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Nitrogen donors in 6H-, 4H- and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine... (Read more)
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Investigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 3. Solid State Commun. 7, ii-iii (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system... (Read more)
- 4. Solid State Commun. 61, 199 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun and Qin Guo-gangA new defect, labled as Si-PK1, has been observed with EPR (Electron Paramagnetic Resonance) in neutron irradiated FZ-Si grown in argon, hydrogen and vacuum. Its symmetry has been determined to be triclinic symmetry, the lowest possible symmetry. Si-PK1 has not been observed in CZ-Si. It is not related to any common impurities in Si, like oxygen, carbon, phosphorus and boron, and it should be an intrinsic defect. Combining with the empirical classification of g tensor, it is concluded that Si-PK1 may be a multi-vacancy cluster.
- 5. Physica B 170, 155 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V.Gorelkinskii, N.N.NevinnyiA review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 ± 0.04 eV with a second-order pre-exponential factor, K0 = (1.25 ± 2.5) × 10-7 cm3/s. A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.
- 6. Phys.Rev.Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”,he electron paramagnetic resonance spectrum of float-zone silicon recorded after implantation with protons contains a strongly temperature dependent signal from a vacancy-type defect. The signal displays monoclinic-I symmetry below 65 K and trigonal symmetry above 100 K. This symmetry change, together with a hyperfine splitting from a single proton, allows an unequivocal identification with VH0, the neutral charge state of a vacancy containing a single hydrogen atom. The striking similarity between the properties of VH0 and VP0 (the E center) corroborate our identification.
- 7. J. Appl. Phys. 81, 107 (1997) , “A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon”, Jingwei XuTransient enhanced diffusion (TED) results from implantation damage creating enhanced diffusion of dopants in silicon. This phenomenon has mostly been studied using boron marker layers. We have performed an experiment using boron, phosphorus, and dislocation markers to compare TED effects. This... (Read more)
- 8. J. Appl. Phys. 81, 1180 (1997) , “Electronic defect levels in relaxed, epitaxial p-type Si1 – xGex layers produced by MeV proton irradiation”, E. V. Monakhov, A. Nylandsted Larsen, and P. KringhøjProton-irradiation-induced electronic defects in relaxed, epitaxial p-type Si1 xGex layers grown by molecular-beam epitaxy have been investigated by deep level transient spectroscopy (DLTS) for 0x0.25. Three dominating lines in the DLTS... (Read more)
- 9. J. Appl. Phys. 81, 146 (1997) , “Phase formation and stability of N + implanted SiC thin films”, R. CapellettiSilicon carbide amorphous thin films have been bombarded with 100 keV N ions. Infrared-absorption spectroscopy has been used to study the effect of increasing ion doses, up to 5 × 1017 N + cm 2, on the evolution of chemical bonding between Si, C, and N.... (Read more)
- 10. J. Appl. Phys. 81, 1645 (1997) , “Origin of infrared bands in neutron-irradiated silicon”, N. V. Sarlis, C. A. Londos, and L. G. FytrosInfrared absorption measurements were made of the localized vibrational modes due to defects produced in Czochralski-grown Si material after irradiation with fast neutrons and subsequent thermal treatments. The investigation was focused, in particular, on three satellite bands in the region of the A... (Read more)
- 11. J. Appl. Phys. 81, 1670 (1997) , “Diffusion modeling of zinc implanted into GaAs”, Michael P. Chase, Michael D. Deal, and James D. PlummerThe diffusion of implanted zinc in GaAs is studied and modeled for annealing temperatures of 625 through 850 °C. Secondary ion mass spectrometry data for the annealed profiles are presented. The substitutional interstitial diffusion (SID) mechanism is used to explain how the deviation of the... (Read more)
- 12. J. Appl. Phys. 81, 1877 (1997) , “Crystal-field splitting of Er + 3 in Si”, Shang Yuan RenTwo photoluminescent defects associated with Er + 3-doped Si are (i) a high-temperature defect (which appears after annealing at ~ 900 °C and produces five photoluminescence lines), and (ii) a low-temperature defect (which is created at lower annealing temperatures in addition to the... (Read more)
- 13. J. Appl. Phys. 81, 1929 (1997) , “Effects of microwave fields on recombination processes in 4H and 6H SiC”, N. T. Son, E. Sörman, W. M. Chen, J. P. Bergman, C. Hallin, O. Kordina, A. O. Konstantinov, B. Monemar, and E. JanzénThe effects of microwave fields on recombination processes, which are responsible for the optical detection of cyclotron resonance (ODCR) in 4H and 6H SiC epitaxial layers, have been investigated. We present experimental evidence indicating that the dominant mechanism of ODCR in SiC, at low... (Read more)
