail, and activation energies, (Ea), have been obtained. Diffusion oxygenated float-zone silicon (DOFZ-Si)... (Read more)
- 208. Phys. Rev. B 72, 153201 (2005) , “Interstitial H2 in germanium by Raman scattering and ab initio calculations”, M. Hiller, E. V. Lavrov, J. Weber, B. Hourahine, R. Jones, and P. R. BriddonSingle-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K... (Read more)
- 209. Phys. Rev. B 72, 121201(R) (2005) , “*Cu0: A metastable configuration of the {Cus,Cui} pair in Si”, S. K. Estreicher, D. West, and M. SanatiFirst-principles theory shows that the substitutional-interstitial copper pair in Si (Si-CusCui) has a metastable state with Cui very near a tetrahedral interstitial site in a trigonal Cus-SiCui configuration... (Read more)
- 210. Phys. Rev. B 72, 115323 (2005) , “Defects in SiO2 as the possible origin of near interface traps in the SiC/SiO2 system: A systematic theoretical study”, J. M. Knaup, P. Deák, Th. Frauenheim, A. Gali, Z. Hajnal, and W. J. ChoykeA systematic study of the level positions of intrinsic and carbon defects in SiO2 is presented, based on density functional calculations with a hybrid functional in an α-quartz supercell. The results are analyzed from the point of view of the near interface traps (NIT), observed in... (Read more)
- 211. Phys. Rev. B 72, 085213 (2005) , “First-principles study of the structure and stability of oxygen defects in zinc oxide”, Paul Erhart, Andreas Klein, and Karsten AlbeA comparative study on the structure and stability of oxygen defects in ZnO is presented. By means of first-principles calculations based on local density functional theory we investigate the oxygen vacancy and different interstitial configurations of oxygen in various charge states. Our results... (Read more)
- 212. Phys. Rev. B 72, 085212 (2005) , “Photoconductivity and infrared absorption study of hydrogen-related shallow donors in ZnO”, E. V. Lavrov, F. Börrnert, and J. WeberVapor phase grown ZnO samples treated with hydrogen and/or deuterium plasma were studied by means of photoconductivity and infrared (IR) absorption spectroscopy. Three bands at 180, 240, and 310 cm1 were observed in the photoconductivity spectra of hydrogenated ZnO. These are... (Read more)
- 213. Phys. Rev. B 72, 085208 (2005) , “Capacitance transient study of the metastable M center in n-type 4H-SiC”, H. Kortegaard Nielsen, A. Hallén, and B. G. SvenssonThe metastable M center in n-type 4H silicon carbide is studied in detail after it has been introduced by 2.5 MeV proton irradiation with a fluence of 1×1012 cm2. The experimental procedures included deep-level transient spectroscopy, carrier... (Read more)
- 214. Phys. Rev. B 72, 085206 (2005) , “Introduction and recovery of point defects in electron-irradiated ZnO”, F. Tuomisto, K. Saarinen, D. C. Look, and G. C. FarlowWe have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (Eel=2 MeV, fluence 6×1017cm2) was performed at room temperature, and isochronal... (Read more)
- 215. Phys. Rev. B 72, 073205 (2005) , “Electronic behavior of rare-earth dopants in AlN: A density-functional study”, S. Petit, R. Jones, M. J. Shaw, P. R. Briddon, B. Hourahine, and T. FrauenheimLocal density functional calculations are carried out on Er, Eu, and Tm rare-earth (RE) dopants in hexagonal AlN. We find that the isolated impurities prefer to substitute for Al and, in contrast with isolated RE dopants in GaAs and GaN, REAl defects are electrically active and introduce... (Read more)
- 216. Phys. Rev. B 72, 035214 (2005) , “Vacancy-impurity complexes and limitations for implantation doping of diamond”, J. P. Goss, P. R. Briddon, M. J. Rayson, S. J. Sque, and R. JonesMany candidates have been proposed as shallow donors in diamond, but the small lattice constant means that many substitutional impurities generate large strains and thus yield low solubilities. Strained impurities favor complex formation with other defects and, in particular, the lattice vacancy. We... (Read more)
- 217. Phys. Rev. B 72, 035203 (2005) , “Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K”, L. S. Vlasenko and G. D. WatkinsIntrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K are studied by optical detection of electron paramagnetic resonance (ODEPR). Observed in the photoluminescence (PL) are ODEPR signals, which are identified with the oxygen vacancy, VO+"... (Read more)
- 218. Phys. Rev. B 72, 033202 (2005) , “Electron-nuclear double-resonance study of Mn2+ ions in ZnGeP2 crystals”, N. Y. Garces, L. E. Halliburton, P. G. Schunemann, and S. D. SetzlerElectron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) have been used to characterize isolated Mn2+ (3d5) ions in a bulk ZnGeP2 crystal grown by the horizontal Bridgman technique. From the EPR data, we obtain... (Read more)
- 219. Phys. Rev. B 72, 014115 (2005) , “Lattice sites of implanted Fe in Si”, U. Wahl, J. G. Correia, E. Rita, J. P. Araújo, J. C. Soares, and The ISOLDE CollaborationThe angular distribution of β particles emitted by the radioactive isotope 59Fe was monitored following implantation into Si single crystals at fluences from 1.4×1012 cm2 to 1×1014 cm2. We... (Read more)
- 220. Phys. Rev. B 71, 241201(R) (2005) , “Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission”, I. G. Ivanov, A. Henry, and E. JanzénThis paper deals with fitting the donor-acceptor pair luminescence due to P-Al pairs in 4H-SiC. It was possible to identify P at the Si cubic site as the shallower donor with ionization energy of 60.7 meV, as well as to distinguish the contribution in the spectrum from pairs involving this... (Read more)
- 221. Phys. Rev. B 71, 233201 (2005) , “Evidence for vacancy-interstitial pairs in Ib-type diamond”, Konstantin Iakoubovskii, Steen Dannefaer, and Andre StesmansDiamonds containing nitrogen in different forms have been irradiated by 3MeV electrons or 60Co gamma photons and characterized by optical absorption (OA) and electron spin resonance (ESR). An unusually low production rate of vacancies (V) and interstitials (I) was... (Read more)
- 222. Phys. Rev. B 71, 205212 (2005) , “Theoretical study of cation-related point defects in ZnGeP2”, Xiaoshu Jiang, M. S. Miao, and Walter R. L. LambrechtFirst-principles calculations are presented for the VZn and VGe cation vacancies and the ZnGe and GeZn antisites in ZnGeP2, using full-potential linearized muffin-tin orbital method supercell calculations in the local-density... (Read more)
- 223. Phys. Rev. B 71, 195201 (2005) , “Local modes of bond-centered hydrogen in Si:Ge and Ge:Si”, R. N. Pereira, B. Bech Nielsen, L. Dobaczewski, A. R. Peaker, and N. V. AbrosimovLocal vibrational modes of bond-centered hydrogen have been identified in Ge-doped Si (Si:Ge) and Si-doped Ge (Ge:Si) with in-situ-type infrared absorption spectroscopy. The infrared absorbance spectra recorded at 8 K immediately after implantation of the very dilute Si:Ge and Ge:Si alloys... (Read more)
- 224. Phys. Rev. B 71, 165211 (2005) , “Theory of boron-vacancy complexes in silicon”, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergThe substitutional boron-vacancy BsV complex in silicon is investigated using the local density functional theory. These theoretical results give an explanation of the experimentally reported, well established metastability of the boron-related defect observed in p-type... (Read more)
- 225. Phys. Rev. B 71, 125210 (2005) , “Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO”, L. S. Vlasenko and G. D. WatkinsThe dominant defect observed in the photoluminescence (PL) of room-temperature electron-irradiated ZnO by optical detection of electron paramagnetic resonance (ODEPR) is determined to be the positively charged oxygen vacancy (VO+" align="middle">). Its spectrum, labeled L3,... (Read more)
- 226. Phys. Rev. B 71, 125209 (2005) , “Properties of Ga-interstitial defects in AlxGa1–xNyP1–y”, N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, Sukit Limpijumnong, S. B. Zhang, Y. G. Hong, H. P. Xin, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. YonezuA detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of... (Read more)
- 227. Phys. Rev. B 71, 115213 (2005) , “Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam”, Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. OhdairaZnO crystals were implanted with 2080 keV hydrogen ions up to a total dose of 4.4×1015 cm2. Positron lifetime and Doppler broadening of annihilation radiation measurements show introduction of zinc vacancy-related defects after implantation. These vacancies... (Read more)
- 228. Phys. Rev. B 71, 075421 (2005) , “N-type electric conductivity of nitrogen-doped ultrananocrystalline diamond films”, Ying Dai, Dadi Dai, Cuixia Yan, Baibiao Huang, and Shenghao HanThe electronic structures of several possible nitrogen-related centers on the diamond surface and in the diamond grain-boundary have been studied using density functional theory approaches with cluster models. The results indicate that the nitrogen-vacancy related complex may be the shallow donor... (Read more)
- 229. Phys. Rev. B 71, 035205 (2005) , “Dominant hydrogen-oxygen complex in hydrothermally grown ZnO”, E. V. Lavrov, F. Börrnert, and J. WeberA hydrogen-related defect labeled as H-I*, observed in as-grown hydrothermal ZnO, is studied by means of infrared absorption spectroscopy. The defect possesses a stretch local vibrational mode at 3577.3 cm1 that is associated with a single hydrogen atom bound to oxygen with the O-H... (Read more)
- 230. Phys. Rev. Lett. 95, 225502 (2005) , “Evidence for Native-Defect Donors in n-Type ZnO”, D. C. Look, G. C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, S. B. Zhang, and K. NordlundRecent theory has found that native defects such as the O vacancy VO and Zn interstitial ZnI have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory... (Read more)
- 231. Phys. Rev. Lett. 95, 105502 (2005) , “Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond”, M. J. Shaw, P. R. Briddon, J. P. Goss, M. J. Rayson, A. Kerridge, A. H. Harker, and A. M. StonehamOur ab initio calculations of the hyperfine parameters for negatively charged vacancy-hydrogen and nitrogen-vacancy-hydrogen complexes in diamond compare static defect models and models which account for the quantum tunneling behavior of hydrogen. The static models give rise to hyperfine... (Read more)
- 232. Phys. Rev. Lett. 94, 186101 (2005) , “Geometric Characterization of a Singly Charged Oxygen Vacancy on a Single-Crystalline MgO(001) Film by Electron Paramagnetic Resonance Spectroscopy”, Martin Sterrer, Esther Fischbach, Thomas Risse, and Hans-Joachim FreundElectron paramagnetic resonance spectra of singly charged surface oxygen vacancies (F or color centers) formed by electron bombardment on a single-crystalline MgO film under UHV conditions are reported. The embedding of the defect in a well-defined geometrical environment allows not only for... (Read more)
- 233. Phys. Rev. Lett. 94, 165501 (2005) , “Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy”, M. Rummukainen, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, and H.-J. L. GossmannPositron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 12 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the... (Read more)
- 234. Phys. Rev. Lett. 94, 125501 (2005) , “Delocalized Nature of the Edelta[prime]" align="middle"> Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of Edelta[prime]" align="middle"> point defect induced by γ-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR... (Read more)
- 235. Phys. Rev. Lett. 94, 097602 (2005) , “Shallow Donors in Semiconductor Nanoparticles: Limit of the Effective Mass Approximation”, Serguei B. Orlinskii, Jan Schmidt, Edgar J. J. Groenen, Pavel G. Baranov, Celso de Mello Donegá, and Andries MeijerinkThe spatial distribution of the electronic wave function of a shallow, interstitial Li donor in a ZnO semiconductor nanocrystal has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by electron nuclear double resonance... (Read more)
- 236. Appl. Phys. Lett. 85, 943-945 (2004) , “Paramagnetic defects of silicon nanowires”, A. Baumer, M. Stutzmann, and M. S. BrandtThe paramagnetic defects in and on Si nanowires (SiNWs) obtained by oxide-assisted growth were studied by conventional electron spin resonance spectroscopy. For the as-grown nanowires, three different defects were found: Dangling bonds or Pb-centers with g = 2.0065, located... (Read more)
- 237. Appl. Phys. Lett. 85, 4902-4904 (2004) , “Anomalous energetics and defect-assisted diffusion of Ga in silicon”, Claudio Melis, Giorgia M. Lopez, and Vincenzo FiorentiniWe study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast to B and In, the favored Ga/self-interstitial complex is the tetrahedral interstitial GaT. Thus in the presence of self-interstitials Ga becomes interstitial, and is... (Read more)
- 238. Appl. Phys. Lett. 85, 4633-4635 (2004) , “Electrical and optical properties of rod-like defects in silicon”, J. P. Goss and P. R. BriddonSelf-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more... (Read more)
- 239. Appl. Phys. Lett. 85, 384-386 (2004) , “Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide”, C. C. Ling, M. K. Lui, S. K. Ma, X. D. Chen, S. Fung, and C. D. BelingAcceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at EV + 34 meV is found... (Read more)
- 240. Appl. Phys. Lett. 85, 2827-2829 (2004) , “Formation of Ga interstitials in (Al,In)yGa1–yNxP1–x alloys and their role in carrier recombination”, N. Q. Thinh, I. P. Vorona, M. Izadifard, I. A. Buyanova, and W. M. ChenFormation of complex defects involving a Ga interstitial (Gai) in (Al,In)yGa1yNxP1x alloys and their effects on optical quality are studied by photoluminescence (PL) and optically detected magnetic... (Read more)
- 241. Appl. Phys. Lett. 84, 720-722 (2004) , “Isolated nickel impurities in diamond: A microscopic model for the electrically active centers”, R. Larico, L. V. C. Assali, and W. V. M. MachadoWe present a theoretical investigation on the structural and electronic properties of isolated nickel impurities in diamond. The atomic structures, symmetries, formation and transition energies, and hyperfine parameters of isolated interstitial and substitutional Ni were computed using ab... (Read more)
- 242. Appl. Phys. Lett. 84, 4887-4889 (2004) , “Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry”, M. Rummukainen, J. Oila, A. Laakso, and K. SaarinenPositron annihilation spectroscopy is used to study vacancy defects in GaN grown by molecular-beam epitaxy due to different polar directions and varying stoichiometry conditions during oxygen doping. We show that Ga-polar material is free of compensating Ga vacancies up to [O] = 1018 ... (Read more)
- 243. Appl. Phys. Lett. 84, 4574-4576 (2004) , “Paramagnetic NO2 centers in thin γ-irradiated HfO2 layers on (100)Si revealed by electron spin resonance”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) analysis reveals the incorporation of N in (100)Si/HfO2 structures with ultrathin amorphous HfO2 films deposited by chemical vapor deposition (CVD) using Hf(NO3)4 as precursor, through detection, after 60Co... (Read more)
