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- 1. Jpn. J. Appl. Phys. 49, 071302 (2010) , “Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper”, Minoru Nakamura and Susumu MurakamiWe have observed the formation of the Cu centers in p-type Si crystals diffused with dilute Cu between 400 and 1000 °C by deep-level transient spectroscopy (DLTS) and photoluminescence methods. For the samples diffused below 800 °C, a DLTS Cu center denoted as the CuDLB center was... (Read more)
- 2. Jpn. J. Appl. Phys. 49, 05FE02 (2010) , “Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers”, Kiyoteru Kobayashi and Taketoshi IdeThe current conduction in silicon carbon nitride (SiCN) dielectric films subjected to ultraviolet (UV) illumination at room temperature has been investigated. After exposure of SiCN single-layer and SiCN–SiO2 double-layer films to 4.9-eV UV illumination, leakage currents through... (Read more)
- 3. Jpn. J. Appl. Phys. 49, 051001 (2010) , “Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination center. The level is found to be responsible for the reverse bias current in the depletion region of n-type GaAsN schottky... (Read more)
- 4. Appl. Phys. Express 3, 051002 (2010) , “Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient spectroscopy and nitrogen concentration dependence of its density. It has a high capture cross section and not observed in N... (Read more)
- 5. Appl. Phys. Express 3, 031103 (2010) , “High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates”, Seunghwan Park, Tsutomu Minegishi, Dongcheol Oh, Hyunjae Lee, Toshinori Taishi, Jinsub Park, Mina Jung, Jiho Chang, Inho Im, Junseok Ha, Soonku Hong, Ichiro Yonenaga, Toyohiro Chikyow, and Takafumi YaoThis article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4×1016 cm-3, while ZnO:N shows n-type... (Read more)
- 6. Solid State Commun. 7, ii-iii (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system... (Read more)
- 7. Phys.Rev.Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”,he electron paramagnetic resonance spectrum of float-zone silicon recorded after implantation with protons contains a strongly temperature dependent signal from a vacancy-type defect. The signal displays monoclinic-I symmetry below 65 K and trigonal symmetry above 100 K. This symmetry change, together with a hyperfine splitting from a single proton, allows an unequivocal identification with VH0, the neutral charge state of a vacancy containing a single hydrogen atom. The striking similarity between the properties of VH0 and VP0 (the E center) corroborate our identification.
- 8. Physica B 170, 155 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V.Gorelkinskii, N.N.NevinnyiA review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 ± 0.04 eV with a second-order pre-exponential factor, K0 = (1.25 ± 2.5) × 10-7 cm3/s. A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.
- 9. Solid State Commun. 61, 199 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun and Qin Guo-gangA new defect, labled as Si-PK1, has been observed with EPR (Electron Paramagnetic Resonance) in neutron irradiated FZ-Si grown in argon, hydrogen and vacuum. Its symmetry has been determined to be triclinic symmetry, the lowest possible symmetry. Si-PK1 has not been observed in CZ-Si. It is not related to any common impurities in Si, like oxygen, carbon, phosphorus and boron, and it should be an intrinsic defect. Combining with the empirical classification of g tensor, it is concluded that Si-PK1 may be a multi-vacancy cluster.
