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- 901. J. Appl. Phys. 86, 752 (1999) , “Ion-implantation in bulk semi-insulating 4H–SiC”, Mulpuri V. Rao and Jesse B. TuckerMultiple energy N (at 500 °C) and Al (at 800 °C) ion implantations were performed into bulk semi-insulating 4HSiC at various doses to obtain uniform implant concentrations in the range 1 × 10181 × 1020 cm 3 to a depth of 1.0... (Read more)
- 902. J. Appl. Phys. 86, 7186 (1999) , “Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers”, Yoichi Yamada, Chiharu Sasaki, Satoshi Kurai, and Tsunemasa TaguchiRecombination dynamics of excitonic transitions in GaN homoepitaxial layers has been studied by means of time-resolved luminescence spectroscopy. An excitation-density-dependent transition of the dominant radiative recombination process at 3.471 eV from donor-bound excitons to biexcitons was clearly... (Read more)
- 903. J. Appl. Phys. 86, 6697 (1999) , “Implant dose dependence in doping Si atoms from a-Si:H films into S + -implanted GaAs”, Katsuhiro Yokota, Kazuhiro Nakamura, Tomoyuki Ishizu, and Masanori SakaguchiSulfur (S + ) ions were implanted into gallium arsenide (GaAs) at 50 keV at various doses. Hydrogenated amorphous silicon (a-Si:H) films were deposited on the surface of the S + -implanted GaAs using a radio-frequency glow discharge system. The samples were annealed in... (Read more)
- 904. J. Appl. Phys. 86, 6677 (1999) , “Characterization of defect-related optical absorption in ZnGeP2”, S. D. Setzler, P. G. Schunemann, and T. M. PollakA broad optical absorption band with a peak near 1 µm is present in most single crystals of ZnGeP2. These same crystals have an electron paramagnetic resonance (EPR) signal which has been assigned to singly ionized zinc vacancies. A direct correlation between the intensity of the... (Read more)
- 905. J. Appl. Phys. 86, 6068 (1999) , “S and Si ion implantation in GaSb grown on GaAs”, Mulpuri V. Rao, Alok K. Berry, and Thang Q. DoSingle and multiple energy S and Si ion implantations were performed at room temperature (RT) and 200 °C into GaSb epitaxial layers grown on semi-insulating GaAs substrates. The implanted material was annealed with a Si3N4 cap at 400600 °C for 5 min. Secondary ion... (Read more)
- 906. J. Appl. Phys. 86, 6039 (1999) , “Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation”, I. O. Usov, A. A. Suvorova, V. V. Sokolov, and Y. A. Kudryavtsev6HSiC wafers were implanted at room temperature (RT) and at 1700 °C high temperature (HT) with 50 keVAl + ions to doses from 1.4×1014 to 1.4×1016 cm2. Compared to samples implanted at RT, the samples implanted at high... (Read more)
- 907. J. Appl. Phys. 86, 5909 (1999) , “Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate”, H. Boudinov, J. P. de Souza, and C. K. SaulElectrical activation of In of 18%52% of the implanted dose (5×1014 cm2) was obtained in Si samples having a C + coimplantation after rapid thermal annealing (RTA) at 8001000 °C for 15 s. This electrical activation yield markedly... (Read more)
- 908. J. Appl. Phys. 86, 5630 (1999) , “Light-illumination-induced transformation of electron traps in hydrogen-implanted n-type silicon”, Yutaka Tokuda and Hitoshi ShimadaLight-illumination-induced transformation of electron traps in 170 keV hydrogen-implanted n-type silicon with a dose of 2×1010 cm2 has been studied with deep level transient spectroscopy for fabricated gold Schottky diodes. In addition to the well-known... (Read more)
- 909. J. Appl. Phys. 86, 5624 (1999) , “Theoretical investigation of shallow acceptors confined in Si/Si1–xGex quantum well structures”, Q. X. Zhao and M. WillanderEnergy levels of the shallow acceptor states have been calculated for center-doped Si/Si1xGex/Si quantum wells. The impurity states were calculated using an effective-mass theory that accounts for valence-band mixing as well as the mismatch of band... (Read more)
- 910. J. Appl. Phys. 86, 5392 (1999) , “Oxygen-related defects in O + -implanted 6H–SiC studied by a monoenergetic positron beam”, Akira Uedono and Shoichiro TanigawaVacancy-type defects and their annealing properties for O + - or N2 + " align="middle">-implanted 6HSiC were studied using a monoenergetic positron beam. For ion-implanted specimens with a dose of 1×1013 cm2, the mean size of open volume... (Read more)
- 911. J. Appl. Phys. 86, 5385 (1999) , “Defects in p+-gate metal–oxide–semiconductor structures probed by monoenergetic positron beams”, Akira Uedono, Masako Hiketa, and Shoichiro TanigawaDefects in p+-gate metaloxidesemiconductor structures were probed using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for BF2+" align="middle">- or B +... (Read more)
- 912. J. Appl. Phys. 86, 5372 (1999) , “Copper complexes in silicon”, Minoru Nakamura and Hitoshi IwasakiIn order to investigate the exchange between copper complexes (Cu centers) in silicon crystal, the change of the photoluminescence (PL) intensity of the Cu center (Cu PL center; no-phonon peak: 1.014 eV) with annealing time was measured for p-type float-zone grown silicon crystals diffused... (Read more)
- 913. J. Appl. Phys. 86, 5305 (1999) , “Photoluminescence study of deep levels in CuGaTe2 crystals”, J. Krustok and J. RaudojaA deep photoluminscence band at 0.95 eV was studied in CuGaTe2 crystals. The shape of this band did not change with laser power and no j shift was detected. This band shifts towards higher energy with increasing temperature and its shape becomes more asymmetric. The activation... (Read more)
