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- 301. Phys. Rev. B 69, 245207 (2004) , “Donor level of bond-center hydrogen in germanium”, L. Dobaczewski, K. Bonde Nielsen, N. Zangenberg, B. Bech Nielsen, A. R. Peaker, and V. P. MarkevichWe apply Laplace deep-level transient spectroscopy (LDLTS) in situ after low-temperature proton implantation into crystalline n-type germanium and identify a deep metastable donor center. The activation energy of the donor emission is ~110 meV when extrapolated to zero electric field.... (Read more)
- 302. Phys. Rev. B 69, 193202 (2004) , “Optical and electrical properties of vanadium and erbium in 4H-SiC”, D. Prezzi, T. A. G. Eberlein, J.-S. Filhol, R. Jones, M. J. Shaw, P. R. Briddon, and S. ÖbergLocal-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While... (Read more)
- 303. Phys. Rev. B 69, 165215 (2004) , “Boron-hydrogen complexes in diamond”, J. P. Goss, P. R. Briddon, S. J. Sque, and R. JonesBoron in diamond traps hydrogen forming passive Bs-H pairs. Boron trapping two deuterium atoms has been speculated as forming a shallow donor (0.230.34 eV below the conduction band). We present the results of first-principles calculations of boron complexes with 24... (Read more)
- 304. Phys. Rev. B 69, 165206 (2004) , “Structural and vibrational properties of {N,N} pairs and {N,H} complexes in Si”, J. L. McAfee, He Ren, and S. K. EstreicherFirst-principles molecular-dynamics simulations are used to predict the structures and binding energies of interstitial nitrogen Ni, substitutional nitrogen Ns, the Ni-self-interstitial complex, the {Ni,Ni}, {Ni,Ns} =... (Read more)
- 305. Phys. Rev. B 69, 155206 (2004) , “Structure, energetics, and extrinsic levels of small self-interstitial clusters in silicon”, Giorgia M. Lopez and Vincenzo FiorentiniNative defects in Si are of obvious importance in microelectronic device processing. Self-interstitials in particular are known to mediate, in many cases, anomalous impurity diffusion. Here we study the energetics and electronic structure of single, double, and triple self-interstitial clusters in... (Read more)
- 306. Phys. Rev. B 69, 153202 (2004) , “Divacancy annealing in Si: Influence of hydrogen”, E. V. Monakhov, A. Ulyashin, G. Alfieri, A. Yu. Kuznetsov, B. S. Avset, and B. G. SvenssonWe have performed comparative studies of divacancy (V2) annealing in hydrogenated and nonhydrogenated Si by deep level transient spectroscopy. It is shown that the nonhydrogenated samples demonstrate the formation of divacancy-oxygen (V2O) complex during annealing of... (Read more)
- 307. Phys. Rev. B 69, 125218 (2004) , “Structure and properties of vacancy-oxygen complexes in Si1–xGex alloys”, V. P. Markevich, A. R. Peaker, J. Coutinho, R. Jones, V. J. B. Torres, S. Öberg, P. R. Briddon, L. I. Murin, L. Dobaczewski, and N. V. AbrosimovThe electronic properties and structure of vacancy-oxygen (VO) complexes in Czochralski-grown Si1xGex crystals (0<x<0.06) have been studied by means of capacitance transient techniques and ab initio modeling. At least three configurations... (Read more)
- 308. Phys. Rev. B 69, 125217 (2004) , “Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency”, Y. Tokuyama, M. Suezawa, N. Fukata, T. Taishi, and K. HoshikawaWe studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH2, a complex of one self-interstitial (I) and two H atoms. If the IH2 concentration depends on species of... (Read more)
- 309. Phys. Rev. B 69, 125214 (2004) , “Spectroscopic evidence for a N-Ga vacancy defect in GaAs”, H. Ch. Alt, Y. V. Gomeniuk, and B. WiedemannA local vibrational mode occurring at 638 cm1 in nitrogen-rich GaAs bulk crystals and 14N-implanted GaAs layers has been investigated by high-resolution Fourier transform infrared absorption spectroscopy. Measurements on samples coimplanted with 14N and... (Read more)
- 310. Phys. Rev. B 69, 125210 (2004) , “Dissociation of H-related defect complexes in Mg-doped GaN”, O. Gelhausen, M. R. Phillips, E. M. Goldys, T. Paskova, B. Monemar, M. Strassburg, and A. HoffmannPost-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately... (Read more)
- 311. Phys. Rev. B 69, 115212 (2004) , “Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance”, Yu. V. Gorelkinskii and G. D. WatkinsThe effect of 2.5 MeV electron irradiation in situ at 4.2 K on the properties of single crystalline ZnO is studied by photoluminescence (PL) and optically detected electron paramagnetic resonance (ODEPR). A new PL band is produced by the irradiation, and several annealing stages are observed... (Read more)
- 312. Phys. Rev. B 69, 115205 (2004) , “Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si”, V. Ranki, A. Pelli, and K. SaarinenPositron annihilation experiments have been performed to identify defects created by annealing of electron irradiated of heavily As-, P-, and Sb-doped Si samples. We show that the vacancy-donor pairs (V-D1) migrate around 450 K, transforming into... (Read more)
