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- 201. J. Appl. Phys. 97, 023505 (2005) , “Nickel solubility in intrinsic and doped silicon”, A. A. Istratov and P. ZhangSolubility of nickel in intrinsic, moderately, and heavily doped n-type and p-type silicon was determined using instrumental neutron activation analysis. The solubility data for intrinsic silicon were found to be in good agreement with the literature data. In heavily doped... (Read more)
- 202. J. Appl. Phys. 97, 013528 (2005) , “Production and recovery of defects in phosphorus-implanted ZnO”, Z. Q. Chen, A. Kawasuso, Y. Xu, and H. NaramotoPhosphorus ions were implanted in ZnO single crystals with energies of 50380 keV having total doses of 4.2×10134.2×1015 cm2. Positron annihilation measurements reveal the introduction of vacancy clusters after implantation. These... (Read more)
- 203. J. Phys.: Condens. Matter 17, S3179 (2005) , IOP Publishing , “Phase transitions in PbSe under actions of fast neutron bombardment and pressure”, S.V. Ovsyannikov, V.V. Shchennikov, A.E. Kar’kin, B.N. GoshchitskiiIn this paper, the influences of fast neutron bombardment, high pressure and chemical substitution on the electronic properties of PbSe single crystals are studied. For the first time in p-PbSe an electronic transition has been established of 'metal–semiconductor' type accompanied by an... (Read more)
- 204. Phys. Rev. B 72, 245209 (2005) , “Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms”, N. Fukata, S. Fukuda, S. Sato, K. Ishioka, M. Kitajima, T. Hishita, and K. MurakamiThe formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of 10B with 11B were observed for some H-related... (Read more)
- 205. Phys. Rev. B 72, 235205 (2005) , “Passivation of copper in silicon by hydrogen”, C. D. Latham, M. Alatalo, R. M. Nieminen, R. Jones, S. Öberg, and P. R. BriddonThe structures and energies of model defects consisting of copper and hydrogen in silicon are calculated using the AIMPRO local-spin-density functional method. For isolated copper atoms, the lowest energy location is at the interstitial site with Td symmetry. Substitutional... (Read more)
- 206. Phys. Rev. B 72, 195211 (2005) , “Hydrogen local modes and shallow donors in ZnO”, G. Alvin Shi, Michael Stavola, S. J. Pearton, M. Thieme, E. V. Lavrov, and J. WeberThe annealing behavior of the free-carrier absorption, O-H vibrational absorption, and photoluminescence lines previously associated with H-related donors in ZnO has been studied. One set of H-related defects gives rise to O-H local vibrational mode absorption at either 3326 or 3611 ... (Read more)
- 207. Phys. Rev. B 72, 195207 (2005) , “Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon”, M. Mikelsen, E. V. Monakhov, G. Alfieri, B. S. Avset, and B. G. SvenssonIn this work the thermal kinetics of the transformation from the divacancy (V2) to the divacancy-oxygen (V2O) complex has been studied in detail, and activation energies, (Ea), have been obtained. Diffusion oxygenated float-zone silicon (DOFZ-Si)... (Read more)
- 208. Phys. Rev. B 72, 153201 (2005) , “Interstitial H2 in germanium by Raman scattering and ab initio calculations”, M. Hiller, E. V. Lavrov, J. Weber, B. Hourahine, R. Jones, and P. R. BriddonSingle-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K... (Read more)
- 209. Phys. Rev. B 72, 121201(R) (2005) , “*Cu0: A metastable configuration of the {Cus,Cui} pair in Si”, S. K. Estreicher, D. West, and M. SanatiFirst-principles theory shows that the substitutional-interstitial copper pair in Si (Si-CusCui) has a metastable state with Cui very near a tetrahedral interstitial site in a trigonal Cus-SiCui configuration... (Read more)
- 210. Phys. Rev. B 72, 115323 (2005) , “Defects in SiO2 as the possible origin of near interface traps in the SiC/SiO2 system: A systematic theoretical study”, J. M. Knaup, P. Deák, Th. Frauenheim, A. Gali, Z. Hajnal, and W. J. ChoykeA systematic study of the level positions of intrinsic and carbon defects in SiO2 is presented, based on density functional calculations with a hybrid functional in an α-quartz supercell. The results are analyzed from the point of view of the near interface traps (NIT), observed in... (Read more)
- 211. Phys. Rev. B 72, 085213 (2005) , “First-principles study of the structure and stability of oxygen defects in zinc oxide”, Paul Erhart, Andreas Klein, and Karsten AlbeA comparative study on the structure and stability of oxygen defects in ZnO is presented. By means of first-principles calculations based on local density functional theory we investigate the oxygen vacancy and different interstitial configurations of oxygen in various charge states. Our results... (Read more)
- 212. Phys. Rev. B 72, 085212 (2005) , “Photoconductivity and infrared absorption study of hydrogen-related shallow donors in ZnO”, E. V. Lavrov, F. Börrnert, and J. WeberVapor phase grown ZnO samples treated with hydrogen and/or deuterium plasma were studied by means of photoconductivity and infrared (IR) absorption spectroscopy. Three bands at 180, 240, and 310 cm1 were observed in the photoconductivity spectra of hydrogenated ZnO. These are... (Read more)