- 244. Appl. Phys. Lett. 84, 4514-4516 (2004) , “Doping-level-dependent optical properties of GaN:Mn”, O. Gelhausen, E. Malguth, and M. R. PhillipsThe optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (523×1019 cm3) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption peak at... (Read more)
- 245. Appl. Phys. Lett. 84, 3894-3896 (2004) , “H-related defect complexes in HfO2: A model for positive fixed charge defects”, Joongoo Kang, E.-C. Lee, and K. J. ChangBased on first-principles theoretical calculations, we investigate the hydrogenation effect on the defect properties of oxygen vacancies (VO) in HfO2. A defect complex of VO and H behaves as a shallow donor for a wide range of Fermi levels, with a... (Read more)
- 246. Appl. Phys. Lett. 84, 3876-3878 (2004) , “Observation of a Be-correlated donor state in GaN”, F. Albrecht, U. Reislöhner, G. Pasold, C. Hülsen, and W. WitthuhnA Be-related donor level was identified in the band gap of GaN. Thermal admittance spectroscopy (TAS) was combined with the radiotracer principle by applying the radioactive isotope 7Be which was implanted into n-type and p-type GaN. TAS spectra of n-type GaN... (Read more)
- 247. Appl. Phys. Lett. 84, 374-376 (2004) , “Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition”, A. Armstrong and A. R. ArehartThe effect of excess C incorporation on the deep level spectrum of n-type GaN grown by metalorganic chemical vapor deposition was investigated. Low-pressure (LP) growth conditions were used to intentionally incorporate excess C compared to atmospheric pressure (AP) growth conditions. GaN... (Read more)
- 248. Appl. Phys. Lett. 84, 3486-3488 (2004) , “Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire”, S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, and Y. L. WangOptical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50 keV Ga+ focused ion beam in the fluence range of 1×10142×1016 ions cm2 is used for the irradiation... (Read more)
- 249. Appl. Phys. Lett. 84, 3064-3066 (2004) , “Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC”, F. Schmid and G. PenslThe annealing behavior of P+ and N+ ions implanted into p-type 4H-SiC epilayers is studied by a temperature-dependent Hall-effect. Detailed investigations reveal that the electrical activation of implanted P+ ions is governed by the site competition effect,... (Read more)
- 250. Appl. Phys. Lett. 84, 3049-3051 (2004) , “Determination of the ionization energy of nitrogen acceptors in zinc oxide using photoluminescence spectroscopy”, Lijun Wang and N. C. GilesPhotoluminescence spectroscopy of nitrogen-related emissions in ZnO is used to establish the ionization energy of the substitutional nitrogen acceptor. The temperature dependence of the nitrogen-related electron-acceptor (e,A0) emission band has been monitored in as-grown... (Read more)
- 251. Appl. Phys. Lett. 84, 2841-2843 (2004) , “Structure and electrical activity of rare-earth dopants in GaN”, J.-S. Filhol and R. JonesDensity functional theory is used to investigate Eu, Er, and Tm rare earth (RE) impurities in GaN, paying particular attention to their structure, energetics, and electronic properties. The most stable site is when the RE is located at a Ga substitutional site but none of the defects possess deep... (Read more)
- 252. Appl. Phys. Lett. 84, 2760-2762 (2004) , “Activation mechanism of annealed Mg-doped GaN in air”, Yow-Jon LinIn this study, the activation mechanism of annealed Mg-doped GaN in air and the influence of ambient on activation of Mg-doped GaN were investigated. According to the experimental results, we found that the dissociation of MgGaH, and the formation of hydrogenated gallium vacancies... (Read more)
- 253. Appl. Phys. Lett. 84, 2349-2351 (2004) , “Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes”, Mariko Suzuki, Hiroaki Yoshida, Naoshi Sakuma, Tomio Ono, and Tadashi SakaiTemperature-dependent currentvoltage (IV), capacitancevoltage (CV) measurements, and frequency-dependent CV measurements have been carried out to investigate electrical properties of phosphorus (P)-doped n-type... (Read more)
- 254. Appl. Phys. Lett. 84, 2277-2279 (2004) , “Passivation of Mn acceptors in GaMnAs”, M. S. Brandt, S. T. B. Goennenwein, T. A. Wassner, F. Kohl, A. Lehner, H. Huebl, T. Graf, and M. StutzmannThe effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (1021 cm3) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to... (Read more)
- 255. Appl. Phys. Lett. 84, 2106-2108 (2004) , “Room-temperature silicon light-emitting diodes based on dislocation luminescence”, V. Kveder, M. Badylevich, E. Steinman, and A. IzotovWe demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity... (Read more)
- 256. Appl. Phys. Lett. 84, 2055-2057 (2004) , “Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions”, B. J. Pawlak and R. SurdeanuWe investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and characterization by sheet resistance, secondary-ion mass spectrometry, and spreading-resistance measurement are used to extract detailed... (Read more)
- 257. Appl. Phys. Lett. 84, 197-199 (2004) , “Narrow, deep level cathodoluminescence emission from semi-insulating GaAs”, J. K. RadhakrishnanCathodoluminescence investigations on bulk undoped semi-insulating GaAs samples taken from different sources reveal the presence of a deep level emission at 0.9 eV at 77 K, with a narrow full width at half maximum of 8 meV. The temperature-dependent and beam-parameter-dependent studies indicate... (Read more)
- 258. Appl. Phys. Lett. 84, 1895-1897 (2004) , “Mechanism of p-type-to-n-type conductivity conversion in boron-doped diamond”, Ying DaiWe report on the role of two boronhydrogen complexes in the conductivity conversion from p-type to n-type in boron-doped diamond samples. The calculated electronic structures of the simulated clusters show that the boronhydrogen complex of hydrogenboron pairs... (Read more)
- 259. Appl. Phys. Lett. 84, 1889-1891 (2004) , “"Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers”, A. Kvit, A. Karoui, G. Duscher, and G. A. RozgonyiNitrogen effect on nucleation of oxygen precipitates in Czochralski Si has been investigated by transmission electron microscopy, Z-contrast imaging, and electron energy loss spectrometry (EELS). We have examined unusual "umbrella" shape oxygen precipitates in bulk of ingot in... (Read more)
- 260. Appl. Phys. Lett. 84, 1862-1864 (2004) , “Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si”, G. Impellizzeri, J. H. R. dos Santos, S. Mirabella, and F. PrioloWe have explained the role of fluorine in the reduction of the self-interstitial population in a preamorphized Si layer under thermal treatment. For this purpose, we have employed a B spike layer grown by molecular-beam epitaxy as a marker for the self-interstitial local concentration. The... (Read more)
- 261. Appl. Phys. Lett. 84, 1859-1861 (2004) , “Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy”, M. Ramsteiner, D. S. Jiang, J. S. Harris, and K. H. PloogNitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E+ transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate... (Read more)
- 262. Appl. Phys. Lett. 84, 1713-1715 (2004) , “EL2-related metastable defects in semi-insulating GaAs”, D. KabirajThermally stimulated current spectroscopy, photoquenching, and photorecovery have been used to reveal the EL2-related metastable defect levels in semi-insulating GaAs. It has been found that one set of metastable levels is directly related to EL2 and the other set is indirectly related to EL2 defect... (Read more)
- 263. Appl. Phys. Lett. 84, 1698-1700 (2004) , “Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen”, Suku Kim, B. S. Kang, and F. RenPt/ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5 V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H2 is introduced into a N2 ambient at 25 °C. The rectifying currentvoltage... (Read more)
- 264. Appl. Phys. Lett. 84, 1683-1685 (2004) , “Optically active erbium–oxygen complexes in GaAs”, J. CoutinhoDensity functional modeling of Er and ErO complexes in GaAs show that Er impurities at the Ga site are not efficient channels for exciton recombination, but decorative O atoms play crucial roles in inhibiting Er precipitation and in creating the necessary conditions for electron-hole capture.... (Read more)
- 265. Appl. Phys. Lett. 84, 1576-1578 (2004) , “Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes”, S. Maximenko, S. Soloviev, D. Cherednichenko, and T. SudarshanThe electron-beam-induced current (EBIC) method was employed to investigate the electrical activity of dislocations in silicon carbide Schottky and diffused pn diodes. Dislocations in Schottky diodes appear as dark spots with the EBIC current signal at the dislocations reduced... (Read more)
- 266. Appl. Phys. Lett. 84, 1492-1494 (2004) , “Comparative study of defect energetics in HfO2 and SiO2”, W. L. Scopel, Antônio J. R. da Silva, W. Orellana, and A. FazzioWe perform ab initio calculations, based on density functional theory, for substitutional and vacancy defects in the monoclinic hafnium oxide (m-HfO2) and α-quartz (SiO2). The neutral oxygen vacancies and substitutional Si and Hf defects in HfO2... (Read more)
- 267. J. Appl. Phys. 96, 747 (2004) , “Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy”, Sung-Yong Chung, Niu Jin, Ryan E. Pavlovicz, and Paul R. BergerDeep-level transient spectroscopy (DLTS) measurements were performed in order to investigate the effects of post-growth heat treatment on deep level defects in Si layers grown by low-temperature molecular-beam epitaxy (LT-MBE) at 320 °C. In the LT-MBE as-grown samples, two dominant... (Read more)
- 268. J. Appl. Phys. 96, 6789 (2004) , “The role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes”, Koji KatayamaThe role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes under operation was investigated. The generation rate of microscopic dark spots, which do not correspond to the original stacking faults or threading dislocations in the epilayer, was found to... (Read more)
- 269. J. Appl. Phys. 96, 530 (2004) , “Properties of arsenic antisite defects in Ga1–xMnxAs”, A. Wolos and M. KaminskaWe report the results of optical absorption measurements on Ga1xMnxAs layers grown by low-temperature molecular beam epitaxy. In the paramagnetic layers grown at very low temperatures (below 250 °C) the experiments reveal an absorption band at 1.2 eV... (Read more)
- 270. J. Appl. Phys. 96, 4960 (2004) , “Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions”, I. O. UsovThe diffusion behavior of boron (B) and nitrogen (N) implanted in 6H and 4H silicon carbide (SiC) samples was investigated using secondary ion mass spectroscopy. The samples were either coimplanted with B and N ions or implanted with each element alone. The annealing was performed at 1700 °C... (Read more)
- 271. J. Appl. Phys. 96, 4909 (2004) , “Deep levels created by low energy electron irradiation in 4H-SiC”, L. Storasta, J. P. Bergman, E. Janzén, and A. HenryWith low energy electron irradiation in the 80250 keV range, we were able to create only those intrinsic defects related to the initial displacements of carbon atoms in the silicon carbide lattice. Radiation induced majority and minority carrier traps were analyzed using capacitance transient... (Read more)
- 272. J. Appl. Phys. 96, 3687 (2004) , “Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon”, Daniel MacdonaldThe impact of residual recombination centers after low-energy self-implantation of crystalline silicon wafers and annealing at 900 °C has been determined by bulk carrier lifetime measurements as a function of implant dose. Doses below 1013 cm2 resulted in no... (Read more)
- 273. J. Appl. Phys. 96, 320 (2004) , “Passivation of double-positioning twin boundaries in CdTe”, Yanfa Yan, M. M. Al-Jassim, and K. M. JonesWe present density-functional total-energy calculations to investigate the passivation effects of impurity elements such as Br, Cl, S, O, H, and Na on double-positioning twin boundaries in CdTe. We find that Br, Cl, S, and O atoms present passivation effects on the boundaries with different degrees,... (Read more)
- 274. J. Appl. Phys. 96, 1563 (2004) , “Electrical properties of GaSe doped with Er”, Yu-Kuei Hsu and Chen-Shiung ChangMeasurements of the Hall effect and Er-related luminescence were made on Er-doped GaSe. Deep-level transient spectroscopy (DLTS) was also performed. Hall measurements show that hole concentrations of 0.2%, 0.5%, and 1% Er-doped GaSe samples are 1.5×10176×1017... (Read more)
- 275. J. Appl. Phys. 96, 1341 (2004) , “Assignment of deep levels causing yellow luminescence in GaN”, C. B. Soh, S. J. Chua, and H. F. LimThe deep levels in GaN associated with yellow luminescence transitions have been investigated using photoluminescence, Hall measurements, and deep level transient spectroscopy (DLTS). Hall measurements on Si-doped GaN show the presence of donor levels at ~18, ~35, and ~70 meV, which are respectively... (Read more)
- 276. J. Appl. Phys. 95, 913 (2004) , “Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam”, A. UedonoPositron annihilation was used to probe vacancy-type defects in electroplated Cu films. Doppler broadening spectra of the annihilation radiation for Cu films deposited on samples with a Ta(20 nm)/SiO2(100 nm)/Si structure were measured with a monoenergetic positron beam. For an... (Read more)
- 277. J. Appl. Phys. 95, 8469 (2004) , “Self-diffusion of 12C and 13C in intrinsic 4H–SiC”, M. K. Linnarsson and M. S. JansonSelf-diffusion of carbon (12C and 13C) in low-doped (intrinsic) 4HSiC has been studied using secondary ion mass spectrometry. A two layer 13C enriched structure with 13C/12C ratios of 0.01 and 0.1, respectively, have been prepared by... (Read more)
- 278. J. Appl. Phys. 95, 8092 (2004) , “Determination of functional center local environment in copper-modified Pb[Zr0.54Ti0.46]O3 ceramics”, Rüdiger-A. EichelFerroelectric copper(II)-modified polycrystalline Pb[Zr0.54Ti0.46]O3 ceramics with a dopant concentration of 0.25 mol % were investigated by means of electron paramagnetic resonance and hyperfine sublevel correlation spectroscopy. Special emphasis was put on the... (Read more)
- 279. J. Appl. Phys. 95, 69 (2004) , “Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes”, Souvick Mitra and Mulpuri V. RaoPlanar n+p and p+n junction diodes, fabricated in 4H-SiC epitaxial layers using a double-implantation technology (a deep-range acceptor followed by a shallow-range donor implantation and vice versa), are characterized using capacitance... (Read more)
- 280. J. Appl. Phys. 95, 6092 (2004) , “Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation”, D. Nobili, S. Solmi, and M. FerriCarrier density and mobility measurements were performed on heavily arsenic-doped silicon-on-insulator specimens after 2 MeV implantation of Si+ ions. It is found that implantation induces a marked reduction of the electron density, which increases with the concentration of active dopant,... (Read more)
