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- 1. Jpn. J. Appl. Phys. 49, 071302 (2010) , “Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper”, Minoru Nakamura and Susumu MurakamiWe have observed the formation of the Cu centers in p-type Si crystals diffused with dilute Cu between 400 and 1000 °C by deep-level transient spectroscopy (DLTS) and photoluminescence methods. For the samples diffused below 800 °C, a DLTS Cu center denoted as the CuDLB center was... (Read more)
- 2. Jpn. J. Appl. Phys. 49, 05FE02 (2010) , “Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers”, Kiyoteru Kobayashi and Taketoshi IdeThe current conduction in silicon carbon nitride (SiCN) dielectric films subjected to ultraviolet (UV) illumination at room temperature has been investigated. After exposure of SiCN single-layer and SiCN–SiO2 double-layer films to 4.9-eV UV illumination, leakage currents through... (Read more)
- 3. Jpn. J. Appl. Phys. 49, 051001 (2010) , “Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination center. The level is found to be responsible for the reverse bias current in the depletion region of n-type GaAsN schottky... (Read more)
- 4. Appl. Phys. Express 3, 051002 (2010) , “Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient spectroscopy and nitrogen concentration dependence of its density. It has a high capture cross section and not observed in N... (Read more)
- 5. Appl. Phys. Express 3, 031103 (2010) , “High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates”, Seunghwan Park, Tsutomu Minegishi, Dongcheol Oh, Hyunjae Lee, Toshinori Taishi, Jinsub Park, Mina Jung, Jiho Chang, Inho Im, Junseok Ha, Soonku Hong, Ichiro Yonenaga, Toyohiro Chikyow, and Takafumi YaoThis article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4×1016 cm-3, while ZnO:N shows n-type... (Read more)
- 6. Solid State Commun. 7, ii-iii (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system... (Read more)
- 7. Phys.Rev.Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”,he electron paramagnetic resonance spectrum of float-zone silicon recorded after implantation with protons contains a strongly temperature dependent signal from a vacancy-type defect. The signal displays monoclinic-I symmetry below 65 K and trigonal symmetry above 100 K. This symmetry change, together with a hyperfine splitting from a single proton, allows an unequivocal identification with VH0, the neutral charge state of a vacancy containing a single hydrogen atom. The striking similarity between the properties of VH0 and VP0 (the E center) corroborate our identification.
- 8. Physica B 170, 155 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V.Gorelkinskii, N.N.NevinnyiA review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 ± 0.04 eV with a second-order pre-exponential factor, K0 = (1.25 ± 2.5) × 10-7 cm3/s. A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.
- 9. Solid State Commun. 61, 199 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun and Qin Guo-gangA new defect, labled as Si-PK1, has been observed with EPR (Electron Paramagnetic Resonance) in neutron irradiated FZ-Si grown in argon, hydrogen and vacuum. Its symmetry has been determined to be triclinic symmetry, the lowest possible symmetry. Si-PK1 has not been observed in CZ-Si. It is not related to any common impurities in Si, like oxygen, carbon, phosphorus and boron, and it should be an intrinsic defect. Combining with the empirical classification of g tensor, it is concluded that Si-PK1 may be a multi-vacancy cluster.
