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- 1001. Appl. Phys. Lett. 73, 3745 (1998) , “Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation”, F. D. Auret and S. A. GoodmanEpitaxial n-GaN was irradiated with 5.4-MeV He ions. Capacitancevoltage (CV) measurements showed that 5.4-MeV He ions remove free carriers at a rate of 6200 ± 300 cm 1 in the first micron below the surface. Deep level transient spectroscopy... (Read more)
- 1002. Appl. Phys. Lett. 73, 3698 (1998) , “Radiotracer investigation of deep Ga- and Zn-related band gap states in 6H–SiC”, J. Grillenberger, N. Achtziger, F. Günther, and W. WitthuhnTo identify Ga- or Zn-related deep levels, deep level transient spectroscopy (DLTS) measurements were performed repeatedly during the elemental transmutation of 67Ga to 67Zn. The radioactive isotope 67Ga was recoil implanted into p-type 6HSiC for... (Read more)
- 1003. Appl. Phys. Lett. 73, 3559 (1998) , “Majority carrier traps in proton-irradiated GaInP”, J. R. Dekker, A. Tukiainen, and R. JaakkolaThe majority carrier traps formed in p-GaInP following room temperature irradiation with 3.1 MeV protons have been investigated using deep level transient Fourier spectroscopy. The radiation damage consists of several closely spaced peaks, one of which may have existed in the as-grown... (Read more)
- 1004. Appl. Phys. Lett. 73, 3369 (1998) , “Room-temperature diffusivity of self-interstitials and vacancies in ion-implanted Si probed by in situ measurements”, Salvatore Coffa and Sebania LibertinoWe have determined the room-temperature diffusivity of self-interstitials and vacancies in Si. Silicon p+ n junctions were realized in n-type epitaxial Si wafers, having an O and C content 1015/cm3, and implanted at room temperature with... (Read more)
- 1005. Appl. Phys. Lett. 73, 3253 (1998) , “Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy”, K. Saarinen, P. Seppälä, J. Oila, P. Hautojärvi, and C. CorbelWe have applied positron spectroscopy to study the formation of vacancy defects in undoped n-type metal organic chemical vapor deposition grown GaN, where the stoichiometry was varied. Ga vacancies are found in all samples. Their concentration increases from 1016 to 1019... (Read more)
- 1006. Appl. Phys. Lett. 73, 3126 (1998) , “Laplace-transform deep-level transient spectroscopy studies of the G4 gold–hydrogen complex in silicon”, P. Deixler, J. Terry, I. D. Hawkins, and J. H. Evans-FreemanWe have studied n-type silicon containing gold and goldhydrogen complexes using high-resolution "Laplace" deep-level transient spectroscopy. This technique has enabled two quite distinct electron emission rates to be observed at temperatures between 240 and 300 K. These are... (Read more)
- 1007. Appl. Phys. Lett. 73, 3123 (1998) , “Recombination processes in InxGa1 – xN light-emitting diodes studied through optically detected magnetic resonance”, E. R. Glaser, T. A. Kennedy, and W. E. CarlosOptically detected magnetic resonance (ODMR) has been observed on photoluminescence from InGaN light-emitting diodes (LEDs) under low photoexcitation conditions. The samples have the usual p-i-n structure but without etching or metallizations. Distinct ODMR features from the... (Read more)
- 1008. Appl. Phys. Lett. 73, 2980 (1998) , “Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling”, V. C. Venezia and D. J. EagleshamA technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes advantage of the fact that metal impurities, such as Au, are trapped in the region of excess vacancies produced by MeV Si implants into silicon.... (Read more)
- 1009. Appl. Phys. Lett. 73, 2968 (1998) , “Photoluminescence of GaN: Effect of electron irradiation”, I. A. Buyanova, Mt. Wagner, W. M. Chen, and B. MonemarThe effect of electron irradiation on the optical properties of GaN material with various electrical conductivity (i.e., n type, compensated, and p type) is studied in detail by photoluminescence (PL) spectroscopy. Electron irradiation with a dose < 1017 cm ... (Read more)
- 1010. Appl. Phys. Lett. 73, 2962 (1998) , “Mechanism of photoluminescence of Si nanocrystals fabricated in a SiO2 matrix”, K. S. Zhuravlev, A. M. Gilinsky, and A. Yu. KobitskyThe luminescence properties of silicon nanocrystals fabricated by Si ion implantation into a SiO2 matrix and subsequent thermal annealing have been studied. To identify the mechanism of photoluminescence of Si nanocrystals, the dependencies of the steady-state photoluminescence on... (Read more)
- 1011. Appl. Phys. Lett. 73, 2929 (1998) , “Excitation of Er3 + ions in silicon dioxide films thermally grown on silicon”, A. KozaneckiWe investigate photoluminescence (PL) and photoluminescence excitation spectroscopy of Er3 + ions implanted into SiO2 films thermally grown on silicon wafers. We show that at 10 K the Er3 + PL excited with the 514.5 nm line of an Ar laser is limited by the total... (Read more)
- 1012. Appl. Phys. Lett. 73, 28 (1998) , “Spectroscopic evidence of the formation of N–H and N–D complexes in plasma hydrogenated and deuterated ZnTe:N layers”, H. Pelletier, A. Lusson, B. Theys, and J. ChevallierHomoepitaxially grown nitrogen-doped ZnTe layers have been exposed to a hydrogen (deuterium) plasma. After hydrogen (deuterium) diffusion, an infrared absorption band appears at 3346 cm1 (2489 cm1). It is assigned to the vibrational stretching mode of the NH... (Read more)
