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- 101. J. Appl. Phys. 101, 083529 (2007) , “Low temperature diffusion of impurities in hydrogen implanted silicon”, S. Personnic, K. K. Bourdelle, F. Letertre, A. Tauzin, F. Laugier, R. Fortunier, and H. KlockerThe effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen, carbon, and fluorine during low temperature, 450 °C, isothermal anneals. Their fast migration... (Read more)
- 102. J. Appl. Phys. 101, 073706 (2007) , “Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy”, M. Asghar, I. Hussain, H. S. Noor, F. Iqbal, Q. Wahab, and A. S. BhattiCharacterization of dominant electron trap in as-grown SiC epilayers has been carried out using deep level transient spectroscopy. Two electron traps E1 and Z1 at Ec−0.21 and Ec−0.61 are observed, respectively;... (Read more)
- 103. J. Appl. Phys. 101, 054511 (2007) , “Annealing of 60Co gamma radiation-induced damage in n-GaN Schottky barrier diodes”, G. A. Umana-Membreno, J. M. Dell, G. Parish, B. D. Nener, L. Faraone, S. Keller, and U. K. MishraThe effect of isochronal thermal annealing on Ni/n-GaN Schottky barrier diodes exposed to a total accumulated gamma-ray dose of 21 Mrad(Si) has been investigated using capacitance-voltage (C-V) and current-voltage (I-V) measurements, while capacitance deep-level... (Read more)
- 104. J. Appl. Phys. 101, 053716 (2007) , “Compensation mechanism in high purity semi-insulating 4H-SiC”, W. C. Mitchel, William D. Mitchell, H. E. Smith, G. Landis, S. R. Smith, and E. R. GlaserA study of deep levels in high purity semi-insulating 4H-SiC has been made using temperature dependent Hall effect (TDH), thermal and optical admittance spectroscopies, and secondary ion mass spectrometry (SIMS). Thermal activation energies from TDH varied from a low of 0.55 eV to a high of... (Read more)
- 105. J. Appl. Phys. 101, 053709 (2007) , “Impacts of growth parameters on deep levels in n-type 4H-SiC”, Katsunori Danno, Tsutomu Hori, and Tsunenobu KimotoDeep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy. The Z1/2 and EH6/7 centers are dominant in epilayers grown with low C/Si ratios during chemical vapor deposition. By increasing the C/Si ratio, the... (Read more)
- 106. J. Appl. Phys. 101, 046107 (2007) , “Dopant dependence on passivation and reactivation of carrier after hydrogenation”, N. Fukata, S. Sato, H. Morihiro, K. Murakami, K. Ishioka, M. Kitajima, and S. HishitaThe formation of hydrogen (H)-related complexes and H effects on boron (B) and phosphorus (P) dopants was investigated in B- or P-doped silicon (Si) crystal treated with high concentration of H. The reactivation process of dopant carriers by annealing after hydrogenation was significantly different... (Read more)
- 107. Jpn. J. Appl. Phys. 46, L57 (2007) , “Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching”, Hisashi Shima, Fumiyoshi Takano, Yukio Tamai, Hiro Akinaga, and Isao H. Inoue.The resistance switching in Pt/Co–O/Pt trilayers has been successfully demonstrated. The trilayers were prepared by radio-frequency magnetron sputtering. The partial pressure of oxygen during sputtering and the post thermal process for the trilayer are crucial to realize the reproducible resistance switching. By adjusting oxygen partial pressure as well as post-annealing temperature and time, large resistance switching was steadily obtainable in both the as deposited and post-annealed Pt/Co–O/Pt trilayers. The resistance switching ratio exceeds 103, being sufficiently large for the resistance random access memory (RRAM). Co–O is regarded as a very promising oxide for RRAM having compatibilities with the conventional complementary metal–oxide semiconductor process. (Read more)
- 108. Phys. Rev. B 76, 233204 (2007) , “Room-temperature annealing of vacancy-type defect in high-purity n-type Si”, J. H. Bleka, E. V. Monakhov, B. G. Svensson, and B. S. AvsetElectron-irradiated p+-n−-n+ diodes produced from low-doped high-purity Si wafers were found, by deep-level transient spectroscopy (DLTS), to have a prominent defect, labeled E4, with an energy level 0.37 eV below the... (Read more)
- 109. Phys. Rev. B 76, 233202 (2007) , “Evidence of a second acceptor state of the E center in Si1−xGex”, K. Kuitunen, F. Tuomisto, and J. SlotteWe have found evidence of a second acceptor state of the E center in Si1−xGex by using positron annihilation spectroscopy. To achieve this, we studied proton irradiated n-type Si1−xGex with a Ge content... (Read more)
- 110. Phys. Rev. B 76, 214114 (2007) , “Biradical states of oxygen-vacancy defects in α-quartz”, R. I. Mashkovtsev, D. F. Howarth, and J. A. WeilSeveral radiation defects with effective electron spin S=1 have been observed in synthetic α-quartz, using room-temperature (RT) electron paramagnetic resonance (EPR) spectroscopy. It turns out that these defects had better be considered as biradicals, i.e., pairs of S=1/2... (Read more)
- 111. Phys. Rev. B 76, 195203 (2007) , “Zn interstitial related donors in ammonia-treated ZnO powders”, J. Sann, J. Stehr, A. Hofstaetter, D. M. Hofmann, A. Neumann, M. Lerch, U. Haboeck, A. Hoffmann, and C. ThomsenZnO powder heat treated in NH3 atmosphere was investigated by electron paramagnetic resonance, photoluminescence, and Raman spectroscopy. We find that the treatment creates Zn interstitials (Zni) and complexes of Zn interstitials and nitrogen atoms substituting oxygen... (Read more)