- 10. Jpn. J. Appl. Phys. 46, L57 (2007) , “Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching”, Hisashi Shima, Fumiyoshi Takano, Yukio Tamai, Hiro Akinaga, and Isao H. Inoue.The resistance switching in Pt/Co–O/Pt trilayers has been successfully demonstrated. The trilayers were prepared by radio-frequency magnetron sputtering. The partial pressure of oxygen during sputtering and the post thermal process for the trilayer are crucial to realize the reproducible resistance switching. By adjusting oxygen partial pressure as well as post-annealing temperature and time, large resistance switching was steadily obtainable in both the as deposited and post-annealed Pt/Co–O/Pt trilayers. The resistance switching ratio exceeds 103, being sufficiently large for the resistance random access memory (RRAM). Co–O is regarded as a very promising oxide for RRAM having compatibilities with the conventional complementary metal–oxide semiconductor process. (Read more)
- 11. Jpn. J. Appl. Phys. 45, L991 (2006) , “Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides”, Kentaro Kinoshita, Tetsuro Tamura, Masaki Aoki, Yoshihiro Sugiyama and Hitoshi TanakaBoth lowering the “reset” current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. These requirements have been satisfied by using a hetero junction structure consisting of transition metal oxides, NiOy/TiOx/Pt, combining direct contact with the NiOy using a W-probe. It is considered that this configuration brought about extreme downsizing of the effective area of both the top and bottom electrodes for NiOy and thus decreased the number of filaments formed in “forming” process. Reducing the number of filaments is essential to these issues. (Read more)
- 12. Solid State Commun. 132, 333 (2004) , Pergamon Press , “Phase transitions investigation in ZnTe by thermoelectric power measurements at high pressure”, S.V. Ovsyannikov, V.V. ShchennikovThe pressure-induced phase transitions were studied in ZnTe by the thermoelectric power (S) technique. For the high-pressure trigonal phase P3121 cinnabar the large thermopower values S≈+400 correspond to semiconductor hole conductivity. During a transition into the orthorhombic structure Cmcm the value of S dropped by 40–50 times indicating metallic hole conductivity, like in the high pressure phases of other chalcogenides of II Group (HgSe, HgTe, CdTe) with Cmcm structure. In a transient region between the trigonal and orthorhombic phase (especially under decreasing pressure) a novel phase has been observed with a negative value of S. By analogy with other Zn and Cd chalcogenides whose NaCl phases have an electron type of conductivity the phase observed may have a NaCl structure. (Read more)
- 13. Solid State Commun. 126, 373 (2003) , Pergamon Press , “Thermoelectric power, magnetoresistance of lead chalcogenides in the region of phase transitions under pressure”, V.V. Shchennikov, S.V. OvsyannikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (N–E) effects were measured at ultrahigh pressure up to 20 GPa under closure of semiconductor gap at NaCl- and GeS-type phases of n-PbTe, p-PbSe and p-PbS. Near~3 GPa, the maxima of N–E effects and magnetoresistance (and hence of mobility of charge carriers) attributed to gapless state for PbTe and PbSe were established. The reversible sign inversion of transverse N–E effect indicating the change in scattering mechanism of charge carries have been revealed at high pressure phase of PbSe. The lowering of thermomagnetic effects with pressure gave the evidence of indirect semiconductor gap at high pressure GeS-type phases in contrary to NaCl-phases. (Read more)
- 14. Physica B 376-377, 177 (2006) , Elsevier , “Micro-characterisation of Si wafers by high-pressure thermopower technique”, S.V. Ovsyannikov, V.V. Shchennikov Jr, N.A. Shaydarova, V. V. Shchennikov, A. Misiuk, D. Yang, I.V. Antonova, S.N. ShaminIn the present work a set of Czochralski-grown silicon wafers (Cz–Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region (0-20GPa). The shifts were observed in pressure of semiconductor–metal phase transition Pt determined from the S(P) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen cO (which is always present in Cz–Si) on the other hand. The dependence exhibited a maximum of Pt near cO~9×1017cm-3. (Read more)