- 213. Phys. Rev. B 72, 085208 (2005) , “Capacitance transient study of the metastable M center in n-type 4H-SiC”, H. Kortegaard Nielsen, A. Hallén, and B. G. SvenssonThe metastable M center in n-type 4H silicon carbide is studied in detail after it has been introduced by 2.5 MeV proton irradiation with a fluence of 1×1012 cm2. The experimental procedures included deep-level transient spectroscopy, carrier... (Read more)
- 214. Phys. Rev. B 72, 085206 (2005) , “Introduction and recovery of point defects in electron-irradiated ZnO”, F. Tuomisto, K. Saarinen, D. C. Look, and G. C. FarlowWe have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (Eel=2 MeV, fluence 6×1017cm2) was performed at room temperature, and isochronal... (Read more)
- 215. Phys. Rev. B 72, 073205 (2005) , “Electronic behavior of rare-earth dopants in AlN: A density-functional study”, S. Petit, R. Jones, M. J. Shaw, P. R. Briddon, B. Hourahine, and T. FrauenheimLocal density functional calculations are carried out on Er, Eu, and Tm rare-earth (RE) dopants in hexagonal AlN. We find that the isolated impurities prefer to substitute for Al and, in contrast with isolated RE dopants in GaAs and GaN, REAl defects are electrically active and introduce... (Read more)
- 216. Phys. Rev. B 72, 035214 (2005) , “Vacancy-impurity complexes and limitations for implantation doping of diamond”, J. P. Goss, P. R. Briddon, M. J. Rayson, S. J. Sque, and R. JonesMany candidates have been proposed as shallow donors in diamond, but the small lattice constant means that many substitutional impurities generate large strains and thus yield low solubilities. Strained impurities favor complex formation with other defects and, in particular, the lattice vacancy. We... (Read more)
- 217. Phys. Rev. B 72, 035203 (2005) , “Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K”, L. S. Vlasenko and G. D. WatkinsIntrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K are studied by optical detection of electron paramagnetic resonance (ODEPR). Observed in the photoluminescence (PL) are ODEPR signals, which are identified with the oxygen vacancy, VO+"... (Read more)
- 218. Phys. Rev. B 72, 033202 (2005) , “Electron-nuclear double-resonance study of Mn2+ ions in ZnGeP2 crystals”, N. Y. Garces, L. E. Halliburton, P. G. Schunemann, and S. D. SetzlerElectron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) have been used to characterize isolated Mn2+ (3d5) ions in a bulk ZnGeP2 crystal grown by the horizontal Bridgman technique. From the EPR data, we obtain... (Read more)
- 219. Phys. Rev. B 72, 014115 (2005) , “Lattice sites of implanted Fe in Si”, U. Wahl, J. G. Correia, E. Rita, J. P. Araújo, J. C. Soares, and The ISOLDE CollaborationThe angular distribution of β particles emitted by the radioactive isotope 59Fe was monitored following implantation into Si single crystals at fluences from 1.4×1012 cm2 to 1×1014 cm2. We... (Read more)
- 220. Phys. Rev. B 71, 241201(R) (2005) , “Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission”, I. G. Ivanov, A. Henry, and E. JanzénThis paper deals with fitting the donor-acceptor pair luminescence due to P-Al pairs in 4H-SiC. It was possible to identify P at the Si cubic site as the shallower donor with ionization energy of 60.7 meV, as well as to distinguish the contribution in the spectrum from pairs involving this... (Read more)
- 221. Phys. Rev. B 71, 233201 (2005) , “Evidence for vacancy-interstitial pairs in Ib-type diamond”, Konstantin Iakoubovskii, Steen Dannefaer, and Andre StesmansDiamonds containing nitrogen in different forms have been irradiated by 3MeV electrons or 60Co gamma photons and characterized by optical absorption (OA) and electron spin resonance (ESR). An unusually low production rate of vacancies (V) and interstitials (I) was... (Read more)
- 222. Phys. Rev. B 71, 205212 (2005) , “Theoretical study of cation-related point defects in ZnGeP2”, Xiaoshu Jiang, M. S. Miao, and Walter R. L. LambrechtFirst-principles calculations are presented for the VZn and VGe cation vacancies and the ZnGe and GeZn antisites in ZnGeP2, using full-potential linearized muffin-tin orbital method supercell calculations in the local-density... (Read more)
- 223. Phys. Rev. B 71, 195201 (2005) , “Local modes of bond-centered hydrogen in Si:Ge and Ge:Si”, R. N. Pereira, B. Bech Nielsen, L. Dobaczewski, A. R. Peaker, and N. V. AbrosimovLocal vibrational modes of bond-centered hydrogen have been identified in Ge-doped Si (Si:Ge) and Si-doped Ge (Ge:Si) with in-situ-type infrared absorption spectroscopy. The infrared absorbance spectra recorded at 8 K immediately after implantation of the very dilute Si:Ge and Ge:Si alloys... (Read more)
- 224. Phys. Rev. B 71, 165211 (2005) , “Theory of boron-vacancy complexes in silicon”, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergThe substitutional boron-vacancy BsV complex in silicon is investigated using the local density functional theory. These theoretical results give an explanation of the experimentally reported, well established metastability of the boron-related defect observed in p-type... (Read more)