- 914. J. Appl. Phys. 86, 5040 (1999) , “Fermi level control and deep levels in semi-insulating 4H–SiC”, W. C. Mitchel, R. Perrin, J. Goldstein, A. Saxler, M. Roth, S. R. Smith, and J. S. SolomonTemperature dependent Hall effect, optical admittance spectroscopy, and optical absorption measurements of semi-insulating bulk 4HSiC are reported. Both intentionally vanadium doped material and commercial grade semi-insulating material were investigated. The carrier concentration versus... (Read more)
- 915. J. Appl. Phys. 86, 4865 (1999) , “Thermal properties of H-related complexes in electron-irradiated Si doped with H”, Masashi SuezawaThe thermal properties, namely, the thermal stability and the activation energy, of H-point defect complexes in Si were investigated. Specimens were doped with H by annealing in H2 gas followed by quenching. Then, they were irradiated by 3 MV electrons at room temperature. Subsequently,... (Read more)
- 916. J. Appl. Phys. 86, 4861 (1999) , “Room-temperature vacancy migration in crystalline Si from an ion-implanted surface layer”, Arne Nylandsted LarsenMigration of vacancies in crystalline, n-type silicon at room temperature from Ge+-implanted (150 keV, 5×1091×1011 cm2) surface layers was studied by tracing the presence of PV pairs (E centers) in the underlying... (Read more)
- 917. J. Appl. Phys. 86, 4855 (1999) , “Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions”, L. Quintanilla, R. Pinacho, L. Enríquez, R. Peláez, S. Dueñas, E. Castán, L. Bailón, and J. BarbollaThe electrical characterization of He-ion implantation-induced deep levels existing in fully implanted p+n InP junctions isolated by He bombardment is reported in this work. An electron trap located at 0.19 eV below the conduction band and a hole trap located at 0.13 eV... (Read more)
- 918. J. Appl. Phys. 86, 4703 (1999) , “Formation of SiC-surface layer by ion implantation”, E. Theodossiu, H. Baumann, and K. BethgeA homogeneous SiC-surface layer is formed by implantation of 40 keV 13C carbon ions into single-crystalline silicon 100" align="middle"> with a fluence of 3.8×1017 ions/cm2 and subsequent electron beam rapid thermal annealing (EB-RTA). The carbon-depth... (Read more)
- 919. J. Appl. Phys. 86, 4348 (1999) , “Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC”, N. T. Son, A. Ellison, B. Magnusson, M. F. MacMillan, W. M. Chen, B. Monemar, and E. JanzénPhotoluminescence (PL) and Zeeman effect measurements in near-infrared luminescence bands in Cr-doped 4H and 6H SiC are presented. The PL spectrum consists of two no-phonon lines (NPLs) at 1.1583 and 1.1898 eV in 4H SiC and three NPLs at 1.1556, 1.1797, and 1.1886 eV in 6H SiC. The observed Zeeman... (Read more)
- 920. J. Appl. Phys. 86, 4176 (1999) , “The influence of boron ion implantation on hydrogen blister formation in n-type silicon”, T. Höchbauer, K. C. Walter, R. B. Schwarz, and M. NastasiWe have studied the formation of surface blisters in 100" align="middle"> n-type silicon following co-implantation with boron and hydrogen. The silicon substrates had four different n-type dopant levels, ranging from 1014 to 1019 cm3. These... (Read more)
- 921. J. Appl. Phys. 86, 3792 (1999) , “Role of oxygen vacancy defect states in the n-type conduction of β-Ga2O3”, Zoltán Hajnal, József Miró, Gábor Kiss, Ferenc Réti, Péter Deák, Roy C. Herndon, and J. Michael KuperbergBased on semiempirical quantum-chemical calculations, the electronic band structure of β-Ga2O3 is presented and the formation and properties of oxygen vacancies are analyzed. The equilibrium geometries and formation energies of neutral and doubly ionized vacancies were... (Read more)
- 922. J. Appl. Phys. 86, 364 (1999) , “Origin of the deep center photoluminescence in CuGaSe2 and CuInS2 crystals”, J. KrustokPhotoluminescence (PL) of CuGaSe2 and CuInS2 single crystals, either as grown or Cu annealed, reveals a broad and clear deep emission band at hEg 0.6 eV. In both of these as-grown materials this band has a similar doublet structure with... (Read more)
- 923. J. Appl. Phys. 86, 3175 (1999) , “Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon”, Jan Schmidt and Andrés CuevasIn order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of... (Read more)
- 924. J. Appl. Phys. 86, 3015 (1999) , “The origin of shallow etch pit defects in low dislocation density GaP crystals”, H. Okada, T. Kawanaka, and S. OhmotoThe defect corresponding to shallow etch pits (S-pits) on GaP wafer has been revealed. It is a vacancy-type Frank dislocation loop which surrounds a stacking fault. It is proposed that this loop is formed by the condensation of excess gallium vacancies during cooling of the GaP crystal. The... (Read more)
- 925. J. Appl. Phys. 86, 281 (1999) , “Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy”, V. A. Joshkin, C. A. Parker, S. M. Bedair, J. F. Muth, I. K. Shmagin, and R. M. KolbasWe report on the investigation of the effect of growth temperature on point defect density of unintentionally doped GaN grown by atmospheric pressure metalorganic chemical vapor deposition and hydride vapor phase epitaxy. A correlation between photoluminescence (PL) spectra and the concentration of... (Read more)
