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Editing Log
. J. Appl. Phys. 96, 5613 (2004) , “Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si”, K. A. Jones, P. B. Shah, T. S. Zheleva, M. H. Ervin, M. A. Derenge, J. A. Freitas, S. Harmon, J. McGee, R. D. Vispute
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Updated at 2010-07-20 16:50:39
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⚠ Our services moved from http://www.kc.tsukuba.ac.jp/div-media/... to http://esrlab.bk.tsukuba.ac.jp/div-media/... in January 2018. The functions of the our services are unchanged. Thank you.