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- 801. J. Appl. Phys. 87, 2910 (2000) , “Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon”, L. S. Robertson and K. S. JonesThe evolution of both {311} defects and dislocation loops in the end-of-range (EOR) damage region in silicon amorphized by ion implantation was studied by ex situ transmission electron microscopy (TEM). The amorphization of a (100) n-type Czochralski wafer was achieved with a 20 keV... (Read more)
- 802. J. Appl. Phys. 87, 2885 (2000) , “Reversible variation of donor concentrations in high-purity InP by thermal treatment”, Eishi KubotaThe donor concentration in high-purity InP bulk crystals was found to be reversibly changed by thermal treatment. At a level of 0.52.0×1015 cm3, the concentration decreased below 340 °C and increased above 380 °C. Far-infrared photoconductivity... (Read more)
- 803. J. Appl. Phys. 87, 2655 (2000) , “Recrystallization and electrical properties of MeV P implanted 6H–SiC”, Shinsuke Harada and Teruaki MotookaWe have investigated structural changes and electrical activation processes in 8 MeV P + ion implanted 6HSiC at room temperature (RT) and 850 °C by means of transmission electron microscopy, secondary ion mass spectrometry, and currentvoltage measurements. A buried... (Read more)
- 804. J. Appl. Phys. 87, 249 (2000) , “Photoionization of deep centers in Al2O3”, Von H. Whitley and S. W. S. McKeeverThe optical threshold energies for photoionization of several different electron traps in Al2O3 have been determined using photoconductivity and optically stimulated luminescence (OSL). Stimulation of the photoconductivity and OSL is observed over a wide range of optical... (Read more)
- 805. J. Appl. Phys. 87, 223 (2000) , “Photocapacitive detection of hole emission from DX center in n-type Al0.3Ga0.7As doped with Te”, Akihiko MuraiPhotocapacitance (PHCAP) measurements are applied to liquid-phase epitaxially grown n- Al0.3Ga0.7As crystals at different temperatures. The PHCAP measurements revealed deep levels optically located at 0.5 eV below the conduction band and 1.5 eV above the valence band... (Read more)
- 806. J. Appl. Phys. 87, 2162 (2000) , “Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation”, Aurangzeb Khan and Masafumi YamaguchiWe have investigated the defect structure of 10 MeV proton irradiated Czochralski-grown Si single crystals and space solar cells with boron-doped p-Si base layer using deep level transient spectroscopy measurements to characterize both vacancy interstitials and their complex-type defects and... (Read more)
- 807. J. Appl. Phys. 87, 2149 (2000) , “Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery”, C. Ronning, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, and H. HofsässThe recovery of structural defects in gallium nitride (GaN) and aluminum nitride (AlN) after implantation of 111In+ and 89Sr+ in the dose range (0.13) 1013 cm2 and ion energies of 60400 keV has been investigated as a... (Read more)
- 808. J. Appl. Phys. 87, 207 (2000) , “Photostimulated luminescence process in the x-ray storage phosphor CsBr:Ga+”, U. RogulisCsBr doped with Ga+ has previously proved to be an efficient X-ray storage phosphor with a figure of merit comparable to that of the commercially used BaFBr:Eu2+. By measuring the magnetic circular dichroism of the optical absorption (MCDA), the MCDA-detected electron... (Read more)
- 809. J. Appl. Phys. 87, 2064 (2000) , “Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition”, Dapeng Xu, Hui Yang, D. G. Zhao, S. F. Li, and R. H. WuThe mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs(100) by metalorganic chemical vapor deposition has been investigated. By examining the dependence of photoluminescence on the excitation intensity (which varied over four orders) at room temperature,... (Read more)
- 810. J. Appl. Phys. 87, 1914 (2000) , “Paramagnetic centers in Al-doped 6H–SiC: Temperature and concentration effects”, Gary J. GerardiThe electron paramagnetic resonance of Al-doped 6HSiC was investigated over a range of temperature and concentration. The resonance signals attributed to Al substituting for Si (AlSi) were found to decrease sharply with temperature between 3.4 and 6.0 K. Impurity-band conduction... (Read more)
- 811. J. Appl. Phys. 87, 1855 (2000) , “Improvement in photoluminescence efficiency of SiO2 films containing Si nanocrystals by P doping: An electron spin resonance study”, Minoru Fujii, Atsushi Mimura, Shinji Hayashi, and Keiichi YamamotoSiO2 and phosphosilicate glass (PSG) films containing Si nanocrystals (nc-Si) as small as a few nanometers were studied by electron spin resonance (ESR) and photoluminescence (PL), and the correlation between the two measurements was examined. It is shown that the incorporation of nc-Si... (Read more)
- 812. J. Appl. Phys. 87, 1681 (2000) , “Annihilation of thermal double donors in silicon”, Yoichi Kamiura, Yoshinori Takeuchi, and Yoshifumi YamashitaWe performed systematic experiments on the annihilation of six species of thermal double donors, or TDDs (TDD1TDD6) under various conditions in both carbon-lean and carbon-rich Si crystals, by means of low-temperature infrared spectroscopy. We found that two kinds of TDD annihilation occurred... (Read more)