- 313. Phys. Rev. B 69, 075210 (2004) , “Isoelectronic oxygen-related defect in CdTe crystals investigated using thermoelectric effect spectroscopy”, Salah A. Awadalla, Alan W. Hunt, Kelvin G. Lynn, Howard Glass, Csaba Szeles, and Su-Huai WeiAn oxygen-related defect was studied in nominally undoped CdTe crystals grown by the high pressure Bridgman technique using thermo-electrical effect spectroscopy and first-principles band structure calculations. Based on the linear relationship between the oxygen concentration and the emitted charge... (Read more)
- 314. Phys. Rev. B 69, 045208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, and Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 315. Phys. Rev. B 69, 045207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, and Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 316. Phys. Rev. B 69, 045201 (2004) , “Hydrogenation of the dominant interstitial defect in irradiated boron-doped silicon”, N. Yarykin, O. V. Feklisova, and J. WeberThe H3-center with a level at Ev + 0.535 eV is observed in hydrogenated electron-irradiated boron-doped silicon. In samples with boron concentrations of (220)×1015 cm3 the center is the most abundant among all defects detected by... (Read more)
- 317. Phys. Rev. B 69, 035210 (2004) , “Evolution of voids in Al+-implanted ZnO probed by a slow positron beam”, Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. OhdairaUndoped ZnO single crystals were implanted with aluminum ions up to a dose of 1015Al+/cm2. Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters,... (Read more)
- 318. Phys. Rev. Lett. 93, 055505 (2004) , “Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends”, F. Tuomisto, K. Pennanen, K. Saarinen, and J. SadowskiWe have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga1xMnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite... (Read more)
- 319. Phys. Rev. Lett. 93, 055504 (2004) , “Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells”, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergThe formation mechanism and properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation is investigated using density functional calculations. We find that boron traps an oxygen dimer to form a bistable defect with a donor level in... (Read more)
- 320. Phys. Rev. Lett. 92, 255504 (2004) , “Stable Fourfold Configurations for Small Vacancy Clusters in Silicon from ab initio Calculations”, D. V. Makhov and Laurent J. LewisUsing density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and pentavacancies in silicon. These new configurations consist of combinations of a ring hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain... (Read more)
- 321. Phys. Rev. Lett. 92, 047603 (2004) , “Probing the Wave Function of Shallow Li and Na Donors in ZnO Nanoparticles”, Serguei B. Orlinskii, Jan Schmidt, Pavel G. Baranov, Detlev M. Hofmann, Celso de Mello Donegá, and Andries MeijerinkElectron paramagnetic resonance and electron nuclear double resonance (ENDOR) experiments on ZnO nanoparticles reveal the presence of shallow donors related to interstitial Li and Na atoms. The shallow character of the wave function is evidenced by the multitude of 67Zn ENDOR lines and... (Read more)
- 322. Phys. Rev. Lett. 92, 047602 (2004) , “Overhauser Effect of 67Zn Nuclear Spins in ZnO via Cross Relaxation Induced by the Zero-Point Fluctuations of the Phonon Field”, Hubert Blok, Serguei B. Orlinski, Jan Schmidt, and Pavel G. BaranovHole burning in and displacements of the magnetic-resonance absorption line of the electron spin of the shallow hydrogen-related donor in ZnO are observed upon resonant irradiation with microwaves at 275 GHz and at 4.5 K in a magnetic field of 10 T. These effects arise from an almost complete... (Read more)
- 323. Phys. Rev. Lett. 92, 017402 (2004) , “Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes”, S. J. Sque, R. Jones, J. P. Goss, and P. R. BriddonThe utility of diamond as an electronic material is compromised by the lack of a suitable shallow donor. Here, ab initio theory is used to investigate the donor levels of substitutional pnictogen (N, P, As, and Sb) and chalcogen (S, Se, and Te) impurities and chalcogen-hydrogen defects in... (Read more)
- 324. Phys. Rev. Lett. 92, 015504 (2004) , “Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass”, Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo HosonoThe role of mobile interstitial oxygen atoms (O0) in defect processes in oxides is demonstrated by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass. Superstoichiometric O0 was created by F2 laser photolysis of the... (Read more)
- 325. phys. stat. sol. (b) 241, 3242 (2004) , WILEY-VCH , “Influence of P-T pre-treatment on thermopower of Czochralski-grown silicon at high pressure”, V.V. Shchennikov, S.V. Ovsyannikov, A. Misiuk, V.V. Shchennikov JrFor the first time the thermoelectric power of high-pressure phases of Czochralski-grown silicon (Cz-Si) single crystals has been investigated. From the dependence on pressure of the thermopower the phase transitions in Si have been established. The influence of gas pressure (up to 1.5 GPa) and... (Read more)