- 281. J. Appl. Phys. 95, 57 (2004) , “Vacancy-related defect distributions in 11B-, 14N-, and 27Al-implanted 4H–SiC: Role of channeling”, M. S. JansonThe defect distributions in 11B-, 14N-, and 27Al-implanted epitaxial 4HSiC are studied using monoenergetic positron beams. At least three types of defects are needed to account for the Doppler broadening annihilation spectra and two of the defects are... (Read more)
- 282. J. Appl. Phys. 95, 4752 (2004) , “Electrically active defects induced by sputtering deposition on silicon: The role of hydrogen”, F. Volpi and A. R. PeakerWe present a study of the electrically active defects produced in p-type silicon crystals underneath a titanium layer deposited by sputtering to form a Schottky contact. The defects were investigated by Deep Level Transient Spectroscopy and free carrier profiles were determined by... (Read more)
- 283. J. Appl. Phys. 95, 4728 (2004) , “Electrically active defects in irradiated 4H-SiC”, M. L. David4H-SiC epilayers were irradiated with either protons or electrons and electrically active defects were studied by means of deep level transient spectroscopy. Motion of defects has been found to occur at temperature as low as 350400 K. Indeed, the application of an electric field has been found... (Read more)
- 284. J. Appl. Phys. 95, 4655 (2004) , “Hydrogen behavior in SiO2 with high density of defects and locally concentrated silicon”, M. Ikeda, M. Nakagawa, R. Mitsusue, S. Kondo, and N. ImanishiUsing ion implantation techniques, we have studied the trapping, detrapping, and diffusion of H in SiO2 containing a high density of defects and a high concentration of excess Si. In SiO2 sample implanted with Si and H, the implanted H moves toward the surface after stopping at... (Read more)
- 285. J. Appl. Phys. 95, 3404 (2004) , “Identification of vacancy–oxygen complexes in oxygen-implanted silicon probed with slow positrons”, M. Fujinami, T. Miyagoe, and T. SawadaDefects and their annealing behavior for low (2×1015/cm2) and high (1.7×1018/cm2) doses of 180 keV oxygen-implanted silicon have been investigated by the coincidence Doppler broadening (CDB) and lifetime measurements in variable-energy positron... (Read more)
- 286. J. Appl. Phys. 95, 3385 (2004) , “Optical investigations on the annealing behavior of gallium- and nitrogen-implanted ZnO”, F. ReussGallium and nitrogen ions have been implanted into ZnO crystals and metal organic vapor phase epitaxy grown ZnO layers. Postimplantation annealing behavior in the temperature range between 200 and 900 °C has been studied by means of Raman scattering and low-temperature photoluminescence. The... (Read more)
- 287. J. Appl. Phys. 95, 2532 (2004) , “Electrical resistivity of acceptor carbon in GaAs”, A. Ferreira da Silva and I. PepeThe electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm3. Good agreement was obtained between the measured... (Read more)
- 288. Phys .Rev. Lett. 92, 178302 (2004) , “Nonvolatile Memory with Multilevel Switching: A Basic Model”, M. J. Rozenberg, I. H. Inoue, and M. J. SánchezThere is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the... (Read more)
- 289. Phys. Rev. B 70, 235208 (2004) , “Interstitial nitrogen and its complexes in diamond”, J. P. Goss, P. R. Briddon, S. Papagiannidis, and R. JonesNitrogen, a common impurity in diamond, can be displaced into an interstitial location by irradiation. The resultant interstitial defects are believed to be responsible for a range of infrared and electronic transitions that vary in thermal stability, and on the type of diamond. Of particular... (Read more)
- 290. Phys. Rev. B 70, 205214 (2004) , “Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique”, W. Ulrici and B. ClerjaudIn LEC-grown GaAs:S, two vibrational absorption lines are measured at 2382.2 and 2392.8 cm1 (T = 7 K) and assigned to 11B-H and 10B-H stretching modes. Uniaxial stress experiments reveal that the symmetry of the responsible complex is... (Read more)
- 291. Phys. Rev. B 70, 205211 (2004) , “Ni-vacancy defect in diamond detected by electron spin resonance”, K. IakoubovskiiTrigonal S = 1 NOL1/NIRIM5 center has been characterized by electron spin resonance (ESR) in nickel and boron doped diamond grown by the high-pressure high-temperature technique. Hyperfine interaction structure has been detected and attributed to six equivalent carbon sites and one Ni site.... (Read more)
- 292. Phys. Rev. B 70, 205203 (2004) , “Properties and formation mechanism of tetrainterstitial agglomerates in hydrogen-doped silicon”, Teimuraz Mchedlidze and Masashi SuesawaFor the tetrainterstitial agglomerate (I4), four additional silicon (Si) atoms are incorporated in an ordinary unit cell of Si lattice in such a manner that all atoms are four-coordinated and angles between bonds are not disturbed significantly. Microstructure, electrical... (Read more)
- 293. Phys. Rev. B 70, 205201 (2004) , “Interaction of hydrogen with boron, phosphorus, and sulfur in diamond”, E. B. Lombardi, Alison Mainwood, and K. OsuchThe production of n-type doped diamond has proved very difficult. Phosphorus, and possibly sulfur, when in substitutional sites in the lattice, forms a donor which could be used in electronic devices. Boron, which is a relatively shallow acceptor, can be passivated by hydrogen, and it is... (Read more)
- 294. Phys. Rev. B 70, 144111 (2004) , “Identification of Cr3+ centers in Cs2NaAlF6 and Cs2NaGaF6 crystals by EPR and ENDOR paramagnetic resonance techniques”, H. Vrielinck, F. Loncke, F. Callens, P. Matthys, and N. M. KhaidukovChromium-doped Cs2NaAlF6 and Cs2NaGaF6 crystals have been investigated by using the techniques of electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) at X-band (9.5 GHz) and Q-band (34 GHz) frequencies. In both... (Read more)
- 295. Phys. Rev. B 70, 121201(R) (2004) , “Identification of Ga-interstitial defects in GaNyP1–y and AlxGa1–xNyP1–y”, N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, Sukit Limpijumnong, S. B. Zhang, Y. G. Hong, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. YonezuTwo Ga-interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1y and... (Read more)
- 296. Phys. Rev. B 70, 115210 (2004) , “Possible p-type doping with group-I elements in ZnO”, Eun-Cheol Lee and K. J. ChangBased on first-principles calculations, we suggest a method for fabricating p-type ZnO with group-I elements such as Li and Na. With group-I dopants alone, substitutional acceptors are mostly self-compensated by interstitial donors. In ZnO codoped with H impurities, the formation of... (Read more)
- 297. Phys. Rev. B 70, 115206 (2004) , “Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO”, G. N. Aliev, S. J. Bingham, D. Wolverson, J. J. Davies, H. Makino, H. J. Ko, and T. YaoOptically detected magnetic resonance (ODMR) experiments on epitaxial nitrogen-doped ZnO show spectra due to (i) a shallow donor with the full wurtzite symmetry, (ii) a previously unobserved spin-1/2 center of axial symmetry whose principal axis is tilted slightly away from the crystal c... (Read more)
- 298. Phys. Rev. B 70, 035203 (2004) , “High-resolution local vibrational mode spectroscopy and electron paramagnetic resonance study of the oxygen-vacancy complex in irradiated germanium”, P. Vanmeerbeek, P. Clauws, H. Vrielinck, B. Pajot, L. Van Hoorebeke, and A. Nylandsted LarsenIt was recently discovered that in electron-irradiated germanium doped with oxygen a local vibrational mode occurs at 669 cm1 that could be ascribed to the negatively charged oxygen-vacancy complex (VO). In the 669 cm1 band and in another... (Read more)
- 299. Phys. Rev. B 70, 033204 (2004) , “Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon”, Eisuke Abe, Kohei M. Itoh, Junichi Isoya, and Satoshi YamasakiWe report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29Si and natural abundance Si (natSi) single crystals measured at 8 K. The two-pulse echo decay curves for both samples show... (Read more)
- 300. Phys. Rev. B 70, 024105 (2004) , “X- and Q-band ENDOR study of the Fe+(II) center in chlorinated SrCl2:Fe crystals”, D. Ghica, S. V. Nistor, H. Vrielinck, F. Callens, and D. SchoemakerThe 001 axially symmetric Fe+(II) center observed in SrCl2:Fe2+ crystals has been studied by the electron nuclear double resonance (ENDOR) technique in the microwave X and Q bands. This center is produced only in crystals grown in chlorine atmosphere... (Read more)
- 301. Phys. Rev. B 69, 245207 (2004) , “Donor level of bond-center hydrogen in germanium”, L. Dobaczewski, K. Bonde Nielsen, N. Zangenberg, B. Bech Nielsen, A. R. Peaker, and V. P. MarkevichWe apply Laplace deep-level transient spectroscopy (LDLTS) in situ after low-temperature proton implantation into crystalline n-type germanium and identify a deep metastable donor center. The activation energy of the donor emission is ~110 meV when extrapolated to zero electric field.... (Read more)
- 302. Phys. Rev. B 69, 193202 (2004) , “Optical and electrical properties of vanadium and erbium in 4H-SiC”, D. Prezzi, T. A. G. Eberlein, J.-S. Filhol, R. Jones, M. J. Shaw, P. R. Briddon, and S. ÖbergLocal-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While... (Read more)
- 303. Phys. Rev. B 69, 165215 (2004) , “Boron-hydrogen complexes in diamond”, J. P. Goss, P. R. Briddon, S. J. Sque, and R. JonesBoron in diamond traps hydrogen forming passive Bs-H pairs. Boron trapping two deuterium atoms has been speculated as forming a shallow donor (0.230.34 eV below the conduction band). We present the results of first-principles calculations of boron complexes with 24... (Read more)
- 304. Phys. Rev. B 69, 165206 (2004) , “Structural and vibrational properties of {N,N} pairs and {N,H} complexes in Si”, J. L. McAfee, He Ren, and S. K. EstreicherFirst-principles molecular-dynamics simulations are used to predict the structures and binding energies of interstitial nitrogen Ni, substitutional nitrogen Ns, the Ni-self-interstitial complex, the {Ni,Ni}, {Ni,Ns} =... (Read more)
- 305. Phys. Rev. B 69, 155206 (2004) , “Structure, energetics, and extrinsic levels of small self-interstitial clusters in silicon”, Giorgia M. Lopez and Vincenzo FiorentiniNative defects in Si are of obvious importance in microelectronic device processing. Self-interstitials in particular are known to mediate, in many cases, anomalous impurity diffusion. Here we study the energetics and electronic structure of single, double, and triple self-interstitial clusters in... (Read more)
- 306. Phys. Rev. B 69, 153202 (2004) , “Divacancy annealing in Si: Influence of hydrogen”, E. V. Monakhov, A. Ulyashin, G. Alfieri, A. Yu. Kuznetsov, B. S. Avset, and B. G. SvenssonWe have performed comparative studies of divacancy (V2) annealing in hydrogenated and nonhydrogenated Si by deep level transient spectroscopy. It is shown that the nonhydrogenated samples demonstrate the formation of divacancy-oxygen (V2O) complex during annealing of... (Read more)
- 307. Phys. Rev. B 69, 125218 (2004) , “Structure and properties of vacancy-oxygen complexes in Si1–xGex alloys”, V. P. Markevich, A. R. Peaker, J. Coutinho, R. Jones, V. J. B. Torres, S. Öberg, P. R. Briddon, L. I. Murin, L. Dobaczewski, and N. V. AbrosimovThe electronic properties and structure of vacancy-oxygen (VO) complexes in Czochralski-grown Si1xGex crystals (0<x<0.06) have been studied by means of capacitance transient techniques and ab initio modeling. At least three configurations... (Read more)
- 308. Phys. Rev. B 69, 125217 (2004) , “Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency”, Y. Tokuyama, M. Suezawa, N. Fukata, T. Taishi, and K. HoshikawaWe studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH2, a complex of one self-interstitial (I) and two H atoms. If the IH2 concentration depends on species of... (Read more)
- 309. Phys. Rev. B 69, 125214 (2004) , “Spectroscopic evidence for a N-Ga vacancy defect in GaAs”, H. Ch. Alt, Y. V. Gomeniuk, and B. WiedemannA local vibrational mode occurring at 638 cm1 in nitrogen-rich GaAs bulk crystals and 14N-implanted GaAs layers has been investigated by high-resolution Fourier transform infrared absorption spectroscopy. Measurements on samples coimplanted with 14N and... (Read more)
- 310. Phys. Rev. B 69, 125210 (2004) , “Dissociation of H-related defect complexes in Mg-doped GaN”, O. Gelhausen, M. R. Phillips, E. M. Goldys, T. Paskova, B. Monemar, M. Strassburg, and A. HoffmannPost-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately... (Read more)
- 311. Phys. Rev. B 69, 115212 (2004) , “Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance”, Yu. V. Gorelkinskii and G. D. WatkinsThe effect of 2.5 MeV electron irradiation in situ at 4.2 K on the properties of single crystalline ZnO is studied by photoluminescence (PL) and optically detected electron paramagnetic resonance (ODEPR). A new PL band is produced by the irradiation, and several annealing stages are observed... (Read more)
- 312. Phys. Rev. B 69, 115205 (2004) , “Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si”, V. Ranki, A. Pelli, and K. SaarinenPositron annihilation experiments have been performed to identify defects created by annealing of electron irradiated of heavily As-, P-, and Sb-doped Si samples. We show that the vacancy-donor pairs (V-D1) migrate around 450 K, transforming into... (Read more)
- 313. Phys. Rev. B 69, 075210 (2004) , “Isoelectronic oxygen-related defect in CdTe crystals investigated using thermoelectric effect spectroscopy”, Salah A. Awadalla, Alan W. Hunt, Kelvin G. Lynn, Howard Glass, Csaba Szeles, and Su-Huai WeiAn oxygen-related defect was studied in nominally undoped CdTe crystals grown by the high pressure Bridgman technique using thermo-electrical effect spectroscopy and first-principles band structure calculations. Based on the linear relationship between the oxygen concentration and the emitted charge... (Read more)
- 314. Phys. Rev. B 69, 045208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, and Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 315. Phys. Rev. B 69, 045207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, and Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 316. Phys. Rev. B 69, 045201 (2004) , “Hydrogenation of the dominant interstitial defect in irradiated boron-doped silicon”, N. Yarykin, O. V. Feklisova, and J. WeberThe H3-center with a level at Ev + 0.535 eV is observed in hydrogenated electron-irradiated boron-doped silicon. In samples with boron concentrations of (220)×1015 cm3 the center is the most abundant among all defects detected by... (Read more)
- 317. Phys. Rev. B 69, 035210 (2004) , “Evolution of voids in Al+-implanted ZnO probed by a slow positron beam”, Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. OhdairaUndoped ZnO single crystals were implanted with aluminum ions up to a dose of 1015Al+/cm2. Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters,... (Read more)
- 318. Phys. Rev. Lett. 93, 055505 (2004) , “Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends”, F. Tuomisto, K. Pennanen, K. Saarinen, and J. SadowskiWe have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga1xMnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite... (Read more)
- 319. Phys. Rev. Lett. 93, 055504 (2004) , “Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells”, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergThe formation mechanism and properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation is investigated using density functional calculations. We find that boron traps an oxygen dimer to form a bistable defect with a donor level in... (Read more)