- 112. Phys. Rev. B 76, 165209 (2007) , “Theoretical study of small silicon clusters in 4H-SiC”, T. Hornos, N. T. Son, E. Janzén, and A. GaliWe have studied the small clusters of silicon and carbon interstitials by ab initio supercell calculations in 4H-SiC. We found that silicon interstitials can form stable and electrically active complexes with each other or with a carbon interstitial. Local vibration modes and... (Read more)
- 113. Phys. Rev. B 76, 165207 (2007) , “Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN”, F. Tuomisto, V. Ranki, D. C. Look, and G. C. FarlowWe have used positron annihilation spectroscopy to study the introduction and recovery of point defects introduced by 0.45 and 2 MeV electron irradiation at room temperature in n-type GaN. Isochronal annealings were performed up to 1220 K. We observe vacancy defects with specific lifetime... (Read more)
- 114. Phys. Rev. B 76, 165202 (2007) , “Native point defects in ZnO”, Anderson Janotti and Chris G. Van de WalleWe have performed a comprehensive first-principles investigation of native point defects in ZnO based on density functional theory within the local density approximation (LDA) as well as the LDA+U approach for overcoming the band-gap problem. Oxygen deficiency, manifested in the form of... (Read more)
- 115. Phys. Rev. B 76, 155203 (2007) , “Ab initio study of lithium and sodium in diamond”, E. B. Lombardi, Alison Mainwood, and K. OsuchInterstitial lithium and sodium have been suggested as alternatives to phosphorus to achieve shallow n-type doping of diamond. Experimental results have, however, been contradictory. We report ab initio density functional theory modeling of lithium and sodium in diamond and show that... (Read more)
- 116. Phys. Rev. B 76, 125205 (2007) , “Formation of electron traps in amorphous silica”, Matteo Farnesi Camellone, Joachim C. Reiner, Urs Sennhauser, and Louis SchlapbachThe capture of an electron by a silicon atom in a defect-free bulk of amorphous silica (a-SiO2) has been investigated. Ab initio constrained dynamics has been applied to evaluate the energy barrier. The computed energy barrier involved in the mechanism was found to be 0.23 ... (Read more)
- 117. Phys. Rev. B 76, 125204 (2007) , “Interstitial Fe in Si and its interactions with hydrogen and shallow dopants”, M. Sanati, N. Gonzalez Szwacki, and S. K. EstreicherThe properties of interstitial iron in crystalline silicon and its interactions with hydrogen, shallow acceptors (B, Al, Ga, In, and Tl), and shallow donors (P and As) are calculated from first-principles in periodic supercells. The interactions between the {Fe,B} pair and interstitial hydrogen are... (Read more)
- 118. Phys. Rev. B 76, 075204 (2007) , “Density functional simulations of silicon-containing point defects in diamond”, J. P. Goss, P. R. Briddon, and M. J. ShawSilicon impurities in diamond lead to the appearance of the well known system of 12 lines around 1.681 eV, thought to arise from the silicon-vacancy complex. This system is produced by various treatments suggestive of other silicon-related centers in the material. In order to elucidate possible... (Read more)
- 119. Phys. Rev. B 76, 045203 (2007) , “Metastable Frenkel pairs and the W11–W14 electron paramagnetic resonance centers in diamond”, J. P. Goss, M. J. Rayson, P. R. Briddon, and J. M. BakerDiamond is a material that shows great promise for particle detection applications. However, under irradiation with energetic particles, many thermally stable defects are created, made up of lattice vacancies, self-interstitials, and complexes with impurities. Relatively distant Frenkel... (Read more)
- 120. Phys. Rev. B 75, 245206 (2007) , “Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation”, Z. Q. Chen, S. J. Wang, M. Maekawa, A. Kawasuso, H. Naramoto, X. L. Yuan, and T. SekiguchiVacancy-type defects in as-grown ZnO single crystals have been identified using positron annihilation spectroscopy. The grown-in defects are supposed to be zinc vacancy (VZn)-related defects, and can be easily removed by annealing above 600 °C. VZn-related... (Read more)
- 121. Phys. Rev. B 75, 155204 (2007) , “Defects and carrier compensation in semi-insulating 4H-SiC substrates”, N. T. Son, P. Carlsson, J. ul Hassan, B. Magnusson,, and E. JanzénElectron paramagnetic resonance (EPR) studies revealed that vacancies (VC and VSi), carbon vacancy-antisite pairs (VCCSi) and the divacancy (VCVSi) are common defects in high-purity... (Read more)
- 122. Phys. Rev. B 75, 155202 (2007) , “Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon”, M. Mikelsen, J. H. Bleka, J. S. Christensen, E. V. Monakhov, B. G. Svensson, J. Härkönen, and B. S. AvsetAfter low dose electron irradiation, annealing kinetics of divacancy-oxygen (V2O) and vacancy-oxygen (VO) complexes in carbon-lean n-type magnetic Czochralski (MCZ) and diffusion-oxygenated float-zone (DOFZ) Si samples has been studied in detail. The samples were of n type... (Read more)
- 123. Phys. Rev. B 75, 035210 (2007) , “Self- and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations”, H. BrachtDopant diffusion experiments in semiconductors yield the mobility of the element of interest and information about the possible mechanisms of atomic diffusion. In many cases the diffusion is described on the basis of Fick's law of diffusion, but this treatment is often too simple. In this paper,... (Read more)