- 813. J. Appl. Phys. 87, 1659 (2000) , “Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams”, Akira Uedono and Shoichiro TanigawaThe depth distributions and species of defects in Si on insulator (SOI) fabricated by low-dose oxygen implantation were determined from measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons. The temperature range for the annealing of the defects... (Read more)
- 814. J. Appl. Phys. 87, 1424 (2000) , “Electron paramagnetic resonance study of the Eu2+ ion in a PbWO4 single crystal”, T. H. Yeom, I. G. Kim, and S. H. LeeThe electron paramagnetic resonance of the Eu2+ ion in a PbWO4 single crystal, grown by the Czochralski method, has been investigated using an X-band spectrometer. The rotation patterns in the crystallographic planes together with spin-Hamiltonian parameters of... (Read more)
- 815. J. Appl. Phys. 87, 1187 (2000) , “Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance”, E. San Andrés, A. del Prado, F. L. Martínez, and I. MártilThe effect of rapid thermal annealing processes on the properties of SiO2.0 and SiN1.55 films was studied. The films were deposited at room temperature from N2 and SiH4 gas mixtures, and N2, O2, and SiH4 gas mixtures,... (Read more)
- 816. J. Appl. Phys. 87, 117 (2000) , “Zinc self-diffusion, electrical properties, and defect structure of undoped, single crystal zinc oxide”, Gregory W. TomlinsZinc self-diffusion was measured in single crystal zinc oxide using nonradioactive 70Zn as the tracer isotope and secondary ion mass spectrometry for data collection. Crystal mass was closely monitored to measure ZnO evaporation. Diffusion coefficients were isotropic with an activation... (Read more)
- 817. Phys. Rev. Lett. 85, 417 - 420 (2000) , “Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State of ZnS- in Si”, H. Schroth, K. Laßmann, S. Voß, and H. BrachtElectric-dipole spin resonance of the deep acceptor ZnS- in Si reveals close Γ8 and Γ7 ground states with zero-field separation of only 0.31 meV as compared to the 43 meV of the two valence bands. With Landé's formula for the g factors of a... (Read more)
- 818. Phys. Rev. Lett. 84, 4926 - 4929 (2000) , “Overcoordinated Hydrogens in the Carbon Vacancy: Donor Centers of SiC”, A. Gali, B. Aradi, P. Deák, W. J. Choyke, and N. T. SonEpitaxial silicon carbide is likely to contain hydrogen and vacancies ( V); therefore, V+nH complexes are likely to influence its electronic properties. Using ab initio calculations we show that neutral and positive H atoms are trapped by carbon vacancies ( VC) in three-center bonds with... (Read more)
- 819. Phys. Rev. Lett. 84, 3137 - 3140 (2000) , “Electron-Irradiation-Induced Radiolytic Oxygen Generation and Microsegregation in Silicon Dioxide Polymorphs”, Marion A. StevensThe first direct in situ observations of the production and microsegregation of radiolytic interstitial oxygen resulting from electron beam irradiation of crystal and amorphous oxygen deficient SiO2 polymorphs has been made using cathodoluminescence (CL) microanalysis (spectroscopy and... (Read more)
- 820. Phys. Rev. Lett. 84, 1495 - 1498 (2000) , “Lattice Location and Stability of Ion Implanted Cu in Si”, U. Wahl, A. Vantomme, G. Langouche, J. G. Correia, and ISOLDE CollaborationWe report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of β- particles emitted by the radioactive isotope 67Cu was monitored following room temperature implantation into Si single crystals and annealing up... (Read more)
- 821. Appl. Phys. Lett. 75, 832 (1999) , “Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy”, A. Hierro, D. Kwon, S. H. Goss, L. J. Brillson, and S. A. RingelA midgap deep level in n-type ZnSe grown by molecular beam epitaxy (MBE) on In0.04Ga0.96As/GaAs is detected and investigated by deep level optical spectroscopy and cathodoluminescence spectroscopy. The deep level has an optical threshold energy of 1.46 eV below the... (Read more)
- 822. Appl. Phys. Lett. 75, 811 (1999) , “Production and annealing of electron irradiation damage in ZnO”, D. C. Look, D. C. Reynolds, and J. W. HemskyHigh-energy (> 1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damage is observed for irradiation in the [0001] direction (Zn face) than in the [000] direction (O face). The major annealing stage occurs at about 300325 °C, and is much sharper for defects... (Read more)
- 823. Appl. Phys. Lett. 75, 680 (1999) , “Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction”, Jiro Ushio and Takuya MaruizumiThe determining factor for the accumulation of N at a Si/SiO2 interface during oxynitridation of the interface was investigated using a quantum-chemical method. Both mechanical and chemical factors (the interface strains and the heats of reaction of the oxynitridation) were considered.... (Read more)
- 824. Appl. Phys. Lett. 75, 668 (1999) , “High-resistance buried layers by MeV Fe implantation in n-type InP”, A. Gasparotto and A. CarneraWe performed 2 MeV Fe implantation at a temperature of 200 °C on n-type InP substrates with different background doping concentrations. We studied the activation of Fe atoms as compensating deep acceptors and the electrical properties of the implanted layers. Simulation of the... (Read more)