- 225. Phys. Rev. B 71, 125210 (2005) , “Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO”, L. S. Vlasenko and G. D. WatkinsThe dominant defect observed in the photoluminescence (PL) of room-temperature electron-irradiated ZnO by optical detection of electron paramagnetic resonance (ODEPR) is determined to be the positively charged oxygen vacancy (VO+" align="middle">). Its spectrum, labeled L3,... (Read more)
- 226. Phys. Rev. B 71, 125209 (2005) , “Properties of Ga-interstitial defects in AlxGa1–xNyP1–y”, N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, Sukit Limpijumnong, S. B. Zhang, Y. G. Hong, H. P. Xin, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. YonezuA detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of... (Read more)
- 227. Phys. Rev. B 71, 115213 (2005) , “Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam”, Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. OhdairaZnO crystals were implanted with 2080 keV hydrogen ions up to a total dose of 4.4×1015 cm2. Positron lifetime and Doppler broadening of annihilation radiation measurements show introduction of zinc vacancy-related defects after implantation. These vacancies... (Read more)
- 228. Phys. Rev. B 71, 075421 (2005) , “N-type electric conductivity of nitrogen-doped ultrananocrystalline diamond films”, Ying Dai, Dadi Dai, Cuixia Yan, Baibiao Huang, and Shenghao HanThe electronic structures of several possible nitrogen-related centers on the diamond surface and in the diamond grain-boundary have been studied using density functional theory approaches with cluster models. The results indicate that the nitrogen-vacancy related complex may be the shallow donor... (Read more)
- 229. Phys. Rev. B 71, 035205 (2005) , “Dominant hydrogen-oxygen complex in hydrothermally grown ZnO”, E. V. Lavrov, F. Börrnert, and J. WeberA hydrogen-related defect labeled as H-I*, observed in as-grown hydrothermal ZnO, is studied by means of infrared absorption spectroscopy. The defect possesses a stretch local vibrational mode at 3577.3 cm1 that is associated with a single hydrogen atom bound to oxygen with the O-H... (Read more)
- 230. Phys. Rev. Lett. 95, 225502 (2005) , “Evidence for Native-Defect Donors in n-Type ZnO”, D. C. Look, G. C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, S. B. Zhang, and K. NordlundRecent theory has found that native defects such as the O vacancy VO and Zn interstitial ZnI have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory... (Read more)
- 231. Phys. Rev. Lett. 95, 105502 (2005) , “Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond”, M. J. Shaw, P. R. Briddon, J. P. Goss, M. J. Rayson, A. Kerridge, A. H. Harker, and A. M. StonehamOur ab initio calculations of the hyperfine parameters for negatively charged vacancy-hydrogen and nitrogen-vacancy-hydrogen complexes in diamond compare static defect models and models which account for the quantum tunneling behavior of hydrogen. The static models give rise to hyperfine... (Read more)
- 232. Phys. Rev. Lett. 94, 186101 (2005) , “Geometric Characterization of a Singly Charged Oxygen Vacancy on a Single-Crystalline MgO(001) Film by Electron Paramagnetic Resonance Spectroscopy”, Martin Sterrer, Esther Fischbach, Thomas Risse, and Hans-Joachim FreundElectron paramagnetic resonance spectra of singly charged surface oxygen vacancies (F or color centers) formed by electron bombardment on a single-crystalline MgO film under UHV conditions are reported. The embedding of the defect in a well-defined geometrical environment allows not only for... (Read more)
- 233. Phys. Rev. Lett. 94, 165501 (2005) , “Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy”, M. Rummukainen, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, and H.-J. L. GossmannPositron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 12 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the... (Read more)
- 234. Phys. Rev. Lett. 94, 125501 (2005) , “Delocalized Nature of the Edelta[prime]" align="middle"> Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of Edelta[prime]" align="middle"> point defect induced by γ-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR... (Read more)
- 235. Phys. Rev. Lett. 94, 097602 (2005) , “Shallow Donors in Semiconductor Nanoparticles: Limit of the Effective Mass Approximation”, Serguei B. Orlinskii, Jan Schmidt, Edgar J. J. Groenen, Pavel G. Baranov, Celso de Mello Donegá, and Andries MeijerinkThe spatial distribution of the electronic wave function of a shallow, interstitial Li donor in a ZnO semiconductor nanocrystal has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by electron nuclear double resonance... (Read more)
- 236. Appl. Phys. Lett. 85, 943-945 (2004) , “Paramagnetic defects of silicon nanowires”, A. Baumer, M. Stutzmann, and M. S. BrandtThe paramagnetic defects in and on Si nanowires (SiNWs) obtained by oxide-assisted growth were studied by conventional electron spin resonance spectroscopy. For the as-grown nanowires, three different defects were found: Dangling bonds or Pb-centers with g = 2.0065, located... (Read more)
- 237. Appl. Phys. Lett. 85, 4902-4904 (2004) , “Anomalous energetics and defect-assisted diffusion of Ga in silicon”, Claudio Melis, Giorgia M. Lopez, and Vincenzo FiorentiniWe study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast to B and In, the favored Ga/self-interstitial complex is the tetrahedral interstitial GaT. Thus in the presence of self-interstitials Ga becomes interstitial, and is... (Read more)