- 926. J. Appl. Phys. 86, 2352 (1999) , “Ion channeling study of the lattice disorder in neutron irradiated GaP”, K. Kuriyama, Y. Miyamoto, T. Koyama, and O. OgawaThe lattice disorder in GaP produced by fast neutrons with a fluence of 2.1 × 1018 cm 2 has been investigated with 1.5 MeV 4He + channeling. The slight increase in the 111" align="middle"> aligned yield for irradiated crystals indicates that... (Read more)
- 927. J. Appl. Phys. 86, 217 (1999) , “Deep level analysis of radiation-induced defects in Si crystals and solar cells”, Masafumi Yamaguchi, Aurangzeb Khan, and Stephen J. TaylorDeep level transient spectroscopy (DLTS) analysis of radiation-induced defects in p-type Si crystals and solar cells has been carried out to clarify the mechanism of the anomalous degradation of Si n+pp+ structure space cells induced by... (Read more)
- 928. J. Appl. Phys. 86, 214 (1999) , “Migration energy for the silicon self-interstitial”, Anders Hallén, Niclas Keskitalo, Lalita Josyula, and Bengt G. SvenssonThe generation of vacancy-related point defects in low dose 1.3 MeV proton irradiated high purity silicon has been investigated. The dose rate was varied to give a total dose of 5 × 109 cm 2 at irradiation temperatures from 70 to 295 K. The inverse dose rate... (Read more)
- 929. J. Appl. Phys. 86, 2042 (1999) , “X-ray induced luminescence of high-purity, amorphous silicon dioxide”, A. J. Miller, R. G. Leisure, and Wm. R. AustinA comprehensive study of x-ray stimulated luminescence has been carried out on four types of high-purity, amorphous silica (a-SiO2). Both high OH and low OH as well as oxygen-excess and oxygen-deficient materials were studied. The room-temperature, visible x-radio luminescence... (Read more)
- 930. J. Appl. Phys. 86, 190 (1999) , “Characterization of vacancies in as-grown and electron irradiated α-quartz by means of positron annihilation”, S. Dannefaer, T. Bretagnon, and D. CraigenSynthetic α-quartz is shown to contain a significant concentration (several ppm) of vacancies. The major concentration of vacancies is suggested to be in the form of divacancies, giving rise to a positron lifetime of 285 ± 5 ps, but in addition, there is a much smaller concentration of... (Read more)
- 931. J. Appl. Phys. 86, 1888 (1999) , “Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity”, T. Laine, K. Saarinen, P. Hautojärvi, and C. CorbelWe use a low-energy positron beam to study the influence of doping and stoichiometry on the native defects in GaAs grown by molecular-beam epitaxy at 250 °C. Ga vacancies are identified in all samples by measuring the momentum distribution of annihilating core electrons. The charge of... (Read more)
- 932. J. Appl. Phys. 86, 1848 (1999) , “Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials”, Naoki Fukata and Masashi SuezawaWe determined the formation energy of self-interstitials in carbon (C)-doped Si from measurements of optical absorption due to hydrogen (H) bound to isolated self-interstitials. Specimens of C-doped Si were sealed in quartz capsules together with hydrogen (H) gas, with pressure being 1 atm at high... (Read more)
- 933. J. Appl. Phys. 86, 1762 (1999) , “A near-infrared photoluminescence study of GaAs nanocrystals in SiO2 films formed by sequential ion implantation”, Yoshihiko Kanemitsu, Hiroshi Tanaka, and Takashi KushidaWe have studied photoluminescence (PL) properties of Ga + and As + implanted SiO2 films on Si substrate. After thermal annealing, zinc blende GaAs nanocrystals are formed in SiO2 films and several PL bands appear in the red and near-infrared spectral... (Read more)
- 934. J. Appl. Phys. 86, 1542 (1999) , “Oxidation-induced traps near SiO2/SiGe interface”, C. G. Ahn, H. S. Kang, Y. K. Kwon, S. M. Lee, B. R. Ryum, and B. K. KangUsing an Al/SiO2(wet)/Si0.9Ge0.1/nSi/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2)... (Read more)
- 935. J. Appl. Phys. 86, 1439 (1999) , “Compensation introduced by defect complexes in p-type ZnSe”, Tian-Ling RenDefect complexes in N-doped and As-doped ZnSe are studied by using the discrete-variational local-density-functional method within a cluster model. Based on the difference of formation energy between two complexes, it is found that the NSeZnVSe complex is a more... (Read more)
- 936. J. Appl. Phys. 86, 1433 (1999) , “Deep hole traps in Be-doped Al0.5Ga0.5As layers grown by molecular beam epitaxy”, J. Szatkowski, E. Paczek-Popko, and K. SieraskiDeep hole traps in p-type Al0.5Ga0.5As grown by molecular beam epitaxy have been studied by the deep-level transient-spectroscopy method applied to samples with a Schottky diode configuration. Five hole traps, labeled as H0 to H4, were found. For traps H1, H3, and H4 the... (Read more)
- 937. J. Appl. Phys. 86, 1393 (1999) , “Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related donor centers in molecular beam epitaxy grown ZnSe”, H. Pelletier, B. Theys, and A. LussonNitrogen doped ZnSe layers grown by molecular beam epitaxy have been exposed to a hydrogen or deuterium plasma. Deuterium diffusion profiles have been measured by secondary ion mass spectroscopy. The main feature of these profiles is the presence of a plateau on which the H concentration closely... (Read more)
- 938. J. Appl. Phys. 85, 94 (1999) , “Comparison of Cu gettering to H + and He + implantation-induced cavities in separation-by-implantation-of-oxygen wafers”, Miao Zhang, Chenglu Lin, and Xinzhong DuoWell-defined bands of cavities have been formed beneath the buried oxide (BOX) layer of two sets of separation-by-implantation-of-oxygen (SIMOX) wafers by H + and He + implantation. The gettering of Cu impurities, which were implanted into the top Si layer at different doses... (Read more)