- 326. phys. stat. sol. (c) 1, 3110 (2004) , Wiley InterScience , “Raman spectra of lead chalcogenide single crystals”, S.V. Ovsyannikov, Y.S. Ponosov, V.V. Shchennikov, V.E. MogilenskikhRaman spectra of single crystals of lead chalcogenides (PbTe, PbSe, PbS) were studied at room temperature and ambient pressure. The structure of spectra for all compounds is rather similar showing the bands in one- and two-phonon range. Possible spectra identification is discussed. (© 2004... (Read more)
- 327. Physica B 344, 190 (2004) , Elsevier , “Thermomagnetic and thermoelectric properties of semiconductors (PbTe, PbSe) at ultrahigh pressures”, S.V. Ovsyannikov, V.V. ShchennikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (LNE, TNE) effects and the Maggi–Reghi–Leduc (MRL) effect were measured on PbTe and PbSe micro-samples at ultrahigh pressures upto 20 GPa. Values of the mobility of charge carriers as well as the scattering parameter were estimated both for the low- and high-pressure phase of PbTe and PbSe. At about 3 GPa, the maxima of both Nernst–Ettingshausen effects and magnetoresistance (MR) (and hence of the mobility of charge carriers μ), attributed to the gapless state of PbTe and PbSe were established. The TNE effect was found to be the largest among the effects measured, while the MRL was hardly visible even at the highest mobility values of the charge carriers. The possibilities for using thermomagnetic effects in micro-device technologies are discussed. (Read more)
- 328. Solid State Commun. 132, 333 (2004) , Pergamon Press , “Phase transitions investigation in ZnTe by thermoelectric power measurements at high pressure”, S.V. Ovsyannikov, V.V. ShchennikovThe pressure-induced phase transitions were studied in ZnTe by the thermoelectric power (S) technique. For the high-pressure trigonal phase P3121 cinnabar the large thermopower values S≈+400 correspond to semiconductor hole conductivity. During a transition into the orthorhombic structure Cmcm the value of S dropped by 40–50 times indicating metallic hole conductivity, like in the high pressure phases of other chalcogenides of II Group (HgSe, HgTe, CdTe) with Cmcm structure. In a transient region between the trigonal and orthorhombic phase (especially under decreasing pressure) a novel phase has been observed with a negative value of S. By analogy with other Zn and Cd chalcogenides whose NaCl phases have an electron type of conductivity the phase observed may have a NaCl structure. (Read more)
- 329. Appl. Phys. Lett. 83, 934-936 (2003) , “Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique”, Lin Shao, Xuemei Wang, Irene Rusakova, Hui Chen, and Jiarui LiuTrapping of migrating Si interstitials at substrate/epitaxial interfaces during high-energy Si ion bombardment has been observed. It shows that the interface of Si/Si layer, grown by molecular-beam epitaxy, is a strong sink for self-interstitials during MeV bombardment at room temperature. We... (Read more)
- 330. Appl. Phys. Lett. 83, 923-925 (2003) , “Interstitial H and H2 in SiC”, M. KaukonenThe properties of hydrogen in 3C and 4H type silicon carbide (SiC) are studied theoretically at the density functional level. We find that only singly positive or negative charge states of hydrogen are thermodynamically stable in SiC. The transition from the positive to the negative charge state... (Read more)
- 331. Appl. Phys. Lett. 83, 905-907 (2003) , “Investigation of boron diffusion in 6H-SiC”, Y. Gaop-type doping of 6H-SiC was implemented by diffusion of boron at temperatures higher than 1900 °C. The doping profiles were clearly divided into steep (zone I) and long-tail (zone II) regions. The boron diffusions in both regions are well fitted by erfc... (Read more)
- 332. Appl. Phys. Lett. 83, 665-667 (2003) , “Formation of BiOi, BiCs, and BiBsHi defects in e-irradiated or ion-implanted silicon containing boron”, J. Adey and R. JonesThe local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments... (Read more)
- 333. Appl. Phys. Lett. 83, 5407-5409 (2003) , “Clusters formation in ultralow-energy high-dose boron-implanted silicon”, F. Cristiano, X. Hebras, N. Cherkashin, and A. ClaverieThe formation and evolution of small cluster defects in 500 eV, 1×1015 cm2 boron-implanted silicon is investigated. These clusters are identified by high-resolution transmission electron microscopy (TEM) as small dislocation loops lying on {100} planes with an... (Read more)
- 334. Appl. Phys. Lett. 83, 4981-4983 (2003) , “Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons”, Hideharu Matsuura, Koichi Aso, Sou Kagamihara, Hirofumi Iwata, and Takuya IshidaFrom the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer, an Al acceptor with ~200 meV and an unknown defect with ~370 meV are found. By irradiation with 4.6 MeV electrons, the Al acceptor density is reduced, while the unknown defect density... (Read more)
- 335. Appl. Phys. Lett. 83, 4957-4959 (2003) , “Core structure and properties of partial dislocations in silicon carbide p-i-n diodes”, S. Ha, M. Benamara, and M. SkowronskiThe electroluminescence, mobility, and core nature of partial dislocations bounding stacking faults in 4H silicon carbide p-i-n diodes were investigated using optical emission microscopy and transmission electron microscopy (TEM). The stacking faults developed and expanded in... (Read more)