- 238. Appl. Phys. Lett. 85, 4633-4635 (2004) , “Electrical and optical properties of rod-like defects in silicon”, J. P. Goss and P. R. BriddonSelf-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more... (Read more)
- 239. Appl. Phys. Lett. 85, 384-386 (2004) , “Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide”, C. C. Ling, M. K. Lui, S. K. Ma, X. D. Chen, S. Fung, and C. D. BelingAcceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at EV + 34 meV is found... (Read more)
- 240. Appl. Phys. Lett. 85, 2827-2829 (2004) , “Formation of Ga interstitials in (Al,In)yGa1–yNxP1–x alloys and their role in carrier recombination”, N. Q. Thinh, I. P. Vorona, M. Izadifard, I. A. Buyanova, and W. M. ChenFormation of complex defects involving a Ga interstitial (Gai) in (Al,In)yGa1yNxP1x alloys and their effects on optical quality are studied by photoluminescence (PL) and optically detected magnetic... (Read more)
- 241. Appl. Phys. Lett. 84, 720-722 (2004) , “Isolated nickel impurities in diamond: A microscopic model for the electrically active centers”, R. Larico, L. V. C. Assali, and W. V. M. MachadoWe present a theoretical investigation on the structural and electronic properties of isolated nickel impurities in diamond. The atomic structures, symmetries, formation and transition energies, and hyperfine parameters of isolated interstitial and substitutional Ni were computed using ab... (Read more)
- 242. Appl. Phys. Lett. 84, 4887-4889 (2004) , “Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry”, M. Rummukainen, J. Oila, A. Laakso, and K. SaarinenPositron annihilation spectroscopy is used to study vacancy defects in GaN grown by molecular-beam epitaxy due to different polar directions and varying stoichiometry conditions during oxygen doping. We show that Ga-polar material is free of compensating Ga vacancies up to [O] = 1018 ... (Read more)
- 243. Appl. Phys. Lett. 84, 4574-4576 (2004) , “Paramagnetic NO2 centers in thin γ-irradiated HfO2 layers on (100)Si revealed by electron spin resonance”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) analysis reveals the incorporation of N in (100)Si/HfO2 structures with ultrathin amorphous HfO2 films deposited by chemical vapor deposition (CVD) using Hf(NO3)4 as precursor, through detection, after 60Co... (Read more)
- 244. Appl. Phys. Lett. 84, 4514-4516 (2004) , “Doping-level-dependent optical properties of GaN:Mn”, O. Gelhausen, E. Malguth, and M. R. PhillipsThe optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (523×1019 cm3) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption peak at... (Read more)
- 245. Appl. Phys. Lett. 84, 3894-3896 (2004) , “H-related defect complexes in HfO2: A model for positive fixed charge defects”, Joongoo Kang, E.-C. Lee, and K. J. ChangBased on first-principles theoretical calculations, we investigate the hydrogenation effect on the defect properties of oxygen vacancies (VO) in HfO2. A defect complex of VO and H behaves as a shallow donor for a wide range of Fermi levels, with a... (Read more)
- 246. Appl. Phys. Lett. 84, 3876-3878 (2004) , “Observation of a Be-correlated donor state in GaN”, F. Albrecht, U. Reislöhner, G. Pasold, C. Hülsen, and W. WitthuhnA Be-related donor level was identified in the band gap of GaN. Thermal admittance spectroscopy (TAS) was combined with the radiotracer principle by applying the radioactive isotope 7Be which was implanted into n-type and p-type GaN. TAS spectra of n-type GaN... (Read more)
- 247. Appl. Phys. Lett. 84, 374-376 (2004) , “Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition”, A. Armstrong and A. R. ArehartThe effect of excess C incorporation on the deep level spectrum of n-type GaN grown by metalorganic chemical vapor deposition was investigated. Low-pressure (LP) growth conditions were used to intentionally incorporate excess C compared to atmospheric pressure (AP) growth conditions. GaN... (Read more)
- 248. Appl. Phys. Lett. 84, 3486-3488 (2004) , “Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire”, S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, and Y. L. WangOptical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50 keV Ga+ focused ion beam in the fluence range of 1×10142×1016 ions cm2 is used for the irradiation... (Read more)
- 249. Appl. Phys. Lett. 84, 3064-3066 (2004) , “Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC”, F. Schmid and G. PenslThe annealing behavior of P+ and N+ ions implanted into p-type 4H-SiC epilayers is studied by a temperature-dependent Hall-effect. Detailed investigations reveal that the electrical activation of implanted P+ ions is governed by the site competition effect,... (Read more)
- 250. Appl. Phys. Lett. 84, 3049-3051 (2004) , “Determination of the ionization energy of nitrogen acceptors in zinc oxide using photoluminescence spectroscopy”, Lijun Wang and N. C. GilesPhotoluminescence spectroscopy of nitrogen-related emissions in ZnO is used to establish the ionization energy of the substitutional nitrogen acceptor. The temperature dependence of the nitrogen-related electron-acceptor (e,A0) emission band has been monitored in as-grown... (Read more)