- 825. Appl. Phys. Lett. 75, 618 (1999) , “Second-harmonic generation in silicon carbide polytypes”, S. Niedermeier, H. Schillinger, R. Sauerbrey, B. Adolph, and F. BechstedtWe report simultaneous measurements and ab initio calculations of the second-order nonlinear coefficients for SiC polytypes. Our measured values for χzzz (χzxx) are 18 (4) pm/V for 4H SiC and 24 (4) pm/V for... (Read more)
- 826. Appl. Phys. Lett. 75, 472 (1999) , “Recrystallization of carbon–aluminum ion coimplanted epitaxial silicon carbide—evidenced by room temperature optical measurements”, Z. C. Feng and S. J. ChuaEffects of carbon (C)-aluminum (Al) coimplantation and annealing of epitaxial n-type 6H polytype silicon carbide (6HSiC) have been studied by Raman scattering, photoluminescence (PL), and optical transmission (OT), measured at room temperature. The amorphization and damage of... (Read more)
- 827. Appl. Phys. Lett. 75, 466 (1999) , “The equivalence of vacancy-type damage in ion-implanted Si seen by positron annihilation spectroscopy”, A. P. KnightsThe response of the Doppler-broadened annihilation linewidth parameter S to ion dose has been measured using a controllable-energy positron beam for n-type FzSi(100) implanted with 120 keV Ge + , 400 keV O + , 200 keV He + , and 450 keV H +... (Read more)
- 828. Appl. Phys. Lett. 75, 4154 (1999) , “Electron effective mass in hexagonal GaN”, A. M. Witowski, K. Pakua, and J. M. BaranowskiFar-infrared magneto-optical investigations of shallow donors in epitaxial GaN layers on sapphire were carried out by means of Fourier transform spectrometry up to 23 T. From the splitting of the donor p states in a magnetic field, the cyclotron effective mass for conduction electrons was... (Read more)
- 829. Appl. Phys. Lett. 75, 4085 (1999) , “Carbon-related defects in proton-irradiated, n-type epitaxial Si1–xGex”, T. P. Leervad Pedersen and A. Nylandsted LarsenCi and CiCs defects, created by proton irradiation of n-type, strain-relaxed, epitaxial Si1xGex of 0.005x0.5, have been studied using deep-level transient spectroscopy (DLTS). The ionization... (Read more)
- 830. Appl. Phys. Lett. 75, 3983 (1999) , “Detection of Cr impurities in GaN by room temperature cathodoluminescence spectroscopy”, M. Toth and M. R. PhillipsTrace levels of Cr impurities in epitaxial GaN grown on sapphire substrates were investigated using cathodoluminescence (CL) spectroscopy. CL emissions characteristic of Cr in an octahedral crystal field were observed from βGa2O3 overlayers produced on GaN by... (Read more)
- 831. Appl. Phys. Lett. 75, 3938 (1999) , “Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon”, T. Höchbauer and M. NastasiWe have studied the depths of hydrogen surface blisters in 100" align="middle"> n-type silicon, which formed after B + H coimplantation and heat treatment. The silicon substrates had three different dopant levels, ranging from 1014 to 1019 cm3. The Si... (Read more)
- 832. Appl. Phys. Lett. 75, 3844 (1999) , “Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon”, L. S. Robertson, M. E. Law, and K. S. JonesAmorphization of a n-type Czochralski wafer was achieved using a series of Si + implants of 30 and 120 keV, each at a dose of 1×1015 cm2. The Si + implants produced a 2400 Å deep amorphous layer, which was then implanted with 4 keV... (Read more)
- 833. Appl. Phys. Lett. 75, 3802 (1999) , “Electrically active defects in surface pre-amorphized Si under rapid thermal anneal and their removal by concurrent titanium silicidation”, D. Z. Chi and S. AshokThe interstitial-type nature of electrically active defects observed in surface pre-amorphized and subsequently annealed p-type Si is established by comparing the thermal evolution of electrically active defects for rapid thermal anneals (RTA) with/without titanium films. Detailed analyses of... (Read more)
- 834. Appl. Phys. Lett. 75, 3659 (1999) , “Transient enhanced diffusion after laser thermal processing of ion implanted silicon”, Kevin S. Jones, Heather Banisaukas, and Josh GlassbergThe effect of laser thermal processing (LTP) on implantation-induced defect evolution and transient enhanced diffusion (TED) of boron was investigated. A 270-Å-thick amorphous layer formed by 10 keV Si + implantation was melted and regrown using a 20 ns ultraviolet laser pulse.... (Read more)
- 835. Appl. Phys. Lett. 75, 364 (1999) , “Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses”, D. C. Schmidt and B. G. SvenssonPlatinum has been diffused into epitaxial n-type silicon at 700 °C from 10 to 50 min in steps of 10 min following implantation with 3.3 MeV alpha particles at a dose of 1 × 1013 cm 2. Thereafter, the samples were characterized using deep level transient... (Read more)
- 836. Appl. Phys. Lett. 75, 3467 (1999) , “Impurity gettering by high-energy ion implantation in silicon beyond the projected range”, Y. M. Gueorguiev, R. Kögler, A. Peeva, D. Panknin, A. Mücklich, R. A. Yankov, and W. SkorupaDeep gettering layers have been formed in Si wafers by MeV implantation of Si + and P + ions, followed by annealing. Samples have been subsequently contaminated with Cu. Secondary ion mass spectrometry analysis reveals for P implants gettering of Cu atoms in regions... (Read more)