- 124. Phys. Rev. Lett. 99, 175502 (2007) , “Self-Interstitial in Germanium”, A. Carvalho, R. Jones, C. Janke, J. P. Goss, P. R. Briddon, J. Coutinho, and S. ÖbergLow-temperature radiation damage in n- and p-type Ge is strikingly different, reflecting the charge-dependent properties of vacancies and self-interstitials. We find, using density functional theory, that in Ge the interstitial is bistable, preferring a split configuration when neutral... (Read more)
- 125. Phys. Rev. Lett. 99, 136801 (2007) , “Electron Trapping at Point Defects on Hydroxylated Silica Surfaces”, Livia Giordano, Peter V. Sushko, Gianfranco Pacchioni, and Alexander L. ShlugerThe origin of electron trapping and negative charging of hydroxylated silica surfaces is predicted based on accurate quantum-mechanical calculations. The calculated electron affinities of the two dominant neutral paramagnetic defects, the nonbridging oxygen center, Si-O•, and the... (Read more)
- 126. Phys. Rev. Lett. 99, 085502 (2007) , “Nature of Native Defects in ZnO”, F. A. Selim, M. H. Weber, D. Solodovnikov, and K. G. LynnThis study revealed the nature of native defects and their roles in ZnO through positron annihilation and optical transmission measurements. It showed oxygen vacancies are the origin for the shift in the optical absorption band that causes the red or orange coloration. It also revealed experimental... (Read more)
- 127. phys. stat. sol. (b) 244, 437 (2007) , Wiley InterScience , “Thermoelectric properties and phase transitions of II-VI semiconductors at ultrahigh pressure”, V.V. Shchennikov, S.V. OvsyannikovThe high-pressure phase transitions in II-VI semiconductors (HgTe, HgSe, HgS, HgO, CdTe, CdSe, CdS, ZnTe, ZnSe, ZnS, ZnO) are analyzed in light of recent findings. A contribution is emphasized of the thermoelectric power (Seebeck effect) technique to registration of new electronic phases and to... (Read more)
- 128. phys. stat. sol. (b) 244, 279 (2007) , Wiley InterScience , “High-pressure X-ray diffraction study of ternary and non-stoichiometric PbTe and PbSe crystals”, S.V. Ovsyannikov, V.V. Shchennikov, A.Y. Manakov, A.Y. Likhacheva, I.F. Berger, A.I. Ancharov, M.A. SheromovThe paper reports the pressure-induced phase transitions observed in ternary PbTe and PbSe compounds (Pb1-x Snx Te, Pb1-x Mnx Te, Pb1-x Snx Se) and non-stoichiometric PbTe ones... (Read more)
- 129. Appl. Phys. Lett. 89, 242113 (2006) , “Thermally stimulated current studies on deep levels in hydrothermally grown single crystal ZnO bulk”, K. Kuriyama, M. Ooi, K. Matsumoto, and K. KushidaThe evaluation of the deep levels in hydrothermally grown ZnO single crystal bulk is studied using a thermally stimulated current (TSC) method with excitation above (below) the band gap. Two broad TSC spectra are resolved by four traps, P1 (165 meV), P2 (255 ... (Read more)
- 130. Appl. Phys. Lett. 89, 152103 (2006) , “Inherent density of point defects in thermal tensile strained (100)Si/SiO2 entities probed by electron spin resonance”, A. Stesmans, P. Somers, V. V. Afanas'ev, C. Claeys, and E. SimoenAn electron spin resonance analysis has been carried out of the intrinsic point defects in (100)Si/SiO2 entities thermally grown at 800 °C on biaxial tensile strained Si (s-Si). As compared to coprocessed standard (100)Si/SiO2, a significant reduction (>50%) is... (Read more)
- 131. Appl. Phys. Lett. 89, 151923 (2006) , “Variable core model and the Peierls stress for the mixed (screw-edge) dislocation”, Vlado A. Lubarda and Xanthippi MarkenscoffA variable core model of a moving crystal dislocation is proposed and used to derive an expression for the Peierls stress. The dislocation width varies periodically as a dislocation moves through the lattice, which leads to an expression for the Peierls stress in terms of the difference of the total... (Read more)
- 132. Appl. Phys. Lett. 89, 112107 (2006) , “Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy”, Juan A. Jiménez Tejada, Pablo Lara Bullejos, Juan A. López Villanueva, Francisco M. Gómez-Campos, Salvador Rodríguez-Bolívar, and M. Jamal DeenRecombination centers in thin asymmetrical p-n junctions were analyzed in the context of capacitance transient experiments. The combined effect of the thin low-doped region of the junction and the nonzero value of the occupation factor of the recombination center in the depletion layer... (Read more)
- 133. Appl. Phys. Lett. 88, 261906 (2006) , “Relationship between binding site and pressure dependence for defect-hydrogen complexes in ZnO”, M. G. Wardle, J. P. Goss, and P. R. BriddonThe effect of hydrostatic pressure on local vibrational modes of hydrogen defects in ZnO has been studied by first-principles methods. We find that the sign and magnitude of the frequency shift rate are strongly dependent on the local environment. In the case of isolated hydrogen, the bond centered... (Read more)
- 134. Appl. Phys. Lett. 88, 242112 (2006) , “High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer”, Q. Wang and Manmohan DaggubatiHigh temperature nitrogen annealing induced interstitial oxygen (Oi) precipitation has been investigated in silicon epitaxial layers (epilayers) grown on heavily arsenic-doped Czochralski silicon wafers. Both transmission electron microscopy and secondary ion mass spectrometry data... (Read more)