- 1013. Appl. Phys. Lett. 73, 2751 (1998) , “The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN”, A. F. WrightDensity-functional-theory calculations have been performed to study the effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN. Four candidate structures were examined and their formation energies were found to depend strongly on Fermi level and growth... (Read more)
- 1014. Appl. Phys. Lett. 73, 2639 (1998) , “Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon”, A. KinomuraThe efficient gettering to hydrogen-induced cavities in Si has been successfully demonstrated for low concentrations of Cu, unintentionally introduced during wafer processing. Secondary ion mass spectrometry showed up to 5 × 1012 cm 2Cu could be introduced into a... (Read more)
- 1015. Appl. Phys. Lett. 73, 2633 (1998) , “Precipitation of As in thermally oxidized ion-implanted Si crystals”, A. Terrasi and E. RiminiThe As precipitation occurring during thermal oxidation of As implanted Si crystals has been studied by extended x-ray absorption fine structure measurements. (100) Si wafers, implanted with 3 × 1015/cm2 and 3 × 1016/cm2 As+ ions at... (Read more)
- 1016. Appl. Phys. Lett. 73, 256 (1998) , “Electronic properties of defects introduced in p-type Si1 – xGex during ion etching”, S. A. Goodman, F. D. Auret, and M. MamorWe have investigated the electronic properties of defects introduced in boron-doped, strained p-type Si1 xGex (x = 00.15) during 0.75-keV argon Ar-ion etching, by deep level transient spectroscopy. These defects are compared to those... (Read more)
- 1017. Appl. Phys. Lett. 73, 2465 (1998) , “Carbon diffusion in silicon”, P. Werner and U. GöseleCarbon diffusion in silicon has been investigated by using a superlattice structure of carbon spikes (10 nm-wide, carbon concentration > 1019 cm 3, spikes spaced 100 nm apart) grown epitaxially by Si molecular beam epitaxy. Samples were annealed in the range between... (Read more)
- 1018. Appl. Phys. Lett. 73, 2456 (1998) , “Reduction in defect density by annealing in hydrogenated tetrahedral amorphous carbon”, N. M. J. Conway, A. Ilie, J. Robertson, and W. I. MilneElectronic applications of diamond-like carbon have been limited by its relatively high disorder and defect density. We find that the density of paramagnetic defects in hydrogenated tetrahedral amorphous carbon and the Urbach slope of the optical absorption edge can be reduced by annealing at 300... (Read more)
- 1019. Appl. Phys. Lett. 73, 2340 (1998) , “Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon”, Sergei Koveshnikov and Oleg KononchukGettering of Cu and Ni by 2.3 MeV Si ion-implantation-induced defects has been investigated in epitaxial silicon as a function of annealing temperature, time, and cooling rate. Secondary ion mass spectrometry revealed two distinct gettering regions, the position of which correlated with the ion... (Read more)
- 1020. Appl. Phys. Lett. 73, 2331 (1998) , “Energy levels of Zn in Si1 – XGeX alloys”, S. Voß, H. Bracht, and N. A. StolwijkDeep level transient spectroscopy measurements were performed on Zn-doped Si1 XGeX with X between 0 and 0.34. Our investigations reveal two deep hole traps which are attributed to the acceptor states Zn0/ and Zn/2 ... (Read more)
- 1021. Appl. Phys. Lett. 73, 2308 (1998) , “Ultraviolet cathodoluminescence from diamond layers after doping by means of boron-ion implantation”, Johan F. PrinsBoron-doped diamond layers have been generated in insulating (type IIa) diamonds by means of ion implantation. Cathodoluminescence measurements were used to monitor the layers during this process. It was found that the activation of the boron acceptors, followed by suitable annealing, gave rise to... (Read more)
- 1022. Appl. Phys. Lett. 73, 2170 (1998) , “Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be”, R. L. Maltez, Z. Liliental-Weber, and J. WashburnCharacteristic 1.54 µm 4f-4f emission has been observed from Er3 + centers in Er-implanted and annealed, low-temperature grown GaAs:Be samples, while cross-sectional transmission electron microscopy (TEM) studies reveal very little structural damage for... (Read more)
- 1023. Appl. Phys. Lett. 73, 2167 (1998) , “Injection level dependence of the defect-related carrier lifetime in light-degraded boron-doped Czochralski silicon”, Jan Schmidt, Christopher Berge, and Armin G. AberleThe carrier recombination lifetime in light-degraded boron-doped 1 cm Czochralski-grown silicon wafers is measured as a function of the bulk excess carrier concentration n. The measurements are performed with the quasi-steady state photoconductance method and cover a large injection level... (Read more)
- 1024. Appl. Phys. Lett. 73, 2024 (1998) , “Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy”, H. Nagai, Q. S. Zhu, Y. Kawaguchi, K. Hiramatsu, and N. SawakiHole trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy (MOVPE) are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8 × 1019 cm 3, but the hole concentration was as low as 1.3 ×... (Read more)
- 1025. Appl. Phys. Lett. 73, 2015 (1998) , “Transient enhanced diffusion from decaborane molecular ion implantation”, Aditya Agarwal, H.-J. Gossmann, D. C. Jacobson, and D. J. EagleshamTransient enhanced diffusion (TED) from implantation of 5 keV B10H14 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 1014 and 1015 cm 2. Boron diffusivity during annealing was extracted from secondary ion... (Read more)