- 837. Appl. Phys. Lett. 75, 3285 (1999) , “Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence”, S. A. Brown, R. J. Reeves, and C. S. HaaseGallium nitride has been reactive-ion etched with SF6 and argon plasmas. The Ar-etched samples show a striking transition from a dominant blue luminescence band to a dominant yellow luminescence band after less than 5 min of low power illumination. The observation of metastable defects... (Read more)
- 838. Appl. Phys. Lett. 75, 3273 (1999) , “Selective excitation and thermal quenching of the yellow luminescence of GaN”, J. S. Colton and P. Y. YuWe report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and... (Read more)
- 839. Appl. Phys. Lett. 75, 2857 (1999) , “Defect structure and electron field-emission properties of boron-doped diamond films”, Yung-Hsin Chen and Chen-Ti HuThe correlation between electron field-emission properties of diamond films prepared by the chemical vapor deposition (CVD) process and the defect structure induced by boron doping was examined. Secondary ion mass spectroscopic analysis indicates that the solubility limit of boron in diamond is... (Read more)
- 840. Appl. Phys. Lett. 75, 2569 (1999) , “Electrical effects of plasma damage in p-GaN”, X. A. Cao and S. J. PeartonThe reverse breakdown voltage of p-GaN Schottky diodes was used to measure the electrical effects of high density Ar or H2 plasma exposure. The near surface of the p-GaN became more compensated through introduction of shallow donor states whose concentration depended on ion... (Read more)
- 841. Appl. Phys. Lett. 75, 2441 (1999) , “The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals”, K. Saarinen, J. Nissilä, and P. HautojärviGallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The... (Read more)
- 842. Appl. Phys. Lett. 75, 241 (1999) , “The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K”, N. Yarykin, C. R. Cho, and G. A. RozgonyiPhotoexcitation of silicon during low-fluence implantation with MeV Si and Ge ions is observed to suppress vacancy-type point-defect formation, as determined by in situ deep-level transient spectroscopy. The A-center formation after low-temperature implantation is extended over a wide... (Read more)
- 843. Appl. Phys. Lett. 75, 229 (1999) , “Effect of arsenic doping on {311} defect dissolution in silicon”, Richard Brindos, Patrick Keys, and Kevin S. JonesSi + ions were implanted into silicon wafers with background concentrations of arsenic ranging from 1 × 1017 to 3 × 1019 cm 3 to study the interaction between arsenic atoms and excess self-interstitials. Samples were then annealed at... (Read more)
- 844. Appl. Phys. Lett. 75, 2041 (1999) , “Room-temperature photoluminescence excitation spectroscopy of Er3 + ions in Er- and (Er + Yb)-doped SiO2 films”, A. Kozanecki and H. PrzybylinskaWe apply photoluminescence excitation spectroscopy to study the efficiency of excitation at 960990 nm of the 1.54 µm emission of erbium implanted into SiO2 films thermally grown on silicon for a range of Er and Yb concentrations. We show that, in silica films doped... (Read more)
- 845. Appl. Phys. Lett. 75, 1899 (1999) , “Persistent photoconductivity in Ga1–xInxNyAs1–y”, J. Z. Li, J. Y. Lin, and H. X. JiangElectrical properties of unintentionally doped p-type Ga0.95In0.05N0.013As0.987 quaternary alloys grown by metalorganic vapor-phase epitaxy have been investigated by Hall-effect and photoconductivity measurements. Persistent photoconductivity... (Read more)
- 846. Appl. Phys. Lett. 75, 1571 (1999) , “Boron-related minority-carrier trapping centers in p-type silicon”, Daniel Macdonald, Mark Kerr, and Andrés CuevasPhotoconductivity-based measurements of recombination lifetimes in multicrystalline silicon are often hampered by carrier trapping effects, which cause a characteristically large relative increase in the photoconductance. Single-crystal p-type float-zone wafers of varying resistivities were... (Read more)
- 847. Appl. Phys. Lett. 75, 1503 (1999) , “Identification of the intrinsic self-trapped hole center in KD2PO4”, K. T. Stevens, N. Y. Garces, and L. E. HalliburtonThe intrinsic "self-trapped" hole center in KD2PO4 crystals has been identified using electron paramagnetic resonance and electron-nuclear double resonance. These defects, labeled [D2PO4]o centers, can be formed at 77 K by... (Read more)
- 848. Appl. Phys. Lett. 75, 1410 (1999) , “Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N + implantation”, W. Shan, K. M. Yu, W. Walukiewicz, and J. W. Ager IIIWe have studied the optical properties of nitrogen implanted GaAs and AlGaAs samples. The fundamental band-gap energy has been found to decrease with the increasing N + implantation dose in a manner similar to that commonly observed in GaNAs and GaInNAs alloys grown by molecular beam... (Read more)
- 849. Appl. Phys. Lett. 75, 1279 (1999) , “Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon”, R. Kögler, A. Peeva, W. Anwand, G. Brauer, and W. SkorupaDefects in high energy ion implanted silicon have been investigated, especially in the depth range around half of the projected ion range RP/2 after annealing at temperatures between 700 and 1000 °C. Preferable trapping of metals just in this depth range proves the... (Read more)