- 135. Appl. Phys. Lett. 88, 101918 (2006) , “Alternating layers of vacancy-type and interstitial-type defects in Ge ion implanted silicon”, R. KöglerThe defect structure of Ge-implanted and annealed silicon was investigated. A stacked structure of alternating layers of vacancy-type defects (cavities) and interstitial-type defects (dislocation loops) was detected. These defects form a substructure within the basic dual structure consisting of a... (Read more)
- 136. Appl. Phys. Lett. 88, 101904 (2006) , “Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy”, D. Dagnelund, I. A. Buyanova, T. Mchedlidze, and W. M. ChenRadiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy is significantly improved by reduced nitrogen ion bombardment during the growth. Based on the results of temperature-dependent photoluminescence (PL) and optically detected magnetic resonance... (Read more)
- 137. Appl. Phys. Lett. 88, 062112 (2006) , “Electron paramagnetic resonance of a donor in aluminum nitride crystals”, S. M. Evans, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectra are obtained from a donor in aluminum nitride (AlN) crystals. Although observed in as-grown crystals, exposure to x rays significantly increases the concentration of this center. ENDOR identifies a strong... (Read more)
- 138. Appl. Phys. Lett. 88, 023113 (2006) , “Implantation of labelled single nitrogen vacancy centers in diamond using 15N”, J. R. Rabeau and P. ReichartNitrogen-vacancy (NV) color centers in diamond were created by implantation of 7 keV 15N(I=1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV centers. The hyperfine... (Read more)
- 139. J. Appl. Phys. 100, 113531 (2006) , “Impact of silicon incorporation on the formation of structural defects in AlN”, M. Hermann, F. Furtmayr, F. M. Morales, O. Ambacher, M. Stutzmann, and M. EickhoffThe impact of Si impurities on the structural properties of AlN, grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire is studied. Under nitrogen-rich growth conditions silicon can be homogeneously incorporated up to Si concentrations of [Si]=5.2×1021... (Read more)
- 140. J. Appl. Phys. 100, 034309 (2006) , “Critical size for defects in nanostructured materials”, Jagdish NarayanThis paper addresses some of the fundamental issues and critical advantages in reducing the grain size/feature size to the nanoscale regime. We find that as the grain size or feature size is reduced, there is a critical size below which the defect content can be reduced virtually to zero. This... (Read more)
- 141. J. Appl. Phys. 100, 023512 (2006) , “Stacking faults and twin boundaries in fcc crystals determined by x-ray diffraction profile analysis”, Levente Balogh, Gábor Ribárik, and Tamás UngárA systematic procedure is developed to evaluate the density of planar defects together with dislocations and crystallite or subgrain size by x-ray line profile analysis in fcc crystals. Powder diffraction patterns are numerically calculated by using the DIFFAX software for intrinsic and extrinsic... (Read more)
- 142. J. Appl. Phys. 99, 093509 (2006) , “Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing”, A. Bentzen, A. Holt, R. Kopecek, G. Stokkan, J. S. Christensen, and B. G. SvenssonWe have investigated the gettering of transition metals in multicrystalline silicon wafers during a phosphorus emitter diffusion for solar cell processing. The results show that mainly regions of high initial recombination lifetime exhibit a significant lifetime enhancement upon phosphorus diffusion... (Read more)
- 143. J. Appl. Phys. 99, 064502 (2006) , “High concentration in-diffusion of phosphorus in Si from a spray-on source”, A. Bentzen, A. Holt, J. S. Christensen, and B. G. SvenssonHigh concentration in-diffusion of phosphorus in both Czochralski grown and solar grade multicrystalline Si from a spray-on liquid source has been studied by secondary ion mass spectrometry and electrochemical capacitance-voltage profiling. By extraction of the concentration dependent effective... (Read more)
- 144. J. Phys.: Condens. Matter 18, L551 (2006) , IOP Publishing , “Observation of a new high-pressure semimetal phase of GaAs from pressure dependence of the thermopower”, S.V. Ovsyannikov, V.V. ShchennikovWe report the use of the thermopower technique (Seebeck effect) as an effective tool for discovery of 'hidden' (for standard techniques, like x-ray, synchrotron, Raman, etc) phases of substances. Applying the thermopower technique to a set of GaAs single crystals pressurized in a sintered diamond... (Read more)
- 145. Jpn. J. Appl. Phys. 45, L991 (2006) , “Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides”, Kentaro Kinoshita, Tetsuro Tamura, Masaki Aoki, Yoshihiro Sugiyama and Hitoshi TanakaBoth lowering the “reset” current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. These requirements have been satisfied by using a hetero junction structure consisting of transition metal oxides, NiOy/TiOx/Pt, combining direct contact with the NiOy using a W-probe. It is considered that this configuration brought about extreme downsizing of the effective area of both the top and bottom electrodes for NiOy and thus decreased the number of filaments formed in “forming” process. Reducing the number of filaments is essential to these issues. (Read more)