- 336. Appl. Phys. Lett. 83, 458-460 (2003) , “Irradiation-induced recovery of disorder in gallium nitride”, W. Jiang and W. J. WeberGallium nitride has been irradiated to two fluences with energetic Au2+ ions at 300 K. Two different damage levels and depth profiles were produced that are characterized by near-surface damage accumulation and deeper-regime damage saturation. Thermal annealing at 873 K resulted in... (Read more)
- 337. Appl. Phys. Lett. 83, 45-47 (2003) , “Visible luminescence of porous amorphous Si1–xCx:H due to selective dissolution of silicon”, K. RerbalRoom-temperature photoluminescence of porous hydrogenated amorphous silicon-carbon alloys (a-Si1xCx:H) has been studied for different carbon concentrations. Porous a-Si1xCx:H luminesces at energies much... (Read more)
- 338. Appl. Phys. Lett. 83, 437-439 (2003) , “Negative-U property of the oxygen vacancy defect in SiO2 and its implication for the E1[prime]" align="middle"> center in α-quartz”, D. J. ChadiThe +1 charged state of an oxygen vacancy V(O)+ in α-quartz is found to be unstable with respect to the reaction 2V(O)+V(O)0 + V(O)2+, which lowers the total energy by 2.9 eV, making it highly unlikely that... (Read more)
- 339. Appl. Phys. Lett. 83, 4354-4356 (2003) , “Native hole traps of ferromagnetic Ga1–xMnxAs layers on (100) GaAs substrates”, I. T. Yoon, C. J. Park, H. Y. Cho, and T. W. KangDominant hole traps of ferromagnetic Ga1xMnxAs and epilayers with an Mn mole fraction of x2.2% and 4.4% were identified employing deep-level transient spectroscopy. Three hole traps with binding energies of EA = 0.38±0.01 eV at... (Read more)
- 340. Appl. Phys. Lett. 83, 4333-4335 (2003) , “Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy”, F. Albrecht, G. Pasold, J. Grillenberger, N. Achtziger, and W. WitthuhnA deep energy level of bromine in the bandgap of GaAs was determined by means of Radiotracer deep-level transient spectroscopy (DLTS) measurements. For this purpose, the radioactive isotope 77Br was implanted in p-type as well as in n-type GaAs. In the course of repeated... (Read more)
- 341. Appl. Phys. Lett. 83, 4324-4326 (2003) , “Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering”, Peng Zhang, Hele Väinölä, Andrei A. Istratov, and Eicke R. WeberThe redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×1014 cm3 and an oxide precipitate density of 5×109 cm3. The concentrations of interstitial iron and... (Read more)
- 342. Appl. Phys. Lett. 83, 4193-4195 (2003) , “Intrinsic compensation of silicon-doped AlGaN”, M. C. WagenerThe silicon doping characteristics of AlxGa1xN were investigated over the x = 0.20.5 composition range. A combination of Hall and capacitancevoltage measurements indicated a significant deepening of the Si level, as well as a systematic... (Read more)
- 343. Appl. Phys. Lett. 83, 4169-4171 (2003) , “Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion”, Chung Foong Tan and Eng Fong ChorIt has been demonstrated that, by incorporating a thin ~20 nm Si1yCy (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated.... (Read more)
- 344. Appl. Phys. Lett. 83, 3710-3712 (2003) , “Metastability of two-hydrogen complexes in silicon”, D. J. ChadiA two-hydrogen interstitial complex (H2**" align="middle">) in crystalline Si that exhibits metastability is proposed via first-principles total energy calculations. In its most stable state, H2**" align="middle"> is 0.28 eV/H higher in energy than... (Read more)
- 345. Appl. Phys. Lett. 83, 3525-3527 (2003) , “On the nitrogen vacancy in GaN”, D. C. LookThe dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in n-type GaN, we argue that the 70 meV donor... (Read more)
- 346. Appl. Phys. Lett. 83, 3522-3524 (2003) , “Donor–donor binding in semiconductors: Engineering shallow donor levels for ZnTe”, A. Janotti, Su-Huai Wei, and S. B. ZhangIn the past, codoping by mixing donors with acceptors has been proposed to lower the dopant ionization energy. However, the level repulsion between donor and acceptor states is weak due to symmetry considerations. Here, we propose an innovative approach to lower the donor ionization energy by... (Read more)
- 347. Appl. Phys. Lett. 83, 3293-3295 (2003) , “Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN”, O. Gelhausen, H. N. Klein, and M. R. PhillipsThe effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following... (Read more)
- 348. Appl. Phys. Lett. 83, 3051-3053 (2003) , “Electronic structure of acceptor-donor complexes in silicon”, E. Atoro, Y. Ohama, and Y. HayafujiThe electronic structure of trimer acceptor-donor complexes in silicon Si clusters is studied using the ab initio discrete variational-Xα molecular-orbital (MO) method. The trimer complexes In2D (D = phosphorus P, arsenic As, antimony Sb, or bismuth Bi) consist of two... (Read more)