- 10. Jpn. J. Appl. Phys. 46, L57 (2007) , “Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching”, Hisashi Shima, Fumiyoshi Takano, Yukio Tamai, Hiro Akinaga, and Isao H. Inoue.The resistance switching in Pt/Co–O/Pt trilayers has been successfully demonstrated. The trilayers were prepared by radio-frequency magnetron sputtering. The partial pressure of oxygen during sputtering and the post thermal process for the trilayer are crucial to realize the reproducible resistance switching. By adjusting oxygen partial pressure as well as post-annealing temperature and time, large resistance switching was steadily obtainable in both the as deposited and post-annealed Pt/Co–O/Pt trilayers. The resistance switching ratio exceeds 103, being sufficiently large for the resistance random access memory (RRAM). Co–O is regarded as a very promising oxide for RRAM having compatibilities with the conventional complementary metal–oxide semiconductor process. (Read more)
- 11. Jpn. J. Appl. Phys. 45, L991 (2006) , “Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides”, Kentaro Kinoshita, Tetsuro Tamura, Masaki Aoki, Yoshihiro Sugiyama and Hitoshi TanakaBoth lowering the “reset” current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. These requirements have been satisfied by using a hetero junction structure consisting of transition metal oxides, NiOy/TiOx/Pt, combining direct contact with the NiOy using a W-probe. It is considered that this configuration brought about extreme downsizing of the effective area of both the top and bottom electrodes for NiOy and thus decreased the number of filaments formed in “forming” process. Reducing the number of filaments is essential to these issues. (Read more)
- 12. Solid State Commun. 132, 333 (2004) , Pergamon Press , “Phase transitions investigation in ZnTe by thermoelectric power measurements at high pressure”, S.V. Ovsyannikov, V.V. ShchennikovThe pressure-induced phase transitions were studied in ZnTe by the thermoelectric power (S) technique. For the high-pressure trigonal phase P3121 cinnabar the large thermopower values S≈+400 correspond to semiconductor hole conductivity. During a transition into the orthorhombic structure Cmcm the value of S dropped by 40–50 times indicating metallic hole conductivity, like in the high pressure phases of other chalcogenides of II Group (HgSe, HgTe, CdTe) with Cmcm structure. In a transient region between the trigonal and orthorhombic phase (especially under decreasing pressure) a novel phase has been observed with a negative value of S. By analogy with other Zn and Cd chalcogenides whose NaCl phases have an electron type of conductivity the phase observed may have a NaCl structure. (Read more)
- 13. Solid State Commun. 126, 373 (2003) , Pergamon Press , “Thermoelectric power, magnetoresistance of lead chalcogenides in the region of phase transitions under pressure”, V.V. Shchennikov, S.V. OvsyannikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (N–E) effects were measured at ultrahigh pressure up to 20 GPa under closure of semiconductor gap at NaCl- and GeS-type phases of n-PbTe, p-PbSe and p-PbS. Near~3 GPa, the maxima of N–E effects and magnetoresistance (and hence of mobility of charge carriers) attributed to gapless state for PbTe and PbSe were established. The reversible sign inversion of transverse N–E effect indicating the change in scattering mechanism of charge carries have been revealed at high pressure phase of PbSe. The lowering of thermomagnetic effects with pressure gave the evidence of indirect semiconductor gap at high pressure GeS-type phases in contrary to NaCl-phases. (Read more)
- 14. Physica B 376-377, 177 (2006) , Elsevier , “Micro-characterisation of Si wafers by high-pressure thermopower technique”, S.V. Ovsyannikov, V.V. Shchennikov Jr, N.A. Shaydarova, V. V. Shchennikov, A. Misiuk, D. Yang, I.V. Antonova, S.N. ShaminIn the present work a set of Czochralski-grown silicon wafers (Cz–Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region (0-20GPa). The shifts were observed in pressure of semiconductor–metal phase transition Pt determined from the S(P) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen cO (which is always present in Cz–Si) on the other hand. The dependence exhibited a maximum of Pt near cO~9×1017cm-3. (Read more)