- 1026. Appl. Phys. Lett. 73, 1877 (1998) , “Thermal stability of 2H-implanted n- and p-type GaN”, S. J. PeartonImplantation of 2H + into n- and p-type GaN creates high resistivity material in which the resistance displays activation energies of 0.8 and 0.9 eV, respectively. Annealing at 500 °C restores the initial, preimplanted resistance of the n-GaN, due to... (Read more)
- 1027. Appl. Phys. Lett. 73, 1838 (1998) , “Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions”, J. Zhao, D. S. Mao, Z. X. Lin, B. Y. Jiang, Y. H. Yu, and X. H. LiuIntense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films co-implanted with Si and C is reported. A flat Si profile was first implanted, followed by 1100 °C annealing for 60 min. C ions were subsequently used to be implanted into the same... (Read more)
- 1028. Appl. Phys. Lett. 73, 1835 (1998) , “Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy”, D. J. As, T. Simonsmeier, B. Schöttker, T. Frey, and D. SchikoraThe incorporation and optical properties of Mg in cubic GaN (c-GaN) epilayers grown by rf plasma-assisted molecular beam epitaxy on (100) GaAs are investigated by secondary ion mass spectroscopy and low-temperature photoluminescence (PL). By varying the Mg flux by more than four orders of... (Read more)
- 1029. Appl. Phys. Lett. 73, 1622 (1998) , “Optical activation of Be implanted into GaN”, C. Ronning, E. P. Carlson, D. B. Thomson, and R. F. DavisSingle crystalline (0001) gallium nitride layers were implanted with beryllium. Photoluminescence (PL) measurements were subsequently performed as a function of implantation dose and annealing temperature. One new line in the PL spectra at 3.35 eV provided strong evidence for the presence of... (Read more)
- 1030. Appl. Phys. Lett. 73, 1574 (1998) , “Study of the optical properties of fused quartz after a sequential implantation with Si and Au ions”, A. Oliver, J. C. Cheang-Wong, A. Crespo, J. M. Hernández, C. Solís, E. Muñoz, and R. Espejel-MoralesImplantation of Au ions into Si-implanted fused quartz strongly enhances the photoluminescence (PL) intensity around 630 nm measured after subsequent sample annealing at 900 °C. This effect is attributed to the enhancement of the formation of Si nanocrystals by the presence of Au ions and not by... (Read more)
- 1031. Appl. Phys. Lett. 73, 1493 (1998) , “Edge emission observed in heavily boron-doped diamond films epitaxially grown on platinum”, Yoshihiro Yokota, Takeshi Tachibana, Koichi Miyata, and Koji KobashiCathodoluminescence (CL) spectra of diamond films epitaxially grown on single crystal platinum (111) have been investigated at room temperature and 89 K. It was found that the CL spectra of the heavily boron-doped (> 3 × 1020 cm 3) diamond films of more than 16... (Read more)
- 1032. Appl. Phys. Lett. 73, 1406 (1998) , “Lattice location of Si in ion implanted GaN”, H. Kobayashi and W. M. GibsonThe lattice location of Si in GaN has been investigated by ion channeling in combination with Rutherford backscattering spectrometry, particle induced x-ray emission, and nuclear reaction analysis. Metalorganic chemical vapor deposition grown GaN on c-plane sapphire substrates and implanted... (Read more)
- 1033. Appl. Phys. Lett. 73, 1358 (1998) , “Optical modulation of bulk one-phonon state in diamond”, Y. Mita, H. Kanehara, Y. Adachi, and Y. NisidaInfrared absorption and electron spin resonance measurements have been performed in nitrogen-containing mixed-type diamonds under several illumination conditions. It has been observed that bulk one-phonon absorption spectra are modulated by illumination of higher than 2.0 eV in photon energy and the... (Read more)
- 1034. Appl. Phys. Lett. 73, 1275 (1998) , “Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP”, S. Fung, Y. W. Zhao, C. D. Beling, X. L. Xu, and M. GongThe concentration of hydrogenindium vacancy complex VInH4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The VInH4 complex is found to be a... (Read more)
- 1035. Appl. Phys. Lett. 73, 1206 (1998) , “Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures”, O. Kononchuk, K. G. Korablev, N. Yarykin, and G. A. RozgonyiThe redistribution of iron implanted into the oxide layer of silicon-on-insulator structures has been measured using the secondary ion mass spectroscopy technique after annealing at 9001050 °C. Iron diffusion has been found to be much faster in the oxide prepared by the... (Read more)
- 1036. Appl. Phys. Lett. 73, 1188 (1998) , “Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy”, J. Jayapalan and B. J. SkrommeThe optical properties of n-type GaN grown by hydride vapor phase epitaxy, with intentional Si doping levels ranging from nominally undoped to ND NA = 4 × 1017 cm 3, are investigated using low... (Read more)
- 1037. Appl. Phys. Lett. 73, 1122 (1998) , “First-principles exploration of possible trap terminators in SiO2”, Ayumi YokozawaOxygen vacancies (O vacancies) are considered to be charge trap centers in SiO2. This letter explores possible terminators of Si-dangling bonds associated with the O vacancies by performing first-principles total energy calculations. The present exploration is focused on the terminators... (Read more)