- 850. Appl. Phys. Lett. 75, 1219 (1999) , “Defects in thermal oxide studied by photoluminescence spectroscopy”, Hiroyuki NishikawaDefects in as-grown thermal oxide were investigated by photoluminescence (PL) spectroscopy using synchrotron radiation as a light source. A PL band at 3.3 eV was observed under excitation at 5 eV for dry thermal oxide at room temperature. The PL band was also observed for forming-gas annealed oxide,... (Read more)
- 851. Appl. Phys. Lett. 75, 115 (1999) , “Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon”, M. RamamoorthyWe report first-principles calculations in terms of which we propose a unified description of the atomic dynamics that underlie the nucleation and growth of SiO2 precipitates in Si and the oxidation of Si thin films. We identify a mechanism for the observed emission of Si interstitials... (Read more)
- 852. Appl. Phys. Lett. 75, 1131 (1999) , “Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra”, A. Sassella and A. BorghesiA suitable choice of one sample among several silicon wafers subjected to two-step thermal treatments for oxygen precipitation permits to reveal a complete series of infrared absorption peaks related to the precipitates formed in the crystal. Structured spectra are observed at 7 K and can be... (Read more)
- 853. Appl. Phys. Lett. 74, 979 (1999) , “Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation”, H. Wirth, D. Panknin, and W. SkorupaFlash-lamp annealing was used for activation and crystal recovery of highly aluminum-implanted 6H-SiC wafers. In comparison with conventional furnace annealing, the free hole concentration can be remarkably increased at high acceptor atom concentrations (=" align="bottom">5×1020... (Read more)
- 854. Appl. Phys. Lett. 74, 961 (1999) , “Enhancing defect-related photoluminescence by hot implantation into SiO2 layers”, S. Im, J. Y. Jeong, and M. S. OhVisible photoluminescence around an orange band of 580 nm wavelength are observed from 300 nm thin SiO2 layers implanted by Si or Ge ions at both substrate temperatures of 25 °C [room temperature (RT)] and 400 °C (hot). Si implantations at an energy of 30 keV were performed with... (Read more)
- 855. Appl. Phys. Lett. 74, 839 (1999) , “Observation of negative-U centers in 6H silicon carbide”, C. G. Hemmingsson, N. T. Son, and E. JanzénTwo negative-U centers in 6H SiC have been observed and characterized using capacitance transient techniques. These two defects give rise to one acceptor level (/0) and one donor level (+/0) each in the band gap. The donor and the acceptor level have inverted ordering, i.e., the thermal... (Read more)
- 856. Appl. Phys. Lett. 74, 809 (1999) , “Field-enhanced emission rate and electronic properties of a defect introduced in n-GaN by 5.4 MeV He-ion irradiation”, S. A. Goodman and F. D. AuretA deep level defect ER3, introduced in n-GaN by high energy (5.4 MeV) He ions, was characterized by deep level transient spectroscopy (DLTS). This defect, 0.196 ± 0.004 eV below the conduction band, with an apparent capture cross-section of 3.5 ± 1 × 1015... (Read more)
- 857. Appl. Phys. Lett. 74, 700 (1999) , “Effect of the end-of-range loop layer depth on the evolution of {311} defects”, R. Raman and M. E. LawThe interactions between end-of-range dislocation loops and {311} defects as a function of their proximity were studied. The dislocation loops were introduced at 2600 Å by a dual 1 × 1015 cm 2, 30 keV and a 1 × 1015 cm 2,... (Read more)
- 858. Appl. Phys. Lett. 74, 679 (1999) , “Control of diffusion of implanted boron in preamorphized Si: Elimination of interstitial defects at the amorphous-crystal interface”, E. G. Roth, O. W. Holland, and D. K. ThomasTransient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in... (Read more)
- 859. Appl. Phys. Lett. 74, 543 (1999) , “Optical characterization of the "E2" deep level in GaN”, P. Hacke, P. Ramvall, S. Tanaka, and Y. AoyagiThe correspondence between the E2 level (~ Ec 0.55 eV) in n-type GaN undergoing thermoionization and photoionization was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of... (Read more)
- 860. Appl. Phys. Lett. 74, 49 (1999) , “Self- and interdiffusion in AlXGa1 – XAs/GaAs isotope heterostructures”, H. Bracht and E. E. HallerWe report self- and interdiffusion studies between 800 and 1160 °C in buried Al71GaAs/Al69GaAs/71GaAs and AlAs/71GaAs isotope heterostructures. Ga diffusion at Al71GaAsAl69GaAs interfaces was found to decrease with... (Read more)
- 861. Appl. Phys. Lett. 74, 407 (1999) , “Proton bombardment-induced electron traps in epitaxially grown n-GaN”, F. D. Auret and S. A. GoodmanUsing deep-level transient spectroscopy, we have studied the electrical properties of defects introduced in epitaxially grown n-GaN during 2-MeV proton bombardment. The main defects detected, ER2 and ER3, are introduced at rates of 400 ± 150 and 600 ± 100 cm 1,... (Read more)
- 862. Appl. Phys. Lett. 74, 3993 (1999) , “InxGa1 – xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1 – xN”, Ch. Manz, M. Kunzer, H. Obloh, A. Ramakrishnan, and U. KaufmannThe deep, yellow photoluminescence band well known in GaN has been studied in InxGa1 xN (x0.14) grown pseudomorphically on GaN. The peak energy Ep of the band is found to shift gradually to the red with increasing x... (Read more)