- 939. J. Appl. Phys. 85, 8292 (1999) , “SiC/SiO2 interface-state generation by electron injection”, V. V. Afanas'ev and A. StesmansGeneration of interface states caused by electron injection in n- and p-type (3C, 4H, 6H)SiC/SiO2/metal structures was studied using photoinjection methods. The charge trapping in the oxides on SiC was found to be similar to the charging of thermal oxides on Si.... (Read more)
- 940. J. Appl. Phys. 85, 8074 (1999) , “Shoulder at the 887 cm – 1 infrared band in neutron irradiated Si”, C. A. Londos, N. V. Sarlis, and L. G. FytrosInfrared spectroscopy was used to study the 887 cm1 band in neutron irradiated Czochralski-grown silicon arising in the spectra upon annealing of the 830 cm1 band of the VO defect. Our analysis showed the presence of a 884 cm1 shoulder in the region... (Read more)
- 941. J. Appl. Phys. 85, 8054 (1999) , “Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen”, D. Åberg, M. K. Linnarsson, and B. G. SvenssonCzochralski-grown silicon wafers doped with phosphorus (~ 1014 cm 3) have been annealed in nitrogen, wet nitrogen, oxygen, argon, and vacuum ambients at 470 °C for times up to 500 h. Sample characterization was made using predominantly electrical techniques such as... (Read more)
- 942. J. Appl. Phys. 85, 7978 (1999) , “Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions”, L. Quintanilla, R. Pinacho, L. Enríquez, R. Peláez, S. Dueñas, E. Castán, L. Bailón, and J. BarbollaThe electrical characterization of a He ion implantation-induced deep level existing in fully implanted p+n InP junctions isolated by He bombardment has been carried out in this work. A discrete deep level located at 0.19 eV below the conduction band was detected by deep... (Read more)
- 943. J. Appl. Phys. 85, 7972 (1999) , “Photoluminescence properties of MgxCd1 – xSe mixed single crystals”, Chang-Dae Kim, Dong-Ho Shin, Hyang-Hee Jang, and Hae-Mun JeongThe photoluminescence spectra of MgxCd1 xSe (0.00x0.46) mixed single crystals grown by the chemical transport reaction technique were investigated. We observed an emission band (I2) due to excitons bound to a neutral donor, an... (Read more)
- 944. J. Appl. Phys. 85, 7759 (1999) , “ZnSe/GaAs band-alignment determination by deep level transient spectroscopy and photocurrent measurements”, A. Souifi, R. Adhiri, R. Le Dantec, and G. GuillotUsing deep level transient spectroscopy and photocurrent measurements we have investigated Schottky contacts formed on p-isotype Zn(SSe)/GaAs heterostructures grown by molecular beam epitaxy on p-GaAs(100) substrates. A deep level located at 0.6 eV above the ZnSe valence band is... (Read more)
- 945. J. Appl. Phys. 85, 7604 (1999) , “Electron-irradiation-induced deep levels in n-type 6H–SiC”, M. Gong, S. Fung, and C. D. BelingThe fluence-dependent properties and the annealing behavior of electron-irradiation-induced deep levels in n-type 6HSiC have been studied using deep-level transient spectroscopy (DLTS). Sample annealing reveals that the dominant DLTS signal at EC 0.36 eV... (Read more)
- 946. J. Appl. Phys. 85, 7597 (1999) , “Boron segregation to extended defects induced by self-ion implantation into silicon”, Jianxin Xia, Tomoya Saito, Ryangsu Kim, Takenori Aoki, Yoshinari Kamakura, and Kenji TaniguchiThe evolution of boron segregation to extended defects during thermal annealing was studied with secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Czochralski Si wafers with a boron concentration of 3 × 1017 cm 3 were implanted... (Read more)
- 947. J. Appl. Phys. 85, 7120 (1999) , “A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC”, M. Gong, S. Fung, and C. D. Beling1.7 MeV electron irradiation-induced deep levels in p-type 6HSiC have been studied using deep level transient spectroscopy. Two deep hole traps are observed, which are located at EV+0.55 eV and EV+0.78 eV. They have been identified as... (Read more)
- 948. J. Appl. Phys. 85, 6926 (1999) , “Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs”, K. Kuriyama, T. Koyama, and K. KushidaNuclear reaction analysis (NRA), using the 12C(d,p)13C reaction, in conjunction with Rutherford backscattering spectrometry (RBS) in the channeling geometry was used to evaluate the substitutional fraction of C in (100)-oriented semi-insulating GaAs implanted with... (Read more)
- 949. J. Appl. Phys. 85, 6751 (1999) , “Light-induced charge transport processes in photorefractive Ba0.77Ca0.23TiO3 doped with iron”, A. Mazur, C. Veber, O. F. Schirmer, C. Kuper, and H. HessePhotorefractive barium-calcium titanate crystals with the congruently melting composition (Ba0.77Ca0.23TiO3) doped with iron are annealed in a hydrogen atmosphere at various temperatures. The samples are studied with electron paramagnetic resonance (EPR) and optical... (Read more)
- 950. J. Appl. Phys. 85, 6746 (1999) , “Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride”, Kwang Soo Seol, Tsuyoshi Futami, Takashi Watanabe, and Yoshimichi OhkiWhen amorphous silicon nitride films are irradiated by a KrF excimer laser, they exhibit broad photoluminescence (PL) centered around 2.4 eV. The PL intensity gradually decreases and the PL peak energy shifts to a lower energy with an increase of the implanted dose of Ar + ions. This... (Read more)