- 1038. Appl. Phys. Lett. 72, 79 (1998) , “Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing”, V. V. Afanas'ev and A. StesmansAnnealing of SiO2/(100)Si interfaces in hydrogen in the temperature range of 500800 °C is found to introduce a considerable density of fixed positive charge. The charge is diamagnetic, and shows no correlation with any kind of dangling bond defects at the Si surface or in the... (Read more)
- 1039. Appl. Phys. Lett. 72, 728 (1998) , “Local environment of erbium atoms in amorphous hydrogenated silicon”, V. F. Masterov, F. S. Nasredinov, and P. P. SereginThe 169Er(169Tm)emission Mössbauer spectroscopy has evidenced that photoluminescence centers in Er-doped amorphous hydrogenated silicon are [ErO] clusters. The local environment of the Er3 + ions in the clusters is similar to the Er3 + ... (Read more)
- 1040. Appl. Phys. Lett. 72, 70 (1998) , “Excitation density dependence of photoluminescence in GaN:Mg”, Eunsoon Oh, Hyeongsoo Park, and Yongjo ParkContinuous redshift of an emission from 3.23 to 2.85 eV with decreasing excitation density is observed in the photoluminescence spectra of highly doped GaN:Mg. It has been explained by the formation of minibands originating from the overlap of deep levels and shallow acceptor levels. For nominally... (Read more)
- 1041. Appl. Phys. Lett. 72, 67 (1998) , “Capture of vacancies by extrinsic dislocation loops in silicon”, S. B. Herner, H.-J. Gossmann, F. H. Baumann, G. H. Gilmer, and D. C. JacobsonThe capture of a flux of vacancies in Si by a band of extrinsic dislocation loops has been observed in Sb doping superlattices. Annealing Sb doping superlattices containing a band of dislocation loops in NH3 results in an injection of vacancies, which enhances the diffusion of Sb spikes... (Read more)
- 1042. Appl. Phys. Lett. 72, 590 (1998) , “Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs”, J. Darmo and F. DubeckýA deep-level donor state with signatures similar to the EL6 level observed in low-temperature-grown molecular beam epitaxial (MBE) GaAs grown at 250 °C and annealed in the temperature range 310370 °C was studied. The annealing kinetics of this level suggest a confined pair... (Read more)
- 1043. Appl. Phys. Lett. 72, 554 (1998) , “Hydrogen-related photoluminescence in CdTe”, J. Hamann, D. Blass, C. Casimir, T. Filz, V. Ostheimer, C. Schmitz, H. Wolf, and Th. WichertCdTe, nominally undoped, was exposed to a hydrogen plasma and to low energy H+ implantation. Under both conditions, seven typical photoluminescence lines are observed in the excitonic region. They are assigned to the presence of hydrogen in CdTe. ©1998 American Institute of... (Read more)
- 1044. Appl. Phys. Lett. 72, 474 (1998) , “The dissociation energy and the charge state of a copper-pair center in silicon”, A. A. Istratov, H. Hieslmair, T. Heiser, C. Flink, and E. R. WeberThermal dissociation of Cu pairs was studied in p-type silicon. The dissociation energy of the Cu pair was found to be 1.02 ± 0.07 eV, twice as high as the binding energy of a Coulombically bound donor-acceptor pair placed on nearest neighbor 111" align="middle"> sites. This implies that... (Read more)
- 1045. Appl. Phys. Lett. 72, 468 (1998) , “Deep levels in Er-doped liquid phase epitaxy grown silicon”, A. Cavallini and B. FraboniThe optical activity of Er-doped silicon is related to the presence of defects which enhance the typical radiative transition at 0.8 eV but whose nature and properties are still largely unknown. We have investigated the deep levels present in Er-doped liquid phase epitaxy silicon to identify the... (Read more)
- 1046. Appl. Phys. Lett. 72, 459 (1998) , “Doping of AlxGa1 – xN”, C. Stampfl and Chris G. Van de WalleN-type AlxGa1 xN exhibits a dramatic decrease in the free-carrier concentration for x= " align="bottom">0.40. Based on first-principles calculations, we propose that two effects are responsible for this behavior: (i) in the case of doping with... (Read more)
- 1047. Appl. Phys. Lett. 72, 448 (1998) , “Electron-irradiation-induced deep level in n-type GaN”, Z.-Q. Fang, J. W. Hemsky, and D. C. LookDeep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC 0.18 eV. The production rate is approximately 0.2 cm 1, lower than the rate of 1... (Read more)
- 1048. Appl. Phys. Lett. 72, 442 (1998) , “The behavior of As precipitates in low-temperature-grown GaAs”, J. C. BourgoinWe analyze the kinetics associated with the concentration and the growth of As precipitates during annealing in low-temperature-grown GaAs layers. We correlate them with that associated with the annealing of the As antisite related defect. This allows us to deduce that all these kinetics are... (Read more)
- 1049. Appl. Phys. Lett. 72, 371 (1998) , “Microscopic nature of Staebler-Wronski defect formation in amorphous silicon”, R. Biswas and B. C. PanLight-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H2*" align="middle">... (Read more)
- 1050. Appl. Phys. Lett. 72, 3467 (1998) , “Theoretical investigation of edge dislocations in AlN”, A. F. WrightThe structures and formation energies of neutral and charged edge dislocations in AlN are investigated via density-functional-theory calculations. Stoichiometric structures having full and open cores are considered as well as nonstoichiometric structures having aluminum or nitrogen vacancies along... (Read more)