- 349. Appl. Phys. Lett. 83, 3042-3044 (2003) , “Role of boron for defect evolution in hydrogen-implanted silicon”, J. K. Lee, T. Höchbauer, R. D. Averitt, and M. NastasiThe mechanism underlying the exfoliation phenomenon in B+H coimplanted Si is presented. Compared with only H implantation, H-implanted Si samples that received a B preimplant were observed to have a decrease in implantation-induced lattice damage, in spite of enhanced blistering behavior, which was... (Read more)
- 350. Appl. Phys. Lett. 83, 287-289 (2003) , “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy”, J. F. Rommeluère, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. MarfaingThe electrical activity of nitrogen as an acceptor in ZnO has been investigated in two ways. First, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy (MOVPE) yielding incorporation of nitrogen in the range 10161021 ... (Read more)
- 351. Appl. Phys. Lett. 83, 2835-2837 (2003) , “Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy”, W. S. LauDefect state D (0.8 eV) was experimentally detected in Ta2O5 capacitors with ultrathin (physical thickness <10 nm) Ta2O5 films using zero-bias thermally stimulated current spectroscopy and correlated with leakage current. Defect state D can be more... (Read more)
- 352. Appl. Phys. Lett. 83, 2007-2009 (2003) , “Doping of chalcopyrites by hydrogen”, Çetin Klç and Alex ZungerFirst-principles total-energy calculations for hydrogen impurities in CuInSe2 (CIS) and CuGaSe2 (CGS) show that H+ takes up the CuSe bond center position, whereas H0 and H take up tetrahedral interstitial site next to In (in CIS) or... (Read more)
- 353. Appl. Phys. Lett. 83, 1947-1949 (2003) , “Blue photoluminescence of α-Ga2S3 and α-Ga2S3:Fe2+ single crystals”, Chang-Sun Yoonα-Ga2S3 and α-Ga2S3:Fe2+ single crystals were grown by the two-zone sublimation method. The optical energy gaps of α-Ga2S3 and α-Ga2S3:Fe2+ at 10 K were found to be... (Read more)
- 354. Appl. Phys. Lett. 83, 1385-1387 (2003) , “Hydrogen passivation of nitrogen in SiC”, A. Gali and P. DeákFirst-principles calculations carried out in 4H-SiC show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. The complex is very stable with respect to isolated positive donors and negatively charged hydrogen interstitials, so reactivation is... (Read more)
- 355. Appl. Phys. Lett. 83, 1325-1327 (2003) , “Aggregate nitrogen in synthetic diamond”, Karen M. McNamaraNitrogen is a commonly observed impurity in natural and synthetic diamond, yet there are still many questions in regard to its incorporation in the material. In all three common forms of diamond: natural, high-pressure high-temperature synthetic, and chemical vapor deposition (CVD) diamond; nitrogen... (Read more)
- 356. Appl. Phys. Lett. 82, 592-594 (2003) , “Shallow donor state of hydrogen in indium nitride”, E. A. DavisThe nature of the electron states associated with hydrogen in InN has been inferred by studying the behavior of positive muons, which mimic protons when implanted into semiconductors. The muons capture electrons below 60 K, forming paramagnetic centers with a binding energy of about 12 meV. Together... (Read more)
- 357. Appl. Phys. Lett. 82, 568-570 (2003) , “Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation”, V. V. Afanas'ev and A. StesmansAn analysis of fast and slow traps at the interface of 4HSiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects... (Read more)
- 358. Appl. Phys. Lett. 82, 565-567 (2003) , “Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces”, A. Lehner, F. Kohl, S. A. Franzke, T. Graf, M. S. Brandt, and M. StutzmannOrganic monolayers were prepared on hydrogen-terminated (111) silicon surfaces by thermally induced hydrosilylation with alkenes. The electronic properties of the modified surfaces were studied by photoconductivity and spin-dependent photoconductivity measurements (electrically detected magnetic... (Read more)
- 359. Appl. Phys. Lett. 82, 532-534 (2003) , “Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO”, T. Koida, S. F. Chichibu, and A. UedonoInfluences of point defects on the nonradiative processes in ZnO were studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement. Free excitonic PL intensity naturally increased with the increase in the... (Read more)
- 360. Appl. Phys. Lett. 82, 4157-4159 (2003) , “Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors”, H. D. Shih, M. A. Kinch, F. Aqariden, P. K. Liao, and H. F. SchaakeGold-doped Hg1xCdxTe samples of x = 0.2067 (in the very-long-wavelength infrared spectral band, with cutoff wavelengths ~13.2 µm at 77 K) were prepared by tellurium-melt liquid-phase epitaxy. The samples were doped with indium to... (Read more)
- 361. Appl. Phys. Lett. 82, 4074-4076 (2003) , “Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2”, A. Stesmans and V. V. Afanas'evElectron spin resonance analysis of (100)Si/HfO2 interfaces prepared by chemical vapor deposition of the oxide using three chemically different precursors reveals that the trivalent Si defects common for Si/SiO2 interfacesPb0 and Pb1... (Read more)