- 251. Appl. Phys. Lett. 84, 2841-2843 (2004) , “Structure and electrical activity of rare-earth dopants in GaN”, J.-S. Filhol and R. JonesDensity functional theory is used to investigate Eu, Er, and Tm rare earth (RE) impurities in GaN, paying particular attention to their structure, energetics, and electronic properties. The most stable site is when the RE is located at a Ga substitutional site but none of the defects possess deep... (Read more)
- 252. Appl. Phys. Lett. 84, 2760-2762 (2004) , “Activation mechanism of annealed Mg-doped GaN in air”, Yow-Jon LinIn this study, the activation mechanism of annealed Mg-doped GaN in air and the influence of ambient on activation of Mg-doped GaN were investigated. According to the experimental results, we found that the dissociation of MgGaH, and the formation of hydrogenated gallium vacancies... (Read more)
- 253. Appl. Phys. Lett. 84, 2349-2351 (2004) , “Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes”, Mariko Suzuki, Hiroaki Yoshida, Naoshi Sakuma, Tomio Ono, and Tadashi SakaiTemperature-dependent currentvoltage (IV), capacitancevoltage (CV) measurements, and frequency-dependent CV measurements have been carried out to investigate electrical properties of phosphorus (P)-doped n-type... (Read more)
- 254. Appl. Phys. Lett. 84, 2277-2279 (2004) , “Passivation of Mn acceptors in GaMnAs”, M. S. Brandt, S. T. B. Goennenwein, T. A. Wassner, F. Kohl, A. Lehner, H. Huebl, T. Graf, and M. StutzmannThe effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (1021 cm3) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to... (Read more)
- 255. Appl. Phys. Lett. 84, 2106-2108 (2004) , “Room-temperature silicon light-emitting diodes based on dislocation luminescence”, V. Kveder, M. Badylevich, E. Steinman, and A. IzotovWe demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity... (Read more)
- 256. Appl. Phys. Lett. 84, 2055-2057 (2004) , “Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions”, B. J. Pawlak and R. SurdeanuWe investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and characterization by sheet resistance, secondary-ion mass spectrometry, and spreading-resistance measurement are used to extract detailed... (Read more)
- 257. Appl. Phys. Lett. 84, 197-199 (2004) , “Narrow, deep level cathodoluminescence emission from semi-insulating GaAs”, J. K. RadhakrishnanCathodoluminescence investigations on bulk undoped semi-insulating GaAs samples taken from different sources reveal the presence of a deep level emission at 0.9 eV at 77 K, with a narrow full width at half maximum of 8 meV. The temperature-dependent and beam-parameter-dependent studies indicate... (Read more)
- 258. Appl. Phys. Lett. 84, 1895-1897 (2004) , “Mechanism of p-type-to-n-type conductivity conversion in boron-doped diamond”, Ying DaiWe report on the role of two boronhydrogen complexes in the conductivity conversion from p-type to n-type in boron-doped diamond samples. The calculated electronic structures of the simulated clusters show that the boronhydrogen complex of hydrogenboron pairs... (Read more)
- 259. Appl. Phys. Lett. 84, 1889-1891 (2004) , “"Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers”, A. Kvit, A. Karoui, G. Duscher, and G. A. RozgonyiNitrogen effect on nucleation of oxygen precipitates in Czochralski Si has been investigated by transmission electron microscopy, Z-contrast imaging, and electron energy loss spectrometry (EELS). We have examined unusual "umbrella" shape oxygen precipitates in bulk of ingot in... (Read more)
- 260. Appl. Phys. Lett. 84, 1862-1864 (2004) , “Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si”, G. Impellizzeri, J. H. R. dos Santos, S. Mirabella, and F. PrioloWe have explained the role of fluorine in the reduction of the self-interstitial population in a preamorphized Si layer under thermal treatment. For this purpose, we have employed a B spike layer grown by molecular-beam epitaxy as a marker for the self-interstitial local concentration. The... (Read more)
- 261. Appl. Phys. Lett. 84, 1859-1861 (2004) , “Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy”, M. Ramsteiner, D. S. Jiang, J. S. Harris, and K. H. PloogNitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E+ transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate... (Read more)
- 262. Appl. Phys. Lett. 84, 1713-1715 (2004) , “EL2-related metastable defects in semi-insulating GaAs”, D. KabirajThermally stimulated current spectroscopy, photoquenching, and photorecovery have been used to reveal the EL2-related metastable defect levels in semi-insulating GaAs. It has been found that one set of metastable levels is directly related to EL2 and the other set is indirectly related to EL2 defect... (Read more)
- 263. Appl. Phys. Lett. 84, 1698-1700 (2004) , “Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen”, Suku Kim, B. S. Kang, and F. RenPt/ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5 V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H2 is introduced into a N2 ambient at 25 °C. The rectifying currentvoltage... (Read more)