- 15. Physica B 344, 190 (2004) , Elsevier , “Thermomagnetic and thermoelectric properties of semiconductors (PbTe, PbSe) at ultrahigh pressures”, S.V. Ovsyannikov, V.V. ShchennikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (LNE, TNE) effects and the Maggi–Reghi–Leduc (MRL) effect were measured on PbTe and PbSe micro-samples at ultrahigh pressures upto 20 GPa. Values of the mobility of charge carriers as well as the scattering parameter were estimated both for the low- and high-pressure phase of PbTe and PbSe. At about 3 GPa, the maxima of both Nernst–Ettingshausen effects and magnetoresistance (MR) (and hence of the mobility of charge carriers μ), attributed to the gapless state of PbTe and PbSe were established. The TNE effect was found to be the largest among the effects measured, while the MRL was hardly visible even at the highest mobility values of the charge carriers. The possibilities for using thermomagnetic effects in micro-device technologies are discussed. (Read more)
- 16. Phys .Rev. Lett. 92, 178302 (2004) , “Nonvolatile Memory with Multilevel Switching: A Basic Model”, M. J. Rozenberg, I. H. Inoue, and M. J. SánchezThere is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the... (Read more)
- 17. Appl. Phys. Express 2, 091101 (2009) , “Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment”, Toru Hiyoshi and Tsunenobu KimotoBy thermal oxidation of 4H-SiC at 1150–1300 °C, the Z1/2 and EH6/7 concentrations can be reduced to below 1×1011 cm-3. By the oxidation, however, a high concentration of HK0 center (EV + 0.78 eV) is generated.... (Read more)
- 18. Jpn. J. Appl. Phys. 48, 081003 (2009) , “Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN”, Kuan-Ting Liu, Shoou-Jinn Chang, and Sean WuThe effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant... (Read more)
- 19. Appl. Phys. Express 2, 041101 (2009) , “Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation”, Toru Hiyoshi and Tsunenobu KimotoSignificant reduction of major deep levels in n-type 4H-SiC(0001) epilayers by means of thermal oxidation is demonstrated. By thermal oxidation of epilayers at 1150–1300 °C, the concentration of the Z1/2 and EH6/7 centers has been reduced from... (Read more)
- 20. Jpn. J. Appl. Phys. 48, 031205 (2009) , “Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide”, Kazuhiro Mochizuki, Haruka Shimizu, and Natsuki YokoyamaReported profiles of high-temperature (500 °C)-implanted boron ions diffused in 4H-silicon carbide at 1200–1900 °C for 5–90 min were simulated through a “dual-sublattice” modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a... (Read more)
- 21. J. Appl. Phys. 105, 053709 (2009) , “Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, David D. Caudel, Pijush Bhattacharya, Arnold Burger, Krishna C. Mandal, D. Johnstone, and S. A. PayneDeep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Three... (Read more)
- 22. Appl. Phys. Lett. 94, 092105 (2009) , “Interaction of oxygen with thermally induced vacancies in Czochralski silicon”, V. Akhmetov, G. Kissinger, and W. von AmmonComplexes consisting of a vacancy and four oxygen atoms, VO4, were found in oxygen-rich Czochralski silicon wafers subjected to rapid thermal annealing (RTA) at 1250 °C for 30 s in Ar/O2 atmosphere by means of Fourier transform infrared spectroscopy with enhanced... (Read more)
- 23. Appl. Phys. Lett. 94, 091903 (2009) , “Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys”, M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence spectroscopy was employed to study the impurity transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was observed in Mg-doped AlxGa1−xN alloys, which was identified to have the same origin as the... (Read more)