- 362. Appl. Phys. Lett. 82, 40-42 (2003) , “Observation of defect complexes containing Ga vacancies in GaAsN”, J. Toivonen, T. Hakkarainen, M. Sopanen, and H. LipsanenPositron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm3 with increasing N composition and decreases... (Read more)
- 363. Appl. Phys. Lett. 82, 3865-3867 (2003) , “Electrically active defects in silicon produced by ion channeling”, H. Kortegaard NielsenLow-dose implantations with 65 Si and 150 keV Ge ions into the n+ top layer of Si n+p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transient spectroscopy. Results were compared to crystal-TRIM... (Read more)
- 364. Appl. Phys. Lett. 82, 3671-3673 (2003) , “Deep level defect in Si-implanted GaN n+-p junction”, X. D. Chen, Y. Huang, S. Fung, C. D. Beling, and C. C. LingA deep level transient spectroscopy (DLTS) study has been performed on a GaN n+-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect has been revealed within the interfacial region of the junctions by... (Read more)
- 365. Appl. Phys. Lett. 82, 3469-3471 (2003) , “Fluorine-enhanced boron diffusion in amorphous silicon”, J. M. Jacques, L. S. Robertson, and K. S. JonesSilicon wafers were preamorphized with 70 keV Si+ at a dose of 1×1015 atoms/cm2, generating a deep amorphous layer of 1800 Å. Implants of 500 eV 11B+, with and without 6 keV F+, followed at doses of 1×1015... (Read more)
- 366. Appl. Phys. Lett. 82, 3457-3459 (2003) , “Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN”, R. Armitage, William Hong, Qing Yang, H. Feick, J. Gebauer, and E. R. WeberCarbon-doped GaN layers grown by molecular-beam epitaxy are studied with photoluminescence and positron annihilation spectroscopy. Semi-insulating layers doped with >1018 cm3 carbon show a strong luminescence band centered at ~2.2 eV (yellow luminescence). The... (Read more)
- 367. Appl. Phys. Lett. 82, 3448-3450 (2003) , “Optical properties of the isoelectronic trap Hg in ZnO”, Th. Agne, M. Dietrich, J. Hamann, S. Lany, H. Wolf, and Th. WichertNominally undoped ZnO crystals were doped with Hg by implanting radioactive 197Hg/197Au atoms. After annealing at 1073 K, the photoluminescence (PL) spectra recorded at 1.6 K exhibit a Hg related band in the region between 3.28 and 2.85 eV. The sharp no-phonon line, which is... (Read more)
- 368. Appl. Phys. Lett. 82, 3433-3435 (2003) , “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy”, J. Oila, J. Kivioja, V. Ranki, and K. SaarinenPositron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 1019 to below 1016 cm3, as the... (Read more)
- 369. Appl. Phys. Lett. 82, 3260-3262 (2003) , “Optically induced formation of the hydrogen complex responsible for the 4B0 luminescence in 4H-SiC”, Yaroslav KoshkaFormation of a boron-related defect responsible for the 4B0 emission line in the low-temperature photoluminescence spectrum of 4H SiC has been investigated. The 4B0 luminescence was absent in as-grown epitaxial layers. This line appeared after hydrogenation along with other... (Read more)
- 370. Appl. Phys. Lett. 82, 3002-3004 (2003) , “Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN”, Qing Yang, Henning Feick, and Eicke R. WeberExcitonic luminescence of GaN after irradiation with 0.42-MeV electrons has been investigated in detail. The low-energy irradiation generates damage exclusively in the N sublattice. Additional bound-exciton lines are found and are shown to arise from a hydrogenic donor with a binding energy... (Read more)
- 371. Appl. Phys. Lett. 82, 2987-2989 (2003) , “Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon”, D. H. Macdonald, H. Maeckel, S. Doshi, W. Brendle, and A. CuevasCarrier lifetime measurements have been used to characterize residual defects after low-energy implanting of silicon ions followed by high-temperature annealing (900 or 1000 °C). The implant was found to result in two distinct regions of lifetime-reducing damage. First, a high recombination... (Read more)
- 372. Appl. Phys. Lett. 82, 296-298 (2003) , “Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes”, H. Ohyama, K. Takakura, and K. HayamaThe impact of high-temperature neutron, electron, and γ-irradiations on the dark current of silicon pin junctions is described in terms of a damage coefficient KI. It is shown that this KI is thermally activated and reduces... (Read more)
- 373. Appl. Phys. Lett. 82, 2835-2837 (2003) , “Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) analysis reveals that the versatile noncontacting corona biasing method frequently applied in the electrical analysis of Si/SiO2-based structures is not a noninvasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of... (Read more)
- 374. Appl. Phys. Lett. 82, 2652-2654 (2003) , “Vacancy–oxygen complex in Si1–xGex crystals”, V. P. Markevich and A. R. PeakerElectronic properties of the vacancyoxygen complex in unstrained Si1xGex crystals (0<x0.055) grown by the Czochralski method were studied by means of capacitance transient techniques. The enthalpy of electron ionization for the single... (Read more)