- 1051. Appl. Phys. Lett. 72, 3326 (1998) , “Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature”, N. A. Sobolev, O. B. Gusev, and E. I. ShekThe behavior of luminescence spectra and structural defects in single crystal Czochralski silicon after erbium implantation at 1 MeV energy and 1 × 1013 cm 2 dose with subsequent annealing at 1100 °C for 0.253 h in an argon or chlorine-containing ambience... (Read more)
- 1052. Appl. Phys. Lett. 72, 3306 (1998) , “Dominant defect levels in diamond thin films: A photocurrent and electron paramagnetic resonance study”, M. Nesládek and L. M. StalsCharacteristic features in photocurrent (PC) and electron paramagnetic resonance (EPR) spectra are discussed and attributed to main defects in the gap of optical-quality chemical vapor deposited diamond. A shoulder in the PC spectra with an onset at about 2.2 eV is attributed to the... (Read more)
- 1053. Appl. Phys. Lett. 72, 3181 (1998) , “Materials integration of gallium arsenide and silicon by wafer bonding”, P. Kopperschmidt, S. Senz, G. Kästner, D. Hesse, and U. M. GöseleWe present a technique for the fabrication of materials integration of (100) silicon and (100) gallium arsenide by direct wafer bonding. GaAs wafers 3 in. in diameter were hydrophobically bonded to commercially available 3 in. silicon-on-sapphire wafers at room temperature. After successive... (Read more)
- 1054. Appl. Phys. Lett. 72, 3178 (1998) , “Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation”, M. Mamor, F. D. Auret, S. A. Goodman, W. E. Meyer, and G. MyburgTitanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 68 × 1016 cm 3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. We report the... (Read more)
- 1055. Appl. Phys. Lett. 72, 3044 (1998) , “Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions”, S. Fatima, J. Wong-Leung, J. Fitz Gerald, and C. JagadishPreamorphous damage in p-type Si implanted with MeV Si ions and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si was implanted with 4 MeV Si at doses from 1 × 1013 to ... (Read more)
- 1056. Appl. Phys. Lett. 72, 3029 (1998) , “Identification of Ag-acceptor related photoluminescence in 111Ag doped CdTe”, J. HamannBridgman-grown, nominally undoped CdTe crystals were doped with Ag by implanting radioactive 111Ag. Photoluminescence spectra of the crystals show a donor-acceptor pair (DAP) line at 1.491 eV. The decrease of the intensity of this line with a half life of... (Read more)
- 1057. Appl. Phys. Lett. 72, 3026 (1998) , “Electrical characterization of hole traps in p-type ZnSe and ZnSSe grown by molecular beam epitaxy”, D. Seghier, I. S. Hauksson, and H. P. GislasonUsing deep-level transient spectroscopy (DLTS) and admittance spectroscopy we investigated nitrogen doped ZnSe and ZnSSe layers grown on p-type GaAs substrates by molecular beam epitaxy. Three major hole traps denoted T1, T2, and T3 were observed with energy levels at... (Read more)
- 1058. Appl. Phys. Lett. 72, 302 (1998) , “Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP”, R. Ajjel, M. A. Zaidi, and S. AlayaThe electrical properties of chromium-related defects in GaP are investigated. Using deep-level transient spectroscopy, a related deep level is observed in p-type GaP exhibiting an activation energy, associated with hole emission, of 0.5 eV. Detailed capacitance transient investigations were... (Read more)
- 1059. Appl. Phys. Lett. 72, 2838 (1998) , “Fine structure of near-band-edge photoluminescence in He + -irradiated GaN grown on SiC”, V. A. JoshkinThe effect of He ion implantation on the optical properties of epitaxial GaN-on-SiC was studied. We observed that He + irradiation increases the relative intensity of the "blue emission" and resistivity of GaN films and decreases the intensity of the near-band-edge... (Read more)
- 1060. Appl. Phys. Lett. 72, 2739 (1998) , “Deep level traps in the extended tail region of boron-implanted n-type 6H–SiC”, M. Gong, C. V. Reddy, C. D. Beling, and S. FungDeep traps in the boron extended tail region of ion implanted 6HSiC pn junctions formed during annealing have been studied using deep level transient spectroscopy. Dramatically high concentrations of ~ 1016 cm 3 of the D center have been... (Read more)
- 1061. Appl. Phys. Lett. 72, 2683 (1998) , “Influence of oxygen plasma treatments on the structural properties of c-Si”, N. H. Nickel and I. SieberThe effects of hydrogen and oxygen plasma treatments on the structural properties of n-type c-Si were examined. Specimens were exposed to either an oxygen or a hydrogen electron-cyclotron-resonance plasma in a temperature range of 240385 °C. Hydrogenations performed at low... (Read more)
- 1062. Appl. Phys. Lett. 72, 2589 (1998) , “Raman scattering in ion-implanted GaN”, W. Limmer, W. Ritter, and R. SauerRaman measurements were performed on molecular beam epitaxially grown GaN before and after implantation with Ar + , Mg + , P + , C + , and Ca + ions. With increasing ion dose, new Raman peaks arise at 300, 360, 420, and 670 cm ... (Read more)
- 1063. Appl. Phys. Lett. 72, 244 (1998) , “Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy”, John T. Torvik and Jacques I. PankoveWe investigate the optical properties of GaN grown over SiO2 on SiC substrates by electron cyclotron resonance assisted molecular beam epitaxy. The photoluminescence spectra and refractive index of GaN were compared for GaN/SiO2/SiC and GaN/SiC. Strong band-edge luminescence... (Read more)