- 863. Appl. Phys. Lett. 74, 3812 (1999) , “Spatial distribution of radiation-induced defects in p+-n InGaP solar cells”, M. J. Romero, D. Araújo, and R. GarcíaThe spatial distribution of radiation-induced, radiative recombination centers in single-junction p+-n InGaP solar cells irradiated by 1 MeV electrons or 3 MeV protons has been determined from cathodoluminescence (CL) spectra. The energy levels of the radiation-induced,... (Read more)
- 864. Appl. Phys. Lett. 74, 3797 (1999) , “Light-induced electron spin resonance in amorphous hydrogenated germanium”, F. C. Marques, M. M. de Lima, Jr., and P. C. TaylorWe report the observation of light-induced electron spin resonance (LESR) in amorphous hydrogenated germanium. Two new lines with zero crossings near g = 2.01 and g = 2.03 were detected and ascribed to electrons and holes in the conduction- and valence-band-tail states, respectively.... (Read more)
- 865. Appl. Phys. Lett. 74, 3755 (1999) , “Ab-initio calculation of excited state absorption of Cr4 + in Y3Al5O12”, W. Y. Ching and Yong-Nian XuThe Cr3 + and Cr4 + impurity states in Y3Al5O12 (YAG) crystal are studied by ab-initio supercell calculations using the density-functional theory. Calculations are carried out with Cr substitutions at the octahedral and tetrahedral Al... (Read more)
- 866. Appl. Phys. Lett. 74, 3657 (1999) , “B cluster formation and dissolution in Si: A scenario based on atomistic modeling”, Lourdes Pelaz, G. H. Gilmer, H.-J. Gossmann, and C. S. RaffertyA comprehensive model of the nucleation, growth, and dissolution of B clusters in Si is presented. We analyze the activation of B in implanted Si on the basis of detailed interactions between B and defects in Si. In the model, the nucleation of B clusters requires a high interstitial... (Read more)
- 867. Appl. Phys. Lett. 74, 3648 (1999) , “Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers”, Toshiaki Ono and George A. RozgonyiThe effect of dopant-type, antimony (Sb), arsenic (As), and boron (B), on the outdiffusion of oxygen in heavily doped Czochralski (Cz) silicon wafers has been investigated using secondary ion mass spectroscopy. The results indicate that, although oxygen diffusion in Cz silicon is retarded in heavily... (Read more)
- 868. Appl. Phys. Lett. 74, 3480 (1999) , “Infrared absorption of Li acceptors and shallow donors in ZnSe”, H. Nakata, K. Yamada, and T. OhyamaUsing Fourier transform infrared spectroscopy, we have observed the absorption spectra of holes bound to acceptors in bulk ZnSe below 100 K. The absorption is assigned to hole transition of Li acceptors from the 1S3/2 ground state to the 2P3/2 excited state. The... (Read more)
- 869. Appl. Phys. Lett. 74, 3329 (1999) , “The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses”, D. C. Schmidt and B. G. SvenssonPlatinum has been diffused into epitaxial n-type silicon at 600, 650, and 700 °C for 30 min following implantation with 3.3 MeV alpha particles. The doses employed were between 1 × 1011 and 1 × 1014 He + cm 2. Thereafter the... (Read more)
- 870. Appl. Phys. Lett. 74, 3311 (1999) , “High temperature proton implantation induced photosensitivity of Ge-doped SiO2 planar waveguides”, P. J. Hughes, A. P. Knights, and B. L. WeissThe possibility of using keV proton implantation at 800 °C to enhance the photosensitivity of Ge-doped silica has been investigated. Room temperature implantation induced defects indicated by absorption at ultraviolet (UV) (< 200 nm) and visible wavelengths (> 550 nm) were annealed during... (Read more)
- 871. Appl. Phys. Lett. 74, 2984 (1999) , “Atomic geometry and energetics of vacancies and antisites in cubic boron nitride”, W. Orellana and H. ChachamWe use first-principles calculations to investigate the atomic geometries and formation energies of vacancies (VN,VB) and antisites (BN,NB) in cubic boron nitride. We find that VN and VB are the most stable... (Read more)
- 872. Appl. Phys. Lett. 74, 284 (1999) , “Majority- and minority-carrier traps in Te-doped AlInP”, Y. R. Wu, W. J. Sung, and W. I. LeeThe properties of deep levels found in Te-doped AlInP grown by metalorganic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and... (Read more)
- 873. Appl. Phys. Lett. 74, 2830 (1999) , “Deep levels in p-type InGaAsN lattice matched to GaAs”, D. Kwon, R. J. Kaplar, and S. A. RingelDeep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metalorganic chemical vapor deposition-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels... (Read more)
- 874. Appl. Phys. Lett. 74, 278 (1999) , “Detection of copper contamination in silicon by surface photovoltage diffusion length measurements”, Worth B. Henley and Deepak A. RamappaSurface photovoltage minority carrier lifetime/diffusion length analysis of copper contaminated silicon was performed. It was observed that copper and copper associated defects degrade minority carrier lifetime more in n-type than in p-type silicon. This finding is explained by... (Read more)