- 14. J. Appl. Phys. 81, 2173 (1997) , “Isoconcentration studies of antimony diffusion in silicon”, A. Nylandsted Larsen, P. Kringhøj, J. Lundsgaard Hansen, and S. Yu. ShiryaevThe diffusion of Sb in Si at concentrations around its solid solubility has been studied by isoconcentration experiments. The samples, grown by molecular-beam epitaxy, had constant Sb121 background dopings and a Sb123 spike embedded in this background. The diffusion was... (Read more)
- 15. J. Appl. Phys. 81, 2208 (1997) , “MeV ion implantation induced damage in relaxed Si1 – xGex”, A. Nylandsted LarsenThe damage produced by implanting, at room temperature, 3-µm-thick relaxed Si1 xGex alloys of high crystalline quality with 2 MeV Si + ions has been studied as a function of Ge content (x=0.04, 0.13, 0.24, or 0.36) and Si... (Read more)
- 16. J. Appl. Phys. 81, 2288 (1997) , “Space-charge limited conduction processes in polybenzo[c]thiophene films”, I. MusaWe present an observation of extensive space-charge limited conduction in polybenzo[c]thiophene. Strong evidence for the presence of three discrete trapping levels is shown with a possibility of a fourth trap level. The density of traps for the first three levels is found to be 5 ×... (Read more)
- 17. J. Appl. Phys. 81, 2391 (1997) , “Effect of Er dopant on the properties of In0.53Ga0.47As layers grown by liquid phase epitaxy”, S. Dhar, S. Paul, and M. MazumdarDetailed properties of In0.53Ga0.47As layers grown by liquid phase epitaxy from melts containing 0.04 and 0.1 wt % Er are reported. The carrier concentration in the material is reduced by almost two orders of magnitude as a result of Er doping. Low temperature photoluminescence... (Read more)
- 18. J. Appl. Phys. 81, 2566 (1997) , “Substitutional phosphorus doping of diamond by ion implantation”, H. Hofsäss, M. Dalmer, M. Restle, and C. RonningWe have studied the lattice sites of ion-implanted radioactive 33P in natural IIa diamond using the emission channeling technique. 33P ions were implanted at room temperature with 30 keV and a rather low dose of 1011 cm 2 and the implanted samples... (Read more)
- 19. J. Appl. Phys. 81, 260 (1997) , “Electrically active defects in as-implanted, deep buried layers in p-type silicon”, P. K. Giri, S. Dhar, V. N. Kulkarni, and Y. N. MohapatraWe have studied electrically active defects in buried layers, produced by heavy ion implantation in silicon, using both conventional deep level transient spectroscopy (DLTS) and an isothermal spectroscopic technique called time analyzed transient spectroscopy operated in constant capacitance mode... (Read more)
- 20. J. Appl. Phys. 81, 264 (1997) , “P and N compensation in diamond molecular orbital theory”, Alfred B. Anderson and Lubomir N. KostadinovCluster models and the atom superposition and electron delocalization molecular orbital theory calculations lead to an explanation for the ability of nitrogen to cause phosphorous incorporation in low pressure grown diamond films as observed recently by Cao and coworkers. The theory shows that... (Read more)
- 21. J. Appl. Phys. 81, 2904 (1997) , “Difference of interface trap passivation in Schottky contacts formed on (NH4)2Sx-treated GaAs and In0.5Ga0.5P”, C. R. Moon and Byung-Doo ChoeThe effects of (NH4)2Sx treatments on the interface traps in Au/n-GaAs and Au/n-In0.5Ga0.5P Schottky contacts are investigated by deep level transient spectroscopy measurements. The interface trap concentration in... (Read more)
- 22. J. Appl. Phys. 81, 2916 (1997) , “Positron annihilation in electron-irradiated SixGe1 – x bulk crystals”, Atsuo Kawasuso and Sohei OkadaPosition lifetime measurement for SixGe1 x bulk crystals has been performed. The bulk lifetime of positron in the crystals varied between those for Ge and Si. The dependence of the lifetime on the alloy composition showed an abrupt change at x =... (Read more)
- 23. J. Appl. Phys. 81, 3143 (1997) , “Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP”, L. Quintanilla, S. Dueñas, E. Castán, R. Pinacho, and J. BarbollaIn this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p+-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient... (Read more)
- 24. J. Appl. Phys. 81, 3151 (1997) , “Stoichiometry-dependent deep levels in p-type InP”, Jun-ichi NishizawaPhotocapacitance measurement is applied to investigate the stoichiometry-dependent deep levels in p-type InP crystals doped with Zn prepared by 4 h annealing at 700 °C under controlled phosphorus vapor pressure. Photocapacitance results reveal three dominant deep levels. A dominant deep... (Read more)
- 25. J. Appl. Phys. 81, 3170 (1997) , “Electron migration in BaFCl:Eu2+ phosphors”, Wei ChenHere we report the electron migration by photo- or thermostimulation in BaFCl:Eu2+. Electrons released from F centers may be trapped by other defect sites to form F aggregates or another type of F center and vice versa. This migration reduces the photostimulated... (Read more)
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