- 320. Phys. Rev. Lett. 92, 255504 (2004) , “Stable Fourfold Configurations for Small Vacancy Clusters in Silicon from ab initio Calculations”, D. V. Makhov and Laurent J. LewisUsing density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and pentavacancies in silicon. These new configurations consist of combinations of a ring hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain... (Read more)
- 321. Phys. Rev. Lett. 92, 047603 (2004) , “Probing the Wave Function of Shallow Li and Na Donors in ZnO Nanoparticles”, Serguei B. Orlinskii, Jan Schmidt, Pavel G. Baranov, Detlev M. Hofmann, Celso de Mello Donegá, and Andries MeijerinkElectron paramagnetic resonance and electron nuclear double resonance (ENDOR) experiments on ZnO nanoparticles reveal the presence of shallow donors related to interstitial Li and Na atoms. The shallow character of the wave function is evidenced by the multitude of 67Zn ENDOR lines and... (Read more)
- 322. Phys. Rev. Lett. 92, 047602 (2004) , “Overhauser Effect of 67Zn Nuclear Spins in ZnO via Cross Relaxation Induced by the Zero-Point Fluctuations of the Phonon Field”, Hubert Blok, Serguei B. Orlinski, Jan Schmidt, and Pavel G. BaranovHole burning in and displacements of the magnetic-resonance absorption line of the electron spin of the shallow hydrogen-related donor in ZnO are observed upon resonant irradiation with microwaves at 275 GHz and at 4.5 K in a magnetic field of 10 T. These effects arise from an almost complete... (Read more)
- 323. Phys. Rev. Lett. 92, 017402 (2004) , “Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes”, S. J. Sque, R. Jones, J. P. Goss, and P. R. BriddonThe utility of diamond as an electronic material is compromised by the lack of a suitable shallow donor. Here, ab initio theory is used to investigate the donor levels of substitutional pnictogen (N, P, As, and Sb) and chalcogen (S, Se, and Te) impurities and chalcogen-hydrogen defects in... (Read more)
- 324. Phys. Rev. Lett. 92, 015504 (2004) , “Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass”, Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo HosonoThe role of mobile interstitial oxygen atoms (O0) in defect processes in oxides is demonstrated by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass. Superstoichiometric O0 was created by F2 laser photolysis of the... (Read more)
- 325. phys. stat. sol. (b) 241, 3242 (2004) , WILEY-VCH , “Influence of P-T pre-treatment on thermopower of Czochralski-grown silicon at high pressure”, V.V. Shchennikov, S.V. Ovsyannikov, A. Misiuk, V.V. Shchennikov JrFor the first time the thermoelectric power of high-pressure phases of Czochralski-grown silicon (Cz-Si) single crystals has been investigated. From the dependence on pressure of the thermopower the phase transitions in Si have been established. The influence of gas pressure (up to 1.5 GPa) and... (Read more)
- 326. phys. stat. sol. (c) 1, 3110 (2004) , Wiley InterScience , “Raman spectra of lead chalcogenide single crystals”, S.V. Ovsyannikov, Y.S. Ponosov, V.V. Shchennikov, V.E. MogilenskikhRaman spectra of single crystals of lead chalcogenides (PbTe, PbSe, PbS) were studied at room temperature and ambient pressure. The structure of spectra for all compounds is rather similar showing the bands in one- and two-phonon range. Possible spectra identification is discussed. (© 2004... (Read more)
- 327. Physica B 344, 190 (2004) , Elsevier , “Thermomagnetic and thermoelectric properties of semiconductors (PbTe, PbSe) at ultrahigh pressures”, S.V. Ovsyannikov, V.V. ShchennikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (LNE, TNE) effects and the Maggi–Reghi–Leduc (MRL) effect were measured on PbTe and PbSe micro-samples at ultrahigh pressures upto 20 GPa. Values of the mobility of charge carriers as well as the scattering parameter were estimated both for the low- and high-pressure phase of PbTe and PbSe. At about 3 GPa, the maxima of both Nernst–Ettingshausen effects and magnetoresistance (MR) (and hence of the mobility of charge carriers μ), attributed to the gapless state of PbTe and PbSe were established. The TNE effect was found to be the largest among the effects measured, while the MRL was hardly visible even at the highest mobility values of the charge carriers. The possibilities for using thermomagnetic effects in micro-device technologies are discussed. (Read more)
- 328. Solid State Commun. 132, 333 (2004) , Pergamon Press , “Phase transitions investigation in ZnTe by thermoelectric power measurements at high pressure”, S.V. Ovsyannikov, V.V. ShchennikovThe pressure-induced phase transitions were studied in ZnTe by the thermoelectric power (S) technique. For the high-pressure trigonal phase P3121 cinnabar the large thermopower values S≈+400 correspond to semiconductor hole conductivity. During a transition into the orthorhombic structure Cmcm the value of S dropped by 40–50 times indicating metallic hole conductivity, like in the high pressure phases of other chalcogenides of II Group (HgSe, HgTe, CdTe) with Cmcm structure. In a transient region between the trigonal and orthorhombic phase (especially under decreasing pressure) a novel phase has been observed with a negative value of S. By analogy with other Zn and Cd chalcogenides whose NaCl phases have an electron type of conductivity the phase observed may have a NaCl structure. (Read more)
- 329. Appl. Phys. Lett. 83, 934-936 (2003) , “Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique”, Lin Shao, Xuemei Wang, Irene Rusakova, Hui Chen, and Jiarui LiuTrapping of migrating Si interstitials at substrate/epitaxial interfaces during high-energy Si ion bombardment has been observed. It shows that the interface of Si/Si layer, grown by molecular-beam epitaxy, is a strong sink for self-interstitials during MeV bombardment at room temperature. We... (Read more)
- 330. Appl. Phys. Lett. 83, 923-925 (2003) , “Interstitial H and H2 in SiC”, M. KaukonenThe properties of hydrogen in 3C and 4H type silicon carbide (SiC) are studied theoretically at the density functional level. We find that only singly positive or negative charge states of hydrogen are thermodynamically stable in SiC. The transition from the positive to the negative charge state... (Read more)
- 331. Appl. Phys. Lett. 83, 905-907 (2003) , “Investigation of boron diffusion in 6H-SiC”, Y. Gaop-type doping of 6H-SiC was implemented by diffusion of boron at temperatures higher than 1900 °C. The doping profiles were clearly divided into steep (zone I) and long-tail (zone II) regions. The boron diffusions in both regions are well fitted by erfc... (Read more)
- 332. Appl. Phys. Lett. 83, 665-667 (2003) , “Formation of BiOi, BiCs, and BiBsHi defects in e-irradiated or ion-implanted silicon containing boron”, J. Adey and R. JonesThe local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments... (Read more)
- 333. Appl. Phys. Lett. 83, 5407-5409 (2003) , “Clusters formation in ultralow-energy high-dose boron-implanted silicon”, F. Cristiano, X. Hebras, N. Cherkashin, and A. ClaverieThe formation and evolution of small cluster defects in 500 eV, 1×1015 cm2 boron-implanted silicon is investigated. These clusters are identified by high-resolution transmission electron microscopy (TEM) as small dislocation loops lying on {100} planes with an... (Read more)
- 334. Appl. Phys. Lett. 83, 4981-4983 (2003) , “Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons”, Hideharu Matsuura, Koichi Aso, Sou Kagamihara, Hirofumi Iwata, and Takuya IshidaFrom the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer, an Al acceptor with ~200 meV and an unknown defect with ~370 meV are found. By irradiation with 4.6 MeV electrons, the Al acceptor density is reduced, while the unknown defect density... (Read more)
- 335. Appl. Phys. Lett. 83, 4957-4959 (2003) , “Core structure and properties of partial dislocations in silicon carbide p-i-n diodes”, S. Ha, M. Benamara, and M. SkowronskiThe electroluminescence, mobility, and core nature of partial dislocations bounding stacking faults in 4H silicon carbide p-i-n diodes were investigated using optical emission microscopy and transmission electron microscopy (TEM). The stacking faults developed and expanded in... (Read more)
- 336. Appl. Phys. Lett. 83, 458-460 (2003) , “Irradiation-induced recovery of disorder in gallium nitride”, W. Jiang and W. J. WeberGallium nitride has been irradiated to two fluences with energetic Au2+ ions at 300 K. Two different damage levels and depth profiles were produced that are characterized by near-surface damage accumulation and deeper-regime damage saturation. Thermal annealing at 873 K resulted in... (Read more)
- 337. Appl. Phys. Lett. 83, 45-47 (2003) , “Visible luminescence of porous amorphous Si1–xCx:H due to selective dissolution of silicon”, K. RerbalRoom-temperature photoluminescence of porous hydrogenated amorphous silicon-carbon alloys (a-Si1xCx:H) has been studied for different carbon concentrations. Porous a-Si1xCx:H luminesces at energies much... (Read more)
- 338. Appl. Phys. Lett. 83, 437-439 (2003) , “Negative-U property of the oxygen vacancy defect in SiO2 and its implication for the E1[prime]" align="middle"> center in α-quartz”, D. J. ChadiThe +1 charged state of an oxygen vacancy V(O)+ in α-quartz is found to be unstable with respect to the reaction 2V(O)+V(O)0 + V(O)2+, which lowers the total energy by 2.9 eV, making it highly unlikely that... (Read more)
- 339. Appl. Phys. Lett. 83, 4354-4356 (2003) , “Native hole traps of ferromagnetic Ga1–xMnxAs layers on (100) GaAs substrates”, I. T. Yoon, C. J. Park, H. Y. Cho, and T. W. KangDominant hole traps of ferromagnetic Ga1xMnxAs and epilayers with an Mn mole fraction of x2.2% and 4.4% were identified employing deep-level transient spectroscopy. Three hole traps with binding energies of EA = 0.38±0.01 eV at... (Read more)
- 340. Appl. Phys. Lett. 83, 4333-4335 (2003) , “Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy”, F. Albrecht, G. Pasold, J. Grillenberger, N. Achtziger, and W. WitthuhnA deep energy level of bromine in the bandgap of GaAs was determined by means of Radiotracer deep-level transient spectroscopy (DLTS) measurements. For this purpose, the radioactive isotope 77Br was implanted in p-type as well as in n-type GaAs. In the course of repeated... (Read more)
- 341. Appl. Phys. Lett. 83, 4324-4326 (2003) , “Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering”, Peng Zhang, Hele Väinölä, Andrei A. Istratov, and Eicke R. WeberThe redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×1014 cm3 and an oxide precipitate density of 5×109 cm3. The concentrations of interstitial iron and... (Read more)
- 342. Appl. Phys. Lett. 83, 4193-4195 (2003) , “Intrinsic compensation of silicon-doped AlGaN”, M. C. WagenerThe silicon doping characteristics of AlxGa1xN were investigated over the x = 0.20.5 composition range. A combination of Hall and capacitancevoltage measurements indicated a significant deepening of the Si level, as well as a systematic... (Read more)
- 343. Appl. Phys. Lett. 83, 4169-4171 (2003) , “Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion”, Chung Foong Tan and Eng Fong ChorIt has been demonstrated that, by incorporating a thin ~20 nm Si1yCy (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated.... (Read more)
- 344. Appl. Phys. Lett. 83, 3710-3712 (2003) , “Metastability of two-hydrogen complexes in silicon”, D. J. ChadiA two-hydrogen interstitial complex (H2**" align="middle">) in crystalline Si that exhibits metastability is proposed via first-principles total energy calculations. In its most stable state, H2**" align="middle"> is 0.28 eV/H higher in energy than... (Read more)
- 345. Appl. Phys. Lett. 83, 3525-3527 (2003) , “On the nitrogen vacancy in GaN”, D. C. LookThe dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in n-type GaN, we argue that the 70 meV donor... (Read more)
- 346. Appl. Phys. Lett. 83, 3522-3524 (2003) , “Donor–donor binding in semiconductors: Engineering shallow donor levels for ZnTe”, A. Janotti, Su-Huai Wei, and S. B. ZhangIn the past, codoping by mixing donors with acceptors has been proposed to lower the dopant ionization energy. However, the level repulsion between donor and acceptor states is weak due to symmetry considerations. Here, we propose an innovative approach to lower the donor ionization energy by... (Read more)
- 347. Appl. Phys. Lett. 83, 3293-3295 (2003) , “Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN”, O. Gelhausen, H. N. Klein, and M. R. PhillipsThe effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following... (Read more)
- 348. Appl. Phys. Lett. 83, 3051-3053 (2003) , “Electronic structure of acceptor-donor complexes in silicon”, E. Atoro, Y. Ohama, and Y. HayafujiThe electronic structure of trimer acceptor-donor complexes in silicon Si clusters is studied using the ab initio discrete variational-Xα molecular-orbital (MO) method. The trimer complexes In2D (D = phosphorus P, arsenic As, antimony Sb, or bismuth Bi) consist of two... (Read more)
- 349. Appl. Phys. Lett. 83, 3042-3044 (2003) , “Role of boron for defect evolution in hydrogen-implanted silicon”, J. K. Lee, T. Höchbauer, R. D. Averitt, and M. NastasiThe mechanism underlying the exfoliation phenomenon in B+H coimplanted Si is presented. Compared with only H implantation, H-implanted Si samples that received a B preimplant were observed to have a decrease in implantation-induced lattice damage, in spite of enhanced blistering behavior, which was... (Read more)
- 350. Appl. Phys. Lett. 83, 287-289 (2003) , “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy”, J. F. Rommeluère, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. MarfaingThe electrical activity of nitrogen as an acceptor in ZnO has been investigated in two ways. First, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy (MOVPE) yielding incorporation of nitrogen in the range 10161021 ... (Read more)
- 351. Appl. Phys. Lett. 83, 2835-2837 (2003) , “Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy”, W. S. LauDefect state D (0.8 eV) was experimentally detected in Ta2O5 capacitors with ultrathin (physical thickness <10 nm) Ta2O5 films using zero-bias thermally stimulated current spectroscopy and correlated with leakage current. Defect state D can be more... (Read more)
- 352. Appl. Phys. Lett. 83, 2007-2009 (2003) , “Doping of chalcopyrites by hydrogen”, Çetin Klç and Alex ZungerFirst-principles total-energy calculations for hydrogen impurities in CuInSe2 (CIS) and CuGaSe2 (CGS) show that H+ takes up the CuSe bond center position, whereas H0 and H take up tetrahedral interstitial site next to In (in CIS) or... (Read more)
- 353. Appl. Phys. Lett. 83, 1947-1949 (2003) , “Blue photoluminescence of α-Ga2S3 and α-Ga2S3:Fe2+ single crystals”, Chang-Sun Yoonα-Ga2S3 and α-Ga2S3:Fe2+ single crystals were grown by the two-zone sublimation method. The optical energy gaps of α-Ga2S3 and α-Ga2S3:Fe2+ at 10 K were found to be... (Read more)