- 24. Phys. Rev. B 79, 075203 (2009) , “Hyperfine interaction in the ground state of the negatively charged nitrogen vacancy center in diamond”, S. Felton, A. M. Edmonds, and M. E. NewtonThe 14N, 15N, and 13C hyperfine interactions in the ground state of the negatively charged nitrogen vacancy (NV−) center have been investigated using electron-paramagnetic-resonance spectroscopy. The previously published parameters for the... (Read more)
- 25. Phys. Rev. B 79, 075201 (2009) , “First-principles studies of small arsenic interstitial complexes in crystalline silicon”, Yonghyun Kim, Taras A. Kirichenko, Ning Kong, Graeme Henkelman, and Sanjay K. BanerjeeWe present a first-principles study of the structure and dynamics of small As-interstitial complexes (AsI2, As2I2, AsI3, and As2I3) in crystalline Si. These complexes can be important components of stable As-interstitial clusters or... (Read more)
- 26. Phys. Rev. B 79, 075207 (2009) , “EPR study of local symmetry sites of Ce3+ in Pb1−xCexA (A=S, Se, and Te)”, X. Gratens, V. Bindilatti, V. A. Chitta, N. F. Oliveira, and Jr.The local site symmetry of Ce3+ ions in the diluted magnetic semiconductors Pb1−xCexA (A=S, Se, and Te) has been investigated by electron-paramagnetic resonance (EPR). The experiments were carried out on single crystals with cerium... (Read more)
- 27. Phys. Rev. Lett. 82, 113 - 116 (1999) , “First-Principles Study of Structural Bistability in Ga- and In-Doped CdF2”, C. H. Park and D. J. ChadiWe have identified the microscopic structures for the shallow and deep donor states of Ga and In donor impurities in CdF2 through first-principles calculations. The deep state arises from a large [100]-axis atomic displacement of a donor. It has all the properties of a DX center; i.e., it... (Read more)
- 28. Phys. Rev. Lett. 82, 1883 - 1886 (1999) , “Identification of Vacancy-Impurity Complexes in Highly n-Type Si”, K. Saarinen, J. Nissilä, H. Kauppinen, M. Hakala, M. J. Puska, P. Hautojärvi, and C. CorbelWe show that the detailed atomic structure of vacancy-impurity complexes in Si can be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies complexed with a single impurity, V-P and V-As, are identified in electron irradiated Si. The... (Read more)
- 29. Phys. Rev. Lett. 82, 2552 - 2555 (1999) , “Residual Native Shallow Donor in ZnO”, D. C. Look, J. W. Hemsky, and J. R. SizeloveHigh-energy electron irradiation in ZnO produces shallow donors at about EC-30 meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial ZnI or a... (Read more)
- 30. Phys. Rev. Lett. 82, 2111 - 2114 (1999) , “Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon”, A. Resende, R. Jones, S. Öberg, and P. R. BriddonFirst-principles local-density formalism cluster theory is used to determine the structure of Au- and Ag-hydrogen complexes in Si. The theory, with an empirical correction, is then applied to extract their donor and acceptor levels and these are compared with capacitance transient spectroscopic... (Read more)
- 31. Phys. Rev. Lett. 82, 3276 - 3279 (1999) , “Universality of the Bond-Breaking Mechanism in Defect Bistability: Observation of Open Volume in the Deep States of In and Ga in CdF2”, J. Nissilä, K. Saarinen, P. Hautojärvi, A. Suchocki, and J. M. LangerPositron annihilation experiments reveal an open-volume defect in the deep state atomic configurations of bistable donors In and Ga in CdF2. The size of the open volume is at least half of a monovacancy. The results are similar to those obtained previously for the DX centers in the... (Read more)
- 32. Phys. Rev. Lett. 82, 3819 - 3822 (1999) , “Direct Evidence of Phosphorus-Defect Complexes in n-Type Amorphous Silicon and Hydrogenated Amorphous Silicon”, Mihail P. Petkov, Marc H. Weber, Kelvin G. Lynn, Richard S. Crandall, and Vinita J. GhoshWe use positron annihilation spectroscopy (PAS) to identify the phosphorus-defect complex (*D-) in n-type hydrogenated amorphous Si ( a-Si:H). The positrons are attracted and localized at the small open volume associated with the dangling bond defects. The radiation detected... (Read more)
