Editing Log
.
J. Appl. Phys. 102, 084505 (2007) ,
“Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams”, A. Uedono, K. Ito, H. Nakamori, K. Mori, Y. Nakano, T. Kachi, S. Ishibashi, T. Ohdaira, and R. Suzuki
- last updated at 2007-11-03 03:02:19
Updated at 2010-07-20 16:50:39
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Materials
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Others(101 tags)
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Technique
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Details
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Bond(35 tags)
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Defect(interstitial)(18 tags)
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Defect-type(19 tags)
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Element(65 tags)
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Energy(8 tags)
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Isotope(56 tags)
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Label(303 tags)
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Sample(17 tags)
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Spin(8 tags)
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Symmetry(15 tags)
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