- 1064. Appl. Phys. Lett. 72, 2424 (1998) , “A new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructures”, P. D. HanA new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructures was studied using high-resolution electron microscopy. These dislocations can relieve the localized misfit strain, since they belong to either dissociated screw dislocations and/or partial dislocation... (Read more)
- 1065. Appl. Phys. Lett. 72, 2418 (1998) , “The influence of cavities and point defects on boron diffusion in silicon”, J. Wong-Leung, J. S. Williams, and M. PetraviCavities, formed in Si by hydrogen implantation and subsequent annealing, can provide strong sinks for metal interstitials and are ideal gettering sites for metal impurities. This letter reports the effect of cavities on the transient enhanced diffusion (TED) of boron. Boron implantation was carried... (Read more)
- 1066. Appl. Phys. Lett. 72, 2298 (1998) , “Surface photovoltage analysis of copper in p-type silicon”, Deepak A. Ramappa and Worth B. HenleySurface photovoltage minority carrier lifetime/diffusion length analysis of copper-doped p-type silicon was performed. Minority carrier recombination behavior of the deep level induced by copper and its thermal stability in the temperature range of 25300 °C was investigated. This... (Read more)
- 1067. Appl. Phys. Lett. 72, 2277 (1998) , “Deep centers in n-GaN grown by reactive molecular beam epitaxy”, Z-Q. Fang and D. C. LookDeep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by deep-level transient spectroscopy as a function of growth conditions. Si-doped GaN samples grown on a Si-doped n+-GaN contact layer at 800 °C show a dominant trap... (Read more)
- 1068. Appl. Phys. Lett. 72, 2126 (1998) , “Formation of PIn defect in annealed liquid-encapsulated Czochralski InP”, Y. W. Zhao, X. L. Xu, M. Gong, S. Fung, and C. D. BelingFourier transform infrared spectroscopy measurements have been carried out on liquid-encapsulated Czochralski-grown undoped InP wafers, which reproducibly become semi-insulating upon annealing in an ambient of phosphorus at 800900 °C. The measurements reveal a high concentration of... (Read more)
- 1069. Appl. Phys. Lett. 72, 2026 (1998) , “Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H–SiC”, S. Seshadri, G. W. Eldridge, and A. K. AgarwalRoom temperature free carrier concentrations exceeding 1 × 1018 cm 1 have been achieved with 1000 °C implants into 4HSiC using N and Al (1 × 1017 cm 3 using B). A decrease in resistivity is observed for annealing... (Read more)
- 1070. Appl. Phys. Lett. 72, 200 (1998) , “Carbon-induced undersaturation of silicon self-interstitials”, R. Scholz and U. GöseleCarbon diffusion into silicon is well behaved and does not generate any nonequilibrium point defects. We show that, in contrast, the diffusion of carbon incorporated in silicon well above its solid solubility will cause an undersaturation of silicon self-interstitials, which in turn may cause... (Read more)
- 1071. Appl. Phys. Lett. 72, 1820 (1998) , “Optical data storage in semi-insulating GaAs”, V. Alex and J. WeberWe observe a light-induced onoff switching of the selective donoracceptor pair excitation in bulk-grown semi-insulating GaAs. The spectral dependence of the switching process is related to the metastability of the EL2 defect. In the ground state, this As-antisite related midgap donor... (Read more)
- 1072. Appl. Phys. Lett. 72, 1709 (1998) , “Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion”, R. D. Chang, P. S. Choi, and D. L. KwongBoron segregation in an implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It was found that both the implant damage created by arsenic implantation and arsenic deactivation enhance the diffusion of the embedded boron layer toward the shallow As... (Read more)
- 1073. Appl. Phys. Lett. 72, 1703 (1998) , “Hydrogen-decorated lattice defects in proton implanted GaN”, Marcie G. Weinstein, C. Y. Song, and Michael StavolaSeveral vibrational bands were observed near 3100 cm 1 in GaN that had been implanted with hydrogen at room temperature and subsequently annealed. Our results indicate that these bands are due to nitrogen-dangling-bond defects created by the implantation that are decorated by... (Read more)
- 1074. Appl. Phys. Lett. 72, 1548 (1998) , “Room-temperature persistent spectral hole burning in Sm-doped KLaF4 crystals”, Nobuhiro Kodama and Tomoko TakahashiPersistent spectral hole burning is observed at room temperature in the excitation spectrum for the 7F0" align="bottom">5D0 transition of Sm2 + in KLaF4 single crystals. The hole width and depth are about 10 cm... (Read more)
- 1075. Appl. Phys. Lett. 72, 1472 (1998) , “Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser”, Takashi Sugino, Hideaki Ninomiya, and Junji ShirafujiPhosphidization of GaAs surfaces is attempted with phosphine gas photodecomposed by an ArF excimer laser. Electron traps at and near the phosphidized GaAs surfaces are characterized by isothermal capacitance transient spectroscopy measurements. Phosphidization leads to a reduction in the trap... (Read more)
- 1076. Appl. Phys. Lett. 72, 1362 (1998) , “Thermal donors in silicon-rich SiGe”, E. HildWe have investigated thermal donor formation at 450 °C in oxygen-rich SiGe with more than 1% Ge content by Hall measurements and infrared spectroscopy. These measurements prove the presence of double donors in annealed Si-rich SiGe samples. The ionization energies of the donors correspond to... (Read more)
