Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 91. J. Appl. Phys. 102, 063713 (2007) , “Peculiarities of neutron-transmutation phosphorous doping of 30Si enriched SiC crystals: Electron paramagnetic resonance study”, P. G. Baranov, B. Ya. Ber, I. V. Ilyin, A. N. Ionov, E. N. Mokhov, M. V. Muzafarova, M. A. Kaliteevskii, P. S. Kop'ev, A. K. Kaliteevskii, O. N. Godisov, and I. M. LazebnikWe have obtained a high concentration of P donor dopants in 6H-SiC enriched with 30Si and irradiated with thermal neutrons. It was established that annealing at a relatively low temperature of 1300 °C, i.e., 500–600 °C lower than that used for annealing SiC with the... (Read more)
- 92. J. Appl. Phys. 102, 024908 (2007) , “Nitrogen acceptors in bulk ZnO (000) substrates and homoepitaxial ZnO films”, B. T. Adekore, J. M. Pierce, R. F. Davis, D. W. Barlage, and J. F. MuthBulk single crystals of unintentionally doped ZnO having charge carrier concentration, ND−NA values of ~1017 cm−3 were implanted with N+ ions at dosages of 1015 and 1016 ... (Read more)
- 93. J. Appl. Phys. 102, 023522 (2007) , “Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation”, Q. T. Zhao, U. Breuer, St. Lenk, and S. MantlDiffusion of sulfur (S) in S+ ion implanted Si(100) was investigated after rapid thermal annealing as well as after nickel silicidation. At lower S doses, S segregates to the Si(100) surface when the defects created by the S implantation are reduced during annealing. If the S dose... (Read more)
- 94. J. Appl. Phys. 101, 124902 (2007) , “Origin of green luminescence of ZnO powders reacted with carbon black”, Yi Hu and H.-J. ChenZnO powders were synthesized by a precipitation method and annealed with carbon black. Electron paramagnetic resonance (EPR) and photoluminescence spectroscopies were conducted to study the characteristics of the ZnO powders. The g factor of the EPR signal shifted to lower value for the... (Read more)
- 95. J. Appl. Phys. 101, 113537 (2007) , “Reactions of interstitial carbon with impurities in silicon particle detectors”, L. F. Makarenko, M. Moll, F. P. Korshunov, and S. B. LastovskiWe present deep level transient spectroscopy (DLTS) data measured on very high resistivity n-type float-zone silicon detectors after irradiation with 6 MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to... (Read more)
- 96. J. Appl. Phys. 101, 113526 (2007) , “Thermal evolution of boron irradiation induced defects in predoped Si revealed by positron annihilation experiments”, P. M. G. Nambissan, P. V. Bhagwat, and M. B. KurupThe isochronal annealing behavior of high energy (25–72 MeV) boron ion irradiation induced defects in boron-doped silicon is monitored through measurements of positron lifetimes and three distinct defect-evolution stages are identified. The initial boron doping created a defect environment... (Read more)
- 97. J. Appl. Phys. 101, 103716 (2007) , “Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC”, Giovanni Alfieri and Tsunenobu Kimotop-type 4H-SiC epitaxial layers grown by chemical vapor deposition have been implanted with 200 and 100 keV protons at five different implantation temperatures. An isochronal annealing series was performed from 100 to 1800 °C, and Al-doped epitaxial layers have been... (Read more)
- 98. J. Appl. Phys. 101, 103704 (2007) , “Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers”, Katsunori Danno and Tsunenobu KimotoThe authors have investigated deep levels in as-grown and electron-irradiated p-type 4H-SiC epilayers by deep level transient spectroscopy. In as-grown epilayers, the D center and four deep levels are observed. In p-type 4H-SiC, reactive ion etching followed by thermal treatment (at... (Read more)
- 99. J. Appl. Phys. 101, 093706 (2007) , “Persistent photoinduced changes in charge states of transition-metal donors in hydrothermally grown ZnO crystals”, Yongquan Jiang, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to monitor photoinduced changes in the charge states of deep transition-metal donors (Mn, Fe, Co, and Ni), shallow donors (Al and Ga), and lithium acceptors in a hydrothermally grown ZnO crystal. All of these impurities except the lithium were... (Read more)
- 100. J. Appl. Phys. 101, 086106 (2007) , “Electron irradiation induced deep centers in hydrothermally grown ZnO”, Z.-Q. Fang, B. Claflin, D. C. Look, and G. C. FarlowAn n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ~108 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation... (Read more)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)