- 264. Appl. Phys. Lett. 84, 1683-1685 (2004) , “Optically active erbium–oxygen complexes in GaAs”, J. CoutinhoDensity functional modeling of Er and ErO complexes in GaAs show that Er impurities at the Ga site are not efficient channels for exciton recombination, but decorative O atoms play crucial roles in inhibiting Er precipitation and in creating the necessary conditions for electron-hole capture.... (Read more)
- 265. Appl. Phys. Lett. 84, 1576-1578 (2004) , “Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes”, S. Maximenko, S. Soloviev, D. Cherednichenko, and T. SudarshanThe electron-beam-induced current (EBIC) method was employed to investigate the electrical activity of dislocations in silicon carbide Schottky and diffused pn diodes. Dislocations in Schottky diodes appear as dark spots with the EBIC current signal at the dislocations reduced... (Read more)
- 266. Appl. Phys. Lett. 84, 1492-1494 (2004) , “Comparative study of defect energetics in HfO2 and SiO2”, W. L. Scopel, Antônio J. R. da Silva, W. Orellana, and A. FazzioWe perform ab initio calculations, based on density functional theory, for substitutional and vacancy defects in the monoclinic hafnium oxide (m-HfO2) and α-quartz (SiO2). The neutral oxygen vacancies and substitutional Si and Hf defects in HfO2... (Read more)
- 267. J. Appl. Phys. 96, 747 (2004) , “Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy”, Sung-Yong Chung, Niu Jin, Ryan E. Pavlovicz, and Paul R. BergerDeep-level transient spectroscopy (DLTS) measurements were performed in order to investigate the effects of post-growth heat treatment on deep level defects in Si layers grown by low-temperature molecular-beam epitaxy (LT-MBE) at 320 °C. In the LT-MBE as-grown samples, two dominant... (Read more)
- 268. J. Appl. Phys. 96, 6789 (2004) , “The role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes”, Koji KatayamaThe role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes under operation was investigated. The generation rate of microscopic dark spots, which do not correspond to the original stacking faults or threading dislocations in the epilayer, was found to... (Read more)
- 269. J. Appl. Phys. 96, 530 (2004) , “Properties of arsenic antisite defects in Ga1–xMnxAs”, A. Wolos and M. KaminskaWe report the results of optical absorption measurements on Ga1xMnxAs layers grown by low-temperature molecular beam epitaxy. In the paramagnetic layers grown at very low temperatures (below 250 °C) the experiments reveal an absorption band at 1.2 eV... (Read more)
- 270. J. Appl. Phys. 96, 4960 (2004) , “Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions”, I. O. UsovThe diffusion behavior of boron (B) and nitrogen (N) implanted in 6H and 4H silicon carbide (SiC) samples was investigated using secondary ion mass spectroscopy. The samples were either coimplanted with B and N ions or implanted with each element alone. The annealing was performed at 1700 °C... (Read more)
- 271. J. Appl. Phys. 96, 4909 (2004) , “Deep levels created by low energy electron irradiation in 4H-SiC”, L. Storasta, J. P. Bergman, E. Janzén, and A. HenryWith low energy electron irradiation in the 80250 keV range, we were able to create only those intrinsic defects related to the initial displacements of carbon atoms in the silicon carbide lattice. Radiation induced majority and minority carrier traps were analyzed using capacitance transient... (Read more)
- 272. J. Appl. Phys. 96, 3687 (2004) , “Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon”, Daniel MacdonaldThe impact of residual recombination centers after low-energy self-implantation of crystalline silicon wafers and annealing at 900 °C has been determined by bulk carrier lifetime measurements as a function of implant dose. Doses below 1013 cm2 resulted in no... (Read more)
- 273. J. Appl. Phys. 96, 320 (2004) , “Passivation of double-positioning twin boundaries in CdTe”, Yanfa Yan, M. M. Al-Jassim, and K. M. JonesWe present density-functional total-energy calculations to investigate the passivation effects of impurity elements such as Br, Cl, S, O, H, and Na on double-positioning twin boundaries in CdTe. We find that Br, Cl, S, and O atoms present passivation effects on the boundaries with different degrees,... (Read more)
- 274. J. Appl. Phys. 96, 1563 (2004) , “Electrical properties of GaSe doped with Er”, Yu-Kuei Hsu and Chen-Shiung ChangMeasurements of the Hall effect and Er-related luminescence were made on Er-doped GaSe. Deep-level transient spectroscopy (DLTS) was also performed. Hall measurements show that hole concentrations of 0.2%, 0.5%, and 1% Er-doped GaSe samples are 1.5×10176×1017... (Read more)
- 275. J. Appl. Phys. 96, 1341 (2004) , “Assignment of deep levels causing yellow luminescence in GaN”, C. B. Soh, S. J. Chua, and H. F. LimThe deep levels in GaN associated with yellow luminescence transitions have been investigated using photoluminescence, Hall measurements, and deep level transient spectroscopy (DLTS). Hall measurements on Si-doped GaN show the presence of donor levels at ~18, ~35, and ~70 meV, which are respectively... (Read more)