- 146. Phys. Rev. B 74, 155429 (2006) , “Effect of nitrogen on the electronic properties of ultrananocrystalline diamond thin films grown on quartz and diamond substrates”, P. Achatz, O. A. Williams, P. Bruno, D. M. Gruen, J. A. Garrido, and M. StutzmannThe electronic transport properties of ultrananocrystalline diamond thin films grown from an argon-rich Ar/CH4 microwave plasma have been investigated in the temperature range from 300 up to 700 K and as a function of nitrogen added to the gas phase (from 0 to 20%). The influence of... (Read more)
- 147. Phys. Rev. B 74, 134418 (2006) , “Electron spin resonance and its implication on the maximum nuclear polarization of deuterated solid target materials”, J. Heckmann, W. Meyer, E. Radtke, G. Reicherz, and S. GoertzESR spectroscopy is an important tool in polarized solid target material research, since it allows us to study the paramagnetic centers, which are used for the dynamic nuclear polarization (DNP). The polarization behavior of the different target materials is strongly affected by the properties of... (Read more)
- 148. Phys. Rev. B 73, 165212 (2006) , “Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques”, Karl Johnston, Martin O. Henry, Deirdre McCabe, Enda McGlynn, Marc Dietrich, Eduardo Alves, and Matthew XiaThe results of photoluminescence measurements on ZnO implanted with stable and radioactive isotopes of Zn and Ga are presented. The donor-related exciton feature I8 at 3.3600 eV is suggested to be due to bound exciton recombination at Ga donors. The I1 line at... (Read more)
- 149. Phys. Rev. B 73, 165209 (2006) , “Vacancy-impurity pairs in relaxed Si1–xGex layers studied by positron annihilation spectroscopy”, M. Rummukainen, J. Slotte, K. Saarinen, H. H. Radamson, J. Hållstedt, and A. Yu. KuznetsovPositron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be... (Read more)
- 150. Phys. Rev. B 73, 165202 (2006) , “Radiation damage in silicon exposed to high-energy protons”, Gordon Davies, Shusaku Hayama, Leonid Murin, Reinhard Krause-Rehberg, Vladimir Bondarenko, Asmita Sengupta, Cinzia Davia, and Anna KarpenkoPhotoluminescence, infrared absorption, positron annihilation, and deep-level transient spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 GeV/c protons in crystalline silicon. The irradiation doses and the concentrations of carbon and oxygen in the samples... (Read more)
- 151. Phys. Rev. B 73, 134112 (2006) , “EPR g-tensor of paramagnetic centers in yttria-stabilized zirconia from first-principles calculations”, F. Pietrucci, M. Bernasconi, C. Di Valentin, F. Mauri, and C. J. PickardIn order to assign the defect responsible for the experimental electron paramagnetic resonance (EPR) signal with trigonal symmetry (T center), we have studied the properties of different paramagnetic centers in yttria-stabilized cubic zirconia by computing the EPR g-tensor from density... (Read more)
- 152. Phys. Rev. B 73, 125203 (2006) , “Origin of brown coloration in diamond”, L. S. Hounsome, R. Jones, P. M. Martineau, D. Fisher, M. J. Shaw, P. R. Briddon, and S. ÖbergMeasurements of the absorption spectra of brown natural type IIa diamond as well as brown nitrogen-doped CVD diamond are reported. These are largely featureless and increase almost monotonically from about 15.5 eV. It is argued that the brown coloration is due to an extended defect and not to... (Read more)
- 153. Phys. Rev. B 73, 085204 (2006) , “Theory of boron aggregates in diamond: First-principles calculations”, J. P. Goss and P. R. BriddonIt is well known that nitrogen forms aggregates in diamond. However, little is known regarding aggregation of boron, an impurity that can be incorporated in very high concentrations. In this paper we present the results of first-principles calculations regarding the structure and properties of... (Read more)
- 154. Phys. Rev. B 73, 081203(R) (2006) , “Muonium in InSb: Shallow acceptor versus deep trap or recombination center”, V. G. Storchak, D. G. Eshchenko, J. H. Brewer, S. P. Cottrell, and R. L. LichtiThe bound state of a muonium atom has been detected in both n-type and p-type InSb using a high-field µSR technique. The hyperfine constant obtained for this isotropic center (AT=2464±1 MHz), roughly half that of a Mu atom in vacuum, is... (Read more)
- 155. Phys. Rev. B 73, 045208 (2006) , “Characterization of Eδ and triplet point defects in oxygen-deficient amorphous silicon dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of γ-ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (Eγ, Eδ, and triplet) and one... (Read more)
- 156. Phys. Rev. B 73, 024117 (2006) , “Defect properties and p-type doping efficiency in phosphorus-doped ZnO”, Woo-Jin Lee, Joongoo Kang, and K. J. ChangBased on first-principles pseudopotential calculations, we investigated the electronic structure of various P-related defects in ZnO and the p-type doping efficiency for two forms of P dopant sources such as P2O5 and Zn3P2. As compared to N dopants,... (Read more)
- 157. Phys. Rev. Lett. 97, 256603 (2006) , “Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance”, Kazuhiro Marumoto, Shin-ichi Kuroda, Taishi Takenobu,, and Yoshihiro IwasaAn electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to... (Read more)