- 951. J. Appl. Phys. 85, 633 (1999) , “Deep trap in InGaAs grown by gas source molecular beam epitaxy”, Yoshifumi TakanashiThe deep-level transient spectroscopy (DLTS) measurement method is used to investigate the deep traps in In0.53Ga0.47As grown by gas source molecular beam epitaxy. An electron trap with activation energy of 0.28 eV is detected and a capture cross section is estimated to be 8.03... (Read more)
- 952. J. Appl. Phys. 85, 439 (1999) , “Photoluminescence study of deep levels in Cr-doped ZnSe”, S. Bhaskar, P. S. Dobal, B. K. Rai, and R. S. KatiyarSingle crystals of intrinsic ZnSe were grown by the seeded physical vapor transport method and the diffusion doping was utilized to incorporate Cr in these crystals. The radiative recombinations in these samples with Cr concentration in the range 1.010.2 × 1019 cm ... (Read more)
- 953. J. Appl. Phys. 85, 3661 (1999) , “Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations”, L. G. Gosset, J. J. Ganem, H. J. von Bardeleben, S. Rigo, I. Trimaille, J. L. Cantin, T. Åkermark, and I. C. VickridgeThe modification by postoxidation NO treatments of the Si/SiO2 interface in thermally grown Si(100)/SiO2 layers has been studied by nuclear reaction analysis and electron paramagnetic resonance spectroscopy. Our results demonstrate a selective incorporation of NO molecules at... (Read more)
- 954. J. Appl. Phys. 85, 3556 (1999) , “2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects”, D. C. Schmidt and B. G. SvenssonPlatinum has been diffused at 300800 °C for 30 min into n-type epitaxial silicon samples during 2 MeV electron irradiation using a dose of 1 × 1017 e cm 2. Thereafter the samples were characterized by capacitancevoltage... (Read more)
- 955. J. Appl. Phys. 85, 3499 (1999) , “Redshift of the longitudinal optical phonon in neutron irradiated GaP”, K. Kuriyama and Y. MiyamotoRedshift of the longitudinal optical (LO) phonon relating to the defect structure in neutron-irradiated GaP has been studied using Raman scattering, electron paramagnetic resonance, x-ray diffraction, and Fourier-transform infrared absorption methods. The defect structure is discussed for the two... (Read more)
- 956. J. Appl. Phys. 85, 3198 (1999) , “Donor-acceptor pair recombination in AgIn5S8 single crystals”, N. M. GasanlyPhotoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.441.91 eV energy region and in the 10170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm ... (Read more)
- 957. J. Appl. Phys. 85, 3139 (1999) , “Thermally stimulated-current observation of hole traps in undoped semi-insulating GaAs and their photoquenching behavior”, Maki Suemitsu and Yoshitomo SagaeDetailed thermally stimulated-current measurements have been conducted on an undoped, semi-insulating GaAs crystal under 1.06 µm illumination at 15 K. By combining with Hall voltage measurements, we confirmed the presence of hole traps that show similar activation energies with the one... (Read more)
- 958. J. Appl. Phys. 85, 3114 (1999) , “Removal of end-of-range defects in Ge + -pre-amorphized Si by carbon ion implantation”, Peng-Shiu Chen and T. E. HsiehCarbon ion implantation was employed to annihilate the end-of-range (EOR) defects in Ge + -pre-amorphized Si. Experimental results showed that the efficiency of EOR defect removal depends on the Ge + -pre-amorphization conditions, the location of projected range... (Read more)
- 959. J. Appl. Phys. 85, 2568 (1999) , “Infrared and transmission electron microscopy studies of ion-implanted H in GaN”, C. H. Seager, S. M. Myers, G. A. Petersen, J. Han, and T. HeadleyH and D have been implanted into undoped films of GaN heteroepitaxially grown on sapphire over a dose range from 5 × 1015 to 5 × 1017 ions/cm2. After a 600 °C post-implantation anneal, room temperature Fourier-transform-infrared spectroscopy reveals... (Read more)
- 960. J. Appl. Phys. 85, 2562 (1999) , “Hydrogen interaction with implantation induced point defects in p-type silicon”, S. Fatima and C. JagadishInteraction of hydrogen with implantation induced point defects in p-type Si has been monitored using deep level transient spectroscopy. H ions are implanted into p-Si using low doses in the range from 109 to 1010 cm 2. Vacancy and interstitial... (Read more)
- 961. J. Appl. Phys. 85, 2390 (1999) , “He-implantation induced defects in Si studied by slow positron annihilation spectroscopy”, R. S. Brusa, G. P. Karwasz, N. Tiengo, and A. ZeccaOpen volume defect profiles have been obtained by performing Doppler broadening measurements with a slow positron beam on p-type Si samples implanted near liquid nitrogen temperature with He ions at 20 keV and at 5 × 1015 and 2 × 1016 cm 2... (Read more)
- 962. J. Appl. Phys. 85, 2175 (1999) , “Identification of the nature of platinum related midgap state in silicon by deep level transient spectroscopy”, K. S. R. K. RaoIn this article, we present the detailed investigations on platinum related midgap state corresponding to Ec 0.52 eV probed by deep level transient spectroscopy. By irradiating the platinum doped samples with high-energy (1.1 MeV) gamma rays, we observed that the... (Read more)
- 963. J. Appl. Phys. 85, 2093 (1999) , “The electrical properties of terbium ions in crystalline Si”, Sebania Libertino and Salvatore CoffaWe have investigated the electrical properties of terbium ions incorporated in crystalline Si. Silicon p+-n junctions were realized in n-type epitaxial or Czochralski-grown Si, having an O concentration of ~ 1015 and 7 ×... (Read more)