- 276. J. Appl. Phys. 95, 913 (2004) , “Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam”, A. UedonoPositron annihilation was used to probe vacancy-type defects in electroplated Cu films. Doppler broadening spectra of the annihilation radiation for Cu films deposited on samples with a Ta(20 nm)/SiO2(100 nm)/Si structure were measured with a monoenergetic positron beam. For an... (Read more)
- 277. J. Appl. Phys. 95, 8469 (2004) , “Self-diffusion of 12C and 13C in intrinsic 4H–SiC”, M. K. Linnarsson and M. S. JansonSelf-diffusion of carbon (12C and 13C) in low-doped (intrinsic) 4HSiC has been studied using secondary ion mass spectrometry. A two layer 13C enriched structure with 13C/12C ratios of 0.01 and 0.1, respectively, have been prepared by... (Read more)
- 278. J. Appl. Phys. 95, 8092 (2004) , “Determination of functional center local environment in copper-modified Pb[Zr0.54Ti0.46]O3 ceramics”, Rüdiger-A. EichelFerroelectric copper(II)-modified polycrystalline Pb[Zr0.54Ti0.46]O3 ceramics with a dopant concentration of 0.25 mol % were investigated by means of electron paramagnetic resonance and hyperfine sublevel correlation spectroscopy. Special emphasis was put on the... (Read more)
- 279. J. Appl. Phys. 95, 69 (2004) , “Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes”, Souvick Mitra and Mulpuri V. RaoPlanar n+p and p+n junction diodes, fabricated in 4H-SiC epitaxial layers using a double-implantation technology (a deep-range acceptor followed by a shallow-range donor implantation and vice versa), are characterized using capacitance... (Read more)
- 280. J. Appl. Phys. 95, 6092 (2004) , “Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation”, D. Nobili, S. Solmi, and M. FerriCarrier density and mobility measurements were performed on heavily arsenic-doped silicon-on-insulator specimens after 2 MeV implantation of Si+ ions. It is found that implantation induces a marked reduction of the electron density, which increases with the concentration of active dopant,... (Read more)
- 281. J. Appl. Phys. 95, 57 (2004) , “Vacancy-related defect distributions in 11B-, 14N-, and 27Al-implanted 4H–SiC: Role of channeling”, M. S. JansonThe defect distributions in 11B-, 14N-, and 27Al-implanted epitaxial 4HSiC are studied using monoenergetic positron beams. At least three types of defects are needed to account for the Doppler broadening annihilation spectra and two of the defects are... (Read more)
- 282. J. Appl. Phys. 95, 4752 (2004) , “Electrically active defects induced by sputtering deposition on silicon: The role of hydrogen”, F. Volpi and A. R. PeakerWe present a study of the electrically active defects produced in p-type silicon crystals underneath a titanium layer deposited by sputtering to form a Schottky contact. The defects were investigated by Deep Level Transient Spectroscopy and free carrier profiles were determined by... (Read more)
- 283. J. Appl. Phys. 95, 4728 (2004) , “Electrically active defects in irradiated 4H-SiC”, M. L. David4H-SiC epilayers were irradiated with either protons or electrons and electrically active defects were studied by means of deep level transient spectroscopy. Motion of defects has been found to occur at temperature as low as 350400 K. Indeed, the application of an electric field has been found... (Read more)
- 284. J. Appl. Phys. 95, 4655 (2004) , “Hydrogen behavior in SiO2 with high density of defects and locally concentrated silicon”, M. Ikeda, M. Nakagawa, R. Mitsusue, S. Kondo, and N. ImanishiUsing ion implantation techniques, we have studied the trapping, detrapping, and diffusion of H in SiO2 containing a high density of defects and a high concentration of excess Si. In SiO2 sample implanted with Si and H, the implanted H moves toward the surface after stopping at... (Read more)
- 285. J. Appl. Phys. 95, 3404 (2004) , “Identification of vacancy–oxygen complexes in oxygen-implanted silicon probed with slow positrons”, M. Fujinami, T. Miyagoe, and T. SawadaDefects and their annealing behavior for low (2×1015/cm2) and high (1.7×1018/cm2) doses of 180 keV oxygen-implanted silicon have been investigated by the coincidence Doppler broadening (CDB) and lifetime measurements in variable-energy positron... (Read more)
- 286. J. Appl. Phys. 95, 3385 (2004) , “Optical investigations on the annealing behavior of gallium- and nitrogen-implanted ZnO”, F. ReussGallium and nitrogen ions have been implanted into ZnO crystals and metal organic vapor phase epitaxy grown ZnO layers. Postimplantation annealing behavior in the temperature range between 200 and 900 °C has been studied by means of Raman scattering and low-temperature photoluminescence. The... (Read more)
- 287. J. Appl. Phys. 95, 2532 (2004) , “Electrical resistivity of acceptor carbon in GaAs”, A. Ferreira da Silva and I. PepeThe electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm3. Good agreement was obtained between the measured... (Read more)
- 288. Phys .Rev. Lett. 92, 178302 (2004) , “Nonvolatile Memory with Multilevel Switching: A Basic Model”, M. J. Rozenberg, I. H. Inoue, and M. J. SánchezThere is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the... (Read more)