- 875. Appl. Phys. Lett. 74, 2708 (1999) , “Shallow donors in Ge-rich GeSi bulk crystals”, M. Franz and K. PresselWe report on the change of shallow donor energy levels with alloy composition in Ge-rich Ge1 xSix bulk crystals. For phosphorus, we find a strong, linear increase of the ionization energy with increasing Si content for 0 < x < 0.1, whereas, for... (Read more)
- 876. Appl. Phys. Lett. 74, 2663 (1999) , “Lateral migration of point defects in Si induced by localized ion implantation”, T. Matsukawa, K. Yokoyama, and S. SawaraNovel experimental approach to investigate lateral migration of point defects in Si induced by ion implantation has been proposed. The point defects induced by localized irradiation using a focused Si ion beam with an energy of 60 keV were monitored by deep level transient spectroscopy while... (Read more)
- 877. Appl. Phys. Lett. 74, 2602 (1999) , “Epitaxial aluminum carbide formation in 6H–SiC by high-dose Al + implantation”, J. StoemenosAluminum carbide precipitates are formed after Al ion implantation with dose 3 × 1017 cm 2 at 500 °C into single crystalline 6HSiC. The aluminum carbide (Al4C3) precipitates are in epitaxial relation with 6HSiC matrix, having... (Read more)
- 878. Appl. Phys. Lett. 74, 2358 (1999) , “Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy”, B. J. Skromme and J. JayapalanLow-temperature (1.720 K) photoluminescence and reflectance are used to investigate the free and bound exciton and shallow impurity states in GaN. A 300-µm-thick GaN layer grown by hydride vapor phase epitaxy on sapphire(0001), with an exceptionally low dislocation density (3... (Read more)
- 879. Appl. Phys. Lett. 74, 2355 (1999) , “Lattice location of Ca in GaN using ion channeling”, H. Kobayashi and W. M. GibsonThe Ca dopant site in the GaN lattice has been investigated using ion channeling. Metal organic chemical vapor deposition grown GaN on c-plane sapphire substrates implanted with 40Ca at a dose of 1 × 1015 cm 2 with postimplant annealing were... (Read more)
- 880. Appl. Phys. Lett. 74, 2292 (1999) , “Suppressed diffusion of implanted boron in 4H–SiC”, Michael Laube and Gerhard PenslTransient-enhanced diffusion of boron (B) during anneals at 1700 °C is experimentally observed in B-implanted 4HSiC samples. This enhanced diffusion can strongly be suppressed by coimplantation of carbon or by a preanneal at 900 °C. It is proposed that B in 4HSiC diffuses via the... (Read more)
- 881. Appl. Phys. Lett. 74, 221 (1999) , “Silicon vacancy in SiC: A high-spin state defect”, L. Torpo and R. M. NieminenWe report results from spin-polarized ab initio local spin-density calculations for the silicon vacancy (VSi) in 3C and 2HSiC in all its possible charge states. The calculated electronic structure for SiC reveals the presence of a stable spin-aligned... (Read more)
- 882. Appl. Phys. Lett. 74, 2200 (1999) , “Evidence of N-related compensating donors in lightly doped ZnSe:N”, E. Tournié, P. Brunet, and J.-P. FaurieWe have used a nitrogen/argon mixed plasma to dope p-type ZnSe during molecular beam epitaxy. We show that this technique allows control of the net acceptor concentration in the whole range from 1015 to 1018 cm 3. The unique ability to fine tune the... (Read more)
- 883. Appl. Phys. Lett. 74, 2173 (1999) , “Sputter deposition-induced electron traps in epitaxially grown n-GaN”, F. D. Auret and S. A. GoodmanWe have used deep level transient spectroscopy to study the electrical properties of defects introduced in epitaxial n-GaN during sputter deposition of Au Schottky contacts. Four defects, located 0.22 ± 0.02, 0.30 ± 0.01, 0.40 ± 0.01, and 0.45 ± 0.10 eV below the... (Read more)
- 884. Appl. Phys. Lett. 74, 2038 (1999) , “Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron–interstitial cluster formation”, A. D. Lilak, S. K. Earles, M. E. Law, and K. S. JonesBoron-doped well structures formed in Czochralski silicon are subjected to a self-implant and various anneals to form a population of type {311} defects. Quantitative transmission electron microscopy is then used to measure the residual interstitials trapped in the {311} defects as a function of... (Read more)
- 885. Appl. Phys. Lett. 74, 2017 (1999) , “Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion”, Lourdes Pelaz, G. H. Gilmer, V. C. Venezia, and H.-J. GossmannAtomistic simulations are used to study the effects of implant parameters on transient enhanced diffusion (TED). We analyze 10 keV Si implants in a wide range of doses from 108 to 1014 ions/cm2, dose rates from 1010 to 1014 ions/cm2... (Read more)
- 886. Appl. Phys. Lett. 74, 1999 (1999) , “DX centers in GaAs/Si-δ/AlAs heterostructure”, R. H. Miwa and T. M. SchmidtMicroscopic mechanisms of impurity spreading in GaAs/Si-δ/AlAs heterostructure have been investigated using an ab initio pseudopotential total energy calculation. Our results showed that silicon atoms can move from the δ-doped plane occupying interstitial positions, favored by the... (Read more)
- 887. Appl. Phys. Lett. 74, 1875 (1999) , “Passivation of boron in diamond by deuterium”, R. Zeisel, C. E. Nebel, and M. StutzmannCapacitancevoltage measurements have been performed on deuterated boron-doped synthetic-type IIb diamond. They demonstrate the electrical passivation of the boron acceptors, which was manifested by a persistent decrease in capacitance after deuteration. The capacitancevoltage dependence... (Read more)