- 158. Phys. Rev. Lett. 96, 205504 (2006) , “First-Principles Study of the Diffusion of Hydrogen in ZnO”, M. G. Wardle, J. P. Goss, and P. R. BriddonZinc oxide, a wide-gap semiconductor, typically exhibits n-type conductivity even when nominally undoped. The nature of the donor is contentious, but hydrogen is a prime candidate. We present ab initio calculations of the migration barrier for H, yielding a barrier of less than ~0.5 ... (Read more)
- 159. Phys. Rev. Lett. 96, 196402 (2006) , “Nitrogen Vacancies as Major Point Defects in Gallium Nitride”, M. G. Ganchenkova and R. M. NieminenWe present results of ab initio calculations for vacancies and divacancies in GaN. Particular attention is paid to nitrogen vacancies and mixed Ga-N divacancies in negatively charged states, which in n-type GaN are found to be energetically comparable with gallium vacancies. We also... (Read more)
- 160. Phys. Rev. Lett. 96, 035505 (2006) , “Mutual Passivation of Donors and Isovalent Nitrogen in GaAs”, Jingbo Li, Pierre Carrier, Su-Huai Wei, Shu-Shen Li, and Jian-Bai XiaWe study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, SiGa, GeGa, SAs, and SeAs, bind to N in GaAs:N, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such... (Read more)
- 161. Physica B 376-377, 177 (2006) , Elsevier , “Micro-characterisation of Si wafers by high-pressure thermopower technique”, S.V. Ovsyannikov, V.V. Shchennikov Jr, N.A. Shaydarova, V. V. Shchennikov, A. Misiuk, D. Yang, I.V. Antonova, S.N. ShaminIn the present work a set of Czochralski-grown silicon wafers (Cz–Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region (0-20GPa). The shifts were observed in pressure of semiconductor–metal phase transition Pt determined from the S(P) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen cO (which is always present in Cz–Si) on the other hand. The dependence exhibited a maximum of Pt near cO~9×1017cm-3. (Read more)
- 162. Appl. Phys. Lett. 87, 261909 (2005) , “Generation of single color centers by focused nitrogen implantation”, J. Meijer and B. BurchardSingle defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An... (Read more)
- 163. Appl. Phys. Lett. 87, 252113 (2005) , “Electrical activation of the Fe2+/3+ trap in Fe-implanted InP”, B. FraboniWe have studied the electrical activation of the Fe2+/3+ trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the... (Read more)
- 164. Appl. Phys. Lett. 87, 252102 (2005) , “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy”, F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. LiuWe investigated photoluminescence (PL) from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si (100) by molecular-beam epitaxy. Well-resolved PL spectra were obtained from completely dopant-activated samples with hole concentrations above 1.0×1018 ... (Read more)
- 165. Appl. Phys. Lett. 87, 242903 (2005) , “Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature”, V. Ligatchev, Rusli, and Zhao PanDensity of defect states of aluminum nitride (AlN) films deposited by rf magnetron sputtering on 100-oriented silicon (Si) and 4H-silicon carbide (4H-SiC) have been investigated using the deep-level-transient-spectroscopy technique. The films were grown at room temperature with varying nitrogen flow... (Read more)
- 166. Appl. Phys. Lett. 87, 242103 (2005) , “Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions”, Marian Nanu, Florence Boulch, Joop Schoonman, and Albert GoossensDeep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2|CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated.... (Read more)
- 167. Appl. Phys. Lett. 87, 182115 (2005) , “Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy”, Z.-Q. Fang and D. C. LookAlGaN/GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with... (Read more)
- 168. Appl. Phys. Lett. 87, 172103 (2005) , “The antimony-vacancy defect in p-type germanium”, C. E. Lindberg, J. Lundsgaard Hansen, P. Bomholt, A. Mesli, K. Bonde Nielsen, and A. Nylandsted LarsenGe-n+p mesa diodes have been produced in 2-Ω cm single crystals using a molecular-beam epitaxy (MBE) process to grow the Sb-doped epitaxial Ge n+-top layer. The diodes are characterized by a leakage current at room temperature of... (Read more)
- 169. Appl. Phys. Lett. 87, 161906 (2005) , “Vacancy formation in GaAs under different equilibrium conditions”, V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-RehbergDefect properties of undoped semiinsulating and silicon doped n-type GaAs annealed at different arsenic vapor pressures have been studied by means of positron annihilation and Hall effect measurements. In both types of samples, formation of monovacancylike defects during annealing was... (Read more)
- 170. Appl. Phys. Lett. 87, 151909 (2005) , “Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration”, H. Ch. Alt and Y. V. GomeniukFourier-transform infrared absorption measurements have been carried out on nitrogen-doped Czochralski-grown silicon crystals after thermal annealing at 600 °C. The strength of the electronic transitions due to NO related shallow donors shows a square root dependence on the nitrogen... (Read more)
- 171. Appl. Phys. Lett. 87, 122102 (2005) , “Oxygen vacancies in ZnO”, Anderson Janotti and Chris G. Van de WalleThe electronic properties of ZnO have traditionally been explained by invoking intrinsic defects. In particular, the frequently observed unintentional n-type conductivity has often been attributed to oxygen vacancies. We report first-principles calculations showing that the oxygen vacancy... (Read more)