- 1077. Appl. Phys. Lett. 72, 1347 (1998) , “Oxygen participation in the formation of the photoluminescence W center and the center's origin in ion-implanted silicon crystals”, M. NakamuraThe relationship between the photoluminescence (PL) intensity due to the W (or I1) center and the oxygen concentration in implanted silicon crystals was studied. The PL intensity of the W center decreased consistently with increasing oxygen concentration for carbon-implanted... (Read more)
- 1078. Appl. Phys. Lett. 72, 1326 (1998) , “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”, U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. SchlotterThe blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition grown GaN has been studied in a large number of samples with varying Mg content. It emerges near a Mg concentration of 1 × 1019 cm 3 and at higher concentrations... (Read more)
- 1079. Appl. Phys. Lett. 72, 1287 (1998) , “Thermal equilibrium of Ge-related defects in a GeO2-SiO2 glass”, Masahide Takahashi, Takumi Fujiwara, Taiji Kawachi, and Akira J. IkushimaIn a 15.7 GeO2 · 84.3 SiO2 glass prepared by a vapor axial deposition method, optical absorptions at 4.92 and 5.08 eV were observed from 300 to 600 K. The results were then compared with electron spin resonance (ESR) measurement using the same samples. The absorption at... (Read more)
- 1080. Appl. Phys. Lett. 72, 1232 (1998) , “Electron paramagnetic resonance and photoluminescence studies of chromium in SrS”, J. KreisslIsotropic features with hyperfine structures in electron paramagnetic resonance spectra of SrS powder phosphors, which reflect the abundance of the natural Cr isotopes, are attributed to the isolated Cr impurity. The isotropy, which is typical for a 4A2 ground state of a... (Read more)
- 1081. Appl. Phys. Lett. 72, 1226 (1998) , “Explanation for carrier removal and type conversion in irradiated silicon solar cells”, T. YamaguchiHeavy doses of radiation in space can cause the failure of n+/p/p+ silicon solar cells due to the gradual introduction of compensating defects into the base layer of the diode. In this letter, we show that the radiation-induced defects, which play the most... (Read more)
- 1082. Appl. Phys. Lett. 72, 1223 (1998) , “Anomalous temperature dependence of erbium-related electroluminescence in reverse biased silicon p–n junction”, A. M. Emel'yanovElectroluminescence (EL) and electrophysical characteristics of erbium and oxygen coimplanted and annealed pn junctions, characterized by higher values of the Er3 + -related EL intensity at ~ 1.54 µm in the breakdown regime at 300 K as compared with that... (Read more)
- 1083. Appl. Phys. Lett. 72, 1211 (1998) , “Deep level defects in n-type GaN grown by molecular beam epitaxy”, C. D. Wang, L. S. Yu, S. S. Lau, and E. T. YuDeep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E1=0.234 ± 0.006, E2=0.578 ±... (Read more)
- 1084. J. Appl. Phys. 84, 870 (1998) , “Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy”, A. Y. PolyakovDeep traps in undoped n-GaN layers grown by organometallic vapor phase epitaxy on sapphire substrates were studied by temperature dependent conductivity, photoinduced current transient spectroscopy (PICTS), thermally stimulated current, electron beam induced current (EBIC), and band edge... (Read more)
- 1085. J. Appl. Phys. 84, 704 (1998) , “Capture cross sections of electron irradiation induced defects in 6H–SiC”, C. Hemmingsson, N. T. Son, O. Kordina, and E. JanzénAn investigation of electron irradiation induced deep levels in 6HSiC p+n diodes grown by chemical vapor deposition has been performed. Deep level transient spectroscopy (DLTS) reveals several overlapping peaks in the temperature range 140650 K. The electron... (Read more)
- 1086. J. Appl. Phys. 84, 6753 (1998) , “Spin-dependent Auger effect on shallow donors in the CdF2:Mn2 + luminescence”, A. Kamiska and A. SuchockiIt is shown that the Auger effect on shallow donors in the luminescence of manganese ions in semiconducting CdF2:Mn, Y crystals is suppressed by a magnetic field. The Auger effect, which is a spin-dependent energy transfer from the manganese ions to the electrons occupying shallow donors,... (Read more)
- 1087. J. Appl. Phys. 84, 6689 (1998) , “Modified compensation model of CdTe”, M. Fiederle, C. Eiche, M. Salk, R. Schwarz, and K. W. BenzThe traditional compensation model to explain the high resistivity properties of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the middle of the band gap. A new compensation model based on a deep intrinsic donor level is presented. The compensation model is used... (Read more)
- 1088. J. Appl. Phys. 84, 6351 (1998) , “Influence of defects on electron emission from diamond films”, Yoshiyuki Show, Fumihiko Matsuoka, Masaharu Hayashi, and Hirokazu ItoThe correlation between paramagnetic defects and the electron emission in diamond films, which were deposited by the chemical vapor deposition method, has been studied using electron-spin-resonance (ESR) and field-emission measurements. The paramagnetic defects, which are a carbon dangling bond in... (Read more)