- 354. Appl. Phys. Lett. 83, 1385-1387 (2003) , “Hydrogen passivation of nitrogen in SiC”, A. Gali and P. DeákFirst-principles calculations carried out in 4H-SiC show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. The complex is very stable with respect to isolated positive donors and negatively charged hydrogen interstitials, so reactivation is... (Read more)
- 355. Appl. Phys. Lett. 83, 1325-1327 (2003) , “Aggregate nitrogen in synthetic diamond”, Karen M. McNamaraNitrogen is a commonly observed impurity in natural and synthetic diamond, yet there are still many questions in regard to its incorporation in the material. In all three common forms of diamond: natural, high-pressure high-temperature synthetic, and chemical vapor deposition (CVD) diamond; nitrogen... (Read more)
- 356. Appl. Phys. Lett. 82, 592-594 (2003) , “Shallow donor state of hydrogen in indium nitride”, E. A. DavisThe nature of the electron states associated with hydrogen in InN has been inferred by studying the behavior of positive muons, which mimic protons when implanted into semiconductors. The muons capture electrons below 60 K, forming paramagnetic centers with a binding energy of about 12 meV. Together... (Read more)
- 357. Appl. Phys. Lett. 82, 568-570 (2003) , “Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation”, V. V. Afanas'ev and A. StesmansAn analysis of fast and slow traps at the interface of 4HSiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects... (Read more)
- 358. Appl. Phys. Lett. 82, 565-567 (2003) , “Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces”, A. Lehner, F. Kohl, S. A. Franzke, T. Graf, M. S. Brandt, and M. StutzmannOrganic monolayers were prepared on hydrogen-terminated (111) silicon surfaces by thermally induced hydrosilylation with alkenes. The electronic properties of the modified surfaces were studied by photoconductivity and spin-dependent photoconductivity measurements (electrically detected magnetic... (Read more)
- 359. Appl. Phys. Lett. 82, 532-534 (2003) , “Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO”, T. Koida, S. F. Chichibu, and A. UedonoInfluences of point defects on the nonradiative processes in ZnO were studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement. Free excitonic PL intensity naturally increased with the increase in the... (Read more)
- 360. Appl. Phys. Lett. 82, 4157-4159 (2003) , “Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors”, H. D. Shih, M. A. Kinch, F. Aqariden, P. K. Liao, and H. F. SchaakeGold-doped Hg1xCdxTe samples of x = 0.2067 (in the very-long-wavelength infrared spectral band, with cutoff wavelengths ~13.2 µm at 77 K) were prepared by tellurium-melt liquid-phase epitaxy. The samples were doped with indium to... (Read more)
- 361. Appl. Phys. Lett. 82, 4074-4076 (2003) , “Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2”, A. Stesmans and V. V. Afanas'evElectron spin resonance analysis of (100)Si/HfO2 interfaces prepared by chemical vapor deposition of the oxide using three chemically different precursors reveals that the trivalent Si defects common for Si/SiO2 interfacesPb0 and Pb1... (Read more)
- 362. Appl. Phys. Lett. 82, 40-42 (2003) , “Observation of defect complexes containing Ga vacancies in GaAsN”, J. Toivonen, T. Hakkarainen, M. Sopanen, and H. LipsanenPositron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm3 with increasing N composition and decreases... (Read more)
- 363. Appl. Phys. Lett. 82, 3865-3867 (2003) , “Electrically active defects in silicon produced by ion channeling”, H. Kortegaard NielsenLow-dose implantations with 65 Si and 150 keV Ge ions into the n+ top layer of Si n+p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transient spectroscopy. Results were compared to crystal-TRIM... (Read more)
- 364. Appl. Phys. Lett. 82, 3671-3673 (2003) , “Deep level defect in Si-implanted GaN n+-p junction”, X. D. Chen, Y. Huang, S. Fung, C. D. Beling, and C. C. LingA deep level transient spectroscopy (DLTS) study has been performed on a GaN n+-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect has been revealed within the interfacial region of the junctions by... (Read more)
- 365. Appl. Phys. Lett. 82, 3469-3471 (2003) , “Fluorine-enhanced boron diffusion in amorphous silicon”, J. M. Jacques, L. S. Robertson, and K. S. JonesSilicon wafers were preamorphized with 70 keV Si+ at a dose of 1×1015 atoms/cm2, generating a deep amorphous layer of 1800 Å. Implants of 500 eV 11B+, with and without 6 keV F+, followed at doses of 1×1015... (Read more)
- 366. Appl. Phys. Lett. 82, 3457-3459 (2003) , “Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN”, R. Armitage, William Hong, Qing Yang, H. Feick, J. Gebauer, and E. R. WeberCarbon-doped GaN layers grown by molecular-beam epitaxy are studied with photoluminescence and positron annihilation spectroscopy. Semi-insulating layers doped with >1018 cm3 carbon show a strong luminescence band centered at ~2.2 eV (yellow luminescence). The... (Read more)
- 367. Appl. Phys. Lett. 82, 3448-3450 (2003) , “Optical properties of the isoelectronic trap Hg in ZnO”, Th. Agne, M. Dietrich, J. Hamann, S. Lany, H. Wolf, and Th. WichertNominally undoped ZnO crystals were doped with Hg by implanting radioactive 197Hg/197Au atoms. After annealing at 1073 K, the photoluminescence (PL) spectra recorded at 1.6 K exhibit a Hg related band in the region between 3.28 and 2.85 eV. The sharp no-phonon line, which is... (Read more)
- 368. Appl. Phys. Lett. 82, 3433-3435 (2003) , “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy”, J. Oila, J. Kivioja, V. Ranki, and K. SaarinenPositron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 1019 to below 1016 cm3, as the... (Read more)
- 369. Appl. Phys. Lett. 82, 3260-3262 (2003) , “Optically induced formation of the hydrogen complex responsible for the 4B0 luminescence in 4H-SiC”, Yaroslav KoshkaFormation of a boron-related defect responsible for the 4B0 emission line in the low-temperature photoluminescence spectrum of 4H SiC has been investigated. The 4B0 luminescence was absent in as-grown epitaxial layers. This line appeared after hydrogenation along with other... (Read more)
- 370. Appl. Phys. Lett. 82, 3002-3004 (2003) , “Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN”, Qing Yang, Henning Feick, and Eicke R. WeberExcitonic luminescence of GaN after irradiation with 0.42-MeV electrons has been investigated in detail. The low-energy irradiation generates damage exclusively in the N sublattice. Additional bound-exciton lines are found and are shown to arise from a hydrogenic donor with a binding energy... (Read more)
- 371. Appl. Phys. Lett. 82, 2987-2989 (2003) , “Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon”, D. H. Macdonald, H. Maeckel, S. Doshi, W. Brendle, and A. CuevasCarrier lifetime measurements have been used to characterize residual defects after low-energy implanting of silicon ions followed by high-temperature annealing (900 or 1000 °C). The implant was found to result in two distinct regions of lifetime-reducing damage. First, a high recombination... (Read more)
- 372. Appl. Phys. Lett. 82, 296-298 (2003) , “Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes”, H. Ohyama, K. Takakura, and K. HayamaThe impact of high-temperature neutron, electron, and γ-irradiations on the dark current of silicon pin junctions is described in terms of a damage coefficient KI. It is shown that this KI is thermally activated and reduces... (Read more)
- 373. Appl. Phys. Lett. 82, 2835-2837 (2003) , “Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) analysis reveals that the versatile noncontacting corona biasing method frequently applied in the electrical analysis of Si/SiO2-based structures is not a noninvasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of... (Read more)
- 374. Appl. Phys. Lett. 82, 2652-2654 (2003) , “Vacancy–oxygen complex in Si1–xGex crystals”, V. P. Markevich and A. R. PeakerElectronic properties of the vacancyoxygen complex in unstrained Si1xGex crystals (0<x0.055) grown by the Czochralski method were studied by means of capacitance transient techniques. The enthalpy of electron ionization for the single... (Read more)
- 375. Appl. Phys. Lett. 82, 2263-2265 (2003) , “Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy”, A. Krtschil, A. Dadgar, and A. KrostThe electrical charge state of threading dislocations in differently doped GaN is investigated by scanning surface potential microscopy in conjunction with tapping mode atomic force microscopy. The dislocations are found to be either negatively charged or neutral depending on the type of doping... (Read more)
- 376. Appl. Phys. Lett. 82, 2254-2256 (2003) , “Phosphorus and boron diffusion in silicon under equilibrium conditions”, J. S. Christensen and H. H. RadamsonThe intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 °C) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74±0.07 eV and a... (Read more)
- 377. Appl. Phys. Lett. 82, 2169-2171 (2003) , “Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for "type inversion"”, I. PintilieRadiation-induced defects in silicon diodes were investigated after exposure to high doses of Co60-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in... (Read more)
- 378. Appl. Phys. Lett. 82, 2094-2096 (2003) , “Comparison of oxygen-chain models for late thermal double donors in silicon”, Y. J. Lee, J. von Boehm, M. Pesola, and R. M. NieminenThe electronic and atomic structures of the oxygen chains assigned to late thermal double donors (TDDs) in silicon are studied using accurate total-energy calculations. We find that the ring-type O-chain model is best suited for TDDs and better than the di-Y-lid-type O-chain model. The ring-type O... (Read more)
- 379. Appl. Phys. Lett. 82, 2082-2084 (2003) , “Effect of Be+ + O+ coimplantation on Be acceptors in GaN”, Yoshitaka Nakano and Tetsu KachiP-type regions were produced in undoped GaN films by Be+ and Be+ + O+ implantation and subsequent annealing at temperatures between 1000 and 1050 °C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level was... (Read more)
- 380. Appl. Phys. Lett. 82, 2074-2076 (2003) , “Cathodoluminescence and Hall-effect measurements in sulfur-doped chemical-vapor-deposited diamond”, Kazushi Nakazawa, Minoru Tachiki, and Hiroshi KawaradaDominant n-type conductivity in sulfur-doped chemical-vapor-deposited diamond is observed by Hall-effect measurement. The activation energy is estimated at 0.50.75 eV above 600 K. Below 600 K, the carrier concentration deviates from the activation energy, and Hall mobility decreases in... (Read more)
- 381. Appl. Phys. Lett. 82, 2059-2061 (2003) , “Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy”, J. Gebauer and E. R. WeberWe identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (TeAs), Ga vacancies (VGa), and Ga vacancydonor complexes... (Read more)
- 382. Appl. Phys. Lett. 82, 2020-2022 (2003) , “Observation of interface defects in thermally oxidized SiC using positron annihilation”, James Dekker and Kimmo SaarinenPositron annihilation has been applied to study thermally oxidized 4H- and 6H-SiC. The SiC/SiO2 interface is found to contain a high density of open-volume defects. The positron trapping at the interface defects correlates with the charge of the interface determined by... (Read more)
- 383. Appl. Phys. Lett. 82, 1556-1558 (2003) , “Identification of implantation-induced defects in GaN: A near-edge x-ray absorption fine structure study”, M. Katsikini, F. Pinakidou, and E. C. PalouraWe apply near-edge x-ray absorption fine structure spectroscopy, at the N K edge, in order to identify the signature of implantation-induced defects in the partial density of empty states in GaN implanted with O, Mg, and Si ions. The dose range was 10141018... (Read more)
- 384. Appl. Phys. Lett. 82, 1066-1068 (2003) , “Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy”, In Sang Jeon, Jaehoo Park, Dail Eom, Cheol Seong Hwang, and Hyeong Joon KimThe minority carrier (electron) capture process and the interface trap density of a TiN/Al2O3/p-Si metaloxidesemiconductor capacitor were examined by deep level transient spectroscopy (DLTS). It was found that the activation energies of the large peaks... (Read more)
- 385. Appl. Phys. Lett. 82, 1021-1023 (2003) , “Ga vacancies and grain boundaries in GaN”, J. Oila and K. SaarinenWe have applied a low-energy positron beam to study epitaxial Si-doped GaN layers, where the grain size varies from 0.2 to 25 µm. Negatively charged Ga vacancies are found in n-type samples. Their concentration is independent of the grain size, suggesting that Ga vacancies exist... (Read more)
- 386. J. Appl. Phys. 94, 7567 (2003) , “Electron paramagnetic resonance of Cr2+ and Cr4+ ions in CdGeAs2 crystals”, N. Y. Garces, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate chromium ions in single crystals of CdGeAs2 grown by the horizontal gradient freeze technique. Signals from Cr2+ and Cr4+ ions were observed near 12 K. The Cr2+ ions have the... (Read more)
- 387. J. Appl. Phys. 94, 7470 (2003) , “Defect assessment of Mg-doped GaN by beam injection techniques”, C. Díaz-Guerra and J. PiquerasThe electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous... (Read more)
- 388. J. Appl. Phys. 94, 7112 (2003) , “Dynamic annealing in ion implanted SiC: Flux versus temperature dependence”, A. Yu. KuznetsovA strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes... (Read more)
- 389. J. Appl. Phys. 94, 6456 (2003) , “Production and thermal decay of radiation-induced point defects in KD2PO4 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonOptical absorption and electron paramagnetic resonance (EPR) techniques have been used to characterize the production and thermal decay of point defects in undoped single crystals of KD2PO4 grown at Lawrence Livermore National Laboratory. A crystal was irradiated at 77 K with x... (Read more)
- 390. J. Appl. Phys. 94, 5617 (2003) , “Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation”, M. D. Chun, D. Kim, and J. Y. HuhA comparative study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) Si wafers, which differed mainly in interstitial oxygen concentration, upon 3 MeV proton irradiation with fluences of up to 2×1015... (Read more)
- 391. J. Appl. Phys. 94, 5399 (2003) , “Optical properties of GaSe grown with an excess and a lack of Ga atoms”, S. ShigetomiMeasurements of the photoluminescence (PL) and photocurrent (PC) have been made on GaSe with excess Ga or Se atoms. The 1.77 eV emission band for the sample with excess Ga atoms is attributed to the transition from the donor level at 0.175 eV to the acceptor level at 0.152 eV. This donor level is... (Read more)
- 392. J. Appl. Phys. 94, 5297 (2003) , “Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors”, A. CavalliniThe features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaAs/GaAs heterostructure field-effect transistors both through experiments and two-dimensional numerical device simulations. Differently from electron traps located in the n-type semiconductor... (Read more)