- 172. Appl. Phys. Lett. 87, 091910 (2005) , “Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam”, Z. Q. Chen, M. Maekawa, and A. KawasusoZnO crystals were implanted with N+, O+, and Al+, and co-implanted with O+/N+ and Al+/N+ ions. Positron annihilation measurements indicate introduction of vacancy clusters upon implantation. In the N+-implanted... (Read more)
- 173. Appl. Phys. Lett. 87, 051911 (2005) , “The origin of n-type conductivity in undoped In2O3”, Takumi Tomita, Kazuyoshi Yamashita, and Yoshinori HayafujiThis study explores the origin of the native donor in undoped In2O3. The electronic structure of various point defects in In2O3 clusters is studied using the first-principles molecular orbital calculation. The results show that an oxygen vacancy cannot act... (Read more)
- 174. Appl. Phys. Lett. 87, 032107 (2005) , “Interface traps and dangling-bond defects in (100)Ge/HfO2”, V. V. Afanas'ev, Y. G. Fedorenko, and A. StesmansCombined electrical and electron spin resonance analysis reveals dramatic differences in the interface defect properties of the (100)Ge/GeOxNy/HfO2 and (100)Ge/GeO2 interfaces from the seemingly similar interfaces of (100)Si with the... (Read more)
- 175. Appl. Phys. Lett. 86, 261906 (2005) , “Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation”, Michael R. Hogsed and Yung Kee YeoElectrical properties of defects induced in n-type molecular-beam-epitaxial-grown Al0.14Ga0.86N are studied using deep-level transient spectroscopy (DLTS) to explore the radiation tolerance of AlGaN-based electronic and optoelectronic devices. It has been found that four... (Read more)
- 176. Appl. Phys. Lett. 86, 222110 (2005) , “Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate”, I. P. Vorona, T. Mchedlidze, M. Izadifard, I. A. Buyanova, and W. M. ChenDilute-nitride Ga0.44In0.56NyP1y alloys with y=00.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic... (Read more)
- 177. Appl. Phys. Lett. 86, 171102 (2005) , “Optical observation of donor-bound excitons in hydrogen-implanted ZnO”, J.-K. Lee and M. NastasiThe optical and structural properties of H or He implanted ZnO were investigated using low temperature photoluminescence (PL) and infrared spectroscopy (IR). H implantation is shown to influence the relative luminescence intensities of the donor bound excitons, enhancing the 3.361 eV peak, and... (Read more)
- 178. Appl. Phys. Lett. 86, 162109 (2005) , “Electronic transitions at defect states in Cz p-type silicon”, A. Castaldini, D. Cavalcoli, and A. CavalliniPoint and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical and optical methods. Different materials (oxygen precipitated and/or deformed Cz Si and Fz Si) were examined in order to separate the role of oxygen... (Read more)
- 179. Appl. Phys. Lett. 86, 152111 (2005) , “Electrical characterization of Er- and Pr-implanted GaN films”, S. F. Song, W. D. Chen, Chunguang Zhang, Liufang Bian, and C. C. HsuHall, currentvoltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in... (Read more)
- 180. Appl. Phys. Lett. 86, 142107 (2005) , “Diffusion and dissociation mechanisms of vacancy-oxygen complex in silicon”, Masayuki Furuhashi and Kenji TaniguchiWe are examining diffusion mechanisms of the vacancy-oxygen complex (VO) in bulk Si using ab initio calculations based on a 64-atom supercell. We found two atomic mechanisms involved in the VO diffusion; one is caused by migration of an interstitial oxygen atom, another by migration of a... (Read more)
- 181. Appl. Phys. Lett. 86, 102108 (2005) , “Activation of shallow boron acceptor in C/B coimplanted silicon carbide: A theoretical study”, A. Gali, T. Hornos, and P. DeákAb initio supercell calculations have been carried out to investigate the complexes of boron acceptors with carbon self-interstitials in cubic silicon carbide. Based on the calculated binding energies, the complex formation of carbon interstitials with shallow boron acceptor and boron... (Read more)
- 182. Appl. Phys. Lett. 86, 081914 (2005) , “Photochromism of vacancy-related defects in thermochemically reduced α-Al2O3:Mg single crystals”, R. Ramírez, M. Tardío, and R. GonzálezOxygen vacancies and their aggregates are produced much more readily in Mg-doped α-Al2O3 than in undoped α-Al2O3 single crystals during thermochemical reduction at high temperatures. A reversible photochromic effect was discovered in Mg-doped... (Read more)
- 183. Appl. Phys. Lett. 86, 052109 (2005) , “Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence”, E. R. Glaser, B. V. Shanabrook, and W. E. CarlosThe conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating (SI) 4H-SiC substrates where all N shallow donors are compensated in the dark. The ratio of the nitrogen-bound exciton line... (Read more)
- 184. Appl. Phys. Lett. 86, 031915 (2005) , “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN”, F. Tuomisto and K. SaarinenWe have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga... (Read more)
- 185. J. Appl. Phys. 98, 093701 (2005) , “Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells”, H. S. Lee and M. YamaguchiPresented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08Ga0.92)0.52In0.48P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm1, which... (Read more)
- 186. J. Appl. Phys. 98, 093517 (2005) , “Large lattice relaxation deep levels in neutron-irradiated GaN”, S. Li, J. D. Zhang, C. D. Beling, K. Wang, and R. X. WangDeep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at... (Read more)