- 888. Appl. Phys. Lett. 74, 1675 (1999) , “Observation of change in shape of oxygen precipitates in high-temperature annealed silicon by transmission electron microscopy”, K. Sakai, T. Yamagami, and K. OjimaChanges in size and shape of oxygen precipitates in Czochralski silicon after high-temperature annealing in an Ar atmosphere were observed using a transmission electron microscopy. The oxide precipitates introduced by 750 °C after 4 h annealing in an Ar atmosphere had their corners rounded off... (Read more)
- 889. Appl. Phys. Lett. 74, 1439 (1999) , “Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs”, B. Grandidier, Huajie Chen, and R. M. FeenstraScanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs with and without Be doping. The Be-doped material is observed to contain significantly fewer AsGa antisite defects than the undoped material, with no evidence found for BeAs complexes. Annealing of the... (Read more)
- 890. Appl. Phys. Lett. 74, 1424 (1999) , “Interface and bulk defects in SiC/GaN heterostructures characterized using thermal admittance spectroscopy”, H. Witte, A. Krtschil, M. Lisker, and J. ChristenSiC/GaN p-n and n-n heterostructures grown by low pressure chemical vapor deposition were investigated using thermal admittance spectroscopy. Different kinds of defects were isolated and located. Evidence of a distribution of defects at the p-SiC/n-GaN... (Read more)
- 891. Appl. Phys. Lett. 74, 1403 (1999) , “Short-wavelength photoluminescence from silicon and nitrogen coimplanted SiO2 films”, J. Zhao, D. S. Mao, Z. X. Lin, X. Z. Ding, B. Y. Jiang, Y. H. Yu, and X. H. LiuIntense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films implanted with Si and N is reported. A flat Si profile was first created. N ions were subsequently implanted into the same depth region as the implanted Si ions. Two PL bands peaking at ~... (Read more)
- 892. Appl. Phys. Lett. 74, 1299 (1999) , “Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon”, V. C. VeneziaWe demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy... (Read more)
- 893. Appl. Phys. Lett. 74, 1263 (1999) , “Evolution of deep-level centers in p-type silicon following ion implantation at 85 K”, C. R. Cho, N. Yarykin, R. A. Brown, O. Kononchuk, and G. A. RozgonyiIn situ deep-level transient spectroscopy measurements have been carried out on p-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K.... (Read more)
- 894. Appl. Phys. Lett. 74, 1218 (1999) , “Electron paramagnetic resonance of a cation antisite defect in ZnGeP2”, S. D. Setzler, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to characterize a new donor center in ZnGeP2 crystals. An equally spaced triplet of lines with a 1:2:1 intensity ratio is observed at g = 2.0026 when a crystal is exposed to 633 nm light (below band gap) while at temperatures... (Read more)
- 895. Appl. Phys. Lett. 74, 1144 (1999) , “Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods”, H. L. Gomes and P. StallingaTransient capacitance methods were applied to the depletion region of an abrupt asymmetric n+ p junction of silicon and unintentionally doped poly[2-methoxy, 5 ethyl (2 hexyloxy) paraphenylenevinylene] (MEH-PPV). Studies in the temperature range... (Read more)
- 896. Appl. Phys. Lett. 74, 1141 (1999) , “Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si”, S. Fatima, J. Wong-Leung, J. Fitz Gerald, and C. JagadishEvolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5 ×... (Read more)
- 897. Appl. Phys. Lett. 74, 1009 (1999) , “Blockage of the annealing-induced Si/SiO2 degradation by helium”, V. V. Afanas'ev and A. StesmansElectrical degradation of Si/SiO2 structures caused by postoxidation annealing was comparatively studied in noble gas (He, Ne, Ar), vacuum, and N2 ambient. Helium is found to significantly retard the generation of defects responsible for the low-field conductivity of ultrathin... (Read more)
- 898. J. Appl. Phys. 86, 981 (1999) , “Effects of annealing on the electrical properties of Fe-doped InP”, Y. W. Zhao, S. Fung, and C. D. BelingFe-doped liquid encapsulated Czochralski InP has been annealed between 500 and 900 °C for different durations. The electrical property of annealed InP has been studied by temperature-dependent Hall measurement. Defects in annealed Fe-doped InP have been detected by room-temperature transient... (Read more)
- 899. J. Appl. Phys. 86, 951 (1999) , “Compensation defects in annealed undoped liquid encapsulated Czochralski InP”, S. Fung, Y. W. Zhao, X. L. Xu, and X. D. ChenAs-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction... (Read more)
- 900. J. Appl. Phys. 86, 764 (1999) , “Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs”, Jian LiuThe rapid annealing behavior of several kinds of defects in semi-insulating GaAs irradiated with various neutron fluences has been characterized using a photoluminescence technique. In this experiment, transmutation impurities form not only donors, but also acceptors, GeAs (the 1.4783 eV... (Read more)
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