- 375. Appl. Phys. Lett. 82, 2263-2265 (2003) , “Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy”, A. Krtschil, A. Dadgar, and A. KrostThe electrical charge state of threading dislocations in differently doped GaN is investigated by scanning surface potential microscopy in conjunction with tapping mode atomic force microscopy. The dislocations are found to be either negatively charged or neutral depending on the type of doping... (Read more)
- 376. Appl. Phys. Lett. 82, 2254-2256 (2003) , “Phosphorus and boron diffusion in silicon under equilibrium conditions”, J. S. Christensen and H. H. RadamsonThe intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 °C) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74±0.07 eV and a... (Read more)
- 377. Appl. Phys. Lett. 82, 2169-2171 (2003) , “Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for "type inversion"”, I. PintilieRadiation-induced defects in silicon diodes were investigated after exposure to high doses of Co60-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in... (Read more)
- 378. Appl. Phys. Lett. 82, 2094-2096 (2003) , “Comparison of oxygen-chain models for late thermal double donors in silicon”, Y. J. Lee, J. von Boehm, M. Pesola, and R. M. NieminenThe electronic and atomic structures of the oxygen chains assigned to late thermal double donors (TDDs) in silicon are studied using accurate total-energy calculations. We find that the ring-type O-chain model is best suited for TDDs and better than the di-Y-lid-type O-chain model. The ring-type O... (Read more)
- 379. Appl. Phys. Lett. 82, 2082-2084 (2003) , “Effect of Be+ + O+ coimplantation on Be acceptors in GaN”, Yoshitaka Nakano and Tetsu KachiP-type regions were produced in undoped GaN films by Be+ and Be+ + O+ implantation and subsequent annealing at temperatures between 1000 and 1050 °C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level was... (Read more)
- 380. Appl. Phys. Lett. 82, 2074-2076 (2003) , “Cathodoluminescence and Hall-effect measurements in sulfur-doped chemical-vapor-deposited diamond”, Kazushi Nakazawa, Minoru Tachiki, and Hiroshi KawaradaDominant n-type conductivity in sulfur-doped chemical-vapor-deposited diamond is observed by Hall-effect measurement. The activation energy is estimated at 0.50.75 eV above 600 K. Below 600 K, the carrier concentration deviates from the activation energy, and Hall mobility decreases in... (Read more)
- 381. Appl. Phys. Lett. 82, 2059-2061 (2003) , “Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy”, J. Gebauer and E. R. WeberWe identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (TeAs), Ga vacancies (VGa), and Ga vacancydonor complexes... (Read more)
- 382. Appl. Phys. Lett. 82, 2020-2022 (2003) , “Observation of interface defects in thermally oxidized SiC using positron annihilation”, James Dekker and Kimmo SaarinenPositron annihilation has been applied to study thermally oxidized 4H- and 6H-SiC. The SiC/SiO2 interface is found to contain a high density of open-volume defects. The positron trapping at the interface defects correlates with the charge of the interface determined by... (Read more)
- 383. Appl. Phys. Lett. 82, 1556-1558 (2003) , “Identification of implantation-induced defects in GaN: A near-edge x-ray absorption fine structure study”, M. Katsikini, F. Pinakidou, and E. C. PalouraWe apply near-edge x-ray absorption fine structure spectroscopy, at the N K edge, in order to identify the signature of implantation-induced defects in the partial density of empty states in GaN implanted with O, Mg, and Si ions. The dose range was 10141018... (Read more)
- 384. Appl. Phys. Lett. 82, 1066-1068 (2003) , “Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy”, In Sang Jeon, Jaehoo Park, Dail Eom, Cheol Seong Hwang, and Hyeong Joon KimThe minority carrier (electron) capture process and the interface trap density of a TiN/Al2O3/p-Si metaloxidesemiconductor capacitor were examined by deep level transient spectroscopy (DLTS). It was found that the activation energies of the large peaks... (Read more)
- 385. Appl. Phys. Lett. 82, 1021-1023 (2003) , “Ga vacancies and grain boundaries in GaN”, J. Oila and K. SaarinenWe have applied a low-energy positron beam to study epitaxial Si-doped GaN layers, where the grain size varies from 0.2 to 25 µm. Negatively charged Ga vacancies are found in n-type samples. Their concentration is independent of the grain size, suggesting that Ga vacancies exist... (Read more)
- 386. J. Appl. Phys. 94, 7567 (2003) , “Electron paramagnetic resonance of Cr2+ and Cr4+ ions in CdGeAs2 crystals”, N. Y. Garces, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate chromium ions in single crystals of CdGeAs2 grown by the horizontal gradient freeze technique. Signals from Cr2+ and Cr4+ ions were observed near 12 K. The Cr2+ ions have the... (Read more)
- 387. J. Appl. Phys. 94, 7470 (2003) , “Defect assessment of Mg-doped GaN by beam injection techniques”, C. Díaz-Guerra and J. PiquerasThe electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous... (Read more)
- 388. J. Appl. Phys. 94, 7112 (2003) , “Dynamic annealing in ion implanted SiC: Flux versus temperature dependence”, A. Yu. KuznetsovA strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes... (Read more)