- 393. J. Appl. Phys. 94, 4807 (2003) , “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements”, Z. Q. Chen, S. Yamamoto, M. Maekawa, and A. KawasusoDefects in hydrothermal grown ZnO single crystals are studied as a function of annealing temperature using positron annihilation, x-ray diffraction, Rutherford backscattering, Hall, and cathodoluminescence measurements. Positron lifetime measurements reveal the existence of Zn vacancy related... (Read more)
- 394. J. Appl. Phys. 94, 4363 (2003) , “Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon”, C. A. Londos and M. S. PotsidiCzochralski-grown silicon samples subjected to high temperaturehigh pressure (HTHP) treatments in the range of 900 °C were irradiated with fast neutrons. Transmission electron microscopy measurements revealed the presence of oxygen precipitates (SiOx) and dislocation... (Read more)
- 395. J. Appl. Phys. 94, 400 (2003) , “Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen plasma treatment on high-quality bulk n-ZnO crystals were studied. It is shown that after plasma exposure at 200 °C for 0.5 h the hydrogen penetrates into the material down to about 20 µm and shows concentrations close to 1017 cm3... (Read more)
- 396. J. Appl. Phys. 94, 3960 (2003) , “Hydrogen plasma passivation effects on properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen on the electrical and optical properties of p-GaN were investigated. Hydrogen is readily incorporated into the material at temperatures of 250350 °C, which is consistent with the low activation energy for diffusion reported by Seager et al. [J. Appl. Phys.... (Read more)
- 397. J. Appl. Phys. 94, 3923 (2003) , “Electrically active sulfur-defect complexes in sulfur implanted diamond”, R. Kalish and C. Uzan-SaguySingle crystal type IIa 100 diamonds were implanted with sulfur, phosphorus, and argon ions under different implantation and annealing conditions. Shallow (sub-MeV) as well as deep (MeV) implantations into samples held at low (liquid nitrogen) ambient (room temperature) and high (400 °C)... (Read more)
- 398. J. Appl. Phys. 94, 3796 (2003) , “Electron paramagnetic resonance characterization of impurity Gd3+ ions in a PbWO4 single crystal”, T. H. Yeom and S. H. LeeLead tungstate single crystals doped with Gd2O3 were grown by the Czochralski method in Ar atmosphere. The electron paramagnetic resonance of the Gd3+ ion in a PbWO4 single crystal has been investigated at 9.4 GHz. The spectroscopic splitting tensor... (Read more)
- 399. J. Appl. Phys. 94, 3233 (2003) , “Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy”, Y. Nakakura, M. Kato, M. Ichimura, and E. AraiAn optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize defects in epitaxial 6H-SiC. The O-CTS measurements enable us to estimate the optical ionization energy and the optical cross section of these defects. By the deep level transient spectroscopy (DLTS), three... (Read more)
- 400. J. Appl. Phys. 94, 3075 (2003) , “Evolution of photoluminescent defect clusters in proton- and copper-implanted silicon crystals during annealing”, Minoru Nakamura and Susumu MurakamiEvolution of intrinsic defects (interstitials or vacancies) formed by implanting with protons and copper ions in silicon crystals and then annealing the crystals at temperatures from 100 to 800 °C was investigated by photoluminescence (PL) measurements. For samples annealed below 400 °C,... (Read more)
- 401. J. Appl. Phys. 94, 3069 (2003) , “Proton implantation effects on electrical and luminescent properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe electrical properties, deep level spectra, and microcathodoluminescence (MCL) spectra of p-GaN films implanted with 100 keV protons are reported. Measurable decreases of the MCL intensity began for doses as low as 1012 cm2, while measurable decreases of the... (Read more)
- 402. J. Appl. Phys. 94, 301 (2003) , “Thermally stimulated luminescence from vapor-transport-equilibrated LiTaO3 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonThermally stimulated luminescence (TSL), optical absorption, and electron paramagnetic resonance (EPR) have been used to characterize the emission of ultraviolet light from undoped LiTaO3. The crystals in this study were grown from a congruent melt and then subjected to a... (Read more)
- 403. J. Appl. Phys. 94, 3004 (2003) , “Deep level transient spectroscopic study of neutron-irradiated n-type 6H–SiC”, X. D. Chen, S. Fung, C. C. Ling, and C. D. BelingDeep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6HSiC after neutron irradiation. Deep levels situated at EC0.23, EC0.36/0.44, EC0.50, and... (Read more)
- 404. J. Appl. Phys. 94, 2992 (2003) , “Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers”, M. Lazar, C. Raynaud, D. Planson, and J.-P. ChanteEpilayers of 6H and 4HSiC were Al implanted with various doses to form p-type layers after a postimplantation annealing performed at 1700 °C/30 min. Rutherford backscattering spectrometry in the channeling mode analyses carried out before and after annealing show virgin nonimplanted... (Read more)
- 405. J. Appl. Phys. 94, 2901 (2003) , “The 3838 Å photoluminescence line in 4H-SiC”, A. HenryWe report the results of a study of the origins of the peak near 3838 Å observed in the photoluminescence (PL) spectrum of 4H-SiC. For n+-doped 4H-SiC material, it appears as a broad peak that is shown to be related to high-level nitrogen doping, with an energy position... (Read more)
- 406. J. Appl. Phys. 94, 2895 (2003) , “Proton implantation effects on electrical and recombination properties of undoped ZnO”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, and V. I. VdovinElectrical and optical properties of undoped n-ZnO crystals implanted with 50 keV protons with doses from 5×1013 to 5×1015 cm2 are reported. Proton implantation leads to a decrease of the carrier concentration in the near-surface region, but... (Read more)
- 407. J. Appl. Phys. 94, 2888 (2003) , “Quantitative comparisons of dissolved hydrogen density and the electrical and optical properties of ZnO”, C. H. Seager and S. M. MyersRecent density functional theory calculations indicate that hydrogen is soluble in ZnO, effectively forming a shallow donor state. It has been suggested that these donors are responsible for the large increases in electron concentration seen in ZnO samples annealed at elevated temperatures in... (Read more)
- 408. J. Appl. Phys. 94, 2510 (2003) , “Electron paramagnetic resonance study of electron and hole traps in β-BaB2O4 crystals”, Wei Hong and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate point defects in single crystals of β-BaB2O4 (commonly referred to as BBO). An irradiation with x rays at 77 K produces two dominant EPR spectra, one electronlike and the other holelike. The... (Read more)
- 409. J. Appl. Phys. 94, 2234 (2003) , “Occupation probability for acceptor in Al-implanted p-type 4H–SiC”, Hideharu Matsuura, Koichi Sugiyama, Kazuhiro Nishikawa, Takashi Nagata, and Nobuya FukunagaAl-implanted p-type 4HSiC layers with different implantation and annealing temperatures are formed, and the temperature dependence of the hole concentration p(T) is obtained by Hall-effect measurements. The Al acceptor level in SiC is deep (~180 meV), and its first excited... (Read more)
- 410. J. Appl. Phys. 94, 1965 (2003) , “Magnetic resonance investigation of Mn2+ in ZnO nanocrystals”, Huijuan Zhou, Detlev M. Hofmann, Albrecht Hofstaetter, and Bruno K. MeyerElectron paramagnetic resonance measurements were carried out to probe the structure of Mn2+ in ZnO nanocrystals with different surface conditions, modified by an annealing process. Changes in the spectra by the annealing treatment indicate the existence of three Mn2+ centers.... (Read more)
- 411. J. Appl. Phys. 94, 1647 (2003) , “Defect characterization of ZnBeSe solid solutions by means of positron annihilation and photoluminescence techniques”, F. Plazaola, J. Flyktman, and K. SaarinenDefect characterization of as-grown Zn1xBexSe compound semiconductors was studied by positron lifetime and photoluminescence measurements. We obtain both experimental and theoretical evidence that the bulk lifetime of free positrons decreases linearly with... (Read more)
- 412. J. Appl. Phys. 94, 1485 (2003) , “Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN”, H. K. Cho, C. S. Kim, and C.-H. HongIn n-type GaN films grown on sapphire substrates by metal-organic chemical vapor deposition such as unintentionally GaN and intentionally Si-doped GaN and In-doped GaN, the electron capture behaviors were investigated by deep level transient spectroscopy with various filling pulse durations.... (Read more)
- 413. J. Appl. Phys. 94, 140 (2003) , “Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon”, Jinggang Lu, Magnus Wagener, and George RozgonyiThe effects of grain boundaries (GB) in polycrystalline sheet silicon on impurity gettering and oxygen precipitation were investigated by electron beam induced current (EBIC), deep level transient spectroscopy (DLTS), micro-Fourier-transform infrared spectroscopy (FTIR), and preferential... (Read more)
- 414. J. Appl. Phys. 93, 9659 (2003) , “Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors”, V. Eremin, D. S. Poloskin, E. Verbitskaya, M. P. Vlasenko, and L. S. VlasenkoSpin-dependent recombination (SDR) electron paramagnetic resonance (EPR) spectroscopy is applied for investigation of paramagnetic recombination centers in irradiated silicon pn junction detectors (diodes) formed on float-zone (FZ) silicon wafers. The main radiation defects,... (Read more)
- 415. J. Appl. Phys. 93, 9395 (2003) , “Dislocation loop evolution in ion implanted 4H–SiC”, P. O. Å. Persson and L. Hultman4HSiC epilayers were implanted with 27Al in doses from 1.3×1014 cm2 to 7.8×1014 cm2. Dislocation loop formation after high-temperature annealing was studied by plan-view transmission electron microscopy and... (Read more)
- 416. J. Appl. Phys. 93, 930 (2003) , “Effects of annealing ambient on the formation of compensation defects in InP”, A. H. DengPositron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The... (Read more)
- 417. J. Appl. Phys. 93, 9104 (2003) , “Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy”, Sung-Yong Chung, Niu Jin, Anthony T. Rice, and Paul R. BergerDeep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n+-p junctions... (Read more)
- 418. J. Appl. Phys. 93, 8995 (2003) , “Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals”, T. Monteiro, C. Boemare, and M. J. SoaresWe report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the... (Read more)
- 419. J. Appl. Phys. 93, 8975 (2003) , “Infrared absorption bands associated with native defects in ZnGeP2”, N. C. Giles, Lihua Bai, M. M. Chirila, N. Y. Garces, and K. T. StevensAn optical absorption investigation from 10 to 296 K has been performed on bulk crystals of ZnGeP2 grown by the horizontal-gradient-freeze method. We identify three broad absorption bands in the spectral range from 1 to 4 µm that are due to native defects. At low temperature, a band... (Read more)
- 420. J. Appl. Phys. 93, 8926 (2003) , “Behavior of oxidation-induced stacking faults in annealed Czochralski silicon doped by nitrogen”, Deren Yang, Jia Chu, Jin Xu, and Duanlin QueAfter oxidation at 1150 °C, oxidation-induced stacking faults (OSFs) in nitrogen-doped Czochralski crystal silicon (NCZSi) preannealed at 750 °C for 16 h followed by annealing at 1100 °C were investigated. It was observed that the size of OSFs in NCZSi samples was larger than... (Read more)
- 421. J. Appl. Phys. 93, 753 (2003) , “Formation and passivation kinetics of gold-hydrogen complexes in n-type silicon”, A. ZamoucheReverse- and zero-bias annealing kinetics of Au-related deep levels in Au diffused P-doped silicon hydrogenated by wet chemical etching, have been determined. The dynamic behavior of these deep levels can enable an estimation of the number of hydrogen atoms in the defects. Differences in the dynamic... (Read more)
- 422. J. Appl. Phys. 93, 6095 (2003) , “Nitrogen-related electron traps in Ga(As,N) layers (3% N)”, P. KrispinCapacitance spectroscopy is used to examine the compositional dependence of deep levels in Si-doped Ga(As,N) layers grown on GaAs. We find two predominant electron traps at about 0.80 and 1.1 eV above the valence band edge EV, which do not depend on composition. For N... (Read more)
- 423. J. Appl. Phys. 93, 6056 (2003) , “Light-induced defects in KTaO3”, V. V. Laguta, M. D. Glinchuk, and I. P. BykovPhotoconductivity (PC), thermally stimulated conductivity (TSC), photoluminescence (PL), thermoluminescence (TL), and electron spin resonance (ESR) measurements have been made on single crystals of potassium tantalate over the temperature range 4.2290 K. We revealed two sorts of... (Read more)
- 424. J. Appl. Phys. 93, 5905 (2003) , “Effects of ion implantation on electron centers in hydrogenated amorphous carbon films”, A. A. Konchits, M. Ya. Valakh, B. D. Shanina, S. P. Kolesnik, and I. B. YanchukElectron spin resonance (ESR) and Raman spectra measurements are carried out on a-C:H and a-C:H:N films both as grown and implanted with W and Ni ions with doses ranged from 0.5×1015 to 1.2×1016 cm2. The as-grown films have small... (Read more)
- 425. J. Appl. Phys. 93, 5388 (2003) , “Electrical and optical properties of Cr and Fe implanted n-GaN”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. V. Pashkova, and A. A. ShlenskyDeep levels introduced into n-GaN films by Fe and Cr implantation have been studied by means of optical absorption and microcathodoluminescence spectroscopy measurements and by deep level transient spectroscopy, admittance spectroscopy, and capacitance-voltage profiling. The results are... (Read more)
- 426. J. Appl. Phys. 93, 5302 (2003) , “Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy”, Tooru Tanaka, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, and Hiroshi OgawaPhotoluminescence (PL) properties of I-doped ZnTe homoepitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy have been investigated as a function of n-butyliodide (n-BuI) transport rate. The PL spectrum changed drastically even when a low dopant transport rate... (Read more)
- 427. J. Appl. Phys. 93, 5140 (2003) , “GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation”, I. Usov and N. ParikhGaN films were implanted with 150 keV Ar+ at temperatures up to 1100 °C to a dose of 3×1015 cm2. Concentration profiles of Ar were measured by secondary ion mass spectroscopy and depth distributions of ion-induced damage were estimated from Rutherford... (Read more)
- 428. J. Appl. Phys. 93, 5118 (2003) , “High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon”, N. Abdelgader and J. H. Evans-FreemanA combination of high resolution Laplace deep level transient spectroscopy (LDLTS) and direct capture cross-section measurements has been used to investigate whether deep electronic states related to interstitial-type defects introduced by ion implantation originated from point or extended defects,... (Read more)
- 429. J. Appl. Phys. 93, 4708 (2003) , “Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactor”, J. Zhang, L. Storasta, J. P. Bergman, N. T. Son, and E. JanzénWe have studied intrinsic and impurity related defects in silicon carbide (SiC) epilayers grown with fast epitaxy using chemical vapor deposition in a vertical hot-wall reactor. Using capacitance transient techniques, we have detected low concentrations of electron traps (denoted as Z1/2,... (Read more)