- 33. Phys. Rev. Lett. 82, 4870 - 4873 (1999) , “Theory of the Nucleation, Growth, and Structure of Hydrogen-Induced Extended Defects in Silicon”, F. A. Reboredo, M. Ferconi, and S. T. PantelidesImplantation and plasma indiffusion of H in crystalline Si are known to induce planar defects (platelets) whose structure has remained elusive. We report extensive first-principles calculations that reveal mechanisms for the nucleation and growth of aggregates of second-neighbor hydrogenated... (Read more)
- 34. Phys. Rev. Lett. 83, 372 - 375 (1999) , “Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica”, Peter E. Blöchl and James H. StathisHydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, are analyzed using first-principles calculations. Energetics and charge-state levels of oxygen vacancies, hydrogen, and their complexes in the silica framework are mapped out. The neutral hydrogen... (Read more)
- 35. Appl. Phys. Lett. 94, 061910 (2009) , “Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy”, M. J. Wang, L. Yuan, C. C. Cheng, C. D. Beling, and K. J. ChenDefect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180... (Read more)
- 36. Phys. Rev. Lett. 102, 065502 (2009) , “Transition Metal Impurities on the Bond-Centered Site in Germanium”, S. Decoster, S. Cottenier, B. De Vries, H. Emmerich, U. Wahl, J. G. Correia, and A. VantommeWe report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the... (Read more)
- 37. Phys. Rev. Lett. 83, 1351 - 1354 (1999) , “Symmetry of Molecular H2 in Si from a Uniaxial Stress Study of the 3618.4 cm-1 Vibrational Line”, J. Anna Zhou and Michael StavolaUniaxial stress has been used in conjunction with vibrational spectroscopy to probe the structure and microscopic properties of interstitial H2 in Si. The stress splitting pattern observed for the 3618.4 cm -1 line assigned to H2 is consistent with triclinic (... (Read more)
- 38. Phys. Rev. Lett. 83, 1990 - 1993 (1999) , “Thermally Activated Reorientation of Di-interstitial Defects in Silicon”, Jeongnim Kim, Florian Kirchhoff, Wilfried G. Aulbur, John W. Wilkins, Furrukh S. Khan, and Georg KresseWe propose a di-interstitial model for the P6 center commonly observed in ion-implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to... (Read more)
- 39. Phys. Rev. Lett. 83, 1799 - 1801 (1999) , “Planar Self-Interstitial in Silicon”, M. M. De Souza, C. K. Ngw, M. Shishkin, and E. M. Sankara NarayananThe aim of this paper is to demonstrate, for the first time, the possible existence of planar point defect silicon self-interstitials in the {311} plane. The results offer a plausible explanation as to why self-interstitials aggregate to form {311} defect clusters during ion implantation. These... (Read more)
- 40. Phys. Rev. Lett. 83, 3852 - 3855 (1999) , “Large Pairing Jahn-Teller Distortions Around Divacancies in Crystalline Silicon”, Serdar Öğüt and James R. ChelikowskyAb initio atomic and electronic structures of neutral (V2 0) and charged (V2 +,V2 -,V2 2-) Si divacancies are investigated using bulk-terminated clusters with up to ≈320 Si atoms. For the first... (Read more)
- 41. Phys. Rev. Lett. 83, 3254 - 3257 (1999) , “Magnetospectroscopy of Acceptors in “Blue” Diamonds”, Hyunjung Kim, A. K. Ramdas, S. Rodriguez, M. Grimsditch, and T. R. AnthonyThe Zeeman effect of the Δ′ [1s(p3/2):Γ8→1s(p1/2):Γ7] Raman line of boron acceptors in diamond exhibits the predicted eight components and four transitions within the Γ8 multiplet, discovered under diverse polarization... (Read more)
- 42. Phys. Rev. Lett. 83, 4582 - 4585 (1999) , “Alloy Splitting of Gold and Platinum Acceptor Levels in SiGe”, L. Dobaczewski, K. Gościński, K. Bonde Nielsen, A. Nylandsted Larsen, J. Lundsgaard Hansen, and A. R. PeakerLaplace transform deep level transient spectroscopy was used to study the acceptor levels of platinum and gold diffused into dilute (0– 5% Ge) SiGe alloys. We show that Ge atoms in the first and in the second shell of atoms surrounding the impurity perturb the electronic properties of the Au and... (Read more)