- 289. Phys. Rev. B 70, 235208 (2004) , “Interstitial nitrogen and its complexes in diamond”, J. P. Goss, P. R. Briddon, S. Papagiannidis, and R. JonesNitrogen, a common impurity in diamond, can be displaced into an interstitial location by irradiation. The resultant interstitial defects are believed to be responsible for a range of infrared and electronic transitions that vary in thermal stability, and on the type of diamond. Of particular... (Read more)
- 290. Phys. Rev. B 70, 205214 (2004) , “Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique”, W. Ulrici and B. ClerjaudIn LEC-grown GaAs:S, two vibrational absorption lines are measured at 2382.2 and 2392.8 cm1 (T = 7 K) and assigned to 11B-H and 10B-H stretching modes. Uniaxial stress experiments reveal that the symmetry of the responsible complex is... (Read more)
- 291. Phys. Rev. B 70, 205211 (2004) , “Ni-vacancy defect in diamond detected by electron spin resonance”, K. IakoubovskiiTrigonal S = 1 NOL1/NIRIM5 center has been characterized by electron spin resonance (ESR) in nickel and boron doped diamond grown by the high-pressure high-temperature technique. Hyperfine interaction structure has been detected and attributed to six equivalent carbon sites and one Ni site.... (Read more)
- 292. Phys. Rev. B 70, 205203 (2004) , “Properties and formation mechanism of tetrainterstitial agglomerates in hydrogen-doped silicon”, Teimuraz Mchedlidze and Masashi SuesawaFor the tetrainterstitial agglomerate (I4), four additional silicon (Si) atoms are incorporated in an ordinary unit cell of Si lattice in such a manner that all atoms are four-coordinated and angles between bonds are not disturbed significantly. Microstructure, electrical... (Read more)
- 293. Phys. Rev. B 70, 205201 (2004) , “Interaction of hydrogen with boron, phosphorus, and sulfur in diamond”, E. B. Lombardi, Alison Mainwood, and K. OsuchThe production of n-type doped diamond has proved very difficult. Phosphorus, and possibly sulfur, when in substitutional sites in the lattice, forms a donor which could be used in electronic devices. Boron, which is a relatively shallow acceptor, can be passivated by hydrogen, and it is... (Read more)
- 294. Phys. Rev. B 70, 144111 (2004) , “Identification of Cr3+ centers in Cs2NaAlF6 and Cs2NaGaF6 crystals by EPR and ENDOR paramagnetic resonance techniques”, H. Vrielinck, F. Loncke, F. Callens, P. Matthys, and N. M. KhaidukovChromium-doped Cs2NaAlF6 and Cs2NaGaF6 crystals have been investigated by using the techniques of electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) at X-band (9.5 GHz) and Q-band (34 GHz) frequencies. In both... (Read more)
- 295. Phys. Rev. B 70, 121201(R) (2004) , “Identification of Ga-interstitial defects in GaNyP1–y and AlxGa1–xNyP1–y”, N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, Sukit Limpijumnong, S. B. Zhang, Y. G. Hong, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. YonezuTwo Ga-interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1y and... (Read more)
- 296. Phys. Rev. B 70, 115210 (2004) , “Possible p-type doping with group-I elements in ZnO”, Eun-Cheol Lee and K. J. ChangBased on first-principles calculations, we suggest a method for fabricating p-type ZnO with group-I elements such as Li and Na. With group-I dopants alone, substitutional acceptors are mostly self-compensated by interstitial donors. In ZnO codoped with H impurities, the formation of... (Read more)
- 297. Phys. Rev. B 70, 115206 (2004) , “Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO”, G. N. Aliev, S. J. Bingham, D. Wolverson, J. J. Davies, H. Makino, H. J. Ko, and T. YaoOptically detected magnetic resonance (ODMR) experiments on epitaxial nitrogen-doped ZnO show spectra due to (i) a shallow donor with the full wurtzite symmetry, (ii) a previously unobserved spin-1/2 center of axial symmetry whose principal axis is tilted slightly away from the crystal c... (Read more)
- 298. Phys. Rev. B 70, 035203 (2004) , “High-resolution local vibrational mode spectroscopy and electron paramagnetic resonance study of the oxygen-vacancy complex in irradiated germanium”, P. Vanmeerbeek, P. Clauws, H. Vrielinck, B. Pajot, L. Van Hoorebeke, and A. Nylandsted LarsenIt was recently discovered that in electron-irradiated germanium doped with oxygen a local vibrational mode occurs at 669 cm1 that could be ascribed to the negatively charged oxygen-vacancy complex (VO). In the 669 cm1 band and in another... (Read more)
- 299. Phys. Rev. B 70, 033204 (2004) , “Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon”, Eisuke Abe, Kohei M. Itoh, Junichi Isoya, and Satoshi YamasakiWe report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29Si and natural abundance Si (natSi) single crystals measured at 8 K. The two-pulse echo decay curves for both samples show... (Read more)
- 300. Phys. Rev. B 70, 024105 (2004) , “X- and Q-band ENDOR study of the Fe+(II) center in chlorinated SrCl2:Fe crystals”, D. Ghica, S. V. Nistor, H. Vrielinck, F. Callens, and D. SchoemakerThe 001 axially symmetric Fe+(II) center observed in SrCl2:Fe2+ crystals has been studied by the electron nuclear double resonance (ENDOR) technique in the microwave X and Q bands. This center is produced only in crystals grown in chlorine atmosphere... (Read more)
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