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- 51. Phys. Rev. B 78, 033202 (2008) , “Divacancy clustering in neutron-irradiated and annealed n-type germanium”, K. Kuitunen, F. Tuomisto, J. Slotte, and I. CapanWe have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation, the Sb-doped samples [(Sb)=1.5×1015 cm−3] were annealed at 473, 673, and 773 K for 30 min. The positron lifetime was measured as a function of temperature... (Read more)
- 52. Phys. Rev. B 77, 155214 (2008) , “Optical absorption and electron paramagnetic resonance of the Ealpha[prime]" align="middle"> center in amorphous silicon dioxide”, G. Buscarino, R. Boscaino, S. Agnello, and F. M. GelardiWe report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the Ealpha[prime]" align="middle"> point defect in amorphous silicon dioxide (a-SiO2). This defect has been studied in β-ray irradiated and... (Read more)
- 53. Phys. Rev. B 77, 081201(R) (2008) , “Electron paramagnetic resonance studies of the neutral nitrogen vacancy in diamond”, S. Felton, A. M. Edmonds, M. E. Newton, P. M. Martineau, D. Fisher, and D. J. TwitchenDespite the numerous experimental and theoretical studies on the negatively charged nitrogen vacancy center (NV−) in diamond and the predictions that the neutral nitrogen vacancy center (NV0) should have an S= ground state, NV0 has not previously been... (Read more)
- 54. Phys. Rev. B 77, 073206 (2008) , “Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon”, J. H. Bleka, I. Pintilie, E. V. Monakhov, B. S. Avset, and B. G. SvenssonIn hydrogenated high-purity Si, the vacancy-oxygen (VO) center is shown to anneal already at temperatures below 200 °C and is replaced by a center, identified as a vacancy-oxygen-hydrogen complex, with an energy level 0.37 eV below the conduction-band edge and a rather low thermal... (Read more)
- 55. Phys. Rev. B 77, 045204 (2008) , “Vacancy clustering and acceptor activation in nitrogen-implanted ZnO”, Thomas Moe Børseth, Filip Tuomisto, Jens S. Christensen, Edouard V. Monakhov, Bengt G. Svensson, and Andrej Yu. KuznetsovThe role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220 keV N implantation using... (Read more)
- 56. Phys. Rev. B 77, 035201 (2008) , “Native defect properties and p-type doping efficiency in group-IIA doped wurtzite AlN”, Yong Zhang, Wen Liu and Hanben NiuUsing the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p-type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that... (Read more)
- 57. Phys. Rev. Lett. 101, 247604 (2008) , “Measurement of Cu(II) Copper Defect Dipoles in Ferroelectric PbTiO3 Using Electron-Nuclear Double Resonance”, R. R. Garipov, J.-M. Spaeth, and D. J. KeeblePoint defects associated with Cu(II) in ferroelectric PbTiO3 were determined using pulsed electron-nuclear double resonance (ENDOR). Three centers were observed, and neighbor 207Pb superhyperfine tensors to the third shell of equivalent Pb ions measured. The ENDOR angular... (Read more)
- 58. Phys. Rev. Lett. 101, 177204 (2008) , “Diffusion of Interstitial Mn in the Dilute Magnetic Semiconductor (Ga,Mn)As: The Effect of a Charge State”, V. I. Baykov, P. A. Korzhavyi, and B. JohanssonMigration barriers for diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As are studied using first-principles calculations. The diffusion pathway goes through two types of interstitial sites: As coordinated and Ga coordinated. The energy profile along the path is found to... (Read more)
- 59. Phys. Rev. Lett. 100, 026803 (2008) , “Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks”, A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, and H. WiggersWe have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of... (Read more)
- 60. Appl. Phys. Lett. 91, 202111 (2007) , “Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC”, N. T. Son, P. Carlsson, A. Gällström, B. Magnusson, and E. JanzénElectron paramagnetic resonance was used to study semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range of 5.5×1015–1.1×1017 cm−3. Our results show that the electrical activation of V is low and hence only in... (Read more)
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