- 43. Phys. Rev. Lett. 83, 4345 - 4348 (1999) , “First-Principles Study of Boron Diffusion in Silicon”, W. Windl, M. M. Bunea, R. Stumpf, S. T. Dunham, and M. P. MasquelierIn this Letter we investigate boron diffusion as a function of the Fermi-level position in crystalline silicon using ab initio calculations. Based on our results, a new mechanism for B diffusion mediated by Si self-interstitials is proposed. Rather than kick out of B into a mobile channel, we find a... (Read more)
- 44. Phys. Rev. Lett. 83, 4140 - 4143 (1999) , “Spontaneous Symmetry Breaking of Acceptors in “Blue” Diamonds”, Hyunjung Kim, A. K. Ramdas, S. Rodriguez, M. Grimsditch, and T. R. AnthonyThe electronic Raman transition between the lower 1s(p3/2) and the higher 1s(p1/2) state of a hole bound to a boron acceptor in diamond, examined under the high resolution of a Fabry-Pérot interferometer, reveals a doublet separated by (0.81±0.15) cm-1, indicative... (Read more)
- 45. Phys. Rev. Lett. 83, 5294 - 5297 (1999) , “Novel Muonium State in CdS”, J. M. Gil, H. V. Alberto, R. C. Vilão, J. Piroto Duarte, P. J. Mendes, L. P. Ferreira, N. Ayres de Campos, A. Weidinger, J. Krauser, Ch. Niedermayer, and S. F. CoxA new type of muonium defect center has been observed in undoped CdS below 20 K. The hyperfine interaction amounts only to approximately 10-4 of the vacuum value, and is shown to have axial symmetry along the Cd-S bond direction. Results suggest that the muon is close to the sulfur... (Read more)
- 46. Phys. Rev. Lett. 84, 1495 - 1498 (2000) , “Lattice Location and Stability of Ion Implanted Cu in Si”, U. Wahl, A. Vantomme, G. Langouche, J. G. Correia, and ISOLDE CollaborationWe report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of β- particles emitted by the radioactive isotope 67Cu was monitored following room temperature implantation into Si single crystals and annealing up... (Read more)
- 47. Phys. Rev. B 79, 014102 (2009) , “Vacancy defect positron lifetimes in strontium titanate”, R. A. Mackie, S. Singh, J. Laverock, S. B. Dugdale, and D. J. KeebleThe results of positron-annihilation lifetime spectroscopy measurements on undoped, electron-irradiated, and Nb-doped SrTiO3 single crystals are reported. Perfect lattice and vacancy defect positron lifetimes were calculated using two different first-principles schemes. The Sr-vacancy... (Read more)
- 48. Phys. Rev. Lett. 84, 3137 - 3140 (2000) , “Electron-Irradiation-Induced Radiolytic Oxygen Generation and Microsegregation in Silicon Dioxide Polymorphs”, Marion A. StevensThe first direct in situ observations of the production and microsegregation of radiolytic interstitial oxygen resulting from electron beam irradiation of crystal and amorphous oxygen deficient SiO2 polymorphs has been made using cathodoluminescence (CL) microanalysis (spectroscopy and... (Read more)
- 49. Phys. Rev. Lett. 84, 4926 - 4929 (2000) , “Overcoordinated Hydrogens in the Carbon Vacancy: Donor Centers of SiC”, A. Gali, B. Aradi, P. Deák, W. J. Choyke, and N. T. SonEpitaxial silicon carbide is likely to contain hydrogen and vacancies ( V); therefore, V+nH complexes are likely to influence its electronic properties. Using ab initio calculations we show that neutral and positive H atoms are trapped by carbon vacancies ( VC) in three-center bonds with... (Read more)
- 50. Phys. Rev. B 78, 235204 (2008) , “Symmetry of the phosphorus donor in diamond from first principles”, Bozidar Butorac and Alison MainwoodPhosphorus is the only donor in diamond which can be used technologically. Several ab initio theoretical models have been published on substitutional phosphorus, and most of them have predicted that it should have tetrahedral or trigonal symmetry. Recent ab initio calculations... (Read more)
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