- 964. J. Appl. Phys. 85, 2001 (1999) , “Theoretical evidence for the semi-insulating character of AlN”, Antonella Fara, Fabio Bernardini, and Vincenzo FiorentiniWe present ab initio density-functional calculations for acceptors, donors, and native defects in aluminum nitride, showing that acceptors are deeper (Be ~ 0.25 eV, Mg ~ 0.45 eV) and less soluble than in GaN; at further variance with GaN, both the extrinsic donors SiAl and... (Read more)
- 965. J. Appl. Phys. 85, 1825 (1999) , “Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium”, J. G. Cederberg, T. D. Culp, and B. BiegWe have investigated the use of an alternative erbium precursor, tris(3,5-di-tert-butyl- pyrazolato)bis(4-tert-butylpyridine)erbium, to dope erbium into GaAs. The incorporated erbium forms an optically active center identified as Er2O. The GaAs:Er formed using this precursor... (Read more)
- 966. J. Appl. Phys. 85, 174 (1999) , “Trapping of Si interstitials in boron doping background: Boron clustering and the "+1" model”, M. B. Huang and I. V. MitchellBoron transient enhanced diffusion (TED) in Si predoped with boron isotope atoms has been studied using secondary ion mass spectroscopy and channeling nuclear reaction analysis. Si crystal was first implanted with 11B ions of various doses and subsequently annealed at 1100 °C for 2 h... (Read more)
- 967. J. Appl. Phys. 85, 168 (1999) , “Optical and electron paramagnetic resonance study of light-emitting Si + ion implanted silicon dioxide layers”, M. Ya. Valakh, V. A. Yukhimchuk, V. Ya. Bratus', and A. A. KonchitsThermally grown SiO2 on Si substrates implanted with Si + ions with a dose of 6 × 1016 cm 2 were studied by the techniques of photoluminescence, electron paramagnetic resonance (EPR), and low-frequency Raman scattering. Distinct... (Read more)
- 968. J. Appl. Phys. 85, 1582 (1999) , “Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy”, A. Cavallini and B. FraboniWe have carried out deep level transient spectroscopy (DLTS), optical DLTS, and capacitancevoltage measurements on liquid phase epitaxy-grown Er-doped Si to characterize the deep levels present in the material and to identify those related to dislocations and involved in the luminescence... (Read more)
- 969. J. Appl. Phys. 85, 1423 (1999) , “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films”, I. Dirnstorfer, D. M. Hofmann, D. Meister, and B. K. MeyerOptical and electrical measurements were carried out on annealed CuIn(Ga)Se2 (CIGS) thin films with Ga content of 10%. Annealing of as-grown In-rich CIGS in air/oxygen at 400 °C changes the photoluminescence spectrum to a spectrum which is usually obtained from as-grown Cu-rich CIGS.... (Read more)
- 970. J. Appl. Phys. 85, 1401 (1999) , “Helium-implanted silicon: A study of bubble precursors”, F. Corni, G. Calzolari, S. Frabboni, C. Nobili, G. Ottaviani, and R. ToniniThe interaction of helium atoms with the radiation damage imparted to (100) silicon single crystal by He+ implantation at 5 × 1015 cm2, 20 keV, and liquidnitrogen temperature is investigated by means of various complementary techniques during and... (Read more)
- 971. J. Appl. Phys. 85, 1234 (1999) , “Carrier trapping in iron-doped GaInP”, A. snaTime-resolved photoluminescence decay caused by carrier trapping to the deep Fe level has been studied in epitaxial GaInP. Carrier trapping time is found to be strongly dependent on the Fe concentration up to 1 × 1018 cm 3. The electron capture cross section for... (Read more)
- 972. J. Appl. Phys. 85, 1216 (1999) , “Analysis of conduction mechanisms in annealed n-Si1 – xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations”, L. F. Marsal, J. Pallares, and X. CorreigWe fabricated and characterized annealed n-type amorphous Si1 xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA ~ 1016, 1018, and... (Read more)
- 973. J. Appl. Phys. 85, 1105 (1999) , “Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs”, R. L. Maltez, Z. Liliental-Weber, and J. WashburnCharacteristic 1.54 µm Er3 + emission has been observed from Er-implanted and annealed, low-temperature grown GaAs Be doped and undoped samples. Er plateau implantations (480, 155, and 40 keV successive implants) were performed at 300 °C covering calculated Er... (Read more)
- 974. J. Appl. Phys. 85, 1063 (1999) , “Role of silicon impurities in the trapping of holes in KTiOPO4 crystals”, K. T. Stevens, S. D. Setzler, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to characterize a new hole trap in flux-grown KTiOPO4 crystals. This center is formed at room temperature when the crystals are exposed to either 60 kV x rays or a pulsed 355 nm laser beam. Principal g values measured at room temperature... (Read more)
- 975. J. Appl. Phys. 85, 105 (1999) , “Gallium implantation induced deep levels in n-type 6H–SIC”, M. Gong, S. Fung, and C. D. BelingTwo Ga-acceptor levels, located at EV + 0.31 eV and EV + 0.37 eV, respectively, have been observed in the gallium implantation manufactured p+n diodes using deep level transient spectroscopy. The behavior of the implanted... (Read more)