- 15. Physica B 344, 190 (2004) , Elsevier , “Thermomagnetic and thermoelectric properties of semiconductors (PbTe, PbSe) at ultrahigh pressures”, S.V. Ovsyannikov, V.V. ShchennikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (LNE, TNE) effects and the Maggi–Reghi–Leduc (MRL) effect were measured on PbTe and PbSe micro-samples at ultrahigh pressures upto 20 GPa. Values of the mobility of charge carriers as well as the scattering parameter were estimated both for the low- and high-pressure phase of PbTe and PbSe. At about 3 GPa, the maxima of both Nernst–Ettingshausen effects and magnetoresistance (MR) (and hence of the mobility of charge carriers μ), attributed to the gapless state of PbTe and PbSe were established. The TNE effect was found to be the largest among the effects measured, while the MRL was hardly visible even at the highest mobility values of the charge carriers. The possibilities for using thermomagnetic effects in micro-device technologies are discussed. (Read more)
- 16. Phys .Rev. Lett. 92, 178302 (2004) , “Nonvolatile Memory with Multilevel Switching: A Basic Model”, M. J. Rozenberg, I. H. Inoue, and M. J. SánchezThere is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the... (Read more)
- 17. Appl. Phys. Express 2, 091101 (2009) , “Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment”, Toru Hiyoshi and Tsunenobu KimotoBy thermal oxidation of 4H-SiC at 1150–1300 °C, the Z1/2 and EH6/7 concentrations can be reduced to below 1×1011 cm-3. By the oxidation, however, a high concentration of HK0 center (EV + 0.78 eV) is generated.... (Read more)
- 18. Jpn. J. Appl. Phys. 48, 081003 (2009) , “Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN”, Kuan-Ting Liu, Shoou-Jinn Chang, and Sean WuThe effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant... (Read more)
- 19. Appl. Phys. Express 2, 041101 (2009) , “Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation”, Toru Hiyoshi and Tsunenobu KimotoSignificant reduction of major deep levels in n-type 4H-SiC(0001) epilayers by means of thermal oxidation is demonstrated. By thermal oxidation of epilayers at 1150–1300 °C, the concentration of the Z1/2 and EH6/7 centers has been reduced from... (Read more)
- 20. Jpn. J. Appl. Phys. 48, 031205 (2009) , “Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide”, Kazuhiro Mochizuki, Haruka Shimizu, and Natsuki YokoyamaReported profiles of high-temperature (500 °C)-implanted boron ions diffused in 4H-silicon carbide at 1200–1900 °C for 5–90 min were simulated through a “dual-sublattice” modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a... (Read more)
- 21. J. Appl. Phys. 105, 053709 (2009) , “Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, David D. Caudel, Pijush Bhattacharya, Arnold Burger, Krishna C. Mandal, D. Johnstone, and S. A. PayneDeep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Three... (Read more)
- 22. Appl. Phys. Lett. 94, 092105 (2009) , “Interaction of oxygen with thermally induced vacancies in Czochralski silicon”, V. Akhmetov, G. Kissinger, and W. von AmmonComplexes consisting of a vacancy and four oxygen atoms, VO4, were found in oxygen-rich Czochralski silicon wafers subjected to rapid thermal annealing (RTA) at 1250 °C for 30 s in Ar/O2 atmosphere by means of Fourier transform infrared spectroscopy with enhanced... (Read more)
- 23. Appl. Phys. Lett. 94, 091903 (2009) , “Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys”, M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence spectroscopy was employed to study the impurity transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was observed in Mg-doped AlxGa1−xN alloys, which was identified to have the same origin as the... (Read more)
- 24. Phys. Rev. B 79, 075203 (2009) , “Hyperfine interaction in the ground state of the negatively charged nitrogen vacancy center in diamond”, S. Felton, A. M. Edmonds, and M. E. NewtonThe 14N, 15N, and 13C hyperfine interactions in the ground state of the negatively charged nitrogen vacancy (NV−) center have been investigated using electron-paramagnetic-resonance spectroscopy. The previously published parameters for the... (Read more)
- 25. Phys. Rev. B 79, 075201 (2009) , “First-principles studies of small arsenic interstitial complexes in crystalline silicon”, Yonghyun Kim, Taras A. Kirichenko, Ning Kong, Graeme Henkelman, and Sanjay K. BanerjeeWe present a first-principles study of the structure and dynamics of small As-interstitial complexes (AsI2, As2I2, AsI3, and As2I3) in crystalline Si. These complexes can be important components of stable As-interstitial clusters or... (Read more)
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