- 430. J. Appl. Phys. 93, 4590 (2003) , “Diffusion of deuterium (hydrogen) in previously hydrogenated (deuterated) III–V semiconductors”, Bertr, Theys, and François JomardHydrogenated (deuterated) C-doped GaAs and Zn-doped InP layers have been exposed to a deuterium (hydrogen) plasma. Diffusion profiles have been measured by secondary ion mass spectroscopy and compared to those obtained after exposure of as-grown (without any previous plasma treatment) samples in... (Read more)
- 431. J. Appl. Phys. 93, 4331 (2003) , “Pb-type interface defects in (100)Si/SiO2 structures grown in ozonated water solution”, D. Pierreux and A. StesmansSi dangling bond interface defects (Pb0,Pb1) were probed by electron spin resonance in entities of (100)Si with ultrathin SiO2 grown in ozonated de-ionized water solution at room temperature. After photodesorption of passivating hydrogen,... (Read more)
- 432. J. Appl. Phys. 93, 4097 (2003) , “Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO”, Jiaping HanThe dielectric properties of Mn-doped ZnO ceramics with electrically active grain boundaries at low temperatures of 1070 K were investigated by admittance spectroscopy. It was observed that the dielectric relaxation of the main shallow donors, zinc interstitial, in these samples occurred in... (Read more)
- 433. J. Appl. Phys. 93, 3971 (2003) , “Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing”, P. K. HurleyIn this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 °C is presented. From a combined analysis using electron spin resonance and quasistatic capacitancevoltage characterization, the... (Read more)
- 434. J. Appl. Phys. 93, 3674 (2003) , “Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions”, Tomonori Takahashi, Shigeto Fukatsu, and Kohei M. ItohSelf-diffusion coefficients of Si in thermally grown SiO2 on a semiconductor-grade silicon wafer have been determined at temperatures between 1150 and 1300 °C under equilibrium conditions using isotope heterostructures (natSiO2/28SiO2). Si... (Read more)
- 435. J. Appl. Phys. 93, 3635 (2003) , “Effects of oxygen contamination on diffusion length in p+–n GaInNAs solar cells”, A. Balcioglu, R. K. Ahrenkiel, and D. J. FriedmanWe have studied deep level impurities in p+n GaInNAs solar cells using secondary ion mass spectroscopy (SIMS), capacitancevoltage (CV), and deep-level transient spectroscopy (DLTS). These films were grown by atmospheric and low-pressure... (Read more)
- 436. J. Appl. Phys. 93, 3315 (2003) , “Electron paramagnetic resonance characterization of Cr3+ impurities in a β-Ga2O3 single crystal”, T. H. Yeom, I. G. Kim, and S. H. Leeβ-Ga2O3 single crystals doped with the Cr3+ ion were grown in an O2 atmosphere using the floating zone method. Electron paramagnetic resonance (EPR) spectra of the Cr3+ ion were recorded with an X band EPR spectrometer at 20 °C.... (Read more)
- 437. J. Appl. Phys. 93, 3234 (2003) , “Characterization of deep level traps responsible for isolation of proton implanted GaAs”, H. Boudinov and A. V. P. CoelhoDeep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects... (Read more)
- 438. J. Appl. Phys. 93, 3228 (2003) , “Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams”, Akira Uedono, Toshiki Mori, Kunitomo Morisawa, and Kouichi MurakamiHydrogen-terminated vacancies in Si+-implanted Si were studied by means of positron annihilation. After the Si+-ion implantation, hydrogen atoms were introduced into the damaged region using a hydrogen plasma [hydrogen-atom treatment (HAT)]. Monoenergetic positron beams were... (Read more)
- 439. J. Appl. Phys. 93, 3117 (2003) , “Beryllium implantation induced deep level defects in p-type 6H–silicon carbide”, X. D. Chen, C. C. Ling, S. Fung, and C. D. BelingBeryllium implantation into p-type 6HSiC and subsequent thermal annealing have been performed. The deep level defects induced by this beryllium-implantation process have been investigated using deep level transient spectroscopy. Four deep levels labeled BEP1, BEP2, BEP3, and BEP4 were... (Read more)
- 440. J. Appl. Phys. 93, 2719 (2003) , “Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC”, K. McDonald, R. A. Weller, S. T. Pantelides, and L. C. FeldmanThe relationship between nitrogen content and interface trap density (Dit) in SiO2/4HSiC near the conduction band has been quantitatively determined. Nitridation using NO significantly reduces Dit near the conduction band, but the effect saturates... (Read more)
- 441. J. Appl. Phys. 93, 2481 (2003) , “Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam”, A. UedonoZinc oxide (ZnO) thin films grown on ScAlMgO4 substrates were characterized by means of positron annihilation. We measured Doppler broadening spectra of annihilation radiation and photoluminescence spectra for the ZnO films deposited by laser molecular-beam epitaxy and single-crystal ZnO.... (Read more)
- 442. J. Appl. Phys. 93, 2449 (2003) , “Defect evolution of low energy, amorphizing germanium implants in silicon”, A. C. King, A. F. Gutierrez, A. F. Saavedra, and K. S. JonesThe defect evolution upon annealing of low energy, amorphizing germanium implants into silicon was studied using plan-view transmission electron microscopy. Implants with energies of 530 keV at an amorphizing dose of 1×1015 Ge + cm2 were annealed... (Read more)
- 443. J. Appl. Phys. 93, 231 (2003) , “Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation”, E. Oliviero, M. F. Beaufort, and J. F. BarbotThermal helium desorption spectrometry was used to characterized helium implantation-induced defects in SiC. 6HSiC, 4HSiC, and βSiC samples were implanted with helium at energies ranging from 100 to 3 keV and doses ranging from 1×1013 to... (Read more)
- 444. J. Appl. Phys. 93, 2301 (2003) , “Electrical and optical properties of n- and p-InSe doped with Sn and As”, S. ShigetomiThe impurity levels in Sn- and As-doped InSe have been investigated by photoluminescence (PL), photoacoustic (PA), and Hall effect measurements. The carrier transport in the Sn-doped n-type sample is governed by the donor level at 0.06 eV below the conduction band. Moreover, this donor level... (Read more)
- 445. J. Appl. Phys. 93, 2289 (2003) , “Erbium-related band gap states in 4H– and 6H–silicon carbide”, G. Pasold, F. Albrecht, J. Grillenberger, U. Grossner, C. Hülsen, and W. WitthuhnThe band gap states of erbium (Er) in 4H and 6Hsilicon carbide (SiC) were investigated by means of deep level transient spectroscopy (DLTS). The samples were doped with Er by ion implantation followed by thermal annealing procedures. The DLTS measurements with the stable 167Er... (Read more)
- 446. J. Appl. Phys. 93, 143 (2003) , “Platinum-related defects in silicon observed by optical absorption measurements”, N. Fukata, M. Suezawa, and K. SaitoWe investigated platinum (Pt)-related defects in silicon (Si) based on the measurement of their optical absorption and found optical absorption peaks related to Pt clusters. Pt and H were separately doped in FZSi by heating at 10001300 °C followed by quenching in water. Optical... (Read more)
- 447. J. Appl. Phys. 93, 1428 (2003) , “Indium segregation to dislocation loops induced by ion implantation damage in silicon”, Taiji NodaIndium segregation to dislocation loops and indium co-diffusion were investigated using secondary ion mass spectrometry (SIMS) and a physically-based diffusion model. High doses of As (30 keV, 1×1015 cm2) and B (5 keV, 1×1015 cm2) were... (Read more)
- 448. J. Appl. Phys. 93, 1069 (2003) , “Influence of contamination on the dislocation-related deep level C1 line observed in deep-level-transient spectroscopy of n-type silicon: A comparison with the technique of electron-beam-induced current”, Klaus Knobloch, Martin Kittler, and Winfried SeifertMisfit dislocations containing different amounts of contamination were analyzed by deep-level-transient spectroscopy (DLTS). The amount of dislocation contamination was determined from the temperature dependence of the dislocation contrast, c(T), measured by electron-beam-induced... (Read more)
- 449. J. Appl. Phys. 93, 10110 (2003) , “Silicon nanocrystals and defects produced by silicon and silicon-and-gold implantation in silica”, C. BarthouHigh-purity silica samples were implanted at room temperature with 2-MeV Si ions or sequentially with 2-MeV Si and 10-MeV Au ions. Three photoluminescence bands associated with the presence of defects are identified in the as-implanted samples. After a heat treatment at 1100 °C, a line appears... (Read more)
- 450. Solid State Commun. 126, 373 (2003) , Pergamon Press , “Thermoelectric power, magnetoresistance of lead chalcogenides in the region of phase transitions under pressure”, V.V. Shchennikov, S.V. OvsyannikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (N–E) effects were measured at ultrahigh pressure up to 20 GPa under closure of semiconductor gap at NaCl- and GeS-type phases of n-PbTe, p-PbSe and p-PbS. Near~3 GPa, the maxima of N–E effects and magnetoresistance (and hence of mobility of charge carriers) attributed to gapless state for PbTe and PbSe were established. The reversible sign inversion of transverse N–E effect indicating the change in scattering mechanism of charge carries have been revealed at high pressure phase of PbSe. The lowering of thermomagnetic effects with pressure gave the evidence of indirect semiconductor gap at high pressure GeS-type phases in contrary to NaCl-phases. (Read more)
- 451. Appl. Phys. Lett. 81, 883-885 (2002) , “Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias”, A. Galeckas, J. Linnros, and P. PirouzThe extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the recombination-enhanced motion of leading partial dislocations has been investigated by the technique of optical emission microscopy. From the temperature dependence of the measured velocity of the partials, an activation... (Read more)
- 452. Appl. Phys. Lett. 81, 64-66 (2002) , “Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells”, Nethaji Dharmarasu and Masafumi YamaguchiWe report the properties of observed defects in n+/p-InGaP solar cells created by irradiation of protons of different energies. Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (Ev + 0.90±0.05 eV), HP2... (Read more)
- 453. Appl. Phys. Lett. 81, 628-630 (2002) , “Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV”, V. BlickleWe report pseudodielectric function data ε = εa1 + iεa2 and ε = εc1 + iεc2 for the optically uniaxial material... (Read more)
- 454. Appl. Phys. Lett. 81, 5159-5161 (2002) , “The Mn3+/2+ acceptor level in group III nitrides”, T. Graf, M. Gjukic, M. S. Brandt, and M. StutzmannMolecular-beam-epitaxy grown GaN:Mn and AlN:Mn layers with Mn concentrations around 1020 cm3 were investigated by optical absorption and photoconductivity measurements. From electron spin resonance Mn is known to be mostly present in the neutral acceptor state in GaN... (Read more)
- 455. Appl. Phys. Lett. 81, 5018-5020 (2002) , “Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices”, Chang Seok Kang, Katsunori Onishi, Laegu Kang, and Jack C. LeeEffects of hafnium (Hf) contamination on the properties of n+-polycrystalline-Si/SiO2/Si metaloxidesemiconductor (MOS) devices were investigated using p-type Si substrates implanted by Hf ions. Flat-band voltages (Vfb) and substrate... (Read more)
- 456. Appl. Phys. Lett. 81, 4970-4972 (2002) , “Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study”, M. A. Reshchikov and H. MorkoçPhotoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied over a wide range of excitation intensities. A yellow luminescence (YL) band at about 2.2 eV saturates with increasing excitation intensity, whereas a green luminescence (GL) band at about 2.5 eV... (Read more)
- 457. Appl. Phys. Lett. 81, 496-498 (2002) , “Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers”, Xiangyang Ma, Xuegong Yu, Ruixin Fan, and Deren YangThe carrier concentration profile in boron-doped p-type nitrogen-containing Czochralski silicon wafer subjected to a one-step high-temperature (1150 °C) annealing followed by a prolonged 450 °C annealing has been investigated by spreading resistance profile. It is found that the... (Read more)
- 458. Appl. Phys. Lett. 81, 4958-4960 (2002) , “Low-dose n-type nitrogen implants in 4H-SiC”, N. S. SaksLightly-doped n-type layers have been fabricated in 4H-SiC by low-dose implantation of nitrogen ions and characterized using the Hall effect. Near-bulk electron mobility is achieved in the implanted layers. Activation rates for the implanted nitrogen ions, energies and densities of the... (Read more)
- 459. Appl. Phys. Lett. 81, 4841-4843 (2002) , “Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation”, I. Pintilie, L. Pintilie, and K. IrmscherAs-grown 4H-SiC epitaxial layers were investigated by deep-level transient spectroscopy to study the formation of the well-known Z1,2 defect with energy levels normally detected at about EC0.7 eV. Chemical vapor deposition, applying various... (Read more)
- 460. Appl. Phys. Lett. 81, 40-42 (2002) , “Platinum–hydrogen complexes in silicon observed by measurements of optical absorption and electron spin resonance”, N. Fukata, T. Mchedlidze, M. Suezawa, and K. SaitoPlatinumhydrogen (PtH) complexes in Si doped with Pt and H by heating at 10001300 °C followed by quenching in water were investigated from the measurements of optical absorption at 5 K and electron spin resonance (ESR) at 8 K. Optical absorption peaks at 1909.1 and 1910.3... (Read more)
- 461. Appl. Phys. Lett. 81, 3990-3992 (2002) , “Electrical characterization of acceptor levels in Be-implanted GaN”, Yoshitaka NakanoWe have investigated electrically the acceptor levels that are present in Be-implanted GaN. Slight p-type conductivity was attained in undoped GaN films by Be implantation and subsequent annealing at 1050 °C with a SiO2 encapsulation layer. Capacitance-frequency measurements... (Read more)
- 462. Appl. Phys. Lett. 81, 3987-3989 (2002) , “Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy”, P. KrispinDeep carrier traps in the upper half of the band gap of Ga(As,N) layers in the dilute N limit (0.1%) are examined by depth-resolved capacitance spectroscopy on n-type Ga(As,N)/GaAs heterojunctions grown by molecular-beam epitaxy. Distinct compositional fluctuations are revealed in the... (Read more)
- 463. Appl. Phys. Lett. 81, 3816-3818 (2002) , “Stability and electronic structure of hydrogen–nitrogen complexes in GaAs”, W. Orellana and A. C. FerrazWe investigate the stability and electronic properties of defects formed by a substitutional nitrogen in GaAs (NAs) plus interstitial hydrogen atoms using first-principles total-energy calculations. We find the formation of strong NAsH bond when a single H atom is... (Read more)
- 464. Appl. Phys. Lett. 81, 3356-3358 (2002) , “Cathodoluminescence of cubic boron nitride films deposited by chemical vapor deposition”, W. J. Zhang, H. Kanda, and S. MatsumotoCathodoluminescence (CL) characteristics of cubic boron nitride (cBN) films deposited by chemical vapor deposition were investigated. Combined with the results from Fourier-transformed infrared spectroscopy and Raman spectroscopy, the dependence of the emission energy and intensity on the phase... (Read more)