- 976. Phys. Rev. Lett. 83, 5294 - 5297 (1999) , “Novel Muonium State in CdS”, J. M. Gil, H. V. Alberto, R. C. Vilão, J. Piroto Duarte, P. J. Mendes, L. P. Ferreira, N. Ayres de Campos, A. Weidinger, J. Krauser, Ch. Niedermayer, and S. F. CoxA new type of muonium defect center has been observed in undoped CdS below 20 K. The hyperfine interaction amounts only to approximately 10-4 of the vacuum value, and is shown to have axial symmetry along the Cd-S bond direction. Results suggest that the muon is close to the sulfur... (Read more)
- 977. Phys. Rev. Lett. 83, 4582 - 4585 (1999) , “Alloy Splitting of Gold and Platinum Acceptor Levels in SiGe”, L. Dobaczewski, K. Gościński, K. Bonde Nielsen, A. Nylandsted Larsen, J. Lundsgaard Hansen, and A. R. PeakerLaplace transform deep level transient spectroscopy was used to study the acceptor levels of platinum and gold diffused into dilute (0– 5% Ge) SiGe alloys. We show that Ge atoms in the first and in the second shell of atoms surrounding the impurity perturb the electronic properties of the Au and... (Read more)
- 978. Phys. Rev. Lett. 83, 4345 - 4348 (1999) , “First-Principles Study of Boron Diffusion in Silicon”, W. Windl, M. M. Bunea, R. Stumpf, S. T. Dunham, and M. P. MasquelierIn this Letter we investigate boron diffusion as a function of the Fermi-level position in crystalline silicon using ab initio calculations. Based on our results, a new mechanism for B diffusion mediated by Si self-interstitials is proposed. Rather than kick out of B into a mobile channel, we find a... (Read more)
- 979. Phys. Rev. Lett. 83, 4140 - 4143 (1999) , “Spontaneous Symmetry Breaking of Acceptors in “Blue” Diamonds”, Hyunjung Kim, A. K. Ramdas, S. Rodriguez, M. Grimsditch, and T. R. AnthonyThe electronic Raman transition between the lower 1s(p3/2) and the higher 1s(p1/2) state of a hole bound to a boron acceptor in diamond, examined under the high resolution of a Fabry-Pérot interferometer, reveals a doublet separated by (0.81±0.15) cm-1, indicative... (Read more)
- 980. Phys. Rev. Lett. 83, 3852 - 3855 (1999) , “Large Pairing Jahn-Teller Distortions Around Divacancies in Crystalline Silicon”, Serdar Öğüt and James R. ChelikowskyAb initio atomic and electronic structures of neutral (V2 0) and charged (V2 +,V2 -,V2 2-) Si divacancies are investigated using bulk-terminated clusters with up to ≈320 Si atoms. For the first... (Read more)
- 981. Phys. Rev. Lett. 83, 372 - 375 (1999) , “Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica”, Peter E. Blöchl and James H. StathisHydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, are analyzed using first-principles calculations. Energetics and charge-state levels of oxygen vacancies, hydrogen, and their complexes in the silica framework are mapped out. The neutral hydrogen... (Read more)
- 982. Phys. Rev. Lett. 83, 3254 - 3257 (1999) , “Magnetospectroscopy of Acceptors in “Blue” Diamonds”, Hyunjung Kim, A. K. Ramdas, S. Rodriguez, M. Grimsditch, and T. R. AnthonyThe Zeeman effect of the Δ′ [1s(p3/2):Γ8→1s(p1/2):Γ7] Raman line of boron acceptors in diamond exhibits the predicted eight components and four transitions within the Γ8 multiplet, discovered under diverse polarization... (Read more)
- 983. Phys. Rev. Lett. 83, 1990 - 1993 (1999) , “Thermally Activated Reorientation of Di-interstitial Defects in Silicon”, Jeongnim Kim, Florian Kirchhoff, Wilfried G. Aulbur, John W. Wilkins, Furrukh S. Khan, and Georg KresseWe propose a di-interstitial model for the P6 center commonly observed in ion-implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to... (Read more)
- 984. Phys. Rev. Lett. 83, 1799 - 1801 (1999) , “Planar Self-Interstitial in Silicon”, M. M. De Souza, C. K. Ngw, M. Shishkin, and E. M. Sankara NarayananThe aim of this paper is to demonstrate, for the first time, the possible existence of planar point defect silicon self-interstitials in the {311} plane. The results offer a plausible explanation as to why self-interstitials aggregate to form {311} defect clusters during ion implantation. These... (Read more)
- 985. Phys. Rev. Lett. 83, 1351 - 1354 (1999) , “Symmetry of Molecular H2 in Si from a Uniaxial Stress Study of the 3618.4 cm-1 Vibrational Line”, J. Anna Zhou and Michael StavolaUniaxial stress has been used in conjunction with vibrational spectroscopy to probe the structure and microscopic properties of interstitial H2 in Si. The stress splitting pattern observed for the 3618.4 cm -1 line assigned to H2 is consistent with triclinic (... (Read more)
- 986. Phys. Rev. Lett. 82, 4870 - 4873 (1999) , “Theory of the Nucleation, Growth, and Structure of Hydrogen-Induced Extended Defects in Silicon”, F. A. Reboredo, M. Ferconi, and S. T. PantelidesImplantation and plasma indiffusion of H in crystalline Si are known to induce planar defects (platelets) whose structure has remained elusive. We report extensive first-principles calculations that reveal mechanisms for the nucleation and growth of aggregates of second-neighbor hydrogenated... (Read more)
- 987. Phys. Rev. Lett. 82, 3819 - 3822 (1999) , “Direct Evidence of Phosphorus-Defect Complexes in n-Type Amorphous Silicon and Hydrogenated Amorphous Silicon”, Mihail P. Petkov, Marc H. Weber, Kelvin G. Lynn, Richard S. Crandall, and Vinita J. GhoshWe use positron annihilation spectroscopy (PAS) to identify the phosphorus-defect complex (*D-) in n-type hydrogenated amorphous Si ( a-Si:H). The positrons are attracted and localized at the small open volume associated with the dangling bond defects. The radiation detected... (Read more)