- 187. J. Appl. Phys. 98, 073502 (2005) , “Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy”, Y. W. HeoThe properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements... (Read more)
- 188. J. Appl. Phys. 98, 053704 (2005) , “Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon”, A. Armstrong and A. R. ArehartThe impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level... (Read more)
- 189. J. Appl. Phys. 98, 043709 (2005) , “Carrier compensation near tail region in aluminum- or boron-implanted 4H–SiC (0001)”, Y. Negoro, T. Kimoto, and H. MatsunamiElectrical behavior of implanted Al and B near implant-tail region in 4HSiC (0001) after high-temperature annealing has been investigated. Depth profiles of Al and B acceptors determined by capacitance-voltage characteristics are compared with those of Al and B atoms measured by... (Read more)
- 190. J. Appl. Phys. 98, 043518 (2005) , “Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide”, G. Alfieri, E. V. Monakhov, and B. G. SvenssonThe annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLTS). The nitrogen-doped epitaxial layers have been irradiated with 15-MeV electrons at room temperature... (Read more)
- 191. J. Appl. Phys. 98, 043507 (2005) , “Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon”, T. MchedlidzeThree electric-dipole spin-resonance signals, labeled TU7, TU8, and TU9, were detected after subjecting oxygen-rich silicon samples to two-step annealing procedures at 450 and 650 °C for prolonged times. The formation and structural evolution of large interstitial agglomerates, known as rodlike... (Read more)
- 192. J. Appl. Phys. 98, 033704 (2005) , “N interstitial and its interaction with substitutional Mg in p-type GaN”, R. R. Wixom and A. F. WrightDensity-functional theory and the generalized gradient approximation were utilized to investigate the local-energy-minimum configurations and formation energies of N interstitials and their interaction with substitutional Mg in p-type GaN. Along with previously proposed configurations of the... (Read more)
- 193. J. Appl. Phys. 98, 023704 (2005) , “Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry”, E. Trajkov and S. PrawerElectrically active defects and traps in sulfur-doped polycrystalline diamond films synthesized by microwave-assisted chemical-vapor deposition are evaluated using thermally stimulated conductivity measurements after ultraviolet (UV) illumination. The measurements are found to be consistent with the... (Read more)
- 194. J. Appl. Phys. 98, 013502 (2005) , “Near-band-edge slow luminescence in nominally undoped bulk ZnO”, T. Monteiro, A. J. Neves, M. C. Carmo, M. J. Soares, M. Peres, and J. WangWe report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite... (Read more)
- 195. J. Appl. Phys. 97, 123905 (2005) , “Electron paramagnetic resonance of Cr3+ in near-stoichiometric LiTaO3”, M. Loyo-Menoyo and D. J. KeebleElectron-paramagnetic-resonance (EPR) experiments on the dominant Cr3+ center in near-stoichiometric LiTaO3 crystals, grown by the double crucible Czochralski method, are reported. A near complete roadmap of EPR positions was obtained allowing an accurate determination of the... (Read more)
- 196. J. Appl. Phys. 97, 093517 (2005) , “Interaction of defects and H in proton-irradiated GaN(Mg, H)”, S. M. Myers and C. H. SeagerMagnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of... (Read more)
- 197. J. Appl. Phys. 97, 084913 (2005) , “Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition”, H. J. Chung, A. Y. Polyakov, S. W. Huh, S. Nigam, and M. SkowronskiHigh-purity 6H-SiC single crystals were grown by the halide chemical-vapor deposition process. Growth was performed in a vertical hot-wall reactor with a separate injection of a silicon precursor (silicon tetrachloride) and a carbon precursor (propane). Typical growth rates were between 100 and 300 ... (Read more)
- 198. J. Appl. Phys. 97, 063511 (2005) , “Positron beam studies of argon-irradiated polycrystal α-Zr”, Chunlan ZhouDoppler broadening spectroscopy was performed using a variable-energy positron beam to investigate the effect of defects induced by 150-keV Ar-ion-irradiated α-Zr bulk material. S parameter in the damaged layer of the as-irradiated sample induced by ion irradiation increased with the... (Read more)
- 199. J. Appl. Phys. 97, 056101 (2005) , “Triplet recombination at Pb centers and its implications for capture cross sections”, Felice Friedrich, Christoph Boehme, and Klaus LipsPulsed electrically detected magnetic resonance measurements are presented showing that Pb centers at the crystalline silicon (c-Si) (111) to silicon dioxide (SiO2) interface can cause recombination of strongly coupled spin pairs in singlet and triplet... (Read more)
- 200. J. Appl. Phys. 97, 043504 (2005) , “Photoluminescence of mechanically polished ZnO”, D. W. Hamby, D. A. Lucca, and M. J. KlopfsteinThe effects of mechanical polishing on the photoluminescence (PL) from each polar face of wurtzite-structure ZnO are presented. Differences observed for the 4.2 K PL of a mechanically polished surface when compared to that of a chemomechanically polished surface include broadened bound-exciton... (Read more)
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