- 465. Appl. Phys. Lett. 81, 3161-3163 (2002) , “Carrier diffusion and radiative recombination in CdTe thin films”, Manuel J. Romero, Timothy A. Gessert, and Mowafak M. Al-JassimWe employed cathodoluminescence spectroscopy and imaging to investigate the carrier diffusion and radiative recombination in CdTe thin films. We observed that carriers excited by the electron beam diffuse by excitons or by free electrons via donor states at low temperatures. The distribution and... (Read more)
- 466. Appl. Phys. Lett. 81, 2989-2991 (2002) , “Theoretical evidence for the kick-out mechanism for B diffusion in SiC”, R. Rurali, P. Godignon, and J. RebolloIn this letter, we analyze by means of first-principles electronic structure calculations the diffusion of B impurities in 3C-SiC. We find, through molecular dynamics, that substitutional B at a Si lattice site is readily displaced by a nearby Si interstitial by the process known as a... (Read more)
- 467. Appl. Phys. Lett. 81, 2962-2964 (2002) , “Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar cells”, Manuel J. Romero, David S. Albin, Mowafak M. Al-Jassim, Xuanzhi Wu, Helio R. Moutinho, and Ramesh G. DhereWe investigate the distribution of Cu acceptor states in CdTe thin films used in high-efficiency solar cells. These states are CuCd and Cui+" align="middle">VCd-" align="middle"> complexes, which are relatively deep and shallow acceptors,... (Read more)
- 468. Appl. Phys. Lett. 81, 2734-2736 (2002) , “Effects of carbon codoping on lattice locations of erbium in silicon”, M. B. Huang and X. T. RenThe effects of carbon codoping on the lattice location of Er atoms in silicon have been investigated using ion beam channeling. A float-zone (FZ) Si (100) wafer was first amorphized to a depth of ~0.3 µm by Si ion implantation at 77 K. The amorphous Si layer was then implanted with... (Read more)
- 469. Appl. Phys. Lett. 81, 2575-2577 (2002) , “Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions”, T. Gebel, L. Rebohle, and W. SkorupaThe trapping effects of negative and positive charge in Ge-enriched SiO2 layers during high-field electron injection from the Si substrate of AlSiO2Si structures are studied. The capture cross section and the concentration of negatively and positively charged traps... (Read more)
- 470. Appl. Phys. Lett. 81, 2547-2549 (2002) , “Photoluminescence upconversion in 4H–SiC”, Mt. Wagner, I. G. Ivanov, L. Storasta, J. P. Bergman, B. Magnusson, W. M. Chen, and E. JanzénEfficient photoluminescence upconversion is observed in 4HSiC samples containing both the UD-3 defect and the titanium impurity. In this process, the titanium photoluminescence emission with no-phonon (NP) lines at 2.848 eV (A0) and 2.789 eV (B0) can be... (Read more)
- 471. Appl. Phys. Lett. 81, 1842-1844 (2002) , “Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon”, E. Simoen and C. ClaeysThe impact of plasma hydrogenation on the subsequent formation of thermal donors at 450 °C in n-type oxygen-doped high-resistivity float-zone silicon is investigated by a combination of electrical and spectroscopic techniques. It is shown that the increase of the doping concentration can... (Read more)
- 472. Appl. Phys. Lett. 81, 1830-1832 (2002) , “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy”, D. C. Look and D. C. ReynoldsAn N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: resistivity = 4×101 Ω cm; hole mobility = 2 cm2/V s; and hole... (Read more)
- 473. Appl. Phys. Lett. 81, 1821-1823 (2002) , “Electronic properties of vacancy–oxygen complex in Ge crystals”, V. P. Markevich, I. D. Hawkins, and A. R. PeakerIt is argued that the vacancyoxygen (VO) complex (A center) in Ge has three charge states: double negative, single negative, and neutral. Corresponding energy levels are located at Ec0.21 eV (VO/) and... (Read more)
- 474. Appl. Phys. Lett. 81, 1812-1814 (2002) , “Characteristics of deep levels in As-implanted GaN films”, L. Lee, W. C. Lee, H. M. Chung, M. C. Lee, W. H. Chen, and W. K. ChenHall, currentvoltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800 °C thermal annealing for 60 min, one additional deep level located at... (Read more)
- 475. Appl. Phys. Lett. 81, 165-167 (2002) , “Close to midgap trapping level in 60Co gamma irradiated silicon detectors”, I. PintilieThe deep level transient spectroscopy method was applied on standard and oxygenated float-zone silicon detectors exposed to high doses of 60Cogamma irradiation. We have detected and characterized a close to midgap trapping level having an ionization energy of... (Read more)
- 476. Appl. Phys. Lett. 81, 1225-1227 (2002) , “Quantification of substitutional carbon loss from Si0.998C0.002 due to silicon self-interstitial injection during oxidation”, M. S. Carroll and J. C. SturmThe empirical reaction of substitutional carbon with silicon self-interstitials in Si0.998C0.002 layers pseudomorphically grown on Si (100) substrates has been quantified at 850 °C. During annealing of a sample with a thin Si0.998C0.002 layer capped... (Read more)
- 477. Appl. Phys. Lett. 80, 995-997 (2002) , “Electronic characterization of n-ScN/p+ Si heterojunctions”, F. Perjeru, X. Bai, and M. E. KordeschWe report the electronic characterization of n-ScN in heterojunctions, including deep level transient spectroscopy of electrically active deep levels. ScN material has been grown by plasma assisted physical vapor deposition on commercial p+ Si substrates.... (Read more)
- 478. Appl. Phys. Lett. 80, 947-949 (2002) , “Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon”, P. G. Coleman and C. P. BurrowsMean concentrations CD of aggregated vacancy-type point-defect structures in float-zone Si implanted with H+, B+, Si+, O+, and Ge2+ ions at energies between 0.45 and 4.0 MeV have been measured as a function of ion dose φ at... (Read more)
- 479. Appl. Phys. Lett. 80, 805-807 (2002) , “Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy”, A. Hierro and A. R. ArehartThe effect of growth regime on the deep level spectrum of n-GaN using molecular-beam epitaxy (MBE) was investigated. As the Ga/N flux ratio was decreased towards Ga-lean conditions, the concentration of two acceptor-like levels, at Ec3.04 and 3.28 eV, increased... (Read more)
- 480. Appl. Phys. Lett. 80, 749-751 (2002) , “Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions”, J. Q. Liu and M. SkowronskiThe structure of stacking faults formed in forward-biased 4H- and 6H-SiC pn diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 103 and 104 cm1.... (Read more)
- 481. Appl. Phys. Lett. 80, 4777 (2002) , “Deep-level defects in InGaAsN grown by molecular-beam epitaxy”, R. J. Kaplar and S. A. RingelDeep-level transient spectroscopy (DLTS) studies on both p-type unintentionally doped and n-type (Si-doped), 1.05 eV band gap InGaAsN grown by molecular-beam epitaxy are reported. Two majority-carrier hole traps were observed in p-type material, H3 (0.38 eV)... (Read more)
- 482. Appl. Phys. Lett. 80, 4774 (2002) , “Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si”, S. Solmi, M. Attari, and D. NobiliThe effect of a point defect excess, vacancies, or, respectively, interstitials, on the deactivation kinetics of As in Si was verified on silicon on insulator (SOI) substrates uniformly doped at concentrations in the range 1.87×1020 cm3. SOI samples can... (Read more)
- 483. Appl. Phys. Lett. 80, 4762-4764 (2002) , “Changes in Al-related photoluminescence in 4H-SiC caused by hydrogenation”, Yaroslav Koshka and Michael S. MazzolaBoth reduction of the intensity of aluminum-related photoluminescence after hydrogenation and the phenomenon of the optical quenching of the Al bound exciton (AlBE) previously reported for hydrogenated 6H-SiC was observed now in the 4H-SiC polytype. Hydrogenation caused also a reduction of the... (Read more)
- 484. Appl. Phys. Lett. 80, 4504 (2002) , “Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N”, M. R. Correia, S. Pereira, A. Cavaco, and E. PereiraWe report the observation of the 1.54 µm emission from optically excited Er3+ in an ion-implanted In0.07Ga0.93N layer epitaxially strained grown by metalorganic chemical vapor deposition. The Er was implanted at 150 keV with a dose of 1×1015... (Read more)
- 485. Appl. Phys. Lett. 80, 4395-4397 (2002) , “Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon”, Jan Schmidt, Karsten Bothe, and Rudolf HezelWe investigate minority-carrier trapping centers in p-type Czochralski (Cz) silicon by means of the quasi-steady-state photoconductance method. Boron and gallium-doped Cz silicon wafers of varying resistivities and oxygen contamination levels are examined. A clear correlation of the trap... (Read more)
- 486. Appl. Phys. Lett. 80, 4354-4356 (2002) , “60Co gamma-irradiation-induced defects in n-GaN”, G. A. Umana-Membreno, J. M. Dell, T. P. Hessler, B. D. Nener, G. Parish, and L. FaraoneTransient capacitance measurements of Schottky diodes fabricated on nominally undoped n-type GaN exposed to 60Co gamma irradiation indicate the introduction of two defect levels with thermal activation energies of 89±6 and 132±11 meV. While the emission characteristics of... (Read more)
- 487. Appl. Phys. Lett. 80, 4163-4165 (2002) , “Effects of amorphizing species' ion mass on the end-of-range damage formation in silicon”, Mark H. Clark and Kevin S. JonesThe effects of preamorphizing ion mass on the end-of-range (EOR) damage and subsequent enhanced diffusivity have been investigated. Amorphizing silicon with implants of 22 keV 28Si+, 32 keV 73Ge+, 40 keV 119Sn+, and 45 keV... (Read more)
- 488. Appl. Phys. Lett. 80, 3934-3936 (2002) , “Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence”, C. C. Ling, W. K. Mui, C. H. Lam, C. D. Beling, S. Fung, and M. K. LuiPositron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (VGa) related defect. Isochronal annealing studies showed at 300 °C annealing,... (Read more)
- 489. Appl. Phys. Lett. 80, 3530-3532 (2002) , “Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si”, Ali Mokhberi, Reza Kasnavi, Peter B. Griffin, and James D. PlummerThe role of fluorine in suppressing boron diffusion was investigated by utilizing a buried dopant marker to monitor the interaction of fluorine with interstitials. A boron spike with a peak concentration of 1.2×1018 cm3 followed by 500 nm of undoped silicon was... (Read more)
- 490. Appl. Phys. Lett. 80, 3349-3351 (2002) , “Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence”, H. Y. Huang, C. H. Chuang, C. K. Shu, Y. C. Pan, W. H. Lee, W. K. Chen, W. H. Chen, and M. C. LeeWe have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic... (Read more)
- 491. Appl. Phys. Lett. 80, 3328-3330 (2002) , “Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN”, K. Kuriyama, T. Tokumasu, Jun Takahashi, and H. KondoThe lattice distortion and the transmuted-Ge related luminescence in neutron-transmutation-doped (NTD) GaN are studied by combining Rutherford backscattering spectroscopy/channeling, Raman scattering, and photoluminescence methods. The lattice displacement of Ga atoms of ~0.12 Å from the 0001... (Read more)
- 492. Appl. Phys. Lett. 80, 3298-3300 (2002) , “Nondestructive defect delineation in SiC wafers based on an optical stress technique”, Xianyun Ma, Mathew Parker, and Tangali S. SudarshanThe potential of using the optical stress technique to delineate the various defects in silicon carbide (SiC) wafers has been fully demonstrated. The observed defects include micropipes, dislocations, stress striations, grain boundary or dislocation walls, and regions of polytype nonuniformity.... (Read more)
- 493. Appl. Phys. Lett. 80, 2878-2879 (2002) , “Creation and suppression of point defects through a kick-out substitution process of Fe in InP”, Y. W. Zhao, H. W. Dong, Y. H. Chen, Y. H. Zhang, J. H. Jiao, J. Q. Zhao, and L. Y. LinIndium antisite defect InP-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation... (Read more)
- 494. Appl. Phys. Lett. 80, 2869-2871 (2002) , “Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO”, Naoki Ohashi, Takamasa Ishigaki, Nobuhiro Okada, Takashi Sekiguchi, Isao Sakaguchi, and Hajime HanedaA pulse-modulated plasma irradiation technique was applied to hydrogenation of ZnO. Three kinds of ZnO samples were employed to investigate the electronic state of hydrogen in ZnO. Secondary-ion-mass-spectroscopy analysis using isotope tracer revealed that the surface layer to 100 nm was doped with... (Read more)
- 495. Appl. Phys. Lett. 80, 2657-2659 (2002) , “Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy”, H. P. Gunnlaugsson and G. WeyerInterstitial 57mFe atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400800 K as a result of the recoil imparted on these daughter atoms in the β decay of ion-implanted, substitutional 57Mn. Diffusional jumps... (Read more)
- 496. Appl. Phys. Lett. 80, 240-242 (2002) , “Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (110)”, Y. Negoro, N. Miyamoto, T. Kimoto, and H. MatsunamiHigh-dose ion implantation of phosphorus into 4HSiC has been investigated. Phosphorus ion implantation with a 1×1016 cm2 dose at 800 °C into 4HSiC (0001) has resulted in a sheet resistance of 80 Ω/ after annealing at 1700 °C. A similar... (Read more)
- 497. Appl. Phys. Lett. 80, 237-239 (2002) , “Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect”, A. Gali, B. Aradi, and D. HeringerUsing first principles calculations, the vibronic properties of hydrogen in a silicon vacancy (VSi + H) are investigated in 3CSiC. The calculations show that the neutral VSi + H complex, which can bind an exciton, is stable only in lightly p-type SiC. This result... (Read more)
- 498. Appl. Phys. Lett. 80, 2332-2334 (2002) , “Magnetophotoluminescence of neutral acceptor states in InSb”, J. A. H. Stotz and M. L. W. ThewaltMagnetophotoluminescence experiments on n-type bulk indium antimonide crystals have been performed using a cryogenically cooled interferometer. Both donoracceptor-pair and free electron-to-neutral acceptor recombination transitions have been observed for four distinct acceptor species.... (Read more)
- 499. Appl. Phys. Lett. 80, 228-230 (2002) , “Enhanced nitrogen diffusion in 4H-SiC”, G. J. Phelps, N. G. Wright, E. G. Chester, C. M. Johnson, A. G. O'Neill, S. Ortolland, A. Horsfall, and K. VassilevskiExperimental evidence is given for boron (B) enhanced diffusion of nitrogen (N) in ion-implanted 4H silicon carbide (4H-SiC), when a nitrogen implant is co-doped within an existing boron p-type well. The co-implanted nitrogen is shown to diffuse continuously with time when samples are... (Read more)
- 500. Appl. Phys. Lett. 80, 2120-2122 (2002) , “Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy”, P. KrispinDeep levels in the upper half of the band gap of strained Ga(As,N) with a GaN mole fraction of 3% are examined by deep-level transient Fourier spectroscopy on GaAs/Ga(As,N)/GaAs heterojunctions grown by molecular-beam epitaxy. In as-grown structures, we find a dominant electron trap at 0.25 eV below... (Read more)
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