- 988. Phys. Rev. Lett. 82, 3276 - 3279 (1999) , “Universality of the Bond-Breaking Mechanism in Defect Bistability: Observation of Open Volume in the Deep States of In and Ga in CdF2”, J. Nissilä, K. Saarinen, P. Hautojärvi, A. Suchocki, and J. M. LangerPositron annihilation experiments reveal an open-volume defect in the deep state atomic configurations of bistable donors In and Ga in CdF2. The size of the open volume is at least half of a monovacancy. The results are similar to those obtained previously for the DX centers in the... (Read more)
- 989. Phys. Rev. Lett. 82, 2552 - 2555 (1999) , “Residual Native Shallow Donor in ZnO”, D. C. Look, J. W. Hemsky, and J. R. SizeloveHigh-energy electron irradiation in ZnO produces shallow donors at about EC-30 meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial ZnI or a... (Read more)
- 990. Phys. Rev. Lett. 82, 2111 - 2114 (1999) , “Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon”, A. Resende, R. Jones, S. Öberg, and P. R. BriddonFirst-principles local-density formalism cluster theory is used to determine the structure of Au- and Ag-hydrogen complexes in Si. The theory, with an empirical correction, is then applied to extract their donor and acceptor levels and these are compared with capacitance transient spectroscopic... (Read more)
- 991. Phys. Rev. Lett. 82, 1883 - 1886 (1999) , “Identification of Vacancy-Impurity Complexes in Highly n-Type Si”, K. Saarinen, J. Nissilä, H. Kauppinen, M. Hakala, M. J. Puska, P. Hautojärvi, and C. CorbelWe show that the detailed atomic structure of vacancy-impurity complexes in Si can be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies complexed with a single impurity, V-P and V-As, are identified in electron irradiated Si. The... (Read more)
- 992. Phys. Rev. Lett. 82, 113 - 116 (1999) , “First-Principles Study of Structural Bistability in Ga- and In-Doped CdF2”, C. H. Park and D. J. ChadiWe have identified the microscopic structures for the shallow and deep donor states of Ga and In donor impurities in CdF2 through first-principles calculations. The deep state arises from a large [100]-axis atomic displacement of a donor. It has all the properties of a DX center; i.e., it... (Read more)
- 993. Appl. Phys. Lett. 73, 99 (1998) , “An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques”, M. P. Petkov, T. Marek, P. Asoka-Kumar, and K. G. LynnIn this letter, we examine the feasibility of applying positron annihilation spectroscopy to the study of hydrogenized amorphous silicon (a-Si:H)-based structures produced by chemical vapor deposition techniques. The positron probe, sensitive to open volume formations, is used to characterize... (Read more)
- 994. Appl. Phys. Lett. 73, 945 (1998) , “Hydrogen passivation of silicon carbide by low-energy ion implantation”, N. Achtziger, J. Grillenberger, and W. WitthuhnIon implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial α-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV 2H2... (Read more)
- 995. Appl. Phys. Lett. 73, 91 (1998) , “A deep level induced by gamma irradiation in Hg1–xCdxTe”, Xinwen Hu, Jiaxiong Fang, Qin Wang, Jun Zhao, Huiqing Lu, and Haimei GongAdmittance spectroscopy and deep-level transient spectroscopy measurements have been performed on n+-on-p Hg1xCdxTe (x = 0.595) planar photodiodes grown by improved zone melt method. After 1.0 Mrads gamma irradiation, a new... (Read more)
- 996. Appl. Phys. Lett. 73, 647 (1998) , “Deep-level transient spectroscopy of Si/Si1 – x – yGexCy heterostructures”, B. L. Stein and E. T. YuDeep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1 x yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed... (Read more)
- 997. Appl. Phys. Lett. 73, 52 (1998) , “Zinc and phosphorus co-implantation in indium phosphide”, Kin Man YuElectrical activation and dopant diffusion in Zn-implanted InP after rapid thermal annealing have been investigated. For an as-implanted Zn concentration of ~4×1019 cm3, only ~7% of the implanted Zn atoms formed electrically active shallow acceptors following a 950... (Read more)
- 998. Appl. Phys. Lett. 73, 508 (1998) , “Vacancy defects in thin-film La0.5Sr0.5CoO3 – observed by positron annihilation”, D. J. KeebleVacancy-related defects in laser ablated thin films of the conducting metaloxide La0.5Sr0.5CoO3 were detected using a variable-energy positron beam. The nonstoichiometry, δ, was altered by varying the oxygen partial pressure within the deposition... (Read more)
- 999. Appl. Phys. Lett. 73, 3896 (1998) , “Dissociation of the 1.014 eV photoluminescence copper center in silicon crystal”, M. NakamuraIn order to determine dissociation energy of the 1.014 eV photoluminescence (PL) Cu center in silicon crystal, decay of the PL intensity of the center by annealing samples at various temperatures was measured. The samples were prepared by contamination of Cu from Cu solution and heat treatment at... (Read more)
- 1000. Appl. Phys. Lett. 73, 3748 (1998) , “{311} defects in silicon: The source of the loops”, Jinghong Li and Kevin S. JonesThe annealing kinetics of extended defects in Si + -implanted Si have been investigated by in situ annealing plan-view transmission electron microscopy (TEM) samples in a TEM. A 100" align="middle"> Czochralski-grown silicon wafer was implanted with 100 keV Si + at the... (Read more)
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