- 389. J. Appl. Phys. 94, 6456 (2003) , “Production and thermal decay of radiation-induced point defects in KD2PO4 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonOptical absorption and electron paramagnetic resonance (EPR) techniques have been used to characterize the production and thermal decay of point defects in undoped single crystals of KD2PO4 grown at Lawrence Livermore National Laboratory. A crystal was irradiated at 77 K with x... (Read more)
- 390. J. Appl. Phys. 94, 5617 (2003) , “Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation”, M. D. Chun, D. Kim, and J. Y. HuhA comparative study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) Si wafers, which differed mainly in interstitial oxygen concentration, upon 3 MeV proton irradiation with fluences of up to 2×1015... (Read more)
- 391. J. Appl. Phys. 94, 5399 (2003) , “Optical properties of GaSe grown with an excess and a lack of Ga atoms”, S. ShigetomiMeasurements of the photoluminescence (PL) and photocurrent (PC) have been made on GaSe with excess Ga or Se atoms. The 1.77 eV emission band for the sample with excess Ga atoms is attributed to the transition from the donor level at 0.175 eV to the acceptor level at 0.152 eV. This donor level is... (Read more)
- 392. J. Appl. Phys. 94, 5297 (2003) , “Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors”, A. CavalliniThe features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaAs/GaAs heterostructure field-effect transistors both through experiments and two-dimensional numerical device simulations. Differently from electron traps located in the n-type semiconductor... (Read more)
- 393. J. Appl. Phys. 94, 4807 (2003) , “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements”, Z. Q. Chen, S. Yamamoto, M. Maekawa, and A. KawasusoDefects in hydrothermal grown ZnO single crystals are studied as a function of annealing temperature using positron annihilation, x-ray diffraction, Rutherford backscattering, Hall, and cathodoluminescence measurements. Positron lifetime measurements reveal the existence of Zn vacancy related... (Read more)
- 394. J. Appl. Phys. 94, 4363 (2003) , “Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon”, C. A. Londos and M. S. PotsidiCzochralski-grown silicon samples subjected to high temperaturehigh pressure (HTHP) treatments in the range of 900 °C were irradiated with fast neutrons. Transmission electron microscopy measurements revealed the presence of oxygen precipitates (SiOx) and dislocation... (Read more)
- 395. J. Appl. Phys. 94, 400 (2003) , “Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen plasma treatment on high-quality bulk n-ZnO crystals were studied. It is shown that after plasma exposure at 200 °C for 0.5 h the hydrogen penetrates into the material down to about 20 µm and shows concentrations close to 1017 cm3... (Read more)
- 396. J. Appl. Phys. 94, 3960 (2003) , “Hydrogen plasma passivation effects on properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen on the electrical and optical properties of p-GaN were investigated. Hydrogen is readily incorporated into the material at temperatures of 250350 °C, which is consistent with the low activation energy for diffusion reported by Seager et al. [J. Appl. Phys.... (Read more)
- 397. J. Appl. Phys. 94, 3923 (2003) , “Electrically active sulfur-defect complexes in sulfur implanted diamond”, R. Kalish and C. Uzan-SaguySingle crystal type IIa 100 diamonds were implanted with sulfur, phosphorus, and argon ions under different implantation and annealing conditions. Shallow (sub-MeV) as well as deep (MeV) implantations into samples held at low (liquid nitrogen) ambient (room temperature) and high (400 °C)... (Read more)
- 398. J. Appl. Phys. 94, 3796 (2003) , “Electron paramagnetic resonance characterization of impurity Gd3+ ions in a PbWO4 single crystal”, T. H. Yeom and S. H. LeeLead tungstate single crystals doped with Gd2O3 were grown by the Czochralski method in Ar atmosphere. The electron paramagnetic resonance of the Gd3+ ion in a PbWO4 single crystal has been investigated at 9.4 GHz. The spectroscopic splitting tensor... (Read more)
- 399. J. Appl. Phys. 94, 3233 (2003) , “Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy”, Y. Nakakura, M. Kato, M. Ichimura, and E. AraiAn optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize defects in epitaxial 6H-SiC. The O-CTS measurements enable us to estimate the optical ionization energy and the optical cross section of these defects. By the deep level transient spectroscopy (DLTS), three... (Read more)
- 400. J. Appl. Phys. 94, 3075 (2003) , “Evolution of photoluminescent defect clusters in proton- and copper-implanted silicon crystals during annealing”, Minoru Nakamura and Susumu MurakamiEvolution of intrinsic defects (interstitials or vacancies) formed by implanting with protons and copper ions in silicon crystals and then annealing the crystals at temperatures from 100 to 800 °C was investigated by photoluminescence (PL) measurements. For samples annealed below 400 °C,... (Read more)
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