- 1089. J. Appl. Phys. 84, 6105 (1998) , “Deep level transient spectroscopy of synthetic type IIb diamond”, R. Zeisel, C. E. Nebel, and M. StutzmannDeep level transient spectroscopy (DLTS) and optically excited DLTS are applied to investigate the defect distribution in IIb synthetic diamond. Two defects at 0.83 and 1.25 eV above the valence band edge are detected. Capacitancevoltage measurements reveal a boron doping density of 7 ×... (Read more)
- 1090. J. Appl. Phys. 84, 5828 (1998) , “Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers”, L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, A. Kaschner, H. Siegle, and C. ThomsenThe compensation of Mg-doped GaN is systematically studied by low-temperature photoluminescence and Raman spectroscopy using a series of samples with different Mg concentrations. Strongly doped samples are found to be highly compensated in electrical measurements. The compensation mechanism is... (Read more)
- 1091. J. Appl. Phys. 84, 5826 (1998) , “Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide”, Lanying Lin, NuoFu Chen, Xingru Zhong, Hongjia He, and Chengji LiExperimental results have shown the fact that the deep-level centers in semi-insulating GaAs decrease with the improvement in stoichiometry. The electrical resistivity doubles when the concentration of EL2 centers decreases to a half. The microgravity-growth experiments also show that improved... (Read more)
- 1092. J. Appl. Phys. 84, 5647 (1998) , “Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films”, E. G. Gerstner and D. R. McKenzieElectrical measurements of nitrogen doped tetrahedral amorphous carbon (ta-C:N) thin films have revealed a reversible nonvolatile memory effect, related to the excitation and de-excitation of electrons between deep acceptor states and shallow donor states within the mobility gap. This... (Read more)
- 1093. J. Appl. Phys. 84, 5554 (1998) , “Properties of the titanium related level in Cd0.96Zn0.04Te crystals”, A. Zerrai and G. BremondSemi-insulating and n-type conductor titanium (Ti) doped CdZnTe has been investigated by deep level transient spectroscopy, deep level optical spectroscopy and photoinduced current transient spectroscopy. A main electron trap at 0.82 eV is detected and its electrical and optical... (Read more)
- 1094. J. Appl. Phys. 84, 5502 (1998) , “Effect of iron on oxygen precipitation in nitrogen-doped Czochralski silicon”, Xiwen Zhang, Deren Yang, Ruixin Fan, Jinxin Zhang, and Duanlin QueThe effect of iron on oxygen precipitation in nitrogen-doped Czochralski (NCZ) silicon was investigated by Fourier transform infrared spectroscopy at room temperature or at liquid helium temperature. The experiments revealed that the oxygen precipitation could be enhanced by the contamination of... (Read more)
- 1095. J. Appl. Phys. 84, 5345 (1998) , “A study of deep centers in Zn1 – xMgxSe crystals using deep-level transient spectroscopy”, R. Beyer and H. BurghardtDefects in Zn1 xMgxSe have been studied using deep-level transient spectroscopy. The crystalline material with low Mg concentration (x = 0.09, 0.15), obtained by the high-pressure Bridgman method, has a sphalerite structure and shows n-type... (Read more)
- 1096. J. Appl. Phys. 84, 5210 (1998) , “Characterization of Si + ion-implanted SiO2 films and silica glasses”, Soumyendu GuhaWe report here electron spin resonance (ESR), Raman scattering, photoluminescence (PL), and absorption studies of Si + ions implanted into silica glasses and thermally grown SiO2 films on Si wafers. The aim is to understand the defect formation and luminescence mechanism as... (Read more)
- 1097. J. Appl. Phys. 84, 4781 (1998) , “Simulation of clustering and transient enhanced diffusion of boron in silicon”, Masashi UematsuWe have simulated the postimplantation clustering and transient enhanced diffusion (TED) in boron profiles with peak concentrations below the boron (B) solubility limit. First, we derive an analytical formula for B clustering in terms of the reaction between B atoms and supersaturated... (Read more)
- 1098. J. Appl. Phys. 84, 4749 (1998) , “Electrical signatures and thermal stability of interstitial clusters in ion implanted Si”, J. L. Benton, K. Halliburton, S. Libertino, and D. J. EagleshamDeep level transient spectroscopy (DLTS) investigations have been used to characterize the electrical properties of interstitial clusters in ion-implanted Si. Both n- and p-type samples were implanted with 145 keV1.2 MeV Si ions to doses of 1 × 10105... (Read more)
- 1099. J. Appl. Phys. 84, 4590 (1998) , “Photoluminescence spectroscopy of Mg-doped GaN”, J. K. Sheu and Y. K. SuWe have grown Mg-doped GaN films by metalorganic chemical vapor deposition with various CP2Mg flow rates. After 750 °C postgrowth annealing, p-type GaN films with carrier concentrations and mobilities about 2 × 1017/cm3 and 10 cm2/V s,... (Read more)
- 1100. J. Appl. Phys. 84, 4537 (1998) , “Ga2 + hole centers and photostimulated luminescence in the x-ray storage phosphor RbBr:Ga + ”, U. Rogulis, S. Schweizer, S. Assmann, and J.-M. SpaethIt was previously shown that RbBr doped with Ga + is an efficient x-ray storage phosphor with a figure of merit comparable to that of the commercially used BaFBr:Eu2 + . The paramagnetic hole centers generated upon x-irradiation involved in the storage and read-out process... (Read more)
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